CN112279260A - Preparation facilities of high-purity boron crystal and high-purity boron powder - Google Patents

Preparation facilities of high-purity boron crystal and high-purity boron powder Download PDF

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Publication number
CN112279260A
CN112279260A CN202011200531.7A CN202011200531A CN112279260A CN 112279260 A CN112279260 A CN 112279260A CN 202011200531 A CN202011200531 A CN 202011200531A CN 112279260 A CN112279260 A CN 112279260A
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China
Prior art keywords
hole
conductive rod
purity boron
electrode
resistance wire
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CN202011200531.7A
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Chinese (zh)
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李房斌
何永健
谭继军
廖福
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Jiangsu Pioneer Microelectronics Technology Co ltd
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Vital Materials Co Ltd
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Priority to CN202011200531.7A priority Critical patent/CN112279260A/en
Publication of CN112279260A publication Critical patent/CN112279260A/en
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    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B35/00Boron; Compounds thereof
    • C01B35/02Boron; Borides
    • C01B35/023Boron
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The invention relates to the technical field of materials, and discloses a preparation device of high-purity boron crystals and high-purity boron powder, which comprises a base body with a cavity, a first conductive rod arranged in the cavity, a second conductive rod arranged in the cavity, a first electrode electrically connected with the first conductive rod, a second electrode electrically connected with the second conductive rod, and a linear resistance wire with a first end and a second end, wherein the first conductive rod is arranged in the cavity; a first jack is arranged on the side surface of the first conductive rod, and a second jack is arranged on the side surface of the second conductive rod; the first end is inserted into the first jack, and the second end is inserted into the second jack; a first clamping ring is sleeved on the first conductive rod, and a first gap for clamping the resistance wire is formed between the first clamping ring and the side surface of the first conductive rod; the second conductive rod is sleeved with a second clamping ring, and a second gap for clamping the resistance wire is formed between the second clamping ring and the side face of the second conductive rod. The resistance wire is stable in installation, not easy to loosen, convenient to disassemble and assemble and high in assembly efficiency.

Description

Preparation facilities of high-purity boron crystal and high-purity boron powder
Technical Field
The invention relates to the technical field of materials, in particular to a preparation device of high-purity boron crystal and high-purity boron powder.
Background
In the prior art, high-purity boron crystals and high-purity boron powder can be prepared by adopting a heating device for crystal growth as disclosed in CN204803443U, the high-purity boron crystals are formed by depositing on an attached resistance wire in a material high-temperature state in the preparation process, and the high-purity boron powder is formed when the material lacks an attachment point in the high-temperature state.
However, in the prior art, the resistance wire is fixed in the preparation device in a complex structure and inconvenient to assemble and disassemble.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: the structure of installing the fixed resistance wire in the prior art is complex and inconvenient to assemble and disassemble.
In order to solve the technical problems, the invention provides a preparation device of high-purity boron crystal and high-purity boron powder, which comprises a base body with a cavity, a first conductive rod arranged in the cavity, a second conductive rod arranged in the cavity, a first electrode electrically connected with the first conductive rod, a second electrode electrically connected with the second conductive rod, and a linear resistance wire with a first end and a second end; a first jack is arranged on the side surface of the first conductive rod, and a second jack is arranged on the side surface of the second conductive rod; the first end is inserted into the first jack, and the second end is inserted into the second jack; a first clamping ring is sleeved on the first conductive rod, and a first gap for clamping the resistance wire is formed between the first clamping ring and the side surface of the first conductive rod; and a second clamping ring is sleeved on the second conductive rod, and a second gap for clamping the resistance wire is formed between the second clamping ring and the side surface of the second conductive rod.
Furthermore, the resistance wires, the first jacks and the second jacks are all provided in plurality, the first jacks are distributed annularly around the axis of the first conductive rod, and the second jacks are distributed annularly around the axis of the second conductive rod; the resistance wires, the first jacks and the second jacks are in one-to-one correspondence, the first ends of the resistance wires are respectively inserted into the corresponding first jacks, and the second ends of the resistance wires are respectively inserted into the corresponding second jacks.
