CN103880009B - A kind of offgas outlet connects polycrystalline silicon reducing furnace and the method for attachment of inside extending tube - Google Patents
A kind of offgas outlet connects polycrystalline silicon reducing furnace and the method for attachment of inside extending tube Download PDFInfo
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- CN103880009B CN103880009B CN201410101215.2A CN201410101215A CN103880009B CN 103880009 B CN103880009 B CN 103880009B CN 201410101215 A CN201410101215 A CN 201410101215A CN 103880009 B CN103880009 B CN 103880009B
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- extending tube
- inside extending
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- regular hexagon
- furnace
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 43
- 238000000034 method Methods 0.000 title claims abstract description 11
- 230000009467 reduction Effects 0.000 claims abstract description 58
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 49
- 239000000203 mixture Substances 0.000 claims abstract description 26
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 19
- 239000010703 silicon Substances 0.000 claims abstract description 19
- 239000004484 Briquette Substances 0.000 claims abstract description 18
- 239000000498 cooling water Substances 0.000 claims description 18
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 claims description 3
- 239000010439 graphite Substances 0.000 claims description 3
- 238000007789 sealing Methods 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 abstract description 30
- 230000000694 effects Effects 0.000 abstract description 6
- 238000002156 mixing Methods 0.000 abstract description 6
- 230000009466 transformation Effects 0.000 abstract description 3
- 238000010992 reflux Methods 0.000 abstract description 2
- 238000006722 reduction reaction Methods 0.000 description 50
- 239000007789 gas Substances 0.000 description 43
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 4
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 4
- 239000007921 spray Substances 0.000 description 4
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 4
- 239000005052 trichlorosilane Substances 0.000 description 4
- 239000002826 coolant Substances 0.000 description 3
- 238000005265 energy consumption Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 230000007306 turnover Effects 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 235000002017 Zea mays subsp mays Nutrition 0.000 description 1
- 241000482268 Zea mays subsp. mays Species 0.000 description 1
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 235000013312 flour Nutrition 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000000191 radiation effect Effects 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Abstract
The present invention relates to polycrystalline silicon reducing furnace and method of attachment that a kind of offgas outlet connects inside extending tube; The dome-type for atresia taken over a business by reduction furnace, and center offgas outlet connects inside extending tube and vertically stretches in stove, and inside extending tube height is higher than silicon rod, and inside extending tube is socketed regular hexagon shape silico briquette outward; Chassis of reducing furnace powers on very one deck, by arranged in regular hexagon shape.Regular hexagon shape silico briquette internal diameter, slightly larger than inside extending tube external diameter, is inserted in facilitate; The orthohexagonal length of side is 1.05-1.2 times of inside extending tube external diameter.The inside extending tube that offgas outlet connects avoids mixing in stove and makes short circuit leave with rage, increases the residence time of gas mixture in reduction furnace, improves the transformation efficiency of gas mixture.Inside extending tube Forced Mixing gas, through upper of furnace body space, effectively avoids the generation in reduction furnace overhead reflux dead band; The regular hexagon nut type silico briquette that inside extending tube overcoat has can play the effect of deposit spathic silicon equally, and the lifting for polysilicon output has active effect.
Description
Technical field
The invention belongs to technical field of polysilicon production, particularly Siemens Method produces the energy-conservation large polycrystalline silicon reducing furnace of one of polysilicon; Relate to concrete structure and method of attachment that an offgas outlet connects the Novel polysilicon reduction furnace of inside extending tube.
Background technology
Production of polysilicon corporate boss will adopt " improved Siemens " both at home and abroad at present.The Production Flow Chart of the method is by hydrogenchloride and silica flour synthesizing trichlorosilane at a certain temperature, then to trichlorosilane rectification and purification, after high-purity trichlorosilane after purification and hydrogen are mixed in proportion, pass under certain temperature and pressure in polycrystalline silicon reducing furnace, energising high temperature silicon core carries out vapor deposition reaction and generates polysilicon, unreacted tail gas is discharged from the outlet of stone or metal plate for standing a stove on as a precaution against fire central authorities again, enters subsequent processing.Because reaction occurs under about 1150 DEG C, therefore the power consumption of reduction furnace is quite large, is topmost energy consumption in polysilicon production process.
