CN115092932B - Reduction furnace for producing polycrystalline silicon and feeding control method - Google Patents
Reduction furnace for producing polycrystalline silicon and feeding control method Download PDFInfo
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- CN115092932B CN115092932B CN202210780398.XA CN202210780398A CN115092932B CN 115092932 B CN115092932 B CN 115092932B CN 202210780398 A CN202210780398 A CN 202210780398A CN 115092932 B CN115092932 B CN 115092932B
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P20/00—Technologies relating to chemical industry
- Y02P20/10—Process efficiency
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Abstract
The application belongs to the technical field of polysilicon production, and particularly relates to a reducing furnace for producing polysilicon and a feeding control method, wherein the reducing furnace comprises a chassis; the electrodes are arranged on the chassis, and each electrode is flexibly connected with the chassis; the air inlet assembly is arranged on the chassis and comprises a plurality of air inlet branch pipes; the control mechanism is used for controlling the air inlet and/or controlling the electrification of the electrodes, controls the switch of the feeding valve and/or the electrification of the electrodes through feedback signals of the weighing sensor, and can timely find abnormal conditions through analysis of the control mechanism, judge that 'popcorn' is generated by a silicon rod, independently control the electrification of a certain feeding valve switch and/or electrode by the control mechanism, adjust the growth of the silicon rod on the abnormal electrode, prevent the 'popcorn' on the silicon rod from overgrowing, and enable the air flow field at the top of the reduction furnace to be stable; the polysilicon rod with 'popcorn' is prevented from growing continuously, the 'popcorn' generated by the polysilicon rod of the whole furnace is reduced, and the waste of raw materials and energy is reduced.
Description
Technical Field
The application belongs to the technical field of polysilicon production, and particularly relates to a reducing furnace for producing polysilicon and a feeding control method.
Background
The polysilicon reducing furnace is one of the core devices for producing polysilicon by Siemens method, the air inlet pipe in the polysilicon reducing furnace is composed of an air inlet main pipe and a plurality of air inlet branch pipes connected with the air inlet main pipe, the air inlet pipe is used for feeding SiHCl 3 And H is 2 And after a series of chemical reactions are performed, reaction tail gas flows out from an air outlet at the top of the reduction furnace, and as the silicon core in the reduction furnace needs to be maintained at 1050-1100 ℃ for production, the furnace barrel and the chassis of the reduction furnace are both required to be cooled by introducing cooling water, so that the upper layer temperature of the chassis can be cooled to the average temperature of about 260 ℃. In the production process, the phenomenon of 'popcorn' appears on the silicon rod due to the distribution of the airflow field, the uneven temperature of the silicon rod and the like, defective products are generated, the whole furnace product is easily scrapped, and the waste of raw materials and energy sources is caused.
At present, although the generation of 'popcorn' can be reduced by adjusting the distribution of air inlets of a chassis of a reduction furnace, the problem of 'popcorn' still exists, and when the problem of 'popcorn' is not found in time and corresponding measures are taken, the problem of large turbulence of an air flow field at the top of the reduction furnace is caused because of the gradual increase of 'popcorn' generated by individual polycrystalline silicon rods, so that the 'popcorn' is generated by the polycrystalline silicon rods of the whole furnace.
Disclosure of Invention
The application provides a reducing furnace for producing polycrystalline silicon and a feeding control method, which can timely find that a single crystal silicon rod generates 'popcorn', timely adjust the discharge of an air inlet and solve at least one problem in the background art.
The reducing furnace for producing polysilicon and the feeding control method provided by the application based on the purpose comprise the following steps:
a chassis;
the electrodes are arranged on the chassis, and each electrode is flexibly connected with the chassis;
the air inlet assembly is arranged on the chassis and comprises an air inlet main pipe and a plurality of air inlet branch pipes, a buffer cavity is arranged between the air inlet main pipe and the air inlet branch pipes, and the air inlet main pipe comprises a main air inlet nozzle arranged in the buffer cavity; and
the control mechanism is used for controlling air intake and/or controlling the electrifying of the electrodes and comprises a plurality of weighing sensors and a plurality of feeding valves, each weighing sensor is correspondingly arranged at the bottom of one electrode, and each feeding valve is correspondingly arranged on one air intake branch pipe; the control mechanism controls the switch of the feed valve and/or the electrification of the electrode through a feedback signal of the weighing sensor.
