CN103880009A - Polycrystalline silicon reduction furnace with exhaust outlet connected with inner stretching tube and connecting method - Google Patents
Polycrystalline silicon reduction furnace with exhaust outlet connected with inner stretching tube and connecting method Download PDFInfo
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- CN103880009A CN103880009A CN201410101215.2A CN201410101215A CN103880009A CN 103880009 A CN103880009 A CN 103880009A CN 201410101215 A CN201410101215 A CN 201410101215A CN 103880009 A CN103880009 A CN 103880009A
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- extending tube
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- 230000009467 reduction Effects 0.000 title claims abstract description 61
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 43
- 238000000034 method Methods 0.000 title claims abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 52
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 22
- 239000010703 silicon Substances 0.000 claims abstract description 22
- 239000000203 mixture Substances 0.000 claims description 24
- 239000000498 cooling water Substances 0.000 claims description 18
- 239000004484 Briquette Substances 0.000 claims description 15
- 238000007789 sealing Methods 0.000 claims description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 claims description 3
- 239000010439 graphite Substances 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 8
- 238000000151 deposition Methods 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 60
- 238000006722 reduction reaction Methods 0.000 description 49
- 229920005591 polysilicon Polymers 0.000 description 29
- 238000004519 manufacturing process Methods 0.000 description 6
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000007921 spray Substances 0.000 description 4
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 4
- 239000005052 trichlorosilane Substances 0.000 description 4
- 239000002826 coolant Substances 0.000 description 3
- 238000005265 energy consumption Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 230000007306 turnover Effects 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 235000002017 Zea mays subsp mays Nutrition 0.000 description 1
- 241000482268 Zea mays subsp. mays Species 0.000 description 1
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 235000013312 flour Nutrition 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000000191 radiation effect Effects 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Abstract
The invention relates to a polycrystalline silicon reduction furnace with an exhaust outlet connected with an inner stretching tube and a connecting method. The top tray of the reduction furnace is an imporous semi-sphere, the exhaust outlet at the center is connected with the inner stretching tube and vertically stretches into the furnace, the inner stretching tube is higher than a silicon rod, a regular hexagon silicon block sheathes outside the inner stretching tube, a layer of electrodes are distributed on the bottom tray of the reduction furnace in regular hexagon, the inner diameter of the regular hexagon silicon block is slightly greater than the outer diameter of the inner stretching tube, so that the regular hexagon silicon block sheathes onto the inner stretching tube conveniently, and the side length of the regular hexagon is 1.05-1.2 times of the outer diameter of the inner stretching tube. The inner stretching tube connected with the exhaust outlet prevents mixed gas in the furnace from going into a short line, thus prolonging the staying time of the mixed gas in the reduction furnace so as to improve the conversion rate of the mixed gas; the inner stretching tube forces the mixed gas to pass through the upper space of the furnace, thus effectively avoiding generating a backflow dead area at the top of the reduction furnace; the regular hexagon nut-shaped silicon block sheathed outside the inner stretching tube also can play a role in depositing polycrystalline silicon, and has a positive role in increasing the yield of polycrystalline silicon.
Description
Technical field
The invention belongs to technical field of polysilicon production, particularly Siemens Method is produced the energy-conservation large polycrystalline silicon reducing furnace of one of polysilicon; Relate to concrete structure and method of attachment that a tail gas outlet connects the Novel polysilicon reduction furnace of inside extending tube.
Background technology
Production of polysilicon corporate boss will adopt " improved Siemens " both at home and abroad at present.The Production Flow Chart of the method is by hydrogenchloride and silica flour synthesizing trichlorosilane at a certain temperature, then to trichlorosilane rectification and purification, after high-purity trichlorosilane after purification and hydrogen are mixed in proportion, under certain temperature and pressure, pass in polycrystalline silicon reducing furnace, on energising high temperature silicon core, carry out vapor deposition reaction and generate polysilicon, unreacted tail gas is discharged from the outlet of stone or metal plate for standing a stove on as a precaution against fire central authorities again, enters subsequent processing.Because reaction occurs under 1150 DEG C of left and right, therefore the power consumption of reduction furnace is quite large, is topmost energy consumption in polysilicon production process.
