CN102424386A - Efficient energy-saving type polysilicon reduction furnace - Google Patents
Efficient energy-saving type polysilicon reduction furnace Download PDFInfo
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- CN102424386A CN102424386A CN2011102622937A CN201110262293A CN102424386A CN 102424386 A CN102424386 A CN 102424386A CN 2011102622937 A CN2011102622937 A CN 2011102622937A CN 201110262293 A CN201110262293 A CN 201110262293A CN 102424386 A CN102424386 A CN 102424386A
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Abstract
The invention relates to an efficient energy-saving type polysilicon reduction furnace, which comprises a support seat (1), a water jacketed double-pipe plate (7) and a furnace body, wherein the furnace body consists of a furnace tube inner wall (14) and a furnace tube outer wall (16). The efficient energy-saving type polysilicon reduction furnace is characterized in that a heat reflection coating (17) is arranged on the furnace tube inner wall (14), a spiral support plate (19) is arranged between the furnace tube inner wall (14) and the furnace tube outer wall (16), the lower part of the furnace tube outer wall (16) is provided with a cooling water inlet (22), cooling water is discharged out of the furnace body between the furnace tube inner wall (14) and the furnace tube outer wall (16) along a water vapor outlet (18) which spirally ascends to the top of the furnace body, several circles of electrode sleeves (12) are arranged in the water jacketed double-pipe plate (7), an electrode (5) is penetrated in the electrode sleeves (12), an inner cavity of the water jacketed double-pipe plate (7) is communicated with a water inlet and distributing pipe (3), multiple circles of raw material gas spray nozzles (21) are arranged on the surface of the water jacketed double-pipe plate (7), and a tail gas exhaust pipe (26) and a cooling water discharge pipe (25) communicated with the inner cavity of the furnace body are connected with the center of the water jacketed double-pipe plate (7). The efficient energy-saving type polysilicon reduction furnace has the advantages that the temperature uniformity in the furnace is good, and the energy saving effect is obvious.
Description
Technical field
The present invention relates to a kind of sun power novel material silicon rod producing apparatus, especially a kind of polycrystalline silicon reducing furnace, specifically a kind of big specification high-efficiency and energy-saving type polycrystalline silicon reducing furnace.
Background technology
At present, under the severe situation that world's crude oil price remains high, save energy, raising energy utilization efficiency cause the countries in the world great attention.In addition, because main at present oil, the coal etc. of relying on of the necessary for human energy, thermoelectric and industrial production is discharged a large amount of CO
2, global warming is obvious.The energy dilemma and the deterioration of the ecological environment become the bottleneck of Development of Human Civilization.Fast-developing economy and the living standards of the people of China improve constantly, and energy demand increases considerably, carbon emission amount and day sharp increase.New forms of energy such as sun power, wind energy, water ability, nuclear energy receive various countries day by day and pay close attention to, and development rapidly.Polysilicon is an important materials of utilizing the photovoltaic cell of solar electrical energy generation, and market demand is huge.The polysilicon industry development was swift and violent in particularly Chinese nearest 5 years, and solar-grade polysilicon output is in the Asia first.But the unit consumption of energy M.L. still has big gap with external advanced level.Cut down the consumption of energy with cost be an urgent demand of production of polysilicon merchant to the key equipment polycrystalline silicon reducing furnace.
Solar energy level silicon (SOG) and electronic-grade silicon (EOG) purity requirement are very high; Want the applied chemistry method to convert metallurgical grade silicon (industrial silicon) to silane; Mainly be trichlorosilane (SiHCl3) and single silane (SiH4)); Through rectifying silane is purified, and then be converted into ultrapure polysilicon to the method for highly purified silane gas through chemical vapor deposition (CVD).The hydrogen reduction reaction device of manufacturing at present the SiHCl3 of polysilicon in the world is bell jar type siemens reactor mostly, also is known as siemens's reduction furnace.
