CN102912417B - Solid liquid interface detector for polysilicon ingot furnace - Google Patents

Solid liquid interface detector for polysilicon ingot furnace Download PDF

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CN102912417B
CN102912417B CN201210457753.6A CN201210457753A CN102912417B CN 102912417 B CN102912417 B CN 102912417B CN 201210457753 A CN201210457753 A CN 201210457753A CN 102912417 B CN102912417 B CN 102912417B
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liquid interface
coil
skeleton
wire
solid
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CN102912417A (en
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田志恒
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F23/00—Indicating or measuring liquid level or level of fluent solid material, e.g. indicating in terms of volume or indicating by means of an alarm
    • G01F23/22—Indicating or measuring liquid level or level of fluent solid material, e.g. indicating in terms of volume or indicating by means of an alarm by measuring physical variables, other than linear dimensions, pressure or weight, dependent on the level to be measured, e.g. by difference of heat transfer of steam or water
    • G01F23/26—Indicating or measuring liquid level or level of fluent solid material, e.g. indicating in terms of volume or indicating by means of an alarm by measuring physical variables, other than linear dimensions, pressure or weight, dependent on the level to be measured, e.g. by difference of heat transfer of steam or water by measuring variations of capacity or inductance of capacitors or inductors arising from the presence of liquid or fluent solid material in the electric or electromagnetic fields
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/006—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electromagnetism (AREA)
  • Power Engineering (AREA)
  • Thermal Sciences (AREA)
  • Fluid Mechanics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)

Abstract

The invention provides a kind of Solid liquid interface detector for polysilicon ingot furnace, comprising: eddy current sensor, for measuring the solid-liquid interface of crucible inside, obtaining the electrical signal about solid-liquid interface height; Signal processor, is electrically connected with eddy current sensor, for being drawn the height value of solid-liquid interface by electrical signal.Applying technical scheme of the present invention, by arranging eddy current sensor, the height of polysilicon solid-liquid interface can be detected online real-time and accurately, thus control the long brilliant opportunity of polysilicon, improve the quality of silicon ingot, reduce the waste to seed crystal, reduce the production cost of silicon ingot.

