CN102936013A - Polycrystalline silicon reduction furnace - Google Patents
Polycrystalline silicon reduction furnace Download PDFInfo
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- CN102936013A CN102936013A CN2012104695195A CN201210469519A CN102936013A CN 102936013 A CN102936013 A CN 102936013A CN 2012104695195 A CN2012104695195 A CN 2012104695195A CN 201210469519 A CN201210469519 A CN 201210469519A CN 102936013 A CN102936013 A CN 102936013A
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Abstract
The invention discloses a polycrystalline silicon reduction furnace which comprises a base plate, a furnace body, thirty counter electrodes, an air inlet system and an air outlet system. The furnace body is connected onto the base plate, a reaction chamber is defined between the furnace body and the base plate, the thirty counter electrodes are arranged on the base plate and respectively distributed at the position from a first circle to a firth circle, the five circles from the first circle to the fifth circle are five concentric regular hexagons with the center of the base plate as a center, the five circles are increased sequentially from inside to outside, the air inlet system comprises a plurality of nozzles arranged in the middle of the base plate, the air outlet system comprises a plurality of air outlets, and the air outlets are arranged on the base plate and located between the fifth circle and the base plate. The polycrystalline silicon reduction furnace can utilize heat energy reasonably, simultaneously can prevent too much heat from being taken away by the inner side wall of the furnace body, and can reduce heat loss.
Description
Technical field
The present invention relates to technical field of polysilicon production, particularly relate to a kind of polycrystalline silicon reducing furnace.
Background technology
Polycrystalline silicon reducing furnace is the nucleus equipment of output the finished product in production of polysilicon, is also the key link of decision systems production capacity, energy consumption.Therefore, the Design and manufacture of polycrystalline silicon reducing furnace, directly have influence on quality, output and the production cost of product.Under impact along with global economic crisis, the price continuous decrease of polysilicon, industrial profit is constantly compressed, and market competition is growing more intense.Therefore, effectively reducing the polysilicon energy consumption, improve the quality of products, enhance productivity, is the major issue that current production of polysilicon enterprise need to solve.
Produce at present polysilicon and mainly adopt " improved Siemens ", usually by the trichlorosilane (SiHCl of certain proportioning
3) and hydrogen (H
2) gas mixture sprays into from bottom air inlet, and the vapour phase reduction reaction occurs in reduction furnace, the silicon wicking surface of silicon (Si) Direct precipitation in stove that reaction generates, along with reaction continue carry out, the continuous growth of silicon rod finally reaches product requirement.Because need to maintaining 1050 ℃-1100 ℃, produced by the inner silicon core of reduction furnace, outside is carried out cooling with cooling jacket, therefore, use 12 pairs of rods, the 18 pairs of reduction furnaces such as rod to produce polysilicon reduction energy consumptions large, production cost is high, be not suitable with the requirement of current fierce market competition, the appearance of a kind of Novel reducing furnace that can be energy-saving and cost-reducing of active demand.
Summary of the invention
The present invention is intended at least one of solve the problems of the technologies described above.
For this reason, one object of the present invention is to propose a kind of polycrystalline silicon reducing furnace that can reduce energy consumption and can improve output.
Polycrystalline silicon reducing furnace according to the embodiment of the present invention comprises: chassis and body of heater, and described body of heater is connected on described chassis and between described body of heater and described chassis and limits reaction chamber; 30 pairs of electrodes, described 30 pairs of electrodes are located on described chassis and are distributed in respectively the first to the 5th circle above, and the described first to the 5th circle is centered by described center chassis and five concentric regular hexagons that increase successively from inside to outside; Inlet system, described inlet system comprises a plurality of nozzles that are located at middle part, described chassis; And exhaust system, described exhaust system comprises a plurality of venting ports, described venting port is located on described chassis and between described the 5th circle and described chassis.
According to the polycrystalline silicon reducing furnace of the embodiment of the present invention, 30 pairs of electrodes are located on chassis and are distributed in respectively the first to the 5th circle above, thus, can rationally utilize heat energy, also can avoid the furnace body inside cornice to walk too much heat, can reduce thermal losses simultaneously.
In addition, polycrystalline silicon reducing furnace according to the above embodiment of the present invention can also have following additional technical characterictic:
Polycrystalline silicon reducing furnace according to an embodiment of the invention, be distributed with an electrode on every limit of described first lap, be distributed with an electrode on every limit of described the second circle, six electrodes on described first lap are corresponding to form six pairs of electrodes one by one with six electrodes on described the second circle.
