CN102400215A - Variable heat exchange device of polycrystal silicon ingot furnace and control method thereof - Google Patents
Variable heat exchange device of polycrystal silicon ingot furnace and control method thereof Download PDFInfo
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- CN102400215A CN102400215A CN2011103507230A CN201110350723A CN102400215A CN 102400215 A CN102400215 A CN 102400215A CN 2011103507230 A CN2011103507230 A CN 2011103507230A CN 201110350723 A CN201110350723 A CN 201110350723A CN 102400215 A CN102400215 A CN 102400215A
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Abstract
The invention discloses a variable heat exchange device of a polycrystal silicon ingot furnace. A heat exchange table made of graphite is arranged at the lower part of a ceramic crucible, the heat exchange table is provided with a plurality of vertical downward square heat dissipation holes arranged in a matrix, a supporting plate is arranged at the lower part of the heat exchange table, heat preservation plugs are arranged between the heat exchange table and the supporting plate, the heat preservation plugs are made of heat preservation carbon felt, the heat preservation plugs have pyramid structures with small bottoms and big tops, the biggest positions of the bottoms of the heat preservation plugs are just consistent with the sizes of the square heat dissipation holes, the number and the position arrangement of the heat preservation plugs correspond to those of the square heat dissipation holes, the supporting plate is fixed on a lifting rod, and the lifting rod passes through a bottom heat insulation plate from the outer part and extends into the inner part. According to the variable heat exchange device of the polycrystal silicon ingot furnace and the control method thereof, the variable heat exchange device is used in a thermal field, and the lifting rod drives the supporting plate and the heat preservation plugs to move up and down together, so that the heat dissipation capability of the heat dissipation holes is adjusted, the heat dissipation rate below the crystal can be actively controlled, and the growth rate of the crystal is effectively controlled.
Description
Technical field
The present invention relates to polycrystalline silicon ingot or purifying furnace thermal field field, especially a kind of variable heat exchanger and control method thereof of polycrystalline silicon ingot or purifying furnace.
Background technology
Polycrystalline silicon ingot or purifying furnace thermal field structure commonly used at present is as shown in Figure 1; Heat insulation tube in fixed top thermal baffle, Liftable type side and fixed bottom thermal baffle by heat preservation carbon felt is processed are formed heat-insulation cage; The heat exchange platform is put on the column in the heat-insulation cage, and the bottom of filling the ceramic crucible of silicon material reaches all around to be protected with the graphite backplate.In the silicon material fusion stage, the heat insulation tube in side is reduced to zero-bit, heat-insulation cage complete closed; Through well heater the silicon material in the crucible is heated until the silicon material and to melt fully; Get into crystal growth phase then,, heat is flowed out from the heat-insulation cage bottom through promoting the heat insulation tube of side; Thereby reduce the thermal field bottom temp, obtain the required thermograde that raises from bottom to top of crystal growth.The weak point of this heat exchange method is: the heat exchange platform is a solid graphite body; Thickness usually at 120mm between the 160mm; Its heat-exchange capacity is very low, and is again passive, immutable, needs dispersed heat mainly to pass through sidewall of crucible all around and graphite backplate to external diffusion during crystal growth; This will cause near around the speed that reduces of the silicon melt temperature of crucible much larger than the silicon melt of crucible bottom; Make that the isothermal surface in the crucible can't the maintenance level, crystal can't be vertically by going up crystallization down, and crystal mass is poor; In addition, this heat exchange method the crystal growth later stage usually because of heat-exchange capacity is lower, can't provide crystal growth required enough thermogrades, cause the speed of crystal growth significantly to reduce.So there is defective in present ingot furnace thermal field structure, cause crystal mass and production efficiency low.
Summary of the invention
The objective of the invention is provides a kind of heat-exchange capacity strong for the deficiency that solves above-mentioned technology, the variable heat exchanger and the control method thereof of the polycrystalline silicon ingot or purifying furnace that can enhance productivity.
In order to achieve the above object, the variable heat exchanger of the polycrystalline silicon ingot or purifying furnace that the present invention designed, it mainly comprises the heat-insulation cage of being made up of top thermal baffle, the heat insulation tube in side and bottom thermal baffle; And inner well heater, graphite backplate and ceramic crucible, being provided with in the ceramic crucible bottom is the heat exchange platform of graphite body, on the heat exchange platform, is provided with the downward square louvre of plurality of vertical through arranged; Be provided with back up pad in heat exchange platform bottom; Between heat exchange platform and back up pad, be provided with the insulation plug, it is heat preservation carbon felt that material is filled in insulation, and the insulation plug is for going up little pyramid structure down greatly; Lucky and the square louvre consistent size of bottom maximum; The number of insulation plug is corresponding with square louvre with positional alignment, and back up pad is fixed on the elevating lever, and elevating lever passes the bottom thermal baffle and stretches into inside from the outside.
