CN102422149B - Polycrystalline wafer inspection method - Google Patents
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- CN102422149B CN102422149B CN201080020208.XA CN201080020208A CN102422149B CN 102422149 B CN102422149 B CN 102422149B CN 201080020208 A CN201080020208 A CN 201080020208A CN 102422149 B CN102422149 B CN 102422149B
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- 238000000034 method Methods 0.000 title claims abstract description 39
- 238000007689 inspection Methods 0.000 title claims abstract description 32
- 230000007547 defect Effects 0.000 claims abstract description 57
- 230000003287 optical effect Effects 0.000 claims abstract description 29
- 238000002425 crystallisation Methods 0.000 claims description 26
- 230000008025 crystallization Effects 0.000 claims description 26
- 238000005286 illumination Methods 0.000 abstract description 5
- 239000013078 crystal Substances 0.000 abstract description 4
- 230000001678 irradiating effect Effects 0.000 abstract description 2
- 238000001514 detection method Methods 0.000 description 6
- 230000001788 irregular Effects 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 3
- 238000010612 desalination reaction Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000009102 absorption Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
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- 229920005591 polysilicon Polymers 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
- G01N21/9505—Wafer internal defects, e.g. microcracks
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3554—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for determining moisture content
- G01N21/3559—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for determining moisture content in sheets, e.g. in paper
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
A polycrystalline wafer inspection method has steps of: irradiating infrared light (3) toward an illumination position (P1) on a polycrystalline wafer (1) from a light source (2) arranged so that the optical axis passes by the illumination position (P1); photographing, by a camera (6) for photographing a photographing position (P2) on the polycrystalline wafer (1) separated a predetermined distance (D) from the illumination position (P1) in a surface direction of the polycrystalline wafer (1), the infrared light (3) being incident from the illumination position (P1), repeating reflection and refraction at crystal grain boundaries and defects inside the polycrystalline wafer (1), and exiting from the photographing position (P2); detecting defects in the polycrystalline wafer (1) from the brightness difference between a defect-free portion and a defect portion on a photographed image obtained by the camera (6). This inspection method makes it possible to obtain a photographed image including a light crystal pattern of the polycrystalline wafer (1) and therefore capable of clearly identifying the presence of defects and to easily and reliably detect the defects.
Description
Technical field
The present invention relates to the method for the defect in a kind of multi-wafer that checks polycrystalline silicon used for solar battery sheet etc. by infrared transmitting.
Background technology
In addition, patent documentation 2 discloses a kind of following method, its surface from multi-wafer and back side illuminaton infrared ray, by infrared camera, taken from surperficial infrared reflection light and from the infrared transmitting light at the back side, according to detect the defect of breaking of multi-wafer inside from surface and the comparative result of the view data at the back side.
Yet, in the situation that checking that object is polysilicon chip, according to the image pickup method of common infrared transmitting light, the crystallization figure being formed by crystallization direction, grain boundary or its profile is also acquired as image, therefore, in the process of processing at image, be difficult to identify the difference of crystallization figure and defect, the undetected survey of error detection or defect easily occurs.
Prior art document
Patent documentation 1: TOHKEMY 2007-258555 communique
Patent documentation 2: TOHKEMY 2007-218638 communique
Summary of the invention
The object of the invention is to, in shooting process desalination by the crystallization direction of multi-wafer, crystalline boundary with and the crystallization figure that forms of wheel Guo, detect reliably the defect in multi-wafer.
Based on above-mentioned problem, inventor has carried out multi-wafer to irradiate infrared ray repeatedly, and observes the ultrared experiment of its transmission, result obtain following opinion.That is,, if directly observe the infrared ray that sees through multi-wafer at ultrared irradiation position, can not desalinate the crystallization figure of the multi-wafer in photographic images.But, when the ultrared observation place of ultrared irradiation position and institute's transmission is between the camera site of camera during the suitable distance in interval, can desalinate the crystallization figure of multi-wafer, and can only make the brightness of defect in multi-wafer different from the brightness of other normal parts.The present invention completes according to such opinion.
