CN103122477A - Polycrystalline silicon ingot casting device - Google Patents
Polycrystalline silicon ingot casting device Download PDFInfo
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- CN103122477A CN103122477A CN 201110370471 CN201110370471A CN103122477A CN 103122477 A CN103122477 A CN 103122477A CN 201110370471 CN201110370471 CN 201110370471 CN 201110370471 A CN201110370471 A CN 201110370471A CN 103122477 A CN103122477 A CN 103122477A
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- ingot casting
- silicon ingot
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Abstract
The invention discloses a polycrystalline silicon ingot casting device. The device comprises a furnace body and a bracket, wherein a hydraulic cylinder which is connected with the furnace body is arranged on the bracket, a crucible is arranged in the furnace body, a graphite crucible is arranged outside the crucible, heating devices are arranged on the external periphery of the graphite crucible, a graphite cooling block is arranged below the graphite crucible, a heat insulation cage is arranged on the periphery of the crucible, a support column is installed under the bottom of the furnace body, penetrates through the heat insulation cage and supports the graphite cooling block, and a furnace chamber over-temperature protection thermocouple and a crucible temperature control measurement thermocouple are arranged on the top of the furnace body. Through the mode, the structure of the furnace body can be simplified, and purifying and crystal growing effects can be improved; the device has the characteristics of being lightness and stability in movement, reliable technology and simplicity in operation and can detect the internal temperatures of a furnace chamber and the heat insulation cage at the same time, so that the reliability of the polycrystalline silicon ingot casting device is improved.
Description
Technical field
The present invention relates to field polysilicon, particularly relate to a kind of polycrystalline silicon ingot casting device.
Background technology
Silicon is a kind of important electronics, optical material, plays an important role in wide fields such as information, communication, space flight, environment protection, and the market requirement is increasing.Just can not satisfy the demand far away as solar cell silicon, the silicon for solar cell source has at present: the one, and polycrystalline silicon semiconductor elbow material, particle; The 2nd, the polysilicon of the solar level that the unnecessary throughput of polysilicon is produced; The 3rd, material end to end, flavoring food that electronic-grade polycrystalline silicon is produced.
Polycrystalline silicon ingot or purifying furnace is mainly used in producing silicon semiconductor material with ingot ways at present, polycrystalline silicon ingot casting production method of the prior art, a kind of is that maintenance well heater and stay-warm case are motionless, move down the crucible of polycrystalline silicon material after fusing is housed: make and be equipped with that polycrystalline silicon material and well heater relative position change after fusing, slowly shift out well heater, thereby after making fusing, polycrystalline silicon material forms longitudinal temperature gradient, and slowly crystallization of polycrystalline silicon material after fusing finally forms polycrystalline silicon ingot casting.Another kind is that maintenance well heater and crucible are motionless, stay-warm case moves up, make to break away between stay-warm case and lower insulation base plate and form a gap, heat leaks from the gap, crucible bottom is cooling, thereby after making fusing, polycrystalline silicon material forms longitudinal temperature gradient, and slowly crystallization of polycrystalline silicon material after fusing finally forms polycrystalline silicon ingot casting.These two kinds of methods are in order to form the longitudinal temperature gradient of polycrystalline silicon material, and mobile piece volumes is large, weight is large, in moving process easily vibration-generating, creep etc., affect the crystalline quality of polysilicon.
In addition, at present the polycrystalline silicon ingot or purifying furnace overheat protector is mainly measured the temperature of thermocouple measurement polycrystalline silicon ingot or purifying furnace well heater by temperature control, has a measurement space single, can not react the actual temperature of furnace chamber inside.What temperature control was measured the thermopair detection is the temperature of stay-warm case internal heater, causes thermopair fragile because heater temperature is too high.
Summary of the invention
The technical problem that the present invention mainly solves is to provide a kind of polycrystalline silicon ingot casting device, can simplify furnace binding, and motion is steadily light and handy, can detect simultaneously in furnace chamber and the temperature in heat-insulation cage, has improved the unfailing performance of polycrystalline silicon ingot casting device.
for solving the problems of the technologies described above, the technical scheme that the present invention adopts is: a kind of polycrystalline silicon ingot casting device is provided, comprise: body of heater and support, described support is provided with the hydro-cylinder that is connected with body of heater, be provided with crucible in described body of heater, the described crucible outside is provided with plumbago crucible, described plumbago crucible outside surrounding is provided with well heater, described plumbago crucible below is provided with graphitic cooling block, described crucible surrounding is provided with heat-insulation cage, described bottom of furnace body is provided with pillar stiffener, described pillar stiffener passes heat-insulation cage and is supported on bottom graphitic cooling block, described body of heater top is provided with furnace chamber overheat protector thermopair and the crucible temperature control is measured thermopair.
