CN202247005U - Temperature measuring device for polysilicon ingot casting furnace - Google Patents
Temperature measuring device for polysilicon ingot casting furnace Download PDFInfo
- Publication number
- CN202247005U CN202247005U CN2011203338399U CN201120333839U CN202247005U CN 202247005 U CN202247005 U CN 202247005U CN 2011203338399 U CN2011203338399 U CN 2011203338399U CN 201120333839 U CN201120333839 U CN 201120333839U CN 202247005 U CN202247005 U CN 202247005U
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- thermocouple
- graphite
- temperature measuring
- thermopair
- measuring device
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Abstract
The utility model relates to a temperature measuring device for a polysilicon ingot casting furnace. The temperature measuring device comprises a thermocouple, graphite upright columns, a heat exchange platform, a lug boss of a lower furnace body, a pipe clip and a graphite crucible bottom plate; one of the graphite upright columns is provided with a through hole which runs through an axial line, wherein the graphite upright columns support a furnace body; the thermocouple is arranged in the pipe hole; the thermocouple penetrates through a through hole of a heating plate; the top of the thermocouple is in contact with the graphite crucible bottom plate; the bottom of the thermocouple is fixed on the lug boss of the lower furnace body through the pipe clip; and a line for the data transfer of the thermocouple is connected with outside from a lower part of the pipe hole of the corresponding graphite upright column. The temperature measuring device for the polysilicon ingot casting furnace has the advantages that: after the thermocouple is mounted in the pipe hole of the corresponding graphite upright column instead of being individually mounted in a hanging manner, the operation of ingot casting cannot cause collision to a sleeve of the thermocouple due to the protection of a shell of the corresponding graphite upright column; and the thermocouple is enwrapped by a thick pipe wall of the corresponding graphite upright column and is not influenced by the temperature of an external thermal field, so that the accuracy of temperature measuring is high, and the influence on the improvement of the quality of silicon ingots is great.
Description
Technical field
The utility model relates to the polycrystalline ingot ingot furnace of photovoltaic industry, is meant the polycrystalline silicon ingot or purifying furnace temperature measuring equipment specifically.
Background technology
The polycrystalline ingot ingot furnace is a kind of silicon remelting device; Its function is that the silicon raw material that contains impurity is refined the solar-grade silicon ingot that becomes to possess generating purity through the remelting technology; Its process is: heating, melted ingot, long crystalline substance, annealing, 5 steps of cooling; To the wafer quality crucial especially be long brilliant technology, to the control of nuclei growth, need strictness to follow and stablize the rational temperature lateral with long brilliant size.The fusing point of silicon is at 1414 ℃, and temperature of thermal field arrives 1550 ℃ usually in the body of heater, so from heating, be melted to long crystalline substance and all be under the condition of high temperature; In actual production, need strict control heat exchange platform gradient of temperature, and the real time temperature of heat exchange platform with about two thermopairs measure; Though hard but crisp ceramic protecting pipe is being overlapped in the thermopair outside; Passing in the pore that thermal insulation layer vertically leads to heat exchange platform central authorities in bottom of furnace body central authorities, all is unsettled upright in two sections contiguous up and down zones of thermal insulation layer, easily and surrounding space transmit heat mutually and have influence on the thermometric accuracy of heat exchange platform; When rocking toward furnace charge, body of heater up-down or the generation of other situations; Ceramic protecting pipe breaks up easily, or causes the oxidation distortion under the high temperature owing to being in for a long time, even ruptures, leaks gas; The fault that causes the polycrystalline silicon ingot casting of whole stove to be scrapped often takes place because temperature measuring equipment lost efficacy.
Summary of the invention
The purpose of the utility model is to overcome the defective of above-mentioned prior art, provide a kind of thermometric accurately, the polycrystalline silicon ingot or purifying furnace temperature measuring equipment of long service life.
Purport of the present invention is to utilize existing furnace binding, and installation site and mode of connection realize through changing, and technical scheme is following:
The polycrystalline silicon ingot or purifying furnace temperature measuring equipment comprises thermopair, graphite column, heat exchange platform, lower furnace body boss, pipe clamp, plumbago crucible base plate; Beat communicating pores in one of them of the several graphite columns that support body of heater along axial line; Thermopair is set in pore, and thermopair passes the through hole of heat exchange platform, top contact plumbago crucible base plate; The thermopair bottom is fixed on the lower furnace body boss through pipe clamp, and the circuit of thermopair pass data picks out from graphite column pore bottom.
The benefit of the utility model is: thermopair from independent unsettled installation; Move in the graphite column pore install after; Because the graphite column all is that firm rigidly fixing is connected with heat exchange platform, body of heater; So pouring practice can not produce thermocouple sheath and collide with, safety performance is good, long service life; And thermopair is in the thick tube wall of the graphite column parcel, do not receive the influence of extraneous temperature of thermal field, the real time temperature of an induction heat board, and temperature measurement accuracy is high, and is very big to improving the silicon ingot quality influence.