Furthermore, the seat body comprises a tube body with openings at two ends, a first sealing cover detachably connected to one end of the tube body, and a second sealing cover detachably connected to the other end of the tube body; the first sealing cover seals one end of the pipe body, and the second sealing cover seals the other end of the pipe body; the cavity is enclosed by the first sealed lid, the second sealed lid and body.
Furthermore, a first through hole is formed in the first sealing cover, and the first electrode penetrates through the first through hole and extends out of the cavity; and a second through hole is formed in the second sealing cover, and the second electrode penetrates through the second through hole and extends out of the cavity.
Furthermore, a first channel and a second channel communicated to the cavity are respectively arranged on the seat body.
Furthermore, a first matching hole is formed in the end face, facing the first conductive rod, of the first electrode, and the first conductive rod is inserted into the first matching hole.
Furthermore, a second matching hole is formed in the end face, facing the second conductive rod, of the second electrode, and the second conductive rod is inserted into the second matching hole.
Furthermore, the first clamping ring is provided with a first end face and a second end face, the first end face is provided with a first through hole, and the second end face is provided with a second through hole communicated with the first through hole; the first conductive rod sequentially penetrates through the first through hole and the second through hole; the second through hole faces the resistance wire, and the inner diameter of the second through hole is gradually increased in the direction from the first end face to the second end face; the second clamping ring is provided with a third end surface and a fourth end surface, the third end surface is provided with a third through hole, and the fourth end surface is provided with a fourth through hole communicated with the third through hole; the second conductive rod sequentially penetrates through the third through hole and the fourth through hole; the third through hole faces the resistance wire, and the inner diameter of the third through hole is gradually increased in the direction that the fourth end face faces the third end face.
Further, the minimum inner diameter of the second through hole is equal to the inner diameter of the first through hole, and the minimum inner diameter of the third through hole is equal to the inner diameter of the fourth through hole.
Further, the first conducting rod and the second conducting rod are both tungsten rods; the first electrode and the second electrode are both water-cooled electrodes.
Compared with the prior art, the preparation device of the high-purity boron crystal and the high-purity boron powder has the beneficial effects that:
the preparation facilities of this embodiment is used for preparing boron crystal and boron powder, set up the resistance wire between first conducting rod and second conducting rod after, be about to first end insert to first jack in, the second end inserts to the second jack in back simultaneously, promote first clamp ring and slide on first conducting rod, make its contact and extrusion resistance wire be close to first end department, promote the second clamp ring and slide on the second conducting rod, make its contact and extrusion resistance wire be close to second end department, the both ends of resistance wire are extrudeed fixed this moment, the installation is firm, should not loosen and take off, when needing to pull down, utilize first clamp ring of external force slip and second clamp ring can. The first electrode is powered by the power supply, and the current flows into the first conductive rod from the first electrode, passes through the resistance wire and flows out of the second electrode. The resistance wire heats, the temperature of the cavity rises, the materials in the cavity react and deposit on the resistance wire to form crystals, and powder is formed at other places lacking attachment points in the cavity. When the device is used, the number of the resistance wires can be adjusted according to actual use requirements, and then the crystal amount formed on the deposited resistance wires is adjusted.
The preparation facilities of this embodiment's resistance wire installation is firm, and difficult pine takes off, and the dismouting is convenient, and packaging efficiency is high, and can be according to the actual production condition, through the quantity that changes the setting resistance wire between first conducting rod and second conducting rod, the preparation volume of adaptability adjustment crystal, and then realize the high-efficient utilization of material.
Drawings
Fig. 1 is a sectional view of a production apparatus for high-purity boron crystal and high-purity boron powder disclosed in an embodiment of the present invention.
