KR101569853B1 - Apparatus and method for inspecting defect of substrate - Google Patents
Apparatus and method for inspecting defect of substrate Download PDFInfo
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- KR101569853B1 KR101569853B1 KR1020150079901A KR20150079901A KR101569853B1 KR 101569853 B1 KR101569853 B1 KR 101569853B1 KR 1020150079901 A KR1020150079901 A KR 1020150079901A KR 20150079901 A KR20150079901 A KR 20150079901A KR 101569853 B1 KR101569853 B1 KR 101569853B1
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- light
- light source
- gray level
- substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
Abstract
The present invention relates to a substrate defect inspection apparatus and a method for inspecting a substrate, and a method and an apparatus for inspecting a substrate defect of the present invention detect the luminance of transmitted light transmitted through a substrate from a light source through a light amount sensor, And if it is determined that the defect is not within the range, the light intensity of the light source is firstly adjusted based on the light setting value for the resistivity value stored in the memory unit, and the image of the substrate And calculates an average gray level value for the sensed image and secondarily adjusts the illuminance of the light source based on the calculated gray level value so as to adjust the illuminance of the light source for defect detection of the substrate through the line scan sensor Can be adjusted accurately and quickly.
Description
The present invention relates to a substrate defect inspection apparatus, and more particularly, to a substrate defect inspection apparatus and method for inspecting a defect on a substrate based on an image captured using light transmitted through the substrate, .
In general, a substrate widely used for semiconductor device manufacturing, for example, a wafer, is made by slicing a silicon ingot thinly. When growing an ingot, impurities are mixed due to a high growth temperature, and oxygen is supplied from a quartz crucible at a concentration of 10 7 to 10 8 atom / They coexist in the single crystal. During the growth of the ingot, an air pocket is generated by voids or crystal defects without silicon atoms due to the rotational speed, the amount of oxygen, etc., and such air pockets are transferred to the sliced wafer as they are . Wafers with defects such as air pockets are mostly discarded.
In addition, the wafer undergoes thermal or physical stress during a number of processes. At this time, if there is a small defect such as a crack in the wafer, new cracks may occur due to thermal or physical stress during the process, or defective semiconductor device products may occur, resulting in a lower yield.
BACKGROUND ART [0002] A wafer defect inspection apparatus for inspecting defects on the surface or inside of a wafer is known. In this inspection apparatus, for example, light is irradiated from one side of the main surface of the wafer, an image of the wafer is photographed from the other side of the wafer, and an image analysis process is performed to check defects of the wafer. The inspection apparatus using such a transmission illumination method is required to appropriately adjust the light amount of the light source in order to obtain a clear image.
Such a wafer defect inspection apparatus is usually operated in a cassette unit, and accommodates various kinds of wafers having 10 to 25 different resistivity bands in one cassette.
In general, P-wafers having resistivity values of 100 m? Cm or more are known, and recently, low resistance wafers having resistivity values of 100 m? Cm or less, for example, P + wafers having a resistivity value of 10 m OMEGA cm to 100 m OMEGA cm, Are also being fabricated.
These wafers have different light transmittances depending on their resistivity values. That is, the larger the resistivity value, the higher the light transmittance. Particularly, in a low-resistance wafer having a resistivity value of 10 m? Cm or less, the amount of light transmitted varies depending on the resistivity value. Accordingly, when a single recipe for wafer defect inspection is used, some of the wafers may fail to secure the transmission luminance within a defect detectable range.
SUMMARY OF THE INVENTION It is an object of the present invention to provide an apparatus and method for inspecting a substrate defect which accurately and quickly sets the transmission luminance in a wafer defect detectable range.
According to an aspect of the present invention, there is provided a light emitting device comprising: a light source for emitting light from one side of a substrate; A light amount sensor disposed opposite to the light source with the substrate therebetween at a predetermined distance from the light source and detecting the brightness of the light transmitted through the substrate; A line scan sensor in which a plurality of image pickup elements are linearly arranged to obtain an image by transmitted light transmitted through the substrate; And adjusting the illuminance of the light source so that the line scan sensor has a reference luminance range capable of detecting defects based on the measured luminance measured through the light amount sensor, And a control device configured to secondarily adjust the illuminance of the light source based on the image sensed through the sensor.