In order to achieve the above object, according to the present invention, provide following technical scheme:
(1) inspection method for polycrystalline wafers, it has:
Light source from the mode by the irradiation position multi-wafer is configured with optical axis, irradiates ultrared operation to described irradiation position;
Use camera, to from described irradiation position incident and by the grain boundary of described multi-wafer inside and defect, repeatedly reflect and reflect the infrared ray that penetrates of camera site from described multi-wafer the operation of taking, wherein this camera site is from described irradiation position, to the surface direction of described multi-wafer, to leave the position of preset distance, and this camera is used for taking described camera site;
On the photographic images being obtained by described camera, according to zero defect part and the luminance difference of defect part, detect the operation of defect in described multi-wafer.
(2) according to the inspection method of (1) described multi-wafer, it is characterized in that, described camera site is set in to described multi-wafer be set with on the surface of face opposition side of described irradiation position.
(3) according to the inspection method of (1) described multi-wafer, it is characterized in that, described camera site is set on the surface that the face with being set with described irradiation position of described multi-wafer is identical.
(4) according to the inspection method of the multi-wafer described in any one in (1)～(3), it is characterized in that, described light source is single light source, and the mode of the optical axis of described light source to extend from described irradiation position to described camera site side, with respect to the surface tilt of described multi-wafer.
(5) according to the inspection method of the multi-wafer described in any one in (1)～(3), it is characterized in that, described light source is with respect to described camera site a plurality of light sources of balanced configuration roughly,
The described optical axis of the light source mode to extend from irradiation position described in each to described camera site side respectively described in each, the surface tilt with same pitch angle with respect to described multi-wafer.
(6) according to the inspection method of the multi-wafer described in any one in (1)～(5), it is characterized in that, described light source is linear light sources, and described camera is circuit sensing type camera, and described camera detects the infrared ray by cylindrical lens optically focused.
(7) according to the inspection method of the multi-wafer described in any one in (1)～(5), it is characterized in that, described light source is the ring-shaped light source that is formed with annular irradiation area,
Described camera is to using the inner side of described irradiation area of annular as the region sensing type camera of shooting area,
Described camera detects by the described infrared ray amplifying with lens light gathering.
Invention effect
According to the inspection method of multi-wafer of the present invention, from irradiation position, incide infrared ray interreflection and refraction in multi-wafer of multi-wafer, and penetrate from the camera site that the face direction to multi-wafer is separated the multi-wafer of preset distance from irradiation position.By the infrared ray being penetrated from this camera site by camera, can obtain the photographic images that makes the desalination of crystallization figure and can clearly identify the defect of existence, and can be easily and detect reliably defect.
Particularly, in the situation that not there is not defect in multi-wafer, infrared ray is interreflection or refraction in multi-wafer, the ultrared intensity that makes thus to arrive camera site roughly becomes and evenly and is hardly subject to the impact of crystallization figure, therefore the photographic images, being obtained by camera become do not reflect multi-wafer crystallization figure, the uniform image of brightness.
Yet, the in the situation that of there is defect in multi-wafer, by this defect, cause infrared ray irregular reference, and it is inhomogeneous to make to arrive the ultrared intensity of camera site.Therefore, on the photographic images being obtained by camera, compare with not there is not the situation of defect, defect can display as the different region of brightness.Like this, according to the present invention, the photographic images being obtained by camera, be subject to hardly the impact of the crystallization figure that produced by the crystallization direction of multi-wafer, grain boundary and wheel Guo thereof, only defect part is different from the brightness of zero defect part, therefore, can detect reliably the defect in multi-wafer.
Accompanying drawing explanation
Fig. 1 is for implementing the side view of the optical system of multi-wafer inspection method of the present invention.
Fig. 2 is for implementing the front view of the optical system of multi-wafer inspection method of the present invention.
Fig. 3 is that infrared ray is at the key diagram of the situation of the inner reflection occurring of multi-wafer and refraction.
Fig. 4 A is the photo of the photographic images of the multi-wafer by infrared radiation of the present invention.
