CN105271241B - For producing the reactor of polysilicon - Google Patents

Abstract

The invention discloses a kind of for producing the reactor of polysilicon, it includes the furnace tube containing cooling facility, chassis and electrode, raw material air inlet and exhaust outlet on the chassis, it is characterized in that other than most external is close to the electrode of furnace tube, each electrode have at 150mm ~ 300mm there are four or five other adjacent electrodes air inlet adjacent with one or two and/or exhaust outlet, the dot matrix of the electrode, air inlet and exhaust outlet central point composition is by equilateral triangle and/or approximation equilateral triangle lattice arrangement.The present invention can be realized more dense silicon core arrangement, improves heat utilization rate in reduction furnace, realizes Flow Field Distribution more evenly, to improve the polysilicon yield of every furnace, improve product surface quality, and reduces energy consumption.

Description

For producing the reactor of polysilicon

Technical field

The present invention relates to technical field of polysilicon production, and in particular to one kind is for improveing Siemens process production polysilicon Reduction furnace.

Background technique

Currently, improvement Siemens process is most popular method for preparing polysilicon, described Siemens process principle Be, using high temperature reduction depositing operation, in one of key core equipment --- in belljar (also known as reduction furnace), with The silicon core of the connected 8mm of electrode or so thickness is as deposition substrate, with high-purity SiHCl₃For material, in high-purity H₂It is high in atmosphere Temperature reduction deposits and generates polysilicon.

Described belljar is sealing structure, be connected on the electrode of chassis 5~10mm of diameter, length 1500~ The silicon core of 3000mm, it is fixed by the silicon core print seat (also known as " graphite clamping petal " component) of deck on the electrode, two on each pair of electrode Root silicon rod upper end is connected with each other by a shorter silicon rod, forms inverted U-shaped.Start before depositing silicon, applies 6 on the electrode The high pressure of~12kV or so, silicon core is breakdown conductive and is heated to 1000~1150 DEG C, and after hydrogen reduction, silicon starts on surface Silicon wicking surface deposits to form silicon rod, and with the extension in reaction time, the diameter of silicon rod is gradually increased, and is finally reached the left side 120~200mm It is right.Under normal conditions, it is about 150~300 hours that production diameter, which is the reaction time needed for the high purity silicon rods of 120~200mm,.

In traditional reduction furnace, generally silicon core (or electrode) is arranged by circular concentric, chassis is equipped with raw material Gas inlet and outlet.The Chinese patent of Patent No. ZL200820006917.2 discloses such reduction furnace, wherein in the reduction It is divided to two even circumferentials to arrange 13 pairs of electrodes (corresponding 13 pairs of electrodes) on the chassis of furnace, 8 pairs of electrodes, inner circumferential arrangement 5 are arranged in periphery To electrode, and inlet nozzle is evenly distributed on chassis.This layout improves the utilization rate of reduction furnace inner space, and makes inside and outside It is close to enclose power consumption, compared with 12 pairs of traditional electrodes, the production of polysilicon amount of every furnace is improved, and correspondingly, is produced into This and energy consumption are lowered.

The Chinese patent of Patent No. ZL200820006916.8 also discloses such reduction furnace, wherein in the reduction Point three even circumferentials are arranged 18 pairs of electrodes (corresponding 18 pairs of silicon cores) on the chassis of furnace, 9 pairs of electrodes of outermost one week arrangement, most interior one Arrange that 3 pairs of electrodes, 6 pairs of electrodes of intermediate one week arrangement, inlet nozzle are then evenly distributed on chassis week.This layout can be into One step improves the yield of reduction furnace, and then reduces the production cost and energy consumption of polysilicon.

The Chinese patent of Patent No. ZL200820105591.9 has made further the layout of above-mentioned chassis top electrode pair Improvement.Chassis of reducing furnace disclosed in the patent is still divided into three circumference electrodes pair, but the electrode on each circumference Quantity is both increased, the total amount of electrode pair is made to have reached 24 pairs.Such electrode is to layout so that the polysilicon yield of every furnace It is remarkably enhanced, consequent is being greatly lowered for production cost and energy consumption.

Although above-mentioned electrode facilitates the raising of polysilicon yield and the drop of production cost and energy consumption to circular layout It is low, but there are still defects for this circular concentric layout type.A kind of defect be exactly silicon core by circular arrangement when, adjacent silicon core it Between distance it is different, also have difference in the geometric shape that space is constituted, be unfavorable for gas flowfield in reduction furnace and temperature field It is uniformly distributed, apparent particle occurs in the polycrystalline silicon rod surface that gas flowfield and temperature field unevenly will lead to generation, causes The decline of quality.Another defect is that the silicon core of circular arrangement is not high to the utilization rate in reduction furnace space, and reaction compartment utilizes Rate directly affects the thermal efficiency in the conversion ratio and reactor that will have a direct impact on polysilicon deposition rates, raw material more Crystal silicon production cost.

