CN102301457B - 电浆蚀刻装置 - Google Patents

电浆蚀刻装置 Download PDF

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Publication number
CN102301457B
CN102301457B CN2009801552603A CN200980155260A CN102301457B CN 102301457 B CN102301457 B CN 102301457B CN 2009801552603 A CN2009801552603 A CN 2009801552603A CN 200980155260 A CN200980155260 A CN 200980155260A CN 102301457 B CN102301457 B CN 102301457B
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CN
China
Prior art keywords
plasma
substrate
generation space
plasma generation
main body
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Application number
CN2009801552603A
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English (en)
Chinese (zh)
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CN102301457A (zh
Inventor
山本孝
野沢善幸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Precision Products Co Ltd
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Sumitomo Precision Products Co Ltd
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Publication of CN102301457A publication Critical patent/CN102301457A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/095—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by irradiating with electromagnetic or particle radiation

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Paper (AREA)
CN2009801552603A 2009-03-31 2009-12-10 电浆蚀刻装置 Active CN102301457B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009084137A JP4977730B2 (ja) 2009-03-31 2009-03-31 プラズマエッチング装置
JP2009-084137 2009-03-31
PCT/JP2009/070643 WO2010113358A1 (ja) 2009-03-31 2009-12-10 プラズマエッチング装置

Publications (2)

Publication Number Publication Date
CN102301457A CN102301457A (zh) 2011-12-28
CN102301457B true CN102301457B (zh) 2013-09-25

Family

ID=42827680

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2009801552603A Active CN102301457B (zh) 2009-03-31 2009-12-10 电浆蚀刻装置

Country Status (7)

Country Link
US (1) US20120006490A1 (https=)
EP (1) EP2416351B1 (https=)
JP (1) JP4977730B2 (https=)
KR (1) KR20120009419A (https=)
CN (1) CN102301457B (https=)
TW (1) TWI476829B (https=)
WO (1) WO2010113358A1 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013028313A1 (en) * 2011-08-19 2013-02-28 Mattson Technology, Inc. High efficiency plasma source
JP5821039B2 (ja) * 2011-11-07 2015-11-24 パナソニックＩｐマネジメント株式会社 プラズマ処理装置
JP5485327B2 (ja) * 2012-04-16 2014-05-07 Ｓｐｐテクノロジーズ株式会社 プラズマ密度調整部材
CN104871297B (zh) * 2012-09-27 2017-07-18 Spp科技股份有限公司 等离子蚀刻装置
GB201318249D0 (en) * 2013-10-15 2013-11-27 Spts Technologies Ltd Plasma etching apparatus
DE102014216195A1 (de) * 2014-08-14 2016-02-18 Robert Bosch Gmbh Vorrichtung zum anisotropen Ätzen eines Substrats und Verfahren zum Betreiben einer Vorrichtung zum anisotropen Ätzen eines Substrats
JP6444794B2 (ja) * 2015-03-30 2018-12-26 Ｓｐｐテクノロジーズ株式会社 半導体素子の製造方法及びその製造に用いられるプラズマエッチング装置
US11201036B2 (en) 2017-06-09 2021-12-14 Beijing E-Town Semiconductor Technology Co., Ltd Plasma strip tool with uniformity control
CN114521284B (zh) 2020-08-28 2024-08-09 北京屹唐半导体科技股份有限公司 具有可移动插入件的等离子体剥离工具

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004241437A (ja) * 2003-02-03 2004-08-26 Tokyo Ohka Kogyo Co Ltd プラズマ処理装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001007083A (ja) * 1999-06-18 2001-01-12 Sony Corp プラズマ処理装置及び方法
EP1162646A3 (en) * 2000-06-06 2004-10-13 Matsushita Electric Works, Ltd. Plasma treatment apparatus and method
JP2005531125A (ja) * 2001-10-22 2005-10-13 ユナクシス・ユーエスエイ・インコーポレーテッド パルス化プラズマを使用したフォトマスク基板のエッチングのための方法及び装置
US20030092278A1 (en) * 2001-11-13 2003-05-15 Fink Steven T. Plasma baffle assembly
JP2004079465A (ja) * 2002-08-22 2004-03-11 Shimadzu Corp プラズマ生成装置およびプラズマ処理装置
GB0323001D0 (en) * 2003-10-01 2003-11-05 Oxford Instr Plasma Technology Apparatus and method for plasma treating a substrate
JP4459877B2 (ja) 2004-08-12 2010-04-28 住友精密工業株式会社 エッチング方法及びエッチング装置
JP4578893B2 (ja) 2004-08-20 2010-11-10 住友精密工業株式会社 シリコン材のプラズマエッチング方法及びプラズマエッチング装置
KR100683174B1 (ko) * 2005-06-17 2007-02-15 삼성전자주식회사 플라즈마 가속장치 및 그것을 구비하는 플라즈마 처리시스템

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004241437A (ja) * 2003-02-03 2004-08-26 Tokyo Ohka Kogyo Co Ltd プラズマ処理装置

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
JP特开2001-7083A 2001.01.12
JP特开2004-241437A 2004.08.26

Also Published As

Publication number Publication date
JP2010238847A (ja) 2010-10-21
JP4977730B2 (ja) 2012-07-18
EP2416351A4 (en) 2015-08-12
TWI476829B (zh) 2015-03-11
EP2416351A1 (en) 2012-02-08
EP2416351B1 (en) 2019-08-07
KR20120009419A (ko) 2012-01-31
CN102301457A (zh) 2011-12-28
TW201036061A (en) 2010-10-01
US20120006490A1 (en) 2012-01-12
WO2010113358A1 (ja) 2010-10-07

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SE01 Entry into force of request for substantive examination
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Owner name: SSP TECHNOLOGY A/S

Free format text: FORMER OWNER: SUMITOMO PRECISION SHANGHAI CO., LTD.

Effective date: 20120406

C41 Transfer of patent application or patent right or utility model
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Effective date of registration: 20120406

Address after: Tokyo, Japan

Applicant after: Sumitomo Precision Products Co., Ltd.

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C53 Correction of patent of invention or patent application
CB02 Change of applicant information

Address after: Japan Tokyo Chiyoda Otemachi a chome 3 No. 2 Keidanren hall 15 order

Applicant after: Sumitomo Precision Products Co., Ltd.

Address before: Tokyo, Japan

Applicant before: Sumitomo Precision Products Co., Ltd.

C14 Grant of patent or utility model
GR01 Patent grant