CN102363528A - 冷离子太阳能级多晶硅料的提纯方法及其设备 - Google Patents
冷离子太阳能级多晶硅料的提纯方法及其设备 Download PDFInfo
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- CN102363528A CN102363528A CN2011101812879A CN201110181287A CN102363528A CN 102363528 A CN102363528 A CN 102363528A CN 2011101812879 A CN2011101812879 A CN 2011101812879A CN 201110181287 A CN201110181287 A CN 201110181287A CN 102363528 A CN102363528 A CN 102363528A
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- 238000000746 purification Methods 0.000 title claims abstract description 47
- 239000002210 silicon-based material Substances 0.000 title claims abstract description 39
- 238000000034 method Methods 0.000 title claims abstract description 28
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 18
- 239000012159 carrier gas Substances 0.000 claims abstract description 39
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000002245 particle Substances 0.000 claims abstract description 13
- 230000004888 barrier function Effects 0.000 claims abstract description 10
- 239000011863 silicon-based powder Substances 0.000 claims abstract description 8
- 230000000694 effects Effects 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims description 24
- 150000002500 ions Chemical class 0.000 claims description 21
- 230000005284 excitation Effects 0.000 claims description 19
- 239000007789 gas Substances 0.000 claims description 18
- 229920005591 polysilicon Polymers 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 239000011856 silicon-based particle Substances 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 235000013312 flour Nutrition 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 5
- 230000006698 induction Effects 0.000 claims description 3
- 238000004064 recycling Methods 0.000 claims description 3
- 230000001105 regulatory effect Effects 0.000 claims description 3
- 210000002381 plasma Anatomy 0.000 description 22
- 230000009286 beneficial effect Effects 0.000 description 2
- 210000004027 cell Anatomy 0.000 description 2
- 230000005495 cold plasma Effects 0.000 description 2
- 238000005554 pickling Methods 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
- 238000010257 thawing Methods 0.000 description 1
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Abstract
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CN 201110181287 CN102363528B (zh) | 2011-06-30 | 2011-06-30 | 冷离子太阳能级多晶硅料的提纯方法及其设备 |
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CN 201110181287 CN102363528B (zh) | 2011-06-30 | 2011-06-30 | 冷离子太阳能级多晶硅料的提纯方法及其设备 |
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CN102363528A true CN102363528A (zh) | 2012-02-29 |
CN102363528B CN102363528B (zh) | 2013-05-15 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107922196A (zh) * | 2015-08-20 | 2018-04-17 | 硅电子股份公司 | 热处理粒状硅的方法、粒状硅及制备硅单晶的方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10226510A (ja) * | 1997-02-07 | 1998-08-25 | Toho Aen Kk | 金属珪素粉体の予備処理方法 |
CN101007633A (zh) * | 2006-12-15 | 2007-08-01 | 佟新廷 | 光伏产业用硅制备方法 |
CN101503192A (zh) * | 2009-01-23 | 2009-08-12 | 晶海洋半导体材料(东海)有限公司 | 一种利用等离子体提纯铸造一体炉制备多晶硅的方法 |
CN101723377A (zh) * | 2008-10-28 | 2010-06-09 | 刘铁林 | 硅提纯方法及装置 |
CN102040221A (zh) * | 2009-10-13 | 2011-05-04 | 上海太阳能科技有限公司 | 一种金属硅的提纯方法 |
-
2011
- 2011-06-30 CN CN 201110181287 patent/CN102363528B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10226510A (ja) * | 1997-02-07 | 1998-08-25 | Toho Aen Kk | 金属珪素粉体の予備処理方法 |
CN101007633A (zh) * | 2006-12-15 | 2007-08-01 | 佟新廷 | 光伏产业用硅制备方法 |
CN101723377A (zh) * | 2008-10-28 | 2010-06-09 | 刘铁林 | 硅提纯方法及装置 |
CN101503192A (zh) * | 2009-01-23 | 2009-08-12 | 晶海洋半导体材料(东海)有限公司 | 一种利用等离子体提纯铸造一体炉制备多晶硅的方法 |
CN102040221A (zh) * | 2009-10-13 | 2011-05-04 | 上海太阳能科技有限公司 | 一种金属硅的提纯方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107922196A (zh) * | 2015-08-20 | 2018-04-17 | 硅电子股份公司 | 热处理粒状硅的方法、粒状硅及制备硅单晶的方法 |
KR20180041723A (ko) * | 2015-08-20 | 2018-04-24 | 실트로닉 아게 | 실리콘으로 구성되는 입자형 재료의 열처리를 위한 방법, 실리콘으로 구성되는 입자형 재료, 및 실리콘으로 구성되는 단결정을 제조하는 방법 |
JP2018523625A (ja) * | 2015-08-20 | 2018-08-23 | ジルトロニック アクチエンゲゼルシャフトSiltronic AG | 粒状シリコンの熱処理プロセス、粒状シリコン、およびシリコン単結晶の製造プロセス |
KR102069984B1 (ko) * | 2015-08-20 | 2020-01-23 | 실트로닉 아게 | 실리콘으로 구성되는 입자형 재료의 열처리를 위한 방법, 실리콘으로 구성되는 입자형 재료, 및 실리콘으로 구성되는 단결정을 제조하는 방법 |
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CN102363528B (zh) | 2013-05-15 |
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Address after: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee after: trina solar Ltd. Address before: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd. Address after: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee after: TRINASOLAR Co.,Ltd. Address before: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee before: trina solar Ltd. |
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