CN106115711A - A kind of polycrystalline silicon reducing furnace - Google Patents
A kind of polycrystalline silicon reducing furnace Download PDFInfo
- Publication number
- CN106115711A CN106115711A CN201610463754.XA CN201610463754A CN106115711A CN 106115711 A CN106115711 A CN 106115711A CN 201610463754 A CN201610463754 A CN 201610463754A CN 106115711 A CN106115711 A CN 106115711A
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- China
- Prior art keywords
- chassis
- electrode
- heater
- raw material
- gas inlet
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
Abstract
A kind of polycrystalline silicon reducing furnace, including chassis and body of heater, described body of heater is the top on chassis, and body of heater is the cylindric reaction chamber adding spherical top；Chassis is discoid, and raw material gas inlet and offgas outlet are distributed on chassis, uniform 30 50 pairs of electrodes on chassis, described half electrode homogeneous vertical on chassis is installed, second half electrode is interspersed for vertically-mounted electrode on lifting electrode, with chassis, and the bottom of lifting electrode is far from chassis 3 10cm；The upper end position of lifting electrode is concordant with spherical top intersection with cylindric, and raw material gas inlet is arranged on chassis by the air inlet pipe of a height of 3 10cm.
Description
One, technical field
The present invention relates to the structure of a kind of polycrystalline silicon reducing furnace.
Two, background technology
The technique of production of polysilicon has the most in the world: improved Siemens, silane thermal decomposition process and fluidized bed process.Wherein improve west
MENZI method is the main technique of current production of polysilicon, the 80% of the Liang Zhan world production of polysilicon total amount of its production polysilicon
[9,11], the most important equipment of this process is polycrystalline silicon reducing furnace, and it is the most electric that its reduction power consumption exceedes whole polysilicon production process
Consumption 60%.Therefore, the fluidal texture in reduction furnace is carried out in-depth study, and then the Novel reducing furnace of exploitation low energy consumption has
Important science and practical value.
In traditional polycrystalline-silicon reducing furnace structure, the import of its unstripped gas and offgas outlet are distributed on chassis, this knot
Structure require nozzle of air supply is set, additionally must control induction air flow ratio reach sufficiently large could realize to reduction furnace top area mixing
The renewal of gas, the shortcoming of this structure maximum is to easily cause reduction furnace top area to produce dead band, owing to top gas can not get
Effectively updating, therefore top area can produce district of localized hyperthermia, and district of this localized hyperthermia can cause the generation of silica flour, and silica flour is very
Being readily adhered to reduction furnace internal face, reduce reduction furnace inner surface heat radiant reflectance, ultimately resulting in reduction power consumption increases.
Novel reducing furnace offgas outlet after existing improvement is distributed on top, and in solving tradition reduction furnace, local temperature is high
Problem, it is to avoid produce silica flour in reduction furnace, tentatively solves the problem that reduction power consumption is too high.But offgas outlet is distributed on top
Structure reduction control on need.
The chassis of reducing furnace electrode improved divides the arrangement of 3 circumference, the silicon rod on each circumference all in arranged in regular hexagon shape, from
Center have the most successively 3 to, 3 to, 6 to equally distributed electrode；Maximum between the most adjacent two electrodes in Novel reducing furnace chassis
Spacing is 220mm；The most adjacent three pairs of silicon rods all constitute a regular hexagon, and each orthohexagonal central distribution an air inlet
Mouthful, its air inlet sum is 13.
In Novel polysilicon reduction furnace, gaseous mixture is essentially all and flows up along silicon rod surface, and this is due to more
Near silicon rod surface, its temperature is the highest, and density is the lowest；Additionally on reduction furnace axial direction, there is also temperature difference, this temperature
Degree difference also makes reactor produce density contrast in the axial direction, and polycrystalline silicon reducing furnace indexes difference rush in the density of varying cross-section plane
Make gaseous mixture from chassis air inlet mouth to the flat push type flowing taking over a business gas outlet.
