CN102422149A - Polycrystalline wafer inspection method - Google Patents
Polycrystalline wafer inspection method Download PDFInfo
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- CN102422149A CN102422149A CN201080020208XA CN201080020208A CN102422149A CN 102422149 A CN102422149 A CN 102422149A CN 201080020208X A CN201080020208X A CN 201080020208XA CN 201080020208 A CN201080020208 A CN 201080020208A CN 102422149 A CN102422149 A CN 102422149A
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- 238000000034 method Methods 0.000 title claims abstract description 41
- 238000007689 inspection Methods 0.000 title claims abstract description 35
- 230000003287 optical effect Effects 0.000 claims abstract description 29
- 230000007547 defect Effects 0.000 claims abstract description 17
- 230000002950 deficient Effects 0.000 claims description 40
- 230000003760 hair shine Effects 0.000 claims description 4
- 238000005286 illumination Methods 0.000 abstract description 5
- 239000013078 crystal Substances 0.000 abstract description 4
- 230000001678 irradiating effect Effects 0.000 abstract description 2
- 238000002425 crystallisation Methods 0.000 description 25
- 230000008025 crystallization Effects 0.000 description 25
- 238000001514 detection method Methods 0.000 description 6
- 230000001788 irregular Effects 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 3
- 238000010612 desalination reaction Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
- G01N21/9505—Wafer internal defects, e.g. microcracks
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3554—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for determining moisture content
- G01N21/3559—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for determining moisture content in sheets, e.g. in paper
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
A polycrystalline wafer inspection method has steps of: irradiating infrared light (3) toward an illumination position (P1) on a polycrystalline wafer (1) from a light source (2) arranged so that the optical axis passes by the illumination position (P1); photographing, by a camera (6) for photographing a photographing position (P2) on the polycrystalline wafer (1) separated a predetermined distance (D) from the illumination position (P1) in a surface direction of the polycrystalline wafer (1), the infrared light (3) being incident from the illumination position (P1), repeating reflection and refraction at crystal grain boundaries and defects inside the polycrystalline wafer (1), and exiting from the photographing position (P2); detecting defects in the polycrystalline wafer (1) from the brightness difference between a defect-free portion and a defect portion on a photographed image obtained by the camera (6). This inspection method makes it possible to obtain a photographed image including a light crystal pattern of the polycrystalline wafer (1) and therefore capable of clearly identifying the presence of defects and to easily and reliably detect the defects.
Description
Technical field
The present invention relates to the method for the defective in a kind of polycrystalline sheet of checking polycrystalline silicon used for solar battery sheet etc. through infrared transmitting.
Background technology
In addition; Patent documentation 2 discloses following a kind of method; It is from the surface and the back side illuminaton infrared ray of polycrystalline sheet; Take from the infrared reflection light on surface and from the infrared transmitting light at the back side by infrared camera, detect the inner defective of breaking of polycrystalline sheet according to comparative result from surface and the view data at the back side.
Yet; At the inspection object is under the situation of polysilicon chip, and according to the image pickup method of common infrared transmitting light, the crystallization figure that is formed by crystallization direction, grain boundary or its profile is also obtained as image; Therefore; In the process of Flame Image Process, be difficult to identify the difference of crystallization figure and defective, the omission that erroneous detection or defective take place is easily surveyed.
The prior art document
Patent documentation 1: TOHKEMY 2007-258555 communique
Patent documentation 2: TOHKEMY 2007-218638 communique
Summary of the invention
The objective of the invention is to, in shooting process desalination by the crystallization direction of polycrystalline sheet, crystalline boundary with and the crystallization figure that forms of wheel Guo, detect the interior defective of polycrystalline sheet reliably.
Based on above-mentioned problem, the inventor has carried out polycrystalline sheet irradiation infrared ray repeatedly, and observes the ultrared experiment of its transmission, the opinion below the result has obtained.That is,, then can not desalinate the crystallization figure of the polycrystalline sheet in the photographic images if directly observe the infrared ray that sees through the polycrystalline sheet at ultrared irradiation position.But; When the ultrared observation place of the irradiation position of infrared ray and institute's transmission be between the camera site of camera suitable at interval apart from the time; Then can desalinate the crystallization figure of polycrystalline sheet, and can only make the brightness of defective in the polycrystalline sheet different with the brightness of other normal parts.The present invention accomplishes according to such opinion.