Polycrystalline silicon reducing furnace according to an embodiment of the invention, be distributed with two electrodes on every limit of described the 3rd circle, be distributed with two electrodes on every limit of described the 4th circle, 12 electrodes on described the 3rd circle are corresponding to form 12 pairs of electrodes one by one with 12 electrodes on described the 4th circle.
Polycrystalline silicon reducing furnace according to an embodiment of the invention is distributed with every two adjacent electrodes on four electrodes and the 5th circle and forms pair of electrodes to form 12 pairs of electrodes on every limit of described the 5th circle.
Polycrystalline silicon reducing furnace according to an embodiment of the invention, the corresponding sides of the described first to the 5th circle are parallel to each other.
Advantageously, polycrystalline silicon reducing furnace according to an embodiment of the invention, described a plurality of nozzle is distributed in respectively on described center chassis place, the 4th circle, the 6th circle and the 7th circle, the the described the 6th and the 7th circle is centered by described center chassis and two concentric regular hexagons that increase successively from inside to outside, wherein said the 6th circle is between the first and second circles, and described the 7th circle is between described the third and fourth circle.
Advantageously, polycrystalline silicon reducing furnace according to an embodiment of the invention, the corresponding sides of the described first to the 7th circle are parallel to each other.
Further, polycrystalline silicon reducing furnace according to an embodiment of the invention, the quantity of described a plurality of nozzles is nineteen, wherein on described the 4th circle, be distributed with six nozzles, be distributed with six each and every one nozzles on described the 6th circle, be distributed with six nozzles on described the 7th circle, wherein the electrode on the nozzle on the arbitrary circle in the 4th circle, the 6th circle and the 7th circle and the circle adjacent with it is along circumferential staggered arrangement.
Polycrystalline silicon reducing furnace according to an embodiment of the invention, be formed with air chamber on described chassis, described nineteen nozzle is connected with described air chamber respectively, and described inlet system also comprises: the air inlet endless tube, and described air inlet endless tube is positioned at below, described chassis and is connected with external air source; Six inlet pipe, described six inlet pipe are connected with described air chamber with described air inlet endless tube respectively.
Polycrystalline silicon reducing furnace according to an embodiment of the invention, be formed with the first cooling chamber be positioned at above described air chamber in described chassis, and described the first cooling chamber has the first cooling medium inlet and a plurality of the first heat-eliminating medium outlet, described the first cooling medium inlet is positioned at the central authorities on described chassis, and described a plurality of the first heat-eliminating medium outlet and the corresponding setting one by one of described a plurality of venting ports, each described first heat-eliminating medium outlet is connected with the first cooling tube and each described venting port is connected with offgas duct, and described the first cooling tube is set on described offgas duct.
Polycrystalline silicon reducing furnace according to an embodiment of the invention, the quantity of described a plurality of venting ports is three to 12 and is distributed in and take on the circumference that the center on described chassis is the center of circle.
Polycrystalline silicon reducing furnace according to an embodiment of the invention, be provided with the second cooling chamber and described the second cooling chamber in described body of heater and be connected with the second cooling medium inlet and the outlet of the second heat-eliminating medium, described the second cooling medium inlet is positioned at the bottom of described body of heater and the top that described the second heat-eliminating medium outlet is positioned at described body of heater, in described the second cooling chamber, be provided with a plurality of every stream baffle plate, described a plurality of every stream baffle plate in described the second cooling chamber, around described reaction chamber, distribute in the shape of a spiral from the bottom to top.
Polycrystalline silicon reducing furnace according to an embodiment of the invention, described body of heater comprises the cylindrical shell that is positioned at bottom and the end socket that is located at described cylinder top, described end socket is the hollow hemisphere.
Polycrystalline silicon reducing furnace according to an embodiment of the invention, also be provided with a plurality of sight glasss on described body of heater, described a plurality of sight glasss are uniformly distributed into many rows and described a plurality of sight glass circumferentially being uniformly distributed along described cylindrical shell on the short transverse of described cylindrical shell.
Additional aspect of the present invention and advantage part in the following description provide, and part will become obviously from the following description, or recognize by practice of the present invention.