But the raw material gas inlet of conventional multi-crystalline silicon reduction furnace and offgas outlet are distributed on chassis, this structural requirement is arranged
Nozzle of air supply, additionally must control induction air flow ratio and reach the sufficiently large renewal that could realize reduction furnace top area gaseous mixture,
Therefore the flowing in reduction furnace is substantially complete mixing flow, is the flowing of forced convertion, its axially and radially density contrast on direction
Hinder gaseous mixture on the contrary to flow to the gas outlet on chassis.Make the Density Distribution newer type reduction furnace in tradition reduction furnace more equal
Even.The turnover gas mode of tradition reduction furnace is also easy to cause raw material to make short circuit leave with rage so that unstripped gas not sufficiently reactive just directly from
Gas outlet is discharged, and causes the waste of unstripped gas, affects the sedimentation rate of polysilicon.Relatively new and old reduction furnace, Novel reducing furnace
There is the temperature difference become apparent from Temperature Distribution on the axial direction of reduction furnace, this is due in Novel polysilicon reduction furnace
Flow field is flat push type flowing, and this type of flow can control each position in reduction furnace by the operating condition changing reduction furnace
The temperature put, controlled Temperature Distribution can control the generation of silica flour in reduction furnace, it is to avoid silica flour is because being attached to reduction furnace
Destroy the burnishing surface of reduction furnace inwall on internal face, the burnishing surface of reduction furnace internal face can be preserved for a long time, add inwall
In the face of the thermal-radiating reflection of high temperature silicon rod, thus reduce the reduction power consumption of reduction furnace；And the flow field in tradition reduction furnace is complete
Mixed flow, its Temperature Distribution is more uniform, and this type of flow can not efficiently control the temperature in reduction furnace, therefore in reduction furnace
Easily producing localized high temperature regions, this localized high temperature regions can produce silica flour, and silica flour is readily adhered to reduction furnace inwall
The surface in face, causes the generation of reduction furnace internal face localized hyperthermia's point, and this localized hyperthermia's point can cause again the attached of more silica flour
, finally destroy the burnishing surface of reduction furnace internal face, thus add the reduction power consumption of reduction furnace.
Three, summary of the invention
The present invention seeks to, propose the structure of a kind of polycrystalline silicon reducing furnace.Use the lifting electrode of cross-distribution, improve
The uniformity of material distribution in stove, is easily controlled the temperature of reduction furnace each position interior, reduces power consumption and also ensures product quality.
The technical scheme is that a kind of polycrystalline silicon reducing furnace is characterized in that including: chassis and body of heater, described body of heater
For the top on chassis, body of heater is the cylindric reaction chamber adding spherical top；Chassis is discoid, raw material gas inlet and offgas outlet
Being distributed on chassis, it is characterized in that on chassis, uniform 30-50 is to electrode, described half electrode homogeneous vertical on chassis is installed,
Second half electrode is interspersed for vertically-mounted electrode on lifting electrode, with chassis, and the bottom of lifting electrode is far from chassis 3-10cm；
The upper end position of lifting electrode is concordant with spherical top intersection with cylindric, and raw material gas inlet is by the air inlet pipe of a height of 3-10cm
It is arranged on chassis.
On the circumference of the different radii that raw material gas inlet and offgas outlet are distributed on chassis, cloth on the circumference of a radius
When putting raw material gas inlet, the circumference of adjacent radius is arranged offgas outlet.
The stake body of concordant lifting electrode drawn by the cylindric titanium pad that clamps with spherical top intersection of body of heater, and titanium pad is drawn
Titanium framework body for angle titanium-type material.
