CN107091822B - The device and its detection method of double light source activation luminescence generated by light detection semiconductor defects - Google Patents

The device and its detection method of double light source activation luminescence generated by light detection semiconductor defects Download PDF

Info

Publication number
CN107091822B
CN107091822B CN201710150530.8A CN201710150530A CN107091822B CN 107091822 B CN107091822 B CN 107091822B CN 201710150530 A CN201710150530 A CN 201710150530A CN 107091822 B CN107091822 B CN 107091822B
Authority
CN
China
Prior art keywords
light source
semiconductor
laser light
luminescence generated
detection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201710150530.8A
Other languages
Chinese (zh)
Other versions
CN107091822A (en
Inventor
胡小波
陈少强
翁国恩
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
East China Normal University
Original Assignee
East China Normal University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by East China Normal University filed Critical East China Normal University
Priority to CN201710150530.8A priority Critical patent/CN107091822B/en
Publication of CN107091822A publication Critical patent/CN107091822A/en
Application granted granted Critical
Publication of CN107091822B publication Critical patent/CN107091822B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N2021/634Photochromic material analysis

Landscapes

  • Health & Medical Sciences (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)

Abstract

The invention discloses a kind of devices of double light source activation luminescence generated by light detection semiconductor defects, comprising: first laser light source, second laser light source, semiconductor samples, the first lens, the first light splitting piece, the second light splitting piece, reflecting mirror, the first optical filter, the second optical filter, the second lens, monochromator, photodetector and computer;The luminescence generated by light of first laser light source activation semiconductor samples;Second laser light source is saturated the deep energy level defect electronic state in semiconductor samples material;Photodetector finally detects optical signal at monochromator light-emitting window, obtain the photoluminescence spectra that double light source activation samples obtain, the luminescent spectrum that comparison single light source and two-source illumination sample obtain confirms whether the deep energy level defect in semiconductor samples is effective Carrier recombination center.The invention also discloses a kind of detection methods of double light source activation luminescence generated by light detection semiconductor defects.