The accompanying drawing explanation
Above-mentioned and/or additional aspect of the present invention and advantage are from obviously and easily understanding becoming the description of embodiment in conjunction with following accompanying drawing, wherein:
Fig. 1 is the schematic diagram of polycrystalline silicon reducing furnace according to an embodiment of the invention; With
Fig. 2 is the schematic diagram of polycrystalline silicon reducing furnace according to another embodiment of the present invention.
Embodiment
Below describe embodiments of the invention in detail, the example of described embodiment is shown in the drawings, and wherein same or similar label means same or similar element or the element with identical or similar functions from start to finish.Be exemplary below by the embodiment be described with reference to the drawings, only for explaining the present invention, and can not be interpreted as limitation of the present invention.
In description of the invention, it will be appreciated that, term " " center ", " vertically ", " laterally ", " on ", D score, " front ", " afterwards ", " left side ", " right side ", " vertically ", " level ", " top ", " end " " interior ", orientation or the position relationship of indications such as " outward " are based on orientation shown in the drawings or position relationship, only the present invention for convenience of description and simplified characterization, rather than device or the element of indication or hint indication must have specific orientation, with specific orientation structure and operation, therefore can not be interpreted as limitation of the present invention.
In addition, term " first ", " second " be only for describing purpose, and can not be interpreted as indication or hint relative importance.
In description of the invention, it should be noted that, unless otherwise clearly defined and limited, term " installation ", " being connected ", " connection " should be done broad understanding, for example, can be to be fixedly connected with, connect integratedly, can be also to removably connect; Can be mechanical connection or electrical connection, can be also the connection of two element internals; Can be directly to be connected, also can indirectly be connected by intermediary, for the ordinary skill in the art, can understand as the case may be the concrete meaning of above-mentioned term.
Describe the polycrystalline silicon reducing furnace according to the embodiment of the present invention in detail below with reference to accompanying drawing.
As shown in Figure 1-2, the polycrystalline silicon reducing furnace according to the embodiment of the present invention comprises: chassis 10, body of heater 20, three ten pairs of electrodes 30, inlet system and exhaust system.
Specifically, body of heater 20 is connected on chassis 10 and between body of heater 20 and chassis 10 and limits reaction chamber 1020.
30 pairs of electrodes 30 are located on chassis 10, and are distributed in respectively on first lap C1, the second circle C2, the 3rd circle C3, the 4th circle C4 and the 5th circle C5.The first to the 5th circle is centered by 10 centers, chassis and five concentric regular hexagons that increase successively from inside to outside.
Described inlet system comprises a plurality of nozzles 41 that are located at 10 middle parts, chassis.
Described exhaust system comprises a plurality of venting ports 51, and venting port 51 is located on chassis 10 and the 5th and encloses between the periphery edge on C5 and chassis 10.
Polycrystalline silicon reducing furnace according to the embodiment of the present invention, 30 pairs of electrodes 30 are located on chassis 10 and are distributed in respectively on first lap C1, the second circle C2, the 3rd circle C3, the 4th circle C4 and the 5th circle C5, thus, can rationally utilize heat energy, also can avoid the furnace body inside cornice to walk too much heat, can reduce thermal losses simultaneously.
As shown in Figure 2, according to one embodiment of the invention, be distributed with an electrode 30 on every limit of first lap C1, be distributed with an electrode 30 on every limit of the second circle C2.Six electrodes 30 on first lap C1 are corresponding to form six pairs of electrodes one by one with six electrodes 30 on the second circle C2.Between two pairs of adjacent electrodes, can connect by the battery lead plate (not shown).
Be distributed with two electrodes 30 on every limit of the 3rd circle C3, on every limit of the 4th circle C4, be distributed with two electrodes 30.12 electrodes 30 on the 3rd circle C3 are corresponding to form 12 pairs of electrodes one by one with 12 electrodes on the 4th circle C4.Between two pairs of adjacent electrodes, can connect by the battery lead plate (not shown).
Be distributed with four electrodes 30 on every limit of the 5th circle C5, and upper every two the adjacent electrodes of the 5th circle C5 form pair of electrodes to form 12 pairs of electrodes.Specifically, as shown in Figure 2, be distributed with four electrodes 30 on a limit of the 5th circle C5 the top (direction made progress as shown in Figure 2), the electrode 30 of left margin that closes on the 5th circle uppermost limit of C5 of take is starting point, in the counterclockwise direction the electrode 30 on the 5th circle C5 is numbered, for any odd number N(N<24), N electrode and N+1 electrode on the 5th circle C5 form pair of electrodes.Between two pairs of adjacent electrodes, can connect by the battery lead plate (not shown).Thus, the control to electrode 30 can be simplified, and heat energy can be farthest rationally utilized.
