CN107091822B - The device and its detection method of double light source activation luminescence generated by light detection semiconductor defects - Google Patents
The device and its detection method of double light source activation luminescence generated by light detection semiconductor defects Download PDFInfo
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Abstract
The invention discloses a kind of devices of double light source activation luminescence generated by light detection semiconductor defects, comprising: first laser light source, second laser light source, semiconductor samples, the first lens, the first light splitting piece, the second light splitting piece, reflecting mirror, the first optical filter, the second optical filter, the second lens, monochromator, photodetector and computer；The luminescence generated by light of first laser light source activation semiconductor samples；Second laser light source is saturated the deep energy level defect electronic state in semiconductor samples material；Photodetector finally detects optical signal at monochromator light-emitting window, obtain the photoluminescence spectra that double light source activation samples obtain, the luminescent spectrum that comparison single light source and two-source illumination sample obtain confirms whether the deep energy level defect in semiconductor samples is effective Carrier recombination center.The invention also discloses a kind of detection methods of double light source activation luminescence generated by light detection semiconductor defects.
Description
Technical field
The invention belongs to defects from semiconductor materials detection techniques, are related to a kind of double light source activation luminescence generated by light detection semiconductors
The device and its detection method of defect.
Background technique
Luminescence generated by light is detected the defects of semiconductor material and is mainly swashed using the exciting light that light energy is greater than forbidden bandwidth
Additional carrier is issued, by measuring the carrier radiation transistion spectrum of interband, passes through (such as light intensity, temperature under different condition
Deng) spectrum change and qualitatively to study the information such as level of energy, distribution of defect, however can only to detect shallow energy level scarce for the method
Sunken characteristic can not obtain the information of deep energy level defect.
In order to detect the characteristic of shallow energy level defect and deep energy level defect simultaneously, the invention proposes a kind of double light sources to swash
The photoluminescence that shines detects the device and its detection method of semiconductor defect.
Summary of the invention
The invention discloses a kind of devices of double light source activation luminescence generated by light detection semiconductor defects, comprising: first laser
Light source, second laser light source, semiconductor samples, spectroscope, reflecting mirror, convex lens, optical filter, monochromator, photodetector and
Computer；The first laser light source is radiated at the sample surfaces of detection by light splitting piece and lens focus, partly leads for exciting
Body sample generates luminescence generated by light；The second laser light source is radiated at the sample surfaces of detection by light splitting piece and lens focus,
For making a certain deep energy level defect electronic state saturation in semiconductor samples；Luminescence generated by light signal by the lens collect after by
It is collected again by lens to the monochromator entrance slit after the light splitting piece, reflecting mirror, optical filter；The photodetector is used
Go out light emission slit optical signal in detection monochromator；The output of the photodetector is connect with the computer, obtains double light sources
The photoluminescence spectra that excitation sample obtains, comparison is only with the first laser light source irradiating sample and simultaneously with the short wavelength
The luminescent spectrum obtained with second laser light source irradiating sample, to confirm whether the deep energy level defect in semiconductor samples is effective
Carrier recombination center.
In the device of double light source activation luminescence generated by light detection semiconductor defects proposed by the present invention, the first laser
The wavelength of light source is in as within the scope of 300 nm-2000 nm, and spectrum halfwidth range is 0.01 nm-10 nm, and photon energy
Greater than the forbidden bandwidth of the semiconductor samples.
In the device of double light source activation luminescence generated by light detection semiconductor defects proposed by the present invention, the second laser
The wavelength of light source is in as within the scope of 300 nm-2000 nm, and spectrum halfwidth range is 0.01 nm-10 nm, and photon energy
Adjustable, any deep energy level defect energy level in photon energy and the semiconductor samples is identical as the energy bite of valence band.
In the device of double light source activation luminescence generated by light detection semiconductor defects proposed by the present invention, the first laser
Light source and second laser light source can be two kinds of identical laser light source instruments but be not limited to it is identical, but issue when in use swash
Light is divided into wavelength length and photon energy height.
In the device of double light source activation luminescence generated by light detection semiconductor defects proposed by the present invention, described first filters
Piece only filters the excitation light source spectrum of the first laser light source, and filter types are limited light optical filter, at filter wavelength range
Within the scope of for 300 nm-2000 nm, optical filtering spectral half-width is 0.01 nm-10 nm.
