KR101606093B1 - Apparatus and method for inspecting defect of substrate - Google Patents

Abstract

Provided in the present invention are an apparatus and a method to inspect a defect of a substrate. The defect inspecting apparatus comprises: a stage, a line scan light source; a line scan camera; a line scan defect treating device; a through-hole light source; a through-hole camera; and a through-hole detecting part. The stage loads a substrate to be inspected on an upper surface thereof. The line scan camera is radiated from a line scan light to photograph an image using a transmitted light which transmits the substrate. The line scan defect treating device generates an inspection image by inspecting image signals photographed through the line scan camera, and detects a defect based on the inspecting image generated. A light which can be viewed with unaided eyes which did not transmit a substrate from the through-hole light source is radiated, and photographs an image of a light penetrating a through-hole of the substrate through the through-hole camera. The through-hole detecting part determines the through-hole by determining whether the light transmitted the through-hole light source by combining images acquired from the through-hole camera.

Description

[0001] APPARATUS AND METHOD FOR INSPECTING DEFECT OF SUBSTRATE [0002]

The present invention relates to a substrate defect inspection apparatus and method for inspecting a substrate for defects based on an image picked up by irradiating light onto a substrate to be inspected and using light transmitted through the substrate.

BACKGROUND ART [0002] A wafer (hereinafter referred to as a " wafer ") widely used in semiconductor device manufacturing and the like is generally made by slicing a silicon ingot into thin slices. When growing an ingot, impurities are mixed due to a high growth temperature, 10 ⁷ to 10 ⁸ atoms / cm 3 in the single crystal. During the growth of the ingot, an air pocket is generated by voids or crystal defects without silicon atoms due to the rotational speed, the amount of oxygen, etc., and such air pockets are transferred to the sliced wafer as they are . Wafers with defects such as air pockets are mostly discarded.

In addition, the wafer undergoes thermal or physical stress during a number of processes. At this time, if there is a small defect such as a crack in the wafer, new cracks may be generated due to thermal or physical stress during the process, or defective semiconductor device products may occur, resulting in a lower yield.

BACKGROUND ART [0002] A wafer defect inspection apparatus for inspecting defects on the surface or inside of a wafer is known. In this inspection apparatus, for example, light is irradiated from one side of the main surface of the wafer, an image of the wafer is photographed from the other side of the wafer, and an image analysis process is performed to check defects of the wafer. The inspection apparatus using such a transmission illumination method is required to appropriately adjust the light amount of the light source in order to obtain a clear image.

Such wafer defect inspection apparatuses are usually operated on a cassette basis and accommodate various types of wafers having 10 to 25 different resistivity value ranges in one cassette.

In general, P-wafers having resistivity values of 100 m? Cm or more are known, and recently, low resistance wafers having resistivity values of 100 m? Cm or less, for example, P + wafers having a resistivity value of 10 m OMEGA cm to 100 m OMEGA cm, Are also being fabricated.

These wafers have different light transmittances depending on their resistivity values. That is, the larger the resistivity value, the higher the light transmittance. Particularly, in a low-resistance wafer having a resistivity value of 10 m? Cm or less, the amount of light transmitted varies depending on the resistivity value. Accordingly, when a single recipe for wafer defect inspection is used, some of the wafers may fail to secure the transmission luminance within a defect detectable range.

The defect of the wafer includes an air pocket (hereinafter referred to as " pin hole ") existing on the surface or inside of the wafer, and a hole defect (hereinafter referred to as" through hole ") that completely penetrates the wafer in the thickness direction of the wafer can do.

In the wafer defect inspection apparatus, a camera having a high sensitivity and a wide camera sensor dynamic range according to a light source transmittance is generally used. Therefore, when the wafer includes a through hole, strong light passes through the through hole. In this case, in a camera with good sensitivity, smearing occurs due to strong light, so that defect recognition can not be accurately performed. Therefore, proper camera selection is required to properly recognize the defect image according to the types of defects.

In a conventional wafer defects device, an image can be deformed and imaged during imaging using a line scan sensor at a high scan rate. That is, when the line scan sensor is used, the line scan sensor or the substrate is moved, and each time one line is moved, a photographing instruction signal is outputted to the line scan sensor so that the image can be picked up in a deformed state as the image is picked up. In this case, accurate defect detection is difficult.

As the wafers described above are provided in various sizes, there is a demand for a loading configuration that can commonly check wafers of various sizes within a single wafer defective device.

Registration No. 10-0803758 (2008.02.05) Registration No. 10-0480490 (Mar. 23, 2005) Registration No. 10-0616116 (August 18, 2006)

An object of the present invention is to provide an apparatus and method for inspecting a substrate defect which improves the reliability of inspection of a substrate defect by detecting a through hole passing through the substrate.

It is another object of the present invention to provide an apparatus and method for inspecting a substrate defect, which can more accurately determine a defect by re-inspecting a defect detected through a line scan sensor.

It is another object of the present invention to provide an apparatus and method for inspecting a substrate defect in which substrates of various sizes can be inspected in common in one apparatus.

It is another object of the present invention to provide an apparatus and method for inspecting a substrate defect, which can easily check the depth of a defect with respect to the thickness of a substrate and accurately grasp the position of a defect.

Another object of the present invention is to provide an apparatus and method for inspecting a substrate defect that can adjust the illuminance of a light source more quickly and accurately so as to have an optimal luminance for a line scan sensor that inspects a defect of the substrate using transmitted light transmitted through the substrate will be.

It is another object of the present invention to provide a substrate inspection apparatus and method which can easily mount a substrate on an inspection stage and can be mounted in a parallel state.

According to one aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: a stage supporting a substrate to be inspected on an upper surface thereof; A line scan light source arranged at one side of the stage and configured to irradiate light having a wavelength that is transmitted through the substrate; At least one line scan camera disposed to face the line scan light source and configured to linearly arrange a plurality of image pickup elements to capture images of the substrate; A line scan defect processing device for determining the type and position of a defect existing in the substrate from the inspection image generated by combining the image signals acquired through the line scan camera; A through-hole light source disposed at one side of the stage, for irradiating light having a wavelength not transmitted through the substrate; A through-hole camera arranged to face the through-hole light source to acquire an image of the through-hole of the substrate; And a through-hole detecting unit for judging the through hole by combining the images acquired from the through-hole cameras.

Wherein the through-hole light source includes a plate-shaped light source assembly configured to cover a total area of the substrate, the plurality of LED lamps emitting a beveled light are arranged in a matrix form, and external light is emitted between the through- A light shielding member may be provided to block the entrance of the light.

The substrate inspection apparatus comprising: a review camera for re-imaging an image of the defect at a defect position determined through the line scan defect processing apparatus; A review light source for irradiating light that can transmit the substrate to the defect position; And determining a defect existing in the substrate from a resampled image generated by combining the image signal picked up by the review camera and determining a long-term constipation from a center point of the pinhole image or an elliptic pinhole image in the case of a pinhole defect And a defect re-inspecting unit for finally determining whether or not the pinhole defect is present.

The apparatus for inspecting a substrate defect may further include an auto focusing device that automatically adjusts a position of a focus depth of the review camera with respect to the substrate by moving the review camera in a vertical direction.