Nineteen fifty-five; Siemens Company has successfully developed the Technology of in belljar, utilizing hydrogen reducing trichlorosilane (SiHCl3) vapor deposited silicon on thin silicon core heater; And begun plant-scale production in nineteen fifty-seven, Here it is usually said Siemens Method.On the basis of Siemens Method technology; Through increasing reduction tail gas dry process recovery system, SiCl4 hydrogenation process; Convert SiHCl3 reduction reaction by product SiCl4 to SiHCl3 and recycle, realized closed cycle, so formed the improvement Siemens Method---closed loop SiHCl3 hydrogen reduction method.The improvement Siemens Method comprises that five key link: SiHCl3 are synthetic, SiHCl3 rectification and purification, the hydrogen reduction of SiHCl3, the recovery of tail gas and the hydrogenation of SiCl4 separate.This method has reduced the energy consumption of unit product through adopting large-scale reduction furnace.Through adopting SiCl4 hydrogenation and tail gas dry process to reclaim technology, obviously reduced the consumption of raw and auxiliary material.
Polycrystalline silicon reducing furnace is the key equipment in the production of polysilicon, and the design of reduction furnace and operation directly affect energy consumption and cost.Polycrystalline silicon reducing furnace mainly contains two kinds on quartz bell cover type and metal bell jar type.The inwall of quartz bell cover type reactor drum is a quartz bell cover, before reduction reaction, sees through quartz cover with ir lamp and heats thin silicon rod to silicon rod conduction heating start-up temperature.Because quartzy voltage endurance capability is poor, generally under normal pressure, reacts.Metal bell jar type allows pressurized operation, increases sedimentation rate.At present domestic is main with metal bell jar type gas-phase deposition reactor basically.
After the conductive silicon core is preheating to about 1100 ℃ of temperature; Highly purified trichlorosilane is with after hydrogen mixes by a certain percentage; Under certain temperature and pressure, feed in the polycrystalline silicon reducing furnace, at diameter 5～10mm, be about that beginning reduction reaction deposition generates polysilicon on 2 meters the conductive silicon core.The residence time of virgin gas in reactor drum is generally 5-20s; Trichlorosilane begins to decompose in the time of 575 ℃; Reduction reaction temperature is controlled at about 1100 ℃, generates the rod-like polycrystal silicon of diameter 150～200mm about 150 hours, generates by products such as silicon tetrachloride, hydrogenchloride simultaneously.After reaction stopped, inert gas purge was opened bell jar after the cooling, unload silicon rod.The off-set facility of reduction furnace comprises cooling system and silicon rod disassembling system.
In the time of 1100 ℃, silicon rod surface principal reaction does
SiHCl3↑＋H2↑＝Si＋3HCl↑(1)
Because also there are other reactions simultaneously in non-uniform temperature in the reduction furnace, silicon tetrachloride is main by product:
SiHCl3↑＋HCl↑＝SiCl4＋H2↑(2)
The thermolysis of trichlorosilane and the secondary reduction reaction of silicon tetrachloride can take place simultaneously.
The trichlorosilane reduction reaction is thermo-negative reaction, and reaction mainly occurs in pyritous silicon rod surface, so will keep 1100 ℃ on silicon rod surface, hydrochloric acid will corrode silicon when surpassing 1200 ℃, and output is reduced.The fusing point of silicon is 1410 ℃, and this is the inner ultimate temperature of silicon rod, otherwise silicon rod can be toppled over.The metal wall of reduction furnace needs suitably cooling, and temperature will remain in 500 ℃, prevents that silicon from depositing at the metal wall.At the metal wall deposition takes place and can reduce output, also can increase radiogenic heat and absorb and cause high energy consumption, and silicon can react with metal, the chip that falls down from the metallic surface can pollute silicon rod.
Can know in the reduction furnace process of growth that by polysilicon energy consumption mainly occurs in the radiation loss of high temperature silicon rod to low temperature oven wall and chassis.The industrial scale that improves single stove can obviously reduce unit consumption of energy with the minimizing radiation loss.24 pairs of excellent reduction furnaces can reduce by 20% than 12 pairs of excellent reduction furnace energy consumptions.The GT Solar of the nearest U.S., Inc. uses coating technology to improve the wall reflection potential in reduction furnace, reduces the silicon rod radiation heat loss, makes more uniform temperature in the stove, and per kilogram polysilicon power consumption reaches 50 degree.Domestic most advanced unit consumption of energy level is 60 degree electricity at present, and average unit consumption of energy level is 90 degree electricity, and energy-saving potential is very big.So exploitation large-scale energy-saving reduction furnace is the trend of production of polysilicon.