Current reduction reduction furnace energy consumption can by increasing silicon core, and namely silicon core is more, and reduction furnace polysilicon output is larger, and the polysilicon energy consumption of its unit mass is relatively lower; Moreover, silicon core distribution more evenly, more intensive, then between silicon core, mutual thermal-radiating effect is stronger, the temperature head that this thermal radiation effect will reduce between silicon wicking surface further, make the temperature trend of each silicon core average, thus ensure that the growing state of each silicon core silicon is relatively more consistent, improve the quality of polysilicon product.
During with " improved Siemens " polysilicon processed, trichlorosilane and hydrogen lean on the pressure of material self to spray in reduction furnace, turn back again after furnace roof, existing depending nozzle makes material pneumatic spray high method, through analog calculation and the checking of producing reality, the actual height that air-flow can only be sprayed onto 1 meter, and silicon rod height is generally between 2.2 meters to 2.8 meters, nozzle of air supply and offgas outlet are all positioned on reduction furnace stone or metal plate for standing a stove on as a precaution against fire simultaneously, and this causes following shortcoming:
The first, easily cause part mixture of feed to walk short circuit directly to discharge from the offgas outlet that pressure is low, reduce the transformation efficiency of polysilicon.
The second, because feed gas is comparatively large in inlet mouth speed, temperature is lower, make reduction furnace in the vertical direction must produce a concentration gradient and thermograde, result in polysilicon on the low side in the deposition reaction speed of electrode roots, simultaneously due to the trend also having and drive the polysilicon of electrode surface to move upward that upwards flows of gas, both actings in conjunction make the silicon core bottom growth velocity of formation slower, cause silicon core top comparatively thick, root is comparatively thin, is unfavorable for that polysilicon is produced safely and steadly.
Three, this structure causes the import high cycle speed of reduction furnace, and reduction furnace top gas speed is low, causes reduction furnace top and there is backflow dead band, reduce the output of polysilicon.
Therefore, polycrystalline silicon reducing furnace need optimize turnover gas distribution apparatus, improves furnace gas concentration gradient and thermograde, makes full use of the space of reduction furnace, CVD deposition reaction is evenly carried out on silicon plug, with ensure reduction furnace can for a long time, stable, safety, to produce efficiently.
Summary of the invention
The invention provides concrete structure and mode of connection that a kind of offgas outlet connects the Novel polysilicon reduction furnace of inside extending tube, solve the problems of the prior art, improve the quality of polysilicon product, reduce the energy expenditure of the polysilicon product of production unit quality.
Under the present invention, technical scheme is as follows:
Offgas outlet connects a polycrystalline silicon reducing furnace for inside extending tube, and the dome-type for atresia taken over a business by reduction furnace, and center offgas outlet connects inside extending tube and vertically stretches in stove, and inside extending tube height is higher than silicon rod, and inside extending tube is socketed regular hexagon shape silico briquette outward; Chassis of reducing furnace powers on very one deck, by arranged in regular hexagon shape.
Regular hexagon shape silico briquette internal diameter, slightly larger than inside extending tube external diameter, is inserted in facilitate; The orthohexagonal length of side be inside extending tube external diameter 1.05 ?1.2 times.
Regular hexagon shape silico briquette is regular hexagon nut type silico briquette, by lower and above stackingly to be wrapped up completely by inside extending tube.
Chassis of reducing furnace is provided with a ventage with the center of adjacent three electrodes of equilateral triangle arrangement, and the surrounding of each root electrode evenly arranges six ventages, and six ventages are positioned at the regular hexagon summit place centered by this electrode.
Reduction furnace method of attachment of the present invention, body of heater 11 to be fixed on chassis of reducing furnace 1 and to seal, reduction furnace is taken over a business 19 and to be fixed on body of heater 11 and to seal, silicon core 14 to be connected with chassis electrode 12 by graphite chuck 13 and to seal, silicon core 14 and electrode 12 are connected by silicon rod 15 between two at top, chassis electrode 12 is fixed to chassis of reducing furnace 1 and sealing, and be connected with power supply system, chassis gas mixture air intake control valve 2 is connected with chassis ventage 6 with gas mixture inlet pipe 3, chassis tail gas leaving air control valve 4 is connected with inside extending tube 16 with tail gas escape pipe 5, inside extending tube overcoat has some regular hexagon nut type silico briquettes 17.