Therefore, patent 200920282780 is existed using regular polygon geometry arrangement silicon core, and by the setting of raw material air inlet/outlet The geometric center of each regular polygon, to realize that unit chassis area silicon core density is maximum, so that more efficient utilize reduction furnace Yield is improved in interior space, reduces unit power consumption.

Patent 20101014882 discloses a kind of silicon core center and air inlet/outlet forms the reduction of equilateral triangle dot matrix arrangement Furnace realizes more dense silicon core arrangement, improves heat utilization rate in reduction furnace, reduce specific energy consumption, realize more evenly Flow Field Distribution improves raw material and distributes in silicon wicking surface, optimizes product surface pattern.

Although above-mentioned reduction furnace uses regular polygon arrangement silicon core, keep unit chassis area silicon core density maximum, just Polygon geometric center is disposable into and out port, keeps distribution of the material on silicon core more uniform, however, for large-scale reduction furnace (60 pairs of sticks or more) still has following problem to have to be solved: (1) using the reduction furnace of regular polygon dot matrix arrangement, not allowing It easily realizes a point circle, does not also account for silicon core (silicon rod) point circle control problem, cannot achieve the independent control for flowing through each circle silicon core electric current System, that is, cannot achieve flow through it is each circle silicon core electric current it is identical；(2) increase for the silicon rod quantity arranged with regular polygon dot matrix, It is increasingly difficult to observe and measure the growing state and profiling temperatures of inner ring silicon rod from reduction furnace window or thermometer hole, by The heat radiation suffered by reduction furnace inner ring silicon rod is big with respect to outer ring silicon rod, therefore inner ring silicon rod temperature is higher, and reduction furnace Bigger, inner ring silicon rod temperature is higher, thus be easy to happen because can not effective monitoring due to cause inner ring temperature excessively high caused by blowing out Etc. significant problems；(3) using the reduction furnace of regular polygon silicon core arrangement, the silicon core of outmost turns is different from furnace inner wall spacing, low Under the influence of warm wall surface, the silicon rod speed of growth by near wall is slow, causes the silicon rod surface temperature of same circle different, growth morphology It is different.

Summary of the invention

The reduction furnace that technical problem to be solved by the invention is to provide a kind of suitable for producing polysilicon, to solve silicon core Circle control, silicon rod can not be divided to grow the problems such as inhomogenous, reactor heat utilization rate is lower.

Technical scheme is as follows:

It is a kind of for producing the reactor of polysilicon comprising furnace tube, chassis containing cooling facility and be located at described Electrode, raw material air inlet and exhaust outlet on chassis, it is characterised in that other than most external is close to the electrode of furnace tube, each electrode At R ± 0.1R tool there are four or five other adjacent electrodes air inlet adjacent with one or two and/or exhaust outlet, it is described The dot matrix of adjacent electrode, air inlet and/or exhaust outlet central point composition is by equilateral triangle and/or approximate positive triangle form point two-by-two Battle array arrangement, wherein R is selected from 150mm ~ 300mm.

In a preferred embodiment, other than most external is close to the electrode of furnace tube, each electrode is at R ± 0.1R Tool there are four or five other adjacent electrodes air inlet adjacent with one or two and/or exhaust outlet, it is described adjacent two-by-two The dot matrix of electrode, air inlet and/or exhaust outlet central point composition presses equilateral triangle and/or approximate equilateral triangle lattice arrangement, and The chassis is equipped with 66 pairs of electrodes, and wherein R is selected from 150mm ~ 300mm.

In still another preferred embodiment, other than most external is close to the electrode of furnace tube, each electrode is in R ~ 1.1R Place's tool there are four or five other adjacent electrodes air inlet adjacent with one or two and/or exhaust outlet, it is described adjacent two-by-two Electrode, air inlet and/or exhaust outlet central point composition dot matrix by equilateral triangle and/or approximate equilateral triangle lattice arrangement, And centered on each electrode, formed to other adjacent electrodes and adjacent air inlet and/or exhaust outlet direction Angle two-by-two be 50 ~ 70 °, wherein R be selected from 210mm ~ 250mm.

In a highly preferred embodiment, the chassis most external close to furnace tube electrode along the chassis Circle is arranged circumferentially on the same circumference.

The chassis most external close to furnace tube electrode between the furnace tube inner wall at a distance from be 150mm ~ 300mm.

The chassis most external close to furnace tube electrode between the furnace tube inner wall at a distance from be 180mm ~ 230mm.

The air inlet and exhaust outlet is uniformly distributed on the chassis, and each air inlet or exhaust outlet exist With the electrode that at least six is adjacent at R ~ 1.1R.

25 air inlets and/or exhaust outlet are uniformly provided on the chassis.

6 exhaust outlets and 19 air inlets being evenly arranged are uniformly provided on the chassis.

3 exhaust outlets and 22 air inlets being evenly arranged are uniformly provided on the chassis.

