CN110255565A - A kind of large size chassis of reducing furnace - Google Patents

A kind of large size chassis of reducing furnace Download PDF

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Publication number
CN110255565A
CN110255565A CN201910601259.4A CN201910601259A CN110255565A CN 110255565 A CN110255565 A CN 110255565A CN 201910601259 A CN201910601259 A CN 201910601259A CN 110255565 A CN110255565 A CN 110255565A
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CN
China
Prior art keywords
chassis
electrode hole
feed nozzle
hole
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
CN201910601259.4A
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Chinese (zh)
Inventor
赵建
盛斌
朱敏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SHUANGLIANG NEW ENERGY EQUIPMENT CO Ltd
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SHUANGLIANG NEW ENERGY EQUIPMENT CO Ltd
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Publication date
Application filed by SHUANGLIANG NEW ENERGY EQUIPMENT CO Ltd filed Critical SHUANGLIANG NEW ENERGY EQUIPMENT CO Ltd
Priority to CN201910601259.4A priority Critical patent/CN110255565A/en
Publication of CN110255565A publication Critical patent/CN110255565A/en
Withdrawn legal-status Critical Current

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    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/02Silicon
    • C01B33/021Preparation
    • C01B33/027Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)

Abstract

The present invention relates to a kind of large-scale chassis of reducing furnace, including electrode hole, feed nozzle and tail gas hole, the electrode hole, feed nozzle and tail gas hole and chassis flange, chassis panel etc. is together to form chassis of reducing furnace, the feed nozzle includes an interior feed nozzle and four circle feed nozzles, the interior feed nozzle is located at the center on chassis, the four circles feed nozzle is distributed in above chassis in a ring, the electrode hole is successively arranged 7 circle electrode holes along center chassis outward, interior 4 circle electrode hole correlation is distributed in regular hexagon, outer 3 circle electrode hole correlation is in concentric circles, the tail gas hole is located at chassis outermost.The present invention integrates the various heats generated during reduction reaction, rationally utilizes the heat radiation between silicon rod, the heat transfer of cold and hot material, and effectively control atomization promotes conversion ratio of polysilicon to 11% ~ 12%;Polysilicon deposition speed is promoted to 160 ~ 180kg/h, reduction power consumption is reduced to 35kw/kg-Si, production of polysilicon cost is greatly reduced.

Description

A kind of large size chassis of reducing furnace
Technical field
The present invention relates to improved Siemens to produce field polysilicon, and in particular to a kind of large size chassis of reducing furnace.
Background technique
Improved Siemens production polysilicon is mainstream mature technology that is domestic, producing polysilicon in the world, wherein restoring Furnace is the core equipment of the technique, and reduction power consumption accounts for 65% or so of production of polysilicon power consumption, so the performance of reduction furnace is often determined The advance of polysilicon production process is determined.It is domestic at present mainly to produce polysilicon using 36 pairs of sticks, 40 pairs of stick reduction furnaces, these The yield of the type of furnace is relatively low, and energy consumption is also relatively high, and the more large-scale reduction furnace in part is in actual use, and because of Thermal field, gas field in furnace are unevenly distributed, and cause atomization serious, material consumption energy consumption increases.
Therefore to solve the above problems, exploitation is larger, more energy efficient, more reasonable reduction furnace is extremely urgent, to also The various heats generated in former reaction process are integrated, reasonable to carry out chassis arrangement, further decrease reduction furnace operation at This parameter promotes domestic polysilicon industrial competition.
Summary of the invention
The purpose of the present invention is to overcome the above shortcomings and to provide a kind of large-scale chassis of reducing furnace, to solve existing reduction Furnace output is low, and power consumption is high, and thermal field is uneven, is atomized the problems such as serious.
The object of the present invention is achieved like this:
A kind of large size chassis of reducing furnace, including electrode hole, feed nozzle and tail gas hole, the electrode hole, feed nozzle and tail gas Hole and chassis flange, chassis panel etc. are together to form chassis of reducing furnace, the feed nozzle include an interior feed nozzle and Four circle feed nozzles, the interior feed nozzle are located at the center on chassis, and the four circles feed nozzle is distributed on chassis in a ring Face, the electrode hole are successively arranged 7 circle electrode holes along center chassis outward, and interior 4 circle electrode hole correlation is in regular hexagon point Cloth, outer 3 circle electrode hole correlation is in concentric circles, and the tail gas hole is located at chassis outermost.
Preferably, the order of the four circles feed nozzle from inside to outside is the first feed nozzle, the second feed nozzle, third Feed nozzle and the 4th feed nozzle, the first feed nozzle quantity are 6, and the second feed nozzle quantity is 6, institute Stating third feed nozzle quantity is 12, and the 4th feed nozzle quantity is 12.
Preferably, the 7 circle electrode hole is respectively first electrode hole, second electrode hole, third electrode hole, the 4th electrode Hole, the 5th electrode hole, the 6th electrode hole, the 7th electrode hole, the first electrode hole number are 6, and second electrode hole number is 6 A, third electrode hole number is 12, and the 4th electrode hole number is 12, and the 5th electrode hole number is 28, the 6th electrode hole Quantity is 36, and the 7th electrode hole number is 44.
Preferably, the electrode hole of interior 4 circle overlaps, outer 3 when installing silicon core crossbeam using across two adjacent electrode holes of circle The electrode hole of circle uses the two neighboring electrode hole overlap joint with circle.
Preferably, adjacent electrode hole distance is 200mm-250mm.
The beneficial effects of the present invention are:
The present invention integrates the various heats generated during reduction reaction, cold and hot rationally using the heat radiation between silicon rod The heat transfer of material, effectively control atomization promote conversion ratio of polysilicon to 11% ~ 12%;Promote polysilicon deposition speed extremely 160 ~ 180kg/h reduces reduction power consumption to 35kw/kg-Si, production of polysilicon cost is greatly reduced.
Detailed description of the invention
Fig. 1 is the structural diagram of the present invention.
Wherein: chassis 1;7th electrode hole 2;Tail gas hole 3;4th feed nozzle 4;6th electrode hole 5;5th electrode hole 6; Third feed nozzle 7;4th electrode hole 8;Second feed nozzle 9;Third electrode hole 10;Second electrode hole 11;First charging spray Mouth 12;Interior feed nozzle 13;First electrode hole 14.
Specific embodiment
Referring to Fig. 1, the present invention relates to a kind of large-scale chassis of reducing furnace, including electrode hole, feed nozzle and tail gas hole 3, institutes It states electrode hole, feed nozzle and tail gas hole and chassis flange, chassis panel etc. and is together to form chassis of reducing furnace, the charging spray Mouth includes an interior feed nozzle 13 and four circle feed nozzles, and the interior feed nozzle 13 is located at the center on chassis 1, four circle Feed nozzle is distributed in a ring above chassis 1, and the electrode hole is successively arranged 7 circle electrode holes along 1 center of chassis outward, and interior 4 It encloses electrode hole correlation to be distributed in regular hexagon, outer 3 circle electrode hole correlation is in concentric circles, and the tail gas hole 3 is located at bottom 1 outermost of disk, annular are evenly equipped with 8.
The 7 circle electrode hole is respectively first electrode hole 14, second electrode hole 11, third electrode hole 10, the 4th electrode hole 8, the 5th electrode hole 6, the 6th electrode hole 5, the 7th electrode hole 2.The One On The Chassis electrode hole sum is 144, wherein first electrode 14 quantity of hole is 6, and 11 quantity of second electrode hole is 6, and 10 quantity of third electrode hole is 12, and 8 quantity of the 4th electrode hole is 12,6 quantity of the 5th electrode hole is 28, and 5 quantity of the 6th electrode hole is 36, and 2 quantity of the 7th electrode hole is 44.
The order of the four circles feed nozzle from inside to outside is the first feed nozzle 12, the second feed nozzle 9, third charging Nozzle 7 and the 4th feed nozzle 4,12 quantity of the first feed nozzle are 6, are located at first electrode hole 14, second electrode hole 11, the regular hexagon center that third electrode hole 10 forms;Second feed nozzle, 9 quantity is 6, is located at third electrode hole 10 Among 8 liang of circle electrode holes of the 4th electrode hole;7 quantity of third feed nozzle is 12, is located at the 5th electrode hole 6 and the 6th Among 5 liang of circle electrode holes of electrode hole;4th feed nozzle, 4 quantity is 12, is located at the 6th electrode hole 5 and the 7th electrode hole Among 2 liang of circle electrode holes.
The electrode hole of interior 4 circle is overlapped when installing silicon core crossbeam using across two adjacent electrode holes of circle, the electricity of outer 3 circle Pole hole uses the two neighboring electrode hole overlap joint with circle.
Adjacent electrode hole distance (electrode spacing) uses 230mm, and can adjust within the scope of 200mm-250mm.
In addition to the implementation, all to use equivalent transformation or equivalent replacement the invention also includes there is an other embodiments The technical solution that mode is formed should all be fallen within the scope of the hereto appended claims.

Claims (5)

1. a kind of large size chassis of reducing furnace, including electrode hole, feed nozzle and tail gas hole (3), the electrode hole, feed nozzle and Tail gas hole and chassis flange, chassis panel etc. are together to form chassis of reducing furnace, it is characterised in that: the feed nozzle includes one A interior feed nozzle (13) and four circle feed nozzles, the interior feed nozzle (13) are located at the center on chassis (1), described four enclose into Material nozzle is distributed in chassis (1) above in a ring, and the electrode hole is successively arranged 7 circle electrode holes along chassis (1) center outward, interior 4 circle electrode hole correlations are distributed in regular hexagon, and outer 3 circle electrode hole correlation is in concentric circles, and the tail gas hole (3) is located at Chassis (1) outermost.
2. a kind of large-scale chassis of reducing furnace according to claim 1, it is characterised in that: described four enclose feed nozzle from introversion Outer order is the first feed nozzle (12), the second feed nozzle (9), third feed nozzle (7) and the 4th feed nozzle (4), First feed nozzle (12) quantity is 6, and the second feed nozzle (9) quantity is 6, the third feed nozzle (7) quantity is 12, and the 4th feed nozzle (4) quantity is 12.
3. a kind of large-scale chassis of reducing furnace according to claim 1, it is characterised in that: the 7 circle electrode hole is respectively the One electrode hole (14), second electrode hole (11), third electrode hole (10), the 4th electrode hole (8), the 5th electrode hole (6), the 6th electricity Pole hole (5), the 7th electrode hole (2), first electrode hole (14) quantity are 6, and second electrode hole (11) quantity is 6, the Three electrode holes (10) quantity is 12, and the 4th electrode hole (8) quantity is 12, and the 5th electrode hole (6) quantity is 28, the 6th electricity Pole hole (5) quantity is 36, and the 7th electrode hole (2) quantity is 44.
4. a kind of large-scale chassis of reducing furnace according to claim 1, it is characterised in that: the electrode hole of interior 4 circle is in installation silicon When core crossbeam, using across adjacent two electrode holes overlap joint is enclosed, the electrode holes of outer 3 circle are used to be taken with the two neighboring electrode hole of circle It connects.
5. a kind of large-scale chassis of reducing furnace according to claim 4, it is characterised in that: adjacent electrode hole distance is 200mm- 250mm。
CN201910601259.4A 2019-07-05 2019-07-05 A kind of large size chassis of reducing furnace Withdrawn CN110255565A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910601259.4A CN110255565A (en) 2019-07-05 2019-07-05 A kind of large size chassis of reducing furnace

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201910601259.4A CN110255565A (en) 2019-07-05 2019-07-05 A kind of large size chassis of reducing furnace

