CN102372248A - 传感器模块和用于制造传感器模块的方法 - Google Patents

传感器模块和用于制造传感器模块的方法 Download PDF

Info

Publication number
CN102372248A
CN102372248A CN2011101877479A CN201110187747A CN102372248A CN 102372248 A CN102372248 A CN 102372248A CN 2011101877479 A CN2011101877479 A CN 2011101877479A CN 201110187747 A CN201110187747 A CN 201110187747A CN 102372248 A CN102372248 A CN 102372248A
Authority
CN
China
Prior art keywords
integrated circuit
contact
electric component
microcomputer electric
supporting body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN2011101877479A
Other languages
English (en)
Other versions
CN102372248B (zh
Inventor
U.沙夫
A.库格勒
M.布鲁恩德尔
F.孙德迈尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of CN102372248A publication Critical patent/CN102372248A/zh
Application granted granted Critical
Publication of CN102372248B publication Critical patent/CN102372248B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00Arrangements or instruments for measuring magnetic variables
    • G01R33/0052Manufacturing aspects; Manufacturing of single devices, i.e. of semiconductor magnetic sensor chips
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00023Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/02Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261Processes for packaging MEMS devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261Processes for packaging MEMS devices
    • B81C1/00333Aspects relating to packaging of MEMS devices, not covered by groups B81C1/00269 - B81C1/00325
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01DMEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D21/00Measuring or testing not otherwise provided for
    • G01D21/02Measuring two or more variables by means not covered by a single other subclass
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802Details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00Specific applications of microelectromechanical systems
    • B81B2201/02Sensors
    • B81B2201/0228Inertial sensors
    • B81B2201/0235Accelerometers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00Specific applications of microelectromechanical systems
    • B81B2201/02Sensors
    • B81B2201/0264Pressure sensors
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00Specific applications of microelectromechanical systems
    • B81B2201/02Sensors
    • B81B2201/0292Sensors not provided for in B81B2201/0207 - B81B2201/0285
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2207/00Microstructural systems or auxiliary parts thereof
    • B81B2207/01Microstructural systems or auxiliary parts thereof comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS
    • B81B2207/012Microstructural systems or auxiliary parts thereof comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS the micromechanical device and the control or processing electronics being separate parts in the same package
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00Forming microstructural systems
    • B81C2203/01Packaging MEMS
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00Forming microstructural systems
    • B81C2203/01Packaging MEMS
    • B81C2203/0154Moulding a cap over the MEMS device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909Post-treatment of the connector or wire bonding area
    • H01L2224/8592Applying permanent coating, e.g. protective coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Pressure Sensors (AREA)

Abstract

本发明涉及传感器模块和用于制造传感器模块的方法。本发明涉及一种用于制造用于测量加速度、压力或者磁场等等的传感器模块的方法。该方法包括以下步骤:将至少一个微机电元件设置在第一集成电路上;借助金属承载体的接触面、尤其是借助引线键合至少接触微机电元件;将至少集成电路并且尤其是引线键合包封;以及借助至少一个重新布线层、尤其是借助接触面来至少接触集成电路。

