CN106276914B - Polycrystalline silicon reducing furnace - Google Patents
Polycrystalline silicon reducing furnace Download PDFInfo
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- CN106276914B CN106276914B CN201610846744.4A CN201610846744A CN106276914B CN 106276914 B CN106276914 B CN 106276914B CN 201610846744 A CN201610846744 A CN 201610846744A CN 106276914 B CN106276914 B CN 106276914B
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P20/00—Technologies relating to chemical industry
- Y02P20/10—Process efficiency
Abstract
The invention discloses a kind of polycrystalline silicon reducing furnaces, including furnace body, chassis assembly, gas handling system and outlet system, chassis assembly includes chassis body, electrode, inlet-end manifold and outlet end pipe, furnace body and chassis body limit reaction chamber, multiple electrodes are located in chassis body and provide installation foundation for deposition vehicle silicon core, multiple electrodes are arranged in multi-turn in chassis body, every circle electrode spaced set and center is located on the central axis of chassis body, multi-turn electrode is arranged along the spaced radial of chassis body, multiple inlet-end manifolds are located in chassis body and between adjacent turn electrode and at the centers of chassis body, multiple outlet end pipes are located in chassis body and between outmost turns electrode and innermost circle electrodes；Gas handling system is connected with multiple inlet-end manifolds；Outlet system is connected with multiple outlet end pipes.Polycrystalline silicon reducing furnace according to the present invention has the characteristics that compact-sized, integrated enlargement, single furnace output is high, the quality of production is excellent, energy-efficient.
Description
Technical field
The present invention relates to technical field of polysilicon production, more particularly, to a kind of polycrystalline silicon reducing furnace.
Background technique
Existing polycrystalline silicon reducing furnace structure design it is not reasonable, cause installation and it is difficult in maintenance, be large polycrystalline silicon also
The popularization and application of former furnace bring obstruction, and production capacity and production efficiency is not high, and energy consumption is larger.
Summary of the invention
The present invention is directed at least solve one of the technical problems existing in the prior art.For this purpose, the present invention proposes that one kind is more
Crystal silicon reduction furnace, the polycrystalline silicon reducing furnace have that compact-sized, integrated enlargement, single furnace output is high, the quality of production is excellent, section
The efficient advantage of energy.
Polycrystalline silicon reducing furnace according to an embodiment of the present invention, comprising: furnace body；Chassis assembly, the chassis assembly include: bottom
Disk ontology, the chassis body and the furnace body limit reaction chamber, multiple electrodes, and multiple electrodes are located at the chassis sheet
Installation foundation is provided on body and for the deposition vehicle silicon core in the reaction chamber, multiple electrodes are arranged in the chassis body
Arrange into multi-turn, every circle electrode spaced set and center is located on the central axis of the chassis body, multi-turn electrode is described in
The spaced radial of chassis body is arranged, and multiple inlet-end manifolds, multiple inlet-end manifolds are located in the chassis body and are located at
Between adjacent turn electrode and at the center of the chassis body, multiple outlet end pipes, multiple outlet end pipes are located at described
In chassis body and between outmost turns electrode and innermost circle electrode；Gas handling system, the gas handling system and it is multiple it is described into
Gas end pipe is connected；Outlet system, the outlet system are connected with multiple outlet end pipes.
Polycrystalline silicon reducing furnace according to an embodiment of the present invention, reasonable structural arrangement, size is suitable, consequently facilitating installation and dimension
Shield is conducive to integrated enlargement, and can discharge the production capacity of polysilicon to greatest extent, is effectively reduced the production energy of polysilicon
Consumption, improves the quality of production and production efficiency of polysilicon.
In addition, polycrystalline silicon reducing furnace according to an embodiment of the present invention also has following additional technical characteristic:
According to some embodiments of the present invention, the interior diameter of the chassis body is 2800mm-3000mm, and the electrode is
48 pairs.
According to some embodiments of the present invention, the electrode is 48 pairs and is arranged in 4-6 circle in the chassis body.
Further, the distribution of electrodes along the radial direction of the chassis body from outside to inside first to the 5th circle on,
16 pairs of electrodes are distributed on the first lap, 13 pairs of electrodes are distributed on second circle, are distributed with 10 pairs on the third circle
Electrode is distributed with 6 pairs of electrodes on the 4th circle, 3 pairs of electrodes is distributed on the 5th circle.
