CN202614177U - Comprehensive detection device of silicon wafer - Google Patents
Comprehensive detection device of silicon wafer Download PDFInfo
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- CN202614177U CN202614177U CN 201220302743 CN201220302743U CN202614177U CN 202614177 U CN202614177 U CN 202614177U CN 201220302743 CN201220302743 CN 201220302743 CN 201220302743 U CN201220302743 U CN 201220302743U CN 202614177 U CN202614177 U CN 202614177U
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- detection device
- resistivity measurement
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Abstract
The utility model discloses a comprehensive detection device of a silicon wafer, comprising a chassis, and a transmission module, a laser device, a camera, a thickness testing module, a resistivity testing module and a terminal which are arranged in the chassis, wherein the laser device, the camera, the thickness testing module and the resistivity testing module are sequentially arrayed at the upper end of the transmission module along the transmission direction of the transmission module; and the transmission module, the laser device, the camera, the thickness testing module and the resistivity testing module are respectively and electrically connected with the terminal. According to the comprehensive detection device of the silicon wafer, a new path is provided for comprehensively detecting the silicon wafer, so that the use of other instruments is reduced, the detection efficiency is improved and the error rate is reduced.
Description
Technical field
The utility model relates to a kind of silicon chip pick-up unit, specifically, relates to a kind of silicon chip complete detection device.
Background technology
At present; Silicon chip detects and mainly to comprise resistivity, minority carrier life time, crystallite, latent aspect such as split, and the detection of these aspects needs various equipment to realize, like resistivity tester, minority carrier lifetime tester etc.; Caused testing process complicated; When making production efficiency lower, increased error rate virtually, made fragment rate also high.
Can know in the prior art; The laser that utilizes specific wavelength is as excitation source; The photon of certain energy is provided, and the electronics that is in ground state in the silicon chip is after absorbing these photons and get into excited state, and the electronics that is in excited state belongs to metastable state; Can get back to ground state at short notice, and the infrared light that sends about 1150nm (the SI battery is an example) is the fluorescence of crest.Utilize highly sensitive high-resolution camera to carry out sensitization, then image is analyzed through software, can obtain minority carrier lifetime.Luminous intensity is directly proportional with the concentration of the non-equilibrium minority carrier in this zone; And defective will be the strong recombination center of minority carrier; Therefore minority carrier concentration that should the zone diminishes and causes fluorescent effect to weaken; On image, showing just becomes dark-coloured point, line, or certain zone, and compound less zone then shows as brighter zone in silicon chip.Therefore, can judge whether silicon chip exists defective, impurity or the like through observing the photoluminescence imaging.This shows, utilize photoluminescence method can realize, comprehensively detection quick, how to realize a being technical matters that needs to be resolved hurrily silicon chip.
Summary of the invention
The technical matters that the present invention solved provides a kind of silicon chip complete detection device, for the silicon chip complete detection provides new approach, when having reduced the use of other instruments, has improved detection efficiency, has reduced error rate.
Technical scheme is following:
A kind of silicon chip complete detection device comprises cabinet and inner delivery module, laser instrument, camera, thickness measuring module, resistivity measurement module and terminal thereof; Said laser instrument, camera, thickness measuring module and resistivity measurement module are emitted on said delivery module upper end successively along said transmission module direction of transfer; Said delivery module, laser instrument, camera, thickness measuring module and resistivity measurement module be electrically connected with said terminal respectively.
Further: said thickness measuring module comprises upper and lower probe of thickness measure and thickness measure controller, and the upper and lower probe of said thickness measure is a pair of capacitance principle displacement measurement probe.
Further: said resistivity measurement module comprises upper and lower probe of resistivity measurement and resistivity measurement controller, and the upper and lower probe of said resistivity measurement is a pair of electrical vortex principle resistivity measurement probe.
Further: said camera is the near infrared camera.
Further: the wavelength coverage of said camera is 900-1700nm.
Further: said laser instrument is the laser instrument of power 30W, emission optical maser wavelength 810nm.
The utility model advantage and beneficial effect are embodied in the following aspects:
1, the utility model provides new approach for the complete detection silicon chip;
2, silicon chip complete detection device detection speed can reach 1 slice/second in the utility model, has improved detection efficiency greatly;
3, silicon chip complete detection device has been realized the complete detection of aspects such as silicon chip resistivity, minority carrier life time, crystallite need not other equipment in the utility model, practices thrift operating cost;
4, silicon chip complete detection device realizes that one-time detection obtains thorough result in the utility model, greatly reduces the fragment rate of silicon chip, has guaranteed the quality of silicon chip.