Fig. 2 is an enlarged view of a portion a in fig. 1 of a manufacturing apparatus of a high purity boron crystal and a high purity boron powder disclosed in an embodiment of the present invention.
Fig. 3 is an enlarged view at B in fig. 1 of the manufacturing apparatus of high purity boron crystal and high purity boron powder disclosed in the embodiment of the present invention.
FIG. 4 is a view showing the configuration of a first clamp ring of an apparatus for producing high purity boron crystal and high purity boron powder according to the embodiment of the present invention.
FIG. 5 is a view showing the structure of a second clamp ring of an apparatus for producing high purity boron crystal and high purity boron powder according to the embodiment of the present invention.
Fig. 6 is an enlarged view of C in fig. 2 of the apparatus for producing high purity boron crystal and high purity boron powder disclosed in the embodiment of the present invention.
Fig. 7 is an enlarged view of D in fig. 3 of the manufacturing apparatus of high purity boron crystal and high purity boron powder disclosed in the embodiment of the present invention.
In the figure, 1, a seat body; 11. a chamber; 12. a pipe body; 13. a first sealing cover; 14. a second sealing cover; 15. a first channel; 16. a second channel; 21. a first conductive rod; 22. a second conductive rod; 23. a first jack; 24. a second jack; 3. a first electrode; 31. a first stud; 4. a second electrode; 41. a second stud; 5. a first clamp ring; 51. a first through hole; 52. A second through hole; 53. a first end face; 54. a second end face; 6. a second clamping ring; 61. a third through hole; 62. a fourth via hole; 63. a third end face; 64. a fourth end face; 7. resistance wire.
Detailed Description
The following detailed description of embodiments of the present invention is provided in connection with the accompanying drawings and examples. The following examples are intended to illustrate the invention but are not intended to limit the scope of the invention.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like, indicate orientations and positional relationships based on those shown in the drawings, and are used only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be considered as limiting the present invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless otherwise expressly stated or limited, "above" or "below" a first feature means that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact with each other via another feature therebetween. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
As shown in fig. 1, the apparatus for preparing high purity boron crystal and high purity boron powder according to the preferred embodiment of the present invention comprises a base 1 having a cavity 11, a first conductive rod 21 disposed in the cavity 11 and having a first conductive rod 21 and a second conductive rod 22, a second conductive rod 22 disposed in the cavity 11, a first electrode 3 electrically connected to the first conductive rod 21, a second electrode 4 electrically connected to the second conductive rod 22, and a resistance wire 7 having a straight shape and having a first end and a second end; a first jack 23 is arranged on the side surface of the first conductive rod 21, and a second jack 24 is arranged on the side surface of the second conductive rod 22; the first end is inserted into the first insertion hole 23, and the second end is inserted into the second insertion hole 24; a first clamping ring 5 is sleeved on the first conductive rod 21, and a first gap for clamping the resistance wire 7 is formed between the first clamping ring 5 and the side surface of the first conductive rod 21; the second conductive rod 22 is sleeved with a second clamping ring 6, and a second gap for clamping the resistance wire 7 is formed between the second clamping ring 6 and the side surface of the second conductive rod 22. It should be noted that the first gap is a minimum distance between the inner wall of the first clamping ring 5 and the first conductive rod 21, and the second gap is a minimum distance between the inner wall of the second clamping ring 6 and the second conductive rod 22. After the first and second conductive rods 21 and 22 are provided with the plurality of resistance wires 7, the first and second clamping rings 5 and 6 are operated to slide to the corresponding positions of the resistance wires 7, the first end of the resistance wire 7 is clamped between the inner wall of the first clamping ring 5 and the first conductive rod 21, and the second end of the resistance wire 7 is clamped between the inner wall of the second clamping ring 6 and the second conductive rod 22. During clamping, the smaller the first gap and the second gap, the better the clamping effect, and the larger the abrasion of the resistance wire 7, so that the first gap and the second gap are determined according to the actual use requirement. Meanwhile, the number of the resistance wires 7 is also determined according to the actual use requirement, and the more the resistance wires 7 are, the more the deposited crystal amount is.