According to some embodiments of the present invention, each electrode includes: electrode tip holder, and the electrode tip holder is located at the chassis
On ontology；Electrode body, the electrode body are located on the electrode tip holder, wherein the two neighboring electrode body of every circle electrode
Positive and negative anodes it is oppositely arranged and adjacent two pairs of electrodes pass through electrode plate and connect.
According to some embodiments of the present invention, the inlet-end manifold is 20-50, wherein in multiple inlet-end manifolds
One be located at the center of the chassis body and remaining is arranged in multi-turn, every circle inlet-end manifold be located at adjacent turn electrode it
Between.
Optionally, remaining described inlet-end manifold is dispensed along first to of the radial direction of the chassis body from outside to inside
Four enclose, and 13 inlet-end manifolds are distributed on the first lap, 10 inlet-end manifolds, the third circle is distributed on second circle
On be distributed with 5 inlet-end manifolds, 3 inlet-end manifolds are distributed on the 4th circle.
According to some embodiments of the present invention, multiple outlet end pipes are arranged at least one in the chassis body
Circle is often irised out and is equipped with the inlet-end manifold between the adjacent outlet end pipe of gas end pipe.
According to some embodiments of the present invention, the outlet end pipe is 4-6 and along the circumferential uniform of the chassis body
It is dispensed along between the second circle electrode and third circle electrode of the radial direction of the chassis body from the inside to the outside.
According to some embodiments of the present invention, the chassis body includes: chassis flange；Upper plate, the upper plate are set
In the chassis flange；Lower plate, the lower plate is located in the chassis flange and is located at below the upper plate, described
Lower plate and the upper plate and the chassis flange limit chassis cooling chamber；Multiple deflectors, multiple deflectors are set
Multiple helical flow paths are limited in the chassis cooling chamber and in the chassis cooling chamber.
Advantageously, the chassis assembly further include: multiple chassis inlet tubes, multiple chassis inlet tubes be located at it is described under
On bottom plate and each chassis inlet tube is connected to multiple helical flow paths respectively, and multiple chassis inlet tubes are located at most
Between outer ring electrode and innermost circle electrode and at the center of the chassis body；Multiple chassis outlet tubes, multiple chassis
Outlet tube is located on the lower plate and each chassis outlet tube is connected to multiple helical flow paths respectively, multiple described
Chassis outlet tube is in the outside for being radially located at outmost turns electrode of the chassis body.
In some embodiments of the invention, the gas handling system includes: air inlet endless tube, the air inlet endless tube be equipped with into
Port and be arranged below the lower plate；Multiple air intake branches, multiple air intake branches are connected on the air inlet endless tube
And each air intake branch is connected with inlet-end manifold described at least one.
In some embodiments of the invention, the outlet system includes: outlet endless tube, is set on the outlet endless tube
There is gas outlet and is arranged below the lower plate；Multiple going out gas branch pipe, multiple going out gas branch pipe are connected to the compression ring out
It is connected on pipe and respectively with multiple outlet end pipes.
Advantageously, multiple chassis inlet tubes are respectively nested in the going out gas branch pipe and are located in the chassis body
Outside air intake branch at the heart.
Preferably, the upper end of the chassis outlet tube is higher than the inner bottom surface of the chassis cooling chamber.
According to some embodiments of the present invention, the top of the furnace body be hemispherical protruding upward or elliposoidal end socket,
There is cooling water jecket, the lower part of the side wall of the furnace body is connected with to be connected to the cooling water jecket in the wall of the furnace body
The outlet pipe being connected to the cooling water jecket is connected at the top of water inlet pipe and the end socket.
According to some embodiments of the present invention, the top of the furnace body is equipped with observation visor.
Additional aspect and advantage of the invention will be set forth in part in the description, and will partially become from the following description
Obviously, or practice through the invention is recognized.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of polycrystalline silicon reducing furnace according to an embodiment of the present invention；
Fig. 2 is the structural schematic diagram of the chassis assembly of polycrystalline silicon reducing furnace according to an embodiment of the present invention；
Fig. 3 is the disengaging gas track schematic diagram of polycrystalline silicon reducing furnace according to an embodiment of the present invention.
