CN204789334U - Real -time quality detecting system of semiconductor films material - Google Patents
Real -time quality detecting system of semiconductor films material Download PDFInfo
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- CN204789334U CN204789334U CN201520385321.8U CN201520385321U CN204789334U CN 204789334 U CN204789334 U CN 204789334U CN 201520385321 U CN201520385321 U CN 201520385321U CN 204789334 U CN204789334 U CN 204789334U
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Abstract
The utility model discloses a real -time quality detecting system of semiconductor films material, its luminous principle of mainly utilizing the semiconductor films material detects the material characteristics such as internal defect, band gap structure and component homogeneity of material. This detecting system includes: the laser lamp -house system for a laser beam shines and waits to detect semiconductor films of set for the wavelength is provided, light signal reception system includes: light signal receiver for the film quilt is waited to detect in the collection laser beam excite and send excite light to output corresponds the detected signal, and signal display processing apparatus is used for receiving, handle and showing this detected signal, this light signal receiver be connected with signal display processing apparatus. The utility model discloses simple structure, easily operation to can carry out the luminous semi conducting material's of normal atmospheric temperature quality testing in real time on line, so can be through the testing result timely adjustment growth conditions and obtain target semi conducting material, and reduce the required cost of growing to a certain extent.
Description
Technical field
The utility model is in particular to a kind of real-time detecting system of semiconductor film material growth quality, and this detection system can detect the quality of light-emitting semiconducting material at normal temperatures in real time.
Background technology
Detection method for semiconductor film material is very general, is that the measurement after growth or the on-line measurement in growing are all very common.But current measurement means, the method comprising infrared pyrometer and RHEED is all the surface informations such as the surface topography of measurement material, cannot realize characterizing for material composition feature and bandgap structure.
For the growth of polynary semiconductor material, the band gap of the film of different component changes along with growth conditions, can detect the luminescence of material, and then real-time suitable change growth conditions, be conducive to the growth of high-quality aimed semiconductor material.
This type of measuring system is all in open position at home and abroad at present, has very large application development potential quality and space.
Utility model content
Fundamental purpose of the present utility model is to provide a kind of detection system that can detect semiconductor film material growth quality in real time, to overcome deficiency of the prior art.
In order to realize above-mentioned utility model object, the real-time quality detection system of a kind of semiconductor film material that the utility model provides can comprise:
Laser source system, in order to provide the laser beam irradiation semiconductive thin film to be detected of setting wavelength,
Optical signal reception system, comprising:
Light signal receiving, in order to gather the excitation line that film to be detected is sent by described excitation laser beam, and exports corresponding detection signal,
And Signal aspects treating apparatus, in order to receive, process and show described detection signal;
Described light signal receiving is connected with Signal aspects treating apparatus.
Among a comparatively preferred embodiment, described laser source system comprises:
In order to launch the LASER Light Source of the laser beam with setting wavelength,
And light-guiding mechanism, in order to conduct to described laser beam orientation on semiconductive thin film to be detected.
Further, described light-guiding mechanism comprises fiber grating, and the light end of described fiber grating coordinates with described LASER Light Source, and beam projecting end stretches into the growth chamber of semiconductor growing equipment and points to semiconductive thin film to be detected.
Preferably, the LASER Light Source that described LASER Light Source adopts stability to be less than 1%, such as, can select 325 laser instruments or 532 laser instruments.
Among a comparatively preferred embodiment, described optical signal reception system comprises:
Filtered optical signal device, in order to the original laser light beam that filtering film to be detected reflects, and makes described excitation line pass through;
Light signal receiving, in order to receive the described excitation line gathering and pass through from filtered optical signal device, and exports corresponding detection signal;
Photosignal multiplying assembly, the detection signal in order to export described light signal receiving carries out reinforcement process;
And Signal aspects treating apparatus, in order to receive, to process and to show the detection signal after strengthening processing that described photosignal multiplying assembly exports.
Further, described filtered optical signal device comprises optical filter.
Further, described photosignal multiplying assembly comprises photomultiplier.
Further, described light signal receiving comprises photodetector.