Optionally, the chassis includes a plurality of annular protruding, and every annular protruding corresponds to overlap an electrode, annular protruding and electrode clearance fit, every annular protruding cover is equipped with at least one and blocks the lid, block the lid cover and locate on the electrode, annular protruding and block the lid and can be in axial relative movement.
Optionally, the main air inlet nozzle comprises a plurality of buffer covers, a plurality of buffer covers are coaxially distributed along the air flow direction, and a group of discharge ports are arranged between two adjacent buffer covers.
Optionally, a plurality of circumferentially distributed dispersing holes are formed in the buffer cover.
Optionally, the buffer cover is horn-shaped.
Optionally, the electrode sleeve is provided with a centering piece, the centering piece comprises a ball which is in rolling connection with the electrode, and the centering piece is embedded in the chassis.
Optionally, the electrode includes an insulating layer disposed at an outermost layer.
Optionally, the insulating layer is made of a ceramic material.
Optionally, the control mechanism further comprises a controller and a power switch electrically connected with each electrode, and the controller is respectively in communication connection with the weighing sensor, the feeding valve and the power switch.
A method for controlling the feeding of a reducing furnace for producing polysilicon includes such steps as sensing the weight variation of each electrode by a weighing sensor, feeding it back to a controller, and turning off the feeding valve nearest to abnormal electrode when one or more electrodes have a weight exceeding the threshold value of normal variation rule, or turning off the power supply to prevent the silicon rod from growing continuously.
The beneficial effects of the application are as follows: according to the reducing furnace for producing polysilicon, provided by the application, the weighing sensor is arranged at the bottom of each electrode, so that the heating efficiency of the silicon rod which generates 'popcorn' by a silicon core can be obviously reduced in the production process, the growth speed is obviously slower than that of other silicon rods, the weight change of the electrodes is detected in real time through the weighing sensor, the abnormal condition can be timely found, namely, the weight increase speed of the silicon rod is obviously reduced, the silicon rod is judged to generate 'popcorn', the control mechanism independently controls a certain feed valve switch and/or the electrode to be electrified, the growth of the silicon rod on the abnormal electrode is regulated, the 'popcorn' on the silicon rod is prevented from growing, the air flow field at the top of the reducing furnace is kept stable, so that other polysilicon rods can continue to grow normally, and the 'popcorn' generated by the individual polysilicon rods is avoided.
The change of the weight of the corresponding electrode is sensed and detected through the weighing sensor, the change of the polycrystalline silicon rod is accurately reflected, the controller gives corresponding instructions to control the opening and closing of the feeding valve, the distribution of the gas field in the reduction furnace is adjusted, and the control of the power switch is combined, so that the continuous growth of the 'popcorn' polycrystalline silicon rod is prevented, the 'popcorn' generated by the whole furnace polycrystalline silicon rod is reduced, and the waste of raw materials and energy is reduced.
Drawings
FIG. 1 is a schematic diagram of a reducing furnace according to an embodiment of the present application;
FIG. 2 is a schematic view of the bottom of a reduction furnace according to an embodiment of the present application;
FIG. 3 is an enlarged view of area A of FIG. 2;
FIG. 4 is a schematic view of a main air inlet nozzle according to an embodiment of the present application;
fig. 5 is a schematic diagram of a feed control method according to an embodiment of the present application.
In the figure: 10. a chassis; 11. an annular protrusion; 12. a centering member; 13. a ball; 20. an electrode; 21. a weighing sensor; 22. a battery cell; 23. an insulating layer; 24. a blocking cover; 30. an air intake assembly; 31. an air inlet main pipe; 32. an air inlet branch pipe; 33. a buffer chamber; 34. a main air inlet nozzle; 341. a buffer cover; 342. a discharge port; 35. a feed valve; 40. a furnace cover; 41. an air outlet pipe; 50. a silicon core.
Detailed Description
The present application will be further described in detail below with reference to specific embodiments and with reference to the accompanying drawings, in order to make the objects, technical solutions and advantages of the present application more apparent.
As shown in fig. 1 to 3, the present application provides a reduction furnace for producing polycrystalline silicon, comprising: a chassis 10; a plurality of groups of electrodes 20 arranged on the chassis 10, each electrode 20 being flexibly connected with the chassis 10; an air inlet assembly 30 arranged on the chassis 10, wherein the air inlet assembly 30 comprises an air inlet main pipe 31 and a plurality of air inlet branch pipes 32, a buffer cavity 33 is arranged between the air inlet main pipe 31 and the air inlet branch pipes 32, and the air inlet main pipe 31 comprises a main air inlet nozzle 34 arranged in the buffer cavity 33; and a control mechanism for controlling the intake and/or controlling the energization of the electrodes 20, the control mechanism comprising a plurality of weighing sensors 21 and a plurality of feed valves 35, each weighing sensor 21 being correspondingly disposed at the bottom of one electrode 20, each feed valve 35 being correspondingly disposed on one intake manifold 32; the control mechanism controls the feed valve 35 to switch and/or the electrode 20 to be energized through a feedback signal of the weighing sensor 21.
