WO2014075578A1 - Solid liquid interface detection device for polysilicon ingot furnace - Google Patents

Solid liquid interface detection device for polysilicon ingot furnace Download PDF

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Publication number
WO2014075578A1
WO2014075578A1 PCT/CN2013/086664 CN2013086664W WO2014075578A1 WO 2014075578 A1 WO2014075578 A1 WO 2014075578A1 CN 2013086664 W CN2013086664 W CN 2013086664W WO 2014075578 A1 WO2014075578 A1 WO 2014075578A1
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skeleton
liquid interface
coil
solid
ingot furnace
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PCT/CN2013/086664
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French (fr)
Chinese (zh)
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田志恒
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田立
田陆
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F23/00—Indicating or measuring liquid level or level of fluent solid material, e.g. indicating in terms of volume or indicating by means of an alarm
    • G01F23/22—Indicating or measuring liquid level or level of fluent solid material, e.g. indicating in terms of volume or indicating by means of an alarm by measuring physical variables, other than linear dimensions, pressure or weight, dependent on the level to be measured, e.g. by difference of heat transfer of steam or water
    • G01F23/26—Indicating or measuring liquid level or level of fluent solid material, e.g. indicating in terms of volume or indicating by means of an alarm by measuring physical variables, other than linear dimensions, pressure or weight, dependent on the level to be measured, e.g. by difference of heat transfer of steam or water by measuring variations of capacity or inductance of capacitors or inductors arising from the presence of liquid or fluent solid material in the electric or electromagnetic fields
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/006—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Definitions

  • the present invention relates to a polycrystalline silicon ingot furnace apparatus, and more particularly to a polysilicon ingot furnace solid-liquid interface detecting apparatus. Background technique
  • Polycrystalline silicon ingot furnace is one of the most important equipment in the solar photovoltaic industry. It is melted and adjusted to a material suitable for the manufacture of solar cells by refining high-purity silicon.
  • the silicon raw material is melted into a silicon ingot by a directional solidification technique, and then the silicon ingot is cut into silicon wafers for use in a solar cell.
  • the main production processes for producing polycrystalline silicon in polycrystalline silicon ingot furnace are as follows: a high-purity fine-grained silicon raw material (called a seed crystal) is placed on the bottom layer of the crucible, and then the crude silicon raw material is laid thereon; An active heating layer is arranged around the top of the crucible. The crude silicon raw material is melted.
  • the temperature is lowered into the crystallization stage; when the crystallization starts, the molten silicon is charged.
  • the material does not move, the heating layer is slowly moved upward, and the heat at the bottom of the crucible is dissipated through the gap between the heating layer and the thermal insulation layer, and the temperature of the crucible directional solidification block is gradually lowered.
  • the crystallized crystals grow slowly, and the molten silicon liquid gradually decreases.
  • the solid-liquid interface forms a relatively stable temperature gradient for crystal growth during the crystallization process, and the solid-liquid interface gradually rises from the bottom of the crucible to form a crystallized ingot.
  • the present invention aims to provide a solid-liquid interface detecting device for a polycrystalline silicon ingot furnace, which solves the problems of poor quality of the finished silicon ingot and high production cost caused by artificially determining the position of the solid-liquid interface in the prior art.
  • the present invention provides a polysilicon ingot furnace solid-liquid interface detecting device, comprising: an eddy current sensor for measuring a solid-liquid interface inside a crucible, obtaining an electrical signal about a solid-liquid interface height; a signal processing machine, Electrically connected to the eddy current sensor for determining the height value of the solid-liquid interface by electrical signals.
  • the eddy current sensor is disposed at the bottom of the crucible in the polycrystalline silicon ingot furnace.
  • the eddy current sensor comprises an outer casing, a skeleton in the outer casing and a coil wound around the skeleton; the coil includes a concentric coaxially arranged emission coil and a compensation coil and is axially spaced from the emission coil and the compensation coil
  • the receiving line of the shaft arrangement wherein the wires of the transmitting line ⁇ , the compensation line ⁇ and the receiving line ⁇ are arranged in the slot of the skeleton.
  • the skeleton comprises a concentric coaxial, an inner layer skeleton, a middle layer skeleton and an outer layer skeleton which are sequentially arranged from the inside to the outside, and the wires of the emission line are wound in the wire grooves of the outer layer skeleton, and the wires of the compensation wire turns are wound in the middle layer
  • the wire grooves of the skeleton or the inner layer skeleton, and the wires receiving the wire turns are wound in the wire grooves of the inner layer skeleton, the middle layer skeleton, and the outer layer skeleton.
