JP3187759B2 - Organic contamination detection / removal device, organic contamination detection / removal method, and chemical contamination detection / removal device and chemical contamination detection / removal method - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic contamination detection / removal device, an organic contamination detection / removal method thereof, a chemical contamination detection / removal device, and a chemical contamination detection / removal method thereof.

[0002]

2. Description of the Related Art A DRAM (Dynamic Randa)
As the degree of integration of a semiconductor integrated circuit such as a m Access Memory increases, the thickness of a gate oxide film decreases, and a MOS (Meta1 Oxide Semico) is formed.
nector) FET (Field Effect)
Electric field during the operation of the Transistor (about 4 × 10 ⁶⁾
(V / cm). Here, when metal contamination and organic contamination exist when forming a gate oxide film by thermal oxidation, dielectric breakdown occurs. It is known that the organic contamination also causes the deterioration of the insulating property even if it adheres after the gate oxide film is formed.

[0003] In the prior art, detecting organic contaminants;
Alternatively, detecting organic contamination and analyzing the composition thereof and removing the organic contamination determined to be an obstacle to the operation of the electronic circuit were completely separate steps. Generally, when a light beam having a wavelength corresponding to the molecular vibration of a contaminating organic molecule is applied to the duty position, a wavelength component corresponding to the molecular vibration is absorbed, so that light reflected from the relevant position on the wafer (semiconductor substrate) is spectrally reflected. The presence or absence of organic contamination can be detected by the analysis. As a method of spectral analysis of light, FTI
The R (infrared Fourier spectroscopy) method is known.

[0004] In a semiconductor production process, an organic contamination is inspected by a FTIR apparatus for a wafer having a concern about organic contamination. Thereafter, the semiconductor substrate is mounted again in another cleaning apparatus, washed, and the presence or absence of organic contamination on the semiconductor substrate is checked again by the FTIR apparatus. That is, the conventional technology has a consistent in-1 in
It is not the concept of e-equipment, but o
The idea was to analyze with ff-line.

In general, the thickness of a film of an organic substance contaminating a wafer is extremely thin, from several nanometers (nm) to several tens of nm, and a single reflection on the wafer surface is insufficient in sensitivity for detecting contamination. A method of tapering the end face of a wafer, entering probing light from the end face, emitting from the other end face, and performing FTIR on the probing light has been reported at a conference (multiple internal reflection infrared absorption spectroscopy).

[0006]

The detection and removal of metal contamination is separately proposed (method and apparatus for removing foreign matter contamination).
Thus, the problem to be solved by the present invention is to detect an organic contamination in an inspection object (for example, a semiconductor substrate) or to perform a failure in an electronic circuit operation determined by performing an organic contaminant component analysis in addition thereto. An object of the present invention is to improve the yield of a mirror-finished semiconductor substrate (bar wafer) or a semiconductor integrated circuit in the course of manufacture by removing such contamination.

[0007] In order to solve the above-mentioned problems, the present invention detects organic contamination causing a decrease in yield at the stage of manufacturing a highly integrated semiconductor at a high speed, or simultaneously detects a substance component of the contamination. A method and an apparatus for removing foreign matter, comprising means for analyzing and removing contamination.

[0008] The gate oxide film used for the MOSFET is expected to be as thin as several nm due to the demand for scaling accompanying higher integration and higher performance. The present invention detects and removes organic contaminants that cause a reduction in yield at the stage of manufacturing these highly integrated semiconductors.
1ine device.

SUMMARY OF THE INVENTION In order to solve the above problems, an object of the present invention is to detect, at a high speed, organic contamination causing a decrease in yield at the stage of manufacturing a highly integrated semiconductor, or to additionally detect the contamination. An object of the present invention is to provide an organic contamination detection / removal device having means for simultaneously analyzing components and removing contamination, an organic contamination detection / removal method thereof, a chemical contamination detection / removal device, and a chemical contamination detection / removal method thereof.

[0010]

Organic contamination detection and removal apparatus of the present invention means to solve the above-mentioned object, the organic pollution detection and removal apparatus in step of production semiconductor silicon wafer, the inspection object as a semiconductor silicon pair of pairs facing formed on the wafer toward the organic and Torre <br/> inches, after multiple reflection inside the semiconductor silicon wafer to incident infrared radiation from the end face of one of the pair towards the trench, by spectral analysis from the infrared rays emitted from the end face of the other <br/> pair countercurrent trench Organic contamination detection means for detecting contamination, an optical dry cleaning mechanism for removing organic contamination when it is determined that organic contamination is present, and means for again checking whether or not organic contamination has been removed by the organic contamination detection means. Are provided in the same device.

In addition, instead of infrared rays, near-infrared rays covering the wavelength region of the fundamental resonance spectrum having harmonics (second harmonics) and third harmonics (third harmonics) are incident, and organic contamination is detected. You may have a detection means.