In order to achieve the above object, according to the present invention, following technical scheme is provided:
(1) a kind of inspection method of polycrystalline wafer, it has:
Light source from being configured with the mode of optical axis through the irradiation position on the polycrystalline sheet shines ultrared operation to said irradiation position;
Use camera; To reflecting repeatedly with defective and reflect the operation that the infrared ray of the camera site ejaculation of back from the said polycrystalline sheet is taken from said irradiation position incident and by the inner grain boundary of said polycrystalline sheet; Wherein this camera site is to leave the position of preset distance from said irradiation position to the surface direction of said polycrystalline sheet, and this camera is used to take said camera site;
On the photographic images that obtains by said camera, detect the operation of defective in the said polycrystalline sheet according to the zero defect part and the luminance difference of defect part.
(2) according to the inspection method of (1) described polycrystalline sheet, it is characterized in that, said camera site is set on said polycrystalline sheet and the surface face opposition side that is set with said irradiation position.
(3) according to the inspection method of (1) described polycrystalline sheet, it is characterized in that, said camera site is set on the identical surface of the face with being set with said irradiation position of said polycrystalline sheet.
(4) inspection method of each described polycrystalline sheet in basis (1)～(3); It is characterized in that; Said light source is a single light source, and the mode of the optical axis of said light source to extend to said camera site side from said irradiation position is with respect to the surface tilt of said polycrystalline sheet.
According to the inspection method of each described polycrystalline sheet in (1)～(3), it is characterized in that (5) said light source is with respect to said camera site a plurality of light sources of balanced configuration roughly,
The said optical axis of each said light source is the mode to extend to said camera site side from each said irradiation position respectively, with the surface tilt of same pitch angle with respect to said polycrystalline sheet.
(6) according to the inspection method of each described polycrystalline sheet in (1)～(5), it is characterized in that said light source is a linear light sources, said camera is a circuit sensing type camera, and said camera detects the infrared ray by cylindrical lens optically focused.
(7) according to the inspection method of each described polycrystalline sheet in (1)～(5), it is characterized in that said light source is the ring-shaped light source that is formed with annular irradiation area,
Said camera is with the inboard of the said irradiation area of the annular regional sensing type camera as shooting area,
Said camera detects by the said infrared ray that amplifies with lens light gathering.
The invention effect
According to the inspection method of polycrystalline sheet of the present invention, incide infrared ray interreflection and refraction in the polycrystalline sheet of polycrystalline sheet from irradiation position, and the camera site from polycrystalline sheet from irradiation position to the face direction of polycrystalline sheet that separate preset distance from is penetrated.Through the infrared ray that penetrates from this camera site by camera, the photographic images that can obtain to make the desalination of crystallization figure and can clearly discern the defective of existence, and can be easily and detect defective reliably.
Particularly; Do not exist at the polycrystalline sheet under the situation of defective; Infrared ray is interreflection or refraction in the polycrystalline sheet; The ultrared intensity that arrives the camera site is roughly become evenly and hardly receives the influence of crystallization figure, therefore, the photographic images that obtains by camera become do not reflect polycrystalline sheet crystallization figure, the even brightness image.
Yet, in the polycrystalline sheet, exist under the situation of defective, cause the infrared ray irregular reference by this defective, and make the ultrared intensity that arrives the camera site inhomogeneous.Therefore, on the photographic images that is obtained by camera, compare with the situation that does not have defective, defective can display as the different zone of brightness.Like this, according to the present invention, by the photographic images of camera acquisition; The influence of the crystallization figure that receives hardly to produce by the crystallization direction of polycrystalline sheet, grain boundary and wheel Guo thereof; Only defect part is different with the brightness of zero defect part, therefore, can detect the defective in the polycrystalline sheet reliably.
Description of drawings
Fig. 1 is the side view of optical system that is used for the polycrystalline sheet inspection method of embodiment of the present invention.
Fig. 2 is the front view of optical system that is used for the polycrystalline sheet inspection method of embodiment of the present invention.
Fig. 3 is the key diagram of infrared ray in the situation of inner reflection that takes place of polycrystalline sheet and refraction.
Fig. 4 A is the photo of the photographic images of the polycrystalline sheet through infrared radiation of the present invention.
Fig. 4 B is the photo of photographic images of the polycrystalline sheet that passes through infrared radiation of reference example.
Fig. 5 is the side view of optical system of polycrystalline sheet inspection method that is used for the variation of embodiment of the present invention.