Summary of the invention
The objective of the invention is the problem that single furnace output is little, energy consumption is high, design a kind of big specification high-efficiency and energy-saving type polycrystalline silicon reducing furnace to present polycrystalline silicon reducing furnace existence.
Technical scheme of the present invention is:
A kind of high-efficiency and energy-saving type polycrystalline silicon reducing furnace; It comprises bearing 1, band water jacket double-tube sheet 7 and the body of heater of being made up of stove tube inwall 14 and furnace tube outer wall 16; It is characterized in that described stove tube inwall 14 is provided with nano level heat-reflective coating 17; Between stove tube inwall 14 and furnace tube outer wall 16, spiral branches fagging 19 is installed, furnace tube outer wall 16 bottoms are provided with entrance of cooling water 22, and water coolant is rising to outside the steam outlet 18 discharge bodies of heater at body of heater top along spiral between stove tube inwall 14 and the furnace tube outer wall 16; Be provided with many circle electrode sleeves 12 in the described band water jacket double-tube sheet 7; Electrode 5 is installed in the electrode sleeve 12; The upper end of electrode 5 is stretched into and is used for plug-in mounting silicon plug 15 in the body of heater; The lower end of electrode 5 is equipped with watercooling jacket, and the water-in 4 of watercooling jacket links to each other with cooling water source through pipeline, and the water outlet 6 of watercooling jacket links to each other with water port through pipeline; The inner chamber of described band water jacket double-tube sheet 7 is connected with water inlet and distribution piping 3; Be provided with many circle virgin gas nozzles 21 on the surface of described band water jacket double-tube sheet 7; Air inlet endless tube and distribution piping 2 are installed below double-tube sheet 7; Virgin gas nozzle 21 is installed in the upper end of the distribution piping in air inlet endless tube and the distribution piping 2, and the upper end of this distribution piping is passed band water jacket double-tube sheet 7 inner water routes and communicated with the body of heater inner chamber; Center at band water jacket double-tube sheet 7 is connected with the exhaust pipe 26 that communicates with the body of heater inner chamber; Exhaust pipe 26 is sleeved in the water coolant water shoot 25, and the feed-water end of water coolant water shoot 25 communicates so that the water coolant in the inner chamber is discharged with band water jacket double-tube sheet 7 inner chambers.
Described body of heater is provided with cooling water jecket along inwall or outer wall; 19 cooling water jeckets that the spiral branches fagging is promptly arranged between stove tube inwall 14 and furnace tube outer wall 16; The stove drum flange has internal cooling water jacket 23; The radial baffle 28 and the circumferential cooling water jecket of the formation of traverse baffle 27 are arranged between the double-tube sheet 7, and the overheated of chuck and tube sheet and tube sheet top electrode seat avoided in these measures, and avoided the impact of steam mobile and vibrate, rock.
Described stove tube inwall 14 is provided with nano level heat-reflective coating 17; Nano level heat-reflective coating 17 thickness are 50-200 μ m; And the coatingsurface roughness is less than 0.2 μ m; Material is Cr and alloy, Ni and alloy thereof, Ti and alloy thereof, Ag and alloy thereof, Au and alloy thereof or nitroalloy, has increased anti-ly to wash away and improve heat reflection.
The tube sheet top of described band water jacket double-tube sheet 7 is connected with vapor pipe 24, has avoided cavitation erosion and overheated.
The inwall of described band water jacket double-tube sheet 7 is provided with nano level enhanced heat transfer component 9, has avoided cavitation erosion and overheated.
Radiator element, convex-concave structure, rhombus or groove, fin, ring groove or the radial slot of described tube sheet nano level enhanced heat transfer component 9 on band water jacket double-tube sheet 7 upper tubesheet inwalls, forming; The wing solid matter is hanged down in being arranged as of nano level enhanced heat transfer component 9, and promptly wing higher primary school is in 1mm, and width is less than 1mm.
Be provided with radial baffle 28 and the circumferential traverse baffle 27 that links to each other with radial baffle 28 in the described band water jacket double-tube sheet 7.
The quantity of described radial baffle 28 is at least 4, and each and radial baffle 28 are connected with two circumferential traverse baffles 27 at least, and radial baffle 28 has the arc-shaped transition section with circumferential traverse baffle 27.