Description

The device and its detection method of double light source activation luminescence generated by light detection semiconductor defects
Technical field
The invention belongs to defects from semiconductor materials detection techniques, are related to a kind of double light source activation luminescence generated by light detection semiconductors The device and its detection method of defect.
Background technique
Luminescence generated by light is detected the defects of semiconductor material and is mainly swashed using the exciting light that light energy is greater than forbidden bandwidth Additional carrier is issued, by measuring the carrier radiation transistion spectrum of interband, passes through (such as light intensity, temperature under different condition Deng) spectrum change and qualitatively to study the information such as level of energy, distribution of defect, however can only to detect shallow energy level scarce for the method Sunken characteristic can not obtain the information of deep energy level defect.
In order to detect the characteristic of shallow energy level defect and deep energy level defect simultaneously, the invention proposes a kind of double light sources to swash The photoluminescence that shines detects the device and its detection method of semiconductor defect.
Summary of the invention
The invention discloses a kind of devices of double light source activation luminescence generated by light detection semiconductor defects, comprising: first laser Light source, second laser light source, semiconductor samples, spectroscope, reflecting mirror, convex lens, optical filter, monochromator, photodetector and Computer;The first laser light source is radiated at the sample surfaces of detection by light splitting piece and lens focus, partly leads for exciting Body sample generates luminescence generated by light;The second laser light source is radiated at the sample surfaces of detection by light splitting piece and lens focus, For making a certain deep energy level defect electronic state saturation in semiconductor samples;Luminescence generated by light signal by the lens collect after by It is collected again by lens to the monochromator entrance slit after the light splitting piece, reflecting mirror, optical filter;The photodetector is used Go out light emission slit optical signal in detection monochromator;The output of the photodetector is connect with the computer, obtains double light sources The photoluminescence spectra that excitation sample obtains, comparison is only with the first laser light source irradiating sample and simultaneously with the short wavelength The luminescent spectrum obtained with second laser light source irradiating sample, to confirm whether the deep energy level defect in semiconductor samples is effective Carrier recombination center.
In the device of double light source activation luminescence generated by light detection semiconductor defects proposed by the present invention, the first laser The wavelength of light source is in as within the scope of 300 nm-2000 nm, and spectrum halfwidth range is 0.01 nm-10 nm, and photon energy Greater than the forbidden bandwidth of the semiconductor samples.
In the device of double light source activation luminescence generated by light detection semiconductor defects proposed by the present invention, the second laser The wavelength of light source is in as within the scope of 300 nm-2000 nm, and spectrum halfwidth range is 0.01 nm-10 nm, and photon energy Adjustable, any deep energy level defect energy level in photon energy and the semiconductor samples is identical as the energy bite of valence band.
In the device of double light source activation luminescence generated by light detection semiconductor defects proposed by the present invention, the first laser Light source and second laser light source can be two kinds of identical laser light source instruments but be not limited to it is identical, but issue when in use swash Light is divided into wavelength length and photon energy height.
In the device of double light source activation luminescence generated by light detection semiconductor defects proposed by the present invention, described first filters Piece only filters the excitation light source spectrum of the first laser light source, and filter types are limited light optical filter, at filter wavelength range Within the scope of for 300 nm-2000 nm, optical filtering spectral half-width is 0.01 nm-10 nm.
In the device of double light source activation luminescence generated by light detection semiconductor defects proposed by the present invention, described second filters Piece can only filter the excitation light source spectrum of the second laser light source, and filter types are limited light optical filter, filter wavelength model It encloses within the scope of 300 nm-2000 nm, optical filtering spectral half-width is 0.01 nm-10 nm.