When the embodiment is used for preparing boron crystal and boron powder, the base body 1, the first conductive rod 21, the second conductive rod 22, the first electrode 3, the second electrode 4 and the resistance wire 7 need to be assembled first, so that the components are fixedly connected with each other. After the resistance wires 7 are arranged on the first conductive rod 21 and the second conductive rod 22, when the first clamping ring 5 and the second clamping ring 6 slide to the corresponding resistance wires 7, the end face of the first clamping ring 5 is firstly contacted with the first end of the resistance wires 7 to push and bend the first end, and on the other hand, the end face of the second clamping ring 6 is firstly contacted with the second end of the resistance wires 7 to push and bend the second end. From this, resistance wire 7 is extruded fixedly, and first clamp ring 5 and second clamp ring 6 are big with the frictional force of resistance wire 7 simultaneously, are difficult for dropping, consequently, the resistance wire 7 of this embodiment installation is firm, should not loosen and take off, when needing to pull down, utilize first clamp ring 5 of external force slip and second clamp ring 6 can. In operation, the first electrode 3 is powered by the power supply, and current flows from the first electrode 3 into the first conductive rod 21; after passing through the resistance wire 7, the current finally flows out of the second electrode 4. The resistance wire 7 generates heat, the temperature of the cavity 11 rises, the material in the cavity 11 is heated to crack, and if the cracked product is attached to the resistance wire 7, crystals are formed; if the cracked product floats in the chamber 11 and lacks attachment points, powder is formed. When in use, the number of the resistance wires 7 can be adjusted so as to adjust the amount of crystals formed on the deposited resistance wires. The resistance wire of this embodiment installation is firm, and difficult pine takes off, and the dismouting is convenient, and the packaging efficiency is high, and can be according to the actual production condition, through the quantity that changes resistance wire 7, adjustment process parameter, the preparation volume of adaptability adjustment crystal, and then realize the high-efficient utilization of material.
Specifically, in one embodiment, the resistance wire 7, the first insertion hole 23 and the second insertion hole 24 are all provided in plurality, the first insertion holes 23 are distributed annularly around the axis of the first conductor bar 21, and the second insertion holes 24 are distributed annularly around the axis of the second conductor bar 22; the resistance wires 7, the first insertion holes 23 and the second insertion holes 24 correspond to each other one by one, the first ends of the resistance wires 7 are respectively inserted into the corresponding first insertion holes 23, and the second ends of the resistance wires 7 are respectively inserted into the corresponding second insertion holes 24.
Specifically, in one embodiment, referring to fig. 2-3, the base 1 includes a tube 12 with openings at two ends, a first sealing cover 13 detachably connected to one end of the tube 12, and a second sealing cover 14 detachably connected to the other end of the tube 12; the first sealing cover 13 also seals one end of the tubular body 12, and the second sealing cover 14 seals the other end of the tubular body 12; the chamber 11 is enclosed by the first sealing cover 13, the second sealing cover 14 and the tubular body 12.
Preferably, in an embodiment, referring to fig. 2, an inner side of a lower end of the first sealing cover 13 is provided with an inner thread, an outer wall of the tube 12 is sleeved with a first sleeve, an outer thread is provided on a circumferential surface of the first sleeve, a lower end of the first sealing cover 13 is spirally connected to the circumferential surface of the first sleeve, a first spring ring is provided between the first sleeve and the first sealing cover 13, and the first spring ring is pressed to seal a passage through which one end of the tube 12 communicates with the outside. Further, the lower end surface of the first sealing cover 13 is attached to the end surface of one end of the pipe body 12, so as to better seal one end of the pipe body 12.