The control method of the variable heat exchanger of polycrystalline silicon ingot or purifying furnace when the silicon material melts, lets insulation move to most significant digit beyond the Great Wall, is full of louvre, rises and strengthens insulation effect; The crystal growth initial stage moves down the insulation plug, and louvre begins heat radiation, and the ceramic crucible bottom temp reduces rapidly, forms enough condensate depression, and nucleus is able to form in order rapidly; At crystallisation stage, the insulation plug continues to move down, and the thermolysis of louvre is constantly strengthened; Guarantee that the top silicon melt is in the hot-zone, the lower junction crystal is in the cold-zone, and this thermograde is that crystal growth provides powerful motivating force; And can fill in the speed that moves down through the adjustment insulation, realize effective control, and then realize the controllability of crystalline growth velocity thermograde; Thermolysis through louvre; Make the interior upper chamber of heat-insulation cage heat edge vertical direction from top to bottom spread, guaranteed the horizontality of solid-liquid interface, this is very beneficial for the lasting complete growth of silicon ingot; When crystallization finished to get into annealing stage, insulation moved to most significant digit beyond the Great Wall, stops the thermolysis of louvre, guaranteed that temperature is even in the cage, prevented that stress from producing.
The variable heat exchanger and the control method thereof of the resulting polycrystalline silicon ingot or purifying furnace of the present invention; Through in thermal field, using a kind of variable heat exchanger; And drive back up pad through elevating lever and move up and down together with the insulation plug; Regulate the heat-sinking capability of louvre, rate of heat release that can ACTIVE CONTROL crystal below is effectively controlled crystal growth rate.This device can be used for the casting growing polycrystalline silicon ingot, is used to control the thermal exchange speed of crystal below; This device also can be used for casting growth type silicon single crystal ingot, when casting growth class silicon single crystal ingot, gets into the fusing later stage; Move down the insulation plug a little; Louvre performance heat sinking function, the control crucible bottom is in suitable temperature, can play the young brilliant not exclusively effect of fusing of protection crucible bottom.
Description of drawings
Fig. 1 is the structural representation of the ingot furnace thermal field of typical prior art;
Fig. 2 is a structural representation of the present invention;
Fig. 3 is the perspective view of heat exchange platform of the present invention;
Fig. 4 is the perspective view of insulation plug of the present invention and back up pad.
Embodiment
Combine accompanying drawing that the present invention is done further description through embodiment below.
Embodiment 1:
As shown in Figure 2, the variable heat exchanger of the polycrystalline silicon ingot or purifying furnace that present embodiment is described, it mainly comprises the heat-insulation cage of being made up of top thermal baffle 1, the heat insulation tube 2 in side and bottom thermal baffle 3; And inner well heater 4, graphite backplate 5 and ceramic crucible 6, be provided with in ceramic crucible 6 bottoms and be the heat exchange platform 7 of graphite body, as shown in Figure 3; On heat exchange platform 7, be provided with the downward square louvre 11 of plurality of vertical through arranged; Be provided with back up pad 9 in heat exchange platform 7 bottoms, between heat exchange platform 7 and back up pad 9, be provided with insulation plug 8, insulation plug 8 materials are heat preservation carbon felts; As shown in Figure 4; Insulation plug 8 little pyramid structure for big down, the bottom maximum just with square louvre 11 consistent size, the number of insulation plug 8 and positional alignment are corresponding with square louvre 11; Back up pad 9 is fixed on the elevating lever 10, and elevating lever 10 passes bottom thermal baffle 3 and stretches into inside from the outside.
The control method of the variable heat exchanger of polycrystalline silicon ingot or purifying furnace when the silicon material melts, lets insulation fill on 8 and moves to most significant digit, is full of louvre 11, rises and strengthens insulation effect; The crystal growth initial stage moves down insulation plug 8, and louvre 11 begins heat radiation, and ceramic crucible 6 bottom temps reduce rapidly, form enough condensate depression, and nucleus is able to form in order rapidly; At crystallisation stage, insulation plug 8 continues to move down, and the thermolysis of louvre 11 is constantly strengthened; Guarantee that the top silicon melt is in the hot-zone, the lower junction crystal is in the cold-zone, and this thermograde is that crystal growth provides powerful motivating force; And can be incubated the speed that plug 8 moves down through adjustment, realize effective control, and then realize the controllability of crystalline growth velocity thermograde; Thermolysis through louvre 11; Make the interior upper chamber of heat-insulation cage heat edge vertical direction from top to bottom spread, guaranteed the horizontality of solid-liquid interface, this is very beneficial for the lasting complete growth of silicon ingot; When crystallization finishes to get into annealing stage, move to most significant digit on the insulation plug 8, stop the thermolysis of louvre 11, guarantee that temperature is even in the cage, prevent that stress from producing.