In the device of double light source activation luminescence generated by light detection semiconductor defects proposed by the present invention, the photodetection Device spectral response range covers the photoluminescence spectra range of the semiconductor samples.
In the device of double light source activation luminescence generated by light detection semiconductor defects proposed by the present invention, the computer packet Include data acquisition and Data Management Analysis software.
The invention also provides a kind of double light source activation luminescence generated by lights using the detection device to detect semiconductor defect Detection method, include the following steps:
Step 1: focusing to semiconductor samples surface by light splitting piece to lens using the first laser light source, Luminescence generated by light for vitalizing semiconductor sample;
Step 2: using the photodetector detect monochromator exit slit outgoing only by the first laser Light source irradiates photoluminescence spectra caused by the semiconductor samples;
Step 3: the semiconductor sample is focused to by the light splitting piece to lens using the second laser light source Product surface, it is identical as the position on first laser light-resource fousing described in step 1 to the semiconductor samples surface, it is described for making Deep energy level defect electronic state saturation in semiconductor samples material;
Step 4: using the photodetector detect monochromator exit slit outgoing by the first laser light Source and the second laser light source irradiate photoluminescence spectra caused by the semiconductor samples simultaneously;
Step 5: the photoluminescence spectra intensity of comparison step 2 and step 4 measurement, if the spectrum of step 4 measurement Intensity is greater than the spectral intensity of step 2 measurement, illustrates corresponding with the second laser light source light energy in the semiconductor samples Deep energy level defect be effective Carrier recombination center, if if step 4 measurement spectral intensity be equal to step 2 measurement Spectral intensity, illustrate that deep energy level defect corresponding with the second laser light source light energy is not in the semiconductor samples It is effective Carrier recombination center.
Detection method mainly shines using double light source laser excitation semiconductor samples generation light are, wherein a laser Light source light energy be greater than semiconductor forbidden bandwidth, for excite sample generate luminescence generated by light, in addition a laser light source light energy with Level of energy (with the energy bite of valence band) of a certain deep energy level defect is corresponding in semiconductor forbidden bandwidth, for being saturated deep energy level The electronic state of defect, the comparison of electronic state saturation and luminescence generated by light spectral intensity when unsaturation by comparing deep energy level defect, It detects or judges whether deep energy level defect is effective Carrier recombination center, for the electroluminescent of current common monochromatic light source excitation The method that luminous measurement can only detect shallow defect level in semiconductor is a supplement well.
Detailed description of the invention
Fig. 1 is the structure composition for the Installation practice that double light source activation luminescence generated by lights of the present invention detect semiconductor defect Schematic diagram.
Fig. 2 is that double light source activation luminescence generated by lights of the present invention detect deep level in semiconductor defect schematic diagram.
When Fig. 3 is photoluminescence spectra caused by single light source laser excitation copper indium gallium selenide (CIGS) material of measurement with double light Source laser excites photoluminescence spectra caused by CIGS simultaneously.
Specific embodiment
In conjunction with following specific embodiments and attached drawing, the present invention is described in further detail.Implement process of the invention, Condition, experimental method etc. are among the general principles and common general knowledge in the art, this hair in addition to what is specifically mentioned below It is bright that there are no special restrictions to content.