Compared with the prior art, the reducing furnace for producing polysilicon provided by the embodiment of the application has the advantages that the weighing sensor 21 is arranged at the bottom of each electrode 20, so that the heating efficiency of the silicon rod which generates ' popcorn ' by the silicon core 50 can be obviously reduced in the production process, the growth speed is obviously slower than that of other silicon rods, the weight change of the electrodes 20 is detected in real time through the weighing sensor 21, the abnormal condition can be timely found through analysis of the control mechanism, namely, the weight increase speed of the silicon rod is obviously reduced, the generation of ' popcorn ' by the silicon rod is judged, the control mechanism independently controls the switch of one feeding valve 35 and/or the energization of the electrode 20, the growth of the silicon rod on the abnormal electrode 20 is regulated, the ' popcorn ' on the silicon rod is not excessively grown, the airflow field at the top of the reducing furnace is kept stable, and thus other silicon rods can continue to normally grow, and the ' popcorn ' generated by the whole furnace polysilicon rod is prevented from being caused by the generation of ' individual polysilicon rod.
In this embodiment, referring to fig. 3, the chassis 10 includes a plurality of annular protrusions 11, each annular protrusion 11 correspondingly sleeves one electrode 20, the annular protrusions 11 are in clearance fit with the electrodes 20, each annular protrusion 11 is sleeved with at least one blocking cover 24, the blocking cover 24 is sleeved on the electrode 20, the blocking cover 24 moves axially relative to the annular protrusions 11, amorphous silicon powder or other dust generated in the production process of polysilicon rods can be prevented from falling between the electrode 20 and the chassis 10, and is blocked from moving up and down relative to the electrode 20 and the chassis 10, so that the weight of the electrode 20 detected by the weighing sensor 21 is deviated.
Specifically, the annular protrusion 11 is fixed on the top surface of the chassis 10 main body by welding or screwing, one end of the blocking cover 24 is in seamless connection with the side surface of the electrode 20, the distance between the other end of the blocking cover 24 and the top surface of the chassis 10 main body is not smaller than the distance between the electrode 20 and the chassis 10 moving up and down, the distance between the inner top surface of the blocking cover 24 and the top of the annular protrusion 11 is not smaller than the distance between the electrode 20 and the chassis 10 moving up and down, a gap with an L-shaped longitudinal section is formed between the inner side of the blocking cover 24 and the annular protrusion 11, and the gap between the annular protrusion 11 and the blocking cover 24 is communicated with the outside on one side, so that amorphous silicon powder or other dust can be effectively prevented from falling between the electrode 20 and the chassis 10.
In one embodiment, the air inlet assembly 30 further comprises an air inlet main pipe 31, a buffer cavity 33 is arranged between the air inlet main pipe 31 and the air inlet branch pipes 32, and raw material gas is buffered in the buffer cavity 33, so that air flows entering each air inlet branch pipe 32 are more uniform, and the quality of the polysilicon rod is improved.
Further, referring to fig. 4, the main air inlet pipe 31 includes a main air inlet nozzle 34 disposed in the buffer cavity 33, the main air inlet nozzle 34 includes a plurality of buffer covers 341, the plurality of buffer covers 341 are coaxially distributed along the air flow direction, and a group of discharge ports 342 are disposed between two adjacent buffer covers 341, so that the raw material gas coming out of the main air inlet pipe 31 can be dispersed in multiple directions, and the raw material gas coming out of the main air inlet pipe 31 can be prevented from directly impacting in one direction to accelerate the uniform dispersion of the raw material gas in the buffer cavity 33, and the uniformity of the air flow entering each air inlet branch pipe 32 is further improved.
Further, in order to accelerate the dispersion speed of the raw material gas from the main gas inlet pipe 31 in the buffer chamber 33, a plurality of circumferentially distributed dispersion holes are formed in the buffer cover 341, the dispersion holes being not shown in the drawing.
Further, the buffer cover 341 is designed into a reverse-buckled horn shape, and the raw material gas sprayed from the discharge hole 342 is blocked by the buffer cover 341 and is not directly sprayed into the buffer cavity 33, so that the raw material gas is fully and uniformly dispersed in the buffer cavity 33.
