CN102369315B - 包含抑制剂的无空隙亚微米结构填充用金属电镀组合物 - Google Patents

包含抑制剂的无空隙亚微米结构填充用金属电镀组合物 Download PDF

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Publication number
CN102369315B
CN102369315B CN201080015460.1A CN201080015460A CN102369315B CN 102369315 B CN102369315 B CN 102369315B CN 201080015460 A CN201080015460 A CN 201080015460A CN 102369315 B CN102369315 B CN 102369315B
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CN
China
Prior art keywords
composition
copper
inhibitor
metal
alkylene
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CN201080015460.1A
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English (en)
Chinese (zh)
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CN102369315A (zh
Inventor
C·勒格尔-格普费特
R·B·雷特尔
C·埃姆内特
A·哈格
D·迈耶
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BASF SE
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BASF SE
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/56—Electroplating: Baths therefor from solutions of alloys
    • C25D3/58—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of copper
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42—Plated through-holes or plated via connections
    • H05K3/423—Plated through-holes or plated via connections characterised by electroplating method

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrochemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Electroplating Methods And Accessories (AREA)
CN201080015460.1A 2009-04-07 2010-03-29 包含抑制剂的无空隙亚微米结构填充用金属电镀组合物 Active CN102369315B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410322845.2A CN104195602B (zh) 2009-04-07 2010-03-29 包含抑制剂的无空隙亚微米结构填充用金属电镀组合物

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
EP09157542.3 2009-04-07
EP09157542 2009-04-07
US25632909P 2009-10-30 2009-10-30
US61/256329 2009-10-30
PCT/EP2010/054108 WO2010115756A1 (en) 2009-04-07 2010-03-29 Composition for metal plating comprising suppressing agent for void free submicron feature filling

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201410322845.2A Division CN104195602B (zh) 2009-04-07 2010-03-29 包含抑制剂的无空隙亚微米结构填充用金属电镀组合物

Publications (2)

Publication Number Publication Date
CN102369315A CN102369315A (zh) 2012-03-07
CN102369315B true CN102369315B (zh) 2014-08-13

Family

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CN201080015460.1A Active CN102369315B (zh) 2009-04-07 2010-03-29 包含抑制剂的无空隙亚微米结构填充用金属电镀组合物
CN201410322845.2A Active CN104195602B (zh) 2009-04-07 2010-03-29 包含抑制剂的无空隙亚微米结构填充用金属电镀组合物

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Country Status (11)

Country Link
US (1) US20120027948A1 (https=)
EP (1) EP2417284B1 (https=)
JP (1) JP5702360B2 (https=)
KR (2) KR20120005023A (https=)
CN (2) CN102369315B (https=)
IL (1) IL215017A (https=)
MY (1) MY157214A (https=)
RU (1) RU2542178C2 (https=)
SG (2) SG174265A1 (https=)
TW (1) TWI489012B (https=)
WO (1) WO2010115756A1 (https=)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200632147A (https=) 2004-11-12 2006-09-16
MY157126A (en) 2009-07-30 2016-05-13 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
US9834677B2 (en) 2010-03-18 2017-12-05 Basf Se Composition for metal electroplating comprising leveling agent
EP2468927A1 (en) 2010-12-21 2012-06-27 Basf Se Composition for metal electroplating comprising leveling agent
MY170653A (en) * 2010-12-21 2019-08-23 Basf Se Composition for metal electroplating comprising leveling agent
US9631292B2 (en) 2011-06-01 2017-04-25 Basf Se Composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias and interconnect features
EP2530102A1 (en) 2011-06-01 2012-12-05 Basf Se Additive and composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias
US9243339B2 (en) * 2012-05-25 2016-01-26 Trevor Pearson Additives for producing copper electrodeposits having low oxygen content
MY172822A (en) 2012-11-09 2019-12-12 Basf Se Composition for metal electroplating comprising leveling agent
WO2014081693A1 (en) 2012-11-21 2014-05-30 3M Innovative Properties Company Optical diffusing films and methods of making same
JP6216522B2 (ja) * 2013-03-14 2017-10-18 大日本印刷株式会社 インターポーザー基板の製造方法。
JP6457881B2 (ja) * 2015-04-22 2019-01-23 新光電気工業株式会社 配線基板及びその製造方法
EP3516096A4 (en) * 2016-09-22 2020-10-21 MacDermid Enthone Inc. MICROELECTRONIC COPPER ELECTRODEPOSITION
WO2018073011A1 (en) 2016-10-20 2018-04-26 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
CN110100048B (zh) * 2016-12-20 2022-06-21 巴斯夫欧洲公司 包含用于无空隙填充的抑制试剂的用于金属电镀的组合物
ES2761883T3 (es) * 2017-06-16 2020-05-21 Atotech Deutschland Gmbh Baño de galvanoplastia de cobre ácido acuoso y método para depositar electrolíticamente un revestimiento de cobre
KR102641595B1 (ko) 2017-09-04 2024-02-27 바스프 에스이 평탄화 제제를 포함하는 금속 전기 도금용 조성물
SG11202009106XA (en) 2018-04-20 2020-11-27 Basf Se Composition for tin or tin alloy electroplating comprising suppressing agent
WO2021058336A1 (en) 2019-09-27 2021-04-01 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
EP4034696A1 (en) 2019-09-27 2022-08-03 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
CN114073170B (zh) 2020-04-01 2025-01-03 住友电气工业株式会社 柔性印刷布线板及其制造方法
KR20220164496A (ko) 2020-04-03 2022-12-13 바스프 에스이 폴리아미노아미드 유형 레벨링제를 포함하는 구리 범프 전착용 조성물
EP3922662A1 (en) 2020-06-10 2021-12-15 Basf Se Polyalkanolamine
KR20240070557A (ko) 2021-10-01 2024-05-21 바스프 에스이 폴리아미노아미드 타입 레벨링제를 포함하는 구리 전착용 조성물
TWI861453B (zh) 2021-12-21 2024-11-11 隆輝實業股份有限公司 環保無廢料的發泡鞋材製程方法，及其鞋材半成品與鞋體成品
US20250388725A1 (en) 2022-07-07 2025-12-25 Basf Se Use of a composition comprising a polyaminoamide type compound for copper nanotwin electrodeposition
US12557666B2 (en) * 2022-11-28 2026-02-17 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing conductive structure, method of manufacturing redistribution circuit structure and method of manufacturing semiconductor package
CN120457244A (zh) 2022-12-19 2025-08-08 巴斯夫欧洲公司 用于铜纳米孪晶电沉积的组合物