In addition, a light beam having a wavelength component in the entire wavelength band of a resonance spectrum of an organic substance as infrared light or near infrared light for detecting organic contamination is defined as a probing light beam, and the probing light after passing through the object to be measured is subjected to Fourier transform. The organic contamination detecting means for detecting the organic contamination.

In addition, a wavelength band having a resonance spectrum of an organic substance is swept on the light source side as infrared light or near infrared light for detecting organic contamination, and the intensity of the probing light after passing through the object to be measured is detected. An organic contamination detecting means for detecting contamination may be provided.

Further, the probing light is polarized and separated into p-waves or s-waves, and the p- or s-waves subjected to polarization separation are irradiated onto a semiconductor silicon wafer as an inspection object, and the probing after passing through the object to be measured is performed. It may have an organic contamination detecting means for detecting organic contamination by Fourier turning the light.

Also, a pair of pairs on a semiconductor silicon wafer
The oriented trench is formed by chemical etching of the (100) plane or the (110) plane, and is provided with an organic contamination detecting means for detecting an organic contamination by irradiating a probing ray at a critical angle or less according to the angle of the formed trench. May have.

Also, a pair of pairs on a semiconductor silicon wafer
The orientation trench may be formed by ion milling on any surface.

Further, the semiconductor silicon wafer may be polished on both sides.

Also, a pair of pairs on a semiconductor silicon wafer
The orientation trench may be formed not only in the edge region but also in a discarded region where the semiconductor integrated circuit is not formed, including between the semiconductor integrated circuit and the semiconductor integrated circuit, on the semiconductor silicon wafer.

Also, a pair of pairs on a semiconductor silicon wafer
The direction trench is formed in a plurality of columns, rows, and diagonals of a discarded area where a semiconductor integrated circuit is not formed, including not only an end area but also a semiconductor integrated circuit and a semiconductor integrated circuit, on a semiconductor silicon wafer. are paired, infrared or near infrared may have the organic contamination detection means for detecting organic contaminants by being incident on a pair of pairs towards the neighboring trenches in the same column.

In addition, the semiconductor silicon wafer is disposed not only in the end region but also in the discarded region where the semiconductor integrated circuit is not formed, including the region between the semiconductor integrated circuits, on the semiconductor silicon wafer in the middle of the semiconductor manufacturing process. A silicon wafer piece for multiple reflection detection, including a tapered end face that is half of the trench at the wafer end face, may be attached as an organic contamination detection sensor.

Also, a pair of pairs on a semiconductor silicon wafer
Countercurrent trench, the observation surface is a semiconductor silicon wafer surface between the one pair toward the trench and the other pair countercurrent train <br/> Ji,
By protecting with a protective film during the progress of each semiconductor manufacturing process, peeling off the protective film at the start of observation and exposing the surface, and removing organic matter before the start of observation by the optical dry cleaning mechanism. An organic contamination detecting means for detecting organic contamination may be provided.

The optical dry cleaning mechanism includes means for irradiating the pulsed light from the irradiation light source for removing organic substances and simultaneously irradiating the entire surface of the semiconductor silicon wafer, and controlling the duration of pulsed light emission and the number of pulsed light emission. Means for controlling the total irradiation energy.

Further, the optical dry cleaning mechanism, the irradiation light source for removing organic matter and pulse emission, and means for irradiating the portion of the semiconductor silicon wafer surface, organic each pair of pairs directed preparative <br/> wrench depending on the contamination detection result, the duration and the control of the pulse emission number of pulse emission, and means for controlling the optimum overall irradiation energy in the region of each pair of pairs countercurrent train <br/> Ji Is also good.

Further, an apparatus for continuously supplying a semiconductor silicon wafer as an inspection object may be provided.

Further, the apparatus may have a vacuum vessel for enclosing the entire organic pollution detecting / removing apparatus in a vacuum atmosphere, and means for removing the removed organic substances or foreign substances to the outside when the vacuum vessel is evacuated. Good.

Further, in the organic contamination detecting / removing device,
It may have an electrostatic electrode that collects fine particles in which organic substances are decomposed and removes them to the outside.

[0027] Organic contamination detection and removal method of the organic contamination detection and removal apparatus of the present invention, the organic contamination detection means, the multiple reflection inside the semiconductor silicon wafer to incident infrared radiation from the end surface of one <br/> pair countercurrent trench After that, a step of detecting organic contamination by spectral analysis from infrared light emitted from the end face of the other opposed trench, and an optical dry cleaning mechanism,
Removing organic contamination when it is determined that organic contamination exists.

In addition, the organic contamination detecting means enters near infrared rays covering the wavelength region of the fundamental resonance spectrum having overtones (second harmonics) and third harmonics (third harmonics) instead of infrared rays. There may be a step of detecting contamination.

