CN102427666A - Manufacturing method of high frequency microwave circuit board base material - Google Patents

Manufacturing method of high frequency microwave circuit board base material Download PDF

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Publication number
CN102427666A
CN102427666A CN2011102862678A CN201110286267A CN102427666A CN 102427666 A CN102427666 A CN 102427666A CN 2011102862678 A CN2011102862678 A CN 2011102862678A CN 201110286267 A CN201110286267 A CN 201110286267A CN 102427666 A CN102427666 A CN 102427666A
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CN
China
Prior art keywords
copper foil
frequency microwave
dielectric layer
foil layer
board substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2011102862678A
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Chinese (zh)
Inventor
顾根山
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Individual
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Individual
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Publication date
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Priority to CN2011102862678A priority Critical patent/CN102427666A/en
Publication of CN102427666A publication Critical patent/CN102427666A/en
Pending legal-status Critical Current

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Abstract

The invention discloses a manufacturing method of high frequency microwave circuit board base material. The method comprises the following steps: (1) preparing a dielectric layer which is made through dipping synthetic mica glass cloth into polyfluortetraethylene; (2) laying a copper foil layer I and a copper foil layer II on two sides of the dielectric layer respectively in the context of high temperature and high pressure to prepare the high frequency microwave circuit board base material. According to the invention, a preparation method is simple, loss of medium can be reduced, a dielectric constant scope can be enlarged, simultaneously, surface resistance and volume resistance can be increased, aperture metallization difficulty is decreased, and usage performance of sheet material is enhanced.

Description

A kind of manufacture method of high-frequency microwave board substrate
Technical field
The present invention relates to a kind of manufacture method of high-frequency microwave board substrate.
Background technology
The dielectric constant range of the dielectric layer of copper foil clad plate of polytetrafluoroethylglass glass cloth is little at present; Sheet resistance, volume resistance value are little; Use is prone to grounding phenomenon, and hole empty metallization difficulty is big, greatly reduces the serviceability of sheet material; A kind of microfibre of external employing strengthens, but its price is high.
Summary of the invention
The invention provides a kind of manufacture method of high-frequency microwave board substrate, its preparation method is not only simple, and can reduce the loss of medium; Enlarge dielectric constant range; Simultaneously can increase sheet resistance and volume resistance, the hole metallization difficulty reduces, thereby strengthens the serviceability of sheet material.
The present invention has adopted following technical scheme: a kind of manufacture method of high-frequency microwave board substrate, and it may further comprise the steps: step 1, at first make dielectric layer, dielectric layer is that mica synthetic glass cloth is immersed in system in the polytetrafluoroethylene dipping through dielectric layer; Step 2 is covered with the high-frequency microwave board substrate of copper foil layer I and copper foil layer II system then respectively under the condition of the two sides of dielectric layer at HTHP.
The copper foil layer I is covered with one deck at least in the step 2 of the present invention.The copper foil layer II is covered with one deck at least in the step 2 of the present invention.The mass ratio 2:8 of copper foil layer I and copper foil layer II and dielectric layer in the step 2 of the present invention.With the amalgam of glass bonded mica cloth dipping polytetrafluoroethyldispersion dispersion or polytetrafluoroethyldispersion dispersion and ceramic powder,, process dielectric layer in the step 1 of the present invention through dipping oven dry for several times.
The present invention has following beneficial effect: the present invention not only manufacture method is simple, reliable; And employing dielectric layer, copper foil layer I and copper foil layer II; Dielectric layer is the mica synthetic glass cloth that is coated with polytetrafluoroethylene dipping, and described copper foil layer I and copper foil layer II be one deck at least, and copper foil layer I and copper foil layer II and dielectric layer are than the such loss that not only can reduce medium of 2:8; Enlarge dielectric constant range; Dielectric constant range is: 2.2,2.7,3.0,3.5,4.0, and increase sheet resistance, volume resistance, hole metallization difficulty and reduce, strengthen the serviceability of sheet material.
Embodiment
The invention provides a kind of manufacture method of high-frequency microwave board substrate; It may further comprise the steps: step 1; At first make dielectric layer, dielectric layer is that mica synthetic glass cloth is immersed in system in the polytetrafluoroethylene dipping through dielectric layer, in the preparation process with the amalgam of glass bonded mica cloth dipping polytetrafluoroethyldispersion dispersion or polytetrafluoroethyldispersion dispersion and ceramic powder; Through dipping oven dry for several times, process dielectric layer; Step 2; Under the condition of the two sides of dielectric layer, be covered with the high-frequency microwave board substrate of copper foil layer I and copper foil layer II system then respectively at HTHP; The copper foil layer I is covered with one deck at least, and present embodiment is one deck, and the copper foil layer II is covered with one deck at least in the step 2; Present embodiment is one deck, the mass ratio 2:8 of copper foil layer I and copper foil layer II and dielectric layer.