The apparatus for inspecting a substrate defect further includes a defect depth detecting device for detecting a depth of a defect detected through the line scan camera, wherein the defect depth detecting device comprises: a depth detecting camera for capturing an image of the defect; A depth detecting light source disposed on a side facing the depth detecting camera and for emitting light in a wavelength range transmitted through the substrate; A position detection sensor which irradiates laser light onto the surface of the substrate and receives light reflected from the surface of the substrate to detect a surface position of the substrate; A depth detection light source, a depth detection light source, a depth detection light source, a depth detection light source, a depth detection light source, a depth detection light source, A beam splitter for reflecting the light onto a position detection sensor; A vertical transfer device for vertically moving the depth detection camera; And a defect depth detector for determining a depth of defect based on an image captured while vertically moving the depth detecting camera, wherein the vertically moving device vertically moves the depth detecting camera with a first movement interval, Acquiring the coarse image obtained at the coarse image acquiring step, setting the position of the sharpest image acquired at the coarse image acquiring step as a reference position, and moving the depth detecting camera at a movement interval smaller than the primary movement interval And a vertical movement device driving unit for controlling the vertical movement device to perform the step of acquiring a relatively fine image by carrying out at least one time.

The stage may include a support unit having a shape corresponding to an edge of the substrate and supporting the substrate along a circumferential direction of the stage.

The substrate defect inspection apparatus may further comprise a stage transfer device for transferring the stage to a position of at least one of the line scan defect detection device, the through hole detection device, the defect inspection device, and the defect depth detection device have.

The apparatus for inspecting a substrate includes a loader portion on which a cassette containing the substrate to be inspected is placed; An aligner for pre-aligning the substrate before the substrate to be inspected is loaded on the stage; And a substrate transfer device movably disposed between the loader part, the aligner, and the stage for transferring the substrate to a desired position, wherein the loader part, the aligner, the stage, and the substrate transfer device May be configured such that the substrate holding structure is varied depending on various sizes of the substrate.

According to another aspect of the present invention, there is provided a method comprising: loading a substrate to be inspected onto a stage; A through hole camera which does not allow the substrate to pass through the one side of the substrate is imaged, an image of the substrate is picked up through the through hole camera, and an image related to the transmission state of the beveled light is obtained to determine the through hole defect of the substrate step; And irradiating light having a wavelength band that is transmitted through the substrate through a line scan light source at one side of the substrate when the through hole defect is not detected and irradiating the substrate with a plurality of band- And determining a type and position of a defect existing in the substrate from the inspection image generated by combining the image signals acquired through the line scan camera.

The method may further include re-imaging an image through a review camera at a position of a defect detected through the line scan camera, and reviewing a defect detected through the line scan camera.

The step of re-inspecting the defect may include judging whether or not the pinhole is judged by determining the long-term constipation from the center point of the elliptical pinhole image or the circular ratio of the pinhole image.

The step of inspecting a substrate defect comprises the steps of vertically moving the review camera to adjust the depth of focus of the review camera with respect to the thickness of the substrate when the depth of focus of the review camera is not aligned with the thickness of the substrate .

Wherein the substrate defect inspection method further includes a defect depth measurement step of measuring a depth of the defect with respect to the thickness of the substrate, wherein the defect depth measurement step comprises: sensing a position of the substrate; Irradiating light that is transmissive to the substrate at one side of the substrate and obtaining relatively coarse images for the defect while vertically moving the depth detection camera at intervals greater than the depth of focus of the depth detection camera; The depth detecting camera is moved up and down at intervals equal to or smaller than the depth of focus of the depth detecting camera in the upper and lower portions of the reference position with a position at which the sharpest image of the obtained rough images is located as a reference position Obtaining relatively sophisticated images; And determining the depth of the defect based on the position of the sharpest image among the sophisticated images.

The method further comprises the step of adjusting the illuminance of the line scan light source such that the line scan camera has luminance of transmitted light suitable for capturing an image between the through hole detection step and the defect detection step, Wherein the step of adjusting the illuminance of the line scan light source comprises the steps of measuring the luminance of the transmitted light irradiated through the line scan light source through the light amount sensor at one side of the substrate and controlling the luminance of the transmitted light to be within the reference luminance range An illuminance of a line scan light source is first adjusted and an image of a part or all of the substrate is obtained through the line scan camera using the light of the primarily adjusted line scan light source to calculate an average gray level value , And secondarily adjusting the illuminance of the line scan light source based on the average gray level value It can be included.

The stage may be moved to a position where the line scan camera, the through hole camera, the depth detection camera, and the review camera are disposed to change the position of the substrate.

According to an embodiment of the present invention, through-hole detection using a light that can be visually recognized through a through-hole camera, through-hole detection that is not recognized by a line scan camera can be accurately performed, .

According to an embodiment of the present invention, it is possible to increase the reliability of defect detection by re-examining defects detected through a line scan camera through a review camera.

According to an embodiment of the present invention, when a depth of a defect on a substrate is detected through a depth detecting camera, a depth mode of the depth detecting camera is variously configured to perform defect depth detection more quickly and accurately.

According to an embodiment of the present invention, the illuminance of the line scan light source is firstly adjusted through the light amount sensor, and after the image acquisition for a part or the whole of the wafer through the line scan camera, based on the average gray level value of the acquired images The illuminance of the line scan light source can be adjusted quickly and accurately so that the line scan camera has an optimal luminance for imaging an image.

And the wafer is supported by the support unit. Thus, the wafer can be stably supported, and the illumination state of the light source for defect detection can be improved.

It is possible to commonly apply wafers of various sizes in one inspection apparatus, thereby improving the usability of the inspection apparatus.

1 is a plan view schematically showing the overall configuration of a substrate inspection apparatus of the present invention.
2 is a front view schematically showing an overall configuration of a substrate inspection apparatus of the present invention.
3 is a side view schematically showing the overall configuration of the substrate inspection apparatus of the present invention.
4 is a perspective view schematically showing a configuration of a line scan defect detecting apparatus according to the present invention.
5 is a side view of the line scan defects device of FIG.
6 is a partial perspective view schematically showing a configuration of a through-hole detecting apparatus according to the present invention.
7 is a perspective view schematically showing a configuration of a defect inspection apparatus of the present invention.
8 is a perspective view schematically showing a configuration of a defect depth detecting apparatus of the present invention.
9 is a perspective view showing the configuration of the stage of the present invention.
10 is a block diagram showing the configuration of the control apparatus of the substrate inspection apparatus of the present invention.
11A is a view showing an example of a pinhole defect detected by the substrate inspection apparatus of the present invention.
11B is a view showing another example of pinhole defects detected by the substrate inspection apparatus of the present invention.
12A is a diagram showing an example in which a cassette for accommodating wafers of different sizes is commonly used in the loader section of the present invention.
12B is a view showing an example in which wafers of different sizes are commonly used in the aligner of the present invention.
12C is a diagram showing an example in which various wafer arms for holding wafers of different sizes on a transfer stage of the wafer transfer apparatus of the present invention are commonly used.
12D is a diagram showing an example in which a support unit for holding wafers of different sizes is commonly used on a stage provided in the inspection unit of the present invention.
13 is a flowchart showing a process of detecting a substrate defect through the substrate inspection apparatus of the present invention.
14A and 14B are images showing various defects detected through the inspection apparatus of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. It will be apparent to those skilled in the art that the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, It is provided to let you know.