According to one aspect of the present invention, the control device stores information on the light transmittance, the light setting value, and the gray level value for various resistances of the substrate, and the reference brightness range and the reference A memory unit storing information on a gray level range; A primary light source adjustment unit that first adjusts the illuminance of the light source to have the reference luminance range through information stored in the memory unit based on the measured luminance measured through the light amount sensor; And a second light source for adjusting the illuminance of the light source through information stored in the memory unit based on an average gray level value of the image acquired by the line scan sensor using light adjusted through the primary light source adjustment unit. And a light source adjustment unit.
The primary light source adjustment unit includes a luminance determination unit that compares and determines whether the measured luminance measured through the light amount sensor is within the reference luminance range; And a primary light source setting unit for adjusting the illuminance of the light source based on the information stored in the memory unit when it is determined through the brightness determination unit that the measured luminance is out of the reference luminance range.
And the secondary light source adjustment unit includes: a calculation unit that calculates an average gray level value of images captured through the line scan sensor; A gray level determination unit for determining whether the calculated average gray level value is within a reference gray level range; A compensation value calculation unit for calculating a difference value between the average gray level value and a reference gray level value within the reference gray level range when the average gray level value is determined to be within the reference gray level range; And a secondary light source setting unit for making a secondary adjustment of the illuminance of the light source by determining a light set value compensated for by the difference value based on the information stored in the memory unit.
The secondary light source adjustment unit may further include an alarm generating unit for generating an alarm when an average gray level value of an image captured through the line scan sensor is out of a reference gray level range at which the line scan sensor is capable of detecting a defect .
The substrate may be a monocrystalline silicon wafer. In this case, the light emitted from the light source is preferably infrared light having a wavelength in the range of 1050 to 1100 nm.
According to another aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: irradiating light through a light source at one side of a substrate to be inspected; Measuring a luminance of light transmitted through the substrate from the light source through a light amount sensor disposed on the other side of the substrate; Determining whether a luminance of transmitted light measured by the light amount sensor corresponds to a reference luminance range capable of detecting a defect of the substrate; Adjusting the illuminance of the light source first when the measured luminance of the transmitted light is out of the reference luminance range; Capturing an image of a part or all of a substrate with a line scan sensor using light of the primary light source; Secondarily adjusting the illuminance of the light source based on the sensed image; And inspecting a defect of the substrate through the line scan sensor using the light of the secondarily adjusted light source.
The method for inspecting a substrate defect of the present invention may further include the step of storing information on a light transmittance, a light set value, and a gray level value for various resistivity values of the substrate in a memory unit.
The step of firstly adjusting the illuminance of the light source includes the steps of: determining a light transmittance based on a measured brightness of transmitted light transmitted through the substrate; computing a resistivity value of the substrate with respect to the determined light transmittance, Based on the received information; And adjusting the light source to the determined light setting value by determining the light setting value corresponding to the determined specific resistance value based on the information stored in the memory unit.
The step of secondarily adjusting the illuminance of the light source includes: calculating an average gray level value for the image captured through the line scan sensor; Determining whether the average gray level value is within a reference gray level range; Calculating a difference value between the average gray level value and a reference gray level value within the reference gray level range when it is determined that the average gray level value is within the reference gray level range; And adjusting the light source by acquiring the light setting value compensated by the difference value from the information stored in the memory unit.
The method for inspecting a substrate defect according to the present invention may further include generating an alarm when the average gray level value is out of the reference gray level range.
According to an embodiment of the present invention, after the luminance of transmitted light is primarily measured through a light amount sensor, the illuminance of the light source suitable for defect detection is firstly adjusted, and the transmitted light of the first- The average gray level value of the obtained images is calculated and the illuminance of the light source is secondarily adjusted based on the calculated average gray level value. As a result, when defects on the wafer are inspected by irradiating light from one side of the wafer, clearer and more accurate images can be obtained and the accuracy of inspection can be greatly improved.
According to the embodiment of the present invention, the light source is adjusted in a faster and more accurate manner by utilizing the database in which the light transmittance, the optical setting value, and the gray level value are previously acquired according to the resistivity values in the primary adjustment and the secondary adjustment of the light source can do.