Claims (5)

1. the manufacture method of a high-frequency microwave board substrate, it may further comprise the steps:
Step 1 is at first made dielectric layer, and dielectric layer is that mica synthetic glass cloth is immersed in system in the polytetrafluoroethylene dipping through dielectric layer;
Step 2 is covered with the high-frequency microwave board substrate of copper foil layer I and copper foil layer II system then respectively under the condition of the two sides of dielectric layer at HTHP.
2. the manufacture method of high-frequency microwave board substrate according to claim 1 is characterized in that the copper foil layer I is covered with one deck at least in the step 2.
3. the manufacture method of high-frequency microwave board substrate according to claim 1 is characterized in that the copper foil layer II is covered with one deck at least in the step 2.
4. the manufacture method of high-frequency microwave board substrate according to claim 1 is characterized in that the mass ratio 2:8 of copper foil layer I and copper foil layer II and dielectric layer in the step 2.
5. the manufacture method of high-frequency microwave board substrate according to claim 1; It is characterized in that in the step 1 amalgam with glass bonded mica cloth dipping polytetrafluoroethyldispersion dispersion or polytetrafluoroethyldispersion dispersion and ceramic powder; Through dipping oven dry for several times, process dielectric layer.
CN2011102862678A 2011-09-25 2011-09-25 Manufacturing method of high frequency microwave circuit board base material Pending CN102427666A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2011102862678A CN102427666A (en) 2011-09-25 2011-09-25 Manufacturing method of high frequency microwave circuit board base material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2011102862678A CN102427666A (en) 2011-09-25 2011-09-25 Manufacturing method of high frequency microwave circuit board base material

Publications (1)

Publication Number Publication Date
CN102427666A true CN102427666A (en) 2012-04-25

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN2011102862678A Pending CN102427666A (en) 2011-09-25 2011-09-25 Manufacturing method of high frequency microwave circuit board base material

Country Status (1)

Country Link
CN (1) CN102427666A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109413857A (en) * 2018-11-09 2019-03-01 博罗康佳精密科技有限公司 A kind of manufacture craft of high-frequency high-speed plate
CN109677060A (en) * 2017-10-18 2019-04-26 泰州市旺灵绝缘材料厂 A kind of wide-dielectric constant insulating medium layer copper coated foil plate and preparation method thereof
CN109677061A (en) * 2017-10-18 2019-04-26 泰州市旺灵绝缘材料厂 A kind of wide-dielectric constant insulating medium layer copper coated foil plate and preparation method thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1339270A2 (en) * 2002-02-25 2003-08-27 SMART Electronics, Inc. Method of manufacturing metal clad laminate for printed circuit board
CN101295556A (en) * 2008-06-13 2008-10-29 顾根山 Copper foil clad plate of polytetrafluoroethylene glass cloth with wide dielectric constant
CN101934615A (en) * 2010-07-21 2011-01-05 顾根山 High-frequency microwave multilayer board bonding sheet and manufacturing method thereof
CN101934610A (en) * 2010-07-21 2011-01-05 顾根山 Wide-dielectric-coefficient Ccopper foil plate covered with wide-dielectric-coefficient polyfluortetraethylene glass cloth and preparation method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1339270A2 (en) * 2002-02-25 2003-08-27 SMART Electronics, Inc. Method of manufacturing metal clad laminate for printed circuit board
CN101295556A (en) * 2008-06-13 2008-10-29 顾根山 Copper foil clad plate of polytetrafluoroethylene glass cloth with wide dielectric constant
CN101934615A (en) * 2010-07-21 2011-01-05 顾根山 High-frequency microwave multilayer board bonding sheet and manufacturing method thereof
CN101934610A (en) * 2010-07-21 2011-01-05 顾根山 Wide-dielectric-coefficient Ccopper foil plate covered with wide-dielectric-coefficient polyfluortetraethylene glass cloth and preparation method thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109677060A (en) * 2017-10-18 2019-04-26 泰州市旺灵绝缘材料厂 A kind of wide-dielectric constant insulating medium layer copper coated foil plate and preparation method thereof
CN109677061A (en) * 2017-10-18 2019-04-26 泰州市旺灵绝缘材料厂 A kind of wide-dielectric constant insulating medium layer copper coated foil plate and preparation method thereof
CN109413857A (en) * 2018-11-09 2019-03-01 博罗康佳精密科技有限公司 A kind of manufacture craft of high-frequency high-speed plate

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Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
EE01 Entry into force of recordation of patent licensing contract

Assignee: Wangling Insulating Material Plant, Taizhou

Assignor: Gu Genshan

Contract record no.: 2012320000793

Denomination of invention: Manufacturing method of high frequency microwave circuit board base material

License type: Exclusive License

Open date: 20120425

Record date: 20120615

RJ01 Rejection of invention patent application after publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20120425