Publications (1)

Publication Number Publication Date
CN110255565A true CN110255565A (en) 2019-09-20

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CN201910601259.4A Withdrawn CN110255565A (en) 2019-07-05 2019-07-05 A kind of large size chassis of reducing furnace

Country Status (1)

Country Link
CN (1) CN110255565A (en)

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06172092A (en) * 1992-12-10 1994-06-21 Koujiyundo Silicon Kk Reactional furnace for producing semiconductor-grade polycrystalline silicon
US20110151137A1 (en) * 2009-12-17 2011-06-23 Vithal Revankar Method of gas distribution and nozzle design in the improved chemical vapor deposition of polysilicon reactor
CN102417181A (en) * 2011-09-15 2012-04-18 中国恩菲工程技术有限公司 Polycrystal silicon reduction furnace with novel nozzles
CN102936013A (en) * 2012-11-19 2013-02-20 中国恩菲工程技术有限公司 Polycrystalline silicon reduction furnace
CN202988738U (en) * 2012-11-19 2013-06-12 中国恩菲工程技术有限公司 Polycrystalline silicon reduction furnace
CN103328380A (en) * 2011-01-21 2013-09-25 信越化学工业株式会社 Apparatus for manufacturing polycrystalline silicon and method for manufacturing polycrystalline silicon
CN105271241A (en) * 2014-06-26 2016-01-27 江苏中能硅业科技发展有限公司 Reactor used for producing polycrystalline silicon
CN206735808U (en) * 2016-11-16 2017-12-12 上海韵申新能源科技有限公司 A kind of polycrystalline silicon reduction furnace base plate
CN108557824A (en) * 2017-04-01 2018-09-21 上海韵申新能源科技有限公司 A kind of gas phase controllable type polycrystalline silicon reducing furnace
CN210367009U (en) * 2019-07-05 2020-04-21 江苏双良新能源装备有限公司 Large-scale reduction furnace chassis

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06172092A (en) * 1992-12-10 1994-06-21 Koujiyundo Silicon Kk Reactional furnace for producing semiconductor-grade polycrystalline silicon
US20110151137A1 (en) * 2009-12-17 2011-06-23 Vithal Revankar Method of gas distribution and nozzle design in the improved chemical vapor deposition of polysilicon reactor
CN102140678A (en) * 2009-12-17 2011-08-03 维塞尔·雷万卡 Method, device and CVD-Siemens system for producing uniform polysilicon rod
CN103328380A (en) * 2011-01-21 2013-09-25 信越化学工业株式会社 Apparatus for manufacturing polycrystalline silicon and method for manufacturing polycrystalline silicon
US20130302528A1 (en) * 2011-01-21 2013-11-14 Shin-Etsu Chemical Co., Ltd. Apparatus for producing polycrystalline silicon and method for producing polycrystalline silicon
CN102417181A (en) * 2011-09-15 2012-04-18 中国恩菲工程技术有限公司 Polycrystal silicon reduction furnace with novel nozzles
CN102936013A (en) * 2012-11-19 2013-02-20 中国恩菲工程技术有限公司 Polycrystalline silicon reduction furnace
CN202988738U (en) * 2012-11-19 2013-06-12 中国恩菲工程技术有限公司 Polycrystalline silicon reduction furnace
CN105271241A (en) * 2014-06-26 2016-01-27 江苏中能硅业科技发展有限公司 Reactor used for producing polycrystalline silicon
CN206735808U (en) * 2016-11-16 2017-12-12 上海韵申新能源科技有限公司 A kind of polycrystalline silicon reduction furnace base plate
CN108557824A (en) * 2017-04-01 2018-09-21 上海韵申新能源科技有限公司 A kind of gas phase controllable type polycrystalline silicon reducing furnace
CN210367009U (en) * 2019-07-05 2020-04-21 江苏双良新能源装备有限公司 Large-scale reduction furnace chassis

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