CN104122266B - Solar silicon wafers high-speed line scanning photoluminescence imaging detection device - Google Patents
Solar silicon wafers high-speed line scanning photoluminescence imaging detection device Download PDFInfo
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- CN104122266B CN104122266B CN201310155633.5A CN201310155633A CN104122266B CN 104122266 B CN104122266 B CN 104122266B CN 201310155633 A CN201310155633 A CN 201310155633A CN 104122266 B CN104122266 B CN 104122266B
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Abstract
nullThe invention discloses a kind of solar silicon wafers high-speed line scanning photoluminescence imaging detection device，Including frame、Silicon wafer conveying mechanism、Generating device of laser、Fluorescence imaging module and image acquisition and processing module，Described generating device of laser、At least one fluorescence imaging module and image acquisition and processing module are fixedly arranged in frame respectively，Silicon wafer conveying mechanism can carry silicon chip to be detected and arrive detection position，Generating device of laser can launch the silicon chip to be detected of laser rays the irradiating and detecting position being perpendicular to the silicon chip direction of motion，Fluorescence imaging module can detect and be messaging in image acquisition and processing module to the fluorescence signal that the silicon chip of detection position sends and is analyzed and processes，The present invention greatly improves photoluminescence imaging technique and silicon materials detects the signal to noise ratio of speed and final image，Be suitable on product line detects application in real time.
Description
Technical field
The present invention relates to a kind of solar silicon wafers detecting system, photic particularly to a kind of solar silicon wafers high-speed line scanning
Fluorescence imaging detection equipment.
Background technology
Solar silicon wafers photoluminescence imaging (PL, Photoluminescence imaging) detection technique is in recent years
A kind of quickly silicon materials detection technique occurred along with the development of photovoltaic industry.This technology uses high power laser to excite
Light source, by high-pass filter by same for fluorescence separation by laser, then uses the highly sensitive camera of near-infrared to carry out fluoroscopic image
Gather.This technology can carry out fast imaging to fluorescent, it is possible to meets the requirement of quickly detection, is suitable for the real-time inspection producing on line
Survey application.PL can be used for the silicon ingot to different phase, silicon chip detection, operation stage includes: the section of silicon ingot, silicon chip, making herbs into wool silicon chip,
Diffusion silicon chip, cleaning silicon chip, PECVD silicon chip and resultant battery sheet.Application PL technology can detect that the defect kind of sample has: black
Core, black surround, crystal boundary, hidden split, diffusion problem, edge isolation problem, electric leakage, Sintering Problem and contact resistance problem etc..
The photoluminescence of solar energy original silicon chip extremely inefficient (< 10^-8), in early days in order to detect this series products, typically selects
Select near-infrared response enhanced type silicon CCD and strengthen laser excitation power simultaneously.But detection sample is similarly silicon materials, detector
Sensitivity curve only seldom partly overlaps with the fluorescence spectrum of silicon chip, is therefore difficult to promote detection efficient, thus limits inspection
Degree of testing the speed and the lifting of signal to noise ratio.
Use InGaAs image detector detection silicon materials fluorescence, started from the earliest in 2005 first by photoluminescence imaging
Introducing the T.Trupke of solar silicon wafers detection field, feature is the fluorescence light that its sensitivity spectrum can be completely covered silicon materials
Spectrum, therefore, it is possible to realize quickly detection, but owing to face battle array InGaAs camera price is the highest and the problem such as lack of resolution, limits
Its extensive commercial application.Comparatively speaking, line scanning InGaAs detector comparative maturity, in resolution and in price
There is bigger advantage.Line scanning InGaAs detector the most how is applied to build solar silicon wafers photoluminescence image checking system
System becomes the hot technology in industry.
Summary of the invention
In order to make up above deficiency, the invention provides a kind of solar silicon wafers high-speed line scanning photoluminescence image checking
Equipment, this solar silicon wafers high-speed line scanning photoluminescence imaging detection device greatly improves photoluminescence imaging technique pair
The detection speed of silicon materials and the signal to noise ratio of final image, be suitable on product line detects application in real time, saves production cost.
