CN215479763U - Novel one-way polycrystalline silicon reduction furnace - Google Patents
Novel one-way polycrystalline silicon reduction furnace Download PDFInfo
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- CN215479763U CN215479763U CN202121740495.3U CN202121740495U CN215479763U CN 215479763 U CN215479763 U CN 215479763U CN 202121740495 U CN202121740495 U CN 202121740495U CN 215479763 U CN215479763 U CN 215479763U
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Abstract
The utility model provides a novel one-way polycrystalline silicon reduction furnace, which comprises a chassis; the furnace cover is buckled on the chassis and encloses a furnace chamber with the chassis; the jacket ring is sleeved on the furnace cover; a heating assembly; the heating assembly is arranged on the base plate and is positioned in the furnace cavity; the hydrogen ring pipe is arranged in the furnace cavity; the tail gas outlet is arranged in the center of the top of the furnace cover, the top of the furnace cover is in a dome shape, the tail gas outlet is further sleeved with an expansion joint, and the feeding nozzle is arranged on the chassis. The problem of flow dead zones in the top area of the 'full-back mixing type' reduction furnace reactor can be solved, the condition that the internal local temperature of the 'full-back mixing type' reduction furnace reactor is overhigh is solved, and the effect of improving the output quality of polycrystalline silicon is achieved.
Description
Technical Field
The utility model relates to a reduction furnace, in particular to a novel one-way polycrystalline silicon reduction furnace.
Background
Polycrystalline silicon is an extremely important intermediate product in the silicon product industry chain, is a main raw material for manufacturing monocrystalline silicon, solar cells and high-purity silicon products, and thus becomes the most basic raw material for the information industry and the new energy industry.
At present, the main process technology for producing polycrystalline silicon at home and abroad is an improved Siemens method, and trichlorosilane and hydrogen are subjected to chemical vapor deposition reaction in a reduction furnace at a certain temperature and pressure to generate polycrystalline silicon and complex byproducts such as silicon tetroxide, dichlorosilane, hydrogen chloride and the like. The traditional Siemens bell jar reactor is a 'full back mixing type' reactor, gas enters a furnace body from a gas inlet on a chassis of a vapor deposition reactor, polycrystalline silicon is deposited and generated on an electrified high-temperature silicon rod, and tail gas after reaction is discharged from a gas outlet on the chassis. For a full back-mixing type reactor, materials enter the reactor and can be quickly diluted, so that the conversion rate is relatively low, dead zones are easy to appear at the top, and short circuits are easy to appear in the reactor; the advantages are that the concentration difference of each part is relatively small, the whole silicon rod grows uniformly, and the appearance is good. The application of the reactor in the structural form is mature day by day, and the future promotion space is limited along with the improvement of years.
SUMMERY OF THE UTILITY MODEL
In view of the above disadvantages of the existing reduction furnace, the utility model provides a novel one-way polysilicon reduction furnace, which can solve the problem of flow dead zone in the top region of the 'full back mixing type' reduction furnace reactor, solve the problem of overhigh local temperature in the 'full back mixing type' reduction furnace reactor, and realize the effect of improving the output quality of polysilicon.
In order to achieve the purpose, the utility model adopts the following technical scheme:
a novel one-way polycrystalline silicon reduction furnace comprises a chassis; the furnace cover is buckled on the chassis and encloses a furnace chamber with the chassis; the jacket ring is sleeved on the furnace cover; a heating assembly; the heating assembly is arranged on the base plate and is positioned in the furnace cavity; the hydrogen ring pipe is arranged in the furnace cavity; the tail gas outlet is arranged in the center of the top of the furnace cover, the top of the furnace cover is in a dome shape, the tail gas outlet is further sleeved with an expansion joint, and the feeding nozzle is arranged on the chassis.
According to one aspect of the utility model, the heating assembly comprises an electrode disposed on the base plate and a silicon rod disposed on the electrode.
According to one aspect of the utility model, the jacket is provided with a water inlet and a drain outlet.
According to one aspect of the utility model, the jacket is a half-pipe helical jacket.
According to one aspect of the utility model, the furnace cover is provided with a sight glass, and the gas outlet end of the hydrogen ring pipe faces the sight glass.
According to one aspect of the utility model, the number of electrodes is a multiple of 12, the electrodes being arranged equidistantly on the chassis in the form of concentric rings.
According to one aspect of the utility model, the furnace cover is made of high-temperature special material alloy and stainless steel composite plates, and the inner wall of the furnace cover is provided with a coating.
According to one aspect of the utility model, a gasket water inlet and outlet is arranged on the chassis.