  • the skeleton comprises a concentric coaxial, an inner layer skeleton, a middle layer skeleton and an outer layer skeleton which are sequentially arranged from the inner side to the outer side, and the wire of the emission line turns around the wire groove of the outer layer skeleton and the middle layer skeleton
  • the wire of the compensation wire turns into the wire groove of the inner layer skeleton
  • the wire of the receiving wire turns into the wire groove of the inner layer skeleton, the middle layer skeleton and the outer layer skeleton.
  • the winding of the transmitting wire ⁇ and the compensation wire ⁇ is opposite in the winding direction.
  • cross-sectional shape of the wire groove is curved or U-shaped.
  • the eddy current sensor sequentially passes through the directional solidified block of the crucible and the graphite shield from bottom to top.
  • an electric chamber is disposed outside the polycrystalline silicon ingot furnace, the signal processor is disposed in the electrical room, and the eddy current sensor and the signal processor are connected by a signal cable.
  • the height of the solid-liquid interface of the polysilicon can be accurately detected online, thereby controlling the crystal growth timing of the polysilicon, improving the quality of the silicon ingot, reducing the waste of the seed crystal, and reducing the silicon ingot. Production costs.
  • FIG. 1 is a schematic view showing a solid-liquid interface detecting device for a polycrystalline silicon ingot furnace according to an embodiment of the present invention
  • Fig. 2 is a schematic view showing an eddy current sensor in an embodiment of the present invention
  • Fig. 3 is a partially enlarged schematic view showing a portion A in Fig. 2.
  • the heating layer 2 is disposed in the upper portion of the polycrystalline silicon ingot furnace 1
  • the directional solidifying block 6 carrying the crucible 5 is disposed in the lower portion of the polycrystalline silicon ingot furnace 1
  • graphite protection is provided around the crucible 5
  • the plate 4 is used to support the crucible 5.
  • a small amount of seed crystal 3b is placed on the bottom layer in the crucible 5, and then the upper silicon raw material 3a is laid over.
  • the eddy current sensor 7 for detecting the solid-liquid interface of the polysilicon is disposed at the bottom of the crucible 5 in the polycrystalline silicon ingot furnace.
  • the conductivity of the solid state and the liquid state of the polycrystalline silicon differ greatly. By providing the eddy current sensor 7, the height of the solid-liquid interface of the polysilicon can be detected.
  • the directional flow solidification block 6 and the graphite shield 4 are provided with small holes, and the eddy current sensor 7 is sequentially disposed from the bottom to the top through the directional solidified block 6 with small holes and the graphite shield 4 in the polycrystalline silicon ingot furnace.
  • the arrangement of the small holes reduces the obstruction of the eddy current sensor 7 to the solid-liquid interface of the polysilicon, which is advantageous for improving the sensitivity of the eddy current sensor 7.
  • the signal processor 9 is disposed in an electric room outside the polycrystalline silicon ingot furnace 1, and the eddy current sensor 7 is connected to the signal processor 9 via a signal cable 8.
  • the eddy current sensor 7 includes a casing 7c, a bobbin and a coil, which are concentrically arranged by the emission line ⁇ 7a2 and the compensation line ⁇ 7a3 and the emission line ⁇ 7a2 and the compensation line ⁇ 7a3.
  • the receiving line ⁇ 7al is arranged coaxially, wherein the transmitting line a7a2, the compensation line ⁇ 7a3 and the receiving line ⁇ 7al are wound by a wire in a wire slot of the skeleton.
  • the eddy current sensor skeleton comprises an inner layer skeleton, a middle layer skeleton and an outer layer skeleton which are concentrically arranged coaxially, and the emission line ⁇ 7a2 is wound by a wire in a wire groove of the outer layer skeleton 7b1, and the compensation wire ⁇ 7a3 is wound in the middle layer skeleton
  • the wire groove of 7b2 and the receiving wire 7a are wound by a wire in the wire groove of each layer skeleton.
  • the emission line ⁇ 7a2 is wound by a wire in the wire slot of the outer layer skeleton 7b1 and the middle layer skeleton 7b2, and the compensation wire ⁇ 7a3 is wound by the wire wire in the wire groove of the inner layer skeleton 7b3, and the receiving wire ⁇ 7al
  • the wires are wound in the wire grooves of the skeletons of the respective layers.
  • the cross-sectional shape of the wire groove is curved or U-shaped, which is advantageous for providing more wires in a limited space while thinning the thickness of the skeleton between each layer of turns, further reducing the thickness of each layer.