Further, described Signal aspects treating apparatus comprises data processing equipment and display unit, and described data processing equipment is connected with display unit and light signal receiving respectively.
Among a comparatively preferred embodiment, described real-time quality detection system is packaged in the casing of an airtight shading, and the laser beam described casing being respectively equipped with laser source system is produced exports the first window of casing and inputs the Second Window of casing in order to the excitation line of the laser beam that makes semiconductive thin film to be detected reflect and output.
Comparatively preferred, the optical centre of the filtered optical signal device in described optical signal reception system, light signal receiving and described Second Window on the same line.
Comparatively preferred, described casing is fixed on the optical table of liftable and/or translation.
Compared with prior art, advantage of the present utility model comprises: by the real-time quality detection system of this semiconductor film material, semiconductor material can be carried out by real-time online, the detection of semiconductor material that particularly can be luminous at normal temperatures, and then can by the luminescent properties of on-line checkingi material timely adjustment growth conditions, obtain aimed semiconductor material, and the cost reduced to a certain extent required for growth, the real-time quality detection system structure of this semiconductor film material is simple simultaneously, is easy to operation.
Accompanying drawing explanation
Fig. 1 is the framework schematic diagram of a kind of semiconductor film material real-time quality detection system in the utility model one embodiment;
Fig. 2 is the structured flowchart of a kind of semiconductor film material real-time quality detection system in the utility model one embodiment;
Fig. 3 is the structural representation of a kind of semiconductor film material real-time quality detection system in the utility model one embodiment;
Description of reference numerals: LASER Light Source 10, optical signal reception system 20, encapsulation casing 30, growth room 40, sample 50, laser 001, laser reflection light 002, sample luminescence 003, laser instrument 101, fiber grating 102, optical filter 201, photoelectric commutator 202, photomultiplier 203, Signal aspects treating apparatus 204, window 301, window 302, window 401.
Embodiment
The utility model mainly provides a kind of real-time quality detection system of semiconductor film material, for the defect of semiconductor film material, and bandgap structure, and component uniformity carries out examination and analysb.
Among an embodiment, described detection system can comprise laser source system and optical signal reception system.Wherein optical signal reception system mainly comprises filtered optical signal device, light signal receiving, photosignal multiplying assembly and Signal aspects treating apparatus.
Wherein, this LASER Light Source reasonably can be chosen according to grown aimed semiconductor membraneous material, and the laser instrument usually selected has 325 laser instruments and 532 laser instruments.But comparatively preferred, the stability requirement of this LASER Light Source is less than 1%.
Wherein, after the laser beam generation of this LASER Light Source, growth chamber can be transferred to by fiber grating, to guarantee the stability of laser.
Wherein, this filtered optical signal device is mainly the optical filter corresponding with laser material used, the original laser reflected through semiconductive thin film to be detected (hereinafter referred to as " film " or " sample ") can be made to be absorbed, thus reduce the impact of return laser beam for test result.
Wherein, this light signal receiving is mainly photodetector, for gathering the luminescence of sample and converting corresponding electric signal to.
Wherein, this photosignal multiplying assembly mainly photomultiplier, mainly because sample is more weak through the usual signal of the postradiation luminescence of laser, so adopt signal multiplication pipe to strengthen signal intensity.
Wherein, this Signal aspects treating apparatus mainly comprises data processing equipment and display unit, such as computing machine, and it can be used for processing signal, and shows emission wavelength and wave band.
Wherein, the intensity of the main show sample luminescence of this Signal aspects treating apparatus and wave band, and then the composition and structure feature of reflection semiconductor film material.
Wherein, be the impact avoiding described detection system to be subject to other veiling glares extraneous, among the encapsulation casing preferably this detection system being encapsulated in an airtight shading.Particularly preferred, this airtight encapsulation casing only has two window spreading out of and receiving for information on top.More preferred, this encapsulation casing can be fixed on the optical table that can be elevated and transfer with direction, to move device according to actual requirement during growth and to arrange.