The furnace tube includes end socket and stack shell, and the stack shell height is 1.8m ~ 3m.

The mentality of designing on reactor chassis of the present invention are as follows: it is whole using the arrangement design of regular hexagon dot matrix, in regular hexagon Air inlet/outlet is placed at center, so that electrode, air inlet, gas outlet center constitute equilateral triangle dot matrix, it is straight on identical chassis in this way Under diameter, identical silicon rod spacing condition, the silicon core density highest of unit chassis area arrangement can make full use of reduction furnace inner space； Because using regular hexagon matrix arrangement silicon core, most external silicon core can not form circular arrangement, to guarantee that outmost turns silicon core is restored Furnace inner wall influences consistent, optimization outer ring silicon rod growth conditions, outmost turns (may include time outer ring) silicon core position is carried out rounding, i.e., Partial electrode, air inlet, gas outlet center constitute approximate equilateral triangle dot matrix, so that most external silicon core has regular hexagon row Column feature has circle arrangement feature again, that is, maintains every silicon core and receive the homeostasis of inventory, and make outmost turns silicon core The consistency influenced by reduction furnace inner wall, it is ensured that the homogeneity of outer ring silicon rod growth is formed simultaneously inner ring silicon core to external radiation Shielded layer, be effectively reduced heat radiation loss；In addition, passing through creative electrode, the reasonable cloth of air inlet and exhaust outlet Office realizes effective monitoring of point the circle independent control and inner ring silicon rod of electric current, it is ensured that the growth temperature of inner ring silicon rod is in peace Total temperature point hereinafter, avoid because temperature it is excessively high caused by melt problem.

Beneficial effect

1) reduction furnace reactor of the invention for the prior art large size regular polygon arrangement reduction furnace (60 pairs of sticks and with On) there are the problem of be optimized, unique electrode arrangements design method make it easier to realize regular point of circle and Point circle independent control respectively enclosed, while the growing state of inner ring silicon rod can be observed by window, measure the temperature of polycrystalline silicon rod.

2) for reduction furnace reactor of the invention compared with the 60 pairs of sticks or 72 pairs of stick reduction furnaces that regular polygon is arranged, silicon rod is close Degree is more dominant, realizes more dense silicon core electrode arrangement, improves heat utilization rate in reduction furnace, reduce in reduction furnace Idle space reduces heat loss, reduces specific energy consumption, and inhibit side reaction, improves one-way yield.

3) reduction furnace reactor of the invention has carried out rounding due to most external electrode arrangements, i.e., distribution of electrodes is in same circle Zhou Shang is influenced so that the silicon rod being seated on electrode is equidistant apart from reactor furnace tube by the furnace tube with cooling facility It is identical, so that every silicon rod growing environment of outmost turns is identical, compared with regular polygon honeycomb reduction furnace, it is easier to realize silicon Stick growth morphology is uniform.

4) reduction furnace reactor of the invention, it is larger compared with active service pressure reduction furnace, meanwhile, it realizes more evenly Flow Field Distribution, improve raw material in the distribution of silicon wicking surface, optimize rod-like polycrystal silicon product surface pattern, improve polycrystalline Silicon deposition rates shorten sedimentation time, improve reactor production capacity.

Detailed description of the invention

Fig. 1 is the vertical schematic cross-section of reactor of the present invention.

Fig. 2 is dot matrix arrangement schematic diagram of the 66 pairs of stick silicon cores being related to of specific embodiment of the invention reactor on chassis.

Fig. 3 is that 66 pairs of stick silicon cores that specific embodiment of the invention reactor is related to connect in the dot matrix arrangement on chassis and silicon core Connect schematic diagram.

Fig. 4 be the specific embodiment of the invention be related to 66 pairs of bar electrodes of one kind, import and export dot matrix arrangement schematic diagram.

Fig. 5 be the specific embodiment of the invention be related to 66 pairs of bar electrodes of another kind, import and export dot matrix arrangement schematic diagram.

Fig. 6 be the specific embodiment of the invention be related to 36 pairs of bar electrodes of one kind, import and export dot matrix arrangement schematic diagram.

Fig. 7 be the specific embodiment of the invention be related to 36 pairs of bar electrodes of another kind, import and export dot matrix arrangement schematic diagram.

Specific embodiment

Reactor of the invention is described in detail below by way of specific embodiment and in conjunction with attached drawing, but these are implemented Example is only exemplary purpose, it is no intended to carry out any restriction to the scope of the present invention.