2 is a front view of a wafer inspecting apparatus according to an embodiment of the present invention. FIG. 3 is a cross-sectional view of a wafer inspecting apparatus according to an embodiment of the present invention. Fig. 6 is a side view of a wafer inspection apparatus according to an embodiment.

1 to 3, the wafer inspecting apparatus 1 includes a loader section 10, an aligner 30, an inspection section 100, a wafer transfer apparatus 50, an input / output apparatus 70, and a control apparatus 300 ).

The loader section 10 places the cassette 11 containing the wafer W to be inspected or the defective wafer judged as defective. In the figure, four loaders 10a, 10b, 10c and 10d are provided. In the following description, it is assumed that the first to third loader units 10a, 10b, and 10c are loaded with the good wafer cassette and the fourth loader unit 10d is loaded with the bad wafer cassette.

The loader unit 10 has a loading unit 13 on which the cassette 11 is mounted and is configured to communicate with the main body 3 of the wafer inspecting apparatus 1 and includes a door 15 are provided. The loader unit 10 may be provided with a mapping sensor (not shown) for confirming (mapping) the loading state of the wafers stored in the cassette. In this mapping process, for example, it is recognized that two wafers are loaded in one slot in the cassette 11, thereby preventing wafer transfer errors.

The aligner 30 loads the wafer taken out from the loader section 10 to a predetermined position and pre-aligns the position of the wafer W before the wafer is transferred to the stage 110 of the inspection section 10. [ In the aligner 30, a flat zone or a notch of the wafer is sensed and the wafer is aligned at a predetermined position. The aligner 30 may be configured to be fixed at a predetermined position by buckling or chucking depending on the size of the wafer.

The inspection unit 100 is provided with a stage 110 on which a wafer W to be inspected is loaded. The stage 110 is arranged so as to be transportable in the X and Y directions by the stage transfer device 113. [ The stage 110 has a shape corresponding to the outer shape of the wafer W and has a substantially ring shape passing through its center portion and configured to support the edge of the wafer W. [ In another embodiment, the stage can be configured to be variously deformable according to the shape of the substrate.

The stage transfer device 113 may include a motor, a rotation shaft connected to the motor, and a linear driving device connected to the outer periphery of the rotation shaft and including a mover connected to the stage 110 and linearly moving along the direction of rotation of the rotation shaft. In another embodiment, the X, Y transfer apparatus may include various types of apparatuses such as a hydraulic drive apparatus using hydraulic pressure, a gear drive apparatus using a gear train structure, and the like.

Various defect inspection apparatuses for detecting defects on the wafer W are provided on the transfer path of the stage 110 of the inspection unit 100. The defect inspection apparatus includes a line scan defect detection apparatus 130, a through hole detection apparatus 150, a defect inspection apparatus 170, and a defect depth detection apparatus 190.

The line scan defect detection apparatus 130 obtains an image through at least one line scan camera 131 in which the image pickup elements are arranged in strips using transmitted light transmitted through the wafer W, for example, infrared light of 1050 nm to 1100 nm Thereby detecting defects existing on the surface or inside of the wafer. The defect may include various forms such as foreign substances, cracks, scratches, pinholes, etc. existing on the surface or inside of the wafer W. [

A plurality of line scan cameras 150 are provided to divide the area of the wafer W and scan the area. The line scan camera 131 is disposed at a predetermined position through the bracket 101 on one side of the inspection unit 100 to which the stage 110 is transferred in the X and Y directions. A plurality of line scan cameras 131 are sequentially fixed to the bracket 101.

The through-hole detecting device 150 irradiates a visible light, for example, a visible light having a wavelength range of 400 nm to 700 nm, which does not transmit the wafer, toward the wafer side, and uses the through-hole camera 151 at the other side of the wafer And the through hole of the wafer W is inspected by judging whether the light is transmitted or not. If the through hole is detected, it is determined that the wafer is a defective wafer, and the wafer is transferred to the defective cassette provided in the fourth loader section 10d. The through-hole camera 151 may include an area camera in which the image pickup elements are arranged in a matrix form.

The defect reviewing apparatus 170 reacquires the image for the defect through the review camera 171 at the defect position detected by the line scan camera 131 to re-determine whether or not the defect is defective.

The defect depth detecting device 190 detects a position (hereinafter referred to as "depth") of the defect detected by the line scan defect detecting device 130 or the defect reviewing device 170 with respect to the thickness of the wafer W And a depth detection camera 191. The depth detecting camera 191 is designed to have a depth of focus that is relatively smaller than the thickness of the wafer W so that the depth of the defect existing in the wafer W can be accurately measured.

The depth detection camera 191 is fixed to one side of the bracket 101 and maintains a predetermined distance from the line scan camera 1311.

The line scan camera 131, the through-hole camera 151, the review camera 171, and the depth detection camera 191 are fixed in a predetermined position within the region of the inspection unit 100. [ On the other hand, a line scan light source, a through-hole light source, a review light source, and a depth detection light source, which will be described later, are fixed at a predetermined position on a lower portion of the stage 110, In another embodiment, the line scan camera 131, the through-hole camera 151, the review camera 171, and the depth detection camera 191, or a line scan light source, a through-hole light source, a review light source, May be moved and configured to obtain conditions suitable for defect image detection.

The wafer transfer apparatus 50 is configured to move between the loader unit 10, the aligner 30 and the inspection unit 100 and to input or retrieve the wafer W from each part. The wafer transfer device 50 is rotatably mounted on a moving stage 51 and a moving stage 51 that linearly move between the loader unit 10, the aligner 30 and the inspection unit 100, And a wafer arm 53 for charging and recovering the wafer W to a desired position (see FIG. 1).

The input / output device 70 inputs a command for operating the inspection apparatus or displays information about defects detected by the inspection unit 100. The input / output device 70 may include a keyboard, a monitor, and the like. The input / output device 70 may include a monitor having a screen capable of touch input. The monitor screen may include a manual or automatic mode selection of the inspection apparatus, an operation condition input window for each of the sections, a display window for displaying defect detection information, information on the loader unit, and the like. The input device may include a separate keyboard, a mouse, and the like.

The controller 300 controls the overall operation of each part of the wafer inspection apparatus described above and analyzes the defect data detected by the inspection unit 100 to determine whether or not the wafer is defective.

FIG. 4 is a perspective view schematically showing a configuration of a line scan defective device according to an embodiment of the present invention, and FIG. 5 is a side view of the line scan defective device of FIG.

Referring to FIGS. 4 and 5, the stage 100 is connected to a stage transfer device 113 horizontally transportable in the X-Y axis to move the wafer W in the X and Y axes at the inspection position.

The line scan defective device 130 includes a line scan camera 131 and a line scan light source 133.

The line scan light source 133 includes an infrared lamp 133a for emitting infrared light having a wavelength in the range of approximately 1050 to 1100 nm and an infrared lamp 133a for condensing the light emitted from the infrared lamp 133a to form a wafer W The light guiding member 133b guides the light guiding member 133b toward the light guide member 133b. The infrared lamp 133a is electrically connected to the controller 300 to adjust the illuminance. The light emitted from the line scan light source 133 may include all light that can transmit the wafer W, such as X-ray light, in addition to infrared light.