Description

传感器模块和用于制造传感器模块的方法
技术领域
本发明涉及一种用于制造传感器模块的方法以及一种相应的传感器模块,所述传感器模块用于测量加速度、压力或者磁场等等。
用于测量加速度、压力或者磁场的传感器模块尤其是使用在机动车领域中。作为加速度传感器,其例如与机动车中的主动悬挂系统一同工作。加速度传感器的另一应用领域是碰撞测试,其中这些加速度传感器使用在假人中。
背景技术
由EP 1 923 627 A1公开了一种用于制造发光二极管模块的方法。在此,使用金属承载带,多个带有发光二极管芯片的发光二极管模块可以安装在其上。承载带具有多个平行的安装接片,安装开口分别引入到这些安装接片中。借助安装开口,可以将承载带安装在壳体中。此外,在两个接片之间通过薄的保持臂保持承载元件。在承载元件的表面上例如借助焊接施加有发光二极管模块。发光二极管模块此外包括连接印制电路板,其与用于激励发光二极管模块的控制单元连接。
发明内容
用于制造用于测量加速度、压力或者磁场等等的传感器模块的方法包括以下步骤:
·将金属承载体施加到临时承载体上,
·将至少一个集成电路至少间接地、尤其是直接地设置在临时承载体上,
·将至少一个微机电元件至少间接地设置在临时承载体上,
·尤其是借助金属承载体的接触面、优选借助引线键合至少接触该微机电元件,
·将至少该集成电路和/或微机电元件和/或尤其是引线键合包封,以及
·借助至少一个重新布线层(Umverdrahtungsschicht)、尤其是借助接触面来接触至少第一集成电路。
传感器模块尤其是借助根据权利要求1-7至少之一的方法来制造,包括:
·至少一个接触面,尤其是金属承载体;
·至少一个集成电路;
·至少一个微机电元件;
·尤其是引线键合形式的接触部,用于借助至少一个接触面来电接触微机电元件;
·重新布线层,用于将集成电路与至少一个接触面接触,
其中尤其是该微机电元件设置在集成电路上。
在权利要求1中限定的用于制造用于测量加速度、压力或者磁场等等的传感器模块的方法以及相应的根据权利要求8的传感器模块具有的优点是:它们能够实现在制造传感器模块时、尤其是在设置不同的集成电路和微机电元件时明显更高的灵活性。由此,例如所谓的芯片堆叠也更简单地成为可能,因为为此不再需要穿通接触部等等。通过使用金属承载体(也称为引线框架)的接触面(所谓的接合区(Land)),例如更厚的铜面用于焊上集成电路或者微机电元件也是可能的。这明显提高了相应的焊接连接的可靠性并且由此总体上提高了传感器模块的可靠性。
接触面至接下来的印制电路板的接触或者接通(Kontaktierung)于是可以借助已知的和标准化的焊接方法或者粘合方法来实现。
根据本发明的另一有利的改进方案,微机电元件设置在集成电路上。在此的优点是,由此能够实现简单并且成本低廉地固定微机电元件。同时,降低了将集成电路和/或微机电元件设置在临时承载体上的位置要求。
根据本发明的另一有利的改进方案,重新布线层借助喷射、电镀或者等离子体支持的粉末轰击来制造。在此的优点是,可以使用简单并且成本低廉的方法,使得借助重新布线层提高了接通的可靠性。
根据本发明的另一有利的改进方案,借助压铸、优选借助传递模塑或者片料模塑(Sheetmolden)来进行包封。在此的优点是,可以使用简单、成本低廉并且被证明的方法来包封(Einhausen),即用于包覆或者封闭,使得可以简单并且可靠地制造传感器模块。
根据本发明的另一有利的改进方案,金属承载体临时地施加到至少一个单侧粘附的膜上。在此的优点是,不必使用附加的、持久的承载体基底,并且于是可以节省材料并且由此也节约成本。此外,膜也可以又简单并且无残留物地被去除,使得并不产生附加的步骤用于费事地修改金属承载体。此外可能的是,如果留有残留物,则进行净化步骤。
根据本发明的另一有利的改进方案,将多个传感器模块设置在金属承载带框架上。在此的优点是,可以连续并且快速地制造多个传感器模块,这明显降低了单个传感器模块的制造成本。
根据本发明的另一有利的改进方案,将传感器模块分割,尤其是通过锯割来分割。在此的优点是,其由此可以以简单并且快速的方式来分割,并且于是直接用于进一步处理并且由此也更快地用于安装到车辆中。
附图说明
在附图中示出了本发明的实施例,并且在下面的描述中进一步阐述。其中:
图1至图7示出了根据本发明的第一实施形式(图5a)和第二实施形式(图5b)的传感器模块的制造步骤;
图8示出了具有根据本发明的第一和第二实施形式的传感器模块的不同实施形式的金属承载体;以及
图9示出了根据本发明的第三实施形式的传感器模块。
具体实施方式
在附图中,只要没有另外说明,则相同的附图标记表示相同的或者功能相同的元件。