Preferably, in an embodiment, referring to fig. 3, an inner side of an upper end of the second sealing cover 14 is provided with an internal thread, an outer wall of the tube 12 is sleeved with a second sleeve, an outer thread is provided on a circumferential surface of the second sleeve, a lower end of the second sealing cover 14 is spirally connected to the circumferential surface of the second sleeve, a second spring ring is provided between the second sleeve and the second sealing cover 14, and the second spring ring is pressed to close a passage through which one end of the tube 12 communicates with the outside. Further, the upper end surface of the second sealing cap 14 is fitted to the end surface of the other end of the pipe body 12 to better seal the other end of the pipe body 12.
Specifically, in an embodiment, referring to fig. 2, a first through hole is formed on the first sealing cover 13, the first electrode 3 passes through the first through hole and extends out of the chamber 11, and a portion of the first electrode 3 extending out of the chamber 11 is connected to a power supply; the second sealing cover 14 is provided with a second through hole and extends out of the cavity 11. The second electrode 4 penetrates through the second via hole and extends out of the chamber 11, and the part of the second electrode 4 extending out of the chamber 11 is connected with a power supply.
Preferably, in an embodiment, referring to fig. 2, a first groove is formed at an upper end of the first sealing cover 13, a bottom of the first groove is communicated with the first via hole, the first electrode 3 further penetrates through the first groove, and an internal thread is formed on a side wall of the groove; the first electrode 3 is sleeved with a third sleeve, the circumferential surface of the third sleeve is provided with external threads, and the first sealing cover 13 and the first electrode 3 are connected into a whole through threads.
Preferably, in an embodiment, referring to fig. 3, a second groove is formed at a lower end of the second sealing cover 14, a bottom of the second groove is communicated with the second via hole, the second electrode 4 further penetrates through the second groove, and an internal thread is formed on a side wall of the groove; the second electrode 4 is sleeved with a fourth sleeve, the circumferential surface of the third sleeve is provided with external threads, and the second sealing cover 14 and the second electrode 4 are connected into a whole through threads.
Specifically, in one embodiment, referring to fig. 3, the seat body 1 is provided with a first channel 15 and a second channel 16 respectively connected to the chamber 11. After the first sealing cover 13, the second sealing cover 14 and the pipe body 12 are spliced into a whole, materials are added from the first channel 15, and crystals and powder formed after reaction flow out from the second channel 16. Further, the first passage 15 and the second passage 16 are provided on the outer wall of the pipe body 12.
Specifically, in one embodiment, referring to fig. 2, a first fitting hole is formed on an end surface of the first electrode 3 facing the first conductive rod 21, and the first conductive rod 21 is inserted into the first fitting hole; a first threaded hole communicated with the first matching hole is formed in the side surface of the first electrode 3, a first stud 31 is matched in the first threaded hole, the end part of the first stud 31 is pressed against the first conductive rod 21, and force for pressing the first conductive rod 21 on the side wall of the first matching hole is applied to the first conductive rod 21. The first conductive rod 21 and the first electrode 3 of the present embodiment are detachably connected to each other through the first fitting hole, the first screw hole, and the first stud 31, so that the first conductive rod 21 can be detached from the first electrode 3, and the first conductive rod 21 can be maintained or replaced.
Specifically, in one embodiment, referring to fig. 3, a second fitting hole is formed on an end surface of the second electrode 4 facing the second conductive rod 22, and the second conductive rod 22 is inserted into the second fitting hole; a second threaded hole communicated with the second matching hole is formed in the side surface of the second electrode 4, a second stud 41 is matched in the second threaded hole, the end part of the second stud 41 is pressed against the second conducting rod 22, and a force for pressing the second conducting rod 22 on the side wall of the second matching hole is applied to the second conducting rod 22. The second conductive rod 22 and the second electrode 4 of the present embodiment are detachably connected to each other through the second fitting hole, the second screw hole, and the second stud 41, so that the second conductive rod 22 can be detached from the second electrode 4, and the second conductive rod 22 can be maintained or replaced.