Description

Solid liquid interface detector for polysilicon ingot furnace
Technical field
The present invention relates to equipment in polycrystalline silicon ingot or purifying furnace, in particular to a kind of Solid liquid interface detector for polysilicon ingot furnace.
Background technology
Polycrystalline silicon ingot or purifying furnace is one of of paramount importance equipment in solar photovoltaic industry.It becomes by refining the high purity silicon melting adjustment obtained the material being suitable for manufacturing solar cell, and adopt directional long crystal solidification technology that silicon raw materials melt is made silicon ingot, silicon ingot is cut into silicon chip for solar cell by operation more afterwards.Polycrystalline silicon ingot or purifying furnace produces the main production of polysilicon to be had: the silicon raw material (abbreviation seed crystal) of high purity fine particle is laid in the bottom in crucible, then the thick silicon raw material of lay thereon; Next carry out preheating (surrounding of crucible and be provided with movable zone of heating above) and make thick silicon melting sources, treat that the whole melting of thick silicon raw material is liquid silicon and seed crystal not all before fusing, starting cooling enters crystallisation stage; When starting crystallization, the crucible that molten silicon material is housed is motionless, is slowly moved up by zone of heating, and the heat of crucible bottom is distributed by the space between zone of heating and thermofin, reduces the temperature of crucible directional solidification block gradually.In the process, the crystal of crystallization slowly grows, and the silicon liquid of melting is thinning gradually.In crystallisation process, solid-liquid interface forms the more stable thermograde being conducive to crystal growth like this, and solid-liquid interface upwards raises gradually from crucible bottom and forms the silicon ingot of crystallographic orientation simultaneously.
Between fusing latter stage and crystallization initial stage, exist as next contradiction: even remaining just starting crystallization can cause yielding poorly of effective silicon ingot and the waste to seed crystal to seed crystal too much, if seed crystal is all melted start crystallization again, the Ingot quality produced is poor, is cut into the cell photoelectric efficiency of conversion that silicon chip makes low with this silicon ingot.But, because temperature in polycrystalline silicon ingot or purifying furnace high (about 1400 DEG C), thermal field control tight, also not having now a feasible proofing unit can detect solid-liquid interface real-time and accurately, making seed crystal close to just being started crystallization by during complete melting.At present, the height of solid-liquid interface and when crystallization is all judged by artificial experience, this cause Ingot quality difference and production cost high.
Summary of the invention
The present invention aims to provide a kind of Solid liquid interface detector for polysilicon ingot furnace, to solve the problem that the finished product silicon ingot caused by artificial judgment the position of solid-liquid interface in prior art is of poor quality and production cost is high.
To achieve these goals, the invention provides a kind of Solid liquid interface detector for polysilicon ingot furnace, comprising: eddy current sensor, for measuring the solid-liquid interface of crucible inside, obtaining the electrical signal about solid-liquid interface height; Signal processor, is electrically connected with eddy current sensor, for being drawn the height value of solid-liquid interface by electrical signal.
Further, eddy current sensor is arranged on the bottom of the crucible in polycrystalline silicon ingot or purifying furnace.
Further, the eddy current sensor coil that comprises the skeleton in shell, shell and be wrapped on skeleton; Coil comprises transmitting coil and the compensation coil of concentric co-axial layout and axially has interval and coaxially arranged receiving coil with transmitting coil and compensation coil; Wherein, the wire of transmitting coil, compensation coil and receiving coil is arranged in the wire casing of skeleton.
Further, skeleton comprises concentric co-axial and the inner framework of arranging successively from inside to outside, middle level skeleton and outer skeleton, the wire of transmitting coil is wound in the wire casing of outer skeleton, the wire of compensation coil is wound in the wire casing of middle level skeleton or inner framework, and the wire of receiving coil is wound in the wire casing of inner framework, middle level skeleton and outer skeleton.
Further, skeleton comprises concentric co-axial and the inner framework of arranging successively from inside to outside, middle level skeleton and outer skeleton, the wire of transmitting coil is wound in the wire casing of outer skeleton and middle level skeleton, the wire of compensation coil is wound in the wire casing of inner framework, and the wire of receiving coil is wound in the wire casing of inner framework, middle level skeleton and outer skeleton.
Further, the coiling direction of the wire of transmitting coil and compensation coil is contrary.
Further, the cross-sectional shape of wire casing is arc or U-shaped.
Further, eddy current sensor is from the bottom up successively through the oriented solidified blocks of crucible and the graphite protective shield of crucible.