Referring to Fig. 1, double light source activation luminescence generated by lights detection deep level in semiconductor defect detecting device of the invention includes: the One laser light source 1, second laser light source 2, semiconductor samples 3, the first lens 4, the first light splitting piece 5, the second light splitting piece 6, reflection Mirror 7, the first optical filter 8, the second optical filter 9, the second lens 10, monochromator 11, photodetector 12 and computer 13.First swashs Radiant 1, to focus to 3 surface of semiconductor samples, is used for vitalizing semiconductor sample by 5 to the first lens 4 of the first light splitting piece 3 luminescence generated by light;Only being irradiated partly by first laser light source 1 for 11 exit slit of monochromator outgoing is detected using photodetector 12 Photoluminescence spectra caused by conductor sample 3;Using second laser light source 2 by 6 to the first lens 4 of the second light splitting piece to poly- Coke is identical as the position that first laser light source 1 focuses to 3 surface of semiconductor samples to 3 surface of semiconductor samples, partly leads for making Deep energy level defect electronic state saturation in 3 material of body sample;11 exit slit of monochromator is detected using photodetector 12 to be emitted Photoluminescence spectra caused by semiconductor samples 3 is irradiated as first laser light source 1 and second laser light source 2 simultaneously;Comparison is only Caused photoluminescence spectra intensity is excited with first laser light source 1 and uses first laser light source 1 and second laser light source 2 simultaneously Photoluminescence spectral intensity caused by exciting, if photoluminescence spectra intensity caused by only being excited with first laser light source 1 is less than Photoluminescence spectral intensity, illustrates in semiconductor samples 3 caused by being excited simultaneously with first laser light source 1 and second laser light source 2 Deep energy level defect corresponding with 2 light energy of second laser light source is that effective Carrier recombination center illustrates if be equal to Deep energy level defect corresponding with 2 light energy of second laser light source is not effective Carrier recombination center in semiconductor samples 3.
The wavelength of first laser light source 1 is in as within the scope of 300 nm-2000 nm, spectrum halfwidth range is 0.01 Nm-10 nm, and photon energy is greater than the forbidden bandwidth of semiconductor samples 3.Common semiconductor Ge, Si, GaAs, CIGS, The forbidden bandwidth of GaN and diamond is respectively 0.66eV, 1.12 eV, 1.42 eV, 1.01 ~ 1.68 eV, 3.44 at room temperature EV and 5.47 eV.
The wavelength of second laser light source 2 is in as within the scope of 300 nm-2000 nm, spectrum halfwidth range is 0.01 Nm-10 nm, and photon energy is adjustable, photon energy are less than in the forbidden bandwidth of semiconductor samples 3, and photon energy with partly lead A certain deep energy level defect energy level in body sample 3 is close with the energy bite of valence band.
During implementing technical solution of the present invention, the optical maser wavelength of first laser light source is less than swashing for second laser light source Optical wavelength.
First optical filter 8 can only filter the excitation light source spectrum of first laser light source 1.Filter types be limited light optical filtering Piece, filter wavelength range are in as within the scope of 300 nm-2000 nm, optical filtering spectral half-width is 0.01 nm-10 nm.
Second optical filter 9 can only filter the excitation light source spectrum of second laser light source 2.Filter types be limited light optical filtering Piece, filter wavelength range are in as within the scope of 300 nm-2000 nm, optical filtering spectral half-width is 0.01 nm-10 nm.
11 grating of monochromator covers the photoluminescence spectra range of the semiconductor samples 3, is in the nm of 200 nm ~ 3000 In range.
12 spectral response range of photodetector covers the photoluminescence spectra range of the semiconductor samples 3.
Computer 13 mainly includes that data acquire and analyze software.For acquiring the spectrum of the measurement of photodetector 12.
The measurement result of 0.8 eV deep energy level defect in CIGS is given below.
CIGS is illustrated into detection device of the present invention and testing principle by Fig. 1 sample position, Fig. 1 ~ 2 are placed in.Utilize wave The laser excitation CIGS sample of a length of 635 nm measures luminescence generated by light light at this time using monochromator 11 and photodetector 12 Spectrum, spectral intensity I1.Utilize the laser that wavelength is 635 nm and laser (corresponding deep energy level defect energy that wavelength is 1550 nm Grade is 0.8 eV, and 0.8 eV is the energy bite of defect level position and top of valence band) CIGS sample same position is irradiated simultaneously, benefit Photoluminescence spectra at this time, spectral intensity I are measured with monochromator 11 and photodetector 122, as shown in figure 3, I2> I1, The deep energy level defect for illustrating 0.8 eV is effective Carrier recombination center.
Protection content of the invention is not limited to above embodiments.Without departing from the spirit and scope of the invention, originally Field technical staff it is conceivable that variation and advantage be all included in the present invention, and with appended claims be protect Protect range.