Fig. 1 is the vertical schematic cross-section of reactor of the present invention for producing polysilicon.As shown in Figure 1, reactor 1 is main To include bell-jar furnace tube 11, chassis 12, silicon core print seat (electrode) 13, silicon core 14 and crossbeam silicon rod 17, raw material air inlet 15 with And tail gas exhaust outlet 16.Bell-jar furnace tube 11 is fixed on chassis 12 by fixing piece (such as bolt), and mutual shape At sealing.Silicon core print seat (electrode) 13, silicon core 14 and crossbeam silicon rod 17, raw material air inlet 15 and tail gas exhaust outlet 16 are respectively positioned on In the confined space that cylinder 11 and chassis 12 are surrounded.13 deck of silicon core print seat on the electrode, and fixes silicon core 14, and the two of pairing Root silicon core 14 is overlapped by crossbeam 17, forms inverted U-shaped circuit.Further, silicon core print seat 13, air inlet 15 and exhaust outlet 16 are distinguished It is mounted on chassis 12, air inlet 15 is connected with the inlet manifold 20 under chassis 12, exhaust outlet (being called " gas outlet ") 16 and bottom Outlet general pipeline 21 under disk 12 is connected.

2 parts, including end socket 112 and stack shell 111 is made by stainless steel material in bell-jar furnace tube 11, and is equipped with cooling jacket So that cooling medium flows there through, the cooling medium in the present embodiment is water, and temperature is 50 ~ 150 DEG C, in other embodiments, Cooling medium may be conduction oil.End socket can be hemispherical or elliposoidal, and stack shell height is 1.8m ~ 3m, preferably 2.0m ~ 3m, such as 2.2m, 2.4m, 2.5m, 2.6m or 2.8m etc., but not limited to this, it can be any value within the scope of 2.0m ~ 3m.Furnace Cylinder stack shell also contains that there are two observation window and at least one temperature measuring equipment (not shown)s, such as stack shell lower part to be equipped with an observation Window, the growing state of observable silicon rod lower part；Stack shell top also is provided with an observation window and temperature measuring equipment, observable silicon rod top Growing state and monitoring silicon rod crossbeam at temperature.Chassis 12 is equally made of stainless steel material, be equipped with cooling jacket with It is flowed there through for cooling medium.Cooling medium in the present embodiment is water, and temperature is 30 ~ 100 DEG C, cold in other embodiments But medium may be conduction oil.

As shown in Fig. 2, being disposed with 66 pairs i.e. 132 electrode, 13,19 raw material air inlet 15 and 6 tail gas rows on chassis 12 Port 16.It is corresponding, 132 electrodes are uniformly disposed on chassis 12, wherein the central point outside chassis close to furnace tube is along institute The circle for stating chassis is arranged circumferentially on a circumference, and chassis after forming outer ring rounding there is similar regular polygon lattice structure to have again There is the silicon core dot matrix of circular arrangement feature.Rounding, which refers to, slightly adjusts the position of said electrode, so that outmost turns is all Electrode is respectively positioned on the same circumference, i.e., outmost all electrodes are equal at a distance of the position of furnace tube.Central point in the middle part of chassis Circle along the chassis is arranged circumferentially at least one circumference, the point centered on the center chassis, the electrode, air inlet And/or the central point of exhaust outlet by regular hexagon to radial direction rule arrange, regular hexagon center be also uniformly provided with electrode, into Port and/or exhaust outlet, and slightly adjusted close to the external electrode position of furnace tube, i.e., the described electrode, air inlet and exhaust outlet The dot matrix of central point composition by equilateral triangle and/or approximate equilateral triangle lattice arrangement, the central point that inlet and outlet mouth is formed with Adjacent electrode spacing is equal or approximately equal at 150mm ~ 300mm.

The wherein electricity of inside chassis region (part of the close centre circle of inner ring, secondary inner ring and secondary outer ring including electrode) The central point composition equilateral triangle dot matrix of pole, air inlet and exhaust outlet, chassis outer ring, that is, chassis perimeter (including silicon core print seat Outer ring and the part of close the outmost turns of time outer ring) after rounding there is annulus again with similar regular polygon lattice structure Shape arranges the silicon core dot matrix of feature, and specifically, the central point in Fig. 2 on outmost circumference is respectively positioned on the same circumference, the Central point half on two circumference is located on same circumference, the other half is located approximately on same circumference.

