CN102412185B - 降低射频ldmos器件中源端接触柱电阻的方法 - Google Patents
降低射频ldmos器件中源端接触柱电阻的方法 Download PDFInfo
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CN106435721A (zh) * | 2016-09-22 | 2017-02-22 | 东莞市联洲知识产权运营管理有限公司 | 一种GaAs/Si外延材料制备方法 |
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CN1469433A (zh) * | 2002-07-11 | 2004-01-21 | ������������ʽ���� | 在硅基片上制造Si1-xGex膜的方法 |
CN1623234A (zh) * | 2002-03-28 | 2005-06-01 | 先进微装置公司 | 于沟道区域中具有退化掺杂分布的半导体组件及用于制造该半导体组件的方法 |
CN101459130A (zh) * | 2007-12-14 | 2009-06-17 | 上海华虹Nec电子有限公司 | BiCMOS工艺中寄生垂直PNP及制备方法 |
CN101652835A (zh) * | 2007-04-20 | 2010-02-17 | 佳能安内华股份有限公司 | 具有碳化硅基板的半导体器件的退火方法和半导体器件 |
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JPH02302024A (ja) * | 1989-05-16 | 1990-12-14 | Sanyo Electric Co Ltd | 固相エピタキシャル成長方法 |
US6992025B2 (en) * | 2004-01-12 | 2006-01-31 | Sharp Laboratories Of America, Inc. | Strained silicon on insulator from film transfer and relaxation by hydrogen implantation |
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CN1623234A (zh) * | 2002-03-28 | 2005-06-01 | 先进微装置公司 | 于沟道区域中具有退化掺杂分布的半导体组件及用于制造该半导体组件的方法 |
CN1469433A (zh) * | 2002-07-11 | 2004-01-21 | ������������ʽ���� | 在硅基片上制造Si1-xGex膜的方法 |
CN101652835A (zh) * | 2007-04-20 | 2010-02-17 | 佳能安内华股份有限公司 | 具有碳化硅基板的半导体器件的退火方法和半导体器件 |
CN101459130A (zh) * | 2007-12-14 | 2009-06-17 | 上海华虹Nec电子有限公司 | BiCMOS工艺中寄生垂直PNP及制备方法 |
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