Further, the light having the wavelength component in the entire wavelength band of the resonance spectrum of the organic substance as infrared light or near infrared light for detecting the organic contamination is determined as the probing light by the organic contamination detection means, and after passing through the object to be measured. Detecting the organic contamination by performing a Fourier transform on the probing light.

In addition, the organic contaminant detection means sweeps a wavelength band having a resonance spectrum of an organic substance on the light source side as infrared rays or near infrared rays for detecting organic contaminants,
The method may include a step of detecting organic contamination by detecting the intensity of the probing light after passing through the object to be measured.

Further, the probing light is polarized and separated into p-waves or s-waves by the organic contamination detection means, and the p-polarized light is separated.
The method may further include a step of irradiating a semiconductor silicon wafer as a test object with a wave or an s-wave, and Fourier-modulating the probing light after passing through the object to be measured to detect organic contamination.

Further, the method may include a step of detecting organic contamination by injecting a probing light beam at a critical angle or less according to the angle of the formed trench by the organic contamination detecting means.

Further, the organic contamination detection means, infrared or near infrared may have the step of detecting organic contamination by being incident on a pair of pairs towards the neighboring trenches in the same column.

A pair of pairs on a semiconductor silicon wafer
Countercurrent trench, the observation surface is a semiconductor silicon wafer surface between the one pair toward the trench and the other pair countercurrent train <br/> Ji,
During the course of each semiconductor manufacturing process, a step of protecting with a protective film, a step of removing organic substances before the start of observation by an optical dry cleaning mechanism, and a step of peeling off the protective film at the start of observation to expose the surface And the step of performing.

In addition, the total irradiation energy can be reduced by controlling the duration of pulse emission and the number of pulse emissions by simultaneously irradiating the entire surface of the semiconductor silicon wafer with pulse emission using an irradiation light source for removing organic substances. And controlling.

Further, the irradiation source to remove organics, and pulse emission, and the step of irradiating portions of the semiconductor silicon wafer surface, depending on the organic contamination detection result of each pair of pairs towards the trench, the duration of the pulse emission by controlling the time and the pulse emission number may include a step of controlling the optimum overall irradiation energy in the region of each pair of pairs toward the trench.

Further, the method may include a step of continuously supplying a semiconductor silicon wafer as an inspection object.

Further, the method may include a step of removing removed organic substances or foreign substances to the outside when the inside of the vacuum vessel is evacuated.

Further, the method may include a step of collecting fine particles in which organic substances are decomposed by an electrostatic electrode and excluding them to the outside.

Therefore, at the stage of manufacturing a highly integrated semiconductor, organic contamination causing a decrease in yield is detected at high speed.
Alternatively, in addition, the substance components of the contaminants can be simultaneously analyzed to remove the contaminants.

The chemical contamination detection and removal apparatus of the present invention, the chemical contamination detection and removal device in the production process of a semiconductor silicon wafer, and a pair of pair toward the trench facing formed on a semiconductor silicon wafer as an inspection object, whereas from the end surface of the pair toward trench after multiple reflection inside the semiconductor silicon wafer to incident infrared radiation, chemical contamination detection means for detecting the chemical contamination by spectral analysis from the infrared rays emitted from the end face of the other pair countercurrent train <br/> Ji And an optical dry cleaning mechanism for removing chemical contamination when it is determined that there is chemical contamination, and a means for again checking whether or not chemical contamination has been removed by means of chemical contamination detection in the same apparatus. I have.

[0042] Chemical contamination detection and removal methods of chemical contamination detection and removal apparatus of the present invention, the chemical contamination detection means, incident infrared from the end surface of one <br/> pair toward trench multiple reflection inside the semiconductor silicon wafer after the steps of detecting a chemical contamination by spectral analysis from the infrared rays emitted from the end face of the other pair towards the trench, the optical dry cleaning mechanism,
Removing the chemical contamination when it is determined that there is chemical contamination.

Therefore, chemical contamination can be detected at high speed, or, in addition, the substance components of the contamination can be simultaneously analyzed to remove the contamination.

[0044]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS First, a description will be given of a method of forming a trench in a semiconductor silicon wafer having a (100) plane and detecting organic contamination by wafer multiple internal reflection infrared absorption spectroscopy.

In general, the thickness of an organic substance film contaminating a wafer is extremely thin, from several nanometers (nm) to several tens of nm, and a single reflection of the wafer surface is insufficient in sensitivity for detecting contamination, so that the sensitivity is high. It is desirable to reflect the surface many times for detection. For this purpose, there is a method in which the end face of the wafer is polished to 45 degrees, infrared rays are incident therefrom and multiple reflections are performed inside the wafer, and then the light is emitted from the position where the end face of the wafer targeted for the center point is polished to 45 degrees. There is
If the diameter of the wafer is 200 mm or 300 mm, the attenuation of the probing light beam increases, which makes detection difficult. Therefore, the distance between the incident point and the outgoing point is desirably several tens of mm, which has a sufficient number of reflections for detection and does not cause excessive attenuation. In addition, not only the state of the mirror-surface semiconductor substrate (bare wafer) but also organic contamination at each stage of the process must be detected. As meet this purpose, by chemical etching in the region discarded without forming an integrated circuit on the wafer formed by pairs toward the trench.