1 is a plan view schematically showing the overall configuration of a wafer inspection apparatus according to an embodiment of the present invention.
2 is a block diagram showing a main configuration of a wafer inspection apparatus according to an embodiment of the present invention.
3 is a view showing another example of the installation of the light amount sensor of the wafer inspecting apparatus according to the present invention.
4 is a table showing an example of a data table databaseed in the memory unit of the present invention.
5 is a diagram illustrating an exemplary configuration of a line scan sensor of the present invention and some image states captured through a line scan sensor.
6 is a flowchart illustrating a method of inspecting a substrate defect according to an embodiment of the present invention.
7 is a flowchart showing a primary light source adjustment process of FIG.
8 is a flowchart illustrating a secondary light source adjustment process of FIG.
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments described below, but may be implemented in various other forms, and these embodiments are not intended to be exhaustive or to limit the invention to the precise form disclosed. It is provided to inform.
FIG. 1 is a plan view schematically showing an embodiment of a wafer inspection apparatus as a substrate defect inspection apparatus according to the present invention, and FIG. 2 is a block diagram showing a main configuration for performing inspection of a substrate in a wafer inspection apparatus.
The wafer inspecting apparatus of the present invention includes a
The
The
The
The
The
The
The
In other words, the
In the
The primary light
The
The primary light
The secondary light
The
The gray
The compensation
For example, if the reference gray level value range measurable through the
The secondary light
The secondary light
The secondary light
The
The
Here, the inspection data for determining whether or not the defect is defective is stored in a
In the above description, it has been described that the
3 is a view showing another example of installation of the
In this case, the luminance of the light transmitted through the wafer W through the
The position of the
4 is a table showing an example of a data table databaseed in the
The present invention compares and analyzes the relationship of the light transmittance to a large number of resistivity values in consideration of the fact that the resistivity values are not consistent and appear different from each other in various kinds of wafers (P-, P +, P ++) Based on the analyzed results, the optical setting value of the light source for each of the resistivity values is obtained so as to obtain the optimum transmitted light necessary for wafer defect inspection, and the light source illuminance suitable for defect detection can be quickly and accurately set .
Referring to FIG. 4, the light transmittance is measured according to resistances of various wafers to form a database, and the optimum optical setting values of the light source for wafer defect measurement are database based on the measured data. Also, the gray level value is databaseized by the resistivity value. That is, the transmittance, the light setting value, and the gray level values are databaseized for each resistivity value of the wafer.
In the table of Fig. 4, the light setting value of the light source is defined as a level from 0 (Min) to 255 (Max). The light source level is not limited to this, and can be changed in various ranges.
As shown in FIG. 4, the data base on the wafer W measures the light transmittance of a large number of resistivity values of the wafer W, and compares the light transmittance of the wafer W with the optical setting value of the optimum light source capable of detecting defects with respect to the resistivity values . In addition, the gray level values for the image taken through the
The table of FIG. 4 shows the relationship of light transmittance, light set value, and gray level values for a number of resistivity values.
The present invention makes it possible to quickly and accurately set an optimal light source illuminance for a substrate defect inspection before performing a substrate defect inspection by utilizing such a database.
Fig. 5 is a view exemplarily showing the configuration of the
5, a plurality of
The
When calculating the average gray value for the image of the substrate through the
The image acquisition state shown in FIG. 5 is an example of a gray level for an image appearing in such a portion that has various resistivity values in one wafer, and the number of pixels is also not limited thereto. As can be seen from FIG. 5, the resistivity values are different for each pixel in the single wafer, and the luminance (gray level) corresponding thereto may also appear differently.
According to the present invention, the average gray level value is calculated before performing the actual defect inspection through the
Next, a substrate defect inspection method using the substrate defect inspection apparatus configured as described above will be described.
6 is a flowchart sequentially illustrating a method of inspecting a substrate defect according to an embodiment of the present invention.
6, the substrate defect method includes a database forming step S1, a light applying step S10, a brightness measuring step S30, a brightness determining step S50, a primary light source adjusting step S70, (S90), a secondary light source adjustment step (S110), and a defect inspection step (S130).