Real-time quality detection system of the present utility model mainly utilizes the principle of luminosity of most of semiconductor film material to come defect, the material characteristics such as bandgap structure and component uniformity of the inside of test material.This system mainly adopts laser as signal optical source, and light source is irradiated to material surface by window, and being excited light-struck film will be luminous due to exciting of laser, and the light sent penetrates from material surface.Meanwhile, arrange optical signal reception system at window place, determination and analysis is carried out to the luminous signal of material, and then obtains the real-time information of material internal composition and bandgap structure.
Below in conjunction with drawings and Examples, the technical solution of the utility model is further explained.
Please refer to shown in Fig. 1, for implementing the framework schematic diagram of semiconductor film material real-time quality detection system of the present utility model, this system comprises LASER Light Source 10 and optical signal reception system 20.Laser 001 emits from LASER Light Source 101, the growth room 40 of semiconductor growing equipment is entered through the conduction of fiber grating 102, be radiated on sample 50, sample 50 is luminous after laser irradiates, sample luminescence 003 (stimulated luminescence) and laser reflection light 002 (original laser by reflecting) spread out of the window 401 in growth room together, after filtration after mating plate 201, laser reflection light 002 is absorbed, sample luminescence 003 is retained, and finally reaches optical signal reception system 20 and is processed and shows.
Please refer to shown in Fig. 2, for implementing the structure diagram of the main member of semiconductor film material real-time quality detection system of the present utility model, the relative position of each system unit of main manifestations and structural relation.Wherein, laser instrument 101 and fiber grating 102 are fixed on (not shown) on a support, make the window 301 of the laser emitting direction alignment package casing 30 of fiber grating 102 simultaneously.In addition, optical filter 201, photoelectric commutator 202 are placed in photomultiplier 203 simultaneously and encapsulate within casing 30, and be fixed on (not shown) on another support, and the optical centre of the window 302 of photoelectric commutator 202, optical filter 201 and encapsulation casing 30 on the same line, can ensure the accuracy of the light detected like this.From sample 50 surface, light out mainly comprises the folded light beam 002 of laser 101 and sample 50 through the postradiation stimulated luminescence 003 of laser 001, mixed light beam is after mating plate 201 after filtration, reflects laser 002 is absorbed, sample luminescence 003 is only had to be retained, by the process of photoelectric commutator 202, the sample luminescence 003 received is processed into corresponding electric signal, reach photosignal multiplier tube 203 again signal is amplified, eventually pass process and the display of Signal aspects treating apparatus 204, finally present the information such as wavelength and intensity of sample luminescence.
Please refer to shown in Fig. 3, for implementing the schematic diagram of the encapsulation casing of semiconductor film material real-time quality detection system of the present utility model, wherein two windows 301 and 302 of casing 30 should try one's best little, to ensure not have noise effect.
In addition, in order to ensure the stability of whole system, preferably packaged system being placed in can (not shown) on the optical table of damping and transfer.Before formal Semiconductor Film Growth, should the luminous situation of no load test once in whole chamber, the contrast of some assorted luminous peak positions etc. and reference during to measure as growth.
Compared with prior art, the semiconductor material 50 that light beam 001 deexcitation that the utility model is produced by laser source system 10 is growing, and then make it luminous, the folded light beam 002 of laser and the luminescence 003 of sample transmit to window 401 jointly, after mating plate 201 after filtration, return laser beam 002 is absorbed, sample excitation luminescence 003 has been retained, after the process of photoelectric commutator 202 and photosignal multiplier tube 203, the information such as emission wavelength and intensity of target sample is demonstrated by the display screen of Signal aspects treating apparatus 204, and then reflect the composition of polynary semiconductor material, bandgap structure, and the information such as the quality of internal material, like this can according to the growth requirement of target material, in real time with in good time fine setting growth temperature, the conditions such as pressure optimize the quality of materials grown, and then the cost greatly reduced required for growth.In addition, particularly for the growth of some polynary Effects of GaAs/AlGaAs Quantum Wells structures, the utility model can pass through the higher membrane structure of Optimal Growing gain of parameter quality.The Real-time and On-line that the utility model is set forth has enriched again detection in Material growth process and monitoring means, has great value for the preparation of material and growth.