Described body of heater is provided with a plurality of observation visors 11 and thermometer hole 20 along outer wall, observes visor 11 and is provided with water coolant and expansion joint 13 with thermometer hole 20.
Beneficial effect of the present invention:
1, reduction furnace inwall of the present invention is through special processing, and the stove inside coating strengthens reflection to be handled, and reduces coefficient of blackness, long service life.The reduction furnace inwall is carried out special processing, form highly reflective coatint, reduce the radiations heat energy loss at stainless steel surface.Be to establish plating on the stove tube inwall, be coated with the nano level heat-reflective coating; Nano level heat-reflective coating thickness is 50-200um; And the coatingsurface roughness is less than 0.2um, and material is Cr and alloy, Ni and alloy thereof, Ti and alloy thereof, Ag and alloy thereof, Au and alloy, nitroalloy etc.If inside coating emittance 0.01～0.03,1100 ℃ of silicon rod temperature, more energy-conservation 30% than traditional uncoated stainless steel inwall, per kilogram polysilicon power consumption is lower than 45 degree.
2, the present invention passes through along the whole surface of body of heater; Inwall or outer wall are provided with cooling water jecket; The cooling water jecket of spiral branches fagging is promptly arranged between stove tube inwall and furnace tube outer wall, and the stove drum flange has the internal cooling water jacket, and the cooling water jecket of radial baffle and circumferential traverse baffle is arranged between the double-tube sheet.Its effect is to reduce stove tube metallic walls surface temperature, reduces the raw material reaction fouling, improves silicon rod productivity, and increases the service life.
3, chassis of the present invention area is bigger; Can effectively prevent thermal stress deformation; On chassis and water coolant contact surface, process intensifying heat transfer bodies such as rhombus or groove, fin, ring groove, radial slot, the wing solid matter is hanged down in being arranged as of intensifying heat transfer body, and promptly wing higher primary school is in 1mm; Width does not influence the structure and the intensity on chassis less than 1mm.Simultaneously more evenly fast, avoided the overheated of electrode and chassis and caused accident through the feasible heat radiation of the effect of traverse baffle.
4, electrode reasonable Arrangement is evenly arranged.The number of electrodes that is each electric control district equates, and controllable adjustment.Sealing is arranged, open connection or the like assembly soon, convenient disassembly is efficient, can stop fluid to be revealed toward housing outward.
5, good energy-conserving effect, more energy-conservation more than 30% than traditional uncoated stainless steel inwall, per kilogram polysilicon power consumption is lower than 45 degree.
Description of drawings
Fig. 1 is a structural representation of the present invention.
Fig. 2 is the A-A sectional structure synoptic diagram of Fig. 1.
Fig. 3 is the B-B sectional structure synoptic diagram of Fig. 1.
Among the figure: 1 is bearing, and 2 are air inlet endless tube and distribution piping, and 3 are water inlet and distribution piping, and 4 for being the electrode entrance of cooling water, and 5 is electrode; 6 is cooling water outlet, and 7 are band water jacket double-tube sheet, and 8 is gasket, and 9 is the tube sheet enhanced heat transfer component, and 10 is firm web member; 11 is visor, and 12 is electrode sleeve, and 13 is expansion joint, and 14 is stove tube inwall, and 15 is silicon rod; 16 is furnace tube outer wall, and 17 is coating, and 18 are the steam outlet, and 19 is the spiral branches fagging, and 20 is thermometer hole; 21 is the virgin gas nozzle, and 22 is entrance of cooling water, and 23 is cooling water jecket, and 24 is the steam venting port, and 25 is cooling water outlet pipe; 26 is exhaust pipe, and 27 is circumferential traverse baffle, and 28 is radial baffle, and 33 is pipe connecting flange.
Embodiment
Below in conjunction with accompanying drawing and embodiment the present invention is further described.
Shown in Fig. 1-3.