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060213780A1 (en) * 2005-03-24 2006-09-28 Taiwan Semiconductor Manufacturing Co., Ltd. Electroplating composition and method
CN101099231A (zh) * 2004-11-12 2008-01-02 恩索恩公司 微电子中的铜电沉积

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4139425A (en) * 1978-04-05 1979-02-13 R. O. Hull & Company, Inc. Composition, plating bath, and method for electroplating tin and/or lead
US4505839A (en) 1981-05-18 1985-03-19 Petrolite Corporation Polyalkanolamines
US4347108A (en) 1981-05-29 1982-08-31 Rohco, Inc. Electrodeposition of copper, acidic copper electroplating baths and additives therefor
US5051154A (en) 1988-08-23 1991-09-24 Shipley Company Inc. Additive for acid-copper electroplating baths to increase throwing power
DE4003243A1 (de) 1990-02-03 1991-08-08 Basf Ag Verwendung von trialkanolaminpolyethern als demulgatoren von oel-in-wasser-emulsionen
DE19622221A1 (de) * 1996-06-03 1997-12-04 Henkel Kgaa Verfahren zur Beschichtung elektrisch leitfähiger Substrate
US6444110B2 (en) 1999-05-17 2002-09-03 Shipley Company, L.L.C. Electrolytic copper plating method
US20040045832A1 (en) * 1999-10-14 2004-03-11 Nicholas Martyak Electrolytic copper plating solutions
JP3610434B2 (ja) * 2002-02-06 2005-01-12 第一工業製薬株式会社 非イオン界面活性剤
JP2003328179A (ja) * 2002-05-10 2003-11-19 Ebara Udylite Kk 酸性銅めっき浴用添加剤及び該添加剤を含有する酸性銅めっき浴並びに該めっき浴を用いるめっき方法
CN1190521C (zh) * 2002-07-05 2005-02-23 旺宏电子股份有限公司 铜电镀溶液及铜电镀方法
RU2237755C2 (ru) * 2002-07-25 2004-10-10 Калининградский государственный университет Электролит меднения стальных деталей
US6833479B2 (en) 2002-08-16 2004-12-21 Cognis Corporation Antimisting agents
JP3804788B2 (ja) * 2002-11-18 2006-08-02 荏原ユージライト株式会社 クローズド酸性銅めっきシステムおよびこれに利用される耐温性酸性銅めっき浴
US7147767B2 (en) * 2002-12-16 2006-12-12 3M Innovative Properties Company Plating solutions for electrochemical or chemical deposition of copper interconnects and methods therefor
US20050072683A1 (en) 2003-04-03 2005-04-07 Ebara Corporation Copper plating bath and plating method
US20050045485A1 (en) 2003-09-03 2005-03-03 Taiwan Semiconductor Manufacturing Co. Ltd. Method to improve copper electrochemical deposition
RU2334831C2 (ru) * 2006-10-31 2008-09-27 Федеральное государственное унитарное предприятие "Калужский научно-исследовательский институт телемеханических устройств" Электролит меднения
JP5503111B2 (ja) * 2007-04-03 2014-05-28 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 金属メッキ組成物および方法
CU23716A1 (es) * 2008-09-30 2011-10-05 Ct Ingenieria Genetica Biotech Péptido antagonista de la actividad de la interleucina-15
US8388824B2 (en) * 2008-11-26 2013-03-05 Enthone Inc. Method and composition for electrodeposition of copper in microelectronics with dipyridyl-based levelers
US20120018310A1 (en) * 2009-04-07 2012-01-26 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101099231A (zh) * 2004-11-12 2008-01-02 恩索恩公司 微电子中的铜电沉积
US20060213780A1 (en) * 2005-03-24 2006-09-28 Taiwan Semiconductor Manufacturing Co., Ltd. Electroplating composition and method

Also Published As

Publication number Publication date
CN104195602B (zh) 2017-05-31
IL215017A0 (en) 2011-12-01
TW201042096A (en) 2010-12-01
TWI489012B (zh) 2015-06-21
EP2417284B1 (en) 2015-01-14
US20120027948A1 (en) 2012-02-02
JP2012522898A (ja) 2012-09-27
EP2417284A1 (en) 2012-02-15
IL215017A (en) 2016-03-31
RU2011144618A (ru) 2013-05-20
SG174265A1 (en) 2011-10-28
CN102369315A (zh) 2012-03-07
WO2010115756A1 (en) 2010-10-14
CN104195602A (zh) 2014-12-10
MY157214A (en) 2016-05-13
JP5702360B2 (ja) 2015-04-15
KR20170034948A (ko) 2017-03-29
KR20120005023A (ko) 2012-01-13
RU2542178C2 (ru) 2015-02-20
SG10201401324YA (en) 2014-08-28

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