Forming a trench in a semiconductor silicon wafer having a (100) plane by chemical etching is a known technique. For example, see the article "Silicon".
asa Mechanical Material ",
Kurt E. Petersen, Proceedin
go of the IEEE, Vol. 70, no.
5. May 1982, pp. 139-143. 420-457. FIG. 1 shows a state in which a trench cited from the article is formed.

The pair of pair countercurrent tray <br/> inch on the semiconductor silicon wafer, (100) plane or (110) plane and is formed by chemical etching, probing below a critical angle corresponding to the angle of the formed trench Organic light is detected by the incidence of light.

The pair of pair countercurrent tray <br/> inch on the semiconductor silicon wafer is formed by ion milling whatever surface. In addition, to increase the efficiency of multiple reflection, the semiconductor silicon wafer is polished on both sides.

[0049] An example formed by pairs toward the trench in the region discarded without forming an integrated circuit on a semiconductor silicon wafer in FIG.

[0050] Figure 3 shows an example of a pair countercurrent trench pairs formed on a semiconductor silicon wafer.

The pair of pair countercurrent tray <br/> inch on the semiconductor silicon wafer, a semiconductor silicon wafer on a semiconductor integrated circuit without the formation discarded region (only the region of the edge of the substrate not without a semiconductor integrated circuit and a semiconductor integrated circuit ), A plurality of columns (rows n1 to n9), rows (rows m1 to m9), and an oblique row (p
1, q1). Infrared or near infrared rays, to detect organic contamination by being incident on a pair of pairs towards the neighboring trenches in the same column.

In the semiconductor silicon wafer in the middle of the semiconductor manufacturing process, the discarded area where the semiconductor integrated circuit is not formed (including the area between the semiconductor integrated circuit and the semiconductor integrated circuit as well as the end area of the substrate) A silicon wafer piece for detecting multiple reflections (half the state of the trench at the end face of the silicon wafer, that is, including the tapered end face) is attached as an organic contamination detection sensor.

FIG. 4 shows a state in which infrared light for probing is incident from one end face of one trench, is multiply reflected inside the wafer, and is emitted from the other trench end face. Also, the surface of the silicon wafer between the trenches,
During the course of each semiconductor manufacturing process, the semiconductor device is protected with a protective film (such as a resist film), and the protective film is peeled off during observation to expose a fresh surface.

Infrared light having a wavelength longer than 1.2 μm is hardly absorbed in the silicon wafer and is suitable for probing.

In FIG. 5, infrared rays 2 are incident from the end face of one trench for probing, and the infrared ray emitted from the end face of the other trench after multiple reflection inside the silicon wafer 1 is detected, and the spectrum is analyzed by Fourier transform. FIG. 1 is a conceptual diagram of a spectrum analyzer 3 for detecting organic contamination and an organic contamination detection / removal device including an optical dry cleaning mechanism for removing organic contamination when it is determined to be present in the same device.

Instead of infrared rays, harmonics (second harmonics) and 3
Near-infrared rays covering the wavelength region of the fundamental resonance spectrum having overtones (third harmonics) can be incident to detect organic contamination.

A light beam having a wavelength component in the entire wavelength band of a resonance spectrum of an organic substance as infrared light or near infrared light for detecting organic contamination is regarded as a probing light beam, and the probing light after passing through the object to be measured is subjected to Fourier transform. To detect organic contamination.

[0058] (100) plane to form a facing pair countercurrent trench formed by chemical E Tsu quenching in a region discarded without forming an integrated circuit on a semiconductor silicon wafer with incident infrared radiation from the end surface of one trench multiplexed within the wafer After the reflection, the infrared light emitted from the end face of the other trench is detected, and the spectrum absorbed by the molecular vibration of the organic substance is detected by the Fourier transform spectral analysis to detect the organic contamination. Examples of the light source having such an action of irradiating light having energy larger than the binding energy of the organic substance attached for removal include excimer state excitation light (Xe excimer light) of xenon gas and laser light.

