CN203200381U - Novel crystal growth furnace heater - Google Patents
Novel crystal growth furnace heater Download PDFInfo
- Publication number
- CN203200381U CN203200381U CN 201320162052 CN201320162052U CN203200381U CN 203200381 U CN203200381 U CN 203200381U CN 201320162052 CN201320162052 CN 201320162052 CN 201320162052 U CN201320162052 U CN 201320162052U CN 203200381 U CN203200381 U CN 203200381U
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- end surface
- crystal growth
- growth furnace
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Abstract
The utility model discloses a novel crystal growth furnace heater, comprising twelve electrodes and a plurality of strip-shaped tungsten rods, wherein six electrodes are encircled into a ring shape to form an upper end surface, and the other six electrodes are encircled into a ring shape to form a lower end surface which has the same shape with the upper end surface; and the strip-shaped tungsten rods are longitudinally arranged between the upper end surface and the lower end surface, and each strip-shaped tungsten rod is connected with the electrodes of the upper and lower end surfaces by using fastening bolts. The novel crystal growth furnace heater uses a three-phase power supply, and the electrodes are connected with the three-phase power supply through power supply connecting parts. The novel crystal growth furnace heater can maintain a stable symmetrical heat field of which the temperature is raised from bottom to top and from center to edge gradually to ensure that the quality of long crystals is ensured, any one of the strip-shaped tungsten rods can be individually replaced when deformed, and the whole heater does not need to be replaced, so that the replacement cost is lower, and the operation can be carried out more simply.
Description
Technical field
The utility model relates to a kind of crystal production instrument, especially a kind of New type crystal growing furnace well heater.
Background technology
The hardness of crystals of synthetic sapphire crystal is very high, for 9 grades of Mohs' hardness, is only second to diamond, has good light transmission, heat conductivity and electric insulating quality, mechanics good mechanical property.The synthetic sapphire crystal has been widely used in many fields of science and technology, national defence and civilian industry, electronic technology as a kind of important technology crystal.
Long brilliant crucible is the main tool of producing at present sapphire crystal, the well heater of existing sapphire crystal growing furnace generally adopts resistive heating and induction heating, wherein belong to resistive heating and mainly contain the birdcage shape well heater of kyropoulos, mesh heater and the tubular well heater of heat-exchanging method, induction heating mode mainly contains the Frequency Induction Heating of falling crucible method etc.Wherein birdcage shape and tubular well heater have a common shortcoming, and namely whole well heater is as a whole, and the long-time rear replacement cost of distortion that uses is higher.And mesh heater and easily distortion, long brilliant one takes turns the rear distortion that substantially all can occur in various degree, causes Heating temperature uneven, when causing material the seed crystal welding asymmetric, cause complicated lattice defect, and when annealing, can cause crystal cleavage.Last medium frequency induction heater is not suitable for the major diameter sapphire crystal growth.Comprehensive nearly all well heater has a common shortcoming: safeguard that replacement cost is higher.
Summary of the invention
Goal of the invention: for the deficiencies in the prior art, the applicant has designed a kind of New type crystal growing furnace well heater through long-term practical exploration.
Technical scheme: in order to realize the foregoing invention purpose, the technical scheme that the utility model adopts is: a kind of New type crystal growing furnace well heater, comprise 12 electrodes and some strip tungsten bars, wherein 6 electrodes surround ring-type and form the upper surface, other 6 electrodes surround ring-type and form the lower surface identical with the upper surface shape, and strip tungsten bar vertically is set between described upper surface and lower surface.
Use holding bolt to be connected between the electrode of each strip tungsten bar and upper and lower end face.Described strip tungsten bar is evenly distributed, and so just can make the heating of this device more even.
Every 2 adjacent electrodes that surround described upper surface are one group, have so just formed three groups of electrodes.This device uses three-phase supply, and described electrode is connected with three-phase supply by the power supply connection section.
Beneficial effect: the utility model compared with prior art, its beneficial effect is:
1, the utility model adopts a plurality of strip tungsten bars to form, and is evenly distributed, so that the more equal even symmetry of heating, and the thermal field of a stable symmetry that can keep from down to up, be raise gradually to lip temperature by the center, thereby guarantees the quality of long crystalline substance;
2, the maintenance update cost of this device is low, because well heater is to be separately fixed on the electrode up and down by a plurality of independent strip tungsten bars, arbitrary strip tungsten bar deforms, can change separately, do not need to change whole well heater, so replacement cost is lower, operates also simpler;
3, the strip tungsten bar of this device is more easily cleared up, and has solved the shortcoming that mesh heater can not clean netted tungsten filament.