Appended drawing reference:
Polycrystalline silicon reducing furnace 1,
Furnace body 100, end socket 110, water inlet pipe 120, outlet pipe 130 observe visor 140, and visor purges entrance 141, suspender
150,
Chassis body 210, electrode 220, inlet-end manifold 230, outlet end pipe 240, chassis inlet tube 250, chassis outlet tube
260,
Air inlet endless tube 310, air intake branch 320,
Outlet endless tube 410, gas outlet 411, going out gas branch pipe 420.
Specific embodiment
The embodiment of the present invention is described below in detail, examples of the embodiments are shown in the accompanying drawings, wherein from beginning to end
Same or similar label indicates same or similar element or element with the same or similar functions.Below with reference to attached
The embodiment of figure description is exemplary, and for explaining only the invention, and is not considered as limiting the invention.
In the description of the present invention, it is to be understood that, term " center ", "upper", "lower", "vertical", "horizontal",
The orientation or positional relationship of the instructions such as "top", "bottom", "inner", "outside", " radial direction ", " circumferential direction " be orientation based on the figure or
Positional relationship is merely for convenience of description of the present invention and simplification of the description, rather than the device or element of indication or suggestion meaning must
There must be specific orientation, be constructed and operated in a specific orientation, therefore be not considered as limiting the invention.In addition, art
Language " first ", " second " are used for descriptive purposes only and cannot be understood as indicating or suggesting relative importance or implicitly indicate institute
The quantity of the technical characteristic of instruction." first " is defined as a result, the feature of " second " can explicitly or implicitly include one
Or more this feature.In the description of the present invention, unless otherwise indicated, the meaning of " plurality " is two or more.
The application makes the discovery of following facts and problem and understanding based on inventor:
Polycrystalline silicon reducing furnace is the core equipment in polysilicon production process, and determines the production capacity and energy consumption of production system
Key link, therefore, polycrystalline silicon reducing furnace designs and manufactures, and directly influences the quality, yield and production of polysilicon
Cost.
Production of polysilicon is with " improved Siemens " for mainstream technology at present, that is, hydrogen according to a certain ratio and three
The gaseous mixture of chlorine hydrogen silicon sprays into reaction chamber from the air inlet of polycrystalline silicon reducing furnace, and vapour phase reduction occurs in polycrystalline silicon reducing furnace
Reaction, the polysilicon of generation are deposited directly to the silicon core carrier surface in furnace, and with the lasting progress of reaction, silicon rod is constantly deposited
It grows and is finally reached expected silicon rod production requirement.
There are mainly two types of structure types, i.e. regular hexagon honeycomb silicon for the design that silicon rod is arranged in existing polycrystalline silicon reducing furnace
Stick arragement construction and concentric circles arrangement silicon rod structure, wherein polycrystalline silicon reducing furnace of the silicon rod logarithm less than or equal to 24 pairs is with concentric
Based on circle structure, and polycrystalline silicon reducing furnace of the silicon rod logarithm greater than 24 pairs be then based on regular hexagon structure, therefore in polysilicon
On the enlarged road of reduction furnace, equal proportion expansion is carried out according to traditional thinking always, that is, with increasing for silicon rod logarithm,
The size of polycrystalline silicon reducing furnace is also increasing, cause installation and it is difficult in maintenance, be large polycrystalline silicon reducing furnace popularization and application
Bring obstruction.
For this purpose, inventor a large amount of process flow calculating and equipment simulating optimization calculate on the basis of, to polycrystalline reduction
Fluid flowing in furnace, Temperature Distribution carry out Modeling Calculation, and by adjusting different arrangements, air inlet and the outlet of silicon rod
The different location of mouth carries out flow field simulation comparison, proposes a kind of polycrystalline silicon reducing furnace 1, which has structure tight
It gathers, integrated enlargement, the advantage that single furnace output is high, the quality of production is excellent, energy-efficient.
Polycrystalline silicon reducing furnace 1 according to an embodiment of the present invention is described below with reference to Fig. 1-Fig. 3.
As shown in Figure 1-Figure 3, polycrystalline silicon reducing furnace 1 according to an embodiment of the present invention, including furnace body 100, chassis assembly, into
Gas system and outlet system.
Chassis assembly includes chassis body 210, multiple electrodes 220, multiple inlet-end manifolds 230 and multiple outlet end pipes 240.
