CN201473329U - Polysilicon reducing furnace - Google Patents
Polysilicon reducing furnace Download PDFInfo
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- CN201473329U CN201473329U CN2009202308365U CN200920230836U CN201473329U CN 201473329 U CN201473329 U CN 201473329U CN 2009202308365 U CN2009202308365 U CN 2009202308365U CN 200920230836 U CN200920230836 U CN 200920230836U CN 201473329 U CN201473329 U CN 201473329U
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Abstract
The utility model discloses a polysilicon reducing furnace, which comprises a furnace body, a base plate arranged on the lower portion of the furnace body, electrodes disposed on the base plate, silicon cores installed corresponding to the electrodes and an air inlet pipe and an air outlet pipe which are disposed on the lower portion of the base plate, wherein the air inlet pipe is communicated with a nozzle mounted on the base plate; the air outlet pipe is communicated with a tail gas outlet installed on the base plate; a jacket arranged inside the furnace body is respectively communicated with a cooling water inlet pipe and a cooling water outlet pipe of the furnace body; and a cooling water inlet pipe and a cooling water outlet pipe of the base plate are disposed on the base plate. The polysilicon reducing furnace is characterized in that 48 pairs of, namely 96 electrodes are evenly distributed on the base plate. By improvement on quantity and distribution of the electrodes and the nozzle on the base plate, compared with the existing reducing furnace, yield of each batch of the polysilicon reducing furnace is greatly increased, power consumption of each kilometer of polysilicon is reduced, and comprehensive production cost and energy consumption of polysilicon are accordingly decreased.
Description
Technical field
The utility model relates to a kind of polycrystalline silicon reducing furnace, mainly is to carry out the reduction furnace that polysilicon is produced in chemical vapour deposition with trichlorosilane and hydrogen on the silicon core of heating.
Background technology
At present, the main technique technology of producing polysilicon both at home and abroad is " an improvement Siemens Method ": with chlorine and hydrogen synthesising hydrogen, hydrogenchloride and silica flour be synthesizing trichlorosilane at a certain temperature, then trichlorosilane is separated rectification and purification, high-purity trichlorosilane after the purification and hydrogen are mixed in proportion the back and feed in the polycrystalline silicon reducing furnace, under certain temperature and pressure, on energising high temperature silicon core, carry out deposition reaction and generate polysilicon, temperature of reaction is controlled at about 1080 degrees centigrade, the final rod-like polycrystal silicon product that generates generates silicon tetrachloride simultaneously, dichloro-dihydro silicon, by products such as hydrogenchloride.
Polycrystalline silicon reducing furnace is the major equipment that " improvement Siemens Method " produces polysilicon, form by chassis, the bell-jar double-layer furnace body that contains the chuck water coolant, electrode, visor hole, mixed air inlet pipe, mixed air tail gas escape pipe, body of heater cooling water inlet pipe, body of heater cooling water outlet pipe, chassis cooling water inlet pipe, chassis cooling water outlet pipe and other appurtenances, the body of heater main body adopts stainless steel, to reduce the pollution of equipment material to product.
The utility model content
Technical problem to be solved in the utility model provides a kind of polycrystalline silicon reducing furnace, and this polycrystalline silicon reducing furnace list furnace output has lifting significantly than existing polycrystalline silicon reducing furnace list furnace output.
A kind of polycrystalline silicon reducing furnace, comprise body of heater, be arranged on the chassis of body of heater below, the silicon core that is arranged on the electrode on the chassis and should installs with electrode pair, be arranged on the inlet pipe and the escape pipe of below, chassis, inlet pipe and the spout connection that is installed on the chassis, escape pipe is communicated with tail gas outlet on being installed in the chassis, be provided with chuck in the body of heater, chuck is connected with body of heater cooling water inlet pipe and body of heater cooling water outlet pipe respectively, and the chassis is provided with chassis cooling water inlet pipe and chassis cooling water outlet pipe, it is characterized in that described electrode is 48 pairs, promptly 96, be evenly distributed on the chassis.
Wherein, described electrode is 5 circumference uniform distribution in the upper edge, chassis, and to excircle, the quantity of electrode is respectively 6 of first laps, 12 on second circle, 18 on the 3rd circle, 24 on the 4th circle, 36 on the 5th circle by inner periphery.
Wherein, described spout is 66, is evenly distributed on the chassis; Described tail gas outlet is 1, is arranged on center chassis.
Wherein, described spout is 5 circumference uniform distribution in the upper edge, chassis, interior spout circumference is arranged between tail gas outlet and the interior electrode circumference, other spout circumference is arranged between adjacent two electrode circumference, to excircle, the quantity of spout is respectively 3 of first laps, 6 on second circle, 12 on the 3rd circle, 18 on the 4th circle, 27 on the 5th circle by inner periphery.
