CN102365734A - 电子电路的压力支撑 - Google Patents
电子电路的压力支撑 Download PDFInfo
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- CN102365734A CN102365734A CN2010800155021A CN201080015502A CN102365734A CN 102365734 A CN102365734 A CN 102365734A CN 2010800155021 A CN2010800155021 A CN 2010800155021A CN 201080015502 A CN201080015502 A CN 201080015502A CN 102365734 A CN102365734 A CN 102365734A
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Abstract
本发明提供一种包含一电路的电路结构,所述电路具有至少一个安装在一衬底上的电子部件和一用于对所述部件进行电接触的平面导电通路,其中,所述电路上设有一弹性元件,此外还设有一装置,所述装置用于向所述弹性元件施加一作用力以将所述弹性元件压向所述电路。借此防止所述部件下方的焊料中形成裂纹。
Description
技术领域
本发明涉及一种包含一电路的电路结构,所述电路包含至少一个安装在一衬底上的电子部件,该电子部件特别是功率电子部件。
背景技术
通常将功率半导体芯片焊接在由金属或金属化陶瓷构成的载体上,以便将工作过程中产生的热量迅速导散到周围环境。工作过程中经常发生温度变化,时间一长,这种温度变化会导致焊料自边缘向内形成裂纹,或者在芯片下方最热区域的中央形成网状裂纹。这会反过来又影响散热从而使温度升高、缩短电路使用寿命。
发明内容
本发明的目的是提供一种电路结构,其在防止焊料层中形成热致裂纹方面的性能有所改进。
本发明用来达成上述目的的解决方案是一种具有权利要求1所述特征的电路结构。本发明用来达成上述目的的另一解决方案是一种具有权利要求10所述特征的方法。从属权利要求涉及的是所述电路结构的有利设计方案。
本发明的电路结构具有一电路。所述电路以一衬底为基础,该衬底例如是包含一金属涂层的陶瓷衬底,比如DCB。此处也可采用全金属衬底或其他的已知衬底。
所述衬底上附着有一或多个电子部件。所述部件优选为一或多个半导体部件,特别是例如为IGBT的功率半导体部件。所述部件的底面通过一焊料层与所述衬底相连。通过一或多个平面导电通路实现至少部分的顶面电接触。所述平面导电通路优选为层,例如以电镀方式形成在所述衬底及所述一或多个部件上的铜基层。
根据本发明,所述电路上还设有一弹性元件。所述弹性元件例如为层或元件,例如由硅或硅质胶构成。其中,当所述弹性元件例如是硅质胶时,该弹性元件可与所述电路固定连接,而当所述弹性元件是安装上去的硅质元件或绝缘膜时,该弹性元件不与所述电路固定连接。所述弹性元件优选电绝缘。
最后,设有一用于对所述弹性元件施加作用力的装置。该作用力将弹性元件压向所述电路。
本发明还涉及一种操作一电路的方法,所述电路包括至少一个安装在一衬底上的电子部件和位于所述部件上的弹性元件,其中,所述弹性元件的大小至少能够覆盖整个所述部件,根据本发明的方法,将所述弹性元件压向所述电路,使得所施加的压力作用于整个所述部件。
在上述施加于所述电路,特别是施加于所述一或多个部件的优选较轻微的压力的作用下,位于受此压力作用的部件下方的焊料层中不会出现前述裂纹或者裂纹能够重新闭合。这一点利用的是以下原理:即使在电路工作过程中,部件下方的焊料一般也不会变脆,而是保持一定的流动性或蠕动性。其优点在于,焊料在压力作用下发生运动,从而使形成的裂纹重新闭合。在此过程中,所述弹性元件优选使作用力均匀分布到所述部件上。
所述压力优选处于数巴(bar)范围内,即介于例如1巴与10巴之间。这一方面可以使所述压力达到足以防止形成裂纹的程度。另一方面可以防止部件下方的焊料被挤出来。
所述弹性元件的横向尺寸至少与所述部件或所述多个部件中的一个相同,这样就能使至少一个部件整体都受到平面压力的作用。此处的横向尺寸是指所述部件的长度和宽度,也就是在所述衬底所定义的平面内的延伸度。根据本发明的一种有利设计方案,所述弹性元件在横向上大体正好与整个电路同等大小。换言之,所述弹性元件至少基本覆盖整个电路,以便对所有部件施加压力。借此使压力均匀分布,从而防止任何一个部件形成裂纹。