  • the height of the solid-liquid interface of polysilicon can be accurately detected in real time online, the crystal growth timing of polysilicon can be controlled, the quality of silicon ingot can be improved, the waste of seed crystal can be reduced, and the production cost of silicon ingot can be reduced.
  • the receiving wire of the eddy current sensor for detecting the solid-liquid interface of the polysilicon is wound into the wire groove of the inner layer skeleton, the middle layer skeleton and the outer layer skeleton, and the receiving wire is increased to receive the induced vortex on the liquid silicon and the solid silicon.
  • the ability of the current; the compensation line ⁇ is coaxially arranged with the emission line ⁇ and the winding direction is opposite.
  • the compensation line ⁇ compensates the background signal generated by the excitation current of the emission line ⁇ in the receiving line, and the signal-to-noise ratio is improved. Sensitivity and measurement of solid-liquid interface detection.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electromagnetism (AREA)
  • Power Engineering (AREA)
  • Thermal Sciences (AREA)
  • Fluid Mechanics (AREA)
  • General Physics & Mathematics (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

A solid liquid interface detection device for a polysilicon ingot furnace comprises: an eddy current sensor (7) for measuring a solid liquid interface inside a crucible (5) to obtain an electric signal about the height of the solid liquid interface; and a signal processor (9), electrically connected to the eddy current sensor (7) and used for obtaining a height value of the solid liquid interface according to the electric signal.

Description

多晶硅铸锭炉固液界面检测装置  Polycrystalline silicon ingot furnace solid-liquid interface detecting device
本申请要求于 2012 年 11 月 14 日提交中国专利局、 申请号为 201210457753.6、 发明名称为 "多晶硅铸锭炉固液界面检测装置" 的中 国专利申请的优先权， 其全部内容通过引用结合在本申请中。 技术领域  This application claims priority to Chinese Patent Application No. 201210457753.6, entitled "Polysilicon Ingot Furnace Solid-Liquid Interface Detection Device", filed on November 14, 2012, the entire contents of which are incorporated herein by reference. In the application. Technical field
本发明涉及多晶硅铸锭炉内设备， 具体而言， 涉及一种多晶硅铸锭 炉固液界面检测装置。 背景技术  The present invention relates to a polycrystalline silicon ingot furnace apparatus, and more particularly to a polysilicon ingot furnace solid-liquid interface detecting apparatus. Background technique
多晶硅铸锭炉是太阳能光伏产业中最为重要的设备之一。 它通过提 炼得到的高纯度硅熔融调整成为适合于制造太阳能电池的材料， 采用定 向长晶凝固技术将硅原料熔融制成硅锭， 之后工序再将硅锭切成硅片供 太阳能电池使用。 多晶硅铸锭炉生产多晶硅的主要生产工艺有： 将高纯 度细小颗粒的硅原料（筒称籽晶 )铺放在坩埚内的底层， 然后在其上铺 放粗硅原料； 接下来进行预热 （坩埚的四周和上面设有活动的加热层） 使粗硅原料熔化， 待粗硅原料全部熔融为液态的硅而籽晶未全部熔化 前， 开始降温进入结晶阶段； 开始结晶时， 装有熔融硅料的坩埚不动， 将加热层緩慢向上移动， 坩埚底部的热量通过加热层与隔热层之间的空 隙散发出去， 逐渐降低坩埚定向凝固块的温度。 在此过程中， 已结晶的 晶体緩慢生长， 而熔融的硅液逐渐减薄。 这样在结晶过程中固液界面形 成比较稳定的有利于晶体生长的温度梯度， 同时固液界面从坩埚底部向 上逐渐升高而形成定向结晶的硅锭。  Polycrystalline silicon ingot furnace is one of the most important equipment in the solar photovoltaic industry. It is melted and adjusted to a material suitable for the manufacture of solar cells by refining high-purity silicon. The silicon raw material is melted into a silicon ingot by a directional solidification technique, and then the silicon ingot is cut into silicon wafers for use in a solar cell. The main production processes for producing polycrystalline silicon in polycrystalline silicon ingot furnace are as follows: a high-purity fine-grained silicon raw material (called a seed crystal) is placed on the bottom layer of the crucible, and then the crude silicon raw material is laid thereon; An active heating layer is arranged around the top of the crucible. The crude silicon raw material is melted. When the crude silicon raw material is completely melted into liquid silicon and the seed crystal is not completely melted, the temperature is lowered into the crystallization stage; when the crystallization starts, the molten silicon is charged. The material does not move, the heating layer is slowly moved upward, and the heat at the bottom of the crucible is dissipated through the gap between the heating layer and the thermal insulation layer, and the temperature of the crucible directional solidification block is gradually lowered. During this process, the crystallized crystals grow slowly, and the molten silicon liquid gradually decreases. Thus, the solid-liquid interface forms a relatively stable temperature gradient for crystal growth during the crystallization process, and the solid-liquid interface gradually rises from the bottom of the crucible to form a crystallized ingot.
