TWI646323B - Silicon crystal material detection method and detection device - Google Patents

Abstract

A silicon crystal material testing method includes a preparation step and a testing step. The preparation step is to prepare a detection device. The detection device includes a carrier, a laser light source, and a light receiver, and a silicon crystal material to be detected is set on the carrier. The detecting step is to irradiate the surface of the silicon crystal material with the laser light source along at least a predetermined path of the silicon crystal material at a predetermined wavelength, so that the silicon crystal material generates a plurality of excitations by the laser light source along the predetermined path. Photo-fluorescence, the light receiver can receive the photo-fluorescence and generate a plurality of corresponding photo-fluorescence signals. In addition, the invention also provides a silicon crystal material detection device.

Description

Silicon crystal material detection method and detection device

The invention relates to a method and a device for detecting a silicon crystal material, in particular to a method and a detection device for irradiating the surface of a silicon crystal material along a predetermined path with a point light source.

Existing methods for detecting polycrystalline silicon wafers are mainly irradiating a high-power laser light source onto a whole wafer to be tested by using a spectroscopic technology, so that the wafer under test is excited by the laser light source to generate fluorescent light. Light, and then a camera device disposed on the wafer to be tested receives the fluorescence generated by the entire wafer to be tested, so as to know the photo-induced fluorescence intensity distribution of the wafer to be tested, thereby Determine the quality of the wafer under test.

The foregoing detection method needs to make the laser light source have a high optical power, so that the laser light source can irradiate the entire wafer to be tested uniformly and maintain the same intensity to ensure the entire wafer to be tested. The fluorescent light excited by the laser light source is excited under the same conditions. However, increasing the optical power of the laser light source consumes energy and increases cost.

Therefore, an object of the present invention is to provide a method for detecting a silicon crystal material.

Therefore, the silicon crystal material detection method of the present invention includes a preparation step and a detection step.

The preparation step is to prepare a detection device. The detection device includes a carrier, a laser light source, and a light receiver, and a silicon crystal material to be detected is set on the carrier.

The detecting step is to irradiate the surface of the silicon crystal material with the laser light source at a predetermined wavelength along at least a predetermined path of the silicon crystal material, so that the silicon crystal material generates a plurality of laser light sources along the at least one predetermined path. The excited photo-induced fluorescence, the light receiver can receive the photo-induced fluorescence and generate a plurality of corresponding photo-fluorescent signals.

Another object of the present invention is to provide a silicon crystal material detection device.

Therefore, the silicon crystal material detection device of the present invention is suitable for detecting a silicon crystal material, and includes a carrier, a laser, and a light receiver.

The stage is used for carrying the silicon crystal material, and can move along at least a predetermined path of the silicon crystal material. The laser can emit a laser light source with a predetermined wavelength, and can illuminate the surface of the silicon crystal material at a single point multiple times along the at least one predetermined path, so that the silicon crystal material generates a plurality of light sources along the at least one predetermined path. Photoluminescent fluorescence excited by the laser light source. The light receiver can receive the photo-fluorescence and generate a plurality of corresponding photo-fluorescence signals.

The effect of the present invention is that the laser light source is irradiated along the predetermined path of the silicon crystal material to generate a plurality of photoluminescence, and the photoluminescence corresponding to the predetermined path is obtained. The spectrum, so as to know back the fluorescence intensity distribution of the silicon crystal material, can quickly know the quality of the silicon crystal material.