所述电路优选具有至少一个绝缘层,例如结构化绝缘膜。这个绝缘层例如位于所述平面导电通路下方并阻止非希望的电接触。此处也可采用由多个绝缘层和多层平面导电通路构成的堆叠式结构。为了达到期望厚度,所述绝缘层本身也可以是由多个单层(例如多个绝缘膜)所构成的堆叠式结构。所述绝缘层优选经结构化处理,以便(例如)所述部件的顶部接触面与所述平面导电通路贯穿接触。
所述弹性元件优选比所述绝缘层的材料软。这样能防止施压的弹性元件给绝缘层造成机械过载。为了对所述弹性元件施加均匀的作用力,所述装置优选具有一基本无弹性的压力元件,该压力元件例如由金属、陶瓷或塑料构成且其自身即设置为可对所述弹性元件施加作用力。
使所述弹性元件具有良好的热导率特别有利。例如,该弹性元件的热导率优选至少为1W/mK。此时,所述部件中产生的热量除了向下传入衬底外,也向上传入弹性元件,这就增强了整体热输出也就是改进了散热性。这对热输出较大的电力电子部件特别有利。其中,所述弹性元件厚度优选相对较小,以便减小(例如)向所述压力元件传热时的热阻。此外,使此处的压力元件同样具有良好的热导率也是有利的,例如采用金属制压力元件。
将所述弹性元件设计为储热器也是非常有利的。这就需要使其(例如)具有足够大的质量,也就是足够大的厚度。举例而言,所述弹性元件的厚度应至少为3mm。在这个设计方案中,所述弹性元件可用作热暂存器,借此减小所述部件的短时散热峰值。如此可延长部件使用寿命。
附图说明
下面借助附图对本发明的优选实施例进行详细说明,这些优选实施例不对本发明构成任何限制。附图对各项特征予以图示且相同特征均用相同参考符号表示。此处的唯一一个附图示意的是包含一电力电子部件的电路。
具体实施方式
附图为包含一功率半导体部件4的示范性电路。功率半导体部件4借助焊料层3附着在DCB铜线路2上。DCB铜线路2本身是一DCB衬底的组成部分,在本实施例中,该衬底将DCB铜线路2包含在内且该DCB铜线路附着在陶瓷载体1上。
本实施例通过平面铜导电通路6实现与功率半导体部件4的顶面的电接触。为此,需要先在所述衬底和功率半导体部件4上设置绝缘层5。在本实施例中,绝缘层5由层压式绝缘膜构成。绝缘层5也可通过其他方式产生,例如借助已知的化学或物理沉积法。
为了与功率半导体部件4实现电接触,绝缘层5具有一或多个窗口。可以通过在所述电路上对绝缘层5进行结构化处理(例如激光烧蚀)来产生这些窗口。但也可以(例如)将经过预结构化处理的薄膜层压到电路上。
平面铜导电通路6附着在绝缘层5上。平面铜导电通路6同样可通过不同的方式(例如已知的沉积法)产生。但在电力电子领域优选采用电流沉积。借此可产生能耐受大电流的厚度。在本实施例中,由于需要单独接触多个电接点,因此平面铜导电通路6自身也已结构化。
平面铜导电通路6上设有硅质胶层7。硅质胶层7的长度及宽度大体与功率半导体部件4相当。硅质胶层7电绝缘,但在本实施例中的热导率为10W/mK,亦即,就绝缘体而言具有相对较好的导热性。在本实施例中,硅质胶层7的厚度约为0.5mm。硅质胶层7上方设有由金属构成的压力元件8。通过这个压力元件8对下方的硅质胶层7施加压力。根据所述电路的一种外壳设计方案,上述压力是施加在压力元件8上。硅质胶层7将这个压力分散到下方的各结构上,亦即,经平面铜导电通路6和绝缘层5将压力传递给功率半导体部件4,进而传递给焊料层3。
因此,最后受到压力作用的是焊料层3。这个压力“较轻微”。这个压力优选能使焊料层3中形成的裂纹重新闭合。但又没有达到将功率半导体部件4下方的焊料挤出来的程度。上述压力作用要达到的目标是:即使在所述电路制成后,焊料也仍具有一定流动性,尽管这种流动性可能比较微弱。在此情况下,如果在长期变温操作的作用下形成细小裂纹,焊料就会在轻微压力的作用下爬回到裂纹中并使其闭合。借此防止裂纹所造成的负面影响并大幅延长整个组件的使用寿命,而在其他情况下通常难以阻止形成裂纹。
在本实施例中,硅质胶层7的厚度相对较小,具有较高的热导率,这样就能将功率半导体部件4中的大量余热经过硅质胶层7散发出去。亦即,硅质胶层7和压力元件8优选同时起到功率半导体部件4的附加散热器的作用。
根据本发明的第二实施方案,硅质胶层7实施为热缓冲器。为此,需要使硅质胶层7的厚度明显大于第一实施例,例如为3mm或5mm。作为硅质胶层7的替代方案,也可以采用由硅或另一种耐热弹性材料构成的弹性元件(未图示),但该弹性元件无需与平面铜导电通路6的表面粘合。在此情况下,硅质胶层7或上述元件用作热暂存器。短时峰值功率在功率半导体部件4内产生的多余余热先储存在该元件或硅质胶层7中,后再逐步散发出去。因而在此实施方案中,上述弹性元件或硅质胶层7的作用是防止余热的产生达到峰值,借此同样能达到延长使用寿命的目的。