FIG. 6 shows an MO that was left in a clean room.
Organic contamination of the surface of the gate oxide film of the S transistor with the passage of time (Carbon contamination)
n = organic contamination indicates a state in which carbon (carbon) -based molecules are adhered). FIG. 7 shows Xe excimer light in which ethyl alcohol CH3CH2OH has an energy larger than the binding energy as an example of the adhered carbon (carbon) -based molecules. The state of reduction by irradiation is shown. As long as the irradiation light source can emit pulses, the total irradiation energy can be controlled by controlling the pulse duration and the number of pulses, so that only organic contamination can be achieved without damaging the semiconductor integrated circuit formed on the wafer. Can be removed or evaporated. Light irradiation for removing organic contamination can be performed on the entire surface of the wafer as necessary, or selectively in a narrow specific region.

Next, embodiments of the present invention will be described with reference to the drawings.

FIG. 5 is a conceptual diagram showing an embodiment of the present invention. In FIG. 5, a semiconductor substrate 1 is placed on an XY table 7 that moves in a horizontal plane. Note that the XY table 7 is for the purpose of inspecting the surface of the semiconductor substrate 1 while moving the semiconductor substrate 1, and in some cases, a rotary table may be provided.

[0062] In this embodiment, the infrared light source 2 is disposed on the diagonal of the XY table 1, it is issued light rays narrowed from its source, versus direction as in FIG. 2 on the semiconductor substrate 1 <br Incident on one of the trenches formed at the designated position. The trench has a tilt of about 55 degrees as shown in FIG. 1 by chemical etching of a silicon substrate having a (100) plane, so that the light is incident substantially perpendicularly to the angle. Infrared light incident on the trench also probed by accumulating contamination information of the substrate surface while being repeatedly reflected many times inside of the semiconductor substrate 1 as shown in FIG. 4, and is emitted from the other trench pairs countercurrent . The emitted infrared light is detected, and the absorption due to the molecular vibration of the organic substance is analyzed by the spectrum analyzer 3 by Fourier transform to detect organic contamination. Spectral analysis methods for detecting organic contamination are not limited to FTIR. Or a light source whose light source is polarized and separated. A method of detecting organic contamination by sweeping a wavelength band having a resonance spectrum of an organic substance as infrared light or near infrared light for detecting organic contamination on a light source side and detecting the intensity of probing light after passing through an object to be measured. It is. Alternatively, the method is a method in which probing light is polarized and separated into p-waves or s-waves, and the polarization-separated p-wave or s-wave is irradiated on a semiconductor silicon wafer as an inspection target to detect organic contamination.

The surface of the silicon substrate between the opposing trenches is covered with a protective film (eg, a resist film) while the process of each step proceeds, and the protective film is removed during the subsequent observation time to remove the silicon substrate. Ensure that the surface is directly exposed to organic contamination.

FIG. 6 shows a MOS left in a clean room.
The state in which the gate oxide film of the transistor is organically contaminated with time (start, 1 hour, 24 hours, 4 days) is shown.

When it is determined that there is organic contamination, light having an energy larger than the binding energy of the attached organic substance is applied from the irradiation light source (Xe (xenon) excimer light, etc.) 6 to the semiconductor substrate 1 in order to remove it. Irradiate.
FIG. 7 shows organic contamination (here, ethyl alcohol CH
185nm and 254n
The results are shown to be significantly reduced by irradiation with a low-pressure mercury lamp having a wavelength of m or a dielectric barrier discharge excimer lamp having a wavelength of 172 nm (from USHIO data).

Since the irradiation light source is of a type capable of emitting pulses, the controller 4 controls the power source and the driving circuit of the irradiation light source on the semiconductor substrate 1 by controlling the duration and the number of pulses. Only organic contamination can be removed or evaporated without damaging the integrated circuit. Irradiation of light for removing organic contamination can be performed by irradiating the entire surface of the semiconductor substrate 1 at one time, or by moving the XY table 1 with a specific spot size to remove the entire surface or only a specific portion. It is possible.

Whether or not organic contamination has been removed by light irradiation can be checked again by infrared spectrum analysis.

FIG. 8 shows an actual embodiment of the organic contamination detection /
A schematic diagram of the removing device is shown and described.

Although the principle is the same as that described with reference to FIG. 5, the silicon substrate (wafer) 21 to be inspected is
The storage / transportation mechanism 8 is added to enable continuous inspection. Since it is also performed by the atmosphere, it is preferable that the inside of the apparatus be a vacuum atmosphere in order to isolate the atmosphere. Further, the removed organic matter or foreign matter is eliminated to the outside when the inside of the apparatus is evacuated, so that it is not contaminated again.

As a result of irradiating with short wavelength excimer light or the like for the purpose of removing organic substances, carbon of the main constituent atoms of the organic substances becomes carbon dioxide, and hydrogen becomes water vapor and dissipates. Carbon dioxide becomes fine particles, and if it adheres to a semiconductor wafer, it can be a cause of semiconductor failure. For the purpose of more positively removing fine particles, an electrostatic precipitating electrode 14 is provided in the organic contamination detection / removal device for collecting fine particles in which organic substances are decomposed and excluding them to the outside to apply static electricity.