The present invention is to solve that its technical problem be the technical scheme is that a kind of solar silicon wafers high-speed line scanning light
Cause fluorescence imaging detection equipment, including frame, silicon wafer conveying mechanism, generating device of laser, fluorescence imaging module and image acquisition-
Processing module, described generating device of laser, at least one fluorescence imaging module and image acquisition-processing module are fixedly arranged on machine respectively
On frame, silicon wafer conveying mechanism can carry silicon chip to be detected and arrive detection position, and generating device of laser can be launched and is perpendicular to silicon
The laser rays of the sheet direction of motion the silicon chip to be detected of irradiating and detecting position, fluorescence imaging module can be to the silicon chip of detection position
The fluorescence signal sent carries out detecting and be messaging in image acquisition-processing module and is analyzed and processes.
As a further improvement on the present invention, described generating device of laser includes laser rays lighting module and optical fiber coupling half
Conductor laser, laser rays lighting module is connected by fiber output head with fiber coupled laser diode, and laser rays shines
The laser shaping that fiber output head can be exported by bright module is uniform laser line ultra-fine, high.
As a further improvement on the present invention, described laser rays lighting module includes the sphere being arranged in order along radiation direction
Collimation lens set, dichroic mirror, cylindrical lens array, negative cylindrical mirror, the first positive cylindrical mirror, the second positive cylindrical mirror, cylindrical mirror group, its
In negative cylindrical mirror, cylindrical mirror group and cylindrical lens array, the first positive cylindrical mirror, the second positive cylindrical mirror type direction, face vertical.
As a further improvement on the present invention, described laser rays lighting module and fluorescence imaging module are placed in not having light
In the darkroom of line, this darkroom sidewall is provided with the slit driving silicon chip turnover darkroom for silicon wafer conveying mechanism.
As a further improvement on the present invention, described laser rays lighting module and fluorescence imaging module are positioned at silicon chip conveyer
Structure homonymy or heteropleural.
As a further improvement on the present invention, described fluorescence imaging module includes the line scanning InGaAs being arranged in order setting
Camera, imaging lens and optical filter.
As a further improvement on the present invention, the line scanning InGaAs image that described line scanning InGaAs camera is configured is visited
Survey device pixels tall more than pixel wide.
As a further improvement on the present invention, described fluorescence imaging module is additionally provided with the filter for switching different optical filter
Mating plate switching device.
As a further improvement on the present invention, being additionally provided with silicon chip minority carrier life measurement module, this silicon chip minority carrier life is measured
Fluorescent image can be calibrated by module.
The method have the benefit that: the present invention passes through high power laser homogenization narrow linewidth line lighting module to sample
The efficient of fluorescence signal is detected by efficiently excite and the line scanning InGaAs image detector of product, greatly improves photoluminescence
Silicon materials are detected the signal to noise ratio of speed and final image by imaging technique, and be suitable on product line detects application in real time.
Accompanying drawing explanation
Fig. 1 is the structural principle schematic diagram of the present invention；
Fig. 2 is the axonometric chart of the present invention；
Fig. 3 is the laser rays lighting module principle front view of the present invention；
Fig. 4 is A portion enlarged drawing in Fig. 3；
Fig. 5 is B portion enlarged drawing in Fig. 4；
Fig. 6 is the laser rays lighting module principle left view of the present invention；
Fig. 7 is C portion enlarged drawing in Fig. 6；
Fig. 8 is the fluorescence imaging module principle schematic diagram of the present invention；
Fig. 9 is that line of the present invention scans InGaAs image detection array schematic diagram；
Figure 10 is the switching device of optical fiber structural principle schematic diagram of the present invention；
Figure 11 is that the present invention uses multiple fluorescence imaging module to carry out sample detecting schematic diagram；
Figure 12 is that the present invention uses laser rays lighting module and fluorescence imaging module to be positioned at the knot of silicon wafer conveying mechanism heteropleural
Structure principle schematic；
Figure 13 is that minority carrier life time measurement module carries out calibrating principle schematic diagram to photoluminescence imaging.