Reducing at present reduction furnace energy consumption can be by increasing silicon core, and silicon core is more, and reduction furnace polysilicon output is larger, and the polysilicon energy consumption of its unit mass is relatively lower; Moreover, silicon core distribute more evenly, more intensive, between silicon core, mutual thermal-radiating effect is stronger, this thermal radiation effect is by the temperature head further reducing between silicon wicking surface, make the temperature trend of each silicon core average, thereby the growing state that ensures each silicon core silicon is more consistent, improve the quality of polysilicon product.
During with " improved Siemens " polysilicon processed, trichlorosilane and hydrogen are to spray in reduction furnace by the pressure of material self, after furnace roof, turn back again, existing depending nozzle makes material pneumatic spray high method, through analog calculation and produce actual checking, actually air-flow can only be sprayed onto to the height of 1 meter, and silicon rod height is generally between 2.2 meters to 2.8 meters, nozzle of air supply and tail gas outlet simultaneously is all positioned on reduction furnace stone or metal plate for standing a stove on as a precaution against fire, and this causes following shortcoming:
The first, easily cause part mixture of feed to walk short circuit and directly discharge from the low tail gas outlet of pressure, reduced the transformation efficiency of polysilicon.
The second, because feed gas is inlet mouth speed is large, temperature is lower, make reduction furnace in the vertical direction must produce a concentration gradient and thermograde, cause polysilicon on the low side in the deposition reaction speed of electrode root, while is due to the trend that upwards flows and also have the polysilicon that drives electrode surface to move upward of gas, both actings in conjunction make the silicon core bottom growth velocity of formation slower, cause silicon core top thicker, root is thinner, is unfavorable for that polysilicon produces safely and steadly.
Three, this structure causes the import high cycle speed of reduction furnace, and reduction furnace top gas speed is low, has caused reduction furnace top to have backflow dead band, has reduced the output of polysilicon.
Therefore, polycrystalline silicon reducing furnace need be optimized turnover gas distribution apparatus, improves furnace gas concentration gradient and thermograde, makes full use of the space of reduction furnace, CVD deposition reaction can evenly be carried out on silicon plug, with ensure reduction furnace can be for a long time, stable, safety, produce efficiently.
Summary of the invention
The invention provides concrete structure and mode of connection that a kind of tail gas outlet connects the Novel polysilicon reduction furnace of inside extending tube, solved the problems of the prior art, improved the quality of polysilicon product, reduce the energy expenditure of the polysilicon product of production unit quality.
Under the present invention, technical scheme is as follows:
Tail gas outlet connects a polycrystalline silicon reducing furnace for inside extending tube, and reduction furnace is taken over a business the dome-type for atresia, and tail gas outlet in center connects inside extending tube vertically to be stretched in stove, and inside extending tube height is higher than silicon rod, and inside extending tube is socketed regular hexagon shape silico briquette outward; The chassis of reducing furnace very one deck that powers on, by arranged in regular hexagon shape.
Regular hexagon shape silico briquette internal diameter is slightly larger than inside extending tube external diameter, is inserted in to facilitate; The orthohexagonal length of side be inside extending tube external diameter 1.05 ?1.2 times.
Regular hexagon shape silico briquette is regular hexagon nut type silico briquette, by lower and upper stacking inside extending tube is wrapped up completely.
The center of adjacent three electrodes of arranging with equilateral triangle on chassis of reducing furnace is provided with a ventage, the surrounding of each root electrode six ventages of evenly arranging, and six ventages are positioned at the regular hexagon summit place centered by this electrode.
Reduction furnace method of attachment of the present invention, body of heater 11 is fixed on chassis of reducing furnace 1 and sealing, reduction furnace is taken over a business 19 and is fixed on body of heater 11 and sealing, silicon core 14 is connected and seals with chassis electrode 12 by graphite chuck 13, silicon core 14 and electrode 12 are joined by silicon rod 15 between two at top, chassis electrode 12 is fixed to chassis of reducing furnace 1 and sealing, and be connected with power supply system, chassis gas mixture air intake control valve 2 is connected with chassis ventage 6 with gas mixture inlet pipe 3, chassis tail gas leaving air control valve 4 is connected with inside extending tube 16 with tail gas escape pipe 5, inside extending tube overcoat has some regular hexagon nut type silico briquettes 17.
Chassis of reducing furnace 1 is connected with chassis entrance of cooling water 8, chassis cooling water outlet 7; Body of heater 11 is connected with body of heater cooling water inlet 9 and body of heater cooling water outlet 10; Reduction furnace is taken over a business 19 to be connected with cooling water inlet 18, is taken over a business cooling water outlet 20.