在熔化末期和结晶初期之间， 存在如下一个矛盾： 即若籽晶剩余的 太多就开始结晶会造成有效硅锭的产量低以及对籽晶的浪费， 若籽晶全 部被熔融再开始结晶则生产出的硅锭质量差， 用这种硅锭切成硅片制成 的电池光电转换效率低。但是，由于多晶硅铸锭炉内温度高（约 1400°C )、 热场控制严， 现在还未有一个可行的检测装置能实时准确地检测固液界 面， 使籽晶接近被完全熔融时就开始结晶。 目前， 固液界面的高度和何 时结晶都通过人工经验来判断， 这造成硅锭质量差和生产成本高。 发明内容 Between the end of melting and the initial stage of crystallization, there is a contradiction: if the seed crystals remain too much, crystallization will result in low production of effective silicon ingots and waste of seed crystals. When the portion is melted and then crystallized, the quality of the silicon ingot produced is poor, and the battery made by cutting the silicon ingot into a silicon wafer has low photoelectric conversion efficiency. However, due to the high temperature in the polycrystalline silicon ingot furnace (about 1400 ° C) and the strict thermal field control, there is no feasible detection device that can accurately detect the solid-liquid interface in real time, so that the seed crystal is close to being completely melted. crystallization. At present, the height and timing of the solid-liquid interface are judged by manual experience, which results in poor quality of the ingot and high production cost. Summary of the invention
本发明旨在提供一种多晶硅铸锭炉固液界面检测装置， 以解决现有 技术中由人工判断固液界面位置造成的成品硅锭质量差和生产成本高 的问题。  The present invention aims to provide a solid-liquid interface detecting device for a polycrystalline silicon ingot furnace, which solves the problems of poor quality of the finished silicon ingot and high production cost caused by artificially determining the position of the solid-liquid interface in the prior art.
为了实现上述目的， 本发明提供了一种多晶硅铸锭炉固液界面检测 装置， 包括： 涡流传感器， 用于测量坩埚内部的固液界面， 得到关于固 液界面高度的电信号； 信号处理机， 与涡流传感器电连接， 用于通过电 信号得出固液界面的高度值。  In order to achieve the above object, the present invention provides a polysilicon ingot furnace solid-liquid interface detecting device, comprising: an eddy current sensor for measuring a solid-liquid interface inside a crucible, obtaining an electrical signal about a solid-liquid interface height; a signal processing machine, Electrically connected to the eddy current sensor for determining the height value of the solid-liquid interface by electrical signals.
进一步地， 涡流传感器设置在多晶硅铸锭炉内的坩埚的底部。  Further, the eddy current sensor is disposed at the bottom of the crucible in the polycrystalline silicon ingot furnace.
进一步地， 涡流传感器包括外壳、 外壳内的骨架和缠绕在骨架上的 线圏； 线圏包括同心同轴布置的发射线圏和补偿线圏以及与发射线圏和 补偿线圏轴向间隔且同轴布置的接收线圏； 其中， 发射线圏、 补偿线圏 和接收线圏的导线设置在骨架的线槽中。  Further, the eddy current sensor comprises an outer casing, a skeleton in the outer casing and a coil wound around the skeleton; the coil includes a concentric coaxially arranged emission coil and a compensation coil and is axially spaced from the emission coil and the compensation coil The receiving line of the shaft arrangement; wherein the wires of the transmitting line 补偿, the compensation line 圏 and the receiving line 设置 are arranged in the slot of the skeleton.
进一步地， 骨架包括同心同轴， 由内向外依次布置的内层骨架、 中 层骨架和外层骨架， 发射线圏的导线绕制在外层骨架的线槽中， 补偿线 圏的导线绕制在中层骨架或内层骨架的线槽中， 以及接收线圏的导线绕 制在内层骨架、 中层骨架和外层骨架的线槽中。  Further, the skeleton comprises a concentric coaxial, an inner layer skeleton, a middle layer skeleton and an outer layer skeleton which are sequentially arranged from the inside to the outside, and the wires of the emission line are wound in the wire grooves of the outer layer skeleton, and the wires of the compensation wire turns are wound in the middle layer The wire grooves of the skeleton or the inner layer skeleton, and the wires receiving the wire turns are wound in the wire grooves of the inner layer skeleton, the middle layer skeleton, and the outer layer skeleton.