Detailed description of the invention
Embodiment: a kind of solar silicon wafers high-speed line scanning photoluminescence imaging detection device, including frame, silicon chip transmission
Mechanism 1, generating device of laser, fluorescence imaging module 3 and image acquisition-processing module 4, described generating device of laser, at least
Individual fluorescence imaging module 3 and image acquisition-processing module 4 are fixedly arranged in frame respectively, and silicon wafer conveying mechanism 1 can carry to be checked
Surveying silicon chip and arrive detection position, generating device of laser can launch laser rays the irradiating and detecting position being perpendicular to the silicon chip direction of motion
The silicon chip to be detected put, the fluorescence signal that the silicon chip of detection position sends can be detected and deliver a letter by fluorescence imaging module 3
It is analyzed in image acquisition-processing module 4 and processes, generating device of laser Output of laser line, and it is radiated on silicon chip excitation
Sample makes its homogeneous radiation go out fluorescence, and the direction of laser rays is vertical with the silicon wafer linear direction of motion, and fluorescence imaging module 3 is directed at this
Laser rays the fluorescence signal giving off silicon chip detect, and meanwhile silicon wafer conveying mechanism 1 drives silicon wafer horizontal to move
Completing the scanning to whole sample, obtain the fluoroscopic image of whole sample, fluorescence imaging module 3 sends view data to image
Collection-processing module 4, the image acquisition-processing module 4 fluoroscopic image to collecting carries out computational analysis and draws testing result,
Judge sample defects type and grade, then send sorting order and to automatization's separation system, sample is sorted, wherein
Fluorescence imaging module 3 can use multiple, and be directed at laser fine rule produced by generating device of laser, each fluorescence imaging simultaneously
The fluorescence of different-waveband is acquired by module 3, can make this detection equipment simultaneously to the silicon materials fluorescence signal in sample and
Impurities of materials fluorescence signal carries out imaging detection respectively.
Described generating device of laser includes laser rays lighting module 2 and fiber coupled laser diode 6, and laser rays illuminates
Module 2 is connected by fiber output head 7 with fiber coupled laser diode 6, and laser rays lighting module 2 can be defeated by optical fiber
The laser shaping of 7 outputs of lifting one's head is uniform laser line ultra-fine, high, use fiber coupled laser diode 6 as input light source,
The diverging light exported laser fiber through laser rays lighting module 2 collimates, filters, homogenization and shaping, finally assembles
A fine rule output for brightness uniformity.
Described laser rays lighting module 2 includes sphere collimation lens set 11, the dichroic mirror being arranged in order along radiation direction
12, cylindrical lens array 13, the negative positive cylindrical mirror of cylindrical mirror 14, first 15, second positive cylindrical mirror 16, cylindrical mirror group 17, wherein bear post
The type direction, face of face mirror 14, cylindrical mirror group 17 cylindrical mirror positive with cylindrical lens array 13, first 15, second positive cylindrical mirror 16 is vertical,
The laser alignment that fiber output head 7 is exported by sphere collimation lens set 11, dichroic mirror 12 carries out low-pass filtering to laser beam
Thus eliminating veiling glare spectral content in laser, cylindrical lens array 13 carries out single direction and dissipates and uniformly incoming parallel beam
Changing, the first positive cylindrical mirror 15 and the second positive cylindrical mirror 16 are to dissipating and laser beam after homogenization collimates thus forms one
Uniform laser tape, negative cylindrical mirror 14 carries out another vertical direction to light beam and dissipates, and last laser tape is through cylindrical mirror group 17
Convergence is a uniform laser fine rule on silicon chip.
Described laser rays lighting module 2 and fluorescence imaging module 3 are placed in not having in the darkroom 8 of light, this side, darkroom 8
Wall is provided with and drives silicon chip 5 to pass in and out the slit 9 in darkroom 8 for silicon wafer conveying mechanism 1, and extraneous veiling glare can effectively be blocked to glimmering in darkroom 8
The interference of optical signal and effectively shielding high power laser light are to the leakage outside darkroom 8, and then improve detection degree of accuracy.
Described laser rays lighting module 2 and fluorescence imaging module 3 are positioned at silicon wafer conveying mechanism 1 homonymy or heteropleural, are positioned at
During homonymy, equipment volume can be made small and exquisite;When being positioned at heteropleural, the laser that sample can be avoided to reflect enters fluorescence imaging module 3.