Fig. 4 B is the photo of photographic images of the multi-wafer that passes through infrared radiation of reference example.
Fig. 5 is for implementing the side view of optical system of the multi-wafer inspection method of variation of the present invention.
Fig. 6 is for implementing the side view of optical system of the multi-wafer inspection method of variation of the present invention.
Fig. 7 is for implementing the side view of optical system of the multi-wafer inspection method of variation of the present invention.
Fig. 8 is the vertical view of the examination scope (range of observation) on multi-wafer.
Fig. 9 is for implementing the side view of optical system of the multi-wafer inspection method of variation of the present invention.
Embodiment
Fig. 1 and Fig. 2 represent for implementing the optical system of the inspection method of multi-wafer 1 of the present invention.Fig. 1 represents to check that direction (the conveyance direction of multi-wafer 1) A is the side view of the optical system of state from right to left, and Fig. 2 represents to check that direction A is for the front view of the optical system of the state in front of paper from paper.
With reference to Fig. 1, Fig. 2, to describing for implementing the optical system of the inspection method of multi-wafer 1 of the present invention.
First, from being disposed at the linear light sources 2 of multi-wafer 1 lower face side, by the infrared ray 3 of line (line) shape of the direction extension of the conveyance direction A quadrature along with multi-wafer 1, expose to the irradiation position P1 of the wire of multi-wafer 1.Now, so that the optical axis of the light source 2 by irradiation position P1 configures light source 2 with respect to the mode of the surface normal n1 deflection of multi-wafer 1.Particularly, the optical axis of light source 2 is configured to the mode that the infrared ray 3 to penetrate from light source 2 extends from irradiation position P1 side direction camera site P2 side, with respect to normal n1, forms inclined angle alpha.
Such linear light sources 2 can linearly be configured and form by a plurality of infrared light-emitting diodes, or by bar-shaped infrared light sources and the constituting of light source cover that is formed with wire gap.
As schematically shown in Figure 3 property ground represent like that, from the infrared ray 3 of irradiation position P1 incident, in the inside of multi-wafer 1, repeatedly reflect and reflect, and arrive camera site P2 after the interreflection of the table back side of multi-wafer 1.Infrared ray 3 parts that arrive camera site P2 reflect, and a part directly penetrates from the surface of multi-wafer 1.Wherein, utilize and be configured to make its optical axis 7 by the camera 6 of camera site P2, the infrared ray 3 penetrating is taken, thereby obtain photographic images by camera 6 from camera site P2.At this, this camera site P2 is set in from irradiation position P1 and is left the position of preset distance D to the surface direction of multi-wafer 1.
In the present embodiment, camera 6 is configured in a side contrary with light source 2 with respect to multi-wafer 1.In addition, the optical axis 7 of this camera 6 passes through camera site P2, and becomes vertical with respect to the surface of multi-wafer 1.
The wavelength that is the infrared ray 3 of wire irradiation is the wavelength that is suitable for detecting inherent vice, is preferably for example wavelength region may of 0.7 μ m～2.5 μ m.In addition, camera 6 is also preferably and in this wavelength region may, has good susceptibility.
Camera site P2 is set in from irradiation position P1 and leaves the position of preset distance D.This distance D is set according to the crystalline texture of multi-wafer 1 or its thickness etc., is set on the optimum position of desalination crystallization figure.
In addition, inspection method of the present invention is preferably and usings the multi-wafer 1 of thickness 0.1～0.25mm as object.The thickness of multi-wafer 1 is thicker, in the inside of multi-wafer 1, carries out refraction, reflection or the absorption of infrared ray 3, thereby reduces the intensity of the infrared ray 3 taken by camera 6 and cannot obtain distinct photographic images.If the thickness attenuation of multi-wafer 1, has reduced infrared ray 3 and has arrived refraction and the order of reflection producing before the P2 of camera site, and remained crystallization figure on the photographic images obtaining at camera 6.
