CN103824788A - Groove bottom particle detection method - Google Patents
Groove bottom particle detection method Download PDFInfo
- Publication number
- CN103824788A CN103824788A CN201210470081.2A CN201210470081A CN103824788A CN 103824788 A CN103824788 A CN 103824788A CN 201210470081 A CN201210470081 A CN 201210470081A CN 103824788 A CN103824788 A CN 103824788A
- Authority
- CN
- China
- Prior art keywords
- attenuate
- microns
- silicon wafer
- mode
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Abstract
The invention discloses a groove bottom particle detection method. The method comprises the following steps: silicon wafer thinning is performed after a groove is formed, wherein the thickness of the thinned silicon wafer is greater than the depth of the groove at least by 10 microns; and then, imaging is performed on the bottom of the groove from the back surface of the silicon wafer through the infrared interference detection method to observe groove bottom particle condition. According to the invention, advantages, such as fast speed, high efficiency, wide inspection range, etc., can be realized.
Description
Technical field
The present invention relates to a kind of particle detection method in semiconductor manufacture, particularly relate to a kind of detection method of channel bottom particle.
Background technology
Along with the development of semiconductor technology, more and more higher to the depth requirements of groove, as having from 10 microns to 200 microns, but along with technical development may have darker requirement.
At present, more gash depth is approximately 10 to 200 microns, for the bottom particle of groove, traditional scan method can not have been found these channel bottom particles, can only go to understand channel bottom distribution of particles situation by section one by one, but this method detection speed is slow, efficiency is low, and the scope of inspection is little, can not reflect the particle situation of whole.
Therefore, how to find fast that channel bottom particle has become a major issue urgently to be resolved hurrily.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of detection method of channel bottom particle.By the method, can carry out quickly and efficiently the particle condition detection of channel bottom.
For solving the problems of the technologies described above, the detection method of channel bottom particle of the present invention, comprise: form laggard row wafer thinning at groove, at least thick 10 microns than gash depth of silicon wafer thicknesses after attenuate, then, the mode that adopts infrared interference to survey, carries out imaging from silicon chip back side to channel bottom, observes the particle situation of channel bottom.
The detection method of described channel bottom particle, its concrete steps comprise:
1) adopt plasma silicon etching method, form groove at silicon chip surface;
2) attach at front side of silicon wafer the blue film that one deck shields;
3) mode of employing silicon chip back side attenuate, by wafer thinning, wherein, at least thick 10 microns than the degree of depth of groove of the silicon wafer thicknesses after attenuate;
4) take the blue film of front side of silicon wafer off;
5) silicon chip back side after attenuate is carried out to polishing;
6) method of employing infrared laser transmission, the particle situation of observing channel bottom from the back side of silicon chip.
In described step 1), while adopting plasma silicon etching method, silicon chip surface is formed mask plate or is carried out etching with the form of hard mask plate by the mode that applies photoresist, to form groove; Wherein, the thickness of photoresist is 1～4 micron; The material of hard mask plate comprises: oxide-film, nitride film or nitrogen oxidation film, and thickness is 5000 dust～4 micron; The degree of depth of groove is 10～700 microns.
Described step 2) in, the thickness of blue film is 100～200 microns, the bondline thickness in blue film is between 20 microns to 100 microns.
In described step 3), the silicon wafer thickness after attenuate is on the basis of gash depth, to increase by 10～100 microns, wherein, in the time that the silicon wafer thickness after attenuate is more than or equal to 160 microns, adopts conventional attenuate mode to carry out attenuate; In the time that the silicon wafer thickness after attenuate is less than 160 microns, adopt the mode of attenuate in romote antiquity to carry out.
In the blue film of taking front side of silicon wafer off of described step 4), in the time that the silicon wafer thickness after attenuate is more than or equal to 160 microns, adopt conventional blue film to remove mode; In the time that the silicon wafer thickness after attenuate is less than 160 microns, employing film stripping machine in romote antiquity is taken off film.
In the polishing of described step 5), the mode that adopts wet liquid medicine polishing or mechanochemistry to grind is carried out polishing, wherein, wet liquid medicine polishing mode is that admixing medical solutions by containing 5% hydrofluoric acid, 40% nitric acid, 10% sulfuric acid, 20% phosphoric acid carries out polishing as silicon etching liquid; In the time that the silicon wafer thickness after attenuate is greater than 400 microns, adopt the mode that mechanochemistry is ground to substitute wet liquid medicine polishing.