It should be noted that the apparatus of the present invention can be used not only for organic contamination, but also for human bodies and AP (Ammonia-peroxide).
It can also be applied to chemical contamination such as ammonia NH3 generated from the cleaning solution.

[0072]

As described above, according to the present invention, the organic contamination detecting / removing apparatus and the organic contamination detecting / removing method eliminate the organic contamination which causes a decrease in the yield at the stage of manufacturing a highly integrated semiconductor. There is an effect that the detection can be performed at a high speed, or additionally, the substance component of the contamination can be simultaneously analyzed to remove the contamination.

Further, the chemical contamination detecting / removing apparatus and the chemical contamination detecting / removing method can detect chemical contamination at a high speed, or additionally, simultaneously analyze the substance components of the contamination to remove the contamination. This has the effect.

[Brief description of the drawings]

FIG. 1 is a view showing formation of a trench by chemical etching in a semiconductor silicon wafer having a (100) plane.

2 is a diagram showing an example of forming by pairs toward the trench in the region discarded without forming an integrated circuit on a semiconductor silicon wafer.

FIG. 3 shows a plurality of pairs formed on a semiconductor silicon wafer.
It is a figure which shows the example of a direction trench.

FIG. 4 is a diagram showing a state in which infrared light for probing is incident from one end face of one trench, is multiply reflected inside the wafer, and is emitted from the other trench end face.

FIG. 5 is a conceptual diagram of an organic contamination detection / removal device according to an embodiment of the present invention.

FIG. 6 shows that a gate oxide film of a MOS transistor left in a clean room is changed over time (start, one hour later,
It is a figure which shows the spectrum data which shows the state which is being contaminated organically after 24 hours and 4 days.

FIG. 7: Organic contamination (here, ethyl alcohol CH3
185nm and 254n
FIG. 9 is a diagram showing spectrum data showing that the intensity is significantly reduced by irradiation with a low-pressure mercury lamp having a wavelength of m or a dielectric barrier discharge excimer lamp having a wavelength of 172 nm.

FIG. 8 is a schematic view of an organic contamination detection / removal device as an actual embodiment.

[Explanation of symbols]

 1, 21 Silicon substrate (wafer) 2, 22 Probing infrared ray 3, 23 Spectrum analyzer 4, 15 Controller (control circuit) 5, 24 Power supply and drive circuit of irradiation light source 6, 16 Irradiation light source 7, 17 Mount (X , Y, θ control) 8 Storage / transport mechanism of silicon substrate (wafer) 9 Vacuum container 10 Vacuum valve 11 Vacuum pump 12 Inert gas valve 13 Inert gas cylinder 14, 18 Electrostatic dust collecting electrode 33 Sensor

──────────────────────────────────────────────────続 き Continuing on the front page (72) Michio Niwano, 18-18-12 Higashi, Sumiyoshidai, Izumi-ku, Sendai City, Miyagi Prefecture (72) Nobuo Miyamoto, 26-26-15, Sakuragaoka, Aoba-ku, Sendai, Miyagi Prefecture (56 References JP-A-8-62125 (JP, A) JP-A-9-145611 (JP, A) JP-A-9-283584 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB Name) H01L 21/66 G01N 21/35 G01N 21/956

Claims (31)

