CN102403329B - 一种低温多晶硅薄膜晶体管探测器及其制备方法 - Google Patents
一种低温多晶硅薄膜晶体管探测器及其制备方法 Download PDFInfo
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CN102403329A CN102403329A (zh) | 2012-04-04 |
CN102403329B true CN102403329B (zh) | 2014-12-17 |
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CN102790062B (zh) * | 2012-07-26 | 2016-01-27 | 北京京东方光电科技有限公司 | 一种传感器的制造方法 |
TWI573257B (zh) * | 2014-06-27 | 2017-03-01 | 友達光電股份有限公司 | 感測裝置 |
CN110391308B (zh) * | 2019-09-19 | 2019-12-27 | 南京迪钛飞光电科技有限公司 | 一种平板探测器及其制造方法 |
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CN202339920U (zh) * | 2011-11-01 | 2012-07-18 | 上海奕瑞影像科技有限公司 | 一种低温多晶硅薄膜晶体管探测器 |
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JP2002148342A (ja) * | 2000-11-07 | 2002-05-22 | Canon Inc | 放射線撮像装置 |
TW540128B (en) * | 2002-07-12 | 2003-07-01 | Hannstar Display Corp | Manufacturing method of X-ray detector array |
US8058675B2 (en) * | 2006-12-27 | 2011-11-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device using the same |
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CN202339920U (zh) * | 2011-11-01 | 2012-07-18 | 上海奕瑞影像科技有限公司 | 一种低温多晶硅薄膜晶体管探测器 |
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Owner name: SHANGHAI YIRUI OPTOELECTRONICS TECHNOLOGY CO., LTD Free format text: FORMER OWNER: SHANGHAI IRAY TECHNOLOGY LIMITED Effective date: 20140326 |
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Effective date of registration: 20140326 Address after: 201201 Shanghai City, Pudong New Area Zhangjiang hi tech Industrial District Ruiqinglu No. 590 9 2 storey 202 room Applicant after: Shanghai Yirui Optoelectronics Technology Co., Ltd. Address before: 201201 Shanghai City, Pudong New Area Zhangjiang hi tech Industrial District Ruiqinglu No. 590 9 2 storey 202 room Applicant before: Iray Technology (Shanghai) Ltd. |
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Address after: 201201 Shanghai City, Pudong New Area Zhangjiang hi tech Industrial District Ruiqinglu No. 590 9 2 storey 202 room Patentee after: Shanghai Yi Ruiguang electronic Polytron Technologies Inc Address before: 201201 Shanghai City, Pudong New Area Zhangjiang hi tech Industrial District Ruiqinglu No. 590 9 2 storey 202 room Patentee before: Shanghai Yirui Optoelectronics Technology Co., Ltd. |