A kind of large-scale high-efficiency and energy-saving type polycrystalline silicon reducing furnace; It comprises bearing 1, band water jacket double-tube sheet 7 and the body of heater of being made up of stove tube inwall 14 and furnace tube outer wall 16; The diameter of body of heater is at least 3 meters; As shown in Figure 1, described stove tube inwall 14 is provided with heat-reflective coating 17, between stove tube inwall 14 and furnace tube outer wall 16, spiral branches fagging 19 is installed; Furnace tube outer wall 16 bottoms are provided with entrance of cooling water 22, and water coolant is rising to outside the steam outlet 18 discharge bodies of heater at body of heater top along spiral between stove tube inwall 14 and the furnace tube outer wall 16; Be provided with many circle electrode sleeves 12 in the described band water jacket double-tube sheet 7, as shown in Figure 2, have four circles; Be arranged with 8,16,32,64 electrode sleeves 12 respectively; Electrode 5 is installed in the electrode sleeve 12, and the upper end of electrode 5 is stretched into and is used for plug-in mounting silicon plug 15 in the body of heater, and the lower end of electrode 5 is equipped with watercooling jacket; The water-in 4 of watercooling jacket links to each other with cooling water source through pipeline, and the water outlet 6 of watercooling jacket links to each other with water port through pipeline; The inner chamber of described band water jacket double-tube sheet 7 is connected with water inlet and distribution piping 3; Be provided with many circle virgin gas nozzles 21 (24 nozzles of totally three circles) on the surface of described band water jacket double-tube sheet 7; Air inlet endless tube and distribution piping 2 are installed on bearing 1; Virgin gas nozzle 21 is installed in the upper end of the distribution piping in air inlet endless tube and the distribution piping 2, and the upper end of this distribution piping is passed band water jacket double-tube sheet 7 inner water routes and communicated with the body of heater inner chamber; Center at band water jacket double-tube sheet 7 is connected with the exhaust pipe 26 that communicates with the body of heater inner chamber; Exhaust pipe 26 is sleeved in the water coolant water shoot 25, and the feed-water end of water coolant water shoot 25 communicates so that the water coolant in the inner chamber is discharged with band water jacket double-tube sheet 7 inner chambers.Band water jacket double-tube sheet 7 also is connected with steam vapor pipe 24.The inwall of described band water jacket double-tube sheet 7 is provided with tube sheet enhanced heat transfer component 9.Described tube sheet enhanced heat transfer component 9 is protruding radiator element, convex-concave structure, rhombus or groove, fin, ring groove or radial slot at band water jacket double-tube sheet 7 inwalls.Be provided with radial baffle 28 and the circumferential traverse baffle 27 that links to each other with radial baffle 28 in the described band water jacket double-tube sheet 7; As shown in Figure 3; The quantity of described radial baffle 28 is at least 4, and each and radial baffle 28 are connected with two circumferential traverse baffles 27 at least.
The metal bell jar type polycrystalline silicon reducing furnace of the embodiment of the invention mainly (promptly is with water jacket double-tube sheet 7 by the chassis; The bell-jar double-layer furnace body, electrode 5, visor hole, mixed air inlet pipe, mixed air tail gas escape pipe, body of heater cooling water inlet pipe, body of heater cooling water outlet pipe, chassis cooling water inlet pipe, chassis cooling water outlet pipe, electrode cooling water inlet pipe, electrode cooling water outlet pipe and other appurtenances that contain the chuck water coolant down together), are formed; Every counter electrode divides positive and negative electrode to be arranged on the chassis uniformly; The mixed air inlet pipe is divided into several spouts and is arranged on uniformly on the chassis, and the gas mixture air outlet is located at the center chassis position.
After the conductive silicon core is preheating to about 1100 ℃ of temperature; Highly purified trichlorosilane is with after hydrogen mixes by a certain percentage; Under certain temperature and pressure, feed in the polycrystalline silicon reducing furnace, at diameter 5～10mm, be about that beginning reduction reaction deposition generates polysilicon on 2 meters the conductive silicon core.The residence time of virgin gas in reactor drum is generally 5-20s; Trichlorosilane begins to decompose in the time of 575 ℃; Reduction reaction temperature is controlled at about 1100 ℃, generates the rod-like polycrystal silicon of diameter 120～160mm about 100 hours, generates by products such as silicon tetrachloride, hydrogenchloride simultaneously.After reaction stopped, inert gas purge was opened bell jar after the cooling, unload silicon rod.The off-set facility of reduction furnace comprises cooling system and silicon rod disassembling system.Can know in the reduction furnace process of growth that by polysilicon energy consumption mainly occurs in the radiation loss of high temperature silicon rod to low temperature oven wall and chassis.The industrial scale that improves single stove can obviously reduce unit consumption of energy with the minimizing radiation loss.In reduction furnace, use coating technology to improve the wall reflection potential, reduce the silicon rod radiation heat loss, make more uniform temperature in the stove.If coating inwall emittance 0.01～0.03,1100 ℃ of silicon rod temperature, than traditional energy-conservation 20-30% of uncoated stainless steel inwall, per kilogram polysilicon power consumption is lower than 45 degree.