Be to be understood that; above-described embodiment is the utility model preferably embodiment; but embodiment of the present utility model is not limited by the examples; change, the modification done under other any does not deviate from Spirit Essence of the present utility model and principle, substitute, combine, simplify; all should be the substitute mode of equivalence, be included within protection domain of the present utility model.
Claims (10)
1. a real-time quality detection system for semiconductor film material, is characterized in that comprising:
Laser source system, in order to provide the laser beam irradiation semiconductive thin film to be detected of setting wavelength,
Optical signal reception system, comprising:
Light signal receiving, in order to gather the excitation line that film to be detected is sent by described excitation laser beam, and exports corresponding detection signal,
And Signal aspects treating apparatus, in order to receive, process and show described detection signal;
Described light signal receiving is connected with Signal aspects treating apparatus.
2. the real-time quality detection system of semiconductor film material according to claim 1, is characterized in that described laser source system comprises:
In order to launch the LASER Light Source of the laser beam with setting wavelength,
And light-guiding mechanism, in order to conduct to described laser beam orientation on semiconductive thin film to be detected.
3. the real-time quality detection system of semiconductor film material according to claim 2, it is characterized in that described light-guiding mechanism comprises fiber grating, the light end of described fiber grating coordinates with described LASER Light Source, and beam projecting end stretches into the growth chamber of semiconductor growing equipment and points to semiconductive thin film to be detected.
4. the real-time quality detection system of semiconductor film material according to claim 2, it is characterized in that the LASER Light Source that described LASER Light Source employing stability is less than 1%, described LASER Light Source comprises 325 laser instruments or 532 laser instruments.
5. the real-time quality detection system of semiconductor film material according to claim 1, is characterized in that described optical signal reception system comprises:
Filtered optical signal device, in order to the original laser light beam that filtering film to be detected reflects, and makes described excitation line pass through;
Light signal receiving, in order to receive the described excitation line gathering and pass through from filtered optical signal device, and exports corresponding detection signal;
Photosignal multiplying assembly, the detection signal in order to export described light signal receiving carries out reinforcement process;
And Signal aspects treating apparatus, in order to receive, to process and to show the detection signal after strengthening processing that described photosignal multiplying assembly exports.
6. the real-time quality detection system of semiconductor film material according to claim 5, is characterized in that: described filtered optical signal device comprises optical filter; And/or described photosignal multiplying assembly comprises photomultiplier.
7. the real-time quality detection system of the semiconductor film material according to any one of claim 1-6, is characterized in that: described light signal receiving comprises photodetector; And/or described Signal aspects treating apparatus comprises data processing equipment and display unit, and described data processing equipment is connected with display unit and light signal receiving respectively.
8. the real-time quality detection system of the semiconductor film material according to any one of claim 1-6, it is characterized in that described real-time quality detection system is packaged in the casing of an airtight shading, the laser beam described casing being respectively equipped with laser source system is produced exports the first window of casing and inputs the Second Window of casing in order to the excitation line of the laser beam that makes semiconductive thin film to be detected reflect and output.
9. the real-time quality detection system of semiconductor film material according to claim 8, is characterized in that the optical centre of the filtered optical signal device in described optical signal reception system, light signal receiving and described Second Window on the same line.
10. the real-time quality detection system of semiconductor film material according to claim 8, is characterized in that described casing is fixed on the optical table of liftable and/or translation.
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| CN201520385321.8U CN204789334U (en) | 2015-06-05 | 2015-06-05 | Real -time quality detecting system of semiconductor films material |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108956635A (en) * | 2018-09-04 | 2018-12-07 | 邯郸学院 | A kind of film quality detection device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108956635A (en) * | 2018-09-04 | 2018-12-07 | 邯郸学院 | A kind of film quality detection device |
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Effective date of registration: 20200806 Address after: Unit 109C, A4 floor, biological nano Park, 218 Xinghu street, Suzhou Industrial Park, Jiangsu Province Patentee after: SUZHOU SUNA PHOTOELECTRIC Co.,Ltd. Address before: 215123, Suzhou, Jiangsu province Suzhou Industrial Park alone villa lake high Parish, if the waterway 398 Patentee before: SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS (SINANO), CHINESE ACADEMY OF SCIENCES |
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