The inner ring of the electrode arrangements, secondary inner ring, secondary outer ring and outer ring are as shown in figure 3, Fig. 3 schematically shows this The electrode connection mode of 66 pairs of stick polycrystalline silicon reducing furnaces of invention, the direction of silicon core radially is taken with adjacent silicon core by crossbeam It connects to form inverted U closed circuit.Using the center chassis as the center of circle, four concentric circles from inside to outside schematically show this hair Inner ring, secondary inner ring, secondary outer ring and the outer ring of bright middle electrode arrangements.Wherein inner ring 6 to electrode, secondary inner ring 18 to, secondary outer ring 24 to, Outer ring 18 can be grouped the electric current independent control that three-phase non-equilibrium load realization point circle is formed using 5 ~ 9 power regulating cabinets, example to electrode Threephase load is formed as one group of 6 pairs of electrodes of inner ring and 18 pairs of electrodes of outer ring are divided into two groups (9 pairs of electrodes are one group)；Secondary inner ring 18 pairs be divided into 3 groups (6 pairs electrodes be one group) and form threephase loads；24 pairs of secondary outer ring are divided into 3 groups of (8 pairs of electrodes are one group) shapes At threephase load, point circle independent control of silicon core electric current is so realized, is conducive to individually adjust and be flowed through under different temperatures environment The electric current of silicon rod, to adjust the temperature of silicon rod, avoiding inner ring silicon rod that high temperature fusing is occurred by the influence of heat radiation causes to stop The situation of furnace occurs, and preferably controls the growth morphology and quality of silicon rod.It certainly, more can be light if using more power regulating cabinets Pine nut now divides circle control, such as using six power regulating cabinets, but this undoubtedly will increase equipment investment cost.Meanwhile as shown in Figure 3 The dotted line of vertical direction from observation window it can directly be seen that the case where inner ring silicon rod, can pass through the life that window observes silicon rod Long situation, the temperature for measuring polycrystalline silicon rod avoid unnecessary silicon rod from fusing to guarantee the growth course of effective monitoring silicon rod The production accidents such as blowing out occur.

Adjacent central point in the present invention refers to an arbitrarily selected central point on the chassis, in central point week It encloses at R ± 0.1R the central point (i.e. at 0.9R ~ 1.1R, at preferably R ~ 1.1R) and is known as adjacent central point.Wherein, R is selected from 150mm ~ 300mm, is two interelectrode distances, and preferably R is 210mm ~ 250mm.According to the present invention, except the central point of outmost turns Outside, there is the adjacent central point of at least six around any one central point.Specifically, in addition to 6 centers near secondary outer ring It is adjacent there are there is six outside the central point of 7 adjacent central points and outmost turns, around remaining any central point around point Central point.For example, other than most external is close to the electrode of furnace tube, around each electrode centers point tool there are four or five other Adjacent electrode central point air inlet adjacent with one or two and/or exhaust outlet central point.

Adjacent two-by-two in the present invention refers to each other adjacent relationship two-by-two, i.e. any two central point in three central points It is adjacent relationship.Specifically, central point 131,132,133 as shown in Figure 2, central point 132 and 133 are central points 131 Adjacent center point, central point 131 and central point 133 are the adjacent center points of central point 132, and central point 131 and central point 132 be the adjacent center point of central point 133 again, i.e. central point 131,132,133 is adjacent two-by-two each other, belongs in the present invention two-by-two Adjacent central point.Conversely, when two central points adjacent each other have been determined, then they are each other two-by-two in adjacent third Heart point also accordingly determines, the dot matrix of adjacent three central points composition constitutes equilateral triangle or approximate equilateral triangle two-by-two each other.

Inner ring, all electrodes of secondary inner ring, air inlet, exhaust outlet central point are respectively positioned on positive three on heretofore described chassis On angular dot matrix, and the central point of secondary outer ring and outer ring leads to portion centers point slightly since part fine tuning has carried out rounding Deviate equilateral triangle dot matrix, leading to part, adjacent central point forms the dot matrix mechanism of approximate equilateral triangle two-by-two each other.When When the electrode, air inlet, exhaust outlet central point are respectively positioned on equilateral triangle dot matrix, the distance between adjacent two central point is R； And when the electrode, air inlet, exhaust outlet central point form approximate equilateral triangle dot matrix, the distance between adjacent two central point Within the scope of R ~ 1.1R.Approximate equilateral triangle in the present invention refers to each other the central point of adjacent composition equilateral triangle two-by-two Due to fine tuning so that wherein some central point deviates the approximate equilateral triangle lattice structure that equilateral triangle lattice structure is formed.Pass through After fine tuning, the distance between adjacent two central point R ~ 1.1R is become from original R within the scope of some numerical value, accordingly. Some numerical value that three interior angles of approximate equilateral triangle are become between 50 ° ~ 70 ° from original 60 °, preferably 55 ° ~ 65 °.From another From the point of view of angle, when the electrode, air inlet, exhaust outlet central point form approximate equilateral triangle dot matrix, most external is close to furnace tube Electrode outside, centered on each central point, to other six adjacent centers points (i.e. six adjacent electrodes and Adjacent air inlet and/or exhaust outlet) direction formed angle two-by-two be 60 ° (i.e. six equilateral triangles)；And when the electrode, When air inlet, exhaust outlet central point form approximate equilateral triangle dot matrix, centered on each central point, to described in others The angle two-by-two that six adjacent center point directions are formed is 50 ° ~ 70 °.The angle two-by-two is adjacent to its from a central point Six central point directions six straight lines in the angle between adjacent straight line two-by-two.Such as central point 131 to 132 and 133 in Fig. 2 The angle that two straight lines of two central points are formed.Since central point 131,132,133 is respectively positioned on equilateral triangle dot matrix, The angle is 60 °.