Certainly, above-described embodiment is only a specific embodiment of the present invention, and the electrode 30 on first lap to the four circles of the present invention can also have other distribution form.For example, be distributed with an electrode 30 on every limit of first lap C1, and the 30 formation pair of electrodes of every adjacent two electrodes on first lap C1, for form three pairs of electrodes on first lap C1; Be distributed with an electrode 30 on every limit of the second circle C2, and the 30 formation pair of electrodes of every adjacent two electrodes on the second circle C2, for form three pairs of electrodes on the second circle C2; Be distributed with two electrodes 30 on every limit of the 3rd circle C3, and the 30 formation pair of electrodes of every adjacent two electrodes on the 3rd circle C3, on the 3rd circle C3, forming six pairs of electrodes; Be distributed with two electrodes 30 on every limit of the 4th circle C4, and the 30 formation pair of electrodes of every adjacent two electrodes on the 4th circle C4, on the 4th circle C4, forming six pairs of electrodes.
In addition, the distribution form of the electrode on above-mentioned first lap to the four circles and the array configuration that adopts above-mentioned distribution of electrodes form, all, in protection scope of the present invention, this is understandable for those of ordinary skill in the art.
According to some embodiments of the invention, as shown in Figure 2, the corresponding sides of first lap C1, the second circle C2, the 3rd circle C3, the 4th circle C4 and the 5th circle C5 are parallel to each other.Thus, can make and designs simplification rationally distributed according to the polycrystalline silicon reducing furnace of the embodiment of the present invention.
According to an example of the present invention, a plurality of nozzles 41 are distributed in respectively on 10 centers, chassis and the 4th circle C4, the 6th circle C6 and the 7th circle C7.The 6th circle C6 and the 7th circle C7 are centered by 10De center, chassis and two concentric regular hexagons that increase successively from inside to outside.Wherein the 6th circle C6 is between first lap C1 and the second circle C2, and the 7th circle C7 is between the 3rd circle C3 and the 4th circle C4.Thus, can make process gas be uniformly distributed in reaction chamber 1020, can improve single furnace output.
Advantageously, the concrete example according to the present invention, the corresponding sides of first lap C1, the second circle C2, the 3rd circle C3, the 4th circle C4, the 5th circle C5, the 6th circle C6 and the 7th circle C7 are parallel to each other.Thus, can make according to the rationally distributed and further simplified construction of the polycrystalline silicon reducing furnace of the embodiment of the present invention.
Advantageously, some examples according to the present invention, the quantity of a plurality of nozzles 41 is nineteen.Wherein on the 4th circle C4, be distributed with six nozzles 41, on the 6th circle C6, be distributed with six nozzles 41, on the 7th circle C7, be distributed with six nozzles 41.Wherein the electrode 30 on the nozzle 41 on the 4th circle C4, the 6th circle C6 and arbitrary circle of the 7th circle in C7 and the circle adjacent with it is along circumferential staggered arrangement.Thus, can make the layout of nozzle 41 more reasonable, can effectively match with 30 pairs of electrodes.
Further, be formed with air chamber 11 on chassis 10, nineteen nozzle 41 is connected with air chamber 11 respectively, and described inlet system also comprises: air inlet endless tube 42 and six inlet pipe 43.
Specifically, air inlet endless tube 42 is positioned at 10 belows, chassis and is connected with external air source.
Six inlet pipe 43 are connected with air chamber 11 with air inlet endless tube 42 respectively.Thus, can make the air input of each nozzle 41 be consistent, thereby can guarantee that the interior air-flow of reaction chamber 1020 is evenly smooth.
As shown in Figure 1, according to one embodiment of the invention, be formed with the first cooling chamber 12 be positioned at above air chamber 11 in chassis 10, and the first cooling chamber 12 has the first cooling medium inlet 121 and a plurality of the first heat-eliminating medium outlet 122, the first cooling medium inlet 121 is positioned at the central authorities on chassis 10, and a plurality of the first heat-eliminating medium outlets 122 and the corresponding setting one by one of a plurality of venting ports 51, each first heat-eliminating medium outlet 122 is connected with the first cooling tube and each venting port 51 is connected with offgas duct, and described the first cooling tube is set on described offgas duct.Thus, can simplify the design of polycrystalline silicon reducing furnace and can improve working condition, can guarantee safety in production.