Chassis body 210 is mounted on furnace body 100, and chassis body 210 and furnace body 100 limit reaction chamber (not shown).It is more
A electrode 220 is located in chassis body 210, and multiple electrodes 220 provide installation foundation for the deposition vehicle silicon core in reaction chamber,
Silicon rod is installed, multiple electrodes 220 are arranged in multi-turn in chassis body 210, between every circle electrode 220 is equal on each electrode 220
Away from setting, and the whole center of every circle electrode 220 is located on the central axis of chassis body 210, and multi-turn electrode 220 is along chassis sheet
The spaced radial of body 210 is arranged.Thermal field is relatively uniform around every silicon rod as a result, and silicon rod can be grown vertically and uniformly, from
And realize the peak use rate to thermal energy.
Multiple inlet-end manifolds 230 are located in chassis body 210, and multiple inlet-end manifolds 230 be located at adjacent turn electrode 220 it
Between and the center of chassis body 210 at, as a result, other than the inlet-end manifold 230 at center, remaining inlet-end manifold 230 is equal
Cloth can guarantee that every circle silicon rod has suitable air demand in this way, guarantee that silicon rod obtains uniform gas between two adjacent rings silicon rod
Amount supply, is conducive to silicon rod homoepitaxial.
Multiple outlet end pipes 240 are located in chassis body 210, and multiple outlet end pipes 240 be located at outmost turns electrode 220 with
Between innermost circle electrode 220, that is, outlet end pipe 240 is not also located at the center of furnace body 100 both not close to the wall surface of furnace body 100
Place not only can avoid the cooling wall band too much heat away of 100 inside of furnace body, to reduce thermal losses, simultaneously also
Sedimentation time of the material in polycrystalline silicon reducing furnace 1 can be extended；And temperature heat build-up effect caused by the outlet of center is avoided, it keeps away
Exempt from material in the excessively high caused furnace body 100 of 100 internal temperature of furnace body and be easy atomization, influences the stable operation of polycrystalline silicon reducing furnace 1,
As a result, the air outlet temperature of polycrystalline silicon reducing furnace 1 significantly reduces, the heat load of upstream device is reduced.
As shown in figure 3, polycrystalline silicon reducing furnace 1 according to an embodiment of the present invention, outlet end pipe 240 is both not close to furnace body 100
Wall surface, also not positioned at furnace body 100 center at, so that the flow path of material is longer, extend material in furnace body 100
Sedimentation time.It is appreciated that the specific location of outlet end pipe 240 can be adjusted according to actual production demand.
Gas handling system is connected with multiple inlet-end manifolds 230, and outlet system is connected with multiple outlet end pipes 240.Gas by into
Gas system enters multiple inlet-end manifolds 230, then enters reaction chamber by multiple inlet-end manifolds 230, the tail gas after reaction is by multiple
Outlet end pipe 240 is discharged into outlet system, is finally discharged by outlet system.In this way, can effectively expand the lower part peace of chassis assembly
Fill space.
Specifically, the interior diameter of chassis body 210 is 2800mm-3000mm, it is in other words, mating with chassis body 210
Furnace body 100 interior diameter be 2800mm-3000mm, electrode 220 be 48 pairs, in this way, realizing in the lesser chassis sheet of size
Silicon rod is arranged on body 210 as much as possible, it is compact-sized.Preferably, the distance between two neighboring electrode 220 is 200mm-
250mm, that is, the distance between two neighboring silicon rod is 200mm-250mm, so that structure is more reasonable, compact.
Polycrystalline silicon reducing furnace 1 according to an embodiment of the present invention, reasonable structural arrangement, size is suitable, consequently facilitating installation and
Maintenance is conducive to integrated enlargement, and can discharge the production capacity of polysilicon to greatest extent, is effectively reduced the production of polysilicon
Energy consumption improves the quality of production and production efficiency of polysilicon.
According to some embodiments of the present invention, each electrode 220 includes electrode tip holder and electrode body.Electrode tip holder is located at chassis
On ontology 210.Electrode body is located on electrode tip holder.Wherein, the positive and negative anodes of the two neighboring electrode body of every circle electrode 220 are reversed
It is arranged and adjacent two pairs of electrodes 220 passes through electrode plate and connect.
For example, as shown in Fig. 2, electrode 220 is 48 pairs i.e. 96 electrodes 220, and 48 pairs of electrodes 220 are in chassis body
4-6 circle is arranged on 210.Electrode 220 can arrange by concentric circles or polygon mode, but be not limited to concentric circles or polygonal array
Mode.