2‧‧‧testing device

20‧‧‧ rail

201‧‧‧Preparation steps

202‧‧‧Test steps

203‧‧‧ Conversion steps

204‧‧‧ Intensity conversion step

205‧‧‧Peak conversion step

206‧‧‧Calculation steps

21‧‧‧ carrier

22‧‧‧Laser

220‧‧‧laser light source

23‧‧‧ Optical Receiver

230‧‧‧ light receiving parts

24‧‧‧ Computing Display

25‧‧‧Turntable

30‧‧‧ surface

31‧‧‧annular area

41‧‧‧ underside

42‧‧‧Top

43‧‧‧ weekly

B‧‧‧ Polycrystalline Ingot

L‧‧‧ Photo-induced fluorescence

W‧‧‧Single crystal wafer

Other features and effects of the present invention will be clearly presented in the embodiment with reference to the drawings, in which: FIG. 1 is a schematic flow chart illustrating a detection process of a first embodiment of the silicon crystal material detection method of the present invention; FIG. 2 is a schematic diagram illustrating a detection device of a first embodiment of a silicon crystal material detection method of the present invention; FIG. 3 is a partial side view schematic diagram illustrating a detection of a third embodiment of a silicon crystal material detection method of the present invention FIG. 4 is a schematic plan view to assist in explaining the detection device of the third embodiment of FIG. 3; FIG. 5 is a partial side view to illustrate a detection of a fourth embodiment of a silicon crystal material detection method of the present invention Device; FIG. 6 is a fluorescence spectrum diagram illustrating a single-point photoluminescence spectrum of a specific example 1 and a specific example 2 of the silicon crystal material detection method of the present invention; FIG. 7 is a relationship diagram of intensity versus radial position , Illustrates a radial photo-induced fluorescence intensity distribution of the specific example 1 of the present invention; FIG. 8 is a relationship diagram of intensity versus radial position, illustrating a radial photo-fluorescent intensity distribution of the specific example 2 of the present invention; FIG. 9 is a fluorescence spectrum chart illustrating a single crystal wafer at the same radial position It has a fluorescence spectrum with comparable intensity; and FIG. 10 is a graph showing the relationship between fluorescence intensity and position, illustrating a photo-induced fluorescence intensity of the specific example 3 of the present invention.

Before the present invention is described in detail, it should be noted that in the following description, similar elements are represented by the same numbers.

Referring to FIG. 1, a first embodiment of a silicon crystal material detection method of the present invention includes a preparation step 201, a detection step 202, a conversion step 203, and a calculation step 206.

With reference to FIG. 2, the preparation step 201 is first performed, a detection device 2 is prepared, and a silicon crystal material to be detected is set on the detection device 2.

Specifically, the detection device 2 includes a carrier 21 disposed on a slide rail 20 and capable of moving along a predetermined path of the silicon crystal material, a laser 22 capable of emitting a laser light source 220, and a laser A light receiver 23 of a light receiving member 230 and a computing display 24. In detail, the silicon crystal material may be a polycrystalline silicon ingot, a single crystal silicon ingot, a polycrystalline wafer, or a single crystal wafer. In this embodiment, the silicon crystal material is made of a single crystal wafer W as an example. Say It is clear that the single crystal wafer W is disposed on the stage 21, and the stage 21 can be moved along a radial direction of the single crystal wafer W by the slide rail 20, but it is not limited to this. The table 21 may also be a moving member such as a conveyor belt, and the installation of the slide rail 20 is omitted. The laser 22 is disposed above the single crystal wafer W, so that the laser light source 220 emitted by the laser 22 can vertically travel to the surface 30 of the single crystal wafer W. Preferably, the laser 22 is suitable for the laser of this embodiment. The energy of the laser light source 220 emitted by the radiator 22 is greater than the energy gap of the silicon crystal material, and the wattage ranges from 0.5W to 10W. More preferably, the wattage ranges from 0.5W to 3W. The light receiving element 230 of the light receiver 23 is disposed above the single crystal wafer W corresponding to the laser light source 220. The computing display 24 is connected to the light receiver 23 and is configured to process and display signals generated by the light receiver 23 after receiving.

Next, the detecting step 202 is performed, so that the laser 22 emits the laser light source 220 having a predetermined wavelength and is in the form of a point light source, and at the same time, the slide rail 20 is used to make the stage 21 along the laser light source 220 along the The radial movement of the single crystal wafer W enables the laser light source 220 to illuminate the surface 30 of the single crystal wafer W in the radial direction of the single crystal wafer W, so that the single crystal wafer W is in the radial direction. Generate a plurality of photoluminescences L excited by the laser light source 220 at the position, and use the light receiving member 230 to receive the photoluminescences L for transmission to the light receiver 23, thereby generating a plurality of corresponding light The photoluminescence signals of the fluorescence L are processed through the operation display 24 and can display a plurality of light rays of the photoluminescence L corresponding to the radial direction of the single crystal wafer W. Induced fluorescence spectrum.

In detail, each of the aforementioned photoluminescences L indicates that the laser light source 220 points are irradiated with the fluorescent light excited by the single crystal wafer W, and each of the photoluminescence signals represents a corresponding spectral signal of the photoluminescence L. Therefore, by processing the spectral signals of each of the photoluminescence signals, a plurality of photoluminescence of the photoluminescence L corresponding to the radial direction of the single crystal wafer W which is excited by the laser light source 220 is obtained. spectrum.