According to one embodiment of the invention, the quantity of a plurality of venting ports 51 is three to 12 and is distributed in and take on the circumference that 10De center, chassis is the center of circle, and preferably, the quantity of a plurality of venting ports 51 is six, thus, can make reaction end gas discharge in time.Further, as shown in Figure 2, a plurality of venting ports 51 are located on the circumference between the inwall of the 5th circle C5 and reaction chamber 1020.Form thermofin between inwall for the electrode 30 on the 5th circle C5 and reaction chamber 1020, thereby avoid body of heater 20 to take away the interior too much heat of reaction chamber 1020, reduced the thermal losses of reduction furnace, energy-conserving and environment-protective.
The example according to the present invention, be provided with the second cooling chamber 22 and the second cooling chamber 22 in body of heater 20 and be connected with the second cooling medium inlet 221 and the second heat-eliminating medium outlet 222, the second cooling medium inlet 221 is positioned at the bottom of body of heater 20 and the top that the second heat-eliminating medium outlet 222 is positioned at body of heater 20, in the second cooling chamber 22, be provided with a plurality of every stream baffle plate 223, a plurality of every stream baffle plate 223 in the second cooling chamber 22, around reaction chamber 1020, distribute in the shape of a spiral from the bottom to top.Thus, working condition can be improved, safety in production can be guaranteed.
According to some embodiments of the invention, body of heater 20 comprises the cylindrical shell 201 that is positioned at bottom and the end socket 202 that is located at cylindrical shell 201 tops, and end socket 202 is the hollow hemisphere.Thus, can reduce the rising resistance of upstream at reaction chamber 1020 tops.
Advantageously, according to one embodiment of the invention, as shown in Figure 1, also be provided with a plurality of sight glasss 60 on body of heater 20, a plurality of sight glasss 60 are uniformly distributed into many rows and a plurality of sight glass 60 circumferentially being uniformly distributed along cylindrical shell 201 on the short transverse of cylindrical shell 201.Thus, can observe in time the situation in described reaction chamber.
According to the polycrystalline silicon reducing furnace of the embodiment of the present invention, 30 pairs of electrodes 30 are being distributed in respectively on the first to the 5th circle and are being arranged to respectively six pairs, 12 pairs, 12 pairs electrodes 30.The layout of this electrode 30 is conducive to maximize rationally utilizes heat energy, avoids the cooling wall of stove cylinder inboard to take away too much heat simultaneously, reduces thermal losses.Be equipped with six nozzles 41 on each on the 4th circle, the 6th circle and the 7th circle, evenly be provided with six venting ports 51 along take on the circumference that 10De center, chassis is the center of circle, central air outlet has been cancelled in such design, avoid near the flow dead caused owing to building the pressure central air outlet, improved the production efficiency of reaction chamber 1020 interior lower regions.The structure of using outer ring to give vent to anger, while making the interior airflow circulation of reduction furnace, directly discharge from outer ring, avoids byproduct of reaction to get back to central air-flow rising area, causes the material back mixing.Show that by analog calculation the layout on chassis 10 has following advantage: (1) is because every silicon rod (except outmost turns is the silicon rod on the 5th circle C5) has 3 corresponding equidistant air inlet sources substantially, the reduction furnace flow field can be uniformly distributed, and is conducive to silicon rod and evenly grows; (2) the silicon rod spacing is in full accord, and every silicon rod has corresponding 3 equidistant radiant heat source, and the reduction furnace thermal field is evenly distributed; (3) give vent to anger and make hot gas walk outside in outer ring, makes in reduction furnace the gas field energy enough maximize and rationally utilize heat energy, avoids the cooling wall of stove cylinder inboard to take away too much heat simultaneously, reduces thermal losses.Simultaneously, this optimization design makes the manufacturing cost of reduction furnace effectively reduce, and takes up an area space little, be conducive on a large scale for the production of.