In addition, the optical axis of light source 2 preferably sets in the scope more than 20 ° and below 40 ° with respect to the inclined angle alpha of multi-wafer 1 normal to a surface n1.If inclined angle alpha is less than 20 °, infrared ray 3 arrives refraction required before leaving the camera site P2 of preset distance D from irradiation position P1 or the increased frequency of reflection, has reduced like this intensity of the infrared ray 3 that camera 6 takes and cannot obtain distinct photographic images.Otherwise, if inclined angle alpha is greater than 20 °, reduced infrared ray 3 required refraction and order of reflection before arriving camera site P2, on photographic images, remain crystallization figure.
And then the preset distance D between irradiation position P1 and camera site P2 is preferably set to 1～3mm.If preset distance D is less than 1mm, infrared ray 3 required refraction and order of reflection before arriving camera site P2 reduces, and can remain crystallization figure like this on photographic images.If during preset distance D size 3mm, reflect and the number of times that reflects increases the strength decreased of the infrared ray 3 that camera 6 is taken and cannot obtain distinct photographic images.
In the inspection method of multi-wafer 1 of the present invention, the thickness of above-mentioned multi-wafer 1, inclined angle alpha and preset distance D are suitably set in above-mentioned scope, to reduce the impact of crystallization figure, and obtain distinct photographic images.
Optical system in the inspection method of the multi-wafer 1 for implementing to form as mentioned above, pass through the infrared ray that does not have defective area free from defect 3 of multi-wafer 1, after the crystallization direction of crystal grain of a plurality of irregular existence and the refraction repeatedly of grain boundary and reflection, arrived camera site P2.Infrared ray 3 through repeatedly irregular refraction and reflection arrives when irradiation position P1 leaves the camera site P2 of preset distance D, through the impact that each crystal grain reflects and reflection produces, cancel out each other, therefore the photographic images, being photographed at camera site P2 by camera 6 is the wire photographic images with uniform luminance.
On the other hand, the interior situation of defect 4 that exists of multi-wafer 1 is different from above-mentioned situation, because infrared ray 3 produces irregular reference or absorptions by defect 4, has occurred the shadow that produced by defect 4 or bright part on the photographic images therefore photographing at camera site P2.The shadow that this defect 4 produces or the brightness of light, the photographic images forming from infrared ray 3 by by above-mentioned area free from defect is different, therefore, by both brightness of comparison, can detect defect 4.
By on one side multi-wafer 1 being carried to conveyance direction A, continuously repeatedly carry out above operation on one side, the photographic images with the area as shown in Fig. 4 A, Fig. 4 B can be obtained.
Fig. 4 A, Fig. 4 B represent that camera 6 taken the photographic images of the infrared ray 3 that sees through the region that comprises defect 4.
In Fig. 4 A, on, the uniform background image of brightness that form at the infrared ray 3 by having passed through area free from defect, be formed with the bright image of the shadow producing with the infrared ray 3 by having passed through defect 4.Therefore, by from the different region of the uniform background image sensed luminance of brightness, can be simply and defect recognition 4 reliably.In addition, the multi-wafer 1 that it is 0.2mm that Fig. 4 A represents thickness is as defects detection object, and sets preset distance D=2mm, inclined angle alpha=20 ° and the photographic images that obtains.
In addition, in the present invention, camera site P2 is set at from irradiation position P1 and leaves the position of preset distance D=2mm to the surface direction of multi-wafer 1.Unlike this, when camera site being set as to preset distance D on the extended line of optical axis of light source 2 and being less than the position P3 of 1mm (with reference to Fig. 1), at camera site P3, taken without repeatedly fully reflecting and reflecting and the infrared ray 3 of ejaculation, therefore, photographic images is the image that is subject to the impact of grain boundary.Therefore,, even form photographic images by the infrared ray 3 that has passed through to comprise the region of defect 4, also as shown in Figure 4 B, the part that is subject to defect 4 impacts is buried in crystallization figure, and is difficult to defect recognition 4 and crystallization figure.