The present invention has the following advantages:
First, the inside extending tube that tail gas outlet connects has been avoided mixing and making short circuit leave with rage in stove, increases the residence time of gas mixture in reduction furnace, improves the transformation efficiency of gas mixture.
Secondly, inside extending tube Forced Mixing gas, through upper of furnace body space, is effectively avoided the generation in backflow dead band, reduction furnace top, makes full use of reduction furnace space and produces polysilicon; Meanwhile, gas mixture is from bottom to top progressively piled up, and in reduction furnace, is uniformly distributed, and can reduce concentration and thermograde, ensures that better whole silicon core has identical growth velocity.Solved the silicon core thickness problem that traditional reduction furnace causes because silicon core root is different with grown on top speed, guarantee polycrystalline silicon reducing furnace is stablized and safe production.
Moreover the regular hexagon nut type silico briquette that has of inside extending tube overcoat can play the effect of deposit spathic silicon equally, there is active effect for the lifting of polysilicon output.
Brief description of the drawings
Fig. 1 is the front view that a kind of tail gas outlet of patent of the present invention connects the Novel polysilicon reduction furnace of inside extending tube;
Fig. 2 is electrode and the ventage distribution schematic diagram (taking 15 pairs of rods as example) that a kind of tail gas outlet of patent of the present invention connects the Novel polysilicon reduction furnace chassis of inside extending tube;
Fig. 3 is the Novel polysilicon reduction furnace regular hexagon nut type silico briquette vertical view that a kind of tail gas outlet of patent of the present invention connects inside extending tube.
Embodiment
The Novel polysilicon reduction furnace that a kind of tail gas outlet provided by the invention is connected to inside extending tube below in conjunction with the drawings and specific embodiments is described in further detail.
Tail gas outlet connects an arrangement mode for the Novel polysilicon reduction furnace of inside extending tube, and reduction furnace is taken over a business the dome-type for atresia, chassis distributing equably electrode, ventage and center tail gas relief outlet; Tail gas outlet connects inside extending tube and vertically stretches in stove, height is higher than silicon rod, the outer closely socket of inside extending tube regular hexagon nut type silico briquette, the regular hexagon length of side is slightly larger than inside extending tube external diameter, for ease of dismounting, silico briquette height is lower, and some regular hexagon nut type silico briquettes are by lower and upper stackingly wrap up inside extending tube completely; Chassis of reducing furnace powers on very one deck by arranged in regular hexagon shape; The center of adjacent three electrodes of arranging with equilateral triangle on chassis of reducing furnace is provided with a ventage, the surrounding of each root electrode six ventages of evenly arranging, and six ventages are positioned at the regular hexagon summit place centered by this electrode.
As shown in Figures 1 to 3, body of heater 11 is fixed on chassis of reducing furnace 1 and sealing, reduction furnace is taken over a business 19 and is fixed on body of heater 11 and sealing, silicon core 14 is connected and seals with chassis electrode 12 by graphite chuck 13, silicon core 14 and electrode 12 are joined by silicon rod 15 between two at top, chassis electrode 12 is fixed to chassis of reducing furnace 1 and sealing, and be connected with power supply system, chassis gas mixture air intake control valve 2 is connected with chassis ventage 6 with gas mixture inlet pipe 3, chassis tail gas leaving air control valve 4 is connected with inside extending tube 16 with tail gas escape pipe 5, inside extending tube overcoat has some regular hexagon nut type silico briquettes 17.Chassis of reducing furnace 1, body of heater 11, reduction furnace take over a business 19 respectively by chassis entrance of cooling water 8, body of heater cooling water inlet 9, take over a business cooling water inlet 18 and pass into water coolant, and chassis cooling water outlet 7, body of heater cooling water outlet 10, take over a business cooling water outlet 20 and be connected with the hot system of need respectively.
The polycrystalline silicon reducing furnace that connects inside extending tubes taking 15 pairs of excellent tail gas outlets is as example, and reduction furnace is taken over a business the dome-type for atresia, chassis distributing equably 15 pairs of electrodes, 90 ventages and 1 center tail gas relief outlet; The inside extending tube of tail gas outlet connecting external diameter 130mm vertically stretches in stove, height higher than silicon rod 100 ?200mm, the some length of side 140mm of the outer closely socket of inside extending tube, height 200 ?the regular hexagon nut type silico briquette of 300mm, silico briquette is by lower and upper stackingly wrap up inside extending tube completely; Chassis of reducing furnace powers on very 1 layer by arranged in regular hexagon shape; The center of adjacent three electrodes of arranging with equilateral triangle on chassis of reducing furnace is provided with a ventage, the surrounding of each root electrode six ventages of evenly arranging, and six ventages are positioned at the regular hexagon summit place centered by this electrode.