进一步地， 骨架包括同心同轴， 由内向外依次布置的内层骨架、 中 层骨架和外层骨架， 发射线圏的导线绕制在外层骨架和中层骨架的线槽 中， 补偿线圏的导线绕制在内层骨架的线槽中， 以及接收线圏的导线绕 制在内层骨架、 中层骨架和外层骨架的线槽中。 Further, the skeleton comprises a concentric coaxial, an inner layer skeleton, a middle layer skeleton and an outer layer skeleton which are sequentially arranged from the inner side to the outer side, and the wire of the emission line turns around the wire groove of the outer layer skeleton and the middle layer skeleton The wire of the compensation wire turns into the wire groove of the inner layer skeleton, and the wire of the receiving wire turns into the wire groove of the inner layer skeleton, the middle layer skeleton and the outer layer skeleton.
进一步地， 发射线圏和补偿线圏的导线的绕制方向相反。  Further, the winding of the transmitting wire 补偿 and the compensation wire 相反 is opposite in the winding direction.
进一步地， 线槽的截面形状为弧形或 U形。  Further, the cross-sectional shape of the wire groove is curved or U-shaped.
进一步地， 涡流传感器从下往上依次穿过坩埚的定向凝固块和石墨 防护板。  Further, the eddy current sensor sequentially passes through the directional solidified block of the crucible and the graphite shield from bottom to top.
进一步地， 还包括位于多晶硅铸锭炉外的电气室， 信号处理机设置 在电气室内， 涡流传感器与信号处理机通过信号电缆连接。  Further, an electric chamber is disposed outside the polycrystalline silicon ingot furnace, the signal processor is disposed in the electrical room, and the eddy current sensor and the signal processor are connected by a signal cable.
应用本发明的技术方案， 通过设置涡流传感器， 可以在线实时准确 地检测到多晶硅固液界面的高度， 从而控制多晶硅的长晶时机， 提高硅 锭的质量， 减少对籽晶的浪费， 降低硅锭的生产成本。 附图说明  By applying the technical solution of the invention, by setting the eddy current sensor, the height of the solid-liquid interface of the polysilicon can be accurately detected online, thereby controlling the crystal growth timing of the polysilicon, improving the quality of the silicon ingot, reducing the waste of the seed crystal, and reducing the silicon ingot. Production costs. DRAWINGS
构成本申请的一部分的说明书附图用来提供对本发明的进一步理 解， 本发明的示意性实施例及其说明用于解释本发明， 并不构成对本发 明的不当限定。 在附图中：  The accompanying drawings, which are incorporated in the claims of the claims In the drawing:
图 1示出了本发明一个实施例的多晶硅铸锭炉固液界面检测装置的 示意图； 以及  1 is a schematic view showing a solid-liquid interface detecting device for a polycrystalline silicon ingot furnace according to an embodiment of the present invention;
图 2示出了本发明一个实施例中的涡流传感器的示意图； 以及； 图 3示出了图 2中 A处的局部放大示意图。 具体实施方式 需要说明的是， 在不沖突的情况下， 本申请中的实施例及实施例中 的特征可以相互组合。 下面将参考附图并结合实施例来详细说明本发 明。 如图 1至图 3所示， 加热层 2设置在多晶硅铸锭炉 1的上部分， 承 载坩埚 5的定向凝固块 6设置在多晶硅铸锭炉 1的下部分， 坩埚 5的四 周设有石墨防护板 4用于支撑坩埚 5。少量的籽晶 3b铺放在坩埚 5内的 底层， 然后上方铺放满粗硅原料 3a。 用于检测多晶硅固液界面的涡流传 感器 7设置在多晶硅铸锭炉内坩埚 5的底部。 多晶硅的固态和液态的电 导率相差很大， 通过设置涡流传感器 7, 可以检测到多晶硅固液界面的 高度。 Fig. 2 is a schematic view showing an eddy current sensor in an embodiment of the present invention; and Fig. 3 is a partially enlarged schematic view showing a portion A in Fig. 2. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS It should be noted that the embodiments in the present application and the features in the embodiments may be combined with each other without conflict. The invention will be described in detail below with reference to the drawings in conjunction with the embodiments. As shown in FIGS. 1 to 3, the heating layer 2 is disposed in the upper portion of the polycrystalline silicon ingot furnace 1, the directional solidifying block 6 carrying the crucible 5 is disposed in the lower portion of the polycrystalline silicon ingot furnace 1, and graphite protection is provided around the crucible 5 The plate 4 is used to support the crucible 5. A small amount of seed crystal 3b is placed on the bottom layer in the crucible 5, and then the upper silicon raw material 3a is laid over. The eddy current sensor 7 for detecting the solid-liquid interface of the polysilicon is disposed at the bottom of the crucible 5 in the polycrystalline silicon ingot furnace. The conductivity of the solid state and the liquid state of the polycrystalline silicon differ greatly. By providing the eddy current sensor 7, the height of the solid-liquid interface of the polysilicon can be detected.