Specifically, as shown in figure 3, Fig. 3 illustratively gives 66 pairs of stick polycrystalline silicon reducing furnace electrode arrangements and the company of Fig. 2 Mode is connect, i.e. the silicon core of chassis top electrode (silicon core print seat) support overlaps composition closed circuit, in this overlap joint, all silicon two-by-two Core print seat can be generally divided into 4 circles (four circles that 4 circles are drawn in such as Fig. 3, but be distributed on the same circumference on stricti jurise 4 circles), i.e. the 6 of innermost circle pair silicon core print seat, 18 pairs of silicon core print seats of secondary inner ring, 18 pairs of 24 pairs of silicon core print seats of secondary outer ring and outer ring Silicon core print seat.Wherein, it is arranged on same circumference after 18 pairs of silicon core print seat roundings of outer ring, 24 pairs of silicon core print seats of secondary outer ring are close to outer ring Silicon core have part not on a circumference, but can approximation on a circumference, i.e., chassis formed outer ring rounding after have it is similar Regular polygon lattice structure has the characteristics that the silicon core dot matrix of circular arrangement again.6 tail gas exhaust outlets are evenly distributed on time outer ring On the central point among secondary inner ring, 19 raw material air inlets are evenly distributed on the center of 6 or 7 silicon core print seats of regular polygon The heart guarantees there is an air inlet or exhaust outlet beside each silicon core print seat in addition to outer ring.This in addition to the silicon rod of outer ring, institute There is silicon core print seat to be all made of radial regular overlapping mode (i.e. from the silicon core print seat of the vertex position of inner ring regular hexagon outward by radial direction Lapping direction overlap silicon core), cooperate the design of air inlet/outlet, may make can see by the visor observation panel of reduction furnace cylinder To the growthform of inner ring silicon rod, convenient for the real time monitoring and production operation of growth course.

As shown in figure 3,66 pairs of ultra-large polycrystalline silicon reducing furnaces of stick of the invention, all electrodes are divided into the distribution of 4 circles, i.e., most 6 pairs of silicon core print seats of inner ring, 18 pairs of silicon core print seats of 18 pairs of silicon core print seats of secondary inner ring, 24 pairs of silicon core print seats of secondary outer ring and outer ring.Wherein, The electrode presses arranged in regular hexagon shape centered on the center on the chassis, and by the hexagonal sampling lattice on vertex altogether towards diameter It arranges to direction, and by the electrode rounding of outmost turns, secondary outer ring electrode position partial adjustment, and it is uniform at the center of regular polygon It arranges air inlet or exhaust outlet, obtains chassis of reducing furnace structure of the invention.So that other than most external is close to the electrode of furnace tube, Each electrode have at R ~ 1.1R there are four or five other adjacent electrodes air inlet adjacent with one or two and/or exhaust Mouthful, the dot matrix of the adjacent electrode two-by-two, air inlet and/or exhaust outlet central point composition by equilateral triangle and/or it is approximate just Triangular lattice arrangement, and the chassis is equipped with 66 pairs of electrodes, wherein R is selected from 150mm ~ 300mm.

In the present invention, the setting of above-mentioned inlet and outlet mouth can evenly distribute, so that being uniformly provided with 25 on the chassis Air inlet and/or exhaust outlet.Such as 6 exhaust outlets and 19 air inlets in Fig. 2, tail gas exhaust outlet are evenly distributed on secondary outer On central point among circle and time inner ring, but not limited to this.Such as it can also be to be uniformly provided on the chassis and be evenly arranged 3 exhaust outlets and 22 air inlets, be equivalent to 3 for being spaced apart from each other 6 exhaust outlets and replace with 3 air inlets, this may Need accordingly to change the cross-sectional area of air inlet or exhaust outlet.Certainly the air inlet of center chassis can also be made into air inlet and The structure of exhaust outlet nested type, this is also within protection scope of the present invention.

As shown in figure 4,6 exhaust outlets and 19 air inlets are uniformly provided on the chassis, wherein 6 exhaust outlets are uniformly set On central point among the outer ring and time outer ring, but not limited to this.Same way, it is also possible to be to be uniformly provided on the chassis uniformly 3 exhaust outlets and 22 air inlets of arrangement, are equivalent to 3 for being spaced apart from each other 6 exhaust outlets and replace with 3 air inlets, this It may need the corresponding cross-sectional area for changing air inlet or exhaust outlet.

As shown in figure 5,6 exhaust outlets and 19 air inlets are uniformly provided on the chassis, wherein 6 exhaust outlets are uniformly set On central point among the inner ring and time inner ring, but not limited to this.Same way, it is also possible to be to be uniformly provided on the chassis uniformly 3 exhaust outlets and 22 air inlets of arrangement, are equivalent to 3 for being spaced apart from each other 6 exhaust outlets and replace with 3 air inlets, this It may need the corresponding cross-sectional area for changing air inlet or exhaust outlet.

In general, exhaust outlet is it is not recommended that be arranged in outmost turns, because logical by largely simulating and testing discovery unstrpped gas It crosses after entering reduction furnace first to rise and decline again, in this gas motion path, reaction gas will necessarily be heated to gas phase Temperature has a large amount of heat, when exhaust outlet is located at outmost turns close to the position of furnace tube inner wall, can increase the negative of furnace tube cooling Lotus, while cannot utilize reaction gas heat well, is unfavorable for energy-saving, but also the power consumption of reduction furnace increases, causes Production of polysilicon increased costs.

Silicon rod quantity on silicon rod density, that is, unit area of the present invention, such as the silicon rod number on the area of unit chassis Amount.The density can be obtained by theoretical calculation, 60 pairs of sticks or 72 of 66 pairs of stick reduction furnaces of the invention and regular polygon arrangement Stick reduction furnace is compared, silicon rod density is more dominant, realizes more dense silicon core electrode arrangement.

It will be appreciated by persons skilled in the art that in actual use, by the small of reduction furnace of the present invention Transformation, such as partial-air admission mouth or exhaust outlet are blocked, also it is able to achieve the similar technical effect of the present invention, it should also of the invention Within protection scope.Equally, such as by more apertures on chassis again increase a pair of electrodes or idle a pair of or two pairs of electrodes, also can Realize the similar technical effect of the present invention, these small transformations cannot be detached from technical concept of the invention, it should also at this Within the protection scope of invention.

According to the more dense silicon core arrangement of the present embodiment, Flow Field Distribution more evenly is realized, reduction is greatly improved Heat utilization rate in furnace reduces idle space in reduction furnace, improves one-way yield.Meanwhile this densely arranged is realized Point circle independent control of polycrystalline silicon rod electric current, improves raw material in the distribution of silicon wicking surface, optimizes rodlike in super large reduction furnace Polysilicon product surface topography, improves polysilicon deposition rates.It can be observed simultaneously by observation window, measurement polycrystalline silicon growth feelings Condition and temperature.

In the present invention, optionally, pairs of silicon core print seat can be 6 multiple, such as 36 pairs, 42 pairs, 48 pairs, 54 pairs, 60 pairs, 66 pairs, 72 pairs, 78 pairs, 84 pairs or 90 pairs, if meet arranging rule of the invention protection scope of the present invention it It is interior.Correspondingly, the quantity of inlet and outlet mouth can increase or reduce according to actual needs, and keep uniformly being arranged in chassis On.

Specifically, 36 pairs of stick polycrystalline silicon reducing furnaces reactor as shown in FIG. 6 can be removed outside by 66 pairs of sticks above-mentioned 30 pairs of sticks, and by most external indentation, there setting air inlet obtain.36 pairs of electrodes 13 are distributed on the chassis, it is equally distributed 18 air inlets 15 and exhaust outlet 16 positioned at center chassis.It is enclosed according to aforementioned inner ring, centre circle and the outer ring three of being broadly divided into Carry out a point circle independent control.Other than most external is close to the electrode of furnace tube, each electrode have at R ± 0.1R there are four or five Other adjacent electrodes air inlet adjacent with one or two and/or exhaust outlet, the adjacent electrode two-by-two, air inlet and/ Or the dot matrix of exhaust outlet central point composition is by equilateral triangle and/or approximate equilateral triangle lattice arrangement, wherein R be selected from 150mm ~ 300mm.Preferably, other than most external is close to the electrode of furnace tube, each electrode have at R ~ 1.1R there are four or five other Adjacent electrode air inlet adjacent with one or two and/or exhaust outlet, adjacent electrode, air inlet and/or the row two-by-two The dot matrix of port central point composition is by equilateral triangle and/or approximate equilateral triangle lattice arrangement, and wherein R is selected from 210mm ~ 250mm.

In a preferred scheme, on the basis of the reduction furnace reactor of Fig. 6, by the most external close to furnace tube Electrode carries out rounding, is located on same circumference, obtains 36 pairs of stick reduction furnace reactors as shown in Figure 7.Equally, in addition to most external Close to furnace tube electrode outside, each electrode have R ± 0.1R at there are four or five others adjacent electrodes and one or two The dot matrix of adjacent air inlet and/or exhaust outlet, the adjacent electrode two-by-two, air inlet and/or exhaust outlet central point composition is pressed Equilateral triangle and/or approximate equilateral triangle lattice arrangement, wherein R is selected from 150mm ~ 300mm.Preferably, in addition to most external is close Outside the electrode of furnace tube, each electrode have at R ~ 1.1R there are four or five other adjacent electrodes it is adjacent with one or two into The dot matrix of port and/or exhaust outlet, the adjacent electrode two-by-two, air inlet and/or exhaust outlet central point composition presses positive triangle Shape and/or approximate equilateral triangle lattice arrangement, wherein R is selected from 210mm ~ 250mm.

Similarly, which realizes more dense silicon core arrangement, realizes flow field point more evenly Cloth greatly improves heat utilization rate in reduction furnace, reduces idle space in reduction furnace, improves one-way yield.Meanwhile it should The densely arranged point circle independent control for realizing the polycrystalline silicon rod electric current in super large reduction furnace, improves raw material in silicon wicking surface Distribution, optimizes rod-like polycrystal silicon product surface pattern, improves polysilicon deposition rates.Can be observed simultaneously by observation window, Measure polycrystalline silicon growth situation and temperature.

According to the present embodiment, the distance between silicon core spacing is more preferably 230mm.The diameter or equivalent diameter of silicon core are preferred It is highly 2.3m for 8mm.Outmost turns silicon core between reduction furnace inner wall at a distance from it is all equal, preferably 200mm, which can The problems such as inhibiting silicon rod growth in outer ring inhomogenous.Optionally, which in other embodiments can also be any suitable for other Distance.

Further, silicon core print seat is made of graphite material.Each silicon core print seat can receive a bar-like silicon core, and silicon core is through under it The vertical insertion silicon core print seat in end, upper end of the upper end of silicon core then with another adjacent silicon core is connected into pairing silicon via connector Core passes through the pairing silicon core to allow to apply electric current.Connector is horizontal positioned silicon rod, and silicon rod is shorter than silicon core.

In this embodiment, the resistivity of silicon core is identical as the resistivity of polysilicon to be produced, and silicon rod and silicon core It is manufactured from the same material.Silicon core and silicon rod can be produced by vertical pulling method, zone-melting process or patterning method, and silicon core and silicon rod can be suitable The arbitrary shape of conjunction.

Although above with reference to attached drawing, the detailed description and description of the specific embodiments of the present invention are given, should refer to Bright, those skilled in the art can carry out various equivalent changes to above embodiment according to the concept of the present invention and repair Change, it, should all be within protection scope of the present invention when the spirit that generated function is still covered without departing from specification.

Claims (7)

1. a kind of for producing the reactor of polysilicon comprising furnace tube, chassis containing cooling facility and be located at the bottom Electrode, raw material air inlet and exhaust outlet on disk, which is characterized in that other than most external is close to the electrode of furnace tube, each electrode At R ± 0.1R tool there are four or five other adjacent electrodes air inlet adjacent with one or two and/or exhaust outlet, it is described The dot matrix of adjacent electrode, air inlet and/or exhaust outlet central point composition is by equilateral triangle and/or approximate positive triangle form point two-by-two Battle array arrangement, and the chassis is equipped with 66 pairs of electrodes, wherein R is selected from the ㎜ of 150 ㎜~300；Three interior angles of approximate equilateral triangle For some numerical value between 50 °~70 °；Centered on chassis, electrode forms inner ring, secondary inner ring, secondary outer ring and outer ring arrangement, Middle inner ring 6 to electrode, secondary inner ring 18 to, secondary outer ring 24 to, outer ring 18 to electrode；In addition to the silicon rod of outer ring, all electrodes are all made of Radial regular overlapping mode；6 exhaust outlets being evenly arranged and 19 air inlets or the bottom are uniformly provided on the chassis 3 exhaust outlets and 22 air inlets being evenly arranged are uniformly provided on disk.

2. according to claim 1 for producing the reactor of polysilicon, which is characterized in that in addition to most external is close to furnace tube Electrode outside, each electrode have at R~1.1R there are four or the air inlet adjacent with one or two of five other adjacent electrodes Mouthful and/or exhaust outlet, the dot matrix of the adjacent electrode two-by-two, air inlet and/or exhaust outlet central point composition press equilateral triangle And/or approximate equilateral triangle lattice arrangement, and centered on each electrode, to other adjacent electrodes and adjacent The angle two-by-two that air inlet and/or exhaust outlet direction are formed is 50 °~70 °, and wherein R is selected from the ㎜ of 210 ㎜~250.

3. according to claim 2 for producing the reactor of polysilicon, which is characterized in that the chassis most external is leaned on The electrode of nearly furnace tube is arranged circumferentially on same circumference along the circle on the chassis.

4. according to claim 3 for producing the reactor of polysilicon, which is characterized in that the chassis most external is leaned on The electrode of nearly furnace tube between the furnace tube inner wall at a distance from be the ㎜ of 150 ㎜~300.

5. according to claim 4 for producing the reactor of polysilicon, which is characterized in that the chassis most external is leaned on Distance of the electrode of nearly furnace tube between the furnace tube inner wall is the ㎜ of 180 ㎜~230.

6. according to claim 5 for producing the reactor of polysilicon, which is characterized in that the air inlet and exhaust Mouth is uniformly distributed on the chassis, and the electricity that each air inlet or exhaust outlet have at least six adjacent in R~1.1R Pole.

7. according to claim 1 for producing the reactor of polysilicon, which is characterized in that the furnace tube includes end socket And stack shell, the stack shell height are 1.8m~3m.