In described step 6), adopt the method for infrared laser transmission, can or detect machine and carry out by all measurement platforms that contain infrared transmission.
The present invention adopts a kind of brand-new method, observes the particle situation of deep trench bottom.By the method, can find the distribution of particles situation of channel bottom with fast speed, larger scope, therefore, the present invention has the advantages such as speed is fast, efficiency is high, examination scope is wide.
Accompanying drawing explanation
Below in conjunction with accompanying drawing and embodiment, the present invention is further detailed explanation:
Fig. 1 is the schematic diagram after groove forms;
Fig. 2 is the silicon chip schematic diagram having pasted after blue film;
Fig. 3 is the schematic diagram after wafer thinning;
Fig. 4 is the effect schematic diagram after blue film removes;
Fig. 5 is the photo under the multiplying power of 2 times of infrared laser transmissions, and its board model is PHEMOS1000;
Fig. 6 is the channel bottom photo after infrared laser transmission, and its board model is PHEMOS1000.
In figure, description of reference numerals is as follows:
1 is silicon chip, and 2 is groove, and 3 is particle, and 4 is blue film.
Embodiment
The detection method of channel bottom particle of the present invention, by form laggard row silicon chip 1 attenuate at groove, at least thick 10 microns of silicon chip 1 Thickness Ratio groove 2 degree of depth after attenuate, then, the mode that adopts infrared interference to survey, from silicon chip 1 back side, imaging is carried out in groove 2 bottoms, observe particle 3 situations of channel bottom.
The concrete steps of above-mentioned detection method can be as follows:
1) adopt plasma silicon etching method, form the degree of depth on silicon chip 1 surface and be the groove 2(of 10～700 microns as shown in Figure 1);
In this step, silicon chip surface is formed mask plate or is carried out etching with the form of hard mask plate by the mode that applies photoresist, to form groove; Wherein, the thickness of photoresist is 1～4 micron; The material of hard mask plate can be oxide-film (as silicon oxide film), nitride film (as silicon nitride film) or nitrogen oxidation film (as silicon oxynitride film), and thickness is 5000 dust～4 micron.
2) the blue film 4(shielding at the positive attaching one deck of silicon chip 1 is as shown in Figure 2), wherein, the thickness of blue film 4 is 100～200 microns, the bondline thickness in blue film 4 is between 20 microns to 100 microns.
3) mode of employing silicon chip 1 thinning back side, by silicon chip 1 attenuate (as shown in Figure 3), wherein, at least thick 10 microns of the degree of depth of the silicon chip 1 Thickness Ratio groove 2 after attenuate increases by 10～100 microns as silicon chip 1 thickness after attenuate can be on the basis of groove 2 degree of depth;
Wherein, in the time that silicon chip 1 thickness after attenuate is more than or equal to 160 microns, adopt conventional attenuate mode to carry out attenuate; In the time that silicon chip 1 thickness after attenuate is less than 160 microns, adopt the mode of attenuate in romote antiquity to carry out.
4) the blue film 4(that takes silicon chip 1 front off as shown in Figure 4); Wherein, in the time that silicon chip 1 thickness after attenuate is more than or equal to 160 microns, adopt conventional blue film 4 to remove mode, be placed in smooth taking off on film platform by wafer and use adhesive tape that blue surface film is taken off; In the time that silicon chip 1 thickness after attenuate is less than 160 microns, employing film stripping machine in romote antiquity is taken off film.
5) mode that adopts wet liquid medicine polishing or mechanochemistry to grind, carries out polishing by 1 back side of the silicon chip after attenuate;
Wherein, wet liquid medicine polishing mode is that admixing medical solutions by containing 5% hydrofluoric acid, 40% nitric acid, 10% sulfuric acid, 20% phosphoric acid carries out polishing as silicon etching liquid; In the time that silicon chip 1 thickness after attenuate is greater than 400 microns, adopt the mode that mechanochemistry is ground to substitute wet liquid medicine polishing.
