CN113984787B - Semiconductor defect distribution imaging detection device and detection method - Google Patents
Semiconductor defect distribution imaging detection device and detection method Download PDFInfo
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- CN113984787B CN113984787B CN202111237891.9A CN202111237891A CN113984787B CN 113984787 B CN113984787 B CN 113984787B CN 202111237891 A CN202111237891 A CN 202111237891A CN 113984787 B CN113984787 B CN 113984787B
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
Abstract
The invention relates to a semiconductor defect distribution imaging detection device and a detection method, which are characterized in that: the detection device comprises a current and voltage source, a three-dimensional translation stage, a continuous laser light source, a convex lens, a beam splitter, an optical filter and a CCD camera; the current voltage source is used for applying forward voltage or forward current to the semiconductor photoelectric device sample so as to enable the surface of the semiconductor photoelectric device sample to emit an optical signal; the continuous laser light source is focused to the surface of the semiconductor photoelectric device sample after passing through the lens and the beam splitter in sequence, and is used for saturating the defect electronic state in the semiconductor photoelectric device sample; the three-dimensional translation stage is used for adjusting the position of the semiconductor photoelectric device sample, so that the continuous laser light source can completely scan the surface of the semiconductor photoelectric device sample; the optical signals of the semiconductor photoelectric device sample are projected onto a CCD camera after passing through a beam splitter and an optical filter in sequence. The invention can effectively detect the position distribution information of the deep energy level defect of the semiconductor photoelectric device.
Description
Technical Field
The invention belongs to the semiconductor material defect detection technology, and particularly relates to a semiconductor defect distribution imaging detection device and a detection method.
Background
Electroluminescent imaging is an effective means of characterizing semiconductor photovoltaic devices by measuring the electroluminescent imaging of the surface of the semiconductor photovoltaic device to enable easy detection of surface damage defects such as cracks, electrode damage, etc., such as for semiconductor solar cell devices. However, electroluminescence imaging cannot directly detect deep level carrier composite defects inside the material, that is, position information of the deep level carrier composite defects cannot be judged through electroluminescence imaging.
In order to judge the position distribution information of the deep energy level defects of the semiconductor photoelectric device by utilizing an electroluminescence imaging method, the invention provides a semiconductor defect distribution imaging detection device and a detection method.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a semiconductor defect distribution imaging detection device which can effectively detect the position distribution information of deep energy level defects of a semiconductor photoelectric device.
In order to solve the technical problems, the technical scheme of the invention is as follows: a semiconductor defect distribution imaging detection device is characterized in that: the device comprises a current and voltage source, a three-dimensional translation stage, a continuous laser light source, a convex lens, a beam splitter, an optical filter and a CCD camera; the current voltage source is used for applying forward voltage or forward current to the semiconductor photoelectric device sample so as to enable the surface of the semiconductor photoelectric device sample to emit an optical signal; the photon energy of the continuous laser light source is adjustable, and the photon energy is the same as the energy interval between any deep energy level defect and valence band in the semiconductor photoelectric device sample, and the continuous laser light source is focused to the surface of the semiconductor photoelectric device sample after sequentially passing through the lens and the beam splitter, so that the defect electron state in the semiconductor photoelectric device sample is saturated; the three-dimensional translation stage is used for adjusting the position of the semiconductor photoelectric device sample, so that the continuous laser light source can completely scan the surface of the semiconductor photoelectric device sample; and the optical signals of the semiconductor photoelectric device sample sequentially pass through the beam splitter and the optical filter and then are projected onto the CCD camera.
According to the technical scheme, the CCD camera imaging device further comprises a computer, wherein the computer is used for acquiring and processing imaging signals of the CCD camera.
According to the technical scheme, the three-dimensional translation stage is controlled by the stepping motor.
According to the technical scheme, the wavelength range of the continuous laser light source is 300nm-2000nm, and the half-width range of the spectrum is 0.01nm-10nm.