Further, also comprise the electric panel room be positioned at outside polycrystalline silicon ingot or purifying furnace, signal processor is arranged in electric panel room, and eddy current sensor is connected by signal cable with signal processor.
Applying technical scheme of the present invention, by arranging eddy current sensor, the height of polysilicon solid-liquid interface can be detected online real-time and accurately, thus control the long brilliant opportunity of polysilicon, improve the quality of silicon ingot, reduce the waste to seed crystal, reduce the production cost of silicon ingot.
Accompanying drawing explanation
The Figure of description forming a application's part is used to provide a further understanding of the present invention, and schematic description and description of the present invention, for explaining the present invention, does not form inappropriate limitation of the present invention.In the accompanying drawings:
Fig. 1 shows the schematic diagram of the Solid liquid interface detector for polysilicon ingot furnace of one embodiment of the invention; And
Fig. 2 shows the schematic diagram of the eddy current sensor in one embodiment of the invention; And;
Fig. 3 shows the close-up schematic view at A place in Fig. 2.
Embodiment
It should be noted that, when not conflicting, the embodiment in the application and the feature in embodiment can combine mutually.Below with reference to the accompanying drawings and describe the present invention in detail in conjunction with the embodiments.
As shown in Figure 1 to Figure 3, zone of heating 2 is arranged on the upper part of polycrystalline silicon ingot or purifying furnace 1, and the oriented solidified blocks 6 of carrying crucible 5 is arranged on the lower part of polycrystalline silicon ingot or purifying furnace 1, and the surrounding of crucible 5 is provided with graphite protective shield 4 for support crucible 5.A small amount of seed crystal 3b is laid in the bottom in crucible 5, then the completely thick silicon raw material 3a of top lay.Eddy current sensor 7 for detecting polysilicon solid-liquid interface is arranged on the bottom of crucible 5 in polycrystalline silicon ingot or purifying furnace.Solid-state and the liquid specific conductivity of polysilicon differs greatly, and by arranging eddy current sensor 7, the height of polysilicon solid-liquid interface can be detected.
Preferably, aperture is offered at oriented solidified blocks 6 and graphite protective shield 4, eddy current sensor 7 is arranged on the bottom of crucible 5 in polycrystalline silicon ingot or purifying furnace from the bottom up successively through the foraminate oriented solidified blocks 6 of band and graphite protective shield 4, the setting of aperture decreases the obstruction of eddy current sensor 7 to polysilicon solid-liquid interface, is conducive to the sensitivity improving eddy current sensor 7.Signal processor 9 is arranged in the electric panel room outside polycrystalline silicon ingot or purifying furnace 1, and eddy current sensor 7 is connected by signal cable 8 with signal processor 9.
Shown in Fig. 2 and Fig. 3, eddy current sensor 7 comprises shell 7c, skeleton and coil, the transmitting coil 7a2 that this coil is arranged by concentric co-axial and compensation coil 7a3 and forming with the spaced apart coaxially arranged receiving coil 7a1 of transmitting coil 7a2 and compensation coil 7a3, wherein transmitting coil 7a2, compensation coil 7a3 and receiving coil 7a1 are wound in the wire casing of skeleton by naked cable.
Preferably, eddy current sensor skeleton comprises inner framework, middle level skeleton and the outer skeleton that concentric co-axial is arranged, transmitting coil 7a2 is wound in the wire casing of outer skeleton 7b1 by naked cable, and compensation coil 7a3 is wound in the wire casing of middle level skeleton 7b2 and receiving coil 7a1 is wound in the wire casing of each layer skeleton by naked cable.Alternatively, transmitting coil 7a2 is wound in the wire casing of outer skeleton 7b1, middle level skeleton 7b2 by naked cable, and compensation coil 7a3 is wound in the wire casing of inner framework 7b3 by naked cable, and receiving coil 7a1 is wound in the wire casing of each layer skeleton by naked cable.
Preferably, the cross-sectional shape of wire casing is arc or U-shaped, is conducive to arranging the more coil thickness of skeleton between thinning every layer line circle simultaneously in limited space, reduces the obstruction between every layer line circle further, improve the ability of induction coil.
As can be seen from the above description, the above embodiments of the present invention achieve following technique effect:
1, the height of polysilicon solid-liquid interface can be detected online real-time and accurately, control the long brilliant opportunity of polysilicon, improve the quality of silicon ingot, reduce the waste to seed crystal, reduce the production cost of silicon ingot.
2, the receiving coil for the eddy current sensor detecting polysilicon solid-liquid interface is wound in the wire casing of inner framework, middle level skeleton and outer skeleton, increases the ability that receiving coil is received in inducing eddy-current in liquid-state silicon and solid state si; Compensation coil arranges with transmitting coil concentric co-axial and coiling direction is contrary, and compensation coil compensate for magnetizing current reasons for its use signal in receiving coil of transmitting coil, improves sensitivity and ranging that namely signal to noise ratio improves solid-liquid interface detection.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.