6) by the measurement platform or the detection machine that contain infrared transmission, with the method for infrared laser transmission, observe particle 3 situations of groove 2 bottoms from the back side of silicon chip 1.Wherein, the photo under the less multiplying power of infrared laser transmission, as shown in Figure 5, forms groove figure distribution map clearly.And channel bottom photo after infrared laser transmission as shown in Figure 6, forms channel bottom image clearly, in the time having particle at channel bottom, can in the black lines in Fig. 6, there is white image, and then find particle.
Now with more concrete example, the present invention will be described.
Example 1
The detection method of channel bottom particle of the present invention, its flow process can be as follows:
1), on silicon chip 1, use the photoresist exposure of 4 micron thickness to form groove 2 mask plates.
2) method of use plasma etching, the formation degree of depth is the groove 2(deep trench of 30 microns).
3) ashing board is removed photomask surface glue with photoresist.
4) protect blue film 4 at the positive one deck that attaches of silicon chip 1, wherein, the thickness of blue film 4 is 165 microns, 20 microns of the bondline thicknesss in blue film 4.
5) adopt attenuate mode in romote antiquity, silicon chip 1 is thinned to 80 micron thickness.
6) use special film stripping machine in romote antiquity, the blue film 4 of whole subsides is removed.
7) by contain 5%(volume very than) admixing medical solutions of hydrofluoric acid, 40% nitric acid, 10% sulfuric acid, 20% phosphoric acid is as silicon etching liquid, uses back-etching board silicon chip 1 back-etching to be fallen to the silicon damage layer of 5 microns, realizes silicon chip 1 polished backside.
8) by containing the measurement platform of infrared transmission, to use the method for infrared ray perspective, carry out groove 2 bottom imagings, observe particle 3 situations of groove 2 bottoms.
According to method of the present invention, there is the advantages such as detection speed is fast, efficiency is high, examination scope is wide for the particle detection of channel bottom, and can reflect the particle situation of whole.
Claims (8)
1. the detection method of a channel bottom particle, it is characterized in that, described detection method comprises: form laggard row wafer thinning at groove, at least thick 10 microns than gash depth of silicon wafer thicknesses after attenuate, then, the mode that adopts infrared interference to survey, carries out imaging from silicon chip back side to channel bottom, observes the particle situation of channel bottom.
2. the method for claim 1, is characterized in that: the detection method of described channel bottom particle, and its step comprises:
1) adopt plasma silicon etching method, form groove at silicon chip surface;
2) attach at front side of silicon wafer the blue film that one deck shields;
3) mode of employing silicon chip back side attenuate, by wafer thinning, wherein, at least thick 10 microns than the degree of depth of groove of the silicon wafer thicknesses after attenuate;
4) take the blue film of front side of silicon wafer off;
5) silicon chip back side after attenuate is carried out to polishing;
6) method of employing infrared laser transmission, the particle situation of observing channel bottom from the back side of silicon chip.
3. method as claimed in claim 2, is characterized in that: in described step 1), while adopting plasma silicon etching method, silicon chip surface is formed mask plate or carried out etching with the form of hard mask plate by the mode that applies photoresist, to form groove; Wherein, the thickness of photoresist is 1～4 micron; The material of hard mask plate comprises: oxide-film, nitride film or nitrogen oxidation film, and thickness is 5000 dust～4 micron; The degree of depth of groove is 10～700 microns.
4. method as claimed in claim 2, is characterized in that: described step 2) in, the thickness of blue film is 100～200 microns, the bondline thickness in blue film is between 20 microns to 100 microns.
5. method as claimed in claim 2, it is characterized in that: in described step 3), the silicon wafer thickness after attenuate is on the basis of gash depth, to increase by 10～100 microns, wherein, in the time that the silicon wafer thickness after attenuate is more than or equal to 160 microns, adopt conventional attenuate mode to carry out attenuate; In the time that the silicon wafer thickness after attenuate is less than 160 microns, adopt the mode of attenuate in romote antiquity to carry out.
6. method as claimed in claim 2, is characterized in that: in the blue film of taking front side of silicon wafer off of described step 4), in the time that the silicon wafer thickness after attenuate is more than or equal to 160 microns, adopt conventional blue film to remove mode; In the time that the silicon wafer thickness after attenuate is less than 160 microns, employing film stripping machine in romote antiquity is taken off film.