Fig. 5 is illustrated in the downside of multi-wafer 1, two linear light sources 2 are configured on the position with respect to the normal on the P2 of camera site (optical axis 7 of camera 6) line symmetry to the example infrared ray of wire 3 being irradiated towards two irradiation position P1 of multi-wafer 1 from different vergence directions by each light source 2.In addition, in the present example the optical axis of each light source 2 is set as roughly consistent with the pitch angle that the surface of multi-wafer 1 forms.According to this example, except thering is above-mentioned effect, also make the light quantity of 6 infrared rays that can detect 3 of camera increase, obtained bright photographic images, therefore easily detect defect 4.
And then Fig. 6 represents the infrared ray 3 that sees through multi-wafer 1, by cylindrical lens 8 optically focused, to be detected the example of the infrared ray 3 of institute's optically focused by circuit sensing type camera 6.In the present example, cylindrical lens 8 is configured to make its length direction along the infrared ray 3 of wire, and the image of infrared ray 3 is amplified to the conveyance direction of multi-wafer 1.
When utilizing like this lens 8 to amplify infrared ray 3, easily by 6 pairs of infrared rays 3 of camera, detected, even if favourable aspect is also can reduce error detection or undetected survey for the continuous moving of multi-wafer 1.In addition, as shown in Figure 1 and Figure 2, in the example that light source 2 is single light source, also can introduce lens 8.
In addition, concrete size and the configuration of optical system etc., be set as suitable numerical value according to susceptibility of the irradiating angle of the wavelength domain of the thickness of multi-wafer 1, infrared ray 3, infrared ray 3 and camera 6 etc.
Then, Fig. 7 represents using light source 2 as ring-shaped light source, usings camera 6 as the camera of domain type, and light source 2 be take to multi-wafer 1 from camera 6 as the example of baseline configuration in different face side.Ring-shaped light source 2 is configured to be concentric shape with the optical axis 7 of camera 6.The light beam of the infrared ray 3 that the irradiation position P1 of light source 2 irradiates as light source 2 is maximum position, and it forms the circle more smaller than the circle of light source 2.
According to this example, as shown in Figure 7,8, camera site (shooting area) P2 is in the sensing range of domain type camera 6, and it is positioned at the inner side of ring-shaped light source 2, is positioned at the inner side of the circle that the radius of direction partition distance D of the optical axis 7 from irradiation position P1 to camera 6 is little.In addition configure as required, the convex lens 8 for amplification to thing lens side of camera 6.In addition, irradiation position P1 also can be formed by annulus.
According to the example of Fig. 7, from the infrared ray 3 of light source 2, from circular irradiation position P1, enter the inside of multi-wafer 1, after repeatedly reflecting and reflecting, arrive the inner side of the circular camera site P2 of camera 6, by domain type camera 6, taken.
By ring-shaped light source 2, from all directions of camera 6, towards the irradiation position P1 of multi-wafer 1, irradiate infrared ray 3, therefore, even when being difficult to detect the defect 4 in multi-wafer 1 from a direction, also can detect defect 4.In addition, by adopting domain type camera 6, the examination scope of multi-wafer 1 (range of observation) can be set as to the face larger than wire examination scope, therefore improve checking efficiency.
In addition, Fig. 9 represents ring-shaped light source 2 and domain type camera 6 to be configured in the example of the identical face side of multi-wafer 1.In this example, from the infrared ray 3 of light source 2, from circular irradiation position P1, enter into the inside of multi-wafer 1, after repeatedly reflecting and reflecting, arrive the inner side of circular camera site P2, then taken by domain type camera 6.
In addition,, because infrared ray 3 is when the surface reflection of multi-wafer 1 causes photographic images not distinct, also can the light shield 9 that cover use be set on camera 6, so that the reflected light of infrared ray 3 can not be directly incident on camera 6.In addition, in this example, irradiation position P1 also can be formed by annulus.
According to the example of Fig. 9, irradiation position P1 and camera site P2 are positioned at take on the identical face that multi-wafer 1 is benchmark, and the part of defect 4 in multi-wafer 1 is while having stronger reflection characteristic than other normal parts to infrared ray 3, can be effectively and easily detect its defect 4.And then, even if cannot be set in irradiation position P1 or camera site P2 under the state on a face of multi-wafer 1, also can detect defect 4.