Hereinafter, a method of inspecting a substrate defect will be described in detail.
Referring to FIGS. 2, 4 and 6, in the database forming step S1, a plurality of resistivity values in various wafers (P-, P +, P ++ wafers) having different resistivity value bands are measured, Information on the light transmittance, light setting value, and gray level values of the light emitting diodes are collected and converted into a database.
The light transmittance means the ratio of the amount of light transmitted through the wafer W to the amount of light irradiated from the
In the light irradiation step S10, light is irradiated from one side (lower side) of the wafer W to be inspected through the light source 6 (S10). For example, when the wafer W is a monocrystalline silicon wafer, the light irradiates the infrared light having a wavelength in the range of approximately 1050 to 1100 nm. In another embodiment, X-ray light can be applied.
In the luminance measurement step S30, the luminance transmitted through the wafer W is measured using the
In the brightness determination step S50, whether or not the brightness of the transmitted light transmitted through the wafer W through the
In the primary light source adjustment step S70, when it is determined that the measured luminance of the transmitted light measured by the
In the image pickup step S90, when the light of the primary
At this time, the images picked up through the
The secondary light source adjustment step S110 includes an average gray level value calculation step S111, a step S113 for determining whether the reference gray level is within the reference gray level range, a compensation value calculation step S115, and a secondary light source setting step S115 (See FIG. 8).
In the average gray level value calculating step S111, an average gray level value of images for part or all of the wafer W picked up through the
In step S113 of determining whether the reference gray level is within the reference gray level range, the gray
In the compensation value calculation step S115, the average gray level value and the reference gray level value are compared through the compensation
In the secondary light source adjustment step S117, based on the difference between the average gray level value calculated in the compensation value calculation step S115 and the reference gray level value, the data stored in the
If the illuminance of the
FIG. 7 is a flowchart showing the primary light source adjustment step (S70) of FIG. 6 described above.
2 and 7, in the primary light source adjustment step 70, the primary light
As described above, the primary light
8 is a flowchart illustrating a secondary light source adjustment process of FIG.
Referring to FIGS. 2 and 8, in the secondary light source adjustment step S110, it is determined whether the average gray level value is within the reference gray level range (S111). If it is determined that the average gray level value is within the reference gray level range , Compares the average gray level value with the reference gray level value within the reference gray level range (S113), and stores the light set value compensated by the difference between the average gray level value and the reference gray level value And adjusts the light source 6 (S115).
If it is determined in the average gray level calculation step S111 that the average gray level value is out of the reference gray level range, an alarm can be generated through the alarm generation unit 160 (S114).
In the secondary light source adjustment step S110, the secondary light
Although the present invention has been described with reference to the accompanying drawings and the preferred embodiments described above, the present invention is not limited thereto but is limited by the following claims. Accordingly, those skilled in the art will appreciate that various modifications and changes may be made thereto without departing from the spirit of the following claims.
5: Line scan sensor 6: Light source
7: light quantity sensor 100: control device
110: memory unit 130: primary light source processing unit
131: luminance determination unit 133: primary light source adjustment unit
150: secondary light source adjustment unit 151: calculation unit
153: Gray level determination unit 155: Compensation value calculation unit
157: secondary light source setting unit 160: alarm generating unit
170: defect detection unit
Claims (12)
A light amount sensor disposed opposite to the light source at a predetermined distance from the light source with the substrate to be inspected therebetween so as to detect the brightness of the light transmitted through the substrate from the light source;
A line scan sensor in which a plurality of image pickup elements are linearly arranged to obtain an image by the transmitted light; And
The light intensity of the light source is firstly adjusted so that the line scan sensor has a reference luminance range capable of detecting defects based on the measured luminance measured through the light amount sensor, And a control device configured to secondarily adjust the illuminance of the light source based on an average gray level value of an image picked up with respect to a part or the whole of the substrate via the substrate and a previously stored resistivity value of the substrate Substrate defect inspection apparatus.