图1至图7示出了根据本发明的第一实施形式(图5a)和第二实施形式(图5b)的传感器模块的制造步骤。
在图1中示出了金属承载框架带或者所谓的引线框架2的原理图,其借助接触面、所谓的接合区 1来预先结构化。从左向右可以看到四个并排设置的所谓有用部N,其分别包括多个接合区 1。借助每个有用部N可以制造一个或者多个传感器模块M。在根据图8分割之后,于是有多个带有接合区 1的金属承载框架2和带有相应的集成电路3a和微机电元件3b等的传感器模块M(参见图8和9)可供使用。
以下将根据图2-7和9描述单个传感器模块M的制造。
在图2中示出了粘附薄膜K,其或者单侧地具有粘附层,以便粘附引线框架2,或者两侧粘附地构建,以便附加地还与承载基底T连接。如果没有设置承载基底T的话,该可揭除的粘附薄膜K本身用作临时承载体。如果使用承载基底T,则粘附薄膜K在此也可揭除地设置在承载基底T上。为了制造传感器模块M,现在将预先结构化的、具有接合区 1的金属的承载框架2施加到粘附薄膜K的粘附层上(图3)。在此,粘附薄膜K也可以直接层压到金属承载框架2上。
在随后的图4至图9中,现在不再示出承载体T,或者说示出没有承载基底T的传感器模块M的制造。在设置于粘附薄膜K的粘附侧上的接合区 1之间现在施加集成电路3a,其包括有源面A1。在该集成电路3a的上侧上借助粘附连接物5(例如以粘附膜的形式、以膏的形式等等)施加微机电元件3b,包括有源层A2。两个有源面A1、A2具有相应的端子(未示出)用于接通相应的集成电路3a或者微机电元件3b。粘附连接物5随后被相应地硬化。
当然,替代微机电元件3b也可以设置另外的集成电路。
在图5a中,不同于图4,现在微机电元件3b并不借助粘附连接物5间接地设置在集成电路3a上,而是分离地在两个接合区 1之间施加在粘附薄膜K上。微机电元件3b的有源面A2在此借助引线键合6与接合区 1电连接。集成电路3a以其有源面A1设置在粘附薄膜K上。图5b示出了集成电路3a和微机电元件3b的根据图4的相应结构(Aufbauf),其中附加地现在微机电元件3b的有源面A2、更确切地说其端子借助引线键合6与接合区 1连接用于电接通。
图6现在示出了在完成包覆之后根据图5b的类似结构,即至少接合区 1、集成电路3a、微机电元件3b以及引线键合6现在设置在壳体7中。粘附薄膜K在此以其上侧、即在其上设置有接合区 1、集成电路3a等等的侧上同样与壳体7可揭除地连接。
在图7中现在示出了在根据图6的布置情况下去除粘附薄膜K。粘附薄膜K,为此,设置在接合区 1或者壳体7的下侧上地,朝着方向R被简单地拉下。在此,粘附薄膜K的去除同样可以在升高的温度情况下进行,以便使得去除粘附薄膜K变得容易。这样在壳体7或者接合区 1的下侧上的暴露的面于是可以(如果这应是必需的)被清洁并且必要时借助等离子体来活化。在最后的步骤中,现在可以将重新布线层8(参见图9)安置在接合区 1的下侧上或者集成电路3a的有源面A1上,以便将有源面A1、更确切地说其端子与接合区 1相应地电连接。附加地,在接合区 1上还可以实现焊料球或者粘合点9用于将接合区 1与另外的接触部、例如印制电路板的接触部接通,尤其是用于以方形扁平无引脚封装(Quad Flat No lead,QFN)来使用。
图8最后示出了根据图1的相应的金属承载框架带2,现在带有所施加的集成电路和微机电元件3a1-3a6。在有用部N上在此可以设置不同的集成电路并且也相应地不同地借助重新布线层8与接合区 1接触。于是,在两个外部的有用部上、即根据图8在左边和右边外部,设置有两个不同的集成电路3a1、3a2,它们借助重新布线层8与不同的接合区 1电连接。在根据图8所示从左边数的第三有用部上仅仅示出了一个单个的集成电路3a4,其借助重新布线层8与不同的接合区 1连接。
此外,在图8中示出了在水平方向上相邻的两个有用部N之间的虚线绘出的垂直走向的线L1。沿着该线L1,将有用部N彼此分离。接着,将各传感器模块M彼此分离,其方式是进一步锯割有用部N,使得集成电路3a1至3a6以及与其连接的接合区 1于是形成一个或者多个传感器模块M:根据图8从左边的第二个有用部N例如可以沿着垂直线L2锯割,使得形成具有相应的集成电路3a3的两个基本上相同的传感器模块M1、M2。
总之,于是可能的是,分别在有用部上设置多个集成电路,其在将相应的有用部从承载框架带分割之后还可以被分割为一个或者多个传感器模块M。当然可能的是,借助锯割将有用部也在水平方向或者也在任何合适的其他方向上进行分割。
随后,每个传感器模块M还可以在规定的功能方面进行测试。
虽然本发明在前面借助优选的实施例进行了描述,然而其并不局限于此,而是可以以多种方式修改。