After the detection step 202 is completed, the conversion step 203 is further performed, wherein the conversion step 203 includes an intensity conversion sub-step 204 that can detect the quality of the single crystal wafer W, and a single crystal that can be calculated by calculation The peak value of the correlation parameter of the circle W is converted to at least one of steps 205.

The intensity conversion step 204 is to convert the photoluminescence spectrum into an intensity distribution. In detail, the intensity conversion sub-step 204 is to acquire a photoluminescence intensity of the photoluminescence fluorescence signal at each measurement position in a specific band to convert it into a pair of radial photoluminescence corresponding to the single crystal wafer W. Fluorescence intensity distribution.

Because the single crystal wafer W has the characteristics of circular symmetry, when the silicon crystal material detection method of the present invention measures the single crystal wafer W, this characteristic can be used to measure only a few corresponding single crystal wafers W. The photoluminescence spectrum of the photoluminescence fluorescence L in the radial direction is converted into the corresponding photoluminescence intensity distribution in the radial direction through the intensity conversion step 204, and the entire film can be obtained by pushing back. The photo-induced fluorescence intensity distribution of the single crystal wafer W is obtained, so that the quality of the entire single crystal wafer W is known. It is worth mentioning that, since the laser light source 220 of the present invention irradiates the surface area 30 of the single crystal wafer W at a single point, the light intensity per unit area of the single crystal wafer W can be easily greater than that of the existing detection methods. crystal The light intensity per unit area of the circle, therefore, the present invention can effectively improve the signal-to-noise ratio during detection by using the laser light source 220 single-point detection method.

The peak conversion sub-step 205 is to capture the peak value of the photoluminescence signal of each measurement position, so as to convert the photoluminescence of the photoluminescence light L corresponding to the radial direction of the single crystal wafer W into a plurality of photoluminescence light. Signal peak I.

When the conversion step 203 is to perform the peak conversion step 205, the calculation step 206 may be further performed to calculate a carrier lifetime τ of the single crystal wafer W. Since a carrier concentration N of the single crystal wafer W has a relative relationship with the resistance value of the single crystal wafer W, the carrier concentration N can be calculated through the resistance value of the single crystal wafer W, and The product of the single-point life cycle τ and the single-point carrier concentration N on the single-crystal wafer W is directly proportional to the single-point photoluminescence fluorescent signal peak I, so the photo-fluorescence signal peak I and carrier at each of these points can be used The carrier concentration N is calculated to obtain the life cycle τ of each point in the single crystal wafer W, that is, the average life cycle of all carriers in each point.

In detail, the calculation step 206 is to calculate the carrier doping concentration N at each point of the single crystal wafer by measuring the resistance value of each point of the single crystal wafer W, and then convert the peak value to the next step. The peak I of the photoluminescence signal obtained by 205 is divided by the corresponding doping concentration N of each of the carriers to calculate the life cycle τ of each point on the single crystal wafer (that is, τ I / N).

A second embodiment of the silicon crystal material detection method of the present invention has the same implementation steps as the first embodiment except that the second embodiment does not include the Conversion step 203 and the calculation step 206. In detail, in the second embodiment, the light receiver 23 prepared in the preparation step 201 is a light intensity receiver such as a light diode, and in the detection step 202, the light intensity can be transmitted. The receiver directly receives the sum of the photoluminescence intensity of each point in the radial direction of the single crystal wafer W, and generates multiple corresponding photoluminescence signals and obtains the radial diameter corresponding to the single crystal wafer W. Toward photo-induced fluorescence intensity distribution.

With reference to FIG. 3 and FIG. 4, a third embodiment of the silicon crystal material detection method of the present invention has the same implementation steps as the first embodiment, except that the third embodiment is along the single crystal. One of the wafers W irradiates the surface 30 of the single crystal wafer W in a circumferential direction, and the peak conversion step 205 and the calculation step 206 are not performed. In detail, in the third embodiment, the preparation step 201 is to set the stage 21 on a turntable 25, and drive the stage 21 through the turntable 25 to rotate the single crystal wafer W at a center thereof. . Next, the detecting step 202 is performed, and the laser light source 220 irradiates the surface 30 of the single crystal wafer W at the predetermined wavelength, and generates at least one annular area 31 corresponding to the surface 30 of the single crystal wafer W. A plurality of photoluminescences L excited by the laser light source 220, and the light receiver 23 (see FIG. 2) can receive the photoluminescences L and generate a plurality of photoluminescences corresponding to the photoluminescences L The photo-fluorescent signal is used to calculate a plurality of photo-fluorescence spectra corresponding to the photo-fluorescence L on the annular region 31 by using the photo-fluorescence signals. Finally, through the intensity conversion step 204, a photo-fluorescence intensity corresponding to each measurement position of the annular region 31 at a specific band is captured to be converted into a pair of corresponding single The circular photo-induced fluorescence intensity distribution of the annular region 31 of the crystal wafer W can be obtained to obtain the fluorescence intensity distribution of the circumference of the single crystal wafer W to determine whether the edge of the single crystal wafer W has Defects in slip.