优选地， 在定向凝固块 6和石墨防护板 4开设有小孔， 涡流传感器 7从下往上依次穿过带有小孔的定向凝固块 6和石墨防护板 4设置在多 晶硅铸锭炉内坩埚 5的底部， 小孔的设置减少了涡流传感器 7到多晶硅 固液界面的阻碍， 有利于提高涡流传感器 7的灵敏度。 信号处理机 9设 置在多晶硅铸锭炉 1外的电气室内， 涡流传感器 7与信号处理机 9通过 信号电缆 8连接。  Preferably, the directional flow solidification block 6 and the graphite shield 4 are provided with small holes, and the eddy current sensor 7 is sequentially disposed from the bottom to the top through the directional solidified block 6 with small holes and the graphite shield 4 in the polycrystalline silicon ingot furnace. At the bottom of the 5, the arrangement of the small holes reduces the obstruction of the eddy current sensor 7 to the solid-liquid interface of the polysilicon, which is advantageous for improving the sensitivity of the eddy current sensor 7. The signal processor 9 is disposed in an electric room outside the polycrystalline silicon ingot furnace 1, and the eddy current sensor 7 is connected to the signal processor 9 via a signal cable 8.
参见图 2及图 3所示， 涡流传感器 7包括外壳 7c、 骨架和线圏， 该 线圏由同心同轴布置的发射线圏 7a2和补偿线圏 7a3以及与发射线圏 7a2 和补偿线圏 7a3间隔开同轴布置的接收线圏 7al组成，其中发射线圏 7a2、 补偿线圏 7a3和接受线圏 7al由棵导线绕制在骨架的线槽中。  Referring to FIGS. 2 and 3, the eddy current sensor 7 includes a casing 7c, a bobbin and a coil, which are concentrically arranged by the emission line 圏7a2 and the compensation line 圏7a3 and the emission line 圏7a2 and the compensation line 圏7a3. The receiving line 圏7al is arranged coaxially, wherein the transmitting line a7a2, the compensation line 圏7a3 and the receiving line 圏7al are wound by a wire in a wire slot of the skeleton.
优选地， 涡流传感器骨架包括同心同轴布置的内层骨架、 中层骨架 和外层骨架， 发射线圏 7a2由棵导线绕制在外层骨架 7bl的线槽中， 补 偿线圏 7a3绕制在中层骨架 7b2的线槽中以及接受线圏 7al由棵导线绕 制在各层骨架的线槽中。 可选地， 发射线圏 7a2由棵导线绕制在外层骨 架 7bl、 中层骨架 7b2的线槽中， 补偿线圏 7a3由棵导线绕制在内层骨 架 7b3的线槽中，以及接收线圏 7al由棵导线绕制在各层骨架的线槽中。  Preferably, the eddy current sensor skeleton comprises an inner layer skeleton, a middle layer skeleton and an outer layer skeleton which are concentrically arranged coaxially, and the emission line 圏 7a2 is wound by a wire in a wire groove of the outer layer skeleton 7b1, and the compensation wire 圏7a3 is wound in the middle layer skeleton The wire groove of 7b2 and the receiving wire 7a are wound by a wire in the wire groove of each layer skeleton. Optionally, the emission line 圏7a2 is wound by a wire in the wire slot of the outer layer skeleton 7b1 and the middle layer skeleton 7b2, and the compensation wire 圏7a3 is wound by the wire wire in the wire groove of the inner layer skeleton 7b3, and the receiving wire 圏7al The wires are wound in the wire grooves of the skeletons of the respective layers.
优选地， 线槽的截面形状为弧形或 U形， 有利于在有限的空间内设 置较多的线圏同时减薄每层线圏之间骨架的厚度， 进一步减少每层线圏 之间的阻碍， 提高线圏感应信号的能力。 Preferably, the cross-sectional shape of the wire groove is curved or U-shaped, which is advantageous for providing more wires in a limited space while thinning the thickness of the skeleton between each layer of turns, further reducing the thickness of each layer. The obstacle between the increase in the ability of the wire to sense the signal.