Chassis of reducing furnace 1 is connected with chassis entrance of cooling water 8, chassis cooling water outlet 7; Body of heater 11 is connected with body of heater cooling water inlet 9 and body of heater cooling water outlet 10; Reduction furnace is taken over a business 19 to be connected with cooling water inlet 18, is taken over a business cooling water outlet 20.
The present invention has the following advantages:
First, the inside extending tube that offgas outlet connects avoids mixing in stove and makes short circuit leave with rage, increases the residence time of gas mixture in reduction furnace, improves the transformation efficiency of gas mixture.
Secondly, inside extending tube Forced Mixing gas, through upper of furnace body space, effectively avoids the generation in reduction furnace overhead reflux dead band, makes full use of reduction furnace Space-time idea polysilicon; Meanwhile, gas mixture is from bottom to top progressively piled up, and is uniformly distributed in reduction furnace, can reduce concentration and thermograde, ensures that whole silicon core has identical growth velocity better.Solve the silicon core thickness problem that traditional reduction furnace causes because silicon core root is different with grown on top speed, ensure that polycrystalline silicon reducing furnace is stablized and safe production.
Moreover the regular hexagon nut type silico briquette that has of inside extending tube overcoat can play the effect of deposit spathic silicon equally, the lifting for polysilicon output has active effect.
Accompanying drawing explanation
Fig. 1 is the front view that a kind of offgas outlet of patent of the present invention connects the Novel polysilicon reduction furnace of inside extending tube;
Fig. 2 is electrode and the ventage distribution schematic diagram (for 15 to rod) that a kind of offgas outlet of patent of the present invention connects the Novel polysilicon reduction furnace chassis of inside extending tube;
Fig. 3 is the Novel polysilicon reduction furnace regular hexagon nut type silico briquette vertical view that a kind of offgas outlet of patent of the present invention connects inside extending tube.
Embodiment
Below in conjunction with the drawings and specific embodiments, the Novel polysilicon reduction furnace that a kind of offgas outlet provided by the invention connects inside extending tube is described in further detail.
Offgas outlet connects an arrangement mode for the Novel polysilicon reduction furnace of inside extending tube, and the dome-type for atresia taken over a business by reduction furnace, and chassis is dispersed with electrode, ventage and center tail gas relief outlet equably; Offgas outlet connects inside extending tube and vertically stretches in stove, height is higher than silicon rod, inside extending tube is closely socketed regular hexagon nut type silico briquette outward, the regular hexagon length of side is slightly larger than inside extending tube external diameter, for ease of dismounting, silico briquette height is lower, and some regular hexagon nut type silico briquettes are by lower and above stackingly to be wrapped up completely by inside extending tube; Chassis of reducing furnace power on very one deck by arranged in regular hexagon shape; Chassis of reducing furnace is provided with a ventage with the center of adjacent three electrodes of equilateral triangle arrangement, and the surrounding of each root electrode evenly arranges six ventages, and six ventages are positioned at the regular hexagon summit place centered by this electrode.
As shown in Figures 1 to 3, body of heater 11 to be fixed on chassis of reducing furnace 1 and to seal, reduction furnace is taken over a business 19 and to be fixed on body of heater 11 and to seal, silicon core 14 to be connected with chassis electrode 12 by graphite chuck 13 and to seal, silicon core 14 and electrode 12 are connected by silicon rod 15 between two at top, chassis electrode 12 is fixed to chassis of reducing furnace 1 and sealing, and be connected with power supply system, chassis gas mixture air intake control valve 2 is connected with chassis ventage 6 with gas mixture inlet pipe 3, chassis tail gas leaving air control valve 4 is connected with inside extending tube 16 with tail gas escape pipe 5, inside extending tube overcoat has some regular hexagon nut type silico briquettes 17.Chassis of reducing furnace 1, body of heater 11, reduction furnace are taken over a business 19 respectively by chassis entrance of cooling water 8, body of heater cooling water inlet 9, are taken over a business cooling water inlet 18 and pass into water coolant, and chassis cooling water outlet 7, body of heater cooling water outlet 10, take over a business cooling water outlet 20 and be connected with needing hot systems respectively.