Wherein, each encloses electrode, and two adjacent electrodes connect by battery lead plate, and compose in series circuit loop respectively by the silicon core that is arranged on the electrode.
Beneficial effect: polycrystalline silicon reducing furnace of the present utility model is by the improvement to the electrode on the chassis, spout quantity and distribution, make the existing 24 pairs of excellent reduction furnaces of every batch of output improve 80～120%, the corresponding reduction by 20～50% of the power consumption of per kilogram polysilicon, the also corresponding reduction of the comprehensive production cost of polysilicon and energy consumption.
Description of drawings
The following drawings is in conjunction with specification sheets specific description the utility model, but the utility model is not limited to the concrete form that is shown in these accompanying drawings.
Fig. 1 is the structural representation of polycrystalline silicon reducing furnace of the present utility model.
Fig. 2 is the chassis vertical view of polycrystalline silicon reducing furnace of the present utility model.
Embodiment
The polycrystalline silicon reducing furnace structural representation that the utility model relates to as shown in Figure 1,1 (contains the chuck water coolant, bell-jar for body of heater, double-deck), 2 is the visor hole, 3 is the chassis, 4 is the chassis cooling water inlet pipe, and 5 is the chassis cooling water outlet pipe, and 6 is inlet pipe, 7 is spout, and 8 is escape pipe, and 9 is the body of heater cooling water inlet pipe, 10 is the body of heater cooling water outlet pipe, and 11 are graphite chuck (being used to connect silicon core and electrode), and 12 is electrode, 13 is the silicon core, and 14 is chuck water coolant flow deflector, and 15 are the tail gas outlet.
Polycrystalline silicon reducing furnace of the present utility model comprises body of heater 1, and body of heater 1 main body adopts stainless steel, to reduce the pollution of equipment material to product.Body of heater 1 below is provided with chassis 3, chassis 3 be provided with electrode 12 and with the silicon core 13 of electrode 12 corresponding installations, 3 belows, chassis are provided with inlet pipe 6 and escape pipe 8, inlet pipe 6 is communicated with spout 7 on being installed in chassis 3, escape pipe 8 is communicated with tail gas outlet 15 on being installed in chassis 3, be provided with chuck in the body of heater 1, chuck is connected with body of heater cooling water inlet pipe 9 and body of heater cooling water outlet pipe 10 respectively, and chassis 3 is provided with chassis cooling water inlet pipe 4 and chassis cooling water outlet pipe 5.Described electrode 12 is 48 pairs, promptly 96, and 5 the circumference uniform distribution in 3 upper edges, chassis, to excircle, the quantity of electrode is respectively 6 of first laps, 12 on second circle, 18 on the 3rd circle, 24 on the 4th circle, 36 (see figure 2)s of the 5th circle by inner periphery.Each encloses electrode, and two adjacent electrodes 12 connect by battery lead plate, and composes in series circuit loop respectively by the silicon core 13 that is arranged on the electrode 12.Described tail gas outlet 15 is 1, is arranged on 3 centers, chassis.Described spout 7 is 66,5 the circumference uniform distribution in 3 upper edges, chassis, interior spout circumference is arranged between tail gas outlet 15 and the interior electrode circumference, other spout circumference is arranged between adjacent two electrode circumference, to excircle, the quantity of spout is respectively 3 of first laps, 6 on second circle, 12 on the 3rd circle, 18 on the 4th circle, 27 (see figure 2)s of the 5th circle by inner periphery.
When preparing to produce, on each counter electrode 12 on the chassis 3, install the graphite chuck 11 that connects silicon core 13 and electrode 12 and install silicon core 13, again bell-jar double-layer furnace body 1 lifting that contains the chuck water coolant is installed on the chassis 3, carry out gas-tightness test, confirm air tight after, by the 13 energising heating of 12 pairs of silicon cores of electrode, controlled temperature to 1080 degree centigrade, on high temperature energising silicon core 13, carry out chemical vapour deposition reaction by the trichlorosilane of inlet pipe spout 7 ejections and the gas mixture of hydrogen, finally generate rod-like polycrystal silicon product.
Claims (5)
1. polycrystalline silicon reducing furnace, comprise body of heater (1), be arranged on the chassis (3) of body of heater (1) below, be arranged on the chassis (3) electrode (12) and with the silicon core (13) of the corresponding installation of electrode (12), be arranged on the inlet pipe (6) and the escape pipe (8) of below, chassis (3), inlet pipe (6) is communicated with spout (7) on being installed in chassis (3), escape pipe (8) is communicated with tail gas outlet (15) on being installed in chassis (3), body of heater is provided with chuck in (1), chuck is connected with body of heater cooling water inlet pipe (9) and body of heater cooling water outlet pipe (10) respectively, chassis (3) is provided with chassis cooling water inlet pipe (4) and chassis cooling water outlet pipe (5), it is characterized in that described electrode (12) is 48 pairs, promptly 96, be evenly distributed on the chassis (3).