The end socket 202 on body of heater 10 tops is hemispherical head.Hemispherical head stressed good, spherical shell stress is little, with cylindrical shell 201, compares, and the more other forms of end socket of thickness is attenuate suitably.Advanced analog calculation, the upstream of the bottom of dome head reduces at the rising resistance at top, obviously increase in height 2400-3200mm left and right gas speed, be conducive to solve the serious problem of silicon rod top cauliflower, the quality of silicon rod bridging part is had to certain improvement effect; This feature shows more obvious on the inner ring silicon rod, and the general ellipsoidal head of silicon rod surface gas speed ratio has the lifting of 10% left and right.
Polycrystalline silicon reducing furnace according to the embodiment of the present invention, scantlings of the structure by the chassis 10 to polycrystalline silicon reducing furnace and body of heater 20, and after the distribution of electrode 30, inlet mouth 41 and venting hole 51 is optimized design, per kilogram polysilicon energy consumption can reduce 15%-25%, single furnace output can reach the 6.5-8 ton, can effectively reduce the production of polysilicon cost.
In the description of this specification sheets, the description of reference term " embodiment ", " some embodiment ", " example ", " concrete example " or " some examples " etc. means to be contained at least one embodiment of the present invention or example in conjunction with specific features, structure, material or the characteristics of this embodiment or example description.In this manual, the schematic statement of above-mentioned term not necessarily referred to identical embodiment or example.And the specific features of description, structure, material or characteristics can be with suitable mode combinations in any one or more embodiment or example.
Although illustrated and described embodiments of the invention, those having ordinary skill in the art will appreciate that: in the situation that do not break away from principle of the present invention and aim can be carried out multiple variation, modification, replacement and modification to these embodiment, scope of the present invention is limited by claim and equivalent thereof.
Claims (14)
1. a polycrystalline silicon reducing furnace, is characterized in that, comprising:
Chassis and body of heater, described body of heater is connected on described chassis and between described body of heater and described chassis and limits reaction chamber;
30 pairs of electrodes, described 30 pairs of electrodes are located on described chassis and are distributed in respectively the first to the 5th circle above, and the described first to the 5th circle is centered by described center chassis and five concentric regular hexagons that increase successively from inside to outside;
Inlet system, described inlet system comprises a plurality of nozzles that are located at middle part, described chassis; With
Exhaust system, described exhaust system comprises a plurality of venting ports, described venting port is located on described chassis and between the periphery edge on described the 5th circle and described chassis.
2. polycrystalline silicon reducing furnace according to claim 1, it is characterized in that, be distributed with an electrode on every limit of described first lap, be distributed with an electrode on every limit of described the second circle, six electrodes on described first lap are corresponding to form six pairs of electrodes one by one with six electrodes on described the second circle.
3. polycrystalline silicon reducing furnace according to claim 1, it is characterized in that, be distributed with two electrodes on every limit of described the 3rd circle, be distributed with two electrodes on every limit of described the 4th circle, 12 electrodes on described the 3rd circle are corresponding to form 12 pairs of electrodes one by one with 12 electrodes on described the 4th circle.
4. polycrystalline silicon reducing furnace according to claim 1, is characterized in that, is distributed with every two adjacent electrodes on four electrodes and the 5th circle and forms pair of electrodes to form 12 pairs of electrodes on every limit of described the 5th circle.
5. according to the described polycrystalline silicon reducing furnace of any one in claim 1-4, it is characterized in that, the corresponding sides of the described first to the 5th circle are parallel to each other.
6. polycrystalline silicon reducing furnace according to claim 1, it is characterized in that, described a plurality of nozzle is distributed in respectively on described center chassis place, the 4th circle, the 6th circle and the 7th circle, the the described the 6th and the 7th circle is centered by described center chassis and two concentric regular hexagons that increase successively from inside to outside, wherein said the 6th circle is between the first and second circles, and described the 7th circle is between described the third and fourth circle.
7. polycrystalline silicon reducing furnace according to claim 6, is characterized in that, the corresponding sides of the described first to the 7th circle are parallel to each other.
8. polycrystalline silicon reducing furnace according to claim 6, it is characterized in that, the quantity of described a plurality of nozzles is nineteen, wherein on described the 4th circle, be distributed with six nozzles, be distributed with six each and every one nozzles on described the 6th circle, be distributed with six nozzles on described the 7th circle, wherein the electrode on the nozzle on the arbitrary circle in the 4th circle, the 6th circle and the 7th circle and the circle adjacent with it is along circumferential staggered arrangement.