Claims (7)

1. a Solid liquid interface detector for polysilicon ingot furnace, is characterized in that, comprising:
Eddy current sensor (7), for measuring the inner solid-liquid interface of crucible (5), obtain the electrical signal about solid-liquid interface height, the coil that described eddy current sensor (7) comprises the skeleton in shell, shell and is wrapped on described skeleton; Described coil comprises transmitting coil (7a2) and the compensation coil (7a3) of concentric co-axial layout and axially has interval and coaxially arranged receiving coil (7a1) with described transmitting coil (7a2) and described compensation coil (7a3); Wherein, the wire of described transmitting coil (7a2), described compensation coil (7a3) and described receiving coil (7a1) is arranged in the wire casing of described skeleton, and described skeleton comprises concentric co-axial and the inner framework (7b3) of arranging successively from inside to outside, middle level skeleton (7b2) and outer skeleton (7b1);
Signal processor (9), is electrically connected with described eddy current sensor (7), for being drawn the height value of solid-liquid interface by described electrical signal.
2. Solid liquid interface detector for polysilicon ingot furnace according to claim 1, is characterized in that, described eddy current sensor (7) is arranged on the bottom of the crucible (5) in polycrystalline silicon ingot or purifying furnace (1).
3. Solid liquid interface detector for polysilicon ingot furnace according to claim 1, it is characterized in that, the wire of described transmitting coil (7a2) is wound in the wire casing of described outer skeleton (7b1), the wire of described compensation coil (7a3) is wound in the wire casing of described middle level skeleton (7b2) or described inner framework (7b3), and the wire of described receiving coil (7a1) is wound on described inner framework (7b3), in the wire casing of described middle level skeleton (7b2) and described outer skeleton (7b1), the coiling direction of the wire of described transmitting coil (7a2) and described compensation coil (7a3) is contrary.
4. Solid liquid interface detector for polysilicon ingot furnace according to claim 1, it is characterized in that, the wire of described transmitting coil (7a2) is wound in the wire casing in described outer skeleton (7b1) and described middle level skeleton (7b2), the wire of described compensation coil (7a3) is wound in the wire casing of described inner framework (7b3), and the wire of described receiving coil (7a1) is wound on described inner framework (7b3), in the wire casing of described middle level skeleton (7b2) and described outer skeleton (7b1), the coiling direction of the wire of described transmitting coil (7a2) and described compensation coil (7a3) is contrary.
5. Solid liquid interface detector for polysilicon ingot furnace according to claim 1, is characterized in that, the cross-sectional shape of described wire casing is arc or U-shaped.
6. Solid liquid interface detector for polysilicon ingot furnace according to claim 1, it is characterized in that, described eddy current sensor (7) is from the bottom up successively through the oriented solidified blocks (6) of described crucible (5) and the graphite protective shield (4) of described crucible (5).
7. Solid liquid interface detector for polysilicon ingot furnace according to claim 1, it is characterized in that, also comprise and be positioned at described polycrystalline silicon ingot or purifying furnace (1) electric panel room outward, described signal processor (9) is arranged in described electric panel room, and described eddy current sensor (7) is connected by signal cable (8) with described signal processor (9).
CN201210457753.6A 2012-11-14 2012-11-14 Solid liquid interface detector for polysilicon ingot furnace Active CN102912417B (en)

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CN201210457753.6A CN102912417B (en) 2012-11-14 2012-11-14 Solid liquid interface detector for polysilicon ingot furnace
PCT/CN2013/086664 WO2014075578A1 (en) 2012-11-14 2013-11-07 Solid liquid interface detection device for polysilicon ingot furnace

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Publication number Priority date Publication date Assignee Title
CN102912417B (en) * 2012-11-14 2016-03-30 田志恒 Solid liquid interface detector for polysilicon ingot furnace
CN106048713B (en) * 2016-06-28 2018-06-26 山东天岳晶体材料有限公司 A kind of method for monitoring in real time in silicon carbide solwution method and adjusting solid liquid interface height
CN114574963B (en) * 2022-03-28 2023-03-28 扬州晶樱光电科技有限公司 Temperature output power control system and control method for polycrystalline ingot furnace

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CN102400215A (en) * 2011-11-08 2012-04-04 嘉兴嘉晶电子有限公司 Variable heat exchange device of polycrystal silicon ingot furnace and control method thereof
CN202247005U (en) * 2011-09-07 2012-05-30 浙江精功新能源有限公司 Temperature measuring device for polysilicon ingot casting furnace
CN202403763U (en) * 2011-12-02 2012-08-29 衡阳镭目科技有限责任公司 Metal liquid level detecting device
CN202945385U (en) * 2012-11-14 2013-05-22 田志恒 Polycrystalline silicon solid-liquid interface detecting device for ingot furnace

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CN100535613C (en) * 2005-10-10 2009-09-02 田志恒 Unit for detecting liquor level of molten steel by using magnet coil
CN202492616U (en) * 2012-02-28 2012-10-17 常州天合光能有限公司 Polycrystal ingot silicon solid-liquid two-phase real-time image detecting device
CN102703964B (en) * 2012-05-08 2015-05-06 常州天合光能有限公司 Production method of ingot single crystal
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Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102127809A (en) * 2011-03-16 2011-07-20 常州市万阳光伏有限公司 Polycrystalline silicon ingot furnace
CN202247005U (en) * 2011-09-07 2012-05-30 浙江精功新能源有限公司 Temperature measuring device for polysilicon ingot casting furnace
CN102400215A (en) * 2011-11-08 2012-04-04 嘉兴嘉晶电子有限公司 Variable heat exchange device of polycrystal silicon ingot furnace and control method thereof
CN202403763U (en) * 2011-12-02 2012-08-29 衡阳镭目科技有限责任公司 Metal liquid level detecting device
CN202945385U (en) * 2012-11-14 2013-05-22 田志恒 Polycrystalline silicon solid-liquid interface detecting device for ingot furnace

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