In this embodiment, the electrode 20 includes an insulating layer 23 disposed on the outermost layer, and the insulating layer 23 is preferably made of a ceramic material, which has a thermal expansion coefficient close to that of the graphite-made cell 22, so as to facilitate improvement of the structural stability of the electrode 20.
In one embodiment, the control mechanism further includes a controller and a power switch electrically connected to each electrode 20, the controller being communicatively connected to the load cell 21, the feed valve 35, and the power switch, respectively. When the weighing sensor 21 detects that the weight of the corresponding electrode 20 deviates from the range of the normal change rule, the controller sends out a command to a power switch connected with the abnormal electrode 20 in series, the power switch is powered off, the corresponding polycrystalline silicon rod is prevented from continuing to grow, and other polycrystalline silicon rods can grow normally.
The weighing sensor 21 is purchased from the market, the maximum working temperature is 250 ℃, and during production, the chassis 10 is cooled by adopting a water cooling mode (the water cooling mode is the prior art and is not repeated), the bottom temperature of the chassis 10 is reduced below the maximum working temperature of the weighing sensor 21, and the influence of the high Wen Duichen heavy sensor 21 can be avoided by increasing the length of the electrode 20 and the thickness of the chassis 10.
In this embodiment, the reduction furnace includes a furnace cover 40 covering the chassis 10 and an air outlet pipe 41 positioned at the top of the furnace cover 40, and both the chassis 10 and the furnace cover 40 are circular in a top view.
In this embodiment, the electrode 20 is sleeved with the centering member 12, the centering member 12 includes a ball 13 in rolling connection with the electrode 20, the centering member 12 is embedded in the chassis 10, in order to set the centering member 12 on the chassis 10, an annular caulking groove is formed on the chassis 10 around the electrode 20, and at least two annular caulking grooves are provided along the axial direction of each electrode. In order to facilitate the installation of the centering member 12 in the caulking groove, the centering member 12 is formed into a complete circular ring by at least three circular arc-shaped split sections, and each circular arc split section is arranged in the front groove in sequence during the installation. By the action of the centering piece 12, the electrode 20 is limited to move transversely relative to the chassis 10, and the electrode 20 is not limited to move axially relative to the chassis 10, so that the polysilicon is uniformly deposited on the silicon core 50. The bottom of the weighing sensor 21 and the chassis 10 are closed, the raw material gas does not circulate in a gap between the electrode 20 and the chassis 10, the gap between the electrode 20 and the chassis 10 is small, the temperature rise at the bottom of the electrode 20 is not obvious under the action of water cooling, and the normal operation of the weighing sensor 21 is not influenced.
Referring to fig. 5, a method for controlling the feeding of a reduction furnace for producing polycrystalline silicon, in which a weight sensor 21 senses the weight change of each electrode 20 during the production process and feeds back to a controller, when one or more weight of the electrodes 20 exceeds a threshold value of a normal increase rate, the controller controls a feeding valve 35 nearest to an abnormal electrode 20 to be closed or the controller controls a power switch to de-energize the abnormal electrode 20, thereby preventing the silicon rod on the abnormal electrode 20 from continuing to grow and reducing turbulence at the upper end of the silicon rod on the abnormal electrode 20. Under the condition of using the same production parameters and conditions, the growth rule of the polysilicon rod is determined, the weight increasing rate of the polysilicon rod follows the rule, the silicon core 50 is arranged on the electrode 20, and the weight change of the electrode 20 can be sensed and detected through the weighing sensor 21 because the electrode 20 is flexibly connected with the chassis 10, so that the change of the polysilicon rod can be accurately reflected, the controller can give corresponding instructions to control the opening and closing of the feed valve 35, adjust the distribution of the gas field in the reduction furnace and control the power switch in combination, the continuous growth of the polysilicon rod with 'popcorn' is prevented, the generation of 'popcorn' of the polysilicon rod in the whole furnace is reduced, and the waste of raw materials and energy is reduced. In addition, in the growth process of the polysilicon rod, the growth speed before the generation of the 'popcorn' is usually accelerated, namely the weight increase of the polysilicon rod is obviously faster than that of other polysilicon rods which normally grow, the generation of the 'popcorn' can be predicted through the phenomenon, the voltage of the electrode 20 is reduced in advance, the temperature of the silicon core 50 connected with the electrode 20 is reduced, and the generation of the 'popcorn' is avoided.