9. polycrystalline silicon reducing furnace according to claim 8, is characterized in that, on described chassis, is formed with air chamber, and described nineteen nozzle is connected with described air chamber respectively, and described inlet system also comprises:
The air inlet endless tube, described air inlet endless tube is positioned at below, described chassis and is connected with external air source;
Six inlet pipe, described six inlet pipe are connected with described air chamber with described air inlet endless tube respectively.
10. polycrystalline silicon reducing furnace according to claim 9, it is characterized in that, be formed with the first cooling chamber be positioned at above described air chamber in described chassis, and described the first cooling chamber has the first cooling medium inlet and a plurality of the first heat-eliminating medium outlet, described the first cooling medium inlet is positioned at the central authorities on described chassis, and described a plurality of the first heat-eliminating medium outlet and the corresponding setting one by one of described a plurality of venting ports, each described first heat-eliminating medium outlet is connected with the first cooling tube and each described venting port is connected with offgas duct, described the first cooling tube is set on described offgas duct.
11. polycrystalline silicon reducing furnace according to claim 1, is characterized in that, the quantity of described a plurality of venting ports is three to 12 and is distributed in and take on the circumference that the center on described chassis is the center of circle.
12. polycrystalline silicon reducing furnace according to claim 1, it is characterized in that, be provided with the second cooling chamber and described the second cooling chamber in described body of heater and be connected with the second cooling medium inlet and the outlet of the second heat-eliminating medium, described the second cooling medium inlet is positioned at the bottom of described body of heater and the top that described the second heat-eliminating medium outlet is positioned at described body of heater, in described the second cooling chamber, be provided with a plurality of every stream baffle plate, described a plurality of every stream baffle plate in described the second cooling chamber, around described reaction chamber, distribute in the shape of a spiral from the bottom to top.
13. polycrystalline silicon reducing furnace according to claim 1, is characterized in that, described body of heater comprises the cylindrical shell that is positioned at bottom and the end socket that is located at described cylinder top, and described end socket is the hollow hemisphere.
14. polycrystalline silicon reducing furnace according to claim 13, it is characterized in that, also be provided with a plurality of sight glasss on described body of heater, described a plurality of sight glasss are uniformly distributed into many rows and described a plurality of sight glass circumferentially being uniformly distributed along described cylindrical shell on the short transverse of described cylindrical shell.
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| CN104724709A (en) * | 2015-03-27 | 2015-06-24 | 中国恩菲工程技术有限公司 | Chassis assembly for polycrystalline silicon reduction furnace |
| CN108557824A (en) * | 2017-04-01 | 2018-09-21 | 上海韵申新能源科技有限公司 | A kind of gas phase controllable type polycrystalline silicon reducing furnace |
| CN110255565A (en) * | 2019-07-05 | 2019-09-20 | 江苏双良新能源装备有限公司 | A kind of large size chassis of reducing furnace |
| CN112960674A (en) * | 2021-03-17 | 2021-06-15 | 中国恩菲工程技术有限公司 | Chassis and chassis assembly of polycrystalline silicon reduction furnace and reduction furnace |
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| CN104724709A (en) * | 2015-03-27 | 2015-06-24 | 中国恩菲工程技术有限公司 | Chassis assembly for polycrystalline silicon reduction furnace |
| CN108557824A (en) * | 2017-04-01 | 2018-09-21 | 上海韵申新能源科技有限公司 | A kind of gas phase controllable type polycrystalline silicon reducing furnace |
| CN108557824B (en) * | 2017-04-01 | 2024-03-29 | 上海韵申新能源科技有限公司 | Gas-phase controllable polysilicon reduction furnace |
| CN110255565A (en) * | 2019-07-05 | 2019-09-20 | 江苏双良新能源装备有限公司 | A kind of large size chassis of reducing furnace |
| CN112960674A (en) * | 2021-03-17 | 2021-06-15 | 中国恩菲工程技术有限公司 | Chassis and chassis assembly of polycrystalline silicon reduction furnace and reduction furnace |
| CN112960674B (en) * | 2021-03-17 | 2022-11-01 | 中国恩菲工程技术有限公司 | Chassis and chassis assembly of polycrystalline silicon reduction furnace and reduction furnace |
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Application publication date: 20130220 |