Claims (7)

1. a kind of detection method of double light source activation luminescence generated by light detection semiconductor defects, which is characterized in that swashed using double light sources The photoluminescence that shines detects the device of semiconductor defect, includes the following steps:
Step 1: semiconductor is focused to by the first light splitting piece (5) to the first lens (4) using first laser light source (1) Sample (3) surface is used for the luminescence generated by light of vitalizing semiconductor sample (3);
Step 2: using photodetector (12) detection monochromator (11) exit slit outgoing only by the first laser light source (1) photoluminescence spectra caused by semiconductor samples (3) is irradiated;
Step 3: semiconductor is focused to by the second light splitting piece (6) to the first lens (4) using second laser light source (2) Sample (3) surface, it is identical as the position that first laser light source (1) described in step 1 focuses to semiconductor samples (3) surface, it is used for It is saturated the deep energy level defect electronic state in semiconductor samples (3) material;
Step 4: using photodetector (12) detection monochromator (11) exit slit outgoing by the first laser light Source (1) and the second laser light source (2) irradiate photoluminescence spectra caused by the semiconductor samples (3) simultaneously;
Step 5: the photoluminescence spectra intensity of comparison step 2 and step 4 measurement, if the spectral intensity of step 4 measurement Greater than the spectral intensity of step 2 measurement, illustrate in the semiconductor samples (3) with second laser light source (2) light energy pair The deep energy level defect answered is effective Carrier recombination center, if the spectral intensity of step 4 measurement is equal to step 2 measurement Spectral intensity illustrates that deep energy level defect corresponding with second laser light source (2) light energy is not in the semiconductor samples (3) It is effective Carrier recombination center;
The device of double light source activation luminescence generated by light detection semiconductor defects, comprising: first laser light source (1), second laser Light source (2), semiconductor samples (3), the first lens (4), the first light splitting piece (5), the second light splitting piece (6), reflecting mirror (7), first Optical filter (8), the second optical filter (9), the second lens (10), monochromator (11), photodetector (12) and computer (13);Institute First laser light source (1) is stated by the first light splitting piece (5) to first lens (4) to focus to the semiconductor samples (3) surface is used for the luminescence generated by light of vitalizing semiconductor sample (3);
The second laser light source (2) focuses to the semiconductor by the second light splitting piece (6) to first lens (4) Sample (3) surface, for being saturated the deep energy level defect electronic state in the semiconductor samples (3) material;
Before first optical filter (8) is placed in monochromator (11) entrance slit, for filtering the exciting light of first laser light source (1) Source spectrum;
Before second optical filter (9) is placed in monochromator (11) entrance slit, for filtering the exciting light of second laser light source (2) Source spectrum;
Second lens (10) are in the luminescence generated by light signal to the entrance slit of monochromator (11) of focusing collector;
Spectrum of the monochromator (11) for the luminescence generated by light signal of scanning wavelength scale collection;
The photodetector (12) is for detecting the photoluminescence spectra that monochromator (11) is emitted from exit slit;
The computer (13) is connected with the output of photodetector (12), reads photoluminescence spectra.
2. the detection method of double light source activation luminescence generated by light detection semiconductor defects as described in claim 1, which is characterized in that The wavelength of the first laser light source (1) is in as within the scope of 300 nm-2000 nm, spectrum halfwidth range is 0.01 nm- 10 nm, and photon energy is greater than the forbidden bandwidth of the semiconductor samples (3).
3. the detection method of double light source activation luminescence generated by light detection semiconductor defects as described in claim 1, which is characterized in that The wavelength of the second laser light source (2) is in as within the scope of 300 nm-2000 nm, spectrum halfwidth range is 0.01 nm- 10 nm, and photon energy is adjustable, any deep energy level defect energy level and valence band in photon energy and the semiconductor samples (3) Energy bite it is identical;The optical maser wavelength and photon energy of first laser light source (1) output are less than the second laser light Source (2).
4. the detection method of double light source activation luminescence generated by light detection semiconductor defects as described in claim 1, which is characterized in that First optical filter (8) only filters the excitation light source spectrum of the first laser light source (1), and filter wavelength range, which is in, is Within the scope of 300 nm-2000 nm, optical filtering spectral half-width is 0.01 nm-10 nm.
5. the detection method of double light source activation luminescence generated by light detection semiconductor defects as described in claim 1, which is characterized in that Second optical filter (9) can only filter the excitation light source spectrum of the second laser light source (2), and filter wavelength range is in For within the scope of 300 nm-2000 nm, optical filtering spectral half-width is 0.01 nm-10 nm.
6. the detection method of double light source activation luminescence generated by light detection semiconductor defects as described in claim 1, which is characterized in that Monochromator (11) grating covers the photoluminescence spectra range of the semiconductor samples (3).
7. the detection method of double light source activation luminescence generated by light detection semiconductor defects as described in claim 1, which is characterized in that Photodetector (12) spectral response range covers the photoluminescence spectra range of the semiconductor samples (3).
CN201710150530.8A 2017-03-14 2017-03-14 The device and its detection method of double light source activation luminescence generated by light detection semiconductor defects Active CN107091822B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710150530.8A CN107091822B (en) 2017-03-14 2017-03-14 The device and its detection method of double light source activation luminescence generated by light detection semiconductor defects