By taking 5 circumference arrange 48 pairs of electrodes 220 by concentric circular fashion as an example, electrode 220 is dispensed along chassis body 210
On radial the first to the 5th circle from outside to inside, 16 pairs i.e. 32 electrode 220 is distributed on first lap, is distributed with 13 on the second circle
To i.e. 26 electrodes 220,10 pairs i.e. 20 electrode 220 is distributed on third circle, 6 pairs i.e. 12 electrode is distributed on the 4th circle
220, the 5th circle on 3 pairs i.e. 6 electrode 220 is distributed with.Adjacent two pairs of electrodes 220 are connected by electrode plate, two neighboring electrode
It is overlapped between 220 by silicon core bridge.Preferably, the distance between the two neighboring electrode 220 in every circle electrode 220 is
240mm。
According to some embodiments of the present invention, as shown in Fig. 2, inlet-end manifold 230 is 20-50, wherein an inlet end
Pipe 230 is located at the center of chassis body 210, remaining inlet-end manifold 230 is arranged in multi-turn, and every circle inlet-end manifold 230 is located at phase
Between neighbour's circle electrode 220.
For example, as shown in Fig. 2, inlet-end manifold 230 is 32, wherein 31 inlet-end manifolds 230 are dispensed along chassis
First to fourth circle of the radial direction of ontology 210 from outside to inside, is distributed with 13 inlet-end manifolds 230 on first lap, on the second circle point
10 inlet-end manifolds 230 are furnished with, 5 inlet-end manifolds 230 are distributed on third circle, 3 inlet-end manifolds are distributed on the 4th circle
230.In addition, being located at the center of chassis body 210 there are one inlet-end manifold 230, to effectively avoid center that outlet is arranged
Mouthfuls 411 and cause nearby by the flow dead zone formed that builds the pressure, the growth rate of silicon rod lower area is significantly improved.
According to some embodiments of the present invention, specific as shown in Fig. 2, multiple outlet end pipes 240 are arranged in chassis body 210
At least one circle is arranged into, often irises out and is equipped with inlet-end manifold 230 between the adjacent outlet end pipe 240 of gas end pipe 240.Inlet end as a result,
Pipe 230 and outlet end pipe 240 disperse arranged crosswise, meet uniformity of both air inlet and outlet, and be conducive to the growth of silicon rod.
For example, as shown in Fig. 2, outlet end pipe 240 is 4-6, and outlet end pipe 240 is along the week of chassis body 210
To be evenly distributed on along chassis body 210 radial direction from the inside to the outside second circle electrode 220 and third circle electrode 220 between.It is excellent
Selection of land, the diameter of 240 place circumference of outlet end pipe are 1500mm-1600mm.
According to some embodiments of the present invention, as shown in Figure 1, chassis body 210 includes chassis flange, upper plate, bottom
Plate and multiple deflectors.Upper plate is located in the flange of chassis.Lower plate is located in the flange of chassis, and lower plate is located under upper plate
Side, lower plate and upper plate and chassis flange limit chassis cooling chamber.Multiple deflectors are located in the cooling chamber of chassis, and multiple
Deflector limits multiple helical flow paths in the cooling chamber of chassis.
Advantageously, as shown in Figure 1, chassis assembly further includes multiple chassis inlet tubes 250 and multiple chassis outlet tubes 260.
Multiple chassis inlet tubes 250 are located on lower plate, and each chassis inlet tube 250 is connected to multiple helical flow paths respectively, multiple
Chassis inlet tube 250 is between outmost turns electrode 220 and innermost circle electrode 220 and at the center of chassis body 210, thus
Guarantee has coolant liquid to flow into chassis cooling chamber from the center of chassis body 210, guarantees the cooling uniformity of chassis body 210.
Multiple chassis outlet tubes 260 are located on lower plate, and each chassis outlet tube 260 is connected to multiple helical flow paths respectively, multiple
Chassis outlet tube 260 is in the outside for being radially located at outmost turns electrode 220 of chassis body 210.