With reference to FIG. 5, a fourth embodiment of the silicon crystal material detection method of the present invention has the same implementation steps as the first embodiment, except that the silicon crystal material is a polycrystalline ingot B. The The detecting step 202 is to move the stage 21 along the axial direction X of the polycrystalline ingot B through the slide rail 20 to cause the laser light source 220 to illuminate the surface of the polycrystalline ingot B along the axial direction X. In detail, the polycrystalline ingot B has a bottom surface 41 adjacent to a crucible (not shown), a top surface 42 opposite to the bottom surface 41, and a bottom surface 41 connecting the bottom surface 41 and the top surface 42 during production. A peripheral surface 43. In this embodiment, the laser light source 220 in the detecting step 202 irradiates the peripheral surface 43 of the polycrystalline ingot B along the axial direction X. As the polycrystalline ingot B is produced, the bottom surface 41 adjacent to the crucible will have more impurities, and the top surface 42 far from the crucible will also be of poor quality when cooled. Therefore, this embodiment is preferably The laser light source 220 is used to illuminate the peripheral surface 43 of the polycrystalline ingot B back and forth along the axis X multiple times to obtain a plurality of photoluminescence intensity distributions along the axis X, so as to accurately know the vicinity of the bottom surface Areas of poor quality between 41 and the top surface 42. It is worth mentioning that, in other embodiments, the peripheral surface 43 of the polycrystalline ingot B may also be irradiated only along the axis X in a single unidirectional manner. Poor quality areas, or you can irradiate back and forth multiple times to get better results.

A fifth embodiment of the silicon crystal material detection method of the present invention, the implementation steps and The first embodiment is substantially the same, except that the silicon crystal material is a polycrystalline wafer, and the detecting step 202 is to irradiate the laser light source 220 along a plurality of predetermined paths of the polycrystalline wafer. Crystal wafer surface. Specifically, since the polycrystalline wafer does not have symmetrical characteristics, it is necessary to illuminate the surface of the polycrystalline wafer with multiple paths to obtain the photoluminescence intensity of the surface, and two or more may be set as appropriate. The group laser light source 22 and the light receiver 23 accelerate the detection speed. In detail, the photo-induced fluorescence intensity of the entire surface of the polycrystalline wafer can further distinguish the grain fluorescent intensity in the polycrystalline wafer and the grain boundary between adjacent grains. ) Fluorescence intensity. Therefore, in this embodiment, it determines the quality of the polycrystalline wafer. The sum of the grain boundary fluorescence intensity of a better quality polycrystalline wafer can be obtained by dividing the sum of the grain fluorescence intensity by The sum is used as a reference value. When the sum of the fluorescence intensity of the polycrystalline wafer to be measured divided by the sum of the fluorescence intensity of the crystal grains is less than the reference value, the quality is judged to be poor.

In order to more clearly illustrate how the silicon crystal material detection method of the present invention detects and obtains the quality of the single crystal wafer W, the following two specific examples are used for description, and the specific examples 1 to 3 are implemented in accordance with the above-mentioned embodiments and the following processes. .

<Specific example 1>

A specific example 1 of the silicon crystal material detection method of the present invention is based on the silicon crystal material detection method of the first embodiment, and the intensity conversion step 204 is performed to the conversion step 203.

With reference to FIG. 1 and FIG. 2, a single crystal wafer W ₁ (not shown) is set on the stage 21, and a wavelength of 808 nm, which is close to a band gap of silicon, and a wattage of 1 W are used. Laser light source 220 to irradiate a single point multiple times in a radial direction (such as, but not limited to, a diagonal line of a single crystal wafer in other embodiments) On the surface of the wafer W ₁ , it generates a plurality of photoluminescence L. Then, a spectrometer is used as the light receiver 23 to receive the photoluminescence L, and a plurality of photoluminescence signals corresponding to the photoluminescence L are generated, and then a computer device is used as the computing display. 24. Process the photo-fluorescence signals to obtain a plurality of photo-luminescence spectra corresponding to the radial direction of the single crystal wafer W ₁ and having a wavelength range between 850 nm and 1350 nm. Finally, software in a computer device is used to capture the photoluminescence intensity of each photoluminescence spectrum in a specific band, and convert each photoluminescence intensity obtained into a pair of radial diameters corresponding to a single crystal wafer. Toward photo-induced fluorescence intensity distribution.