Claims (10)
1.一种电路结构,包括:
一电路,所述电路包括至少一个电子部件(4)以及至少一个平面导电通路(6),所述电子部件通过一焊料层附着在一衬底上,所述平面导电通路用于对所述部件进行电接触,其中,所述平面导电通路(6)至少部分分布于所述部件(4)远离所述衬底的一侧,及
一设置在所述电路上的弹性元件(7),
一装置(8),用于向所述弹性元件(7)施加一作用力以将所述弹性元件(7)压向所述电路。
2.根据权利要求1所述的电路结构,其中,所述弹性元件(7)至少部分由硅或硅质胶构成。
3.根据权利要求1或2所述的电路结构,其中,所述弹性元件(7)的横向尺寸至少与所述部件(4)相同。
4.根据上述权利要求中任一项权利要求所述的电路结构,其中,所述弹性元件(7)的横向尺寸至少与所述电路相同。
5.根据上述权利要求中任一项权利要求所述的电路结构,其中,所述装置(8)具有一由金属、陶瓷或塑料制成的压力元件(8),所述压力元件位于所述弹性元件(7)上方。
6.根据上述权利要求中任一项权利要求所述的电路结构,其中,所述电路具有一位于所述平面导电通路(6)下方的绝缘层(5)。
7.根据权利要求6所述的电路结构,其中,所述弹性元件(7)比所述绝缘层(5)软。
8.根据上述权利要求中任一项权利要求所述的电路结构,其中,所述弹性元件(7)的热导率至少为1W/mK。
9.根据上述权利要求中任一项权利要求所述的电路结构,其中,所述电子部件(4)是一功率半导体部件(4)。
10.一种操作一电路的方法,所述电路包括至少一个借助一焊料层安装在一衬底上的电子部件(4)和一布置在所述部件(4)上的弹性元件(7),其中,所述弹性元件(7)的大小至少能够覆盖整个所述部件(4),其中,将所述弹性元件(7)压向所述电路,从而使得所施加的压力作用于整个所述部件(4)。
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DE102009015757A DE102009015757A1 (de) | 2009-04-01 | 2009-04-01 | Druckunterstützung für eine elektronische Schaltung |
PCT/EP2010/054147 WO2010112478A2 (de) | 2009-04-01 | 2010-03-30 | Druckunterstützung für eine elektronische schaltung |
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CN (1) | CN102365734B (zh) |
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JP2016219707A (ja) * | 2015-05-25 | 2016-12-22 | 富士電機株式会社 | 半導体装置及びその製造方法 |
EP3489997B1 (en) * | 2017-11-28 | 2022-06-15 | Mitsubishi Electric R&D Centre Europe B.V. | System for allowing the restoration of an interconnection of a die of a power module |
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JP3220900B2 (ja) * | 1997-06-24 | 2001-10-22 | 三菱電機株式会社 | パワー半導体モジュール |
DE69825153D1 (de) * | 1997-10-14 | 2004-08-26 | Matsushita Electric Ind Co Ltd | Wärmeleitende einheit und wärmeverbindungsstruktur welche diese einheit verwendet |
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DE102004018476B4 (de) * | 2004-04-16 | 2009-06-18 | Infineon Technologies Ag | Leistungshalbleiteranordnung mit kontaktierender Folie und Anpressvorrichtung |