A memory unit for storing information on a light transmittance, a light setting value, and a gray level value for various resistances of the substrate, and storing information on the reference brightness range and the reference gray level range;
A primary light source adjustment unit that first adjusts the illuminance of the light source to have the reference luminance range through information stored in the memory unit based on the measured luminance measured through the light amount sensor; And
A second light source for adjusting the illuminance of the light source through information stored in the memory unit based on an average gray level value of an image acquired by the line scan sensor using light adjusted through the primary light source adjustment unit; And a control unit for controlling the substrate defects.
A brightness determination unit for comparing and determining whether the measured brightness measured through the light amount sensor is within the reference brightness range; And
And a primary light source setting unit for adjusting the illuminance of the light source based on the information stored in the memory unit when it is determined through the brightness determination unit that the measured luminance is out of the reference luminance range Device.
A calculation unit for calculating an average gray level value of images captured through the line scan sensor;
A gray level determination unit for determining whether the calculated average gray level value is within a reference gray level range;
A compensation value calculation unit for calculating a difference value between the average gray level value and a reference gray level value within the reference gray level range when the average gray level value is determined to be within the reference gray level range; And
And a secondary light source setting unit for determining a light setting value compensated for by the difference value based on the information stored in the memory unit and adjusting the illuminance of the light source in a second order.
Measuring a luminance of light transmitted through the substrate from the light source through a light amount sensor disposed on the other side of the substrate;
Determining whether a luminance of the transmitted light corresponds to a reference luminance range capable of detecting a defect of the substrate;
Firstly adjusting the light source when the measured luminance of the transmitted light is out of the reference luminance range;
Capturing an image through a line scan sensor with respect to a part or all of the substrate using the light of the primary adjusted light source;
Secondarily adjusting an illuminance of the light source based on an average gray level value of the sensed image and a resistivity value of the substrate; And
And inspecting a defect of the substrate through the line scan sensor using light of the second adjusted light source.
Determining a light transmittance based on a measured brightness of transmitted light transmitted through the substrate;
Determining a resistivity value of the substrate with respect to the determined light transmittance based on information databaseed in the memory unit; And
Determining a light setting value corresponding to the determined resistivity value based on information stored in the memory unit, and adjusting the light source to the determined light setting value.
Calculating an average gray level value for the image captured through the line scan sensor;
Determining whether the average gray level value is within a reference gray level range;
Calculating a difference value between the average gray level value and a reference gray level value within the reference gray level range when it is determined that the average gray level value is within the reference gray level range; And
And adjusting the light source by acquiring a light setting value compensated by the difference value from information stored in the memory unit.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111610197A (en) * | 2020-06-01 | 2020-09-01 | 上海御微半导体技术有限公司 | Defect detection device and defect detection method |
| CN112394071A (en) * | 2019-08-16 | 2021-02-23 | 乐人株式会社 | Substrate defect inspection device and method |
| KR20210019901A (en) * | 2019-08-13 | 2021-02-23 | (주)케파 | Optical inspection apparatus |
| CN116818785B (en) * | 2023-08-30 | 2023-12-01 | 杭州百子尖科技股份有限公司 | Defect detection method, system and medium based on machine vision |
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| JP2010161216A (en) * | 2009-01-08 | 2010-07-22 | Toshiba Corp | Pattern inspection device and method |
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2015
- 2015-06-05 KR KR1020150079901A patent/KR101569853B1/en active IP Right Grant
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2010161216A (en) * | 2009-01-08 | 2010-07-22 | Toshiba Corp | Pattern inspection device and method |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20210019901A (en) * | 2019-08-13 | 2021-02-23 | (주)케파 | Optical inspection apparatus |
| KR102250085B1 (en) * | 2019-08-13 | 2021-05-10 | (주)케파 | Optical inspection apparatus |
| CN112394071A (en) * | 2019-08-16 | 2021-02-23 | 乐人株式会社 | Substrate defect inspection device and method |
| CN112394071B (en) * | 2019-08-16 | 2024-04-09 | 乐人株式会社 | Substrate defect inspection apparatus and method |
| CN111610197A (en) * | 2020-06-01 | 2020-09-01 | 上海御微半导体技术有限公司 | Defect detection device and defect detection method |
| CN116818785B (en) * | 2023-08-30 | 2023-12-01 | 杭州百子尖科技股份有限公司 | Defect detection method, system and medium based on machine vision |
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