<Specific example 2>

The implementation conditions of a specific example 2 of the silicon crystal material detection method of the present invention are substantially the same as the specific example 1. The difference is that the specific example 2 is to detect another single crystal wafer different from the specific example 1. W ₂ (not shown).

<Specific example 3>

The implementation condition of a specific example 3 of the silicon crystal material detection method of the present invention is substantially the same as that of the specific example 1, except that the specific example 3 is a detection part of the polycrystalline ingot B, and let the thunder The radiation source 220 illuminates the peripheral surface 43 of the polycrystalline ingot B along the axial direction X (see FIG. 5).

<Data analysis>

Referring to Figure 6, Figure 6 shows this particular embodiment there are a specific example 2 of the single crystal wafer to be W _1, W ₂ thereof takes a position corresponding to a single point on each single point radially photo firefly Light spectrum. According to the fluorescence spectrum of a general measurement wafer, it can be seen from the results shown in FIG. 6 that the intensity of the single-point photoluminescence spectrum of the specific example 1 is relatively higher than the single-point photoluminescence spectrum of the specific example 2. Strength, therefore, if the strength of most of the measuring points of the single crystal wafer W ₁ is greater than the strength of the corresponding measuring points of the single crystal wafer W ₂ , or all the quantities of the single crystal wafer W ₁ The average intensity of the measurement points is greater than the average intensity of all the measurement points of the single crystal wafer W _2. It can be obtained that the quality of the single crystal wafer W ₁ of the specific example ₁ is better than that of the specific example 2 Conclusion of the quality of the single crystal wafer W ₂ .

Referring to FIG. 7 and FIG. 8, FIG. 7 shows the radial photoluminescence intensity distribution of the specific example 1 corresponding to the single crystal wafer W ₁ ; FIG. 8 shows the specific example 2 corresponding to the single crystal wafer W ₂ Radial photoinduced fluorescence intensity distribution. After further calculating the standard deviation (SD) for the intensities of FIG. 7 and FIG. 8, it is learned that the standard deviation of the radial photoluminescence intensity distribution of FIG. 7 is 3.23, and the radial photoluminescence of FIG. 8 is The standard deviation of the light intensity distribution is 6.61, which indicates that the single crystal wafer W _{1 of} the specific example ₁ has a more uniform intensity distribution than the single crystal wafer W _{2 of} the specific example 2. Therefore, the The quality of the single crystal wafer W ₁ of the specific example ₁ is better than that of the single crystal wafer W ₂ of the specific example 2.

Referring to FIG. 9, FIG. 9 shows two different concentrics of the same single crystal wafer. Circles (first and second concentric circles C1 and C2), take two points to measure the fluorescence spectrum. In detail, take two points D1, D1 'on the first concentric circle C1 (that is, the two points have the same distance from the center of the single crystal wafer) and measure the spectrum; then, on the second concentric circle C2 Take two points D2, D2 'and measure the spectrum. It can be seen from the results in FIG. 9 that the intensity of the fluorescence spectra measured on the same concentric circle with the same radial distance is equivalent. According to this, the fluorescence spectrum of the single crystal wafer can be truly symmetric. Through the silicon crystal material detection method of the present invention, the fluorescence spectrum of the single crystal wafer can be estimated by measuring the radial fluorescence spectrum. Intensity distribution to quickly judge the quality of single crystal wafers.

It should be added here that in order to clearly show that the first embodiment can indeed know the life cycle τ of the single crystal wafer W by the peak value I of the photoluminescence signal, the following is a practical measurement of a single crystal The relevant data of circle A ₁ and a single crystal wafer A ₂ are taken as examples to illustrate, and the relevant experimental data are summarized in Table 1. Among them, τ represents the life cycle of the carrier; N represents the carrier doping concentration; I as described above photoluminescence fluorescent signal representative of the peak; I _ratio and (τ × N) _ratio based on measured values of the set a ₁ is a single crystal wafer 1, to make the comparison monocrystalline wafer a _2.