For 15, the offgas outlet of rod is connected to the polycrystalline silicon reducing furnace of inside extending tube, the dome-type for atresia taken over a business by reduction furnace, and chassis is dispersed with 15 pairs of electrodes, 90 ventages and 1 center tail gas relief outlet equably; The inside extending tube of offgas outlet connecting external diameter 130mm vertically stretches in stove, height higher than silicon rod 100 ?200mm, inside extending tube be closely socketed outward some length of side 140mm, height 200 ?the regular hexagon nut type silico briquette of 300mm, silico briquette is by lower and above stackingly to be wrapped up completely by inside extending tube; Chassis of reducing furnace power on very 1 layer by arranged in regular hexagon shape; Chassis of reducing furnace is provided with a ventage with the center of adjacent three electrodes of equilateral triangle arrangement, and the surrounding of each root electrode evenly arranges six ventages, and six ventages are positioned at the regular hexagon summit place centered by this electrode.
The spacing of above-mentioned adjacent two electrodes be preferably 200 ?400mm, chassis of reducing furnace and the diameter of taking over a business be preferably 1700 ?3500mm.
Embodiment 1: the operating process 1(of Novel polysilicon reduction furnace for 15 to excellent polycrystalline silicon reducing furnace):
(1) chassis gas mixture air intake control valve 2, chassis tail gas leaving air control valve 4 is opened;
(2) take over a business at the body of heater of reduction furnace, chassis of reducing furnace, reduction furnace and pass into water coolant simultaneously;
(3) SiHCl will purified
3with H
2mix by a certain percentage, then spray into reduction furnace from the inlet mouth 6 of gas mixture inlet pipe 3 through chassis gas mixture air intake control valve 2 and chassis;
(4) start the power supply system of reduction furnace to the heating of silicon core, and keep the temperature of silicon core at 1150 DEG C, reduction furnace internal pressure is 0.8Mpa;
(5) when the temperature of silicon wicking surface reaches SiHCl
3with H
2during the condition of reacting, gas mixture starts reduction reaction occurs, and reacted silicon will deposit on silicon core;
(6) reacted tail gas is discharged from tail gas escape pipe 5 through inside extending tube 16, chassis tail gas leaving air control valve 4, and the temperature of tail gas controls 550 DEG C ± 20;
(7) until when the growth in thickness of silicon core is to more than 200mm, stop power supply, and after silicon core cooling by the time, silicon core is taken out;
Embodiment 2: the operating process 2(of Novel polysilicon reduction furnace for 15 to excellent polycrystalline silicon reducing furnace):
(1) chassis gas mixture air intake control valve 2, chassis tail gas leaving air control valve 4 is opened;
(2) take over a business at the body of heater of reduction furnace, chassis of reducing furnace, reduction furnace and pass into water coolant simultaneously;
(3) SiHCl will purified
3with H
2mix by a certain percentage, then spray into reduction furnace from the inlet mouth 6 of gas mixture inlet pipe 3 through chassis gas mixture air intake control valve 2 and chassis;
(4) start the power supply system of reduction furnace to the heating of silicon core, and keep the temperature of silicon core at 1150 DEG C, reduction furnace internal pressure is 0.8Mpa;
(5) when the temperature of silicon wicking surface reaches SiHCl
3with H
2during the condition of reacting, gas mixture starts reduction reaction occurs, and reacted silicon will deposit on silicon core;
(6) reacted tail gas is discharged from tail gas escape pipe 5 through inside extending tube 16, chassis tail gas leaving air control valve 4, and the temperature of tail gas controls 450 DEG C ± 20;
(7) until when the growth in thickness of silicon core is to more than 200mm, stop power supply, and after silicon core cooling by the time, silicon core is taken out.
In embodiment 1,2, chassis offgas outlet connects inside extending tube, and mixing can be avoided to make short circuit leave with rage, and ensure that gas mixture fully reacts in reduction furnace, the turnover ratio improving gas mixture can reach 15%.Inside extending tube Forced Mixing gas is through upper of furnace body space, gas mixture is from bottom to top uniformly distributed in stove, the dead band in reduction furnace can be eliminated, enhance the flowing of gas mixture in reduction furnace, ensure that reduction temperature field in furnace and velocity field distribute more even, make each grown rate equation of silicon rod, decrease the generation of " popcorn effect ", improve the quality of polysilicon product.Moreover, the regular hexagon nut type silico briquette that inside extending tube is socketed outward additionally can increase output 5% ?8% of polysilicon.