从以上的描述中， 可以看出， 本发明上述的实施例实现了如下技术 效果：  From the above description, it can be seen that the above-described embodiments of the present invention achieve the following technical effects:
1、 可在线实时准确地检测到多晶硅固液界面的高度， 控制多晶硅 的长晶时机， 提高硅锭的质量， 减少对籽晶的浪费， 降低硅锭的生产成 本。  1. The height of the solid-liquid interface of polysilicon can be accurately detected in real time online, the crystal growth timing of polysilicon can be controlled, the quality of silicon ingot can be improved, the waste of seed crystal can be reduced, and the production cost of silicon ingot can be reduced.
2、 用于检测多晶硅固液界面的涡流传感器的接受线圏绕制在内层 骨架、 中层骨架和外层骨架的线槽中， 增大了接受线圏接受在液态硅和 固态硅上感应涡电流的能力； 补偿线圏与发射线圏同心同轴布置且绕制 方向相反， 补偿线圏补偿了发射线圏的励磁电流在接受线圏中产生的背 景信号， 提高了信噪比即提高了固液界面检测的灵敏度和测程。  2. The receiving wire of the eddy current sensor for detecting the solid-liquid interface of the polysilicon is wound into the wire groove of the inner layer skeleton, the middle layer skeleton and the outer layer skeleton, and the receiving wire is increased to receive the induced vortex on the liquid silicon and the solid silicon. The ability of the current; the compensation line 圏 is coaxially arranged with the emission line 且 and the winding direction is opposite. The compensation line 圏 compensates the background signal generated by the excitation current of the emission line 接受 in the receiving line, and the signal-to-noise ratio is improved. Sensitivity and measurement of solid-liquid interface detection.
以上所述仅为本发明的优选实施例而已， 并不用于限制本发明， 对 于本领域的技术人员来说， 本发明可以有各种更改和变化。 凡在本发明 的精神和原则之内， 所作的任何修改、 等同替换、 改进等， 均应包含在 本发明的保护范围之内。  The above description is only a preferred embodiment of the present invention, and is not intended to limit the present invention, and various modifications and changes can be made to the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and scope of the present invention are intended to be included within the scope of the present invention.

Claims

权利要求书 claims
1、 一种多晶硅铸锭炉固液界面检测装置， 其特征在于， 包括： 涡流传感器（7) , 用于测量所述坩埚 （5) 内部的固液界面， 得到 关于固液界面高度的电信号； 1. A solid-liquid interface detection device for a polycrystalline silicon ingot furnace, characterized by comprising: an eddy current sensor (7), used to measure the solid-liquid interface inside the crucible (5) and obtain an electrical signal regarding the height of the solid-liquid interface. ;
信号处理机（9) , 与所述涡流传感器（7) 电连接， 用于通过所述 电信号得出固液界面的高度值。 A signal processor (9) is electrically connected to the eddy current sensor (7), and is used to obtain the height value of the solid-liquid interface through the electrical signal.
2、 根据权利要求 1所述的多晶硅铸锭炉固液界面检测装置， 其特征 在于， 所述涡流传感器（7)设置在多晶硅铸锭炉 （1) 内的坩埚 （5) 的底部。 2. The polycrystalline silicon ingot furnace solid-liquid interface detection device according to claim 1, characterized in that the eddy current sensor (7) is provided at the bottom of the crucible (5) in the polycrystalline silicon ingot furnace (1).
3、 根据权利要求 1所述的多晶硅铸锭炉固液界面检测装置， 其特征 在于， 所述涡流传感器（7) 包括外壳、 外壳内的骨架和缠绕在所述骨 架上的线圏； 所述线圏包括同心同轴布置的发射线圏（7a2)和补偿线圏 (7a3)以及与所述发射线圏 （7a2)和所述补偿线圏 （ 7a3 )轴向有间隔 且同轴布置的接收线圏 （7al) ； 其中， 所述发射线圏 （7a2) 、 所述补 偿线圏（7a3)和所述接收线圏（7al )的导线设置在所述骨架的线槽中。 3. The polycrystalline silicon ingot furnace solid-liquid interface detection device according to claim 1, characterized in that the eddy current sensor (7) includes a shell, a skeleton in the shell and a wire coil wound around the skeleton; The coil includes a transmitting coil (7a2) and a compensating coil (7a3) arranged concentrically and coaxially, and a receiving coil axially spaced and coaxially arranged with the transmitting coil (7a2) and the compensating coil (7a3). Coil (7a1); wherein, the conductors of the transmitting coil (7a2), the compensation coil (7a3) and the receiving coil (7a1) are arranged in the wire groove of the skeleton.