Multiple helical flow paths are from the center rotation direction edge of chassis body 210.Coolant liquid enters chassis from chassis inlet tube 250
After cooling chamber, uniformly through each helical flow path, upper plate, inlet-end manifold 230, outlet end pipe 240 and electrode 220 are forced
It is cooling.Deflector is equipped with radian appropriate, it is ensured that is not in cooling dead angle and influences cooling effect.Radian on each deflector
Several intercommunicating pores are set on the part changed greatly, so that two sides coolant liquid mutually circulates, avoid generating flow dead zone, coolant liquid
It after by center to outer ring several layers helical flow path, is flowed out by chassis outlet tube 260, guarantees to radiate to chassis body 210
Cooling uniformity.
In some embodiments of the invention, as shown in Figure 1, gas handling system includes air inlet endless tube 310 and multiple air inlet branch
Pipe 320.Air inlet endless tube 310 is equipped with air inlet (not shown), and air inlet endless tube 310 is arranged below lower plate.It is multiple
Air intake branch 320 is connected on air inlet endless tube 310, and each air intake branch 320 is connected at least one inlet-end manifold 230.Gas
Body enters air inlet endless tube 310 by air inlet, then enters inlet-end manifold 230 by multiple air intake branches 320, finally by multiple air inlets
End pipe 230 enters in reaction chamber.Thus, it is possible to guarantee that gas even into furnace body 100, and reduces chassis body 210
The air supply pipe quantity of lower section optimizes the space of 210 lower section of chassis body, conducive to the installation and maintenance of polycrystalline silicon reducing furnace 1.It can
To understand, each air intake branch 320 can be connected to multiple inlet-end manifolds 230 respectively, to save installation space.
Further, as shown in Figure 1, outlet system includes outlet endless tube 410 and multiple going out gas branch pipe 420.Outlet endless tube
410 are equipped with gas outlet 411, and outlet endless tube 410 is arranged below lower plate.Multiple going out gas branch pipe 420 are connected to out compression ring
On pipe 410, and multiple going out gas branch pipe 420 are connected with multiple outlet end pipes 240 respectively.High-temperature tail gas in furnace body 100 is by multiple
Outlet end pipe 240 enters multiple going out gas branch pipe 420, then converges to outlet endless tube 410 and is discharged by gas outlet 411.
For example, as illustrated in fig. 1 and 2, air intake branch 320 is 14, and going out gas branch pipe 420 is 5, and lower plate is equipped with
5 chassis inlet tube 250 and 6 chassis outlet tubes, 260,5 chassis inlet tubes 250 be respectively nested in 5 going out gas branch pipe 420 with
And outside the air intake branch 320 at 210 center of chassis body, it thus can not only guarantee that chassis cooling chamber can be simultaneously the bottom of at
The center of disk ontology 210 and middle position flow into coolant liquid, to guarantee the cooling uniformity of chassis body 210, Er Qieke
To reduce the pipeline quantity of 210 lower part of chassis body, the installation space of 210 lower part of chassis body is saved.
Optionally, the upper end of chassis outlet tube 260 is higher than the inner bottom surface of chassis cooling chamber, to guarantee to begin in the cooling chamber of chassis
Eventually with the presence of the coolant liquid of certain altitude.
According to some embodiments of the present invention, the top of furnace body 100 is hemispherical protruding upward or elliposoidal end socket
110, the stress of hemispherical or elliposoidal end socket 110 is good and stress is small, the rising gas of 110 lower part of hemispherical or elliposoidal end socket
It flows the rising resistance at top to reduce, the serious problem of silicon rod top cauliflower is advantageously accounted for, to the quality of silicon rod bridging part
There is certain improvement result.There is cooling water jecket, the lower part of the side wall of furnace body 100 is connected with and cooling water in the wall of furnace body 100
The water inlet pipe 120 of collet connection, the top of end socket 110 are connected with the outlet pipe 130 being connected to cooling water jecket, and cooling water is from furnace
The side of 100 lower part of body enters, and flows out at the top of furnace body 100.Preferably, the outside wall surface of furnace body 100 can be equipped with insulating layer with
Avoid thermal loss.
According to some embodiments of the present invention, the top of furnace body 100 is equipped with observation visor 140, is conducive to timely feedback silicon
The growing state of stick rationally controls amount of cooling water and silicon rod electric current.Optionally, the side wall of furnace body 100 is equipped with visor and purges entrance
141, for example, purging entrance 141 by visor is blown into hydrogen into furnace body 100, to reduce the temperature of observation visor 140.Favorably
Ground, the top of furnace body 100 is also provided with the suspender 150 for lifting operation, consequently facilitating I& M.