Description of drawings
Fig. 1 is a silicon chip complete detection device cross-sectional view in the utility model.
Embodiment
As shown in Figure 1, be silicon chip complete detection apparatus structure synoptic diagram in the utility model.Silicon chip complete detection device comprises that cabinet 1 inner delivery module 2, laser instrument 3, camera 4, thickness measuring module 5, resistivity measurement module 6 and terminal constitutes.Laser instrument 3, camera 4, thickness measuring module 5 and resistivity measurement module 6 are arranged side by side in delivery module 2 upper ends, and discharge successively along the transmission module direction of transfer.Delivery module 2, laser instrument 3, camera 4, thickness measuring module 5 and resistivity measurement module 6 be electrically connected with the terminal respectively.
Delivery module 2 is used to transmit silicon chip; Laser instrument 3 adopts power 10W, launches the laser instrument of optical maser wavelength 810nm, is used to excite the minority carrier of silicon chip surface; Camera 4 adopts the near infrared cameras, and wavelength coverage 900-1700nm is used to take infrared picture, and camera 4 obtains on the delivery module 2 after the silicon chip image information, and image information is transferred to the terminal; Analyzing and processing is carried out to image information in the terminal, and gradation of image and minority carrier lifetime are carried out match, obtains silicon chip minority carrier lifetime value, utilizes the image information of gathering to accomplish infra-red inspection.
Thickness measuring module 5 comprises upper and lower probe of thickness measure and thickness measure controller, and resistivity measurement module 6 comprises upper and lower probe of resistivity measurement and resistivity measurement controller.The upper and lower probe of thickness measure is a pair of capacitance principle displacement measurement probe, and the upper and lower probe of resistivity measurement is a pair of electrical vortex principle resistivity measurement probe; The terminal receives the silicon chip data message of thickness measuring module 5 and 6 collections of resistivity measurement module and handles, and obtains silicon wafer thickness and resistivity.
When using silicon chip complete detection device; Delivery module 2 transmits silicon chip and passes through laser instrument 3, camera 4, thickness measuring module 5, resistivity measurement module 6 respectively; To silicon chip surface, camera 4 obtains the silicon chip image information to laser instrument 3, and image information is transferred to the terminal with laser beam irradiation; Analyzing and processing is carried out to image information in the terminal, and gradation of image and minority carrier lifetime are carried out match, obtains silicon ingot minority carrier lifetime value, utilizes the image information of gathering to accomplish infra-red inspection.After the upper and lower probe of thickness measure controller control thickness measure obtains the silicon chip data on the delivery module 2, give the terminal with related data transmission, the terminal calculate silicon wafer thickness and with thickness as parameter; After resistivity measurement controller controlling resistance rate is measured upper and lower probe and obtained the silicon chip data on the delivery module 2, give the terminal with related data transmission, the terminal calculates silicon chip resistivity.
Claims (6)
1. a silicon chip complete detection device is characterized in that: comprise cabinet and inner delivery module, laser instrument, camera, thickness measuring module, resistivity measurement module and terminal thereof; Said laser instrument, camera, thickness measuring module and resistivity measurement module are emitted on said delivery module upper end successively along said transmission module direction of transfer; Said delivery module, laser instrument, camera, thickness measuring module and resistivity measurement module be electrically connected with said terminal respectively.
2. silicon chip complete detection device as claimed in claim 1 is characterized in that: said thickness measuring module comprises upper and lower probe of thickness measure and thickness measure controller, and the upper and lower probe of said thickness measure is a pair of capacitance principle displacement measurement probe.
3. silicon chip complete detection device as claimed in claim 1; It is characterized in that: said resistivity measurement module comprises upper and lower probe of resistivity measurement and resistivity measurement controller, and the upper and lower probe of said resistivity measurement is a pair of electrical vortex principle resistivity measurement probe.
4. silicon chip complete detection device as claimed in claim 1 is characterized in that: said camera is the near infrared camera.
5. silicon chip complete detection device as claimed in claim 4 is characterized in that: the wavelength coverage of said camera is 900-1700nm.