DE102004018477B4 (de) * | 2004-04-16 | 2008-08-21 | Infineon Technologies Ag | Halbleitermodul |
DE102004061936A1 (de) * | 2004-12-22 | 2006-07-06 | Siemens Ag | Anordnung eines Halbleitermoduls und einer elektrischen Verschienung |
JP2008153464A (ja) * | 2006-12-18 | 2008-07-03 | Sanken Electric Co Ltd | 半導体装置 |
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2009
- 2009-04-01 DE DE102009015757A patent/DE102009015757A1/de not_active Withdrawn
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2010
- 2010-03-30 JP JP2012502627A patent/JP2012523109A/ja active Pending
- 2010-03-30 RU RU2011144091/28A patent/RU2011144091A/ru not_active Application Discontinuation
- 2010-03-30 WO PCT/EP2010/054147 patent/WO2010112478A2/de active Application Filing
- 2010-03-30 CN CN201080015502.1A patent/CN102365734B/zh not_active Expired - Fee Related
- 2010-03-30 US US13/262,582 patent/US20120075826A1/en not_active Abandoned
- 2010-03-30 EP EP10713602A patent/EP2415076A2/de not_active Withdrawn
- 2010-03-30 KR KR1020117022978A patent/KR20120002982A/ko unknown
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US5237203A (en) * | 1991-05-03 | 1993-08-17 | Trw Inc. | Multilayer overlay interconnect for high-density packaging of circuit elements |
US20020173192A1 (en) * | 2001-05-05 | 2002-11-21 | Semikron Elektronik Gmbh | Power semiconductor module with pressure contact means |
WO2006069855A1 (de) * | 2004-12-28 | 2006-07-06 | Siemens Aktiengesellschaft | Anordnung eines elektrischen bauelements und einer zwei-phasen-kühlvorrichtung |
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DE102009015757A1 (de) | 2010-10-14 |
JP2012523109A (ja) | 2012-09-27 |
EP2415076A2 (de) | 2012-02-08 |
WO2010112478A2 (de) | 2010-10-07 |
RU2011144091A (ru) | 2013-05-10 |
CN102365734B (zh) | 2015-08-19 |
KR20120002982A (ko) | 2012-01-09 |
US20120075826A1 (en) | 2012-03-29 |
WO2010112478A3 (de) | 2011-08-11 |
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