The line scan camera 131 performs a function of detecting defects by detecting the infrared light transmitted through the wafer W from the upper side of the stage 110 and also detects the transmitted light So that the optimal illuminance of the light source can be set at the time of defect inspection. The line scan camera 131 may be structured such that a plurality of imaging elements are arranged in a line so as to acquire a partial image in the form of a band having a predetermined length with respect to the wafer W in one shot.

A light amount sensor 7 may be provided on one side of the stage 110. The light amount sensor 7 measures the luminance of light transmitted through the wafer W at one point on the wafer W. [ The light amount sensor 7 may include a voltage sensor or the like in which the magnitude of the voltage changes in accordance with the phase change of the light amount. The light amount sensor 7 primarily measures the amount of transmitted light of the wafer W and makes it possible to determine whether the luminance of the transmitted light is within the reference luminance range capable of defect detection.

6 is a perspective view schematically showing a configuration of a through-hole detecting apparatus according to an embodiment of the present invention.

6, the through-hole detecting apparatus 150 includes a through-hole camera 151, a through-hole camera 151, and a stage (not shown) fixed to a predetermined position via an additional bracket 103, And a through hole light source 155 disposed under the stage 110 for irradiating visible light having a wavelength of 400 nm to 700 nm.

The through-hole light source 155 may include a plate-shaped light source assembly in which a plurality of LED lamps 155a are arranged in a matrix form. The area of the plate-like light source assembly may be configured to cover the entire area of the wafer W. [

7 is a perspective view schematically showing a configuration of a defect inspection apparatus of the present invention.

7, the defect reviewing apparatus 170 includes a review camera 171 for capturing an image at a position where a detected defect is located based on the image obtained through the line scan camera 131, A review light source 173 disposed at a position corresponding to the review camera 171 at the bottom and an auto focusing device 175 for automatically adjusting the depth of focus of the review camera 171 with respect to the thickness of the wafer W do.

The review camera 171 may include an area camera in which the image pickup elements are arranged in a matrix form. The review camera 171 can be designed such that the depth of focus (DOF) is larger than the thickness of the wafer W. [ The depth of focus means the maximum depth of a layer that can be focused at one time. For example, when the thickness of the wafer W is 750 μm, the review camera 171 may be designed to have a depth of focus of 800 μm so that an image for the entire thickness of the wafer W can be obtained at one time.

The autofocusing device 175 (hereinafter referred to as "vertical transfer device") may include a vertical transfer device for transferring the review camera 171 in the Z-axis direction. The wafer W is supported only at the edge portion by the stage 110. [ In this case, deflection of the wafer W occurs, and the position of the depth of focus of the review camera 171 with respect to the thickness of the wafer W is changed, so that image pickup of the entire thickness of the wafer W may become impossible. In this case, the vertical transfer device 175 is operated to vertically feed the review camera 171 to adjust the depth of focus of the review camera 171 with respect to the wafer W, so that the defect image can be accurately picked up.

The review camera 171 can improve the reliability of the inspection by re-imaging the defect detected through the line scan camera 131 and re-determining the defect. That is, deformation of the sensed image may occur during image sensing while scanning at high speed through the line scan camera 131. For example, a circular pinhole may be recognized as an elliptical pinhole. In consideration of this situation, the review camera 171 again captures a defect determined through the image obtained through the line scan camera 131 and re-determines whether or not the defect is defective, thereby enhancing the reliability of the defect determination.

The vertical conveying device 175 includes a motor 175a, a rotating shaft (not shown) that rotates as the motor 175 is driven, a mover (not shown) coupled to the outer periphery of the rotating shaft and moving in the Z direction along the rotating direction of the rotating shaft, And a transfer stage 175d connected to the mover. The camera 171 is connected to the transfer stage 175d via a bracket 174. [

In another embodiment, the vertical transfer device 175 may include a hydraulic drive system, a drive system using a gear train, and the like.

The review light source 173 includes a review lamp 173a and a light guide member 173b that emit infrared light of 1050 nm to 1100 nm like the line scan light source 133. The light guide member 173b may be configured in the form of a tube so that a circular light beam is irradiated onto the wafer W. [

8 is a perspective view schematically showing a configuration of a defect depth detecting apparatus of the present invention.

The defect depth detecting device 190 has a configuration similar to the defect reviewing device 170 described previously.

The defect depth detecting apparatus 190 includes a depth detecting camera 191 for capturing an image at a position where a defect detected based on the image obtained through the line scan camera 131 or the review camera 171 is located, A depth detecting light source 193 disposed at a position corresponding to the depth detecting camera 191 in a lower portion of the depth detecting camera 191 and a vertical moving device 195 for moving the depth detecting camera 191 in the Z axis direction. In addition, the defect depth detecting apparatus 190 further includes a position sensor 197 and a beam splitter 199 for detecting the position of the wafer W. [

The depth detection camera 191 is designed to have a depth of focus smaller than the thickness of the wafer W and may include an area camera in which the image pickup elements are arranged in a matrix form. In one embodiment, the depth detection camera 191 may have a depth of focus of 10 um.

The position detection sensor 197 detects the surface position of the wafer W by, for example, irradiating the surface of the wafer W with laser light and receiving the light reflected from the wafer W surface. The position of the wafer W can be detected and the initial position for defect depth inspection of the depth detection camera 191 can be accurately set.

The beam splitter 199 is disposed between the depth detecting camera 191 and the defect detecting light source 193 to pass the light irradiated from the defect detecting light source 193, And reflects the reflected light from the wafer W to the position detection sensor 197. [

In Fig. 8, it is shown that the position detection sensor 197 is disposed adjacent to the beam splitter 199. Fig. The position detection sensor 197 may be provided at various positions. The position detection sensor 197 may be provided at a position moved upwards adjacent to the depth detection camera 191. In this case, an optical system for changing the optical path, such as a reflection mirror, may be additionally constructed.

The vertical transfer device 195 includes a motor 195a, a rotating shaft 195b that rotates as the motor 195a is driven, and a vertical transfer device 195a that is coupled to the outer periphery of the rotating shaft 195b and moves in the Z direction along the rotating direction of the rotating shaft 195b A mover 195c, and a transfer stage 195d connected to the mover 195c

The vertical transfer device 195 vertically moves the depth detection camera 191 at an interval larger than the depth of focus of the depth detection camera 191 to acquire a relatively coarse image. Next, the vertical transfer device 195 takes the position of the sharpest image acquired in the coarse image acquisition step as the reference position, and moves the depth detection camera 191 in the vertical interval from the reference position to the movement interval For example, equal to or smaller than the depth of focus of the depth detecting camera 191, thereby acquiring a relatively fine image. The step of acquiring a sophisticated image may be performed at least once while adjusting the movement interval.

By performing the step of acquiring the coarse image as described above, it is possible to confirm the position of the defect with respect to the thickness of the wafer W approximately first, thereby shortening the time for measuring the depth of the defect.

The depth of the defect is determined by determining the position of the sharpest image in the defect depth detecting unit to be described later based on the images picked up with respect to the thickness direction of the wafer W by the method described above.

9 is a perspective view showing the configuration of the stage 110 of the present invention.

Referring to FIG. 9, the stage 110 is configured to penetrate the center portion to support the edge of the wafer W. The stage 100 is provided with a support unit 115 for supporting the edge of the wafer W along the circumferential direction.