Embodiment 2:
The casting growing polycrystalline silicon ingot, during the fusing of silicon material, elevating lever 10 drives on the insulation plug 8 through back up pad 9 and moves to most significant digit, is full of louvre 11, rises and strengthens insulation effect.The crystal growth initial stage moves down insulation plug 8, and louvre 11 begins heat radiation, and the crucible bottom temperature reduces rapidly, forms enough condensate depression, and nucleus is able to form in order rapidly.At crystallisation stage, insulation plug 8 continues to move down, and the thermolysis of louvre 11 is constantly strengthened, and guarantees that the top silicon melt is in the hot-zone, and the lower junction crystal is in the cold-zone, and this thermograde is that crystal growth provides powerful motivating force.And can be incubated the speed that plug 8 moves down through adjustment, realize effective control, and then realize the controllability of crystalline growth velocity thermograde.The thermolysis of louvre 11 also can make the interior upper chamber of heat-insulation cage heat edge vertical direction from top to bottom spread, and has guaranteed the horizontality of solid-liquid interface, and this is very beneficial for the lasting complete growth of silicon ingot.When crystallization finishes to get into annealing stage, move to most significant digit on the insulation plug 8, stop the thermolysis of louvre 11, guarantee that temperature is even in the cage, prevent that stress from producing.
Embodiment 3:
Casting growth type silicon single crystal ingot in the early stage of silicon material fusing, lets insulation fill on 8 and moves to most significant digit; Be full of louvre 11, play the reinforcement insulation effect, get into the fusing later stage; Move down insulation plug 8 a little; Louvre 11 performance heat sinking functions, the control crucible bottom is in proper temperature, plays the young brilliant unlikely effect of fusing fully of protection.Get into crystallization nucleation during the stage, continue to move down insulation plug 8, louvre 11 thermolysis are strengthened, and the crucible bottom temperature reduces rapidly, forms enough condensate depression, make silicon melt induce down upwards growth at the young crystalline substance that does not melt fully.At crystallisation stage, insulation plug 8 continues to move down, and the thermolysis of louvre 11 is constantly strengthened, and guarantees that the top silicon melt is in the hot-zone, and the lower junction crystal is in the cold-zone, and this thermograde is that crystal growth provides powerful motivating force.And can be incubated the speed that plug 8 moves down through adjustment, realize effective control, guarantee the quick, constant of crystal growth rate thermograde.The thermolysis of louvre 11 also can make the interior upper chamber of heat-insulation cage heat edge vertical direction from top to bottom spread, and has guaranteed the horizontality of solid-liquid interface, and this is very beneficial for the lasting complete growth of silicon single crystal ingot.When crystallization finishes to get into annealing stage, move to most significant digit on the insulation plug 8, stop the thermolysis of louvre 11, guarantee that temperature is even in the cage, prevent that stress from producing.
Claims (2)
1. the variable heat exchanger of a polycrystalline silicon ingot or purifying furnace, it mainly comprises the heat-insulation cage of being made up of top thermal baffle, the heat insulation tube in side and bottom thermal baffle, and well heater, graphite backplate and the ceramic crucible of inside; It is characterized in that being provided with in the ceramic crucible bottom is the heat exchange platform of graphite body; On the heat exchange platform, be provided with the downward square louvre of plurality of vertical, be provided with back up pad, between heat exchange platform and back up pad, be provided with the insulation plug in heat exchange platform bottom through arranged; Insulation plug material is a heat preservation carbon felt; It is the big down little pyramid structure that insulation is filled in, the lucky and square louvre consistent size of bottom maximum, and the number of insulation plug is corresponding with square louvre with positional alignment; Back up pad is fixed on the elevating lever, and elevating lever passes the bottom thermal baffle and stretches into inside from the outside.
2. the control method of the variable heat exchanger of a polycrystalline silicon ingot or purifying furnace is characterized in that when the silicon material melts, and lets insulation move to most significant digit beyond the Great Wall, is full of louvre, rises and strengthens insulation effect; The crystal growth initial stage moves down the insulation plug, and louvre begins heat radiation, and the ceramic crucible bottom temp reduces rapidly, forms enough condensate depression, and nucleus is able to form in order rapidly; At crystallisation stage, the insulation plug continues to move down, and the thermolysis of louvre is constantly strengthened, and guarantees that the top silicon melt is in the hot-zone, and the lower junction crystal is in the cold-zone, and this thermograde is that crystal growth provides powerful motivating force; When crystallization finished to get into annealing stage, insulation moved to most significant digit beyond the Great Wall, stops the thermolysis of louvre, guaranteed that temperature is even in the cage, prevented that stress from producing.