Compared with the prior art, the invention has the beneficial characteristics that: the semiconductor defect distribution imaging detection device is characterized in that a current voltage source is used for applying forward voltage or current to a semiconductor photoelectric device sample and is used for enabling the surface of the semiconductor photoelectric device sample to generate electroluminescent signals, and the optical signals are collected by a CCD camera after passing through a beam splitter and an optical filter; the continuous laser light source irradiates the surface of the detected sample through a convex lens and a beam splitter and is used for saturating electron states of a certain deep energy level defect in the semiconductor sample; the CCD camera is connected with the computer to obtain a surface luminescence distribution image of the sample, and compares a sample surface luminescence imaging distribution signal obtained by irradiating the sample by the continuous laser light source with a non-continuous laser light source to determine whether a carrier composite defect exists at a certain position point of the sample of the semiconductor photoelectric device, and the position of the sample irradiated by the continuous laser light source is changed through the three-dimensional translation table to obtain the distribution imaging of the semiconductor defect, so that the position distribution information of the deep energy level defect of the sample of the semiconductor photoelectric device can be effectively detected.
The invention also provides a detection method based on any one of the semiconductor defect distribution imaging detection devices, which is characterized in that: which comprises the following steps:
step a), applying forward voltage or current to a semiconductor photoelectric device sample by using a current-voltage source to enable the semiconductor photoelectric device sample to emit light signals, wherein a continuous laser light source does not emit light at the moment, and measuring luminescence imaging of the semiconductor photoelectric device sample by using a CCD camera;
step b), the continuous laser light source emits light, and the continuous laser light source is focused to a certain position point on the semiconductor photoelectric device sample after passing through a lens and a beam splitter in sequence, so that the defect electronic state of the semiconductor photoelectric device sample is saturated;
c), controlling the semiconductor photoelectric device sample to move in a plane by using a three-dimensional translation table, enabling the continuous laser light source to completely scan the surface of the semiconductor photoelectric device sample, and measuring the luminescence imaging of the semiconductor photoelectric device sample by using a CCD camera;
step d), comparing the measurement results of the step c) with the measurement results of the step a), respectively; if the optical signal intensity at a certain position point in the step c) is greater than the optical signal intensity in the step a), a carrier composite defect exists at the position point, and the defect corresponds to the optical energy of the continuous laser light source; if the optical signal intensity at a certain position point in step c) is equal to the optical signal intensity in step a), no carrier recombination defect exists at the position point.
Compared with the prior art, the invention has the beneficial characteristics that: the semiconductor defect distribution imaging detection method comprises the steps that a current voltage source is used for applying forward voltage or current to a semiconductor photoelectric device sample and is used for enabling the surface of the semiconductor photoelectric device sample to generate electroluminescent signals, and the optical signals are collected by a CCD camera after passing through a beam splitter and an optical filter; the continuous laser light source irradiates the surface of the detected sample through a convex lens and a beam splitter and is used for saturating electron states of a certain deep energy level defect in the semiconductor sample; the CCD camera is connected with the computer to obtain a surface luminescence distribution image of the sample, and compares a sample surface luminescence imaging distribution signal obtained by irradiating the sample by the continuous laser light source with a non-continuous laser light source to determine whether a carrier composite defect exists at a certain position point of the sample of the semiconductor photoelectric device, and the position of the sample irradiated by the continuous laser light source is changed through the three-dimensional translation table to obtain the distribution imaging of the semiconductor defect, so that the position distribution information of the deep energy level defect of the sample of the semiconductor photoelectric device can be effectively detected.
Drawings
FIG. 1 is a schematic structural diagram of a semiconductor defect distribution imaging detection apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a semiconductor defect distribution imaging detection apparatus according to an embodiment of the present invention;
wherein: 1-semiconductor photoelectric device sample, 2-current voltage source, 3-three-dimensional translation stage, 4-continuous laser light source, 5-convex lens, 6-beam splitter, 7-optical filter, 8-CCD camera, 9-computer.
Detailed Description
The invention will be described in further detail below with reference to the drawings by means of specific embodiments. The procedures, conditions, experimental methods, etc. for carrying out the present invention are common knowledge and common knowledge in the art, except for the following specific references, and the present invention is not particularly limited.