The support unit 115 includes a mount block 115a provided on the stage 110 at regular intervals along the circumferential direction and an outer end connected to the upper surface of each mount block 115a, And a support block 115c made of a resin material, which is coupled to the inner end of the guide block 110 and supports the wafer W in a fixed position.

In this configuration, the wafer tilt detection sensor 117 configured to irradiate light onto the wafer W loaded on the stage 110 and receive light reflected from the wafer W may further be included. When it is determined that the wafer W is inclined, the wafer W is transported to the defective cassette of the loader section 10d (see Fig. 1).

10 is a block diagram schematically showing the configuration of a control apparatus for controlling the inspection apparatus of the present invention.

Referring to FIG. 10, the control device 300 may include a main processing unit 310, a line scan defect processing unit 330, and a driving unit 350.

The main processing unit 310 includes an input signal receiving unit 311, a driving signal output unit 313, a line scan control unit 315, a through hole detecting unit 317, a defect review unit 319, a defect depth detecting unit 321, A wafer tilt detection unit 325, a stage driving unit 327, a defect classification unit 328, and a memory unit 329. The light source control unit 323, the wafer tilt detection unit 325,

The input signal receiving unit 311 receives a signal input from the input / output device 70.

The drive signal output unit 313 outputs a drive signal for driving the loader unit 10, the aligner 30, and the wafer transfer apparatus 50.

Referring to FIGS. 1, 4, and 10, the line scan control unit 315 outputs an image pickup instruction signal of the line scan camera 131. FIG. When the line scan camera 131 outputs an image pickup instruction signal to the line scan camera 131, the line scan camera 131 acquires a strip image and moves the stage 110 in the short side direction (Y axis direction) of the image pickup area of the line scan camera 131 do. When the movement is completed, the line scan camera control unit 315 outputs an image capture instruction signal to the line scan camera 131 to acquire another band image. The line scan camera 131 repeats this series of processes to acquire an image of the wafer W. The line scan controller 315 may be configured to output a drive signal for the line scan light source 133. [

1, 6, and 10, the through-hole processing unit 317 outputs an imaging instruction signal to the through-hole camera 151 when the wafer W is transferred from the aligner 30 to the stage 110, The image signal picked up from the through-hole camera 151 is combined to form a through-hole inspection image, and it is determined whether through-hole inspection is performed based on the through-hole inspection image. The through-hole processing unit 317 may be configured to output an operation signal for the through-hole light source 153. [

Referring to FIGS. 1, 7, 10, 11a, and 11b, the defect reinspection unit 319 reviews the detected defect based on the image obtained through the line scan camera 131. FIG. The defect re-inspecting section 319 outputs an image pickup instruction signal to the review camera 171 to cause the review camera 171 to re-image the defect detected through the line scan camera 131. [ The defect re-inspecting unit 319 combines the image signals picked up by the review camera 171 to generate a review inspection image, and judges the generated review inspection image based on the reference defect data. At this time, when the defect has a pinhole shape, the ratio of long sides (L, S) is determined from the center of the circular hole of the pinhole image or the center of the elliptic pinhole image to determine whether the pinhole exists.

1, 8, and 10, the defect depth detecting unit 321 outputs a driving signal to the position detecting sensor 197, outputs an imaging signal to the depth detecting camera 191, May be configured to output a driving signal for the pixel. Here, the defect depth detector 321 outputs a driving signal to the vertical transfer device 195 in various modes to move the depth detecting camera 191 in various moving modes. That is, a primary drive signal for transferring the depth detection camera 191 at a movement interval larger than the depth of focus of the depth detection camera 191 is output to primarily acquire a coarse image of defects in the thickness direction of the wafer, The detection camera 191 outputs a secondary drive signal for moving the depth detection camera 191 at a movement interval equal to or smaller than the depth of focus of the depth detection camera 191 to obtain a relatively fine defect image.

The defect depth detecting unit 321 drives the vertical transfer device 195 as described above and detects the position of the sharpest image based on the plurality of images in the thickness direction of the wafer W obtained through the depth detecting camera 191 Judge the depth of defect by judgment. The defect depth detector 321 may be configured to output a drive signal for the depth detection light source 193.

4, 5, and 10, the light source adjustment unit 323 compares and determines whether the measured brightness of the transmitted light measured through the light amount sensor 7 is within a reference brightness range capable of detecting a defect in the wafer W, The line scan light source 133 is firstly adjusted so that the measured luminance falls within the reference luminance range when the measured luminance is out of the reference luminance range and the average gray level of a part or all of the wafer W measured through the line scan camera 131 The illuminance of the line scan light source 133 can be adjusted in a second order so that the transmitted light has an optimum luminance capable of detecting a defect of the wafer W. [ Adjustment of the illuminance of the line scan light source 133 can be performed more quickly and accurately through light transmittance, light setting value, gray level value, etc. with respect to various resistivity values of the wafer stored in advance. The reference data for this illumination adjustment is stored in the memory unit 329 to be described later. The light transmittance, light setting value, and gray level value for various resistivity values of the wafer are database-adjusted values suitable for defect inspection through countless measurements before inspection.

Referring to FIGS. 9 and 10, the wafer tilt detector 325 determines the inclination of the wafer W based on a result detected by the wafer tilt sensor 117. That is, the light output from the detection sensor 117 and the light reflected from the wafer 117 are analyzed to determine the inclination of the wafer.

Referring to FIGS. 1 and 10, the stage driving unit 327 controls the driving of the line scanning camera 131, the through-hole camera 151, the review camera 171, and the depth detecting camera 191 of the detecting unit 100 The stage feeder 113 is driven in the X and Y directions so as to move the stage 110 to a proper position.

10, the defect classifier 328 classifies the shapes of various defects detected through the line scan defect processor 330, the defect re-inspection unit 319, and the defect depth detection unit 321, And stores the data on the defect.

The memory unit 329 stores a program for exchanging information with each of the above-mentioned parts, and the results of judgment, processing, etc., from each of the above-mentioned parts are stored. In the memory unit 329, reference defect data serving as a criterion for defect judgment can be stored. The reference defect data may include information on various defects such as pinholes, foreign matter, cracks, and scratches. In addition, the memory unit 329 may store light source adjustment information for adjusting the line scan light source 133 through the light source adjustment unit 323. [ The light source adjustment information may include light transmittance, light set value, gray level value, reference brightness range, reference gray level range, reference gray level value, and the like for various resistivity values of the wafer.

The various processing units described above are configured to be linked to each other to control the operation of each operation unit of the inspection apparatus 1 in conjunction with each other.

1, 4, 5 and 10, the line scan defect processing apparatus 330 includes an inspection image generating unit 331 for generating inspection images by combining image signals obtained from a plurality of line scan cameras 131, And a defect detector 333 for detecting a defect by comparing the generated inspection image and reference image. Information on the reference image can be retrieved from the memory unit 329 described above. In one embodiment, the main processing unit 310 is provided with a line scan control unit 315 for processing an image pickup instruction signal of the line scan camera 131. In another embodiment, the line scan controller 315 can be configured in the line scan defect processor 330.

1 and 10, the driving apparatus 350 drives the loader unit 10, aligner 30, and substrate transfer apparatus 50 according to the driving signal output from the driving signal output unit 313 .