Those of ordinary skill in the art will appreciate that: the discussion of any of the embodiments above is merely exemplary and is not intended to suggest that the scope of protection of the application is limited to these examples; the technical features of the above embodiments or in the different embodiments may also be combined within the idea of the application, the steps may be implemented in any order and there are many other variations of the different aspects of one or more embodiments of the application as described above, which are not provided in detail for the sake of brevity.
One or more embodiments of the present application are intended to embrace all such alternatives, modifications and variations as fall within the broad scope of the present application. Accordingly, any omissions, modifications, equivalents, improvements and others which are within the spirit and principles of the one or more embodiments of the application are intended to be included within the scope of the application.
Claims (8)
1. A reducing furnace for producing polycrystalline silicon, comprising:
a chassis (10);
a plurality of groups of electrodes (20) arranged on the chassis (10), each electrode (20) is flexibly connected with the chassis (10);
the air inlet assembly (30) is arranged on the chassis (10), the air inlet assembly (30) comprises an air inlet main pipe (31) and a plurality of air inlet branch pipes (32), a buffer cavity (33) is arranged between the air inlet main pipe (31) and the air inlet branch pipes (32), and the air inlet main pipe (31) comprises a main air inlet nozzle (34) arranged in the buffer cavity (33); and
the control mechanism is used for controlling the air intake and/or the electrifying of the control electrode (20), and comprises a plurality of weighing sensors (21) and a plurality of feeding valves (35), wherein each weighing sensor (21) is correspondingly arranged at the bottom of one electrode (20), and each feeding valve (35) is correspondingly arranged on one air inlet branch pipe (32); the control mechanism controls the switch of the feed valve (35) and/or the electrifying of the electrode (20) through the feedback signal of the weighing sensor (21);
the electrode (20) is sleeved with a centering piece (12), the centering piece (12) comprises a ball (13) in rolling connection with the electrode (20), and the centering piece (12) is embedded in the chassis (10);
the control mechanism further comprises a controller and a power switch electrically connected with each electrode (20), and the controller is respectively in communication connection with the weighing sensor (21), the feeding valve (35) and the power switch.
2. The reduction furnace for producing polycrystalline silicon according to claim 1, characterized in that the chassis (10) comprises a plurality of annular projections (11), each annular projection (11) being correspondingly sleeved with one electrode (20), the annular projections (11) being in clearance fit with the electrodes (20), each annular projection (11) being sleeved with at least one blocking cover (24), the blocking cover (24) being sleeved on the electrode (20), the annular projections (11) and the blocking covers (24) being relatively movable in the axial direction.
3. The reduction furnace for producing polycrystalline silicon according to claim 1, characterized in that the main air intake nozzle (34) comprises a plurality of buffer hoods (341), a plurality of the buffer hoods (341) being coaxially distributed along the air flow direction, a group of discharge ports (342) being provided between two adjacent buffer hoods (341).
4. A reducing furnace for producing polycrystalline silicon according to claim 3, characterized in that the buffer cap (341) is provided with a plurality of circumferentially distributed dispersion holes.
5. The reduction furnace for producing polycrystalline silicon according to claim 3 or 4, wherein the buffer cap (341) is horn-shaped.
6. The reduction furnace for producing polycrystalline silicon according to claim 1, characterized in that the electrode (20) comprises an insulating layer (23) provided at the outermost layer.
7. The reduction furnace for producing polycrystalline silicon according to claim 6, characterized in that the insulating layer (23) is made of a ceramic material.
8. A method of controlling the feed of a reduction furnace for producing polycrystalline silicon according to any one of claims 1 to 7, characterized in that the weight sensor (21) senses the weight change of each electrode (20) during the production and feeds back to the controller, when one or more of the electrodes (20) weight exceeds the threshold value of the normal change law, the controller controls the closing of the feed valve (35) nearest to the abnormal electrode (20) or the controller controls the power switch to turn off the abnormal electrode (20) and prevent the silicon rod on the abnormal electrode (20) from continuing to grow, thereby reducing the turbulence at the upper end of the silicon rod on the abnormal electrode (20).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210780398.XA CN115092932B (en) | 2022-07-04 | 2022-07-04 | Reduction furnace for producing polycrystalline silicon and feeding control method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210780398.XA CN115092932B (en) | 2022-07-04 | 2022-07-04 | Reduction furnace for producing polycrystalline silicon and feeding control method |
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| CN115092932B true CN115092932B (en) | 2023-08-22 |
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| CN115092932A (en) | 2022-09-23 |
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