It should be noted that the life cycle τ and the carrier doping concentration N of the single crystal wafer A ₁ and the single crystal wafer A ₂ are directly measured by existing measurement equipment. Therefore, it can be known from the results in Table 1 that the peak ratio I _{ratio of the} photoluminescence signal of the single crystal wafer A ₁ to the single crystal wafer A ₂ is calculated through the peak conversion step 205 of the first embodiment. It is indeed equivalent to the value of (τ × N) _ratio , and the error is less than 10%. It can be known from this that the carrier life cycle τ of a single crystal wafer can be known through the peak value I of the radial fluorescence signal and the carrier concentration N.

Referring to FIG. 10, the photoluminescence intensity along the axis X of the peripheral surface 43 of the polycrystalline ingot B measured in the manner of the specific example 3 is shown, and the existing microwave photoconductive attenuation (μ-PCD) technology is used. The photoluminescence intensity of the polycrystalline ingot B of the same portion was measured. From the measurement results in FIG. 10, it can be known that the measurement result of the polycrystalline ingot B measured by the silicon crystal material detection method of the present invention is equivalent to the measurement result of the existing μ-PCD technology, and can effectively know the area with poor quality ( That is, the area where the fluorescence intensity is relatively weak outside the two measurement points (62, 60.47589; 366, 368.747066) in Figure 10

In summary, according to the silicon crystal material detection method of the present invention, the single crystal wafer W has a circular symmetry characteristic, and the laser light source 220 is irradiated in the radial direction of the single crystal wafer W to generate a plurality of light. Fluorescence, thereby obtaining a plurality of photoluminescence spectra, and then converted into a radial photoluminescence intensity distribution through the intensity conversion step 204, so that the fluorescence of the entire single crystal wafer W can be known back The light intensity distribution can quickly know the quality of the single crystal wafer. In addition, a plurality of photoluminescence fluorescence signal peaks I can be obtained through the peak conversion step 205 and used to calculate the carrier doping of the single crystal wafer W. Impurity concentration N to know the single crystal The carrier life cycle τ of the wafer W; the laser light source 220 can also be irradiated along the circular direction of the single crystal wafer W to detect whether the edge of the single crystal wafer W has a slip defect Furthermore, the quality of polycrystalline ingots and polycrystalline wafers can be further tested by this detection method, so the purpose of the invention can be achieved.

However, the above are only examples of the present invention. When the scope of implementation of the present invention cannot be limited by this, any simple equivalent changes and modifications made according to the scope of the patent application and the contents of the patent specification of the present invention are still Within the scope of the invention patent.

Claims (17)