The above example is only the preferred embodiment absolutely proving the present invention and lift, and protection scope of the present invention is not limited thereto.The equivalent alternative or conversion that those skilled in the art do on basis of the present invention, all within protection scope of the present invention.Protection scope of the present invention is as the criterion with claims.
Claims (6)
1. offgas outlet connects a polycrystalline silicon reducing furnace for inside extending tube, it is characterized in that the dome-type for atresia taken over a business by reduction furnace, and center offgas outlet connects inside extending tube and vertically stretches in stove, and inside extending tube height is higher than silicon rod, and inside extending tube is socketed regular hexagon shape silico briquette outward; Chassis of reducing furnace powers on very one deck, by arranged in regular hexagon shape.
2. reduction furnace as claimed in claim 1, is characterized in that regular hexagon shape silico briquette internal diameter is slightly larger than inside extending tube external diameter, is inserted in facilitate; The orthohexagonal length of side be inside extending tube external diameter 1.05 ?1.2 times.
3. reduction furnace as claimed in claim 1, is characterized in that regular hexagon shape silico briquette is regular hexagon nut type silico briquette, by lower and above stackingly to be wrapped up completely by inside extending tube.
4. reduction furnace as claimed in claim 1, it is characterized in that chassis of reducing furnace is provided with a ventage with the center of adjacent three electrodes of equilateral triangle arrangement, the surrounding of each root electrode evenly arranges six ventages, and six ventages are positioned at the regular hexagon summit place centered by this electrode.
5. a kind of offgas outlet as claimed in claim 1 connects the polycrystalline silicon reducing furnace method of attachment of inside extending tube, it is characterized in that body of heater to be fixed on chassis of reducing furnace and to seal, reduction furnace to be taken over a business to be fixed on body of heater and is sealed, silicon core to be connected with chassis electrode by graphite chuck and to seal, silicon core and electrode are connected by silicon rod between two at top, chassis electrode is fixed to chassis of reducing furnace and sealing, and be connected with power supply system, chassis gas mixture air intake control valve is connected with chassis ventage with gas mixture inlet pipe, chassis tail gas leaving air control valve is connected with inside extending tube with tail gas escape pipe, inside extending tube overcoat has some regular hexagon nut type silico briquettes.
6. reduction furnace method of attachment as claimed in claim 5, is characterized in that chassis of reducing furnace is connected with chassis entrance of cooling water, chassis cooling water outlet; Body of heater is connected with body of heater cooling water inlet and body of heater cooling water outlet; Reduction furnace is taken over a business to be connected with cooling water inlet, is taken over a business cooling water outlet.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410101215.2A CN103880009B (en) | 2014-03-18 | 2014-03-18 | A kind of offgas outlet connects polycrystalline silicon reducing furnace and the method for attachment of inside extending tube |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410101215.2A CN103880009B (en) | 2014-03-18 | 2014-03-18 | A kind of offgas outlet connects polycrystalline silicon reducing furnace and the method for attachment of inside extending tube |
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| CN103880009A CN103880009A (en) | 2014-06-25 |
| CN103880009B true CN103880009B (en) | 2016-01-13 |
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| CN110451511A (en) * | 2019-08-26 | 2019-11-15 | 洛阳中硅高科技有限公司 | Polycrystalline silicon reducing furnace and its open furnace method |
| CN114671439A (en) * | 2022-03-18 | 2022-06-28 | 新疆大全新能源股份有限公司 | Reduction furnace chassis cooling structure |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201105995Y (en) * | 2007-12-19 | 2008-08-27 | 王存惠 | Modified polycrystalline silicon reducing furnace |
| CN101973551A (en) * | 2010-11-12 | 2011-02-16 | 天津大学 | Polysilicon reducing furnace |
| CN102030330A (en) * | 2010-11-12 | 2011-04-27 | 天津大学 | Polysilicon reduction furnace with outlet gas collector |
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2014
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201105995Y (en) * | 2007-12-19 | 2008-08-27 | 王存惠 | Modified polycrystalline silicon reducing furnace |
| CN101973551A (en) * | 2010-11-12 | 2011-02-16 | 天津大学 | Polysilicon reducing furnace |
| CN102030330A (en) * | 2010-11-12 | 2011-04-27 | 天津大学 | Polysilicon reduction furnace with outlet gas collector |
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