(57) [Claims] In the organic contamination detection and removal apparatus in claim 1 a semiconductor silicon wafer production process, it is formed on a semiconductor silicon wafer as an inspection object
And a pair of opposing trench facing is, the counter Torre
After an infrared ray is incident from one end face of the trench and is reflected multiple times inside the semiconductor silicon wafer, the
Organic contamination detection means for detecting organic contamination by spectral analysis from infrared light emitted from the other end surface, an optical dry cleaning mechanism for removing the organic contamination when it is determined that the organic contamination is present, An organic contamination detection / removal device, wherein means for checking again by the organic contamination detection means whether or not the organic contamination has been removed is provided in the same device. 2. The method according to claim 1, wherein near-infrared rays covering a wavelength region of a fundamental resonance spectrum having harmonics (second harmonics) and third harmonics (third harmonics) are incident instead of the infrared rays to detect the organic contamination. 2. The method according to claim 1, further comprising the organic contamination detecting means.
Organic contamination detection / removal device according to 1. 3. A probing light beam having a wavelength component in the entire wavelength band of a resonance spectrum of an organic substance as the infrared light or the near infrared light for detecting the organic contamination, and the probing light after passing through the object to be measured. The organic contamination detection / removal device according to claim 1 or 2, further comprising the organic contamination detection means for detecting the organic contamination by performing a Fourier transform on the organic contamination. 4. A wavelength band in a light source side for a wavelength band having a resonance spectrum of an organic substance as the infrared ray or the near infrared ray for detecting the organic contamination, and detecting the intensity of the probing light after passing through an object to be measured. The organic contamination detection / removal device according to claim 1 or 2, further comprising the organic contamination detection means for detecting the organic contamination. 5. The organic light detecting device, wherein the probing light is polarization-separated into a p-wave or an s-wave, and the polarization-separated p-wave or s-wave is irradiated on a semiconductor silicon wafer as an inspection object to detect the organic contamination. 5. The method according to claim 4, further comprising a contamination detecting means.
Organic contamination detection / removal device according to 1. 6. The pair of opposed trenches on the semiconductor silicon wafer, wherein the (100) plane or the (110) plane is formed by chemical etching , and the critical angle according to the angle of the formed trench. The organic contamination detection / removal device according to any one of claims 1 to 5, further comprising the organic contamination detection means for detecting the organic contamination by making the probing light incident. Wherein said pair of opposing trench on the semiconductor silicon wafer, organic contamination detection, as set forth in Tei Ru claim 1 is formed by ion milling whatever plane to any one of claims 6
Removal device. Wherein said semiconductor silicon wafer, organic contamination detection and removal apparatus according to claims 1 Ru Tei is double-sided polishing to any one of claims 7. 9. The semiconductor integrated circuit according to claim 1, wherein the pair of opposed trenches on the semiconductor silicon wafer form a semiconductor integrated circuit including not only an end region but also a semiconductor integrated circuit between the semiconductor integrated circuits. organic contamination detection and removal apparatus according to any one of claims 1 to 8 Ru Tei formed in the city abandoned areas. 10. The semiconductor integrated circuit, wherein the pair of opposed trenches on the semiconductor silicon wafer form a semiconductor integrated circuit including not only an end region but also a semiconductor integrated circuit between the semiconductor integrated circuits on the semiconductor silicon wafer. A plurality of pairs of a plurality of columns, rows, and diagonals of a discarded region that is not disposed, wherein the infrared rays or the near infrared rays are incident on the pair of opposed trenches adjacent to each other in the same row, and the organic layer is formed. 10. The organic contamination detecting means for detecting contamination.
Organic contamination detection / removal device according to 1. 11. A semiconductor silicon wafer in the middle of a semiconductor manufacturing process, not only in an end region but also in a discarded region where a semiconductor integrated circuit is not formed, including a region between semiconductor integrated circuits. 9. The organic contamination detection sensor according to claim 1, wherein a silicon wafer piece for multiple reflection detection, which includes a tapered end surface that is a half of a trench at an end surface of the wafer, is attached as an organic contamination detection sensor. Organic contamination detection and removal equipment. 12. The optical dry cleaning mechanism comprises: means for irradiating a pulsed light from an irradiation light source for removing organic substances, and simultaneously irradiating the entire surface of the semiconductor silicon wafer; The organic contamination detection / removal device according to any one of claims 1 to 11, further comprising means for controlling overall irradiation energy by control. 13. The optical dry cleaning mechanism, wherein an irradiation light source for removing an organic substance emits pulsed light, and the semiconductor silicon wafer surface is partially irradiated, and the organic contamination detection result of each of the pair of opposed trenches is provided. depending on, the duration and the control of the pulse emission speed of the pulsed light, of claims 1 to 1 1 and a means for controlling the optimum overall irradiation energy to the region of each pair of opposing trench The organic contamination detection / removal device according to any one of the preceding claims. 14. Organic contamination detection and removal apparatus according to any one of claims 1 to 3 claim 1 having a device for supplying a semiconductor silicon wafer as continuously the inspection object. 15. A vacuum container for enclosing the entire organic contamination detecting / removing device in a vacuum atmosphere, and means for removing removed organic substances or foreign substances to the outside when the vacuum container is evacuated. organic contamination detection and removal apparatus according to any one of claims 1 to 4 claim 1. To 16. wherein said organic contamination detection and removal device in the apparatus, organic matter according to any one of claims 1 to 4 claim 1 having the electrostatic electrode to eliminate the outside to collect fine particles decomposed Organic contamination detection and removal equipment. 