Specifically, in one embodiment, referring to fig. 4, the first clamping ring 5 has a first end surface 53 and a second end surface 54, the first end surface 53 is provided with a first through hole 51, and the second end surface 54 is provided with a second through hole 52 communicated with the first through hole 51; the first conductive rod 51 sequentially passes through the first through hole 51 and the second through hole 52; the second through hole 52 faces the resistance wire 7, and the inner diameter of the second through hole 52 is gradually increased in the direction from the first end surface 53 to the second end surface 54, so as to form a first wedge-shaped surface for extruding and bending the resistance wire 7. The second clamping ring 6 is provided with a third end surface 63 and a fourth end surface 64, the third end surface 63 is provided with a third through hole 61, and the fourth end surface 64 is provided with a fourth through hole 62 communicated with the third through hole 61; the second current-conducting rod 22 sequentially passes through the third through hole 61 and the fourth through hole 62; the third through hole 61 faces the resistance wire 7, and the inner diameter of the third through hole 61 is gradually increased in the direction in which the fourth end surface 64 faces the third end surface 63, so as to form a second wedge-shaped surface for extruding and bending the resistance wire 7. When the first clamping ring 5 slides, the second through hole 52 slides towards the resistance wire 7, the first end is firstly contacted with the large inner diameter of the first wedge-shaped surface, and then the inner diameter of the first clamping ring 5 corresponding to the first end is gradually reduced along with the continuous sliding of the first clamping ring 5, so that the first end is bent. When the second clamping ring 6 slides, the third through hole 61 slides towards the resistance wire 7, the second end is firstly contacted with the large inner diameter of the second wedge-shaped surface, and then the inner diameter of the second clamping ring 6 corresponding to the second end is gradually reduced along with the continuous sliding of the second clamping ring 6, so that the second end is bent. In the embodiment, the resistance wire 7 is bent by using the first wedge-shaped surface and the second wedge-shaped surface, so that the resistance wire 7 can be prevented from being damaged in the bending process.
Specifically, in one embodiment, referring to fig. 4, the minimum inner diameter of the second through hole 52 is equal to the inner diameter of the first through hole 51, and the minimum inner diameter of the third through hole 61 is equal to the inner diameter of the fourth through hole 62. In the embodiment, the transitional arrangement of the first through hole 51 and the second through hole 52, and the transitional arrangement of the third through hole 61 and the fourth through hole 62 further reduce the risk of damage to the resistance wire 7 during bending.
Specifically, in one embodiment, the first and second conductive rods 21 and 22 are both tungsten rods, which have good conductive effect. The resistance wire 7 is a tungsten wire, so that the heating effect is good, and the heating speed of the cavity 11 is high.
Specifically, referring to fig. 2 to 3, in one embodiment, the first electrode 3 and the second electrode 4 are both water-cooled electrodes, and cooling water flows into the first electrode 3 and the second electrode 4 to cool the first electrode 3 and the second electrode 4, so that the tungsten filament with high heat generation can be used. During assembly, the first electrode 3, the first sealing cover 13, the tube 12, the first conductive rod 21, the second conductive rod 22, the second electrode 4 and the second sealing cover 14 are connected to each other by screw threads, so that they are fixedly connected to each other.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an illustrative embodiment," "an example," "a specific example," or "some examples" or the like mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
While embodiments of the invention have been shown and described, it will be understood by those of ordinary skill in the art that: various changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.