When the line scan defect processing device 330 and the driving device 350 are integrated in the main processing device 310, the processing speed of the main processing device 310 becomes very slow. The line scan defect handling apparatus 330 and the driving apparatus 350 may be connected to the main processing apparatus 310 through the hub switch 360. [ The configuration of the control device 300 is not limited to the above-described configuration and can be changed into various forms.

11A and 11B show images of pinhole defects.

Referring to Figs. 10, 11A and 11B, the image of the defect may take various forms. The defect re-inspecting unit 319 judges the circular ratio (C) of the pinhole image and judges the pinhole when the circular ratio is a reference value, for example, 1.3 or more. Circular ratios are defined as C = 4πA / P ² , cited in the references (eg, Pattern and place: an introduction to the mathematics of geography, by Selkirk, KE, Cambridge University Press, 1982) Can be used. Where A represents the area of the image and P represents the perimeter of the image. If the circular ratio is 1, it is a circle. If the circular ratio is close to 0, it has an extremely long and thin shape. The circular ratio may be one or more as described above.
Also, the defect re-inspecting unit 319 judges the long-side sides (L, S) ratios from the center point of the elliptical pinhole image to finally determine whether the pinhole defect exists.

The inspection apparatus 1 as described above is configured to be capable of inspection for wafers of various sizes. The wafer W may have various sizes, for example, 200 mm, 300 mm, and 450 mm. In this case, it is possible to change the wafer holding structure of the portion where the wafer is loaded so that the wafers of various sizes can be inspected in the single inspection apparatus 1.

For this purpose, it is possible to change the wafer holding structure in the loader section, aligner, stage, and wafer transfer apparatus.

12A is a diagram showing an example in which a cassette for accommodating wafers of different sizes is commonly used in the loader section of the present invention.

Referring to FIGS. 1 and 12A, for example, a cassette 11a for accommodating a 200 mm wafer can be accommodated in a cassette 11b for accommodating a 300 mm wafer. The cassette 11a for a 200 mm wafer can be mounted in a 300 mm wafer cassette 11b through a separate adapter.

12B is a view showing an example in which wafers of different sizes are commonly used in the aligner of the present invention.

1 and 12B, the wafer holding structure applied to the aligner is prepared in various ways depending on the size of the wafer. The 200 mm wafer holding structure 52a is configured to support the wafer with a burr, and the 300 mm wafer holding structure 52b is configured to support the wafer in an edge grip type.

Separate holding structures 52a and 52b are prepared according to the wafer size and selectively applied to the inspection apparatus 1 according to the size of the wafer to be inspected to change the aligner 50. [

12C is a diagram showing an example in which various wafer arms for holding various different sized wafers on a transfer stage of the wafer transfer apparatus of the present invention are commonly used.

Referring to Figs. 1 and 12C, a 200 mm wafer supporting wafer arm 53a is constructed in a burgeoning manner, and a 300 mm wafer supporting wafer arm 53b is constructed in an edge gripping manner. The wafer arms 53a and 53b implemented in various ways are changed to one side of the articulated arm connected to the wafer transfer stage 51 according to the size of the wafer to be inspected.

12D is a diagram showing an example in which a support unit for holding wafers of different sizes is commonly used on a stage provided in the inspection unit of the present invention.

Referring to FIGS. 1 and 12D, the stages 110a and 110b have different outer diameters corresponding to the sizes of the wafers to be inspected and are changed and employed according to the sizes of the wafers to be inspected.

13 is a flowchart illustrating a defect inspection process using the defect inspection apparatus of the present invention.

1, 10 and 13, the cassette 11 containing the wafer to be inspected is first loaded (S1) into the loader unit 10. As shown in FIG. When the cassette loading is completed, the drive signal output unit 313 of the control device 300 outputs the drive signal to the drive unit 350. The door 15 of the loader unit 10 is opened in accordance with the driving operation of the driving device 350. [ Thereafter, a sensor provided in the loader section 10 is operated to map the wafer loaded in the cassette 11, thereby confirming the wafer loading state. The mapping result may be stored in the memory unit 329 of the control device 310, and the mapping result may be output to the monitor screen of the input / output device 70.

When the wafer mapping is completed in this manner, the wafer W is carried out of the cassette 11 by the transfer arm 53 of the transfer device 50, and the transferred wafer is transferred to the aligner 30. In the aligner 30, the flat zone or the notch portion of the wafer W is confirmed, and then preliminary alignment is performed before the wafer is transferred to the stage 110 (S3).

The wafer preliminarily aligned through the aligner 30 is transferred to the stage 110 of the inspection section 100 by the wafer transfer apparatus 50 (S5).

When the wafer W is loaded onto the stage 110, the loading state of the wafer W is sensed through a tilt sensor 117 (see FIG. 9) provided on one side of the stage 110. The tilt detection sensor 117 is a water light emission sensor that emits the irradiation light to the upper surface of the wafer W. The emitted irradiation light is reflected by the upper surface of the wafer W and is incident on the light receiving portion. The received light emission information is transmitted to the wafer tilt detector 325 of the control device 310 and is subjected to arithmetic processing of the received light emission data secured through the tilt sensor 117 to determine whether the wafer W is tilted or not ).

If it is determined in step S7 that the wafer has been tilted, the operation of the inspection apparatus 1 is stopped (S9), and the operator confirms the alignment state of the support unit 115 of the stage 110 and appropriately adjusts 9).

If it is determined in step S7 that the wafer W is normally loaded on the stage 110, the illuminance of the line scan light source 133 (refer to FIGS. 4 and 5) is adjusted (S11). Various kinds of wafers having different resistivity value bands of 10 to 25 pieces can be accommodated in one cassette of the loader unit 10. [ In general, P-wafers having resistivity values of 100 m? Cm or more are known, and recently, low resistance wafers having resistivity values of 100 m? Cm or less, for example, P + wafers having a resistivity value of 10 m OMEGA cm to 100 m OMEGA cm, Are also being fabricated.

These wafers have different light transmittances depending on their resistivity values. That is, the larger the resistivity value, the higher the light transmittance. Particularly, in a low-resistance wafer having a resistivity value of 10 m? Cm or less, the amount of light transmitted varies depending on the resistivity value. Accordingly, when a single recipe for wafer defect inspection is used, some of the wafers may fail to secure the transmission luminance within a defect detectable range.

In step S11, the transmission luminance range of the wafer to be inspected is secured before performing the defect detection by the line scan camera 131, so that the line scan camera 131 can secure an accurate image for the defect. The light amount sensor 7 measures the luminance of the transmitted light transmitted through the wafer W at one point of the wafer W in step S11. Based on the amount of transmitted light measured from the light amount sensor 7, the light source adjustment unit 323 of the main control unit 310 determines whether the luminance of the transmitted light is within the reference luminance range capable of detecting a defect. When it is determined that the luminance of the measured transmitted light is out of the reference luminance range, the light source adjustment unit 323 first adjusts the illuminance of the line scan light source 133 based on the reference data. The light of the next primary illumination-adjusted line scan light source 133 is irradiated onto the wafer W and a part or all of the wafer W is irradiated through the line scan camera 131 using the light transmitted through the wafer W. [ As shown in FIG.

The light source adjustment unit 323 calculates an average gray level value of the captured image, and re-determines whether the calculated average gray level value is within the reference brightness range. The light amount of the line scan light source 133 with respect to a specific reference value within the reference luminance range is judged and then the line scan light source 133 is secondarily adjusted to have the judged illuminance. Information on the light transmittance, light setting value, gray level value, reference brightness range, reference gray level range, reference gray level value, and the like for various resistivity values of the wafer is stored in advance in the memory unit 329, ) Adjusts the illuminance of the line scan light source 133 quickly and quickly based on this information.