In the device of double light source activation luminescence generated by light detection semiconductor defects proposed by the present invention, described second filters
Piece can only filter the excitation light source spectrum of the second laser light source, and filter types are limited light optical filter, filter wavelength model
It encloses within the scope of 300 nm-2000 nm, optical filtering spectral half-width is 0.01 nm-10 nm.
In the device of double light source activation luminescence generated by light detection semiconductor defects proposed by the present invention, the photodetection
Device spectral response range covers the photoluminescence spectra range of the semiconductor samples.
In the device of double light source activation luminescence generated by light detection semiconductor defects proposed by the present invention, the computer packet
Include data acquisition and Data Management Analysis software.
The invention also provides a kind of double light source activation luminescence generated by lights using the detection device to detect semiconductor defect
Detection method, include the following steps:
Step 1: focusing to semiconductor samples surface by light splitting piece to lens using the first laser light source,
Luminescence generated by light for vitalizing semiconductor sample；
Step 2: using the photodetector detect monochromator exit slit outgoing only by the first laser
Light source irradiates photoluminescence spectra caused by the semiconductor samples；
Step 3: the semiconductor sample is focused to by the light splitting piece to lens using the second laser light source
Product surface, it is identical as the position on first laser light-resource fousing described in step 1 to the semiconductor samples surface, it is described for making
Deep energy level defect electronic state saturation in semiconductor samples material；
Step 4: using the photodetector detect monochromator exit slit outgoing by the first laser light
Source and the second laser light source irradiate photoluminescence spectra caused by the semiconductor samples simultaneously；
Step 5: the photoluminescence spectra intensity of comparison step 2 and step 4 measurement, if the spectrum of step 4 measurement
Intensity is greater than the spectral intensity of step 2 measurement, illustrates corresponding with the second laser light source light energy in the semiconductor samples
Deep energy level defect be effective Carrier recombination center, if if step 4 measurement spectral intensity be equal to step 2 measurement
Spectral intensity, illustrate that deep energy level defect corresponding with the second laser light source light energy is not in the semiconductor samples
It is effective Carrier recombination center.
Detection method mainly shines using double light source laser excitation semiconductor samples generation light are, wherein a laser
Light source light energy be greater than semiconductor forbidden bandwidth, for excite sample generate luminescence generated by light, in addition a laser light source light energy with
Level of energy (with the energy bite of valence band) of a certain deep energy level defect is corresponding in semiconductor forbidden bandwidth, for being saturated deep energy level
The electronic state of defect, the comparison of electronic state saturation and luminescence generated by light spectral intensity when unsaturation by comparing deep energy level defect,
It detects or judges whether deep energy level defect is effective Carrier recombination center, for the electroluminescent of current common monochromatic light source excitation
The method that luminous measurement can only detect shallow defect level in semiconductor is a supplement well.
Detailed description of the invention
Fig. 1 is the structure composition for the Installation practice that double light source activation luminescence generated by lights of the present invention detect semiconductor defect
Schematic diagram.
Fig. 2 is that double light source activation luminescence generated by lights of the present invention detect deep level in semiconductor defect schematic diagram.
When Fig. 3 is photoluminescence spectra caused by single light source laser excitation copper indium gallium selenide (CIGS) material of measurement with double light
Source laser excites photoluminescence spectra caused by CIGS simultaneously.
Specific embodiment
In conjunction with following specific embodiments and attached drawing, the present invention is described in further detail.Implement process of the invention,
Condition, experimental method etc. are among the general principles and common general knowledge in the art, this hair in addition to what is specifically mentioned below
It is bright that there are no special restrictions to content.
Referring to Fig. 1, double light source activation luminescence generated by lights detection deep level in semiconductor defect detecting device of the invention includes: the
One laser light source 1, second laser light source 2, semiconductor samples 3, the first lens 4, the first light splitting piece 5, the second light splitting piece 6, reflection
Mirror 7, the first optical filter 8, the second optical filter 9, the second lens 10, monochromator 11, photodetector 12 and computer 13.First swashs
Radiant 1, to focus to 3 surface of semiconductor samples, is used for vitalizing semiconductor sample by 5 to the first lens 4 of the first light splitting piece
3 luminescence generated by light；Only being irradiated partly by first laser light source 1 for 11 exit slit of monochromator outgoing is detected using photodetector 12
Photoluminescence spectra caused by conductor sample 3；Using second laser light source 2 by 6 to the first lens 4 of the second light splitting piece to poly-
Coke is identical as the position that first laser light source 1 focuses to 3 surface of semiconductor samples to 3 surface of semiconductor samples, partly leads for making
Deep energy level defect electronic state saturation in 3 material of body sample；11 exit slit of monochromator is detected using photodetector 12 to be emitted
Photoluminescence spectra caused by semiconductor samples 3 is irradiated as first laser light source 1 and second laser light source 2 simultaneously；Comparison is only
Caused photoluminescence spectra intensity is excited with first laser light source 1 and uses first laser light source 1 and second laser light source 2 simultaneously
Photoluminescence spectral intensity caused by exciting, if photoluminescence spectra intensity caused by only being excited with first laser light source 1 is less than
Photoluminescence spectral intensity, illustrates in semiconductor samples 3 caused by being excited simultaneously with first laser light source 1 and second laser light source 2
Deep energy level defect corresponding with 2 light energy of second laser light source is that effective Carrier recombination center illustrates if be equal to
Deep energy level defect corresponding with 2 light energy of second laser light source is not effective Carrier recombination center in semiconductor samples 3.