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201710150530.8A CN107091822B (en) 2017-03-14 2017-03-14 The device and its detection method of double light source activation luminescence generated by light detection semiconductor defects

Publications (2)

Publication Number Publication Date
CN107091822A CN107091822A (en) 2017-08-25
CN107091822B true CN107091822B (en) 2019-09-10

Family

ID=59646246

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201710150530.8A Active CN107091822B (en) 2017-03-14 2017-03-14 The device and its detection method of double light source activation luminescence generated by light detection semiconductor defects

Country Status (1)

Country Link
CN (1) CN107091822B (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108196178B (en) * 2017-12-28 2020-02-14 电子科技大学 Measuring device for surface trap energy level distribution and photoconductive analysis method
CN109387495B (en) * 2018-10-09 2021-10-12 东北大学秦皇岛分校 Double-light-source photocatalytic reaction device
CN109187349A (en) * 2018-10-24 2019-01-11 中国科学院新疆理化技术研究所 A kind of experimental method improving low-temperature photoluminescence measuring accuracy
CN109238969A (en) * 2018-10-24 2019-01-18 中国科学院新疆理化技术研究所 A kind of low-temperature photoluminescence rapidly and efficiently test method
CN111337458A (en) * 2020-03-30 2020-06-26 创能动力科技有限公司 Defect detection method and system for semiconductor layer
CN112180227A (en) * 2020-09-25 2021-01-05 浙江大学 Non-contact type silicon carbide power device junction temperature online detection system and detection method
CN113155843A (en) * 2021-03-15 2021-07-23 浙江大学 Defect detection device and method for obtaining luminescence signal
CN113503840B (en) * 2021-06-24 2022-09-09 北京通美晶体技术股份有限公司 Method and device for detecting material surface fog
JP7467816B2 (en) * 2021-06-24 2024-04-16 ベイジン トンメイ クリスタル テクノロジー カンパニー リミテッド Method and setup for detecting surface haze of a material
CN113984787B (en) * 2021-10-25 2023-06-09 江苏华兴激光科技有限公司 Semiconductor defect distribution imaging detection device and detection method
CN113970559A (en) * 2021-10-25 2022-01-25 江苏华兴激光科技有限公司 Semiconductor deep energy level defect detection device and detection method
CN113984727A (en) * 2021-10-25 2022-01-28 江苏华兴激光科技有限公司 Detection device and detection method for influence of semiconductor defects on fluorescence lifetime
CN114527143A (en) * 2022-04-22 2022-05-24 浙江大学杭州国际科创中心 Nondestructive testing semiconductor defect evolution method, system and device

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0563863A1 (en) * 1992-03-30 1993-10-06 MITSUI MININGS & MELTING CO., LTD. Method and apparatus for measuring photoluminescence in crystal
JPH08163034A (en) * 1994-12-12 1996-06-21 Sony Corp Optical communication device
WO1998011425A1 (en) * 1996-09-10 1998-03-19 Bio-Rad Micromeasurements Limited Apparatus and method for detecting micro defects in semi-conductors
CN1479944A (en) * 2000-10-06 2004-03-03 Aotiӫ�����޹�˾ Method to detect surface metal contamination
CN101949845A (en) * 2010-08-20 2011-01-19 浙江大学 Miniaturized low-cost photoluminescence scanning measurement device
CN202710474U (en) * 2012-04-18 2013-01-30 贵州大学 Compound detector for luminescent properties of luminescent materials
CN103080731A (en) * 2010-07-30 2013-05-01 第一太阳能有限公司 Photoluminescence measurement tool and associated method
CN104569779A (en) * 2005-10-11 2015-04-29 Bt成像股份有限公司 Method and system for inspecting indirect bandgap semiconductor structure
CN104641224A (en) * 2012-08-02 2015-05-20 国家科学研究中心 Method for analysing the crystal structure of a polycrystalline semiconductor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4988223B2 (en) * 2005-06-22 2012-08-01 株式会社日立ハイテクノロジーズ Defect inspection apparatus and method

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0563863A1 (en) * 1992-03-30 1993-10-06 MITSUI MININGS & MELTING CO., LTD. Method and apparatus for measuring photoluminescence in crystal
JPH08163034A (en) * 1994-12-12 1996-06-21 Sony Corp Optical communication device
WO1998011425A1 (en) * 1996-09-10 1998-03-19 Bio-Rad Micromeasurements Limited Apparatus and method for detecting micro defects in semi-conductors
CN1479944A (en) * 2000-10-06 2004-03-03 Aotiӫ�����޹�˾ Method to detect surface metal contamination
CN104569779A (en) * 2005-10-11 2015-04-29 Bt成像股份有限公司 Method and system for inspecting indirect bandgap semiconductor structure
CN103080731A (en) * 2010-07-30 2013-05-01 第一太阳能有限公司 Photoluminescence measurement tool and associated method
CN101949845A (en) * 2010-08-20 2011-01-19 浙江大学 Miniaturized low-cost photoluminescence scanning measurement device
CN202710474U (en) * 2012-04-18 2013-01-30 贵州大学 Compound detector for luminescent properties of luminescent materials
CN104641224A (en) * 2012-08-02 2015-05-20 国家科学研究中心 Method for analysing the crystal structure of a polycrystalline semiconductor