Described fluorescence imaging module 3 includes line scanning InGaAs camera 18, imaging lens 19 and the filter being arranged in order setting
Mating plate 20, this line scanning InGaAs camera 18 sensitivity curve covers luminescence from silicon spectral region, and has higher responsiveness, becomes
As camera lens 19 is for being imaged onto silicon chip in line scanning InGaAs camera 18 through laser excitation fluorescence signal out, optical filter 20
Fluorescence signal is had higher transmitance and laser is had stronger absorption.
Line scanning InGaAs image detector 21 pixels tall that described line scanning InGaAs camera 18 is configured is more than picture
Element width, its advantage is easy for the laser fine rule alignment that fluorescence imaging module 3 produces with laser rays illumination mould.
Described fluorescence imaging module 3 is additionally provided with the switching device of optical fiber 22 for switching different optical filter 20, this filter
Mating plate switching device 22 is provided with pass filter 20 long wave pass filter different with several cutoff wavelengths 20, these optical filters
20 are possible not only to completely cut off the laser that sample is reflected, and InGaAs image detector can be made only to connect by switching different optical filters 20
Receive the silicon materials fluorescence signal near 1150nm wavelength, InGaAs image detector can be made only to receive the material more than 1200nm wavelength
Material impurity fluorescence signal, it is possible to make InGaAs image detector simultaneously receive silicon materials fluorescence signal and impurities of materials fluorescence letter
Number.Described switching device of optical fiber 22 act as switching over different optical filters 20, but is not limited to its implementation.Should
Switching device of optical fiber 22 can be rotary-disk type structure, arranges the optical filter 20 of some different sizes on rotating disk, by rotating
Rotating disk makes different optical filters 20 align with imaging lens 19, also or by arranging optical filter 20 19 times at imaging lens
Accommodating device, realizes the installation and removal of different optical filter 20 by fast quick-detach mode, also or board-like, by taking out by sliding
Draw the different optical filter 20 of realization corresponding with imaging lens 19, etc..
Being additionally provided with silicon chip minority carrier life measurement module 23, this silicon chip minority carrier life measurement module can be to fluorescent image
Calibrate.
Claims (7)
1. a solar silicon wafers high-speed line scanning photoluminescence imaging detection device, is characterized in that: include frame, silicon chip transmission
Mechanism (1), generating device of laser, fluorescence imaging module (3) and image acquisition-processing module (4), described generating device of laser,
At least one fluorescence imaging module (3) and image acquisition-processing module (4) are fixedly arranged in frame respectively, silicon wafer conveying mechanism (1)
Can carry silicon chip to be detected and arrive detection position, generating device of laser can launch the laser rays being perpendicular to the silicon chip direction of motion
And the silicon chip to be detected of irradiating and detecting position, the fluorescence signal that the silicon chip of detection position can be sent by fluorescence imaging module (3)
Carrying out detecting and be messaging in image acquisition-processing module (4) be analyzed and process, described generating device of laser includes laser rays
Lighting module (2) and fiber coupled laser diode (6), laser rays lighting module (2) and fiber coupled laser diode
(6) it is connected by fiber output head (7), the laser shaping that fiber output head (7) can be exported by laser rays lighting module (2)
For uniform laser line ultra-fine, high, described laser rays lighting module (2) includes the sphere collimating lens being arranged in order along radiation direction
Group (11), dichroic mirror (12), cylindrical lens array (13), negative cylindrical mirror (14), the first positive cylindrical mirror (15), the second positive cylindrical mirror
(16), cylindrical mirror group (17), wherein bear cylindrical mirror (14), cylindrical mirror group (17) and cylindrical lens array (13), the first positive cylindrical mirror
(15), the type direction, face of the second positive cylindrical mirror (16) is vertical.
2. solar silicon wafers high-speed line scanning photoluminescence imaging detection device as claimed in claim 1, is characterized in that: described
Laser rays lighting module (2) and fluorescence imaging module (3) are placed in not having in the darkroom (8) of light, on this darkroom (8) sidewall
It is provided with the slit (9) driving silicon chip (5) turnover darkroom (8) for silicon wafer conveying mechanism (1).
3. solar silicon wafers high-speed line scanning photoluminescence imaging detection device as claimed in claim 1, is characterized in that: described
Laser rays lighting module (2) and fluorescence imaging module (3) are positioned at silicon wafer conveying mechanism (1) homonymy or heteropleural.