The wavelength of first laser light source 1 is in as within the scope of 300 nm-2000 nm, spectrum halfwidth range is 0.01
Nm-10 nm, and photon energy is greater than the forbidden bandwidth of semiconductor samples 3.Common semiconductor Ge, Si, GaAs, CIGS,
The forbidden bandwidth of GaN and diamond is respectively 0.66eV, 1.12 eV, 1.42 eV, 1.01 ~ 1.68 eV, 3.44 at room temperature
EV and 5.47 eV.
The wavelength of second laser light source 2 is in as within the scope of 300 nm-2000 nm, spectrum halfwidth range is 0.01
Nm-10 nm, and photon energy is adjustable, photon energy are less than in the forbidden bandwidth of semiconductor samples 3, and photon energy with partly lead
A certain deep energy level defect energy level in body sample 3 is close with the energy bite of valence band.
During implementing technical solution of the present invention, the optical maser wavelength of first laser light source is less than swashing for second laser light source
Optical wavelength.
First optical filter 8 can only filter the excitation light source spectrum of first laser light source 1.Filter types be limited light optical filtering
Piece, filter wavelength range are in as within the scope of 300 nm-2000 nm, optical filtering spectral half-width is 0.01 nm-10 nm.
Second optical filter 9 can only filter the excitation light source spectrum of second laser light source 2.Filter types be limited light optical filtering
Piece, filter wavelength range are in as within the scope of 300 nm-2000 nm, optical filtering spectral half-width is 0.01 nm-10 nm.
11 grating of monochromator covers the photoluminescence spectra range of the semiconductor samples 3, is in the nm of 200 nm ~ 3000
In range.
12 spectral response range of photodetector covers the photoluminescence spectra range of the semiconductor samples 3.
Computer 13 mainly includes that data acquire and analyze software.For acquiring the spectrum of the measurement of photodetector 12.
The measurement result of 0.8 eV deep energy level defect in CIGS is given below.
CIGS is illustrated into detection device of the present invention and testing principle by Fig. 1 sample position, Fig. 1 ~ 2 are placed in.Utilize wave
The laser excitation CIGS sample of a length of 635 nm measures luminescence generated by light light at this time using monochromator 11 and photodetector 12
Spectrum, spectral intensity I1.Utilize the laser that wavelength is 635 nm and laser (corresponding deep energy level defect energy that wavelength is 1550 nm
Grade is 0.8 eV, and 0.8 eV is the energy bite of defect level position and top of valence band) CIGS sample same position is irradiated simultaneously, benefit
Photoluminescence spectra at this time, spectral intensity I are measured with monochromator 11 and photodetector 122, as shown in figure 3, I2> I1,
The deep energy level defect for illustrating 0.8 eV is effective Carrier recombination center.
Protection content of the invention is not limited to above embodiments.Without departing from the spirit and scope of the invention, originally
Field technical staff it is conceivable that variation and advantage be all included in the present invention, and with appended claims be protect
Protect range.