Certainly, for the example in above-mentioned Fig. 1, Fig. 2, Fig. 5 and Fig. 6, linear light sources 2 also can be configured in take multi-wafer as benchmark with the face of camera 6 phase the same sides on.
And then, in Fig. 9 with as illustrated in double dot dash line, can utilize as required the light conductors such as optical fiber, acrylic resin board, also can be by the infrared ray from linear light sources 23 at least 1 end face from four end faces (four sides) of multi-wafer 1 to the internal irradiation of multi-wafer 1.
In this case, according to the example in Fig. 5, Fig. 6, Fig. 7 and Fig. 9, even in the moving process of multi-wafer 1, depart from from a part for a light source 2 or light source 2 the front side end edge of the working direction of multi-wafer 1 or the rear side end edge of working direction, if other parts of other light sources 2 or light source 2 the not end edge portion of the multi-wafer from movement 1 depart from, also can proceed the detection of defect 4.Therefore, also can carry out to the end edge portion of multi-wafer 1 detection of defect 4.
Above example is that from vergence direction, the irradiation position P1 towards multi-wafer 1 irradiates by infrared ray 3.Therefore, at infrared ray 3, by the process of multi-wafer 1, the chance of its refraction and reflection is more than the irradiation of vertical direction, thereby infrared ray 3 is not vulnerable to the impact of crystallization figure.But the direction of illumination of infrared ray 3 also can be set as the direction substantially vertical with respect to the irradiation position P1 of multi-wafer 1.Even if set like this, infrared ray 3 is also reflected on the border of a plurality of crystallizations, and infrared ray 3 is also to the direction diffusion beyond vertical direction, therefore by taking the infrared ray 3 after this diffusion, can obtain the photographic images that not affected by crystallization figure.
In addition, above example is to make infrared ray 3 towards the irradiation position P1 of multi-wafer 1, and irradiates to tilt to point to the state of camera site P2.Therefore, many infrared rays 3 towards camera site P2, therefore can be guaranteed required light quantity at camera site P2 via multi-wafer 1.But, even if infrared ray 3 is the direction beyond the P2 of camera site via multi-wafer 1, by the inside at multi-wafer 1, be refracted, reflect and to irregular reference, and at camera site P2, occur the light quantity that can take, therefore can carry out the inspection of defect 4 from the principle.
If multi-wafer 1 is checking that position stops, shooting condition is fine.On the other hand, in the situation that making Shutter speed priority, also can make multi-wafer 1 continuous moving.In addition, the posture of multi-wafer 1 can be not horizontal yet, and according to checking space, be set as vertical or heeling condition.
In addition, the present invention is not limited to silicon chip, also can be applicable to the wafer of other polycrystalline structures.
With reference to specific embodiment, describe the present invention in detail, but also can apply various changes or correction without departing from the spirit and scope of the present invention, this is apparent to those skilled in the art.
The Japanese patent application (Patent 2009-130725) of the application based on application on May 29th, 2009 and the Japanese patent application (Patent 2009-186304) of application on August 11st, 2009, enroll its content in this instructions as reference at this.
Industrial utilizability
According to the inspection method of multi-wafer of the present invention, can desalinate the crystallization figure by crystallization direction, grain boundary and the wheel Guo generation thereof of multi-wafer, thereby can obtain the photographic images that can clearly identify the defect of existence, can easily and carry out reliably the detection of defect.
Claims (7)
1. an inspection method for multi-wafer, comprising:
Light source from the mode by the irradiation position multi-wafer configures with optical axis, irradiates ultrared operation to described irradiation position;
Use camera; to from described irradiation position incident and by the grain boundary of described multi-wafer inside and defect, repeatedly reflect and reflect the infrared ray that penetrates of camera site from described multi-wafer the operation of taking; wherein this camera site is from described irradiation position, to the surface direction of described multi-wafer, to leave the position of preset distance, and this camera is used for taking described camera site; And
On the photographic images being obtained by described camera, according to zero defect part and the luminance difference of defect part, detect the operation of the defect in described multi-wafer,
Described preset distance is for accessing the distance of not residual crystallization figure on described photographic images and distinct described photographic images that can defect recognition, in the situation that the thickness of described multi-wafer is 0.1～0.25mm, described in this, preset distance is set to 1～3mm.