2. polycrystalline silicon reducing furnace according to claim 1, it is characterized in that described electrode (12) on the chassis 5 the circumference uniform distribution in (3) upper edge, to excircle, the quantity of electrode is respectively 6 of first laps, 12 on second circle, 18 on the 3rd circle, 24 on the 4th circle, 36 on the 5th circle by inner periphery.
3. polycrystalline silicon reducing furnace according to claim 2 is characterized in that described spout (7) is 66, is evenly distributed on the chassis (3); Described tail gas outlet (15) is 1, is arranged on center, chassis (3).
4. polycrystalline silicon reducing furnace according to claim 3, it is characterized in that described spout (7) in the upper edge, chassis 5 circumference uniform distribution, interior spout circumference is arranged between tail gas outlet (15) and the interior electrode circumference, other spout circumference is arranged between adjacent two electrode circumference, to excircle, the quantity of spout is respectively 3 of first laps, 6 on second circle, 12 on the 3rd circle, 18 on the 4th circle, 27 on the 5th circle by inner periphery.
5. according to any described polycrystalline silicon reducing furnace in the claim 2～4, it is characterized in that each circle electrode, adjacent two electrodes (12) connect by battery lead plate, and compose in series circuit loop respectively by the silicon core (13) that is arranged on the electrode (12).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009202308365U CN201473329U (en) | 2009-09-08 | 2009-09-08 | Polysilicon reducing furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009202308365U CN201473329U (en) | 2009-09-08 | 2009-09-08 | Polysilicon reducing furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201473329U true CN201473329U (en) | 2010-05-19 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009202308365U Ceased CN201473329U (en) | 2009-09-08 | 2009-09-08 | Polysilicon reducing furnace |
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| Country | Link |
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| CN (1) | CN201473329U (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101870471A (en) * | 2010-07-08 | 2010-10-27 | 江苏中能硅业科技发展有限公司 | High-efficiency large polycrystalline silicon reducing furnace |
| CN102320604A (en) * | 2011-07-01 | 2012-01-18 | 中国恩菲工程技术有限公司 | Polysilicon reducing furnace with novel nozzles |
| CN102351191A (en) * | 2011-07-01 | 2012-02-15 | 中国恩菲工程技术有限公司 | Polysilicon reducing furnace possessing novel nozzles |
| CN102392299A (en) * | 2011-11-28 | 2012-03-28 | 江苏双良锅炉有限公司 | Polycrystalline silicon reduction furnace with 48 pairs of rods |
| CN102674361A (en) * | 2012-05-09 | 2012-09-19 | 天津大学 | Top structure of inner container of energy-saving type polysilicon reduction furnace and implementation method for top structure |
| CN109682221A (en) * | 2018-12-18 | 2019-04-26 | 中国恩菲工程技术有限公司 | Heating plant and heat-exchange system |
-
2009
- 2009-09-08 CN CN2009202308365U patent/CN201473329U/en not_active Ceased
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101870471A (en) * | 2010-07-08 | 2010-10-27 | 江苏中能硅业科技发展有限公司 | High-efficiency large polycrystalline silicon reducing furnace |
| CN101870471B (en) * | 2010-07-08 | 2012-06-13 | 江苏中能硅业科技发展有限公司 | High-efficiency large polycrystalline silicon reducing furnace |
| CN102320604A (en) * | 2011-07-01 | 2012-01-18 | 中国恩菲工程技术有限公司 | Polysilicon reducing furnace with novel nozzles |
| CN102351191A (en) * | 2011-07-01 | 2012-02-15 | 中国恩菲工程技术有限公司 | Polysilicon reducing furnace possessing novel nozzles |
| CN102392299A (en) * | 2011-11-28 | 2012-03-28 | 江苏双良锅炉有限公司 | Polycrystalline silicon reduction furnace with 48 pairs of rods |
| CN102674361A (en) * | 2012-05-09 | 2012-09-19 | 天津大学 | Top structure of inner container of energy-saving type polysilicon reduction furnace and implementation method for top structure |
| CN102674361B (en) * | 2012-05-09 | 2014-04-02 | 天津大学 | Top structure of inner container of energy-saving type polysilicon reduction furnace and implementation method for top structure |
| CN109682221A (en) * | 2018-12-18 | 2019-04-26 | 中国恩菲工程技术有限公司 | Heating plant and heat-exchange system |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| IW01 | Full invalidation of patent right |
Decision date of declaring invalidation: 20150601 Decision number of declaring invalidation: 26049 Granted publication date: 20100519 |