CN213713975U

CN213713975U - Chassis of 70-pair-rod polycrystalline silicon reduction furnace

Info

Publication number: CN213713975U
Application number: CN202022501563.2U
Authority: CN
Inventors: 盛斌; 詹水华; 缪炳; 文德育
Original assignee: Shuangliang New Energy Equipment Co ltd
Current assignee: Shuangliang New Energy Equipment Co ltd
Priority date: 2020-11-03
Filing date: 2020-11-03
Publication date: 2021-07-16
Anticipated expiration: 2030-11-03

Abstract

The utility model relates to a 70 to excellent polycrystalline silicon reduction furnace chassis, including chassis flange, chassis panel, center tail gas pocket, electrode hole, feed nozzle and outer lane tail gas pocket distribute on the chassis panel according to the designing requirement, constitute the reduction furnace chassis jointly with chassis flange, chassis panel, center tail gas pocket is located the center of chassis panel, outwards is equipped with 5 rings of electrode holes in proper order along the center of chassis panel, and each ring of electrode hole is concentric circles, feed nozzle is equipped with 4 rings, and each ring of feed nozzle sets up between adjacent two rings of electrode holes, outer lane tail gas pocket distributes at the outermost circle of chassis panel according to the annular. The utility model discloses integrate the various heats that produce among the reduction reaction process, the heat radiation between make full use of silicon rod reduces the power consumption under the prerequisite that effectively improves the reducing furnace single-furnace productivity, promotes the quality, provides a stable large-scale polycrystalline silicon reducing furnace to reduce polycrystalline silicon manufacturing cost by a wide margin.

Description

Chassis of 70-pair-rod polycrystalline silicon reduction furnace

Technical Field

The utility model relates to the technical field of polycrystalline silicon production by an improved Siemens method, in particular to a chassis of a 70-pair rod polycrystalline silicon reduction furnace.

Background

The improved Siemens method for producing the polycrystalline silicon is a mainstream mature process for producing the polycrystalline silicon at home and abroad: the method is characterized in that high-purity trichlorosilane is used as a raw material and is reduced by high-purity hydrogen on a high-purity silicon core at the temperature of about 1100 ℃, and the silicon core grows simple substance silicon under the condition of high-temperature heating to obtain a polycrystalline silicon rod-shaped product, wherein a reducing furnace is core equipment of the process.

The most mature of the current applications are 40 pairs of rod reduction furnaces, and a small fraction of 72 pairs of rod reduction furnaces. But the production of 40 pairs of rods is relatively low and the power consumption is relatively high; while 72 is less stable to rod operation and product quality is poor. Therefore, in order to solve the problems, a large-scale high-yield energy-saving reduction furnace is needed to be developed, the chassis arrangement is reasonably carried out, the heat radiation is fully utilized, the operation power consumption of the reduction furnace is further reduced, and the competitiveness of the domestic polycrystalline silicon industry is improved.

SUMMERY OF THE UTILITY MODEL

The utility model aims to overcome the defects and provide a chassis of a 70-pair rod polycrystalline silicon reduction furnace to solve the problems of low yield, high power consumption and the like of the existing reduction furnace.

The purpose of the utility model is realized like this:

the utility model provides a 70 to excellent polycrystalline silicon reduction furnace chassis, includes chassis flange, chassis panel, central tail gas pocket, electrode hole, feed nozzle and outer lane tail gas pocket distribute on the chassis panel according to the design requirement, constitute the reduction furnace chassis jointly with chassis flange, chassis panel, central tail gas pocket is located the center of chassis panel, outwards is equipped with 5 ring electrode holes in proper order along the center of chassis panel, and each ring electrode hole is concentric circles, feed nozzle is equipped with 4 rings, and each ring feed nozzle sets up between adjacent two ring electrode holes, outer lane tail gas pocket distributes at the outermost circle of chassis panel according to the annular.

Preferably, the number of the ring electrode holes is 12, 20, 28, 36 and 44 respectively from inside to outside.

Preferably, the number of the feeding nozzles of each ring is 6, 12 and 16 respectively from inside to outside.

Preferably, the electrode holes of each ring are overlapped by two adjacent electrode holes of the same circle.

Preferably, the distance between two adjacent electrode holes is adjusted between 200 mm and 250 mm.

Preferably, the distance between two adjacent electrode holes is 235 mm.

Preferably, the distance between the center of each electrode hole of the outermost circle and the inner wall of the furnace barrel of the reduction furnace is equal.