When the adjustment of the illuminance of the line scan light source 133 is completed as described above, a through hole in the wafer W is detected (S13, see Fig. 6). The stage transfer device 113 is operated in accordance with the driving signal of the stage driving part 327 to transfer the stage 1110 to the lower area of the through hole camera 151. [ The through-hole detecting unit 317 of the main control device 310 drives the through-hole camera 151 and the through-hole light source 155 and detects the through- (S13).

And irradiates light to the entire surface of the wafer W from one side of the wafer W through the plate-shaped through-hole light source 155. When the through hole exists in the wafer W, the light irradiated to the through hole light source 155 passes through the through hole, and the region where the through hole exists is picked up with a relatively bright image. The through-hole detecting unit 317 receives the image signal and determines whether a through-hole exists. While the through-hole camera 151 picks up the image, the entrance of the external light is blocked by the light shielding member 153 disposed under the imaging area of the through-hole camera 151, so that an accurate image is obtained through the through-hole camera 151 can do.

If it is determined in step S13 that the through hole exists, the wafer is transferred to the defective cassette of the loader unit 10 (S14).

When the through hole detection process S13 is completed, the line scan camera 131 and the line scan light source 133 are operated to acquire a plurality of band-like images for the wafer to detect defects (S15, see FIGS. 4 and 5) . The line scan control unit 315 of the main control device 310 outputs an image pickup signal to a predetermined line scan camera 131 in accordance with the relative linear movement distance of the stage 1110. [

Infrared light is irradiated from the line scan light source 133, and the line scan camera 131 picks up an image using transmitted light that is transmitted through the substrate. The inspection image generator 331 of the line scan defect processor 330 combines the image signals output from the line scan camera 131 to generate inspection images. The defect detecting unit 333 detects the position and type of the defect existing on the wafer from the generated inspection image.

It is determined whether the pinhole size of the next detected defect is smaller than the reference size (S17). If the pinhole size is smaller than the reference size, it is transferred to the good product cassette (S18). Here, the wafer judged as good can be transported to the cassette position before inspection, or can be transported to a separate good cassette.

In step S17, when it is determined that the pinhole size is larger than the reference size, defect inspection is performed (S19).

Referring to FIGS. 7 and 10, substantially circular light is irradiated from the review light source 173 to the defective position of the wafer in accordance with the drive signal of the defect reinspection section 319 of the main processing apparatus 300. Here, the stage 110 is moved by the XY transfer device 113 so that the portion of the wafer W where the defects are located is positioned at a position corresponding to the review light source 173 and the review camera 171, As shown in FIG. Information on the defect position in the wafer W is based on the defect information detected through the line scan camera 131 in step S15.

The review camera 171 picks up an image of the defect and outputs an image signal. At this time, if the depth of focus of the review camera 171 does not match the inadequate image pickup state of the review camera 171, for example, the wafer thickness, the vertical transfer device 175 is operated to vertically feed the review camera 171 Auto focus. The auto-focusing operation may be controlled by the defect inspection unit 319 of the main control unit 310.

The defect re-inspecting unit 321 combines the image signals output from the review camera 171 to generate a test image, and re-judges the defect based on the generated test image. The defect re-judgment is performed on the basis of the information about the defect stored in the memory unit 329. [ In the case of a pinhole defect, the defect re-inspecting unit 321 judges the constriction at the longest end from the center point of the pinhole image or the center point of the elliptic pinhole image to finally determine whether the pinhole defect is present (see FIGS. 11A and 11B).

Various information on the defect determined through the defect re-inspecting unit 321 is stored in the memory unit 329. [

The step of detecting the depth of defect with respect to the next wafer thickness is performed (S21).

8 and 10, in step S21, when the defect depth detector 321 outputs a drive signal to the position detection sensor 197, light, for example, laser light is output from the position detection sensor 197 The laser beam is irradiated onto the upper surface of the wafer W through the reflecting surface 199a of the beam splitter 199 and the light irradiated on the upper surface of the wafer W is reflected from the upper surface of the wafer W to be incident on the beam splitter 199 To the position detection sensor 197 through the reflection surface 199a. The defect depth detector 321 determines the position of the wafer W based on the information about the input / output of the laser light.

Next, the defect depth detector 321 drives the vertical transfer device 195 in the first mode. In the first mode, the vertical transfer device 195 is driven so as to transfer the transfer interval of the depth detection camera 191 larger than the depth of focus of the detection camera 191. The motor 195a rotates in accordance with the first mode and the rotary shaft 195b connected to the shaft of the motor 195a rotates and the mover 195c externally sensed by the rotary shaft 195b is vertically transferred in the Z axis direction. As a result, the transfer stage 195d connected to the mover 195c moves, and the depth detecting camera 191 connected to the transfer stage 195d is transferred.

In this manner, the depth detecting camera 191 is moved in the thickness direction of the wafer to pick up a plurality of images to pick up rough images first. In the step of acquiring the coarse image in the first step, the transfer interval of the depth detection camera 191 is relatively largely transferred to acquire the image quickly, and the position of the defect is relatively quickly determined.

The depth detecting camera 191 picks up an image using the light irradiated from the depth detecting light source 193 in the lower portion of the wafer W. [ The light irradiated from the depth detecting light source 193 passes through the reflecting surface 199a of the beam splitter 199. [ The infrared light irradiated from the depth detecting light source 193 passes through the reflecting surface 199a of the beam splitter 199 and the laser light irradiated from the position detecting sensor 197 passes through the beam splitter 199 The reflection surface 199a of the reflection surface 199a.

Next, the defect depth detector 321 drives the vertical transfer device 195 in the second mode with the position of the sharpest image among the picked-up coarse images as a reference (hereinafter referred to as "reference position"). The second mode includes setting the conveyance interval of the depth detection camera 191 to be smaller than the conveyance interval of the first mode and conveying the depth detection camera 191 within a predetermined range from the reference position.

The transfer interval set in the second mode is set to be equal to or smaller than the depth of focus of the depth detection camera 191 to obtain a relatively fine image with respect to the wafer thickness. Thus, the process of acquiring a sophisticated image in the second mode can be performed at least once.

The defect depth detector 321 determines the position of the defect (depth) with respect to the thickness of the wafer by determining the position of the sharpest image among the sophisticated images.

The result thus determined is stored in the memory unit 329 of the main processing unit 310. [

The defects to be inspected in the defect depth detection step S21 may include pinholes and may include defects in addition to pinholes.

Next, the defect classification unit 328 of the main processing apparatus 310 receives information on various defects determined on the basis of the image obtained through the line scan camera 131, the review camera 151, and the depth detection camera 171 And stores them in the memory unit 329 (S23). The defect classifying section 328 can be classified according to the shape of the defect, for example.

The wafer W with the next defect detected is transferred to the defective cassette of the loader section (S14).

14A and 14B are images showing various defects detected through the inspection apparatus of the present invention.

14A and 14B, the defect classifier 328 analyzes various defects detected through steps S15, S17, S19, and S21, classifies them according to shapes, and provides detailed information on the defects, sizes of defects, Position, size and type of wafer applied.