The present invention does not relate to all identical with the prior art prior art that maybe can adopt of part and realizes.
Claims (9)
1. high-efficiency and energy-saving type polycrystalline silicon reducing furnace; It comprises bearing (1), band water jacket double-tube sheet (7) and the body of heater of being made up of stove tube inwall (14) and furnace tube outer wall (16); It is characterized in that described stove tube inwall (14) is provided with nano level heat-reflective coating (17); Between stove tube inwall (14) and furnace tube outer wall (16), spiral branches fagging (19) is installed; Furnace tube outer wall (16) bottom is provided with entrance of cooling water (22), and water coolant is rising to outside steam outlet (18) the discharge body of heater at body of heater top along spiral between stove tube inwall (14) and the furnace tube outer wall (16); Be provided with many circle electrode sleeves (12) in the described band water jacket double-tube sheet (7); Electrode (5) is installed in the electrode sleeve (12); The upper end of electrode (5) is stretched into and is used for plug-in mounting silicon plug (15) in the body of heater; The lower end of electrode (5) is equipped with watercooling jacket, and the water-in of watercooling jacket (4) links to each other with cooling water source through pipeline, and the water outlet of watercooling jacket (6) links to each other with water port through pipeline; The inner chamber of described band water jacket double-tube sheet (7) is connected with water inlet and distribution piping (3); Be provided with many circle virgin gas nozzles (21) on the surface of described band water jacket double-tube sheet (7); In double-tube sheet (7) below air inlet endless tube and distribution piping (2) are installed; Virgin gas nozzle (21) is installed in the upper end of the distribution piping in air inlet endless tube and the distribution piping (2), and the upper end of this distribution piping is passed the inner water route of band water jacket double-tube sheet (7) and communicated with the body of heater inner chamber; Center at band water jacket double-tube sheet (7) is connected with the exhaust pipe (26) that communicates with the body of heater inner chamber; Exhaust pipe (26) is sleeved in the water coolant water shoot (25), and the feed-water end of water coolant water shoot (25) communicates so that the water coolant in the inner chamber is discharged with band water jacket double-tube sheet (7) inner chamber.
2. high-efficiency and energy-saving type polycrystalline silicon reducing furnace according to claim 1; It is characterized in that described body of heater is provided with cooling water jecket along inwall or outer wall; (19) cooling water jecket that the spiral branches fagging is promptly arranged between stove tube inwall (14) and furnace tube outer wall (16); The stove drum flange has internal cooling water jacket (23), and the cooling water jecket of the formation of radial baffle (28) and circumferential traverse baffle (27) is arranged between the double-tube sheet (7).
3. high-efficiency and energy-saving type polycrystalline silicon reducing furnace according to claim 1; It is characterized in that described stove tube inwall (14) is provided with nano level heat-reflective coating (17); Nano level heat-reflective coating (17) thickness is 50-200 μ m; And the coatingsurface roughness is less than 0.2 μ m, and material is Cr and alloy, Ni and alloy thereof, Ti and alloy thereof, Ag and alloy thereof, Au and alloy thereof or nitroalloy.
4. high-efficiency and energy-saving type polycrystalline silicon reducing furnace according to claim 1 is characterized in that the tube sheet top of described band water jacket double-tube sheet (7) is connected with vapor pipe (24).
5. high-efficiency and energy-saving type polycrystalline silicon reducing furnace according to claim 1 is characterized in that the inwall of described band water jacket double-tube sheet (7) is provided with nano level enhanced heat transfer component (9).