The spacing of above-mentioned adjacent two electrodes be preferably 200 ?400mm, chassis of reducing furnace and the diameter of taking over a business be preferably 1700 ?3500mm.
Embodiment 1: the operating process 1(of Novel polysilicon reduction furnace is taking 15 pairs of excellent polycrystalline silicon reducing furnaces as example):
(1) open chassis gas mixture air intake control valve 2, chassis tail gas leaving air control valve 4;
(2) take over a business to pass into water coolant at body of heater, chassis of reducing furnace, the reduction furnace of reduction furnace simultaneously;
(3) by the SiHCl purifying
3with H
2mix by a certain percentage, then spray into reduction furnace from gas mixture inlet pipe 3 through the inlet mouth 6 on chassis gas mixture air intake control valve 2 and chassis;
(4) power supply system that starts reduction furnace heats silicon core, and keeps the temperature of silicon core at 1150 DEG C, and reduction furnace internal pressure is 0.8Mpa;
(5) when the temperature of silicon wicking surface reaches SiHCl
3with H
2reaction condition time, gas mixture starts to occur reduction reaction, and reacted silicon will deposit on silicon core;
(6) reacted tail gas is discharged from tail gas escape pipe 5 through inside extending tube 16, chassis tail gas leaving air control valve 4, and the temperature of tail gas is controlled at 550 DEG C ± 20;
(7) until the growth in thickness of silicon core, stop power supply when above to 200mm, and by the time silicon core cooling after, taking-up silicon core;
Embodiment 2: the operating process 2(of Novel polysilicon reduction furnace is taking 15 pairs of excellent polycrystalline silicon reducing furnaces as example):
(1) open chassis gas mixture air intake control valve 2, chassis tail gas leaving air control valve 4;
(2) take over a business to pass into water coolant at body of heater, chassis of reducing furnace, the reduction furnace of reduction furnace simultaneously;
(3) by the SiHCl purifying
3with H
2mix by a certain percentage, then spray into reduction furnace from gas mixture inlet pipe 3 through the inlet mouth 6 on chassis gas mixture air intake control valve 2 and chassis;
(4) power supply system that starts reduction furnace heats silicon core, and keeps the temperature of silicon core at 1150 DEG C, and reduction furnace internal pressure is 0.8Mpa;
(5) when the temperature of silicon wicking surface reaches SiHCl
3with H
2reaction condition time, gas mixture starts to occur reduction reaction, and reacted silicon will deposit on silicon core;
(6) reacted tail gas is discharged from tail gas escape pipe 5 through inside extending tube 16, chassis tail gas leaving air control valve 4, and the temperature of tail gas is controlled at 450 DEG C ± 20;
(7) until the growth in thickness of silicon core, stop power supply when above to 200mm, and by the time silicon core cooling after, taking-up silicon core.
In embodiment 1,2, tail gas outlet in chassis connects inside extending tube, can avoid mixing and make short circuit leave with rage, ensures gas mixture fully reaction in reduction furnace, and the turnover ratio that improves gas mixture can reach 15%.Inside extending tube Forced Mixing gas is through upper of furnace body space, gas mixture is from bottom to top uniformly distributed in stove, can eliminate the dead band in reduction furnace, strengthen flowing of the interior gas mixture of reduction furnace, ensure that reduction temperature field in furnace and velocity field distribute more even, make each local growth velocity balance of silicon rod, reduced the generation of " popcorn effect ", improved the quality of polysilicon product.Moreover, the regular hexagon nut type silico briquette of the outer socket of inside extending tube can additionally increase output 5% ?8% of polysilicon.
The above example is only to absolutely prove the present invention and the preferred embodiment of lifting, and protection scope of the present invention is not limited to this.What those skilled in the art did on basis of the present invention is equal to alternative or conversion, all within protection scope of the present invention.Protection scope of the present invention is as the criterion with claims.
