CN102264670A - 用于含硅的耐火基底的环境阻挡层 - Google Patents

用于含硅的耐火基底的环境阻挡层 Download PDF

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CN102264670A
CN102264670A CN2009801521732A CN200980152173A CN102264670A CN 102264670 A CN102264670 A CN 102264670A CN 2009801521732 A CN2009801521732 A CN 2009801521732A CN 200980152173 A CN200980152173 A CN 200980152173A CN 102264670 A CN102264670 A CN 102264670A
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rare earth
silicon
fact
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E·库尔科
F·勒比亚
C·卢谢-普耶里
H·塔维
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Universite des Sciences et Tech (Bordeaux 1)
Safran Ceramics SA
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Abstract

本发明涉及保护基底(10)的方法,该基底中与表面相邻的至少一部分由含硅的耐火材料在使用高温下在氧化和潮湿环境中制成,该方法包括在该基底的表面上形成无硼的环境阻挡层,该环境阻挡层具有至少一层(22)实质上由至少一种稀土元素的氧化物、二氧化硅和氧化铝形成的氧化物体系所组成并且其能够在扩展到至少约1400℃的温度范围内通过至少一个固相的持续存在而自复原。

Description

用于含硅的耐火基底的环境阻挡层
技术领域
本发明涉及,对于与表面相邻的至少部分是由含硅耐火材料制成的基底,当其在高温下在氧化和潮湿介质中使用时,通过在基底的表面上形成不含硼的环境阻挡层来保护该基底。
背景技术
特别地,本发明寻求保护由独石陶瓷(céramique monolithique)(例如碳化硅SiC或氮化硅Si3N4)构成的耐火材料,并且更特别地,寻求保护耐火复合材料如含硅的陶瓷基体复合(CMC)材料,例如具有至少部分由SiC组成的基体的CMC。
本发明的特定应用领域是保护形成燃气涡轮的热部件的CMC部件,如用于航空发动机或用于工业涡轮机的燃烧室壁或涡轮环(anneauxde turbine)、涡轮喷嘴或涡轮叶片。
对于这些燃气涡轮,改进效率并降低污染排放的需求正导致在燃烧室中越来越高的温度的使用。
因此,已提议用CMC材料替换金属材料,特别是用于燃烧室或涡轮环的壁。已知CMC材料同时具有使其能够用作结构元件的良好机械性能和在高温下保持这些性能的能力。CMC材料包含由耐火纤维(通常为碳纤维或者陶瓷纤维)制成并用陶瓷基体进行致密化(例如SiC基体)的纤维增强体。
在腐蚀性环境下(氧化氛围,特别是在水分和/或盐水氛围的存在下),由于在CMC材料表面的由氧化形成的二氧化硅(SiO2)的挥发,观察到具有SiC基体的CMC材料的表面后退(réession)现象。
已建议在CMC材料的表面上形成环境阻挡层涂层(EBC)。在一种用于具有SiC基体的CMC材料基底的已知阻挡层中,通过由碱土金属的铝硅酸盐类型化合物(如通常由缩写BSAS引用的BaO0.75.Sr00.25.Al2O3(SiO2)2化合物)制成的层来提供抗腐蚀功能。将由莫来石(mullite)或者由包含BSAS与莫来石的混合物的混合层制成的化学阻挡层插入至基底和抗腐蚀层之间,以避免抗腐蚀层的BSAS和由基底的最终(finale)SiC层氧化所形成的二氧化硅之间的化学相互作用。在基底上形成硅层以使该化学阻挡层能与其结合。在文件US6 866 897和US 6 787 195中特别地描述了该环境阻挡层。通常通过物理沉积(特别是通过热等离子体沉积)来形成各种层。
已在高达约1200℃的温度下观察到该环境阻挡层的令人满意的行为,然而当温度超过1300℃时,观察到了显著的降解。实际上,当使用材料时,在环境阻挡层中倘若产生裂纹或缺陷(例如发裂),由硅制成的结合层或者含硅的基底材料的基体表面容易被氧化为二氧化硅。在约1310℃及以上的温度下,此二氧化硅的形成导致混合的BSAS+莫来石层和/或最终层的BSAS与氧化形成的二氧化硅之间的化学相互作用,从而导致该环境阻挡层依其中缺陷的尺寸或多或少快速且完全地降解。