7. method as claimed in claim 2, it is characterized in that: in the polishing of described step 5), the mode that adopts wet liquid medicine polishing or mechanochemistry to grind is carried out polishing, wherein, wet liquid medicine polishing mode is that admixing medical solutions by containing 5% hydrofluoric acid, 40% nitric acid, 10% sulfuric acid, 20% phosphoric acid carries out polishing as silicon etching liquid; In the time that the silicon wafer thickness after attenuate is greater than 400 microns, adopt the mode that mechanochemistry is ground to substitute wet liquid medicine polishing.
8. method as claimed in claim 2, is characterized in that: in described step 6), adopting the method for infrared laser transmission, is that measurement platform or the detection machine by containing infrared transmission carries out.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210470081.2A CN103824788A (en) | 2012-11-19 | 2012-11-19 | Groove bottom particle detection method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210470081.2A CN103824788A (en) | 2012-11-19 | 2012-11-19 | Groove bottom particle detection method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103824788A true CN103824788A (en) | 2014-05-28 |
Family
ID=50759779
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210470081.2A Pending CN103824788A (en) | 2012-11-19 | 2012-11-19 | Groove bottom particle detection method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103824788A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106653654A (en) * | 2016-11-01 | 2017-05-10 | 上海华力微电子有限公司 | Particle monitoring method of multi-step dry method etching machine |
| CN106847724A (en) * | 2017-02-08 | 2017-06-13 | 上海华虹宏力半导体制造有限公司 | The method for monitoring deep plough groove etched depth uniformity |
| CN106847725A (en) * | 2017-02-08 | 2017-06-13 | 上海华虹宏力半导体制造有限公司 | The method for monitoring deep plough groove etched depth uniformity |
| CN114864413A (en) * | 2022-04-26 | 2022-08-05 | 扬州赛诺高德电子科技有限公司 | Etching process of ultrathin metal radiating fin |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11176898A (en) * | 1997-12-09 | 1999-07-02 | Advantest Corp | Apparatus and method for detecting and removing organic contamination and apparatus and method for detecting and removing chemical contamination |
| CN101127315A (en) * | 2006-08-14 | 2008-02-20 | 雅马哈株式会社 | Method and apparatus for inspection of wafer and semiconductor device |
| CN101131317A (en) * | 2007-09-20 | 2008-02-27 | 华中科技大学 | Method and device for measuring micro-nano deep groove structure |
| CN101393015A (en) * | 2008-10-17 | 2009-03-25 | 华中科技大学 | On-line measurement method and device for micro/nano deep trench structure |
| KR20090076117A (en) * | 2008-01-07 | 2009-07-13 | 삼성테크윈 주식회사 | Method for inspecting defect of substrate raw material |
| US7738113B1 (en) * | 2005-09-29 | 2010-06-15 | Tamar Technology, Inc. | Wafer measurement system and apparatus |
| JP4707885B2 (en) * | 2001-06-26 | 2011-06-22 | 浜松ホトニクス株式会社 | Photodetector |
| WO2011115041A1 (en) * | 2010-03-17 | 2011-09-22 | 東京エレクトロン株式会社 | Semiconductor device manufacturing method and semiconductor device |
| CN102460672A (en) * | 2009-06-23 | 2012-05-16 | 大卫·S·马克斯 | System for directly measuring depth of high aspect ratio etched feature on wafer |
-
2012
- 2012-11-19 CN CN201210470081.2A patent/CN103824788A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11176898A (en) * | 1997-12-09 | 1999-07-02 | Advantest Corp | Apparatus and method for detecting and removing organic contamination and apparatus and method for detecting and removing chemical contamination |
| JP4707885B2 (en) * | 2001-06-26 | 2011-06-22 | 浜松ホトニクス株式会社 | Photodetector |
| US7738113B1 (en) * | 2005-09-29 | 2010-06-15 | Tamar Technology, Inc. | Wafer measurement system and apparatus |
| CN101127315A (en) * | 2006-08-14 | 2008-02-20 | 雅马哈株式会社 | Method and apparatus for inspection of wafer and semiconductor device |
| CN101131317A (en) * | 2007-09-20 | 2008-02-27 | 华中科技大学 | Method and device for measuring micro-nano deep groove structure |