The implementation of the utility model has the advantages that:
the utility model provides a novel one-way polycrystalline silicon reduction furnace, which comprises a chassis; the furnace cover is buckled on the chassis and encloses a furnace chamber with the chassis; the jacket ring is sleeved on the furnace cover; a heating assembly; the heating assembly is arranged on the base plate and is positioned in the furnace cavity; the hydrogen ring pipe is arranged in the furnace cavity; the tail gas outlet is arranged in the center of the top of the furnace cover, the top of the furnace cover is in a dome shape, the tail gas outlet is further sleeved with an expansion joint, and the feeding nozzle is arranged on the chassis. The problem of flow dead zones in the top area of the 'full-back mixing type' reduction furnace reactor can be solved, the condition that the internal local temperature of the 'full-back mixing type' reduction furnace reactor is overhigh is solved, and the effect of improving the output quality of polycrystalline silicon is achieved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a novel unidirectional polysilicon reduction furnace according to the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the actual production of the plug flow polycrystalline silicon reduction furnace, an improved Siemens method is utilized, trichlorosilane and hydrogen are subjected to chemical vapor deposition reaction in the reduction furnace at a certain temperature and pressure to generate polycrystalline silicon, and tail gas gases such as silicon tetroxide, dichlorosilane, hydrogen chloride and the like are generated at the same time. For the plug flow reduction furnace, materials enter from an air inlet nozzle on a chassis 4, tail gas is generated after deposition reaction is carried out on a silicon rod 10 electrified by an electrode 5, and high-temperature tail gas is conveyed to the subsequent heat exchange and tail gas treatment through a tail gas outlet 11 at the top and a tail gas port flange 13.
As shown in fig. 1, a novel unidirectional polysilicon reduction furnace comprises a chassis 4; the furnace cover 1 is buckled on the base plate 4, and the furnace cover 1 and the base plate 4 enclose a furnace chamber; the jacket 2 is sleeved on the furnace cover 1; a heating assembly; the heating assembly is arranged on the base plate 4 and is positioned in the furnace cavity; the hydrogen ring pipe 8 is arranged in the furnace cavity; feed nozzle and tail gas export 11, tail gas export 11 sets up in the central authorities at furnace mantle 1 top, the top of furnace mantle 1 is the dome shape, tail gas export 11 still overlaps and is equipped with expansion joint 12, feed nozzle sets up on chassis 4.
In actual use, the tail gas outlet also has a flange 14 at the end.
In the present embodiment, the heating assembly includes an electrode 5 disposed on the bottom plate 4 and a silicon rod 10 disposed on the electrode 5. The silicon cores of the furnace types have different heights and can be matched with the arrangement schemes of the chassis.
In this embodiment, the jacket 2 is provided with a water inlet 3 and a drain outlet 6.
In this embodiment, the jacket 2 is a half-pipe spiral jacket. The jacket of the straight cylinder and the end socket on the furnace body adopts high-temperature cooling water, the jacket adopts a half-pipe spiral jacket, and the outside of the jacket is reinforced by reinforcing ribs.
In practical use, high-temperature cooling water is adopted to cool in a cooling cavity of a jacket 2 of a furnace body bell jar 1, and bell jar jacket cooling water enters from a bell jar jacket cooling water inlet 6 and is then cooled by a pipeline behind the bell jar jacket cooling water inlet 13. And the gasket cooling water enters and exits from the gasket water inlet/outlet 7 and is cooled by low-temperature cooling water. And a chassis 4 cooling flow passage is formed in the chassis 4, and the cooling flow passage is cooled by adopting medium-temperature cooling water.
In this embodiment, the furnace cover 1 is provided with a viewing mirror 9, and the gas outlet end of the hydrogen ring pipe 8 faces the viewing mirror 9.
In practical use, the hydrogen ring pipe 8 on the furnace body bell jar 1 is connected with the sight glass 9, the sight glass is blown by hydrogen to ensure the visual field of the sight glass, and the specific deposition condition of the silicon rod 10 is observed and confirmed through the sight glass 9.
In the present embodiment, the number of the electrodes 5 is a multiple of 12, and the electrodes 5 are arranged on the chassis 4 in concentric circles in an equidistant manner.
In practical use, the plurality of air inlet nozzles on the base plate 4 are uniformly distributed on each ring according to the distribution of the electrodes 5, and the flow regulating valve is adopted on the air inlet header pipe to control and output signals, so that the sectional and ring-divided flow control of the process feeding can be realized.
In this embodiment, the furnace cover 1 is made of a high-temperature special alloy and a stainless steel composite plate, and a coating is disposed on the inner wall of the furnace cover 1. The impurities of the metal material are prevented from being separated out at high temperature, and the outward heat radiation of the silicon rod can be effectively reflected to reduce the loss of heat.
In this embodiment, a gasket water inlet/outlet 7 is arranged on the chassis 4.
When the novel plug flow polycrystalline silicon reduction furnace is adopted for producing polycrystalline silicon, materials have uniform speed distribution in the reactor, and the materials keep continuous and stable flow in the reaction process and move forwards in the reactor in parallel. The novel plug flow polycrystalline silicon reduction furnace can realize control and adjustment of local materials, can conveniently and effectively control the polycrystalline silicon generation quality, and effectively improves the production efficiency.