4、 根据权利要求 3所述的多晶硅铸锭炉固液界面检测装置， 其特征 在于， 所述骨架包括同心同轴， 由内向外依次布置的内层骨架（7b3) 、 中层骨架（7b2)和外层骨架（7bl) , 所述发射线圏 （7a2)的导线绕制 在所述外层骨架（7bl ) 的线槽中， 所述补偿线圏 （7a3) 的导线绕制在 所述中层骨架（7b2)或所述内层骨架（7b3) 的线槽中， 以及所述接收 线圏 （7al) 的导线绕制在所述内层骨架（7b3) 、 所述中层骨架（7b2) 和所述外层骨架（7bl ) 的线槽中。 4. The polycrystalline silicon ingot furnace solid-liquid interface detection device according to claim 3, characterized in that the skeleton includes an inner skeleton (7b3), a middle skeleton (7b2) and a concentric and coaxial inner skeleton (7b3), which are arranged sequentially from the inside to the outside. Outer frame (7bl), the conductors of the emission coil (7a2) are wound in the wire grooves of the outer frame (7bl), and the conductors of the compensation coil (7a3) are wound in the middle frame (7b2) or the wire trough of the inner skeleton (7b3), and the wires of the receiving coil (7a1) are wound around the inner skeleton (7b3) and the middle skeleton (7b2) and in the wire trough of the outer skeleton (7bl).
5、 根据权利要求 3所述的多晶硅铸锭炉固液界面检测装置， 其特征 在于， 所述骨架包括同心同轴， 由内向外依次布置的内层骨架（7b3) 、 中层骨架（7b2)和外层骨架（7bl) , 所述发射线圏 （7a2)的导线绕制 在所述外层骨架（7bl)和所述中层骨架（7b2) 的线槽中， 所述补偿线 圏 （7a3) 的导线绕制在所述内层骨架（7b3) 的线槽中， 以及所述接收 线圏 （7al ) 的导线绕制在所述内层骨架（7b3) 、 所述中层骨架（7b2) 和所述外层骨架（7bl ) 的线槽中。 5. The polycrystalline silicon ingot furnace solid-liquid interface detection device according to claim 3, characterized in that the skeleton includes an inner skeleton (7b3), a middle skeleton (7b2) and a concentric and coaxial inner skeleton (7b3), which are arranged sequentially from the inside to the outside. The outer skeleton (7bl), the conductors of the emission coil (7a2) are wound in the wire grooves of the outer skeleton (7bl) and the middle skeleton (7b2), and the compensation coil (7a3) The wires are wound in the wire trough of the inner frame (7b3), and the conductors of the receiving coil (7a1) are wound in the inner frame (7b3), the middle frame (7b2) and the In the wire trough of the outer skeleton (7bl).
6、 根据权利要求 3所述的多晶硅铸锭炉固液界面检测装置， 其特征 在于， 所述发射线圏 （7a2)和所述补偿线圏 （7a3) 的导线的绕制方向 相反。 6. The polycrystalline silicon ingot furnace solid-liquid interface detection device according to claim 3, characterized in that the winding directions of the conductors of the emission coil (7a2) and the compensation coil (7a3) are opposite.
7、 根据权利要求 3所述的多晶硅铸锭炉固液界面检测装置， 其特征 在于， 所述线槽的截面形状为弧形或 U形。 7. The polycrystalline silicon ingot furnace solid-liquid interface detection device according to claim 3, characterized in that the cross-sectional shape of the wire trough is arc-shaped or U-shaped.
8、 根据权利要求 1所述的多晶硅铸锭炉固液界面检测装置， 其特征 在于， 所述涡流传感器（7)从下往上依次穿过所述坩埚 （5) 的定向凝 固块（ 6 )和石墨防护板（ 4 ) 。 8. The polycrystalline silicon ingot furnace solid-liquid interface detection device according to claim 1, characterized in that the eddy current sensor (7) passes through the directional solidification block (6) of the crucible (5) from bottom to top. and graphite protective plates (4).
9、 根据权利要求 1所述的多晶硅铸锭炉固液界面检测装置， 其特征 在于， 还包括位于所述多晶硅铸锭炉 （1)外的电气室， 所述信号处理 机（9)设置在所述电气室内， 所述涡流传感器（7)与所述信号处理机 (9)通过信号电缆（8)连接。 9. The polycrystalline silicon ingot furnace solid-liquid interface detection device according to claim 1, characterized in that it further includes an electrical room located outside the polycrystalline silicon ingot furnace (1), and the signal processor (9) is provided in In the electrical room, the eddy current sensor (7) and the signal processor (9) are connected through a signal cable (8).
PCT/CN2013/086664 2012-11-14 2013-11-07 Solid liquid interface detection device for polysilicon ingot furnace WO2014075578A1 (en)

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