| KR20090076117A (en) * | 2008-01-07 | 2009-07-13 | 삼성테크윈 주식회사 | Method for inspecting defect of substrate raw material |
| CN101393015A (en) * | 2008-10-17 | 2009-03-25 | 华中科技大学 | On-line measurement method and device for micro/nano deep trench structure |
| CN102460672A (en) * | 2009-06-23 | 2012-05-16 | 大卫·S·马克斯 | System for directly measuring depth of high aspect ratio etched feature on wafer |
| WO2011115041A1 (en) * | 2010-03-17 | 2011-09-22 | 東京エレクトロン株式会社 | Semiconductor device manufacturing method and semiconductor device |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106653654A (en) * | 2016-11-01 | 2017-05-10 | 上海华力微电子有限公司 | Particle monitoring method of multi-step dry method etching machine |
| CN106653654B (en) * | 2016-11-01 | 2019-07-12 | 上海华力微电子有限公司 | A kind of method of multi-step dry etching board particle monitoring |
| CN106847724A (en) * | 2017-02-08 | 2017-06-13 | 上海华虹宏力半导体制造有限公司 | The method for monitoring deep plough groove etched depth uniformity |
| CN106847725A (en) * | 2017-02-08 | 2017-06-13 | 上海华虹宏力半导体制造有限公司 | The method for monitoring deep plough groove etched depth uniformity |
| CN106847724B (en) * | 2017-02-08 | 2019-08-13 | 上海华虹宏力半导体制造有限公司 | The method for monitoring deep plough groove etched depth uniformity |
| CN106847725B (en) * | 2017-02-08 | 2019-10-11 | 上海华虹宏力半导体制造有限公司 | The method for monitoring deep plough groove etched depth uniformity |
| CN114864413A (en) * | 2022-04-26 | 2022-08-05 | 扬州赛诺高德电子科技有限公司 | Etching process of ultrathin metal radiating fin |
| CN114864413B (en) * | 2022-04-26 | 2023-09-15 | 扬州赛诺高德电子科技有限公司 | Etching process of ultrathin metal radiating fin |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI823493B (en) | Wafer-level etching methods for planar photonics circuits and devices | |
| CN108962924B (en) | Method of forming an absorption enhancement structure for an image sensor | |
| CN103824788A (en) | Groove bottom particle detection method | |
| CN107112315B (en) | Semiconductor devices and its manufacturing method | |
| CN102832223B (en) | Wafer thinning method | |
| CN104681573A (en) | Solid-state imaging element, manufacturing method, and electronic device | |
| US20120200749A1 (en) | Imagers with structures for near field imaging | |
| CN103227111B (en) | The manufacture method of semiconductor device | |
| CN109065449A (en) | The thining method of epitaxial structure | |
| CN106558529A (en) | Shallow trench isolation method | |
| CN104201146A (en) | Formation method for double-shallow trench isolator | |
| JP5639985B2 (en) | Semiconductor pressure sensor and manufacturing method of semiconductor pressure sensor | |
| CN102825541B (en) | Wafer thinning method | |
| CN106847724B (en) | The method for monitoring deep plough groove etched depth uniformity | |
| JP2008147332A (en) | Solid-state imaging device, manufacturing method thereof and imaging apparatus | |
| CN104347385A (en) | Selective etching method of semiconductor device, and manufacture method of BSI image sensor | |
| Zhao et al. | Wafer backside thinning process integrated with post-thinning clean and TSV exposure recess etch | |
| CN105215840A (en) | A kind of thining method of silicon through hole | |
| CN104201147A (en) | Formation method for double-shallow trench isolator | |
| JP2008192762A (en) | Method of manufacturing semiconductor device, and semiconductor device | |
| CN105378910B (en) | For forming the apparatus and method of the alignment characteristics of the back side process of chip | |
| CN104916652A (en) | Method for manufacturing metal wiring and method for manufacturing solid state imaging device | |
| Hirai et al. | A study of vertical lithography for high-density 3D structures | |
| CN105448943B (en) | A kind of backside-illuminated sensor and its manufacture craft | |
| CN108899302A (en) | A kind of back-illuminated type CMOS sensor singualtion method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20140528 |
|
| RJ01 | Rejection of invention patent application after publication |