The working principle is as follows:
in the actual production of the plug flow polycrystalline silicon reduction furnace, an improved Siemens method is utilized, trichlorosilane and hydrogen are subjected to chemical vapor deposition reaction in the reduction furnace at a certain temperature and pressure to generate polycrystalline silicon, and tail gas gases such as silicon tetroxide, dichlorosilane, hydrogen chloride and the like are generated at the same time. For the plug flow reduction furnace, materials enter from an air inlet nozzle on a chassis 4, tail gas is generated after deposition reaction is carried out on a silicon rod 10 electrified by an electrode 5, and high-temperature tail gas is conveyed to the subsequent heat exchange and tail gas treatment through a tail gas outlet 11 at the top and a tail gas port flange 13.
The implementation of the utility model has the advantages that:
the utility model provides a novel one-way polycrystalline silicon reduction furnace, which comprises a chassis; the furnace cover is buckled on the chassis and encloses a furnace chamber with the chassis; the jacket ring is sleeved on the furnace cover; a heating assembly; the heating assembly is arranged on the base plate and is positioned in the furnace cavity; the hydrogen ring pipe is arranged in the furnace cavity; the tail gas outlet is arranged in the center of the top of the furnace cover, the top of the furnace cover is in a dome shape, the tail gas outlet is further sleeved with an expansion joint, and the feeding nozzle is arranged on the chassis. The problem of flow dead zones in the top area of the 'full-back mixing type' reduction furnace reactor can be solved, the condition that the internal local temperature of the 'full-back mixing type' reduction furnace reactor is overhigh is solved, and the effect of improving the output quality of polycrystalline silicon is achieved. The utility model can provide a novel plug flow polysilicon reduction furnace by designing, calculating and manufacturing a novel structural scheme. The materials of the reduction furnace enter from the air inlet nozzle of the chassis, have uniform velocity distribution in the reactor, the materials keep continuous and stable flow in the reaction process, move forwards in parallel in the reactor, and keep the same residence time of all the materials in the reactor. And the reaction process is combined, so that the full utilization of materials is realized, the energy consumption is reduced, and the product yield is improved. Meanwhile, the optimized design ensures that the production quality of the reduction furnace is more controllable, and is beneficial to improving the product quality and being used for production in a large scale.
The above description is only an embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention disclosed herein are intended to be covered by the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.
Claims (8)
1. A novel one-way polycrystalline silicon reduction furnace is characterized in that: the novel unidirectional polycrystalline silicon reduction furnace comprises a chassis; the furnace cover is buckled on the chassis and encloses a furnace chamber with the chassis; the jacket ring is sleeved on the furnace cover; a heating assembly; the heating assembly is arranged on the base plate and is positioned in the furnace cavity; the hydrogen ring pipe is arranged in the furnace cavity; the tail gas outlet is arranged in the center of the top of the furnace cover, the top of the furnace cover is in a dome shape, the tail gas outlet is further sleeved with an expansion joint, and the feeding nozzle is arranged on the chassis.
2. A novel unidirectional polysilicon reduction furnace according to claim 1, wherein: the heating assembly comprises an electrode arranged on the base plate and a silicon rod arranged on the electrode.
3. A novel unidirectional polysilicon reduction furnace according to claim 2, wherein: the jacket is provided with a water inlet hole and a drain port.
4. A novel unidirectional polysilicon reduction furnace according to claim 3, wherein: the jacket adopts a half-pipe spiral jacket.
5. The novel unidirectional polysilicon reduction furnace according to claim 4, wherein: the furnace cover is provided with a sight glass, and the gas outlet end of the hydrogen ring pipe faces the sight glass.
6. The novel unidirectional polysilicon reduction furnace according to claim 5, wherein: the number of the electrodes is multiple of 12, and the electrodes are arranged on the chassis in concentric circle type annular equidistance.
7. The novel unidirectional polysilicon reduction furnace according to claim 6, wherein: the furnace cover is made of high-temperature special material alloy and stainless steel composite plates, and a coating is arranged on the inner wall of the furnace cover.
8. The novel unidirectional polysilicon reduction furnace according to claim 7, wherein: and a gasket water inlet and a gasket water outlet are arranged on the chassis.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121740495.3U CN215479763U (en) | 2021-07-29 | 2021-07-29 | Novel one-way polycrystalline silicon reduction furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121740495.3U CN215479763U (en) | 2021-07-29 | 2021-07-29 | Novel one-way polycrystalline silicon reduction furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN215479763U true CN215479763U (en) | 2022-01-11 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202121740495.3U Active CN215479763U (en) | 2021-07-29 | 2021-07-29 | Novel one-way polycrystalline silicon reduction furnace |
Country Status (1)
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|---|---|
| CN (1) | CN215479763U (en) |
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2021
- 2021-07-29 CN CN202121740495.3U patent/CN215479763U/en active Active
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