17. The method according to claim 17, wherein the organic contamination detection means causes infrared rays to enter the end face of one of the opposed trenches and be reflected multiple times within the semiconductor silicon wafer, and then be subjected to spectral analysis from infrared rays emitted from the end face of the other opposed trench. Detecting the organic contamination, and, by the optical dry cleaning mechanism, removing the organic contamination when it is determined that the organic contamination is present; and detecting the organic contamination again to determine whether the organic contamination has been removed. 2. The method for detecting and removing organic contamination of the apparatus for detecting and removing organic contamination according to claim 1, further comprising the step of checking by means. 18. The near-infrared ray which covers the wavelength region of the fundamental resonance spectrum having a harmonic (second harmonic) or a third harmonic (third harmonic) instead of the infrared ray by the organic contamination detecting means. 3. The method for detecting and removing organic contamination according to claim 2, further comprising the step of detecting the organic contamination. 19. A light having a wavelength component in a whole wavelength band of a resonance spectrum of an organic substance as the infrared light or the near infrared light for detecting the organic contamination by the organic contamination detection means, is determined as a probing light, and is measured. 4. The organic contamination detection / removal method of the organic contamination detection / removal device according to claim 3, further comprising a step of performing a Fourier transform on the probing light after passing through the target to detect the organic contamination. 20. The organic contaminant detecting means sweeps a wavelength band having a resonance spectrum of an organic substance as the infrared ray or the near infrared ray for detecting the organic contamination on the light source side, and after passing through the object to be measured. 5. The method of claim 4, further comprising the step of detecting the level of the organic contamination by detecting the intensity of the probing light. 21. The organic contamination detection means, wherein the probing light is polarization-separated into a p-wave or an s-wave, and the polarization-separated p-wave or s-wave is irradiated on a semiconductor silicon wafer as an inspection object, The organic contamination detection / removal method of the organic contamination detection / removal device according to claim 5, further comprising a step of performing a Fourier transform on the probing light after passing through the measured object to detect the organic contamination. 22. The organic contamination according to claim 6, further comprising the step of detecting the organic contamination by making the probing light incident at a critical angle or less according to the angle of the formed trench by the organic contamination detection means. Organic contamination detection and removal method of the detection and removal device. 23. The organic contamination detecting means according to claim 10, further comprising a step of detecting the organic contamination by making the infrared ray or the near infrared ray incident on the pair of adjacent trenches in the same row. Organic pollution detection and removal method of organic pollution detection and removal equipment. 24. The observation surface, which is the surface of the semiconductor silicon wafer between one of the pair of opposed trenches and the other of the opposed trenches on the pair of opposed trenches on the semiconductor silicon wafer, is advanced during each semiconductor manufacturing process. Is a step of protecting with a protective film, a step of removing organic matter before the start of observation by the optical dry cleaning mechanism, and a step of exfoliating the protective film at the start of observation to expose the surface. Claim 1 to Claim 11 having
An organic contamination detection / removal method of the organic contamination detection / removal device according to any one of the preceding claims . 25. A step of performing pulsed light emission by an irradiation light source for removing organic substances and simultaneously irradiating the entire surface of the semiconductor silicon wafer, and controlling the duration of the pulsed light emission and the number of pulsed light emission, thereby performing comprehensive irradiation. organic contamination detection and removal method of the organic contamination detection and removal apparatus of claim 1 2 comprising a step of controlling the energy. 26. A method according to claim 26, further comprising the steps of: performing pulsed light emission by an irradiation light source for removing an organic substance; and partially irradiating a surface of the semiconductor silicon wafer; the control duration and pulse emission of the number of, claims 1 to 3 and a step of controlling the optimum overall irradiation energy to the region of each pair of opposing trench
Organic contamination detection / removal method of the organic contamination detection / removal device described in (1) 27. Claim 1 4 Organic contamination detection and removal method of the organic contamination detection and removal system according to with supplying a semiconductor silicon wafer as continuously the inspection object. 28. The organic contamination detection / removal method of the organic contamination detection / removal device according to claim 15 , further comprising the step of removing the removed organic matter or foreign matter to the outside when the inside of the vacuum vessel is evacuated. 29. The organic contamination detection / removal method of the organic contamination detection / removal device according to claim 16 , further comprising the step of collecting fine particles in which organic substances are decomposed by the electrostatic electrode and removing the particles to the outside. In the chemical contamination detection and removal apparatus in 30. semiconductor silicon wafer production process, it is formed on a semiconductor silicon wafer as an inspection object
And a pair of opposing trench facing is, the counter Torre
After an infrared ray is incident from one end face of the trench and is reflected multiple times inside the semiconductor silicon wafer, the
Chemical contamination detecting means for detecting chemical contamination by spectral analysis from infrared light emitted from the other end face, an optical dry cleaning mechanism for removing the chemical contamination when it is determined that the chemical contamination is present, A chemical contamination detection / removal device, wherein means for checking again whether or not removal has been performed by the chemical contamination detection means is provided in the same device. 31. The chemical contamination detection means, wherein infrared rays are incident from one end face of the opposite trench and multiple-reflected inside the semiconductor silicon wafer, and then spectral analysis is performed from infrared rays emitted from the other opposite trench end face. Detecting the chemical contamination, and, if the optical dry cleaning mechanism determines that the chemical contamination is present, removing the chemical contamination; and again detecting whether the chemical contamination has been removed. chemical contamination detection and removal methods of chemical contamination detection and removal apparatus of claim 3 0, characterized in that it comprises a step of checking by means.