In a preferred embodiment of the present invention, described furnace chamber overheat protector thermopair is arranged on the body of heater top, passes body of heater and enters furnace chamber.
In a preferred embodiment of the present invention, described crucible temperature control is measured thermopair and is arranged on the body of heater top, passes body of heater and heat-insulation cage, enters heat-insulation cage inside.
In a preferred embodiment of the present invention, described well heater is the terraced well heater of graphite temperature, and the resistance thickness of well heater is cumulative from top to bottom.
In a preferred embodiment of the present invention, described body of heater is provided with vacuum pumping port.
In a preferred embodiment of the present invention, described body of heater also is provided with controller outward, and described furnace chamber overheat protector thermopair and crucible temperature control measure thermopair and described controller is electrically connected.
The invention has the beneficial effects as follows: the polycrystalline silicon ingot casting device that the present invention discloses, can simplify furnace binding, increase and purify and the crystal growth result, has motion steadily light and handy, process, characteristics simple to operate can detect in furnace chamber and the temperature in heat-insulation cage simultaneously, have improved the unfailing performance of polycrystalline silicon ingot casting device.
Description of drawings
Fig. 1 is the structural representation of a preferred embodiment of polycrystalline silicon ingot casting device of the present invention;
In accompanying drawing, the mark of each parts is as follows: 1, body of heater, 2, plumbago crucible, 3, vacuum pumping port, 4, crucible; 5, heat-insulation cage, 6, support, 7, furnace chamber overheat protector thermopair, 8, the crucible temperature control measures thermopair; 9, hydro-cylinder, 10, well heater, 11, graphitic cooling block, 12, pillar stiffener.
Embodiment
Below in conjunction with accompanying drawing, preferred embodiment of the present invention is described in detail, thereby so that advantages and features of the invention can be easier to be it will be appreciated by those skilled in the art that, protection scope of the present invention is made more explicit defining.
See also Fig. 1, the embodiment of the present invention comprises:
a kind of polycrystalline silicon ingot casting device, comprise: body of heater 1 and support 6, described support 6 is provided with the hydro-cylinder 9 that is connected with body of heater 1, be provided with crucible 4 in described body of heater 1, described crucible 4 outsides are provided with plumbago crucible 2, described plumbago crucible 2 outside surroundings are provided with well heater 10, described plumbago crucible 2 belows are provided with graphitic cooling block 11, described crucible 4 surroundings are provided with heat-insulation cage 5, described body of heater 1 bottom is provided with pillar stiffener 12, described pillar stiffener 12 passes heat-insulation cage 5 and is supported on graphitic cooling block 11 bottoms, described body of heater 1 top is provided with furnace chamber overheat protector thermopair 7 and the crucible temperature control is measured thermopair 8.
Described furnace chamber overheat protector thermopair 7 is arranged on the body of heater top, passes body of heater 1 and enters furnace chamber, can be used for measuring the temperature in furnace chamber, improves safety performance.
Described crucible temperature control is measured thermopair 8 and is arranged on body of heater 1 top, passes body of heater 1 and heat-insulation cage 5, enters heat-insulation cage 5 inside, can be used for detecting the temperature in heat-insulation cage 5, improves safety performance.
Described well heater 10 is the terraced well heater of graphite temperature, and the resistance thickness of well heater 10 is cumulative from top to bottom.Therefore adopt the from up to down cumulative terraced well heater of graphite temperature of thickness, because the increase of resistance value with graphite thickness reduces, when switching on, the terraced well heater of graphite temperature upper end thermal value is high, and the lower end thermal value is low, from up to down the Gradient distribution of formation temperature.In silicon liquid cooling solidification stages, this effect makes the silicon liquid in crucible 2 keep from top to bottom directed thermograde, be that silicon liquid just can be realized the gradient cooled and solidified under static state, and do not need displacement, due to body of heater 1 inside relatively moving without any assembly, make the silicon material in whole purification process, impact is not disturbed in the interference such as vibration, thereby reaches good purification and crystal growth result.
Described body of heater 1 is provided with vacuum pumping port 3, is used for carrying out vacuum displacement.
The outer controller that also is provided with of described body of heater 1, described furnace chamber overheat protector thermopair 7 and crucible temperature control are measured thermopair 8 and are electrically connected with described controller.Described furnace chamber overheat protector thermopair 7 and crucible temperature control are measured thermopair 8 temperature data that detects are transferred to described controller; find when controller the temperature that detects and surpass ingot furnace autoprotection set(ting)value (each ingot furnace has the temperature protection set(ting)value); furnace chamber overheat protector thermopair 7 and crucible temperature control are measured the observed value correspondence temperature protection set(ting)value separately of thermopair 8; the observed value of measuring thermopair 8 when furnace chamber overheat protector thermopair 7 or crucible temperature control surpasses temperature protection set(ting)value separately, is judged to be the stove excess temperature.Controller is controlled AC power and is disconnected, and makes well heater 10 stopped heatings, reaches the purpose of protection ingot furnace.
