CN102356453A - 基板处理方法和基板处理装置 - Google Patents

基板处理方法和基板处理装置 Download PDF

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Publication number
CN102356453A
CN102356453A CN2010800128077A CN201080012807A CN102356453A CN 102356453 A CN102356453 A CN 102356453A CN 2010800128077 A CN2010800128077 A CN 2010800128077A CN 201080012807 A CN201080012807 A CN 201080012807A CN 102356453 A CN102356453 A CN 102356453A
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CN
China
Prior art keywords
substrate
temperature
gas
organic acid
supply
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Pending
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CN2010800128077A
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English (en)
Chinese (zh)
Inventor
三好秀典
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN102356453A publication Critical patent/CN102356453A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76883—Post-treatment or after-treatment of the conductive material

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
CN2010800128077A 2009-03-19 2010-02-04 基板处理方法和基板处理装置 Pending CN102356453A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009-067919 2009-03-19
JP2009067919A JP5161819B2 (ja) 2009-03-19 2009-03-19 基板処理方法および基板処理装置
PCT/JP2010/051597 WO2010106843A1 (ja) 2009-03-19 2010-02-04 基板処理方法および基板処理装置

Publications (1)

Publication Number Publication Date
CN102356453A true CN102356453A (zh) 2012-02-15

Family

ID=42739509

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010800128077A Pending CN102356453A (zh) 2009-03-19 2010-02-04 基板处理方法和基板处理装置

Country Status (5)

Country Link
US (1) US20120006782A1 (enrdf_load_stackoverflow)
JP (1) JP5161819B2 (enrdf_load_stackoverflow)
KR (1) KR101296960B1 (enrdf_load_stackoverflow)
CN (1) CN102356453A (enrdf_load_stackoverflow)
WO (1) WO2010106843A1 (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105374705A (zh) * 2014-08-27 2016-03-02 株式会社日立国际电气 衬底处理装置、半导体器件的制造方法及记录介质
CN105027232B (zh) * 2013-03-01 2018-01-12 户田工业株式会社 导电性涂膜的制造方法及导电性涂膜
CN111088501A (zh) * 2019-12-16 2020-05-01 浙江大学 一种元素分析仪还原管的回收和再利用方法
CN111607801A (zh) * 2019-02-22 2020-09-01 中科院微电子研究所昆山分所 一种铜表面氧化物的处理方法
CN112928010A (zh) * 2019-12-06 2021-06-08 东京毅力科创株式会社 基板处理方法和基板处理装置
CN113078060A (zh) * 2020-01-06 2021-07-06 株式会社国际电气 半导体装置的制造方法、基板处理装置和存储介质

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5395708B2 (ja) * 2010-03-09 2014-01-22 東京エレクトロン株式会社 基板の配線方法及び半導体製造装置
US10388820B2 (en) * 2015-02-03 2019-08-20 Lg Electronics Inc. Metal organic chemical vapor deposition apparatus for solar cell

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57170534A (en) * 1981-04-15 1982-10-20 Hitachi Ltd Dry etching method for aluminum and aluminum alloy
JPS63203772A (ja) * 1987-02-20 1988-08-23 Hitachi Ltd 銅薄膜の気相成長方法
US6899816B2 (en) * 2002-04-03 2005-05-31 Applied Materials, Inc. Electroless deposition method
US7205228B2 (en) * 2003-06-03 2007-04-17 Applied Materials, Inc. Selective metal encapsulation schemes
US20070289604A1 (en) * 2004-04-30 2007-12-20 Yukio Fukunaga Substrate Processing Apparatus
WO2006073140A1 (en) * 2005-01-06 2006-07-13 Ebara Corporation Substrate processing method and apparatus
JP2006216937A (ja) * 2005-01-06 2006-08-17 Ebara Corp 基板処理方法及び装置
US20070054047A1 (en) * 2005-09-06 2007-03-08 Tokyo Electron Limited Method of forming a tantalum-containing layer from a metalorganic precursor
JP4740329B2 (ja) * 2006-06-26 2011-08-03 東京エレクトロン株式会社 基板処理方法および基板処理装置
JP2009043974A (ja) * 2007-08-09 2009-02-26 Tokyo Electron Ltd 半導体装置の製造方法、半導体基板の処理装置及び記憶媒体
JP5006134B2 (ja) * 2007-08-09 2012-08-22 東京エレクトロン株式会社 ドライクリーニング方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105027232B (zh) * 2013-03-01 2018-01-12 户田工业株式会社 导电性涂膜的制造方法及导电性涂膜
CN105374705A (zh) * 2014-08-27 2016-03-02 株式会社日立国际电气 衬底处理装置、半导体器件的制造方法及记录介质
CN105374705B (zh) * 2014-08-27 2018-08-28 株式会社日立国际电气 衬底处理装置、半导体器件的制造方法及记录介质
CN111607801A (zh) * 2019-02-22 2020-09-01 中科院微电子研究所昆山分所 一种铜表面氧化物的处理方法
CN112928010A (zh) * 2019-12-06 2021-06-08 东京毅力科创株式会社 基板处理方法和基板处理装置
CN111088501A (zh) * 2019-12-16 2020-05-01 浙江大学 一种元素分析仪还原管的回收和再利用方法
CN113078060A (zh) * 2020-01-06 2021-07-06 株式会社国际电气 半导体装置的制造方法、基板处理装置和存储介质
CN113078060B (zh) * 2020-01-06 2024-03-26 株式会社国际电气 半导体装置的制造方法、基板处理装置和存储介质

Also Published As

Publication number Publication date
JP5161819B2 (ja) 2013-03-13
KR101296960B1 (ko) 2013-08-14
KR20110127268A (ko) 2011-11-24
JP2010225614A (ja) 2010-10-07
WO2010106843A1 (ja) 2010-09-23
US20120006782A1 (en) 2012-01-12

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Application publication date: 20120215