The utility model has the advantages that:

the utility model discloses integrate the various heats that produce among the reduction reaction process, the heat radiation between make full use of silicon rod reduces the power consumption under the prerequisite that effectively improves the reducing furnace single-furnace productivity, promotes the quality, provides a stable large-scale polycrystalline silicon reducing furnace, and equipment investment is low, and the operation degree of difficulty is little to reduce polycrystalline silicon manufacturing cost by a wide margin.

Drawings

Fig. 1 is a schematic structural diagram of the present invention.

Wherein: 1. a chassis flange; 2. a chassis panel; 3. a central tail gas hole; 4. an electrode hole; 5. a feed nozzle; 6. and an outer ring tail gas hole.

Detailed Description

Referring to fig. 1, the utility model relates to a 70-pair-rod polycrystalline silicon reduction furnace chassis, which comprises a chassis flange 1, a chassis panel 2, a central tail gas hole 3, electrode holes 4, feeding nozzles 5 and an outer ring tail gas hole 6, wherein the central tail gas hole 3, the electrode holes 4, the feeding nozzles 5 and the outer ring tail gas hole 6 are distributed on the chassis panel 2 according to the design requirement and are combined with the chassis flange 1 and the chassis panel 2 together to form a reduction furnace chassis, the central tail gas hole 3 is positioned at the center of the chassis panel 2, the size Dn of the central tail gas hole 3 is 150-300 mm, the tail gas holes are of a water cooling jacket structure, 5 ring electrode holes 4 are sequentially arranged along the center of the chassis panel 2 outwards, the number of each ring electrode hole 4 from inside to outside is respectively 12, 20, 28, 36 and 44, and 140 in total, each ring electrode hole 4 is a concentric circle, the feeding nozzles 5 are provided with 4 rings, each ring feeding nozzles 5 are arranged between two adjacent ring electrode holes, the number of the ring feeding nozzles 5 from inside to outside is respectively 6, 12 and 16, the total number is 46, 8 outer ring tail gas holes 6 are annularly distributed on the outermost ring of the chassis panel 2, and the sizes Dn50-Dn150mm of the outer ring tail gas holes 6 are also of a water-cooling jacket structure. Because the tail gas temperature is too high, the water-cooling jacket structure can effectively reduce the metal wall temperature of the metal inner pipe, and ensure safe operation.

The electrode holes 4 of each ring are overlapped by two adjacent electrode holes of the same circle, and the total number of the electrode holes is 70.

The distance (electrode distance) between two adjacent electrode holes 4 in the same ring is 235mm, and can also be adjusted between 200 mm and 250 mm.

In order to obtain the optimal gas field and thermal field, the distance between the center of a single electrode hole on the outermost ring and the inner wall of a furnace cylinder of the reduction furnace is equal, and the distance is 200-350 mm.

In addition to the above embodiments, the present invention also includes other embodiments, and all technical solutions formed by equivalent transformation or equivalent replacement should fall within the protection scope of the claims of the present invention.

Claims

1. The utility model provides a 70 to excellent polycrystalline silicon reduction furnace chassis, includes chassis flange, chassis panel, central tail gas pocket, electrode hole, feed nozzle and outer lane tail gas pocket distribute on the chassis panel according to the design requirement, constitute the reduction furnace chassis jointly with chassis flange, chassis panel, its characterized in that: the center tail gas hole is located the center of chassis panel, is equipped with 5 ring electrode holes outwards in proper order along the center of chassis panel, and each ring electrode hole is concentric circles, feed nozzle is equipped with 4 rings, and each ring feed nozzle sets up between two adjacent ring electrode holes, outer lane tail gas hole distributes according to the annular at the outermost circle of chassis panel.

2. The chassis of the 70-pair rod polycrystalline silicon reduction furnace according to claim 1, characterized in that: the number of the ring electrode holes is 12, 20, 28, 36 and 44 respectively from inside to outside.

3. The chassis of the 70-pair rod polycrystalline silicon reduction furnace according to claim 1 or 2, characterized in that: the number of the feeding nozzles of each ring is respectively 6, 12 and 16 from inside to outside.

4. The chassis of the 70-pair rod polycrystalline silicon reduction furnace according to claim 1, characterized in that: the electrode holes of each ring are overlapped by two adjacent electrode holes in the same circle.

5. The chassis of the 70-pair rod polycrystalline silicon reduction furnace according to claim 4, characterized in that: the distance between two adjacent electrode holes is adjusted between 200 mm and 250 mm.

6. The chassis of the 70-pair rod polycrystalline silicon reduction furnace according to claim 4 or 5, wherein: the distance between two adjacent electrode holes is 235 mm.

7. The chassis of the 70-pair rod polycrystalline silicon reduction furnace according to claim 1, characterized in that: the distance between the center of each electrode hole of the outermost circle and the inner wall of the furnace barrel of the reduction furnace is equal and is 200-350 mm.