4. solar silicon wafers high-speed line scanning photoluminescence imaging detection device as claimed in claim 1, is characterized in that: described
Fluorescence imaging module (3) includes line scanning InGaAs camera (18), imaging lens (19) and the optical filter being arranged in order setting
(20)。
5. solar silicon wafers high-speed line scanning photoluminescence imaging detection device as claimed in claim 4, is characterized in that: described
Line scanning InGaAs image detector (21) pixels tall that line scanning InGaAs camera (18) is configured is more than pixel wide.
6. solar silicon wafers high-speed line scanning photoluminescence imaging detection device as claimed in claim 4, is characterized in that: described
Fluorescence imaging module (3) is additionally provided with the switching device of optical fiber (22) for switching different optical filter (20).
7. solar silicon wafers high-speed line scanning photoluminescence imaging detection device as claimed in claim 1, is characterized in that: also set
Having silicon chip minority carrier life measurement module (23), fluorescent image can be calibrated by this silicon chip minority carrier life measurement module.
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| CN201310155633.5A CN104122266B (en) | 2013-04-28 | 2013-04-28 | Solar silicon wafers high-speed line scanning photoluminescence imaging detection device |
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| CN201310155633.5A CN104122266B (en) | 2013-04-28 | 2013-04-28 | Solar silicon wafers high-speed line scanning photoluminescence imaging detection device |
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| CN104122266A CN104122266A (en) | 2014-10-29 |
| CN104122266B true CN104122266B (en) | 2016-12-28 |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2016162398A1 (en) * | 2015-04-07 | 2016-10-13 | Albert-Ludwigs-Universität Freiburg | Apparatus for detecting electronic faults on silicon-based semiconductor wafers |
| TWI646323B (en) * | 2016-12-01 | 2019-01-01 | 友達晶材股份有限公司 | Silicon crystal material detection method and detection device |
| CN110646433A (en) * | 2018-06-27 | 2020-01-03 | 东泰高科装备科技（北京）有限公司 | Online detection method and device for internal defects of battery and solar battery production line |
| CN111024723A (en) * | 2019-12-26 | 2020-04-17 | 苏州市建设工程质量检测中心有限公司 | Vision application device based on fluorescent coating and processing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102253051A (en) * | 2011-05-03 | 2011-11-23 | 3i系统公司 | System for detecting defects of solar cell by using line scanning detector |
| CN102253046A (en) * | 2011-04-26 | 2011-11-23 | 3i系统公司 | Electroluminescence defect detection and IV detection integrated system for solar cell |
| CN202599842U (en) * | 2012-06-25 | 2012-12-12 | 北京合能阳光新能源技术有限公司 | Life detecting device for silicon material minority carrier |
| CN203231972U (en) * | 2013-04-28 | 2013-10-09 | 苏州中导光电设备有限公司 | Photoluminescence imaging detection equipment for high-speed line scanning of solar silicon wafers |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2011017775A1 (en) * | 2009-08-14 | 2011-02-17 | Bt Imaging Pty Ltd | Photoluminescence imaging systems for silicon photovoltaic cell manufacturing |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102253046A (en) * | 2011-04-26 | 2011-11-23 | 3i系统公司 | Electroluminescence defect detection and IV detection integrated system for solar cell |
| CN102253051A (en) * | 2011-05-03 | 2011-11-23 | 3i系统公司 | System for detecting defects of solar cell by using line scanning detector |
| CN202599842U (en) * | 2012-06-25 | 2012-12-12 | 北京合能阳光新能源技术有限公司 | Life detecting device for silicon material minority carrier |
| CN203231972U (en) * | 2013-04-28 | 2013-10-09 | 苏州中导光电设备有限公司 | Photoluminescence imaging detection equipment for high-speed line scanning of solar silicon wafers |
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Effective date of registration: 20220715 Address after: 526238 No. 20, Beijiang Avenue, high tech Zone, Zhaoqing City, Guangdong Province Patentee after: ZHONGDAO OPTOELECTRONIC EQUIPMENT CO.,LTD. Address before: 215311 Rui'an Road, Lingang Industrial Park, Bacheng Town, Kunshan City, Suzhou City, Jiangsu Province Patentee before: Suzhou Zhongdao Photoelectric Equipment Co.,Ltd. |
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