Fig. 6 is the side view of optical system of polycrystalline sheet inspection method that is used for the variation of embodiment of the present invention.
Fig. 7 is the side view of optical system of polycrystalline sheet inspection method that is used for the variation of embodiment of the present invention.
Fig. 8 is the vertical view of the examination scope (range of observation) on the polycrystalline sheet.
Fig. 9 is the side view of optical system of polycrystalline sheet inspection method that is used for the variation of embodiment of the present invention.
Embodiment
Fig. 1 and Fig. 2 represent to be used for the optical system of inspection method of the polycrystalline sheet 1 of embodiment of the present invention.Fig. 1 representes to check that direction (the conveyance direction of polycrystalline sheet 1) A is the side view of the optical system of state from right to left, and Fig. 2 representes to check that direction A is the front view from the optical system of the state of paper in front of paper.
With reference to Fig. 1, Fig. 2, the optical system of the inspection method of the polycrystalline sheet 1 that is used for embodiment of the present invention is described.
At first, from being disposed at the linear light sources 2 of polycrystalline sheet 1 lower face side, the infrared ray 3 of line (line) shape that the direction of the edge and the conveyance direction A quadrature of polycrystalline sheet 1 is extended exposes to the irradiation position P1 of the wire of polycrystalline sheet 1.At this moment, so that the optical axis of the light source 2 through irradiation position P1 disposes light source 2 with respect to the mode of the surface normal n1 deflection of polycrystalline sheet 1.Particularly, the optical axis of light source 2 constitutes with infrared ray 3 mode that the P2 side is extended from irradiation position P1 side direction camera site that penetrates from light source 2, forms inclined angle alpha with respect to normal n1.
Such linear light sources 2 can linearly be disposed by a plurality of infrared light-emitting diodes and form, or by bar-shaped infrared light sources and the constituting of light source cover that is formed with the wire slit.
That kind of meaning property as shown in Figure 3 ground expression reflects repeatedly in the inside of polycrystalline sheet 1 and reflect from the infrared ray 3 of irradiation position P1 incident, and behind the interreflection of the table back side of polycrystalline sheet 1 arrival camera site P2.Infrared ray 3 parts that arrive camera site P2 reflect, and a part directly penetrates from the surface of polycrystalline sheet 1.Wherein, utilize to be configured to make the camera 6 of its optical axis 7, auto heterodyne is acted as regent put the infrared ray 3 that P2 penetrates and take, thereby obtain photographic images through camera 6 through camera site P2.At this, this camera site P2 is set in from irradiation position P1 leaves on the position of preset distance D to the surface direction of polycrystalline sheet 1.
In this embodiment, camera 6 is configured in a side opposite with respect to polycrystalline sheet 1 and light source 2.In addition, the optical axis 7 of this camera 6 passes through camera site P2, and becomes vertical with respect to the surface of polycrystalline sheet 1.
The wavelength that is the infrared ray 3 of wire irradiation is the wavelength that is suitable for detecting inherent vice, is preferably the for example wavelength region may of 0.7 μ m～2.5 μ m.In addition, camera 6 also is preferably and in this wavelength region may, has good susceptibility.
Camera site P2 is set in from irradiation position P1 and leaves on the position of preset distance D.This distance B waits according to the crystalline texture of polycrystalline sheet 1 or its thickness and sets, and is set on the optimum position of desalination crystallization figure.
In addition, inspection method of the present invention is preferably polycrystalline sheet 1 with thickness 0.1～0.25mm as object.The thicker of polycrystalline sheet 1 is then carried out refraction, reflection or the absorption of infrared ray 3 in the inside of polycrystalline sheet 1, thereby reduction can't obtain distinct photographic images by the intensity of the infrared ray 3 of camera 6 shootings.If the thickness attenuation of polycrystalline sheet 1 has then reduced refraction and order of reflection that infrared ray 3 produced before arriving camera site P2, and residual on the photographic images that camera 6 is obtained the crystallization figure arranged.
In addition, the optical axis of light source 2 preferably sets more than 20 ° and in the scope below 40 ° with respect to the inclined angle alpha of polycrystalline sheet 1 normal to a surface n1.If inclined angle alpha is less than 20 °; Then infrared ray 3 arrives the refraction required before leaving the camera site P2 of preset distance D from irradiation position P1 or the increased frequency of reflection, has reduced the intensity of the infrared ray 3 that camera 6 takes like this and can't obtain distinct photographic images.Otherwise if inclined angle alpha, has then reduced infrared ray 3 required refraction and order of reflection before arriving camera site P2 greater than 20 °, residual on photographic images have a crystallization figure.
