CN102286777A - 氢化物气相外延生长GaN单晶用的H3PO4腐蚀籽晶及其制备方法 - Google Patents
氢化物气相外延生长GaN单晶用的H3PO4腐蚀籽晶及其制备方法 Download PDFInfo
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- CN102286777A CN102286777A CN2011102490393A CN201110249039A CN102286777A CN 102286777 A CN102286777 A CN 102286777A CN 2011102490393 A CN2011102490393 A CN 2011102490393A CN 201110249039 A CN201110249039 A CN 201110249039A CN 102286777 A CN102286777 A CN 102286777A
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- 239000013078 crystal Substances 0.000 title claims abstract description 52
- 238000002360 preparation method Methods 0.000 title claims abstract description 28
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title abstract description 25
- 229910002601 GaN Inorganic materials 0.000 title abstract description 15
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 title abstract description 10
- 235000011007 phosphoric acid Nutrition 0.000 title abstract description 8
- 150000004678 hydrides Chemical class 0.000 title abstract description 6
- 239000012808 vapor phase Substances 0.000 title abstract description 3
- 238000005260 corrosion Methods 0.000 claims abstract description 84
- 230000007797 corrosion Effects 0.000 claims abstract description 72
- 239000000758 substrate Substances 0.000 claims abstract description 49
- 238000000034 method Methods 0.000 claims abstract description 24
- 238000001035 drying Methods 0.000 claims abstract description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000010409 thin film Substances 0.000 claims description 34
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 claims description 27
- 238000000407 epitaxy Methods 0.000 claims description 13
- 229910052594 sapphire Inorganic materials 0.000 claims description 7
- 239000010980 sapphire Substances 0.000 claims description 7
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 239000010408 film Substances 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000010923 batch production Methods 0.000 abstract 1
- 238000007598 dipping method Methods 0.000 abstract 1
- 238000005406 washing Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 12
- 238000005516 engineering process Methods 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 238000010276 construction Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 238000009738 saturating Methods 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000001534 heteroepitaxy Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 241001062009 Indigofera Species 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 208000012868 Overgrowth Diseases 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical group O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000004223 radioprotective effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
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Abstract
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| Application Number | Priority Date | Filing Date | Title |
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| CN2011102490393A CN102286777B (zh) | 2011-08-26 | 2011-08-26 | 氢化物气相外延生长GaN单晶用的H3PO4腐蚀籽晶及其制备方法 |
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| CN2011102490393A CN102286777B (zh) | 2011-08-26 | 2011-08-26 | 氢化物气相外延生长GaN单晶用的H3PO4腐蚀籽晶及其制备方法 |
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| Publication Number | Publication Date |
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| CN102286777A true CN102286777A (zh) | 2011-12-21 |
| CN102286777B CN102286777B (zh) | 2013-11-13 |
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| CN2011102490393A Active CN102286777B (zh) | 2011-08-26 | 2011-08-26 | 氢化物气相外延生长GaN单晶用的H3PO4腐蚀籽晶及其制备方法 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102418143A (zh) * | 2011-11-17 | 2012-04-18 | 山东大学 | 一种以H3PO4腐蚀衬底制备自剥离GaN单晶的方法 |
| CN104060323A (zh) * | 2014-07-14 | 2014-09-24 | 山东大学 | 通过制备N面锥形结构衬底获得自支撑GaN单晶的方法 |
| CN104900779A (zh) * | 2015-06-25 | 2015-09-09 | 苏州纳维科技有限公司 | 一种iii-v族半导体单晶衬底孔洞消除之后的表面结构及其制备方法 |
| CN107326444A (zh) * | 2017-07-21 | 2017-11-07 | 山东大学 | 一种水热腐蚀多孔衬底生长自支撑氮化镓单晶的方法 |
| CN112708937A (zh) * | 2020-12-18 | 2021-04-27 | 山东大学 | 一种用于GaN单晶生长衬底的处理方法及处理装置 |
| CN114622274A (zh) * | 2020-12-11 | 2022-06-14 | 中国科学院苏州纳米技术与纳米仿生研究所 | 氮化镓体单晶及其生长方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1870223A (zh) * | 1999-09-28 | 2006-11-29 | 住友电气工业株式会社 | 氮化镓单晶的生长方法,氮化镓单晶基板及其制造方法 |
| CN101432471A (zh) * | 2006-04-28 | 2009-05-13 | 住友电气工业株式会社 | 制作氮化镓结晶的方法及氮化镓晶片 |
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- 2011-08-26 CN CN2011102490393A patent/CN102286777B/zh active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1870223A (zh) * | 1999-09-28 | 2006-11-29 | 住友电气工业株式会社 | 氮化镓单晶的生长方法,氮化镓单晶基板及其制造方法 |
| CN101432471A (zh) * | 2006-04-28 | 2009-05-13 | 住友电气工业株式会社 | 制作氮化镓结晶的方法及氮化镓晶片 |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102418143A (zh) * | 2011-11-17 | 2012-04-18 | 山东大学 | 一种以H3PO4腐蚀衬底制备自剥离GaN单晶的方法 |
| CN104060323A (zh) * | 2014-07-14 | 2014-09-24 | 山东大学 | 通过制备N面锥形结构衬底获得自支撑GaN单晶的方法 |
| CN104900779A (zh) * | 2015-06-25 | 2015-09-09 | 苏州纳维科技有限公司 | 一种iii-v族半导体单晶衬底孔洞消除之后的表面结构及其制备方法 |
| CN107326444A (zh) * | 2017-07-21 | 2017-11-07 | 山东大学 | 一种水热腐蚀多孔衬底生长自支撑氮化镓单晶的方法 |
| CN114622274A (zh) * | 2020-12-11 | 2022-06-14 | 中国科学院苏州纳米技术与纳米仿生研究所 | 氮化镓体单晶及其生长方法 |
| CN114622274B (zh) * | 2020-12-11 | 2023-08-18 | 中国科学院苏州纳米技术与纳米仿生研究所 | 氮化镓体单晶及其生长方法 |
| CN112708937A (zh) * | 2020-12-18 | 2021-04-27 | 山东大学 | 一种用于GaN单晶生长衬底的处理方法及处理装置 |
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| CN102286777B (zh) | 2013-11-13 |
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Denomination of invention: H3PO4 corrosion seed crystal for growing GaN single crystal by hydride vapor phase epitaxy and preparation method thereof Effective date of registration: 20150424 Granted publication date: 20131113 Pledgee: Qilu bank Limited by Share Ltd Ji'nan section shop branch Pledgor: Shandong Tianyue Advanced Material Technology Co., Ltd. Registration number: 2015990000326 |
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Denomination of invention: H3Po4etched seed crystals for growth of GaN single crystals by hydride vapor phase epitaxy and its preparation Effective date of registration: 20200602 Granted publication date: 20131113 Pledgee: Qilu bank Limited by Share Ltd. Ji'nan Huaiyin branch Pledgor: SICC Co.,Ltd. Registration number: Y2020980002693 |
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Address after: No.99, Tianyue South Road, Huaiyin District, Jinan City, Shandong Province Patentee after: Shandong Tianyue advanced technology Co., Ltd Address before: 3 / F, block C, Yinhe building, Xinluo Road, hi tech Zone, Jinan City, Shandong Province Patentee before: Shandong Tianyue Advanced Materials Technology Co.,Ltd. |
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