Description of drawings
Fig. 1 is the polycrystalline silicon ingot or purifying furnace temperature measuring equipment sectional view of the utility model;
Fig. 2 is the polycrystalline silicon ingot or purifying furnace temperature measuring equipment sectional view and the partial enlarged drawing thereof of prior art.
Description of reference numerals:
1 thermopair, 2 graphite columns, 3 heat exchange platforms, 4 lower furnace body boss, 5 pipe clamps, 6 plumbago crucible base plates.
Embodiment
Come further to set forth the utility model below in conjunction with embodiment and accompanying drawing:
Embodiment: polycrystalline silicon ingot or purifying furnace temperature measuring equipment as shown in Figure 1 has thermopair 1, graphite column 2, heat exchange platform 3, lower furnace body boss 4, pipe clamp 5, plumbago crucible base plate 6.Come further to launch to set forth through installation process below; Thermopair 1 inserts from the bottom of graphite column 2 pores; Pass the through hole of heat exchange platform 3; Thermopair 1 top touches plumbago crucible base plate 6, and thermopair 1 bottom fixes on the lower furnace body boss 4 through pipe clamp 5 clampings, and the circuit of thermopair 1 pass data picks out from graphite column 2 pore bottoms.
Except that the foregoing description, the utility model can also have other embodiments.All employings are equal to the technical scheme of replacement or equivalent transformation formation, all drop in the protection domain of the utility model requirement.
Claims (1)
1. polycrystalline silicon ingot or purifying furnace temperature measuring equipment; Comprise thermopair, graphite column, heat exchange platform, lower furnace body boss, pipe clamp, plumbago crucible base plate, it is characterized in that: beat communicating pores in one of them of the several graphite columns that support body of heater along axial line, thermopair is set in pore; Thermopair passes the through hole of heat exchange platform; Top contact plumbago crucible base plate, the thermopair bottom is fixed on the lower furnace body boss through pipe clamp, and the circuit of thermopair pass data picks out from graphite column pore bottom.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011203338399U CN202247005U (en) | 2011-09-07 | 2011-09-07 | Temperature measuring device for polysilicon ingot casting furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011203338399U CN202247005U (en) | 2011-09-07 | 2011-09-07 | Temperature measuring device for polysilicon ingot casting furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202247005U true CN202247005U (en) | 2012-05-30 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011203338399U Expired - Fee Related CN202247005U (en) | 2011-09-07 | 2011-09-07 | Temperature measuring device for polysilicon ingot casting furnace |
Country Status (1)
| Country | Link |
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| CN (1) | CN202247005U (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102912417A (en) * | 2012-11-14 | 2013-02-06 | 田志恒 | Solid liquid interface detector for polysilicon ingot furnace |
| CN103361721A (en) * | 2013-07-15 | 2013-10-23 | 江苏协鑫硅材料科技发展有限公司 | Melting height control method of ingot casting crystal seed and polycrystalline silicon ingot casting furnace |
| CN104152993A (en) * | 2014-08-06 | 2014-11-19 | 江西赛维Ldk太阳能高科技有限公司 | Method capable of eliminating measurement of melting height of seed crystals for polycrystalline silicon ingot casting and polycrystalline silicon ingot casting furnace |
| CN104294357A (en) * | 2014-10-23 | 2015-01-21 | 江西赛维Ldk太阳能高科技有限公司 | Polycrystalline ingot casting seed crystal melting control method and polycrystalline ingot casting furnace |
| CN106917138A (en) * | 2017-04-23 | 2017-07-04 | 连云港清友新能源科技有限公司 | For the polycrystalline cast ingot furnace body of oversize silicon ingot |
-
2011
- 2011-09-07 CN CN2011203338399U patent/CN202247005U/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102912417A (en) * | 2012-11-14 | 2013-02-06 | 田志恒 | Solid liquid interface detector for polysilicon ingot furnace |
| CN102912417B (en) * | 2012-11-14 | 2016-03-30 | 田志恒 | Solid liquid interface detector for polysilicon ingot furnace |
| CN103361721A (en) * | 2013-07-15 | 2013-10-23 | 江苏协鑫硅材料科技发展有限公司 | Melting height control method of ingot casting crystal seed and polycrystalline silicon ingot casting furnace |
| CN104152993A (en) * | 2014-08-06 | 2014-11-19 | 江西赛维Ldk太阳能高科技有限公司 | Method capable of eliminating measurement of melting height of seed crystals for polycrystalline silicon ingot casting and polycrystalline silicon ingot casting furnace |
| CN104294357A (en) * | 2014-10-23 | 2015-01-21 | 江西赛维Ldk太阳能高科技有限公司 | Polycrystalline ingot casting seed crystal melting control method and polycrystalline ingot casting furnace |
| CN106917138A (en) * | 2017-04-23 | 2017-07-04 | 连云港清友新能源科技有限公司 | For the polycrystalline cast ingot furnace body of oversize silicon ingot |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120530 Termination date: 20170907 |
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| CF01 | Termination of patent right due to non-payment of annual fee |