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102747420A (en) * | 2012-07-31 | 2012-10-24 | 常州天合光能有限公司 | Heat exchange table for polycrystalline ingot furnace and ventilation pipe diameter variation method of heat exchange table |
| CN102912417A (en) * | 2012-11-14 | 2013-02-06 | 田志恒 | Solid liquid interface detector for polysilicon ingot furnace |
| CN103628125A (en) * | 2012-08-21 | 2014-03-12 | 浙江昱辉阳光能源有限公司 | Polysilicon ingot furnace and polysilicon ingot casting method |
| CN104328492A (en) * | 2014-11-27 | 2015-02-04 | 吕铁铮 | Device for moving small insulating plate at bottom of polycrystalline silicon ingot furnace and polycrystalline silicon ingot furnace |
| CN104451874A (en) * | 2014-11-20 | 2015-03-25 | 英利集团有限公司 | Preparation method of ingot furnace and silicon ingot |
| CN109576786A (en) * | 2018-12-31 | 2019-04-05 | 霍焕金 | The cooling system and method for one type monocrystalline silicon cast ingot furnace |
| CN111394790A (en) * | 2020-04-26 | 2020-07-10 | 新余学院 | Low-impurity polycrystalline silicon ingot furnace |
| CN112383843A (en) * | 2020-11-20 | 2021-02-19 | 浙江工业大学 | Network information technology data exchange device |
| CN113552022A (en) * | 2021-07-12 | 2021-10-26 | 超威电源集团有限公司 | Lead alloy fluidity detection device and method |
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| CN102021644A (en) * | 2010-12-27 | 2011-04-20 | 绍兴县精功机电研究所有限公司 | Crystal silicon ingot casting furnace thermal field thermal door control device |
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| JP2002193610A (en) * | 2000-12-26 | 2002-07-10 | Mitsubishi Materials Corp | Apparatus for producing crystal silicon |
| CN101775642A (en) * | 2010-03-04 | 2010-07-14 | 北京中联阳光科技有限公司 | Combined resistance heater and energy-saving heat field design for polycrystalline silicon ingot or purifying furnace |
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Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102747420B (en) * | 2012-07-31 | 2014-12-31 | 常州天合光能有限公司 | Heat exchange table for polycrystalline ingot furnace and ventilation pipe diameter variation method of heat exchange table |
| CN102747420A (en) * | 2012-07-31 | 2012-10-24 | 常州天合光能有限公司 | Heat exchange table for polycrystalline ingot furnace and ventilation pipe diameter variation method of heat exchange table |
| CN103628125A (en) * | 2012-08-21 | 2014-03-12 | 浙江昱辉阳光能源有限公司 | Polysilicon ingot furnace and polysilicon ingot casting method |
| CN102912417B (en) * | 2012-11-14 | 2016-03-30 | 田志恒 | Solid liquid interface detector for polysilicon ingot furnace |
| CN102912417A (en) * | 2012-11-14 | 2013-02-06 | 田志恒 | Solid liquid interface detector for polysilicon ingot furnace |
| CN104451874A (en) * | 2014-11-20 | 2015-03-25 | 英利集团有限公司 | Preparation method of ingot furnace and silicon ingot |
| CN104451874B (en) * | 2014-11-20 | 2017-09-12 | 英利集团有限公司 | The preparation method of ingot furnace and silicon ingot |
| CN104328492A (en) * | 2014-11-27 | 2015-02-04 | 吕铁铮 | Device for moving small insulating plate at bottom of polycrystalline silicon ingot furnace and polycrystalline silicon ingot furnace |
| WO2016082525A1 (en) * | 2014-11-27 | 2016-06-02 | 吕铁铮 | Device for moving small heat insulating plate at bottom of polycrystalline silicon ingot furnace and polycrystalline silicon ingot furnace |
| CN109576786A (en) * | 2018-12-31 | 2019-04-05 | 霍焕金 | The cooling system and method for one type monocrystalline silicon cast ingot furnace |
| CN111394790A (en) * | 2020-04-26 | 2020-07-10 | 新余学院 | Low-impurity polycrystalline silicon ingot furnace |
| CN112383843A (en) * | 2020-11-20 | 2021-02-19 | 浙江工业大学 | Network information technology data exchange device |
| CN112383843B (en) * | 2020-11-20 | 2024-04-23 | 浙江工业大学 | Network information technology data exchange device |
| CN113552022A (en) * | 2021-07-12 | 2021-10-26 | 超威电源集团有限公司 | Lead alloy fluidity detection device and method |
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