A silicon crystal material detection method includes: a preparation step, preparing a detection device, the detection device includes a carrier, a laser light source, and a light receiver, and a silicon crystal to be detected is set on the carrier A detection step of illuminating the surface of the silicon crystal material along the at least one predetermined path of the silicon crystal material at a predetermined wavelength with the laser light source, so that the silicon crystal material generates a plurality of laser beams along the at least one predetermined path; A photo-fluorescence excited by a light source, the light receiver can receive the photo-fluorescence and generate a plurality of corresponding photo-fluorescence signals; and a conversion step including an intensity conversion sub-step, the intensity conversion sub-step It is to capture a photoluminescence intensity of each photoluminescence fluorescence signal in a specific band to convert it into a pair of photoluminescence intensity distribution corresponding to silicon crystal material; wherein the laser light source is a single point light source, and the silicon The crystal material is a single crystal wafer, and the at least one predetermined path of the detection step is to use the laser light source to irradiate the surface of the single crystal wafer along a radial direction of the single crystal wafer. A silicon crystal material detection method includes: a preparation step, preparing a detection device, the detection device includes a carrier, a laser light source, and a light receiver, and a silicon crystal to be detected is set on the carrier A detection step of illuminating the surface of the silicon crystal material along the at least one predetermined path of the silicon crystal material at a predetermined wavelength with the laser light source, so that the silicon crystal material generates a plurality of laser beams along the at least one predetermined path; A photo-fluorescence excited by a light source, the light receiver can receive the photo-fluorescence and generate a plurality of corresponding photo-fluorescence signals; and a conversion step including an intensity conversion sub-step, the intensity conversion sub-step It is to capture a photoluminescence intensity of each photoluminescence fluorescence signal in a specific band to convert it into a pair of photoluminescence intensity distribution corresponding to silicon crystal material; wherein the laser light source is a single point light source, and the silicon The crystal material is a polycrystalline ingot, and the at least one predetermined path of the detecting step is to irradiate the surface of the polycrystalline ingot along an axial direction of the polycrystalline ingot using the laser light source. A silicon crystal material detection method includes: a preparation step, preparing a detection device, the detection device includes a carrier, a laser light source, and a light receiver, and a silicon crystal to be detected is set on the carrier A detection step of illuminating the surface of the silicon crystal material along the at least one predetermined path of the silicon crystal material at a predetermined wavelength with the laser light source, so that the silicon crystal material generates a plurality of laser beams along the at least one predetermined path; A photo-fluorescence excited by a light source, the light receiver can receive the photo-fluorescence and generate a plurality of corresponding photo-fluorescence signals; and a conversion step including an intensity conversion sub-step, the intensity conversion sub-step It is to capture a photoluminescence intensity of each photoluminescence fluorescence signal in a specific band to convert it into a pair of photoluminescence intensity distribution corresponding to silicon crystal material; wherein the laser light source is a single point light source, and the silicon The crystal material is a polycrystalline wafer, and the detecting step is to irradiate the surface of the polycrystalline wafer with the laser light source along a plurality of predetermined paths of the polycrystalline wafer. A silicon crystal material detection method includes: a preparation step, preparing a detection device, the detection device includes a carrier, a laser light source, and a light receiver, and a silicon crystal to be detected is set on the carrier A detection step of illuminating the surface of the silicon crystal material along the at least one predetermined path of the silicon crystal material at a predetermined wavelength with the laser light source, so that the silicon crystal material generates a plurality of laser beams along the at least one predetermined path; A photo-fluorescence excited by a light source, the light receiver can receive the photo-fluorescence and generate a plurality of corresponding photo-fluorescence signals; and a conversion step including a peak conversion sub-step, the peak conversion sub-step It is to capture the peak value of each photoluminescence signal to convert it into multiple photoluminescence signal peaks corresponding to the silicon crystal material; wherein the laser light source is a single point light source, and the silicon crystal material is a single crystal Circle, the at least one predetermined path of the detection step is to use the laser light source to irradiate the surface of the single crystal wafer along a radial direction of the single crystal wafer. A silicon crystal material detection method includes: a preparation step, preparing a detection device, the detection device includes a carrier, a laser light source, and a light receiver, and a silicon crystal to be detected is set on the carrier A detection step of illuminating the surface of the silicon crystal material along the at least one predetermined path of the silicon crystal material at a predetermined wavelength with the laser light source, so that the silicon crystal material generates a plurality of laser beams along the at least one predetermined path; A photo-fluorescence excited by a light source, the light receiver can receive the photo-fluorescence and generate a plurality of corresponding photo-fluorescence signals; and a conversion step including a peak conversion sub-step, the peak conversion sub-step It is to capture the peak value of each photoluminescence signal to convert it into multiple photoluminescence signal peaks corresponding to the silicon crystal material; wherein the laser light source is a single point light source and the silicon crystal material is a polycrystalline Ingots, the at least one predetermined path in the detecting step is to irradiate the surface of the polycrystalline ingot along an axial direction of the polycrystalline ingot using the laser light source. A silicon crystal material detection method includes: a preparation step, preparing a detection device, the detection device includes a carrier, a laser light source, and a light receiver, and a silicon crystal to be detected is set on the carrier A detection step of illuminating the surface of the silicon crystal material along the at least one predetermined path of the silicon crystal material at a predetermined wavelength with the laser light source, so that the silicon crystal material generates a plurality of laser beams along the at