CN102304752A - Crucible structure for growth of sapphire crystals - Google Patents
Crucible structure for growth of sapphire crystals Download PDFInfo
- Publication number
- CN102304752A CN102304752A CN201110273270A CN201110273270A CN102304752A CN 102304752 A CN102304752 A CN 102304752A CN 201110273270 A CN201110273270 A CN 201110273270A CN 201110273270 A CN201110273270 A CN 201110273270A CN 102304752 A CN102304752 A CN 102304752A
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- crucible
- stiffening web
- main body
- crystal growth
- stiffener
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Abstract
The invention discloses a crucible structure for the growth of sapphire crystals. In the crucible structure, a stiffener B is arranged on the external circumference of the top edge of a crucible main body, more than one stiffener A is arranged on the external circumference of the middle of the crucible main body, and the sections of the stiffener A and the stiffener B are trapezoidal, square or arc. By arranging the stiffeners on the outer surface of the top edge and middle of the crucible, the strength of the crucible can be improved on the premise of not obviously increasing the crucible material, thus the service life of the crucible can be prolonged; and the crucible is simple in structure, low in cost, obvious in use effect and easy to prepare and can be widely applied to sapphire crystal growing systems, laser crystal growing systems and other high-temperature crystal growing systems.
Description
Technical field
The invention belongs to the crystal growth equipment technical field, relate to a kind of sapphire crystal growth crucible structure.
Background technology
In the sapphire crystal growth system, crucible is vital parts, and the sapphire starting material after the heat fused, carry out sapphire crystal growth under the guiding of seed crystal in crucible; Because slowly carry out sapphire crystal growth (more than 2000 ℃), long-time (more than 10 days) under hot environment, therefore, require crucible can be high temperature resistant, long lifetime, low cost.Crucible of the prior art is the conventional columnar structured of sidewall of crucible uniform thickness, in the sapphire crystal growth process; Because the STRESS VARIATION of crystal structure stress and crucible self; Often cause the cracking of crucible, thereby cause crucible to shift to an earlier date loss, cause heavy losses.
Summary of the invention
The purpose of this invention is to provide a kind of sapphire crystal growth crucible structure, solved in the prior art because the STRESS VARIATION of crystal structure stress and crucible self often causes the cracking of crucible, thereby causes crucible to shift to an earlier date the problem of loss.
The technical scheme that the present invention adopted is that a kind of sapphire crystal growth crucible structure is provided with stiffening web B one at the excircle place of crucible main body upper edge, the stiffening web A more than being provided with together on the excircle of the middle part of crucible main body.
Sapphire crystal growth of the present invention crucible structure, its characteristic are that also the cross-sectional shape of described stiffening web A and stiffening web B is trapezoidal, square or circular arc.
The invention has the beneficial effects as follows with background technology and compare,, under the prerequisite of not obvious increase crucible material, strengthen the intensity of crucible through stiffening web being set at crucible middle part and place suitable for reading; Thereby improve the work-ing life of crucible; Simple in structure, easy to manufacture, the crucible structure of good rigidly.
Description of drawings
Fig. 1 is a crucible structural representation of the prior art;
Fig. 2 is the structural representation of apparatus of the present invention.
Among the figure, 1. crucible main body, 2. stiffening web A, 3. stiffening web B.
Embodiment
Below in conjunction with accompanying drawing and embodiment the present invention is elaborated.
As shown in Figure 1, crucible structure of the prior art is exactly a common pot type body structure.
As shown in Figure 2, the crucible structure of the embodiment of the invention is at the closed together stiffening web B3 of the excircle place of crucible main body 1 upper edge setting, the closed stiffening web A2 in another road to be set on the excircle of the middle part of crucible main body 1.The cross-sectional shape of stiffening web A2, stiffening web B3 is trapezoidal, square or circular arc etc.
Crucible structure of the present invention can also be provided with the more stiffening web of multiple tracks according to the size of crucible on the upper, middle and lower of crucible main body 1 excircle.
Crucible structure of the present invention through in crucible upper edge outer surface and middle part stiffening web being set, strengthens the intensity of crucible under the prerequisite of not obvious increase crucible material, thus the work-ing life of improving crucible; Simple in structure, easy to manufacture, cost is low, result of use obviously can be widely used in the sapphire crystal growth system, in laser crystal growth system and other high temperature crystal growth system.
Claims (3)
1. sapphire crystal growth crucible structure, it is characterized in that: the excircle place in crucible main body (1) upper edge is provided with one stiffening web B (3), the stiffening web A (2) more than being provided with together on the middle part excircle of crucible main body (1).
2. sapphire crystal growth crucible structure according to claim 1; It is characterized in that; The excircle place of described crucible main body 1 upper edge is provided with closed stiffening web B (3) one, and the middle part excircle of crucible main body 1 is provided with the closed stiffening web A (2) in another road.
3. sapphire crystal growth crucible structure according to claim 1 is characterized in that, the cross-sectional shape of described stiffening web A (2) and stiffening web B (3) is trapezoidal, square or circular arc.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110273270A CN102304752A (en) | 2011-09-15 | 2011-09-15 | Crucible structure for growth of sapphire crystals |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110273270A CN102304752A (en) | 2011-09-15 | 2011-09-15 | Crucible structure for growth of sapphire crystals |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102304752A true CN102304752A (en) | 2012-01-04 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110273270A Pending CN102304752A (en) | 2011-09-15 | 2011-09-15 | Crucible structure for growth of sapphire crystals |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102304752A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200940931A (en) * | 2007-11-30 | 2009-10-01 | Gen Electric | Refractory crucibles capable of managing thermal stress and suitable for melting highly reactive alloys |
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2011
- 2011-09-15 CN CN201110273270A patent/CN102304752A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200940931A (en) * | 2007-11-30 | 2009-10-01 | Gen Electric | Refractory crucibles capable of managing thermal stress and suitable for melting highly reactive alloys |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20120104 |