Claims (9)

1.一种用于制造用于测量加速度、压力或者磁场等等的传感器模块(M)的方法,包括以下步骤:
·将金属承载体(2)施加到临时承载体(K)上,
·将至少一个集成电路(3a)至少间接地、尤其是直接地设置在该临时承载体(K)上,
·将至少一个微机电元件(3b)至少间接地设置在该临时承载体上(K),
·尤其是借助金属承载体(2)的接触面(1)、优选借助引线键合(6)接触至少该微机电元件(3b),
·将至少该集成电路(3a)和/或微机电元件(3b)和/或尤其是引线键合(6)包封(7),以及
·借助至少一个重新布线层(8)、尤其是借助接触面(1)来接触至少该集成电路(3a)。
2.根据权利要求1所述的方法,其中该微机电元件(3b)设置在该集成电路(3a)上。
3.根据至少权利要求1所述的方法,其中该重新布线层(8)借助喷射、电镀或者等离子体支持的粉末轰击来制造。
4.根据至少权利要求1所述的方法,其中借助压铸、优选借助传递模塑或者片料模塑来进行包封(7)。
5.根据至少权利要求1所述的方法,其中该临时承载体(K)是至少单侧粘附的可揭除的薄膜(K)。
6.根据至少权利要求1所述的方法,其中将多个传感器模块(M)设置在金属承载带框架(2)上。
7.根据权利要求6所述的方法,其中将这些传感器模块(M)分割,尤其是通过锯割来分割。
8.一种传感器模块(M),尤其是借助根据权利要求1-7至少之一的方法来制造的传感器模块,包括:
·至少一个接触面(1),尤其是金属承载体(2);
·至少一个集成电路(3a);
·至少一个微机电元件(3b);
·尤其是引线键合(6)的形式的接触部,用于借助至少一个接触面(1)来电接通微机电元件(3b);
·重新布线层(8),用于将集成电路(3a)与至少一个接触面(1)接通,其中该微机电元件(3b)尤其是设置在集成电路(3a)上。
9.一种应用,将引线键合(6)用于接通微机电元件(3b),该微机电元件(3b)尤其是设置在集成电路(3a)上,和/或将重新布线层(8)用于分别借助至少一个接触面(1)、尤其是金属承载体(2)的接触面来接通集成电路(3a)。
CN201110187747.9A 2010-07-07 2011-07-06 传感器模块和用于制造传感器模块的方法 Active CN102372248B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102010031055.7A DE102010031055B4 (de) 2010-07-07 2010-07-07 Sensormodul und Verfahren zum Herstellen eines Sensormoduls
DE102010031055.7 2010-07-07

Publications (2)

Publication Number Publication Date
CN102372248A true CN102372248A (zh) 2012-03-14
CN102372248B CN102372248B (zh) 2016-12-14

Family

ID=

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103663362A (zh) * 2012-08-29 2014-03-26 飞思卡尔半导体公司 传感器封装方法以及传感器封装
CN103848391A (zh) * 2012-12-05 2014-06-11 英飞凌科技股份有限公司 嵌入式芯片封装、芯片封装和制备嵌入式芯片封装的方法
CN105293421A (zh) * 2014-05-30 2016-02-03 日月光半导体制造股份有限公司 微机电感测装置封装结构及制造工艺
CN107580533A (zh) * 2014-12-18 2018-01-12 伊利诺斯工具制品有限公司 用于焊接电缆的固态传感器测量的系统和方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1222252A (zh) * 1996-04-18 1999-07-07 德塞拉股份有限公司 制造半导体封装的方法
US6100594A (en) * 1998-01-14 2000-08-08 Sharp Kabushiki Kaisha Semiconductor device and method of manufacturing the same
JP2006032940A (ja) * 2004-07-06 2006-02-02 Samsung Electronics Co Ltd 半導体素子の超薄型モジュール構造及びその製造方法
CN101095229A (zh) * 2004-12-30 2007-12-26 罗伯特·博世有限公司 结构化的引线框架
US7407834B2 (en) * 2001-05-11 2008-08-05 Renesas Technology Corp. Manufacturing method of a semiconductor device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1222252A (zh) * 1996-04-18 1999-07-07 德塞拉股份有限公司 制造半导体封装的方法
US6100594A (en) * 1998-01-14 2000-08-08 Sharp Kabushiki Kaisha Semiconductor device and method of manufacturing the same
US7407834B2 (en) * 2001-05-11 2008-08-05 Renesas Technology Corp. Manufacturing method of a semiconductor device
JP2006032940A (ja) * 2004-07-06 2006-02-02 Samsung Electronics Co Ltd 半導体素子の超薄型モジュール構造及びその製造方法
CN101095229A (zh) * 2004-12-30 2007-12-26 罗伯特·博世有限公司 结构化的引线框架