Beneficial effect, although it is old-fashioned reduction furnace structure that the present invention looks, but the installation of lifting electrode significantly improves
The uniformity of material distribution in stove, is easily controlled the temperature of each position in reduction furnace easily by the applying of unstripped gas etc., can
The Temperature Distribution of control can control the generation of silica flour in reduction furnace, it is to avoid silica flour breaks because being attached on the internal face of reduction furnace
The burnishing surface of bad reduction furnace inwall, can preserve the burnishing surface of reduction furnace internal face for a long time, add internal face (be silver-plated,
The most hemispheric dome is conducive to the uniform balance of growth and tail gas stream) reflection thermal-radiating to high temperature silicon rod, thus drop
The low reduction power consumption of reduction furnace；Temperature Distribution is more uniform, and this type of flow of the present invention can efficiently control in reduction furnace
Temperature, localized high temperature regions will not be produced, the reduction power consumption of reduction furnace is lower than prior art.The especially growth quality of silicon rod
More easy to control.Owing to the alternatively distributed effect being alternately distributed and passing in and out gas of lifting electrode is more preferable, more improve material in stove
The uniformity of distribution.
Four, accompanying drawing explanation
Fig. 1 is present configuration schematic diagram.
Fig. 2 is the chassis top view of stove of the present invention.
Five, detailed description of the invention
As it can be seen, furnace bottom 1 in figure, electrode suppor 2, stove foot 3, furnace wall 4, gas outlet 5, air inlet pipe 6, sight glass 7,9, stove
The standby gas outlet of wall 8, air inlet pipe mounting disc 10, electrode 11, lifting electrode 12, lifting electrode installation site 13, lifting electrode peace
Dress support 14, hemisphere top furnace chamber 15.
The present invention includes: chassis and body of heater, and described body of heater is the top on chassis, and body of heater is the cylindric reaction adding spherical top
Chamber；Chassis is discoid, and raw material gas inlet and offgas outlet are distributed on chassis, on chassis uniform 30-50 to electrode (depending on stove
The size of body, also includes lifting electrode), described half electrode homogeneous vertical on chassis is installed, and second half electrode is lifting electricity
On pole, with chassis, vertically-mounted electrode is interspersed, and the bottom of lifting electrode is far from chassis 3-10cm, especially 5-6cm；Lifting electricity
The upper end position of pole is concordant with spherical top intersection with cylindric, and raw material gas inlet is by a height of 3-10cm, especially 5-6cm
Air inlet pipe is arranged on chassis.The distance of adjacent raw material gas inlet is 8-12cm, air inlet pipe 6 straight that raw material gas inlet is installed
Footpath is 4-6mm；
Furnace wall internal face is silver-plated, reflection thermal-radiating to high temperature silicon rod, and electrode 11, lifting electrode 12 are peace in pairs
Dress；
On the circumference of the different radii that raw material gas inlet and offgas outlet are distributed on chassis, cloth on the circumference of a radius
When putting raw material gas inlet, the circumference of adjacent radius is arranged offgas outlet.The interval that the radius of adjacent circumferential increases is permissible
Being identical, or radius is the biggest, the interval that radius increases is smaller.
The stake body of concordant lifting electrode drawn by the cylindric titanium pad that clamps with spherical top intersection of body of heater, and titanium pad is drawn
Titanium framework body for angle titanium-type material.
Claims (3)
1. a polycrystalline silicon reducing furnace, is characterized in that including: chassis and body of heater, and described body of heater is the top on chassis, and body of heater is circle
Column adds the reaction chamber of spherical top；Chassis is discoid, and raw material gas inlet and offgas outlet are distributed on chassis, it is characterized in that
On chassis, uniform 30-50 is to electrode, and described half electrode homogeneous vertical on chassis is installed, and second half electrode is lifting electrode,
Vertically-mounted electrode is interspersed with on chassis, and the bottom of lifting electrode is far from chassis 3-10cm；Lifting electrode upper end position with
Cylindric concordant with spherical top intersection, raw material gas inlet is arranged on chassis by the air inlet pipe of a height of 3-10cm.
Polycrystalline silicon reducing furnace the most according to claim 1, is characterized in that raw material gas inlet and offgas outlet are distributed on chassis
Different radii circumference on, on the circumference of a radius arrange raw material gas inlet time, cloth on the circumference of adjacent radius
Put offgas outlet.
Polycrystalline silicon reducing furnace the most according to claim 1, is characterized in that body of heater is cylindric and clamps titanium with spherical top intersection
The stake body of concordant lifting electrode drawn by pad, titanium pad draw titanium framework body for angle titanium-type material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610463754.XA CN106115711B (en) | 2016-06-23 | 2016-06-23 | A kind of polycrystalline silicon reducing furnace |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610463754.XA CN106115711B (en) | 2016-06-23 | 2016-06-23 | A kind of polycrystalline silicon reducing furnace |
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| CN106115711A true CN106115711A (en) | 2016-11-16 |
| CN106115711B CN106115711B (en) | 2018-06-29 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107720756A (en) * | 2017-11-03 | 2018-02-23 | 亚洲硅业（青海）有限公司 | A kind of polycrystalline silicon reducing furnace |
| CN112624119A (en) * | 2020-12-30 | 2021-04-09 | 湖南三安半导体有限责任公司 | Silicon carbide powder, preparation method and application thereof, and reaction device |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6063370A (en) * | 1983-09-16 | 1985-04-11 | Hitachi Koki Co Ltd | Apparatus for manufacturing amorphous silicon hydride |
| JPH06172092A (en) * | 1992-12-10 | 1994-06-21 | Koujiyundo Silicon Kk | Reactional furnace for producing semiconductor-grade polycrystalline silicon |
| CN201105991Y (en) * | 2007-10-23 | 2008-08-27 | 四川永祥多晶硅有限公司 | Polycrystalline silicon hydrogen reducing furnace |
| CN201105990Y (en) * | 2007-10-23 | 2008-08-27 | 四川永祥多晶硅有限公司 | Polycrystalline silicon hydrogen reducing furnace |
| CN201473328U (en) * | 2009-08-10 | 2010-05-19 | 上海森和投资有限公司 | Tail gas outlet structure of polysilicon hydrogen reducing furnace |
| CN201512418U (en) * | 2009-09-24 | 2010-06-23 | 上海森松压力容器有限公司 | Polycrystalline silicon reducing furnace |
| CN104724705A (en) * | 2015-03-27 | 2015-06-24 | 中国恩菲工程技术有限公司 | Chassis assembly for polycrystalline silicon reduction furnace |
-
2016
- 2016-06-23 CN CN201610463754.XA patent/CN106115711B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6063370A (en) * | 1983-09-16 | 1985-04-11 | Hitachi Koki Co Ltd | Apparatus for manufacturing amorphous silicon hydride |
| JPH06172092A (en) * | 1992-12-10 | 1994-06-21 | Koujiyundo Silicon Kk | Reactional furnace for producing semiconductor-grade polycrystalline silicon |
| CN201105991Y (en) * | 2007-10-23 | 2008-08-27 | 四川永祥多晶硅有限公司 | Polycrystalline silicon hydrogen reducing furnace |
| CN201105990Y (en) * | 2007-10-23 | 2008-08-27 | 四川永祥多晶硅有限公司 | Polycrystalline silicon hydrogen reducing furnace |
| CN201473328U (en) * | 2009-08-10 | 2010-05-19 | 上海森和投资有限公司 | Tail gas outlet structure of polysilicon hydrogen reducing furnace |
| CN201512418U (en) * | 2009-09-24 | 2010-06-23 | 上海森松压力容器有限公司 | Polycrystalline silicon reducing furnace |
| CN104724705A (en) * | 2015-03-27 | 2015-06-24 | 中国恩菲工程技术有限公司 | Chassis assembly for polycrystalline silicon reduction furnace |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107720756A (en) * | 2017-11-03 | 2018-02-23 | 亚洲硅业（青海）有限公司 | A kind of polycrystalline silicon reducing furnace |
| CN112624119A (en) * | 2020-12-30 | 2021-04-09 | 湖南三安半导体有限责任公司 | Silicon carbide powder, preparation method and application thereof, and reaction device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106115711B (en) | 2018-06-29 |
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