2. the inspection method of multi-wafer according to claim 1, is characterized in that, described camera site is set on the surface of the contrary side of the face with being set with described irradiation position of described multi-wafer.
3. the inspection method of multi-wafer according to claim 1, is characterized in that, described camera site is set on the surface that the face with being set with described irradiation position of described multi-wafer is identical.
4. according to the inspection method of the multi-wafer described in any one in claim 1～3, it is characterized in that,
Described light source is single light source,
The mode of the optical axis of described light source to extend from described irradiation position to described camera site side, with respect to the surface tilt of described multi-wafer.
5. according to the inspection method of the multi-wafer described in any one in claim 1～3, it is characterized in that,
Described light source is with respect to described camera site a plurality of light sources of balanced configuration roughly,
The mode of the described optical axis of light source to extend from irradiation position described in each to described camera site side described in each, the surface tilt with identical pitch angle with respect to described multi-wafer.
6. according to the inspection method of the multi-wafer described in any one in claim 1～3, it is characterized in that,
Described light source is linear light sources,
Described camera is circuit sensing type camera,
Described camera detects the infrared ray by cylindrical lens optically focused.
7. according to the inspection method of the multi-wafer described in any one in claim 1～3, it is characterized in that,
Described light source is the ring-shaped light source that is formed with annular irradiation area,
Described camera is to take the region sensing type camera that the inner side of described irradiation area of annular is shooting area,
Described camera is to detecting with the described infrared ray of lens light gathering by amplifying.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
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| JP2009130725 | 2009-05-29 | ||
| JP2009-130725 | 2009-05-29 | ||
| JP2009186304 | 2009-08-11 | ||
| JP2009-186304 | 2009-08-11 | ||
| PCT/JP2010/057094 WO2010137431A1 (en) | 2009-05-29 | 2010-04-21 | Polycrystalline wafer inspection method |
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| Publication Number | Publication Date |
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| CN102422149A CN102422149A (en) | 2012-04-18 |
| CN102422149B true CN102422149B (en) | 2014-03-19 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201080020208.XA Expired - Fee Related CN102422149B (en) | 2009-05-29 | 2010-04-21 | Polycrystalline wafer inspection method |
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| JP (1) | JP5559163B2 (en) |
| KR (1) | KR101323035B1 (en) |
| CN (1) | CN102422149B (en) |
| TW (1) | TWI468674B (en) |
| WO (1) | WO2010137431A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102680102A (en) * | 2012-04-28 | 2012-09-19 | 江南大学 | Automatic detection method of solar silicon chip colors based on machine vision |
| JP2014190797A (en) * | 2013-03-27 | 2014-10-06 | Tokushima Densei Kk | Defect inspection device for silicon wafer |
| TWI557407B (en) * | 2014-03-05 | 2016-11-11 | 晶元光電股份有限公司 | Method of chip inspection |
| KR101522365B1 (en) * | 2014-05-28 | 2015-05-21 | 이영우 | Apparatus for inspecting substrate using oblique illumination |
| KR101602733B1 (en) * | 2014-10-28 | 2016-03-11 | 한국교통대학교산학협력단 | Apparatus and method for inspecting wafer using light |
| EP3926330A1 (en) | 2014-12-05 | 2021-12-22 | Kla-Tencor Corporation | Apparatus and method for defect detection in work pieces |