And then the preset distance D between irradiation position P1 and the camera site P2 is preferably set to 1～3mm.If preset distance D is less than 1mm, then infrared ray 3 required refraction and order of reflection before arriving camera site P2 reduces, and on photographic images, the crystallization figure can residually be arranged like this.If during preset distance D size 3mm, the number of times increase that then reflects and reflect, the intensity of the infrared ray 3 that camera 6 is taken reduces and can't obtain distinct photographic images.
In the inspection method of polycrystalline sheet 1 of the present invention, thickness, inclined angle alpha and the preset distance D of above-mentioned polycrystalline sheet 1 suitably is set in the above-mentioned scope, reducing the influence of crystallization figure, and obtain distinct photographic images.
Optical system in the inspection method of the polycrystalline sheet 1 that is used for implementing to constitute as stated; Passed through the infrared ray 3 of the area free from defect that does not have defective of polycrystalline sheet 1, through the crystallization direction of the crystal grain of a plurality of irregular existence and the refraction repeatedly and the reflection back arrival camera site P2 of grain boundary.Infrared ray 3 through repeatedly irregular refraction and reflection arrives when irradiation position P1 leaves the camera site P2 of preset distance D; Influence through each crystal grain reflects and reflection is produced is cancelled out each other; Therefore, be wire photographic images by camera 6 photographic images that P2 photographs in the camera site with uniform luminance.
On the other hand, exist the situation of defective 4 different in the polycrystalline sheet 1,, therefore on the photographic images that camera site P2 photographs, occurred by the shadow of defective 4 generations or bright part because infrared ray 3 produces irregular reference or absorption by defective 4 with above-mentioned situation.The shadow that this defective 4 produces or the brightness of light, different with the photographic images that forms by infrared ray 3 through above-mentioned area free from defect, therefore, can detect defective 4 through the brightness of comparing both.
Through one side polycrystalline sheet 1 is carried to conveyance direction A, continuously times without number carry out above operation on one side, can obtain to have the photographic images of the area shown in Fig. 4 A, Fig. 4 B.
Fig. 4 A, Fig. 4 B represent that camera 6 taken the photographic images of the infrared ray 3 that sees through the zone that comprises defective 4.
In Fig. 4 A, on, even brightness background image 3 that form, be formed with the bright image that has the shadow that produces by the infrared ray that has passed through defective 43 by the infrared ray that has passed through area free from defect.Therefore, through from the different zone of even brightness background image sensed luminance, can be simply and defect recognition 4 reliably.In addition, Fig. 4 A represent with thickness be the polycrystalline sheet 1 of 0.2mm as the defects detection object, and set preset distance D=2mm, inclined angle alpha=20 ° and the photographic images that obtains.
In addition, in the present invention, camera site P2 is set at from irradiation position P1 and leaves on the position of preset distance D=2mm to the surface direction of polycrystalline sheet 1.Different therewith; When the camera site being set at preset distance D on the extended line of optical axis of light source 2 (with reference to Fig. 1) less than the position P3 of 1mm; P3 has taken without fully reflecting repeatedly and reflecting and the infrared ray 3 of ejaculation in the camera site; Therefore, photographic images is the image that receives the influence of grain boundary.Therefore, even form photographic images by the infrared ray 3 in the zone of having passed through to comprise defective 4, also shown in Fig. 4 B, the part that receives defective 4 influences is buried in the crystallization figure, and is difficult to defect recognition 4 and crystallization figure.
Fig. 5 is illustrated in the downside of polycrystalline sheet 1; Two linear light sources 2 are configured on the position with respect to the normal on the P2 of camera site (optical axis 7 of camera 6) line symmetry, by each light source 2 with the infrared ray 3 of wire from the example of different vergence directions towards two irradiation position P1 of polycrystalline sheet 1 irradiation.In addition, be set at roughly consistent with the pitch angle that the surface of polycrystalline sheet 1 forms the optical axis of each light source 2 in the present example.According to this example, except having above-mentioned effect, the light quantity of 6 detected infrared rays 3 of ability of camera is increased, obtained bright photographic images, therefore detect defective 4 easily.
And then Fig. 6 representes and will be detected the example of the infrared ray 3 of institute's optically focused by circuit sensing type camera 6 through the infrared ray 3 of polycrystalline sheet 1 by cylindrical lens 8 optically focused.In the present example, cylindrical lens 8 is configured to make the infrared ray 3 of its length direction along wire, and the image of infrared ray 3 is amplified to the conveyance direction of polycrystalline sheet 1.
When utilizing lens 8 to amplify infrared ray 3 like this, detect by 6 pairs of infrared rays 3 of camera easily, even favourable aspect is that also can reduce erroneous detection or omission to moving continuously of polycrystalline sheet 1 surveys.In addition, like Fig. 1 and shown in Figure 2, light source 2 also can be introduced lens 8 in the example of single light source.
In addition, the concrete size and the configuration of optical system etc. are set at suitable numerical value according to the thickness of polycrystalline sheet 1, the wavelength domain of infrared ray 3, the irradiating angle of infrared ray 3 and the susceptibility of camera 6 etc.
Then, Fig. 7 representes light source 2 as ring-shaped light source, with the camera of camera 6 as domain type, and is baseline configuration example in different surface side with camera 6 with polycrystalline sheet 1 with light source 2.Ring-shaped light source 2 is configured to be concentric shape with the optical axis 7 of camera 6.The irradiation position P1 of light source 2 is maximum position as the light beam of the infrared ray 3 that light source 2 shone, and it forms the circular smaller circle than light source 2.
According to this example; Like Fig. 7, such shown in 8; Camera site (shooting area) P2 is in the sensing range of domain type camera 6, and it is positioned at the inboard of ring-shaped light source 2, promptly is positioned at from the inboard of irradiation position P1 to the little circle of the radius of the direction partition distance D of the optical axis 7 of camera 6.In addition, dispose as required camera 6 to the amplification of thing lens side with convex lens 8.In addition, irradiation position P1 also can be formed by the annulus.
According to the example of Fig. 7, get into the inside of polycrystalline sheet 1 from the infrared ray 3 of light source 2 from the irradiation position P1 of circle, through reflect repeatedly and reflect after the inboard of circular camera site P2 of arrival camera 6, take by domain type camera 6.
By ring-shaped light source 2, from all directions of camera 6 towards the irradiation position P1 of polycrystalline sheet 1 irradiation infrared ray 3, therefore, even, also can detect defective 4 when a certain direction is difficult to detect the defective 4 in the polycrystalline sheet 1.In addition,, can the examination scope (range of observation) of polycrystalline sheet 1 be set at the face bigger than wire examination scope, therefore improve checking efficiency through adopting domain type camera 6.
In addition, Fig. 9 representes ring-shaped light source 2 and domain type camera 6 are configured in the example of the identical face side of polycrystalline sheet 1.In this example, enter into the inside of polycrystalline sheet 1 from the infrared ray 3 of light source 2 from the irradiation position P1 of circle, through reflect repeatedly and reflect after arrive the inboard of circular camera site P2, take by domain type camera 6 again.
In addition, because of infrared ray 3 when the surface reflection of polycrystalline sheet 1 causes photographic images not distinct, also can the light shield 9 that cover usefulness be set on camera 6, so that the reflected light of infrared ray 3 can not be directly incident on the camera 6.In addition, in this example, irradiation position P1 also can be formed by the annulus.
Example according to Fig. 9; It is on the identical face of benchmark that irradiation position P1 is positioned at polycrystalline sheet 1 with camera site P2; And the part of the defective 4 in the polycrystalline sheet 1 is when having stronger reflection characteristic than other normal parts to infrared ray 3, can be effectively and easily detect its defective 4.And then, even be under the state on the face that irradiation position P1 or camera site P2 can't be set in polycrystalline sheet 1, also can detect defective 4.
Certainly, for the example among above-mentioned Fig. 1, Fig. 2, Fig. 5 and Fig. 6, linear light sources 2 also can be configured in so that the polycrystalline sheet is benchmark and camera 6 mutually on the face of the same side.
And then; As among Fig. 9 with double dot dash line institute illustration; Can utilize light conductors such as optical fiber, acrylic resin board as required, also can be with from least 1 end face of infrared ray 3 from four end faces (four sides) of polycrystalline sheet 1 of linear light sources 2 internal irradiation to polycrystalline sheet 1.
In this case; According to the example among Fig. 5, Fig. 6, Fig. 7 and Fig. 9; Even in the moving process of polycrystalline sheet 1; The front side end edge portion of the working direction of polycrystalline sheet 1 or the rear side end edge portion of working direction depart from from the part of a light source 2 or light source 2, if other parts of other light sources 2 or light source 2 not the end edge portion of the polycrystalline sheet 1 from move depart from, also can proceed the detection of defective 4.Therefore, also can carry out the detection of defective 4 to the end edge portion of polycrystalline sheet 1.
Above example is that infrared ray 3 is shone from the irradiation position P1 of vergence direction towards polycrystalline sheet 1.Therefore, through in the process of polycrystalline sheet 1, the chance of its refraction and reflection is more than the irradiation of vertical direction, thereby infrared ray 3 is not vulnerable to the influence of crystallization figure at infrared ray 3.But the direction of illumination of infrared ray 3 also can be set at the direction with respect to the irradiation position P1 approximate vertical of polycrystalline sheet 1.Even setting like this, infrared ray 3 also is reflected on the border of a plurality of crystallizations, and the also diffusion of the direction beyond vertical direction of infrared ray 3 therefore through the infrared ray 3 after this diffusion of shooting, can obtain the photographic images that not influenced by the crystallization figure.
In addition, above example is to make the irradiation position P1 of infrared ray 3 towards polycrystalline sheet 1, and shines with the state that tilts to point to camera site P2.Therefore, many infrared rays 3 via polycrystalline sheet 1 towards the camera site P2, therefore can guarantee required light quantity at camera site P2.But; Even infrared ray 3 via polycrystalline sheet 1 towards the camera site direction beyond the P2; Reflected, reflect and to irregular reference through inside, and the light quantity that can take appears in P2 in the camera site, therefore says from principle and can carry out the inspection of defective 4 at polycrystalline sheet 1.
If polycrystalline sheet 1 stops in the inspection position, then shooting condition is fine.On the other hand, make under the situation of Shutter speed priority, polycrystalline sheet 1 is moved continuously.In addition, the posture of polycrystalline sheet 1 can be not horizontal yet, and according to the inspection space, be set at vertical or heeling condition.
In addition, the present invention is not limited to silicon chip, also can be applicable to the wafer of other polycrystalline structures.
Specified the present invention with reference to specific embodiment, but under the situation that does not break away from the spirit and scope of the present invention, also can apply various changes or correction, this is conspicuous to those skilled in the art.
The application enrolls its content in this instructions as reference at this based on the Japanese patent application (spy is willing to 2009-130725) of application on May 29th, 2009 and the Japanese patent application (spy is willing to 2009-186304) of application on August 11st, 2009.
Utilizability in the industry
Inspection method according to polycrystalline sheet of the present invention; Can desalinate crystallization figure by crystallization direction, grain boundary and the wheel Guo generation thereof of polycrystalline sheet; Thereby can obtain clearly to discern the photographic images of the defective of existence, can be easily and carry out the detection of defective reliably.
Claims (7)
1. the inspection method of a polycrystalline sheet comprises:
Light source from disposing with the mode of optical axis through the irradiation position on the polycrystalline sheet shines ultrared operation to said irradiation position;
Use camera; To reflecting repeatedly with defective and reflect the operation that the infrared ray of the camera site ejaculation of back from the said polycrystalline sheet is taken from said irradiation position incident and by the inner grain boundary of said polycrystalline sheet; Wherein this camera site is to leave the position of preset distance from said irradiation position to the surface direction of said polycrystalline sheet, and this camera is used to take said camera site; And
On the photographic images that obtains by said camera, detect the operation of the defective in the said polycrystalline sheet according to the zero defect part and the luminance difference of defect part.
2. the inspection method of polycrystalline sheet according to claim 1 is characterized in that, said camera site is set on the surface of the opposite side of the face with being set with said irradiation position of said polycrystalline sheet.
3. the inspection method of polycrystalline sheet according to claim 1 is characterized in that, said camera site is set on the identical surface of the face with being set with said irradiation position of said polycrystalline sheet.
4. according to the inspection method of each described polycrystalline sheet in the claim 1～3, it is characterized in that,
Said light source is a single light source,
The mode of the optical axis of said light source to extend to said camera site side from said irradiation position is with respect to the surface tilt of said polycrystalline sheet.
5. according to the inspection method of each described polycrystalline sheet in the claim 1～3, it is characterized in that,
Said light source is with respect to said camera site a plurality of light sources of balanced configuration roughly,
The mode of the said optical axis of each said light source to extend to said camera site side from each said irradiation position is with the surface tilt of identical pitch angle with respect to said polycrystalline sheet.
6. according to the inspection method of each described polycrystalline sheet in the claim 1～5, it is characterized in that,
Said light source is a linear light sources,
Said camera is a circuit sensing type camera,
Said camera detects the infrared ray by cylindrical lens optically focused.
7. according to the inspection method of each described polycrystalline sheet in the claim 1～5, it is characterized in that,
Said light source is the ring-shaped light source that is formed with annular irradiation area,
Said camera is that the inboard with the said irradiation area of annular is the regional sensing type camera of shooting area,
Said camera is to being detected by the said infrared ray that amplifies with lens light gathering.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
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| JP2009-130725 | 2009-05-29 | ||
| JP2009130725 | 2009-05-29 | ||
| JP2009186304 | 2009-08-11 | ||
| JP2009-186304 | 2009-08-11 | ||
| PCT/JP2010/057094 WO2010137431A1 (en) | 2009-05-29 | 2010-04-21 | Polycrystalline wafer inspection method |
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| Publication Number | Publication Date |
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| CN102422149A true CN102422149A (en) | 2012-04-18 |
| CN102422149B CN102422149B (en) | 2014-03-19 |
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| CN201080020208.XA Expired - Fee Related CN102422149B (en) | 2009-05-29 | 2010-04-21 | Polycrystalline wafer inspection method |
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| JP (1) | JP5559163B2 (en) |
| KR (1) | KR101323035B1 (en) |
| CN (1) | CN102422149B (en) |
| TW (1) | TWI468674B (en) |
| WO (1) | WO2010137431A1 (en) |
Cited By (8)
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| CN102680102A (en) * | 2012-04-28 | 2012-09-19 | 江南大学 | Automatic detection method of solar silicon chip colors based on machine vision |
| CN105738379A (en) * | 2014-12-12 | 2016-07-06 | 上海和辉光电有限公司 | Detection apparatus and detection method for polysilicon thin film |
| CN107369740A (en) * | 2017-07-17 | 2017-11-21 | 苏州天准科技股份有限公司 | It is a kind of to be used to detect the hidden optical detection apparatus split of solar silicon wafers and detection method |
| CN107907549A (en) * | 2017-11-13 | 2018-04-13 | 武汉华星光电半导体显示技术有限公司 | Inspecting substrate equipment and substrate inspecting method |
| CN109765183A (en) * | 2019-03-28 | 2019-05-17 | 青岛海鼎通讯技术有限公司 | A kind of Mobile phone screen detection device and its application method |
| CN112639451A (en) * | 2018-08-09 | 2021-04-09 | 胜高股份有限公司 | Wafer inspection method and inspection apparatus |
| CN116913797A (en) * | 2023-07-14 | 2023-10-20 | 无锡九霄科技有限公司 | Wafer bonding quality detection device |
| CN112639451B (en) * | 2018-08-09 | 2024-04-30 | 胜高股份有限公司 | Wafer inspection method and inspection device |
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| JP2014190797A (en) * | 2013-03-27 | 2014-10-06 | Tokushima Densei Kk | Defect inspection device for silicon wafer |
| TWI557407B (en) * | 2014-03-05 | 2016-11-11 | 晶元光電股份有限公司 | Method of chip inspection |
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| CN112639451B (en) * | 2018-08-09 | 2024-04-30 | 胜高股份有限公司 | Wafer inspection method and inspection device |
| CN109765183A (en) * | 2019-03-28 | 2019-05-17 | 青岛海鼎通讯技术有限公司 | A kind of Mobile phone screen detection device and its application method |
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Also Published As
| Publication number | Publication date |
|---|---|
| JP5559163B2 (en) | 2014-07-23 |
| CN102422149B (en) | 2014-03-19 |
| TWI468674B (en) | 2015-01-11 |
| WO2010137431A1 (en) | 2010-12-02 |
| KR20120022993A (en) | 2012-03-12 |
| KR101323035B1 (en) | 2013-10-29 |
| JPWO2010137431A1 (en) | 2012-11-12 |
| TW201100788A (en) | 2011-01-01 |
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