least one predetermined path; A photo-fluorescence excited by a light source, the light receiver can receive the photo-fluorescence and generate a plurality of corresponding photo-fluorescence signals; and a conversion step including a peak conversion sub-step, the peak conversion sub-step It is to capture the peak value of each photoluminescence signal to convert it into multiple photoluminescence signal peaks corresponding to the silicon crystal material; wherein the laser light source is a single point light source and the silicon crystal material is a polycrystalline Circle, the detection step is to irradiate the surface of the polycrystalline wafer with the laser light source along a plurality of predetermined paths of the polycrystalline wafer. The method for detecting a silicon crystal material according to any one of claims 4 to 6, further comprising a calculation step implemented after the peak conversion step, calculating a carrier doping concentration of the silicon crystal material, and at least A peak value of the photoluminescence signal is divided by a corresponding doping concentration of the carrier to calculate a life cycle of the carrier of the silicon crystal material. The method for detecting a silicon crystal material according to claim 1, wherein the stage is movable relative to the laser light source along the radial direction of the silicon crystal material. The method for detecting a silicon crystal material according to claim 2, wherein the stage is movable along the axial direction of the silicon crystal material. A silicon crystal material detection method includes: a preparation step, preparing a detection device, the detection device includes a carrier, a laser light source, and a light receiver, and a silicon crystal to be detected is set on the carrier A detection step of illuminating the surface of the silicon crystal material along the at least one predetermined path of the silicon crystal material at a predetermined wavelength with the laser light source, so that the silicon crystal material generates a plurality of laser beams along the at least one predetermined path; The photo-fluorescence excited by a light source, the light receiver can receive the photo-fluorescence and generate a plurality of corresponding photo-fluorescence signals, wherein the laser light source is correspondingly located above the silicon crystal material, and the stage The silicon crystal material can rotate at a center of the silicon crystal material. The detection step is to irradiate the surface of the silicon crystal material with the laser light source at the predetermined wavelength, and generate at least one annular area corresponding to the surface of the silicon crystal material. A plurality of photoluminescence signals excited by the laser light source to obtain a plurality of photoluminescence signals corresponding to the ring region; and a conversion step including an intensity conversion sub-step which captures each Photo-fluorescent signal A light-induced fluorescence intensity of a specific wavelength band, to be converted into a pair of silicon material of the photo-fluorescence intensity distribution of the annular region. A silicon crystal material detection method includes: a preparation step, preparing a detection device, the detection device includes a carrier, a laser light source, and a light receiver, and a silicon crystal to be detected is set on the carrier A detection step of illuminating the surface of the silicon crystal material along the at least one predetermined path of the silicon crystal material at a predetermined wavelength with the laser light source, so that the silicon crystal material generates a plurality of laser beams along the at least one predetermined path; A photo-fluorescence excited by a light source, the light receiver can receive the photo-fluorescence and generate a plurality of corresponding photo-fluorescence signals; and a conversion step including a peak conversion sub-step, the peak conversion sub-step It is to capture the peak value of each photoluminescence signal to convert it into multiple photoluminescence signal peaks corresponding to the silicon crystal material; wherein the laser light source is correspondingly located above the silicon crystal material, and the stage can use the A center rotation of the silicon crystal material is performed. The detection step is to irradiate the surface of the silicon crystal material with the laser light source at the predetermined wavelength, and a plurality of Photoluminescence induced by a laser light source, To obtain a plurality of light-induced fluorescent signal should annular region. A silicon crystal material detection device for detecting a silicon crystal material. The silicon crystal material detection device includes: a carrier for carrying the silicon crystal material, and capable of moving along at least a predetermined path of the silicon crystal material; The laser can emit a laser light source with a predetermined wavelength, and can illuminate the surface of the silicon crystal material at a single point multiple times along the at least one predetermined path, so that the silicon crystal material generates a plurality of light sources along the at least one predetermined path. Photoluminescence induced by the laser light source; a light receiver that can receive the photoluminescence and generate a plurality of corresponding photoluminescence signals; and a computing display connected to the light receiver for capturing Take a photoluminescence intensity of each photoluminescence signal in a specific band to convert it into a pair of photoluminescence intensity distribution corresponding to silicon crystal material. A silicon crystal material detection device for detecting a silicon crystal material. The silicon crystal material detection device includes: a carrier for carrying the silicon crystal material, and capable of moving along at least a predetermined path of the silicon crystal material; The laser can emit a laser light source with a predetermined wavelength, and can illuminate the surface of the silicon crystal material at a single point multiple times along the at least one predetermined path, so that the silicon crystal material generates a plurality of light sources along the at least one predetermined path. Photoluminescence induced by the laser light source; a light receiver that can receive the photoluminescence and generate a plurality of corresponding photoluminescence signals; and a computing display connected to the light receiver for capturing Take the peak value of each photoluminescence signal to convert it into multiple photoluminescence signal peaks corresponding to the silicon crystal material. The silicon crystal material detection device according to claim 12 or 13, wherein the carrier moves along the at least one predetermined path of the silicon crystal material through a slide rail or a turntable. The silicon crystal material detection device according to claim 12 or 13, wherein the stage is a moving part. The silicon crystal material testing device according to claim 12 or 13, wherein the wattage of the laser is between 0.5W and 10W. The silicon crystal material detection device according to claim 12 or 13, wherein the light receiver is a spectrometer or a light intensity receiver.