Claims (10)

1. A preparation device of high-purity boron crystal and high-purity boron powder is characterized by comprising a base body with a cavity, a first conducting rod arranged in the cavity, a second conducting rod arranged in the cavity, a first electrode electrically connected with the first conducting rod, a second electrode electrically connected with the second conducting rod, and a linear resistance wire with a first end and a second end;
a first jack is arranged on the side surface of the first conductive rod, and a second jack is arranged on the side surface of the second conductive rod; the first end is inserted into the first jack, and the second end is inserted into the second jack;
a first clamping ring is sleeved on the first conductive rod, and a first gap for clamping the resistance wire is formed between the first clamping ring and the side surface of the first conductive rod; and a second clamping ring is sleeved on the second conductive rod, and a second gap for clamping the resistance wire is formed between the second clamping ring and the side surface of the second conductive rod.
2. The apparatus for producing a high-purity boron crystal and a high-purity boron powder according to claim 1, wherein a plurality of resistance wires, a plurality of first insertion holes and a plurality of second insertion holes are provided, the plurality of first insertion holes are annularly distributed around an axis of the first conductor bar, and the plurality of second insertion holes are annularly distributed around an axis of the second conductor bar; the resistance wires, the first jacks and the second jacks are in one-to-one correspondence, the first ends of the resistance wires are respectively inserted into the corresponding first jacks, and the second ends of the resistance wires are respectively inserted into the corresponding second jacks.
3. The apparatus for producing a high purity boron crystal and a high purity boron powder as claimed in claim 1, wherein said base body comprises a tubular body open at both ends, a first seal cap detachably attached to one end of said tubular body, and a second seal cap detachably attached to the other end of said tubular body;
the first sealing cover seals one end of the pipe body, and the second sealing cover seals the other end of the pipe body; the cavity is enclosed by the first sealed lid, the second sealed lid and body.
4. The apparatus for producing a high purity boron crystal and a high purity boron powder according to claim 3, wherein said first sealing lid is provided with a first via hole, and said first electrode passes through said first via hole and extends to the outside of said chamber; and a second through hole is formed in the second sealing cover, and the second electrode penetrates through the second through hole and extends out of the cavity.
5. The apparatus according to claim 1, wherein said holder body is provided with a first passage and a second passage communicating with said chamber, respectively.
6. The apparatus for producing a high purity boron crystal and a high purity boron powder according to claim 1, wherein a first fitting hole is provided on an end face of said first electrode facing said first electrically conductive rod, and said first electrically conductive rod is inserted into said first fitting hole.
7. The apparatus for producing a high purity boron crystal and a high purity boron powder according to claim 1, wherein a second fitting hole is provided on an end surface of said second electrode facing said second electrically conductive rod, and said second electrically conductive rod is inserted into said second fitting hole.
8. The apparatus for producing a high purity boron crystal and a high purity boron powder as claimed in claim 1, wherein said first clamp ring has a first end face and a second end face, said first end face being provided with a first through hole, said second end face being provided with a second through hole communicating with said first through hole; the first conductive rod sequentially penetrates through the first through hole and the second through hole;
the second through hole faces the resistance wire, and the inner diameter of the second through hole is gradually increased in the direction from the first end face to the second end face;
the second clamping ring is provided with a third end surface and a fourth end surface, the third end surface is provided with a third through hole, and the fourth end surface is provided with a fourth through hole communicated with the third through hole; the second conductive rod sequentially penetrates through the third through hole and the fourth through hole;
the third through hole faces the resistance wire, and the inner diameter of the third through hole is gradually increased in the direction that the fourth end face faces the third end face.
9. The apparatus for producing a high purity boron crystal and a high purity boron powder according to claim 8, wherein a minimum inner diameter of said second through hole is equal to an inner diameter of said first through hole, and a minimum inner diameter of said third through hole is equal to an inner diameter of said fourth through hole.
10. The apparatus for producing a high-purity boron crystal and a high-purity boron powder according to claim 1, wherein said first conductor bar and said second conductor bar are both tungsten bars; the first electrode and the second electrode are both water-cooled electrodes.
CN202011200531.7A 2020-10-30 2020-10-30 Preparation facilities of high-purity boron crystal and high-purity boron powder Pending CN112279260A (en)

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