6. high-efficiency and energy-saving type polycrystalline silicon reducing furnace according to claim 5 is characterized in that radiator element, convex-concave structure, rhombus or groove, fin, ring groove or the radial slot of described tube sheet nano level enhanced heat transfer component (9) on band water jacket double-tube sheet (7) upper tubesheet inwall, forming; The wing solid matter is hanged down in being arranged as of nano level enhanced heat transfer component (9), and promptly wing higher primary school is in 1mm, and width is less than 1mm.
7. high-efficiency and energy-saving type polycrystalline silicon reducing furnace according to claim 1 is characterized in that being provided with in the described band water jacket double-tube sheet (7) radial baffle (28) and the circumferential traverse baffle (27) that links to each other with radial baffle (28).
8. high-efficiency and energy-saving type polycrystalline silicon reducing furnace according to claim 7; The quantity that it is characterized in that described radial baffle (28) is at least 4; Each and radial baffle (28) are connected with two circumferential traverse baffles (27) at least, and radial baffle (28) and circumferential traverse baffle (27) have the arc-shaped transition section.
9. high-efficiency and energy-saving type polycrystalline silicon reducing furnace according to claim 1 is characterized in that described body of heater is provided with a plurality of observation visors (11) and thermometer hole (20) along outer wall, observes visor (11) and thermometer hole (20) and is provided with water coolant and expansion joint (13).
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Cited By (10)
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| CN103342362A (en) * | 2013-07-12 | 2013-10-09 | 新特能源股份有限公司 | Heat shield of polysilicon CVD (chemical vapor deposition) reactor |
| CN104724707A (en) * | 2015-03-27 | 2015-06-24 | 中国恩菲工程技术有限公司 | Chassis assembly for polycrystalline silicon reduction furnace |
| CN105758182A (en) * | 2016-04-26 | 2016-07-13 | 哈尔滨工业大学 | Oppositely-opened radiative heating furnace and furnace body |
| CN106927466A (en) * | 2017-04-05 | 2017-07-07 | 亚洲硅业（青海）有限公司 | A kind of 48 pairs of rod reducing furnace body structures |
| CN108101062A (en) * | 2018-01-17 | 2018-06-01 | 江苏中能硅业科技发展有限公司 | A kind of preparation process of polycrystalline silicon reducing furnace and its furnace tube inner wall functional layer |
| CN108557824A (en) * | 2017-04-01 | 2018-09-21 | 上海韵申新能源科技有限公司 | A kind of gas phase controllable type polycrystalline silicon reducing furnace |
| CN109682221A (en) * | 2018-12-18 | 2019-04-26 | 中国恩菲工程技术有限公司 | Heating plant and heat-exchange system |
| CN111957280A (en) * | 2020-08-03 | 2020-11-20 | 亚洲硅业(青海)股份有限公司 | Reactor with adjustable electromagnetic field distribution |
| CN112938985A (en) * | 2021-03-01 | 2021-06-11 | 江苏鑫华半导体材料科技有限公司 | Polycrystalline silicon reduction furnace and polycrystalline silicon chemical vapor deposition method |
| CN115072725A (en) * | 2022-07-13 | 2022-09-20 | 江苏中圣高科技产业有限公司 | Waste heat recovery system and process for polycrystalline silicon production process |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070123011A1 (en) * | 2005-11-29 | 2007-05-31 | Chisso Corporation | Production process for high purity polycrystal silicon and production apparatus for the same |
| CN101798084A (en) * | 2010-04-02 | 2010-08-11 | 江苏双良锅炉有限公司 | Hydrogenation furnace |
| CN201793375U (en) * | 2010-06-08 | 2011-04-13 | 江苏中能硅业科技发展有限公司 | Reduction furnace for producing polysilicon |
| CN102145891A (en) * | 2011-04-02 | 2011-08-10 | 天津大学 | Energy-saving furnace body of polycrystalline silicon reduction furnace |
| CN202246093U (en) * | 2011-09-06 | 2012-05-30 | 江苏中圣高科技产业有限公司 | Energy-saving polycrystalline silicon reduction furnace |
-
2011
- 2011-09-06 CN CN2011102622937A patent/CN102424386B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070123011A1 (en) * | 2005-11-29 | 2007-05-31 | Chisso Corporation | Production process for high purity polycrystal silicon and production apparatus for the same |
| CN101798084A (en) * | 2010-04-02 | 2010-08-11 | 江苏双良锅炉有限公司 | Hydrogenation furnace |
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