6. silicon chip complete detection device as claimed in claim 1 is characterized in that: said laser instrument is the laser instrument of power 30W, emission optical maser wavelength 810nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220302743 CN202614177U (en) | 2012-06-25 | 2012-06-25 | Comprehensive detection device of silicon wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220302743 CN202614177U (en) | 2012-06-25 | 2012-06-25 | Comprehensive detection device of silicon wafer |
Publications (1)
| Publication Number | Publication Date |
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| CN202614177U true CN202614177U (en) | 2012-12-19 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 201220302743 Expired - Fee Related CN202614177U (en) | 2012-06-25 | 2012-06-25 | Comprehensive detection device of silicon wafer |
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| CN (1) | CN202614177U (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104457548A (en) * | 2015-01-07 | 2015-03-25 | 厦门大学 | Non-contact silicon wafer thinning thickness measurement device |
| CN104785451A (en) * | 2015-04-28 | 2015-07-22 | 华中科技大学无锡研究院 | Automatic coarse detection production line for silicon ingots |
| CN108027439A (en) * | 2015-08-10 | 2018-05-11 | 三角设计公司 | Detected in IC equipment bags with angled installation laser and camera |
| CN108872262A (en) * | 2018-05-08 | 2018-11-23 | 丹凤县荣毅电子有限公司 | A kind of electronic component detection method |
| CN111735928A (en) * | 2019-03-24 | 2020-10-02 | 尹翠哲 | Automatic lifting device for testing minority carrier lifetime of end face of polycrystal, monocrystal or cast monocrystal small square ingot |
| CN113432523A (en) * | 2021-06-24 | 2021-09-24 | 博众精工科技股份有限公司 | Silicon wafer measuring device |
| CN114167138A (en) * | 2021-12-14 | 2022-03-11 | 浙江大学杭州国际科创中心 | Method and system for generating silicon carbide wafer resistance distribution image and storage medium |
| CN114324394A (en) * | 2021-12-28 | 2022-04-12 | 上海超硅半导体股份有限公司 | Method for measuring depth of defect-free region of monocrystalline silicon wafer |
-
2012
- 2012-06-25 CN CN 201220302743 patent/CN202614177U/en not_active Expired - Fee Related
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104457548A (en) * | 2015-01-07 | 2015-03-25 | 厦门大学 | Non-contact silicon wafer thinning thickness measurement device |
| CN104457548B (en) * | 2015-01-07 | 2017-10-17 | 厦门大学 | A kind of non-contact type silicon wafer thickness thinning measurement apparatus |
| CN104785451A (en) * | 2015-04-28 | 2015-07-22 | 华中科技大学无锡研究院 | Automatic coarse detection production line for silicon ingots |
| CN108027439A (en) * | 2015-08-10 | 2018-05-11 | 三角设计公司 | Detected in IC equipment bags with angled installation laser and camera |
| CN108027439B (en) * | 2015-08-10 | 2022-12-30 | 三角设计公司 | In-bag inspection of IC devices with angularly mounted lasers and cameras |
| CN108872262A (en) * | 2018-05-08 | 2018-11-23 | 丹凤县荣毅电子有限公司 | A kind of electronic component detection method |
| CN111735928A (en) * | 2019-03-24 | 2020-10-02 | 尹翠哲 | Automatic lifting device for testing minority carrier lifetime of end face of polycrystal, monocrystal or cast monocrystal small square ingot |
| CN113432523A (en) * | 2021-06-24 | 2021-09-24 | 博众精工科技股份有限公司 | Silicon wafer measuring device |
| CN113432523B (en) * | 2021-06-24 | 2023-04-14 | 诺德凯(苏州)智能装备有限公司 | Silicon wafer measuring device |
| CN114167138A (en) * | 2021-12-14 | 2022-03-11 | 浙江大学杭州国际科创中心 | Method and system for generating silicon carbide wafer resistance distribution image and storage medium |
| CN114167138B (en) * | 2021-12-14 | 2023-07-21 | 浙江大学杭州国际科创中心 | Silicon carbide wafer resistance distribution image generation method, system and storage medium |
| CN114324394A (en) * | 2021-12-28 | 2022-04-12 | 上海超硅半导体股份有限公司 | Method for measuring depth of defect-free region of monocrystalline silicon wafer |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20121219 Termination date: 20160625 |
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| CF01 | Termination of patent right due to non-payment of annual fee |