Polycrystalline silicon reducing furnace 1 according to an embodiment of the present invention, mating corresponding power supply system, in standby redundancy and deposition
In the case that carrier installation is improved, the efficient production of polysilicon can be realized.Wherein, the mounting height of deposition vehicle can be
2.8m-3.4m。
Other of polycrystalline silicon reducing furnace 1 according to an embodiment of the present invention are constituted and are operated for ordinary skill people
Member for be all it is known, be not detailed herein.
In the description of the present invention, it should be noted that unless otherwise clearly defined and limited, term " installation ", " phase
Even ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or be integrally connected；It can
To be mechanical connection, it is also possible to be electrically connected；It can be directly connected, can also can be indirectly connected through an intermediary
Connection inside two elements.For the ordinary skill in the art, above-mentioned term can be understood at this with concrete condition
Concrete meaning in invention.
In the description of this specification, reference term " one embodiment ", " some embodiments ", " specific embodiment ", " show
The description of example " or " some examples " etc. means particular features, structures, materials, or characteristics described in conjunction with this embodiment or example
It is included at least one embodiment or example of the invention.In the present specification, schematic expression of the above terms are different
Surely identical embodiment or example is referred to.Moreover, particular features, structures, materials, or characteristics described can be any
It can be combined in any suitable manner in one or more embodiment or examples.
Although an embodiment of the present invention has been shown and described, it will be understood by those skilled in the art that: not
A variety of change, modification, replacement and modification can be carried out to these embodiments in the case where being detached from the principle of the present invention and objective, this
The range of invention is defined by the claims and their equivalents.
Claims (13)
1. a kind of polycrystalline silicon reducing furnace characterized by comprising
Furnace body；
Chassis assembly, the chassis assembly include:
Chassis body, the chassis body and the furnace body limit reaction chamber,
Multiple electrodes, multiple electrodes are located in the chassis body and provide for the deposition vehicle silicon core in the reaction chamber
Installation foundation, multiple electrodes are arranged in multi-turn in the chassis body, every circle electrode spaced set and center is located at
On the central axis of the chassis body, multi-turn electrode is arranged along the spaced radial of the chassis body,
Multiple inlet-end manifolds, multiple inlet-end manifolds are located in the chassis body and between adjacent turn electrodes and institute
It states at the center of chassis body,
Multiple outlet end pipes, multiple outlet end pipes are located in the chassis body and are located at outmost turns electrode and innermost circle electricity
Between pole,
Gas handling system, the gas handling system are connected with multiple inlet-end manifolds,
Outlet system, the outlet system are connected with multiple outlet end pipes,
The interior diameter of the chassis body is 2800mm-3000mm, and the electrode is 48 pairs,
The inlet-end manifold is 32, wherein one in multiple inlet-end manifolds is located at the center of the chassis body
And remaining inlet-end manifold is dispensed along first to fourth circle of the radial direction of the chassis body from outside to inside, on the first lap
13 inlet-end manifolds are distributed with, 10 inlet-end manifolds are distributed on second circle, 5 inlet ends are distributed on the third circle
It manages, 3 inlet-end manifolds is distributed on the 4th circle, multiple outlet end pipes are arranged at least one in the chassis body
Circle is often irised out and is equipped with the inlet-end manifold between the adjacent outlet end pipe of gas end pipe, and at least one irises out gas end pipe and the third
Circle inlet-end manifold is located on same circumference and arranged in a crossed manner on the circumference.
2. polycrystalline silicon reducing furnace according to claim 1, which is characterized in that the electrode is 48 pairs and in the chassis sheet
4-6 circle is arranged on body.
3. polycrystalline silicon reducing furnace according to claim 2, which is characterized in that the distribution of electrodes is along the chassis body
Radial direction the first to the 5th circle from outside to inside on, be distributed with 16 pairs of electrodes on the first lap, be distributed on second circle
10 pairs of electrodes are distributed on the third circle for 13 pairs of electrodes, are distributed with 6 pairs of electrodes on the 4th circle, on the 5th circle point
It is furnished with 3 pairs of electrodes.