| CN105738379B (en) * | 2014-12-12 | 2018-10-19 | 上海和辉光电有限公司 | A kind of detection device and detection method of polysilicon membrane |
| CN107369740A (en) * | 2017-07-17 | 2017-11-21 | 苏州天准科技股份有限公司 | It is a kind of to be used to detect the hidden optical detection apparatus split of solar silicon wafers and detection method |
| CN107907549A (en) * | 2017-11-13 | 2018-04-13 | 武汉华星光电半导体显示技术有限公司 | Inspecting substrate equipment and substrate inspecting method |
| US10724965B2 (en) | 2018-02-09 | 2020-07-28 | Massachusetts Institute Of Technology | Systems and methods for crack detection |
| JP7063181B2 (en) * | 2018-08-09 | 2022-05-09 | 株式会社Sumco | Wafer inspection method and inspection equipment |
| CN109765183B (en) * | 2019-03-28 | 2023-11-24 | 青岛海鼎通讯技术有限公司 | Mobile phone screen detection device and application method thereof |
| CN111855686A (en) * | 2019-04-30 | 2020-10-30 | 视泰科技控股公司 | Apparatus for detecting defects in an object and method thereof |
| TWI797689B (en) * | 2021-05-24 | 2023-04-01 | 馬來西亞商正齊科技有限公司 | Apparatus and method for performing internal defects inspection of an electronic component |
| CN116913797B (en) * | 2023-07-14 | 2024-02-13 | 无锡九霄科技有限公司 | Wafer bonding quality detection device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001305072A (en) * | 2000-04-25 | 2001-10-31 | Advantest Corp | Method and device for detecting defect in substrate |
| US20010054693A1 (en) * | 1998-08-21 | 2001-12-27 | Trw Inc. | Method and apparatus for inspection of a substrate by use of a ring illuminator |
| JP2007218638A (en) * | 2006-02-14 | 2007-08-30 | Sharp Corp | Crack inspection device of polycrystalline semiconductor wafer and crack inspection method |
| JP2008198966A (en) * | 2007-02-08 | 2008-08-28 | Nippon Electro Sensari Device Kk | Wafer defect inspection device |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3187759B2 (en) * | 1997-12-09 | 2001-07-11 | 株式会社アドバンテスト | Organic contamination detection / removal device, organic contamination detection / removal method, and chemical contamination detection / removal device and chemical contamination detection / removal method |
| JP4363368B2 (en) * | 2005-06-13 | 2009-11-11 | 住友電気工業株式会社 | Method for evaluating damage to compound semiconductor member, and method for producing compound semiconductor member |
| DE102005061785B4 (en) * | 2005-12-23 | 2008-04-03 | Basler Ag | Method and apparatus for detecting cracks in silicon wafers |
| WO2008033779A2 (en) * | 2006-09-12 | 2008-03-20 | Rudolph Technologies, Inc. | Polarization imaging |
-
2010
- 2010-04-21 JP JP2011515956A patent/JP5559163B2/en not_active Expired - Fee Related
- 2010-04-21 WO PCT/JP2010/057094 patent/WO2010137431A1/en active Application Filing
- 2010-04-21 CN CN201080020208.XA patent/CN102422149B/en not_active Expired - Fee Related
- 2010-04-21 KR KR1020117027655A patent/KR101323035B1/en active IP Right Grant
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010054693A1 (en) * | 1998-08-21 | 2001-12-27 | Trw Inc. | Method and apparatus for inspection of a substrate by use of a ring illuminator |
| JP2001305072A (en) * | 2000-04-25 | 2001-10-31 | Advantest Corp | Method and device for detecting defect in substrate |
| JP2007218638A (en) * | 2006-02-14 | 2007-08-30 | Sharp Corp | Crack inspection device of polycrystalline semiconductor wafer and crack inspection method |
| JP2008198966A (en) * | 2007-02-08 | 2008-08-28 | Nippon Electro Sensari Device Kk | Wafer defect inspection device |
Also Published As
| Publication number | Publication date |
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| TWI468674B (en) | 2015-01-11 |
| KR101323035B1 (en) | 2013-10-29 |
| TW201100788A (en) | 2011-01-01 |
| CN102422149A (en) | 2012-04-18 |
| KR20120022993A (en) | 2012-03-12 |
| WO2010137431A1 (en) | 2010-12-02 |
| JPWO2010137431A1 (en) | 2012-11-12 |
| JP5559163B2 (en) | 2014-07-23 |
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