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
Ⅲ-Ⅴ族化合物半导体中的深能级杂质缺陷;秦国刚等;《发光与显示》;19830930(第3期);1-17页
Deep level defect luminescence in cadmium selenide nano-crystals films;V. Babentsov et al.;《Journal of Crystal Growth》;20050510;第280卷;502-508页
Excitonic emissions and above-band-gap luminescence in the single-crystal perovskite semiconductors CsPbBr3 and CsPbCl3;M. Sebastian et al.;《PHYSICAL REVIEW B》;20151229;第92卷;235210-1至235210-9页
半导体光催化材料光致发光光谱的研究;石建英;《中国博士学位论文全文数据库 工程科技Ⅰ辑》;20070815(第02期);B014-106页
半导体材料的光致发光;吕翔等;《红外》;20011231(第3期);13-16页

Also Published As

Publication number Publication date
CN107091822A (en) 2017-08-25

Similar Documents

Publication Publication Date Title
CN107091822B (en) The device and its detection method of double light source activation luminescence generated by light detection semiconductor defects
JP7160496B2 (en) System and method for specimen defect detection and photoluminescence measurement
EP1946079B1 (en) Method and system for inspecting indirect bandgap semiconductor structure
CN102144284B (en) For the method and apparatus of defects detection
CN110441272A (en) Use the method and apparatus of luminescence generated by light imaging tests light-emitting semiconductor device
TW201315990A (en) Solar metrology methods and apparatus
CN1575411A (en) A spectrometer incorporating signal matched filtering
JPH10300671A (en) Equipment for measuring micro particle
KR20130138214A (en) Defect inspection and photoluminescence measurement system
Parfenov et al. Measurement of the luminescence decay times of PbS quantum dots in the near-IR spectral range
CN108051413A (en) A kind of light activated photoluminescence spectra measuring system of pulse
CN108318459A (en) Pulsed Laser induces the measuring device and measuring method of photoluminescence spectrum
JP2525894B2 (en) Fluorescence characteristic inspection device for semiconductor samples
CN206930368U (en) A kind of second order correlation measuring system of wide bandgap semiconductor quantum dot fluorescence
CN206146837U (en) A optics and detecting system for multichannel atomic fluorescence spectrophotometer
JP5889212B2 (en) A method for non-contact determination of the properties of light converters
RU2578051C1 (en) Method of determining interlayer electron relaxation time in semiconductor quantum dots based on first type heterojunction
CN107063481A (en) A kind of second order correlation measuring system of wide bandgap semiconductor quantum dot fluorescence
CN113984727A (en) Detection device and detection method for influence of semiconductor defects on fluorescence lifetime
TW201932824A (en) Light measurement device and light measurement method
De Biasio et al. Detection of snail tracks on photovoltaic modules using a combination of Raman and fluorescence spectroscopy
KR100864198B1 (en) Semiconductor beam analytical module device and analyticla method
Krogmeier et al. Data analysis considerations in probing single quantum dot fluorescence intermittency
Zung et al. Recent Developments And Applications Of Multidimensional Fluorescence Spectroscopy
Vanek et al. Possibilities of usage LBIC method for characterisation of solar cells

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CP02 Change in the address of a patent holder

Address after: 200241 No. 500, Dongchuan Road, Shanghai, Minhang District

Patentee after: EAST CHINA NORMAL University

Address before: 200062 No. 3663, Putuo District, Shanghai, Zhongshan North Road

Patentee before: EAST CHINA NORMAL University

CP02 Change in the address of a patent holder