Claims (6)
1. tail gas outlet connects a polycrystalline silicon reducing furnace for inside extending tube, it is characterized in that reduction furnace takes over a business the dome-type for atresia, and tail gas outlet in center connects inside extending tube vertically to be stretched in stove, and inside extending tube height is higher than silicon rod, and inside extending tube is socketed regular hexagon shape silico briquette outward; The chassis of reducing furnace very one deck that powers on, by arranged in regular hexagon shape.
2. reduction furnace as claimed in claim 1, is characterized in that regular hexagon shape silico briquette internal diameter is slightly larger than inside extending tube external diameter, is inserted in to facilitate; The orthohexagonal length of side be inside extending tube external diameter 1.05 ?1.2 times.
3. reduction furnace as claimed in claim 1, is characterized in that regular hexagon shape silico briquette is regular hexagon nut type silico briquette, by lower and upper stacking inside extending tube is wrapped up completely.
4. reduction furnace as claimed in claim 1, the center that it is characterized in that adjacent three electrodes of arranging with equilateral triangle on chassis of reducing furnace is provided with a ventage, the surrounding of each root electrode six ventages of evenly arranging, and six ventages are positioned at the regular hexagon summit place centered by this electrode.
5. reduction furnace method of attachment as claimed in claim 1, it is characterized in that body of heater is fixed on chassis of reducing furnace and sealing, reduction furnace takes over a business to be fixed on body of heater and sealing, silicon core is connected and seals with chassis electrode by graphite chuck, silicon core and electrode are joined by silicon rod between two at top, chassis electrode is fixed to chassis of reducing furnace and sealing, and be connected with power supply system, chassis gas mixture air intake control valve is connected with chassis ventage with gas mixture inlet pipe, chassis tail gas leaving air control valve is connected with inside extending tube with tail gas escape pipe, inside extending tube overcoat has some regular hexagon nut type silico briquettes.
6. reduction furnace method of attachment as claimed in claim 5, is characterized in that chassis of reducing furnace is connected with chassis entrance of cooling water, chassis cooling water outlet; Body of heater is connected with body of heater cooling water inlet and body of heater cooling water outlet; Reduction furnace is taken over a business to be connected with cooling water inlet, is taken over a business cooling water outlet.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410101215.2A CN103880009B (en) | 2014-03-18 | 2014-03-18 | A kind of offgas outlet connects polycrystalline silicon reducing furnace and the method for attachment of inside extending tube |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410101215.2A CN103880009B (en) | 2014-03-18 | 2014-03-18 | A kind of offgas outlet connects polycrystalline silicon reducing furnace and the method for attachment of inside extending tube |
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| Publication Number | Publication Date |
|---|---|
| CN103880009A true CN103880009A (en) | 2014-06-25 |
| CN103880009B CN103880009B (en) | 2016-01-13 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110451511A (en) * | 2019-08-26 | 2019-11-15 | 洛阳中硅高科技有限公司 | Polycrystalline silicon reducing furnace and its open furnace method |
| CN114671439A (en) * | 2022-03-18 | 2022-06-28 | 新疆大全新能源股份有限公司 | Reduction furnace chassis cooling structure |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201105995Y (en) * | 2007-12-19 | 2008-08-27 | 王存惠 | Modified polycrystalline silicon reducing furnace |
| CN101973551A (en) * | 2010-11-12 | 2011-02-16 | 天津大学 | Polysilicon reducing furnace |
| CN102030330A (en) * | 2010-11-12 | 2011-04-27 | 天津大学 | Polysilicon reduction furnace with outlet gas collector |
-
2014
- 2014-03-18 CN CN201410101215.2A patent/CN103880009B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201105995Y (en) * | 2007-12-19 | 2008-08-27 | 王存惠 | Modified polycrystalline silicon reducing furnace |
| CN101973551A (en) * | 2010-11-12 | 2011-02-16 | 天津大学 | Polysilicon reducing furnace |
| CN102030330A (en) * | 2010-11-12 | 2011-04-27 | 天津大学 | Polysilicon reduction furnace with outlet gas collector |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110451511A (en) * | 2019-08-26 | 2019-11-15 | 洛阳中硅高科技有限公司 | Polycrystalline silicon reducing furnace and its open furnace method |
| CN114671439A (en) * | 2022-03-18 | 2022-06-28 | 新疆大全新能源股份有限公司 | Reduction furnace chassis cooling structure |
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| CN103880009B (en) | 2016-01-13 |
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