Although the present invention has been described with reference to the accompanying drawings and the preferred embodiments described above, the present invention is not limited thereto but is limited by the following claims. Accordingly, those skilled in the art will appreciate that various modifications and changes may be made thereto without departing from the spirit of the following claims.

1: Inspection device 10: Loader section
11: cassette W: substrate (wafer)
30: aligner 50: substrate transfer device
100: Inspection section 110: Stage
113: stage transfer device 130: line scan defect inspection device
131: line scan camera 141: through-hole camera
151: review camera 171: depth detection camera
300: Control device

Claims (15)

A stage for supporting a substrate to be inspected on its upper surface;
A line scan light source arranged at one side of the stage and configured to irradiate light having a wavelength that is transmitted through the substrate; At least one line scan camera disposed to face the line scan light source, wherein a plurality of imaging elements are arranged in strips, and images the image on the substrate using light transmitted through the substrate; And a line scan defect detecting device for determining the type and position of defects existing in the inside or the surface of the substrate from the inspection image generated by combining the image signals acquired through the line scan camera. And
And a defect depth detecting device for detecting a depth of a defect detected through the line scan camera,
Wherein the defect depth detecting device comprises:
A depth detection camera for capturing an image of the defect;
A depth detecting light source disposed on a side facing the depth detecting camera and for emitting light in a wavelength range transmitted through the substrate;
A position detection sensor which irradiates laser light onto the surface of the substrate and receives light reflected from the surface of the substrate to detect a surface position of the substrate;
A depth detection light source, a depth detection light source, a depth detection light source, a depth detection light source, a depth detection light source, and a depth detection light source, And reflects the reflected light reflected from the substrate to the position detection sensor;
A vertical transfer device for vertically moving the depth detection camera; And
And a defect depth detector for determining a defect depth based on an image captured while the depth detecting camera is vertically moved,
The depth detection camera is vertically moved at a first movement interval of the vertical movement device to perform a coarse image acquisition step, a position of the sharpest image acquired in the coarse image acquisition step is set as a reference position, And a vertical movement device driver configured to perform at least one step of obtaining a relatively fine image by moving the depth detection camera at a movement interval smaller than the first movement interval at a predetermined interval from the reference position Device. The light-emitting device according to claim 1, further comprising: a through-hole light source disposed at one side of the stage, for irradiating light having a wavelength not transmitted through the substrate; A through-hole camera arranged to face the through-hole light source to acquire an image of the through-hole of the substrate; And a through-hole detecting unit that includes a through-hole detecting unit for judging the through hole by combining the image acquired from the through-hole camera. delete The apparatus of claim 2, further comprising: a review camera for re-imaging an image of the defect at a defect position determined through the line scan defect processing apparatus;
A review light source for irradiating light that can transmit the substrate to the defect position; And
Determining a defect existing in the substrate from a resampled image generated by combining the image signal picked up by the review camera, determining a short-term constipation from a center point of the pinhole image or an elliptic pinhole image in the case of a pinhole defect, A defect re-inspecting device composed of a defect re-inspecting part for finally determining whether a defect is present; And
Further comprising an autofocusing device for automatically adjusting the position of the focus depth of the review camera with respect to the substrate by moving the review camera in a vertical direction. The lighting apparatus according to claim 2, wherein the through-hole light source includes a plate-shaped light source assembly configured to cover a total area of the substrate, wherein a plurality of LED lamps emitting a bee bblite light are arranged in a matrix form,
And a shielding member interposed between the through-hole camera and the substrate to block external light from entering the through-hole camera. The method according to claim 1,
Wherein the stage has a central portion penetratingly formed in a shape corresponding to the shape of the substrate, and a support unit supporting the substrate along a circumferential direction of the stage. The substrate defects as claimed in claim 4, comprising a stage transfer device for transferring the stage to a position of at least one of the line scan defect detection device, the through hole detection device, the defect inspection device, and the defect depth detection device Inspection device. [8] The apparatus of claim 7, further comprising: a loader section on which the cassette containing the substrate to be inspected is placed; And
An aligner for pre-aligning the substrate before the substrate to be inspected is loaded on the stage; And
Further comprising a substrate transfer device movably disposed between the loader section, the aligner, and the stage to transfer the substrate to a desired position,
Wherein the loader portion, the aligner, the stage, and the substrate transfer device are configured such that the substrate holding structure is changed depending on various sizes of the substrate. Loading a substrate to be inspected onto a stage;
A through hole camera which does not allow the substrate to pass through the one side of the substrate is imaged, an image of the substrate is picked up through the through hole camera, and an image related to the transmission state of the beveled light is obtained to determine the through hole defect of the substrate step;
And a plurality of imaging elements arranged in a strip shape using light transmitted through the substrate, wherein the plurality of imaging elements are arranged in a stripe shape when light of a wavelength band that transmits through the substrate through a line scan light source is irradiated from one side of the substrate when the through hole defect is not detected Obtaining a plurality of stripe-shaped images through a line scan camera, and judging the type and position of defects present on the inside or the surface of the substrate from a test image generated by combining the image signals acquired through the line scan camera; And
And a defect depth measurement step of measuring a depth of the defect with respect to the thickness of the substrate,
The defect depth measuring step may include:
Sensing a position of the substrate;
Irradiating light that is transmissive to the substrate at one side of the substrate and obtaining relatively coarse images for the defect while vertically moving the depth detection camera at intervals greater than the depth of focus of the depth detection camera;
The depth detecting camera is moved up and down at intervals equal to or smaller than the depth of focus of the depth detecting camera in the upper and lower portions of the reference position with a position at which the sharpest image of the obtained rough images is located as a reference position Obtaining relatively sophisticated images; And
And determining the depth of the defect based on the position of the sharpest image among the sophisticated images. delete delete 10. The method of claim 9, further comprising the steps of: determining a type and position of a defect; and determining a defect depth measurement step of measuring a depth of the defect with respect to a thickness of the substrate, Further comprising the step of re-imaging the image through the camera and re-examining the detected defect through the line scan camera,
Judging whether or not a pinhole is present by judging the long-term constipation from the center point of the circular ratio of the pinhole image or the center point of the elliptic pinhole image in the step of re-inspecting the defect. 13. The method of claim 12, further comprising: vertically moving the review camera to adjust the position of the review camera's focus depth relative to the thickness of the substrate when the depth of focus of the review camera relative to the thickness of the substrate is misaligned Further comprising the steps of: The method as claimed in claim 9, further comprising the steps of: determining a through-hole defect and determining a type and position of the defect, wherein the line scan camera has a luminance of transmitted light suitable for capturing an image, Further comprising the steps of:
Wherein the step of adjusting the illuminance of the line scan light source comprises:
Wherein the illuminance of the line scan light source is adjusted so that the luminance of the transmitted light is within the reference brightness range by measuring the luminance of the transmitted light irradiated from the one side of the substrate through the line scan light source through the light amount sensor,
An image of a part or all of the substrate is obtained through the line scan camera using the light of the primarily adjusted line scan light source to calculate an average gray level value, and based on the average gray level value, And adjusting the illuminance of the scan light source to a second degree. 14. The method of claim 13, wherein the stage moves to a position where the line scan camera, the through hole camera, the depth detection camera, and the review camera are disposed to change the position of the substrate.

Images