Principle of work of the present invention is as follows:
Reduce body of heater 1 bottom by hydro-cylinder 9, filling silicon material, pass into shielding gas, and carry out vacuum displacement, the energising heating enters the temperature rise period, beginning molten silicon material, in melting process, described furnace chamber overheat protector thermopair 7 and crucible temperature control are measured thermopair 8 and are detected respectively temperature in furnace chamber temperature and heat-insulation cage; After melting finishes, enter the oriented growth stage, accurately control cooling rate, control thermal field with the terraced calorifier of graphite temperature, silicon is risen begin at the bottom of crucible 4 solidification and crystallization, solid-liquid interface is under the thermograde thermal field, move up lentamente, silicon liquid crystalline growth gradually forms polysilicon, and the impurity that segregation coefficient is little takes the top of ingot to, reaches the further purification of silicon and the purpose of polycrystalline silicon ingot casting.
Polycrystalline silicon ingot casting device of the present invention can be simplified body of heater 1 structure, increases to purify and the crystal growth result, has motion steadily light and handy, process, characteristics simple to operate, can detect simultaneously in furnace chamber and the temperature in heat-insulation cage 5, improve the unfailing performance of polycrystalline silicon ingot casting device.
The above is only embodiments of the invention; not thereby limit the scope of the claims of the present invention; every equivalent structure or equivalent flow process conversion that utilizes specification sheets of the present invention and accompanying drawing content to do; or directly or indirectly be used in other relevant technical fields, all in like manner be included in scope of patent protection of the present invention.
Claims (6)
1. polycrystalline silicon ingot casting device; it is characterized in that; comprise: body of heater and support; described support is provided with the hydro-cylinder that is connected with body of heater; be provided with crucible in described body of heater; the described crucible outside is provided with plumbago crucible; described plumbago crucible outside surrounding is provided with well heater; described plumbago crucible below is provided with graphitic cooling block; described crucible surrounding is provided with heat-insulation cage; described bottom of furnace body is provided with pillar stiffener, and described pillar stiffener passes heat-insulation cage and is supported on graphitic cooling block bottom, and described body of heater top is provided with furnace chamber overheat protector thermopair and the crucible temperature control is measured thermopair.
2. polycrystalline silicon ingot casting device according to claim 1, is characterized in that, described furnace chamber overheat protector thermopair is arranged on the body of heater top, passes body of heater and enters furnace chamber.
3. polycrystalline silicon ingot casting device according to claim 1, is characterized in that, described crucible temperature control is measured thermopair and is arranged on the body of heater top, passes body of heater and heat-insulation cage, enters heat-insulation cage inside.
4. polycrystalline silicon ingot casting device according to claim 1, is characterized in that, described well heater is the terraced well heater of graphite temperature, and the resistance thickness of well heater is cumulative from top to bottom.
5. polycrystalline silicon ingot casting device according to claim 1, is characterized in that, described body of heater is provided with vacuum pumping port.
6. polycrystalline silicon ingot casting device according to claim 1, is characterized in that, described body of heater also is provided with controller outward, and described furnace chamber overheat protector thermopair and crucible temperature control measure thermopair and described controller is electrically connected.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110370471 CN103122477A (en) | 2011-11-21 | 2011-11-21 | Polycrystalline silicon ingot casting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110370471 CN103122477A (en) | 2011-11-21 | 2011-11-21 | Polycrystalline silicon ingot casting device |
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| Publication Number | Publication Date |
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| CN103122477A true CN103122477A (en) | 2013-05-29 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 201110370471 Pending CN103122477A (en) | 2011-11-21 | 2011-11-21 | Polycrystalline silicon ingot casting device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107957193A (en) * | 2016-10-18 | 2018-04-24 | 福建省瑞奥麦特轻金属有限责任公司 | A kind of Automatic-temperature holding furnace for being used to continuously prepare aluminium alloy semi-solid slurry |
| CN117816047A (en) * | 2024-03-06 | 2024-04-05 | 通威微电子有限公司 | Continuous synthesis equipment and method for silicon carbide powder |
-
2011
- 2011-11-21 CN CN 201110370471 patent/CN103122477A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107957193A (en) * | 2016-10-18 | 2018-04-24 | 福建省瑞奥麦特轻金属有限责任公司 | A kind of Automatic-temperature holding furnace for being used to continuously prepare aluminium alloy semi-solid slurry |
| CN117816047A (en) * | 2024-03-06 | 2024-04-05 | 通威微电子有限公司 | Continuous synthesis equipment and method for silicon carbide powder |
| CN117816047B (en) * | 2024-03-06 | 2024-05-14 | 通威微电子有限公司 | Continuous synthesis equipment and method for silicon carbide powder |
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Application publication date: 20130529 |