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103663362A (zh) * 2012-08-29 2014-03-26 飞思卡尔半导体公司 传感器封装方法以及传感器封装
CN103663362B (zh) * 2012-08-29 2016-12-28 飞思卡尔半导体公司 传感器封装方法以及传感器封装
CN103848391A (zh) * 2012-12-05 2014-06-11 英飞凌科技股份有限公司 嵌入式芯片封装、芯片封装和制备嵌入式芯片封装的方法
CN103848391B (zh) * 2012-12-05 2017-05-17 英飞凌科技股份有限公司 嵌入式芯片封装、芯片封装和制备嵌入式芯片封装的方法
CN105293421A (zh) * 2014-05-30 2016-02-03 日月光半导体制造股份有限公司 微机电感测装置封装结构及制造工艺
CN107580533A (zh) * 2014-12-18 2018-01-12 伊利诺斯工具制品有限公司 用于焊接电缆的固态传感器测量的系统和方法
US10449614B2 (en) 2014-12-18 2019-10-22 Illinois Tool Works Inc. Systems and methods for solid state sensor measurements of welding cables

Also Published As

Publication number Publication date
DE102010031055B4 (de) 2023-02-23
KR20120004936A (ko) 2012-01-13
KR101864577B1 (ko) 2018-07-13
DE102010031055A1 (de) 2012-01-12

Similar Documents

Publication Publication Date Title
CN102420217B (zh) 多芯片半导体封装体及其组装
US7808060B2 (en) MEMS microphone module and method thereof
CN102789994B (zh) 侧面可浸润半导体器件
KR101699406B1 (ko) 미소기전 시스템 마이크로폰 패키징 시스템
US9986354B2 (en) Pre-mold for a microphone assembly and method of producing the same
CN104064486A (zh) 半导体装置以及层叠型半导体装置的制造方法
US9153706B2 (en) Film-covered open-cavity sensor package
CN104661164A (zh) 半导体器件以及形成半导体器件的方法
WO2006109566A1 (ja) 半導体装置
KR102047899B1 (ko) 기판 어댑터를 제조하기 위한 방법, 기판 어댑터, 및 반도체 소자와 접촉시키기 위한 방법
KR20150109284A (ko) 반도체 장치 및 그 제조 방법
KR101058986B1 (ko) 수지 밀봉형 반도체 장치와 그 제조 방법, 반도체 장치용 기재 및 적층형 수지 밀봉형 반도체 장치
EP2733727B1 (en) Packaging method of quad flat non-leaded package
JP3109847U (ja) 特性インピーダンスを低減できる樹脂パッケージ半導体装置
US9472528B2 (en) Integrated electronic package and method of fabrication
CN102270589B (zh) 半导体元件的制造方法和相应的半导体元件
US7838972B2 (en) Lead frame and method of manufacturing the same, and semiconductor device
CN102372248A (zh) 传感器模块和用于制造传感器模块的方法
JPH03250756A (ja) 半導体素子の外部リードの成型方法
CN102372248B (zh) 传感器模块和用于制造传感器模块的方法
CN103208467A (zh) 内嵌封装体的封装模块及其制造方法
CN108508283B (zh) 电场传感器封装组件及其批量化制造方法
JP2001257304A (ja) 半導体装置およびその実装方法
JP2004266109A (ja) Icカード用回路基板及びicモジュールとその製造方法
CN214672613U (zh) 一种扇出型封装结构

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant