CN102344146A - 一种用于合成四氟化硅的工艺和设备 - Google Patents
一种用于合成四氟化硅的工艺和设备 Download PDFInfo
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- CN102344146A CN102344146A CN2011102096109A CN201110209610A CN102344146A CN 102344146 A CN102344146 A CN 102344146A CN 2011102096109 A CN2011102096109 A CN 2011102096109A CN 201110209610 A CN201110209610 A CN 201110209610A CN 102344146 A CN102344146 A CN 102344146A
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- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 title claims abstract description 15
- 238000000034 method Methods 0.000 title abstract description 15
- 230000008569 process Effects 0.000 title abstract description 9
- 230000003407 synthetizing effect Effects 0.000 title 1
- 238000003756 stirring Methods 0.000 claims abstract description 31
- 239000011554 ferrofluid Substances 0.000 claims abstract description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 13
- 238000005516 engineering process Methods 0.000 claims description 18
- 238000007789 sealing Methods 0.000 claims description 17
- 238000010438 heat treatment Methods 0.000 claims description 9
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 8
- 239000012530 fluid Substances 0.000 claims description 8
- 229910052708 sodium Inorganic materials 0.000 claims description 8
- 239000011734 sodium Substances 0.000 claims description 8
- 239000007787 solid Substances 0.000 claims description 8
- 230000005294 ferromagnetic effect Effects 0.000 claims description 5
- 230000005540 biological transmission Effects 0.000 claims description 3
- 238000002955 isolation Methods 0.000 claims description 2
- 239000007789 gas Substances 0.000 abstract description 34
- 238000001354 calcination Methods 0.000 abstract description 24
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract description 7
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 238000001035 drying Methods 0.000 abstract description 3
- 239000011343 solid material Substances 0.000 abstract description 3
- 238000010521 absorption reaction Methods 0.000 abstract description 2
- 229910000040 hydrogen fluoride Inorganic materials 0.000 abstract description 2
- 238000005979 thermal decomposition reaction Methods 0.000 abstract description 2
- -1 sodium fluorosilicate Chemical compound 0.000 abstract 1
- 231100000331 toxic Toxicity 0.000 abstract 1
- 230000002588 toxic effect Effects 0.000 abstract 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 14
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 229910052786 argon Inorganic materials 0.000 description 7
- 238000001816 cooling Methods 0.000 description 7
- 239000012159 carrier gas Substances 0.000 description 5
- 230000018044 dehydration Effects 0.000 description 5
- 238000006297 dehydration reaction Methods 0.000 description 5
- 238000000354 decomposition reaction Methods 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 239000012809 cooling fluid Substances 0.000 description 3
- 238000011010 flushing procedure Methods 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910004014 SiF4 Inorganic materials 0.000 description 2
- 230000008676 import Effects 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 description 2
- 238000001149 thermolysis Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910001026 inconel Inorganic materials 0.000 description 1
- 229910001338 liquidmetal Inorganic materials 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 230000007096 poisonous effect Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 230000000391 smoking effect Effects 0.000 description 1
- 235000013024 sodium fluoride Nutrition 0.000 description 1
- 239000011775 sodium fluoride Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/10—Compounds containing silicon, fluorine, and other elements
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/18—Stationary reactors having moving elements inside
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J6/00—Heat treatments such as Calcining; Fusing ; Pyrolysis
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
- C01B33/10705—Tetrafluoride
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B14/00—Crucible or pot furnaces
- F27B14/08—Details peculiar to crucible or pot furnaces
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Silicon Compounds (AREA)
Abstract
Description
Claims (4)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US36732010P | 2010-07-23 | 2010-07-23 | |
US61/367,320 | 2010-07-23 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN102344146A true CN102344146A (zh) | 2012-02-08 |
Family
ID=45497383
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2011102096109A Pending CN102344146A (zh) | 2010-07-23 | 2011-07-25 | 一种用于合成四氟化硅的工艺和设备 |
CN2011202646566U Expired - Fee Related CN202290008U (zh) | 2010-07-23 | 2011-07-25 | 煅烧设备 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2011202646566U Expired - Fee Related CN202290008U (zh) | 2010-07-23 | 2011-07-25 | 煅烧设备 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20130115157A1 (zh) |
KR (1) | KR20130135235A (zh) |
CN (2) | CN102344146A (zh) |
TW (1) | TWI441778B (zh) |
WO (1) | WO2012012228A2 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102897769A (zh) * | 2012-08-24 | 2013-01-30 | 山东瑞福锂业有限公司 | 一种四氟化硅的生产工艺 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013000001A1 (de) * | 2011-06-30 | 2013-01-03 | Ebner Industrieofenbau Gesellschaft M.B.H. | VERFAHREN ZUM ERWÄRMEN EINES FORMBAUTEILS FÜR EIN ANSCHLIEßENDES PRESSHÄRTEN SOWIE DURCHLAUFOFEN ZUM BEREICHSWEISEN ERWÄRMEN EINES AUF EINE VORGEGEBENE TEMPERATUR VORGEWÄRMTEN FORMBAUTEILS AUF EINE HÖHERE TEMPERATUR |
TWI490164B (zh) * | 2011-08-02 | 2015-07-01 | Circulon Hungary Ltd | 鍛燒室與方法 |
US20160201988A1 (en) * | 2013-08-08 | 2016-07-14 | Advanced Green Technologies, Llc | Ceramic calciner apparatus and associated systems and methods |
US9960068B1 (en) * | 2016-12-02 | 2018-05-01 | Lam Research Corporation | Moment cancelling pad raising mechanism in wafer positioning pedestal for semiconductor processing |
US9892956B1 (en) * | 2016-10-12 | 2018-02-13 | Lam Research Corporation | Wafer positioning pedestal for semiconductor processing |
CN110398152A (zh) * | 2019-08-20 | 2019-11-01 | 四川众友联合实业有限公司 | 高效节能熔化炉 |
CN110937415B (zh) * | 2019-10-25 | 2021-01-01 | 陈之中 | 一种粉末状或微小颗粒状固体的定量加料器 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN2115428U (zh) * | 1992-03-17 | 1992-09-09 | 曹红蓓 | 带气、汽、液隔离机构的零泄漏密封器 |
WO2009126218A1 (en) * | 2008-04-07 | 2009-10-15 | Lord Stephen M | A process for removing aluminum and other metal chlorides from chlorosilanes |
CN101698482A (zh) * | 2009-10-13 | 2010-04-28 | 西安三瑞实业有限公司 | 回转反应炉热裂解氟硅酸钠制备四氟化硅的方法 |
US20100150789A1 (en) * | 2008-12-17 | 2010-06-17 | Memc Electronic Materials, Inc. | Systems for producing silicon tetrafluoride from fluorosilicates in a fluidized bed reactor |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3551098A (en) * | 1968-01-12 | 1970-12-29 | Flemmert Goesta Lennart | Process for decomposing sodium fluosilicate and/or sodium bifluoride into sodium fluoride,hydrogen fluoride and silicon tetrafluoride |
US4113836A (en) * | 1976-10-29 | 1978-09-12 | National Gypsum Company | Continuous gypsum calcination process and kettle therefor |
-
2011
- 2011-07-12 US US13/810,193 patent/US20130115157A1/en not_active Abandoned
- 2011-07-12 WO PCT/US2011/043723 patent/WO2012012228A2/en active Application Filing
- 2011-07-12 KR KR1020137004460A patent/KR20130135235A/ko not_active Application Discontinuation
- 2011-07-22 TW TW100125995A patent/TWI441778B/zh not_active IP Right Cessation
- 2011-07-25 CN CN2011102096109A patent/CN102344146A/zh active Pending
- 2011-07-25 CN CN2011202646566U patent/CN202290008U/zh not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN2115428U (zh) * | 1992-03-17 | 1992-09-09 | 曹红蓓 | 带气、汽、液隔离机构的零泄漏密封器 |
WO2009126218A1 (en) * | 2008-04-07 | 2009-10-15 | Lord Stephen M | A process for removing aluminum and other metal chlorides from chlorosilanes |
US20100150789A1 (en) * | 2008-12-17 | 2010-06-17 | Memc Electronic Materials, Inc. | Systems for producing silicon tetrafluoride from fluorosilicates in a fluidized bed reactor |
CN101698482A (zh) * | 2009-10-13 | 2010-04-28 | 西安三瑞实业有限公司 | 回转反应炉热裂解氟硅酸钠制备四氟化硅的方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102897769A (zh) * | 2012-08-24 | 2013-01-30 | 山东瑞福锂业有限公司 | 一种四氟化硅的生产工艺 |
CN102897769B (zh) * | 2012-08-24 | 2014-10-29 | 山东瑞福锂业有限公司 | 一种四氟化硅的生产工艺 |
Also Published As
Publication number | Publication date |
---|---|
WO2012012228A2 (en) | 2012-01-26 |
TWI441778B (zh) | 2014-06-21 |
CN202290008U (zh) | 2012-07-04 |
KR20130135235A (ko) | 2013-12-10 |
TW201210941A (en) | 2012-03-16 |
WO2012012228A3 (en) | 2012-04-19 |
US20130115157A1 (en) | 2013-05-09 |
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