4. polycrystalline silicon reducing furnace according to claim 1, which is characterized in that each electrode includes:
Electrode tip holder, the electrode tip holder are located in the chassis body；
Electrode body, the electrode body are located on the electrode tip holder, wherein the two neighboring electrode body of every circle electrode is just
Cathode is oppositely arranged and adjacent two pairs of electrodes pass through electrode plate and connect.
5. polycrystalline silicon reducing furnace according to claim 1, which is characterized in that the outlet end pipe is 4-6 and along described
The circumferential direction of chassis body is evenly distributed on radial direction the second circle electrode and third circle electrode from the inside to the outside along the chassis body
Between.
6. polycrystalline silicon reducing furnace according to any one of claims 1-5, which is characterized in that the chassis body includes:
Chassis flange；
Upper plate, the upper plate are located in the chassis flange；
Lower plate, the lower plate are located in the chassis flange and are located at below the upper plate, the lower plate with it is described
Upper plate and the chassis flange limit chassis cooling chamber；
Multiple deflectors, multiple deflectors are located in the chassis cooling chamber and limit in the chassis cooling chamber more
A helical flow path.
7. polycrystalline silicon reducing furnace according to claim 6, which is characterized in that the chassis assembly further include:
Multiple chassis inlet tubes, multiple chassis inlet tubes are located on the lower plate and each chassis inlet tube difference
It is connected to multiple helical flow paths, multiple chassis inlet tubes are between outmost turns electrode and innermost circle electrode and institute
It states at the center of chassis body；
Multiple chassis outlet tubes, multiple chassis outlet tubes are located on the lower plate and each chassis outlet tube difference
It is connected to multiple helical flow paths, multiple chassis outlet tubes are radially located at outmost turns electrode the chassis body
Outside.
8. polycrystalline silicon reducing furnace according to claim 7, which is characterized in that the gas handling system includes:
Air inlet endless tube, the air inlet endless tube are equipped with air inlet and are arranged below the lower plate；
Multiple air intake branches, multiple air intake branches be connected on the air inlet endless tube and each air intake branch at least
One inlet-end manifold is connected.
9. polycrystalline silicon reducing furnace according to claim 8, which is characterized in that the outlet system includes:
Outlet endless tube, the outlet endless tube are equipped with gas outlet and are arranged below the lower plate；
Multiple going out gas branch pipe, multiple going out gas branch pipe be connected on the outlet endless tube and respectively with multiple outlet end pipes
It is connected.
10. polycrystalline silicon reducing furnace according to claim 9, which is characterized in that multiple chassis inlet tubes are nested respectively
In the going out gas branch pipe and outside the air intake branch at the chassis body center.
11. polycrystalline silicon reducing furnace according to claim 7, which is characterized in that the upper end of the chassis outlet tube is higher than institute
State the inner bottom surface of chassis cooling chamber.
12. polycrystalline silicon reducing furnace according to any one of claims 1-5, which is characterized in that the top of the furnace body is
Hemispherical or elliposoidal end socket protruding upward, has cooling water jecket in the wall of the furnace body, under the side wall of the furnace body
Portion is connected with the water inlet pipe being connected to the cooling water jecket and is connected at the top of the end socket to be connected with the cooling water jecket
Logical outlet pipe.
13. polycrystalline silicon reducing furnace according to any one of claims 1-5, which is characterized in that the top of the furnace body is set
There is observation visor.
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| CN201610846744.4A CN106276914B (en) | 2016-09-23 | 2016-09-23 | Polycrystalline silicon reducing furnace |
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| CN106276914B true CN106276914B (en) | 2019-03-01 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110655083B (en) * | 2019-11-12 | 2021-04-27 | 四川永祥新能源有限公司 | Polycrystalline silicon reduction furnace |
| CN111039292A (en) * | 2019-12-18 | 2020-04-21 | 上海市特种设备监督检验技术研究院 | Reduction furnace chassis structure |
| CN113375058B (en) * | 2021-06-15 | 2023-12-01 | 新疆硅基新材料创新中心有限公司 | Tail gas emission structure and reducing furnace |
| CN115092932B (en) * | 2022-07-04 | 2023-08-22 | 衡阳凯新特种材料科技有限公司 | Reduction furnace for producing polycrystalline silicon and feeding control method |
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| JPH06172093A (en) * | 1992-12-10 | 1994-06-21 | Koujiyundo Silicon Kk | Reactional furnace for producing semiconductor-grade polycrystalline silicon |
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