Referring to fig. 1 and 2, the semiconductor defect distribution imaging detection device of the embodiment of the invention comprises a current-voltage source 2, a three-dimensional translation stage 3, a continuous laser light source 4, a convex lens 5, a beam splitter 6, an optical filter 7 and a CCD camera 8. The current-voltage source 2 is used to apply a forward voltage or a forward current to the semiconductor optoelectronic device sample 1 so as to make the surface of the semiconductor optoelectronic device sample 1 emit an optical signal. The photon energy of the continuous laser light source 4 is adjustable, and the photon energy is the same as the energy interval of any deep energy level defect and valence band in the semiconductor photoelectric device sample 1, and the continuous laser light source 4 sequentially passes through the lens to the beam splitter 6 and then focuses on the surface of the semiconductor photoelectric device sample 1, so that the electron state of the defect in the semiconductor photoelectric device sample 1 is saturated. The three-dimensional translation stage 3 is used for adjusting the position of the semiconductor photoelectric device sample 1, so that the continuous laser light source 4 can completely scan the surface of the semiconductor photoelectric device sample 1. The optical signal of the semiconductor photoelectric device sample 1 is projected onto a CCD camera 8 after passing through a beam splitter 6 and an optical filter 7 in sequence. The filter 7 is a light limiting filter 7, and the filtered wavelength corresponds to the wavelength of the continuous laser light source 4 and is used for filtering out the spectrum of the continuous laser light source 4. The CCD camera 8 covers the luminescence spectrum range of the semiconductor photoelectric device sample 1 in response to the wavelength range, and is used for detecting surface luminescence imaging of the semiconductor photoelectric device sample 1.
Specifically, the detection device further comprises a computer 9, and the computer 9 is connected to the output of the CCD camera 8 for reading the imaging signal.
Preferably, the three-dimensional translation stage 3 is controlled by a stepper motor, the minimum movement precision being less than 0.1 μm.
Preferably, the wavelength range of the continuous laser light source 4 is 300nm-2000nm, the half-width range of the spectrum is 0.01nm-10nm, and the photon energy is adjustable, and the photon energy is the same as the energy interval between any defect energy level and valence band in the semiconductor photoelectric device sample 1.
According to the semiconductor defect distribution imaging detection device, a current voltage source 2 is used for applying forward voltage or current to a semiconductor photoelectric device sample 1 and is used for enabling the surface of the semiconductor photoelectric device sample 1 to generate electroluminescent signals, and the optical signals are collected by a CCD camera 8 after passing through a beam splitter 6 and an optical filter 7; the continuous laser light source 4 irradiates the surface of the detected sample through the convex lens 5 and the beam splitter 6 and is used for saturating electron states of a certain deep energy level defect in the semiconductor sample; the CCD camera 8 is connected with the computer 9 to obtain a surface luminescence distribution image of the sample, and compares a sample surface luminescence imaging distribution signal obtained by irradiating the sample by the continuous laser light source 4 with a sample surface luminescence imaging distribution signal obtained by irradiating the sample by the continuous laser light source 4 to determine whether a carrier composite defect exists at a certain position point of the semiconductor photoelectric device sample 1, and the position of the continuous laser light source 4 irradiated to the sample is changed by the three-dimensional translation table 3 to obtain the distribution imaging of the semiconductor defect, so that the position distribution information of the deep energy level defect of the semiconductor photoelectric device sample 1 can be effectively detected.
The detection method of the semiconductor defect distribution imaging detection device comprises the following steps:
step a), forward voltage or current is applied to the semiconductor photoelectric device sample 1 by using the current-voltage source 2, so that the semiconductor photoelectric device sample 1 emits light signals, at the moment, the continuous laser light source 4 does not emit light, and the CCD camera 8 is used for measuring the luminescence imaging of the semiconductor photoelectric device sample 1.
Step b), the continuous laser light source 4 emits light, and the continuous laser light source 4 sequentially passes through the lens and the beam splitter 6 and then is focused on the semiconductor photoelectric device sample 1, so that any defect electronic state at a certain position point of the semiconductor photoelectric device sample 1 is saturated.
Step c), the three-dimensional translation stage 3 is used for controlling the semiconductor photoelectric device sample 1 to move in the plane, the moving direction is the direction indicated by an arrow in fig. 1, the continuous laser light source 4 is used for carrying out complete scanning on the surface of the semiconductor photoelectric device sample 1, and the CCD camera 8 is used for measuring the luminescence imaging of the semiconductor photoelectric device sample 1.