Claims (7)
1. a kind of detection method of double light source activation luminescence generated by light detection semiconductor defects, which is characterized in that swashed using double light sources
The photoluminescence that shines detects the device of semiconductor defect, includes the following steps:
Step 1: semiconductor is focused to by the first light splitting piece (5) to the first lens (4) using first laser light source (1)
Sample (3) surface is used for the luminescence generated by light of vitalizing semiconductor sample (3)；
Step 2: using photodetector (12) detection monochromator (11) exit slit outgoing only by the first laser light source
(1) photoluminescence spectra caused by semiconductor samples (3) is irradiated；
Step 3: semiconductor is focused to by the second light splitting piece (6) to the first lens (4) using second laser light source (2)
Sample (3) surface, it is identical as the position that first laser light source (1) described in step 1 focuses to semiconductor samples (3) surface, it is used for
It is saturated the deep energy level defect electronic state in semiconductor samples (3) material；
Step 4: using photodetector (12) detection monochromator (11) exit slit outgoing by the first laser light
Source (1) and the second laser light source (2) irradiate photoluminescence spectra caused by the semiconductor samples (3) simultaneously；
Step 5: the photoluminescence spectra intensity of comparison step 2 and step 4 measurement, if the spectral intensity of step 4 measurement
Greater than the spectral intensity of step 2 measurement, illustrate in the semiconductor samples (3) with second laser light source (2) light energy pair
The deep energy level defect answered is effective Carrier recombination center, if the spectral intensity of step 4 measurement is equal to step 2 measurement
Spectral intensity illustrates that deep energy level defect corresponding with second laser light source (2) light energy is not in the semiconductor samples (3)
It is effective Carrier recombination center；
The device of double light source activation luminescence generated by light detection semiconductor defects, comprising: first laser light source (1), second laser
Light source (2), semiconductor samples (3), the first lens (4), the first light splitting piece (5), the second light splitting piece (6), reflecting mirror (7), first
Optical filter (8), the second optical filter (9), the second lens (10), monochromator (11), photodetector (12) and computer (13)；Institute
First laser light source (1) is stated by the first light splitting piece (5) to first lens (4) to focus to the semiconductor samples
(3) surface is used for the luminescence generated by light of vitalizing semiconductor sample (3)；
The second laser light source (2) focuses to the semiconductor by the second light splitting piece (6) to first lens (4)
Sample (3) surface, for being saturated the deep energy level defect electronic state in the semiconductor samples (3) material；
Before first optical filter (8) is placed in monochromator (11) entrance slit, for filtering the exciting light of first laser light source (1)
Source spectrum；
Before second optical filter (9) is placed in monochromator (11) entrance slit, for filtering the exciting light of second laser light source (2)
Source spectrum；
Second lens (10) are in the luminescence generated by light signal to the entrance slit of monochromator (11) of focusing collector；
Spectrum of the monochromator (11) for the luminescence generated by light signal of scanning wavelength scale collection；
The photodetector (12) is for detecting the photoluminescence spectra that monochromator (11) is emitted from exit slit；
The computer (13) is connected with the output of photodetector (12), reads photoluminescence spectra.
2. the detection method of double light source activation luminescence generated by light detection semiconductor defects as described in claim 1, which is characterized in that
The wavelength of the first laser light source (1) is in as within the scope of 300 nm-2000 nm, spectrum halfwidth range is 0.01 nm-
10 nm, and photon energy is greater than the forbidden bandwidth of the semiconductor samples (3).
3. the detection method of double light source activation luminescence generated by light detection semiconductor defects as described in claim 1, which is characterized in that
The wavelength of the second laser light source (2) is in as within the scope of 300 nm-2000 nm, spectrum halfwidth range is 0.01 nm-
10 nm, and photon energy is adjustable, any deep energy level defect energy level and valence band in photon energy and the semiconductor samples (3)
Energy bite it is identical；The optical maser wavelength and photon energy of first laser light source (1) output are less than the second laser light
Source (2).
4. the detection method of double light source activation luminescence generated by light detection semiconductor defects as described in claim 1, which is characterized in that
First optical filter (8) only filters the excitation light source spectrum of the first laser light source (1), and filter wavelength range, which is in, is
Within the scope of 300 nm-2000 nm, optical filtering spectral half-width is 0.01 nm-10 nm.
5. the detection method of double light source activation luminescence generated by light detection semiconductor defects as described in claim 1, which is characterized in that
Second optical filter (9) can only filter the excitation light source spectrum of the second laser light source (2), and filter wavelength range is in
For within the scope of 300 nm-2000 nm, optical filtering spectral half-width is 0.01 nm-10 nm.
6. the detection method of double light source activation luminescence generated by light detection semiconductor defects as described in claim 1, which is characterized in that
Monochromator (11) grating covers the photoluminescence spectra range of the semiconductor samples (3).
7. the detection method of double light source activation luminescence generated by light detection semiconductor defects as described in claim 1, which is characterized in that
Photodetector (12) spectral response range covers the photoluminescence spectra range of the semiconductor samples (3).
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