Description of drawings
Fig. 1 is the structural representation of a kind of New type crystal growing furnace well heater of the utility model.
Fig. 2 is the connection diagram of upper surface electrode and power supply connection section in the utility model.
Fig. 3 is the connection diagram of electrode and strip tungsten bar in the utility model.
Embodiment
Below by a most preferred embodiment, the technical program is elaborated, but protection domain of the present utility model is not limited to described embodiment.
As shown in Figure 1, a kind of New type crystal growing furnace well heater comprises 12 electrodes 1 and strip tungsten bar 2, and wherein 6 electrodes 1 surround ring-type and form the upper surface, 6 electrodes 1 surround ring-type and form the lower surface identical with the upper surface shape, and strip tungsten bar 2 is set between described upper surface and lower surface.
As shown in Figure 2, the utility model uses the three-phase supply power supply, and described electrode 1 is connected with three-phase supply by power supply connection section 3.Every 2 adjacent electrodes 1 that surround the upper surface are one group, have so just formed three groups of electrodes.
As shown in Figure 3, use holding bolt 4 to be connected between the electrode 1 of described strip tungsten bar 2 and upper and lower end face, arbitrary strip tungsten bar 2 is all fixed separately, and all strip tungsten bars 2 are evenly distributed, and arbitrary strip tungsten bar 2 can be changed separately when deforming.
The above only is preferred implementation of the present utility model; be noted that for those skilled in the art; under the prerequisite that does not break away from the utility model principle; can also make some improvements and modifications, these improvements and modifications also should be considered as protection domain of the present utility model.
Claims (3)
1. New type crystal growing furnace well heater, it is characterized in that: comprise 12 electrodes (1) and strip tungsten bar (2), 6 electrodes (1) surround ring-type and form the upper surface, 6 electrodes (1) surround ring-type and form the lower surface identical with the upper surface shape, and strip tungsten bar (2) is set between described upper surface and the lower surface.
2. a kind of New type crystal growing furnace well heater according to claim 1 is characterized in that: use holding bolt (4) to be connected between the electrode (1) of described strip tungsten bar (2) and upper and lower end face.
3. a kind of New type crystal growing furnace well heater according to claim 1 is characterized in that: described electrode (1) is connected with three-phase supply by power supply connection section (3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320162052 CN203200381U (en) | 2013-04-02 | 2013-04-02 | Novel crystal growth furnace heater |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320162052 CN203200381U (en) | 2013-04-02 | 2013-04-02 | Novel crystal growth furnace heater |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203200381U true CN203200381U (en) | 2013-09-18 |
Family
ID=49144509
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201320162052 Expired - Fee Related CN203200381U (en) | 2013-04-02 | 2013-04-02 | Novel crystal growth furnace heater |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203200381U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104195641A (en) * | 2014-09-04 | 2014-12-10 | 南京晶升能源设备有限公司 | Riveted tungsten plate heater for sapphire single crystal furnace |
| CN105113019A (en) * | 2015-09-29 | 2015-12-02 | 何康玉 | Heating electrode with heating tungsten bars |
| CN105401220A (en) * | 2014-09-12 | 2016-03-16 | 浙江上城科技有限公司 | Method and equipment for eliminating stress of sapphire thin sheet |
| CN112279260A (en) * | 2020-10-30 | 2021-01-29 | 广东先导稀材股份有限公司 | Preparation facilities of high-purity boron crystal and high-purity boron powder |
-
2013
- 2013-04-02 CN CN 201320162052 patent/CN203200381U/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104195641A (en) * | 2014-09-04 | 2014-12-10 | 南京晶升能源设备有限公司 | Riveted tungsten plate heater for sapphire single crystal furnace |
| CN105401220A (en) * | 2014-09-12 | 2016-03-16 | 浙江上城科技有限公司 | Method and equipment for eliminating stress of sapphire thin sheet |
| CN105113019A (en) * | 2015-09-29 | 2015-12-02 | 何康玉 | Heating electrode with heating tungsten bars |
| CN112279260A (en) * | 2020-10-30 | 2021-01-29 | 广东先导稀材股份有限公司 | Preparation facilities of high-purity boron crystal and high-purity boron powder |
| CN112279260B (en) * | 2020-10-30 | 2024-08-16 | 江苏先导微电子科技有限公司 | Preparation facilities of high-purity boron crystal and high-purity boron powder |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130918 Termination date: 20160402 |
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| CF01 | Termination of patent right due to non-payment of annual fee |