Step d) comparing the measurement results of step c) with the measurement results of step a), respectively. If the semiconductor optoelectronic device sample 1 has a carrier recombination defect at a certain point and the defect corresponds to the light energy of the continuous laser light source 4, the light signal intensity at that point measured in step c) will be greater than the light signal intensity measured in step a). If the semiconductor optoelectronic device sample 1 does not have carrier recombination defects at a certain point, the optical signal intensity at that point measured in step c) will be equal to the optical signal intensity measured in step a). Subtracting the luminescence imaging measured in the step c) from the luminescence imaging measured in the step a), and obtaining the distribution imaging of the defects.
The semiconductor defect distribution imaging detection method provided by the embodiment of the invention can be used for effectively detecting the position distribution information of the deep energy level defects of the semiconductor photoelectric device. The method is a good supplement for the fact that the current electroluminescence imaging cannot directly obtain the semiconductor deep energy level defect distribution information.
The foregoing is a further detailed description of the present invention in connection with the specific embodiments, and it should not be construed that the specific embodiments of the present invention are limited to those described, but that several simple deductions or substitutions can be made by those skilled in the art to which the present invention pertains without departing from the spirit of the present invention, and all the embodiments should be considered as falling within the scope of the present invention.
Claims (4)
1. A semiconductor defect distribution imaging detection method, which uses a semiconductor defect distribution imaging detection device, is characterized in that: the semiconductor defect distribution imaging detection device comprises a current and voltage source, a three-dimensional translation stage, a continuous laser light source, a convex lens, a beam splitter, an optical filter and a CCD camera; the current voltage source is used for applying forward voltage or forward current to the semiconductor photoelectric device sample so as to enable the surface of the semiconductor photoelectric device sample to emit an optical signal; the photon energy of the continuous laser light source is adjustable, and the photon energy is the same as the energy interval between any deep energy level defect and valence band in the semiconductor photoelectric device sample, and the continuous laser light source is focused to the surface of the semiconductor photoelectric device sample after sequentially passing through the lens and the beam splitter, so that the defect electron state in the semiconductor photoelectric device sample is saturated; the three-dimensional translation stage is used for adjusting the position of the semiconductor photoelectric device sample, so that the continuous laser light source can completely scan the surface of the semiconductor photoelectric device sample; the optical signals of the semiconductor photoelectric device sample sequentially pass through the beam splitter and the optical filter and then are projected onto the CCD camera;
the method comprises the steps of a), applying forward voltage or current to a semiconductor photoelectric device sample by using a current-voltage source to enable the semiconductor photoelectric device sample to emit light signals, wherein a continuous laser light source does not emit light at the moment, and measuring luminescence imaging of the semiconductor photoelectric device sample by using a CCD camera;
step b), the continuous laser light source emits light, and the continuous laser light source is focused to a certain position point on the semiconductor photoelectric device sample after passing through a lens and a beam splitter in sequence, so that the defect electronic state of the semiconductor photoelectric device sample is saturated;
c), controlling the semiconductor photoelectric device sample to move in a plane by using a three-dimensional translation table, enabling the continuous laser light source to completely scan the surface of the semiconductor photoelectric device sample, and measuring the luminescence imaging of the semiconductor photoelectric device sample by using a CCD camera;
step d), comparing the measurement results of the step c) with the measurement results of the step a), respectively; if the optical signal intensity at a certain position point in the step c) is greater than the optical signal intensity in the step a), a carrier composite defect exists at the position point, and the defect corresponds to the optical energy of the continuous laser light source; if the optical signal intensity at a certain position point in step c) is equal to the optical signal intensity in step a), no carrier recombination defect exists at the position point.
2. The semiconductor defect distribution imaging detection method as claimed in claim 1, wherein: it also includes a computer for acquiring and processing imaging signals of the CCD camera.
3. The semiconductor defect distribution imaging detection method as claimed in claim 1, wherein: the three-dimensional translation stage is controlled by a stepping motor.
4. The semiconductor defect distribution imaging detection method as claimed in claim 1, wherein: the wavelength range of the continuous laser source is 300nm-2000nm, and the half-width range of the spectrum is 0.01nm-10nm.
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