在F.Smeacetto等人的文章(“Protective coatings for carbon-bondedcarbon-fiber composites”,Ceramics International 34(2008),第1297-1301页)中也提出了保护碳/碳复合材料的方法,其包括通过与熔融的硅进行化学反应并随后沉积包含氧化钇和氧化铝的硅基玻璃涂层来形成SiC表面层。该玻璃通过将其组分氧化物在熔融时混合而制备。该涂层通过表面沉积包含所制备的玻璃粉末的泥釉(barbotine)并继以热处理而形成。可通过升高温度至1375℃使该表面被熔融的玻璃所涂覆来修复涂层中的微裂纹。指定的最高操作温度为1400℃。尽管如此,应观察到,该涂层在1375℃下的熔化使得难以设想在该温度以上使用该涂层,特别是当该表面曝露于高速的气流中时,因为之后该涂层可能被吹离。
文件US 6 759 151公开了保护性涂层,特别是用于含硅的陶瓷的保护性涂层,该涂层包含结合层、至少一层中间层以及外层。该外层是稀土的硅酸盐或是基于氧化铪或氧化锆。
文件US 2003/0138641也涉及用于含硅陶瓷的保护性涂层,该涂层是由具有由稀土的硅酸盐制成的任选的中间层的稳定的氧化锆制成。
文件US 2006/0073361描述了具有稳定的氧化锆外层和可能包含稀土的硅酸盐的功能性中间层的堆叠的保护性涂层。
发明内容
在第一方面,本发明的目的是,通过形成能够在氧化而潮湿的氛围下并且在高达至少1400℃的温度下(包括在高速气流的存在下)保持其有效性的环境阻挡层,提供保护基底的方法,该基底中与表面相邻的至少部分由含硅的耐火材料制成。
通过形成环境阻挡层来实现此目的,该环境阻挡层具有至少一层实质上由至少一种稀土氧化物、二氧化硅和氧化铝形成的氧化物体系所组成的层,该体系在高达至少约1400℃的温度下大部分保持固相,并在等于或高于约1400℃的温度下呈液相,所述液相占所述层全部组成的5摩尔百分数(摩尔%)至40摩尔%,使得所述层能够在扩展到至少约1400℃的温度范围内自复原(auto-cicatriser)同时保持至少一个固相的存在。
在自复原温度下至少一个固相的存在提高了抵抗被吹离的能力。
本文中术语“自复原温度”用于指液相以足够提供自复原功能的量来形成的温度,例如在该自复原层的组成中至少5摩尔%,从而有效堵塞可能出现的任何裂纹,但不超过所述组成中的40摩尔%,从而提供良好的被吹离的抗性。
有利地,所形成的环境阻挡层还包含在基底表面和自复原层之间插入的并且在自复原温度下仍为固态的下层。这避免了将基底的表面直接曝露于自复原层的液相。
下层可实质上由至少一种稀土的硅酸盐或者由莫来石组成。因此,有可能通过实质上将莫来石沉积于在基底上沉积的硅涂层上,或者通过沉积实质上包含从基底旁边的硅开始到与自复原层的界面的莫来石为止渐变的硅-莫来石组合物的涂层,从而形成下层。
在本发明的一个具体实施方式中,自复原层实际上表现为稀土的硅酸盐RE2Si2O7(其中RE为稀土)与莫来石(3Al2O3.2SiO2)的混合物。
在本发明的另一个具体实施方式中,自复原层实际上表现为稀土的铝酸盐RE4Al2O9(其中RE为稀土)与二氧化硅SiO2的混合物。
例如,该稀土为选自钇Y、钪Sc和镧系(例如镱Yb、镝Dy、铒Er和镧La)的至少一种。
本发明还提供包含基底和环境阻挡层的部件,该基底具有与基底表面相邻的至少部分由含硅耐火材料制成,该环境阻挡层不含硼并且在该基底的表面上形成,能够在该部件被用于高达至少约1400℃下的氧化且潮湿的氛围中时(包括高速气流的存在下)保护该基底,该环境阻挡层为通过上文定义的方法所获得的类型。
在具体实施方式中,基底是由包含纤维增强体和基体的复合材料制成,该基体包含至少一个与该基底表面相邻的碳化硅SiC相。
附图说明
通过阅读以非限制性指示的方式给出的以下描述,可更好地理解本发明。参照附图,其中:
●图1为在本发明具体实施方式中的含硅的并且提供了环境阻挡层的复合材料部件的高度示意图;和
●图2至9为通过扫描电子显微镜方法获得的图,显示了各种环境阻挡层的表面状态,其中的一些是根据本发明的环境阻挡层的表面状态。
具体实施方式
在以下的具体描述中,环境阻挡层在含硅的CMC材料的基底上形成。尽管如此,回顾本发明适用于含硅的独石耐火材料基底,并且更普遍地适用于与表面相邻的至少部分由含硅的耐火材料(复合的或单石的)制成的基底。
图1为组成本发明的具体实施方式的提供环境阻挡层20的基底10的高度示意图。
含硅CMC材料的基底10包含可由碳(C)纤维或陶瓷纤维(例如SiC纤维)组成的纤维增强体。该SiC纤维可用热解碳(PyC)、氮化硼(BN)或硼掺杂的碳(BC,其中5原子百分数(原子%)至20原子%为B,平衡量为C)的薄界面层涂覆。通过基体致密化该纤维增强体,该基体全部由含硅材料组成,或至少外部基体相由含硅材料组成,含硅材料例如硅化合物(例如SiC)或Si-B-C三元体系。术语“外部基体相”用于指最后形成的基体相,其距离增强体的纤维最远。在此情况下,基体可由多个呈现不同性质的相组成,例如:
●混合的C-SiC基体(其中SiC在外侧);或
●具有交替的SiC相和刚度较低的相(例如,热解碳(PyC)相、氮化硼(BN)相或硼掺杂的碳(BC)相)的连续基体,其中该基体的终端相(phase terminale)是由SiC制成;或
●具有碳化硼(B4C)或Si-B-C三元体系的基体相,其任选地包含游离碳(B4C+C、Si-B-C+C),并且具有Si-B-C或SiC的终端相的自复原基体。
在以下文件中特别地描述了此CMC材料:US 5 246 736、US 5 965266、US 6 291 058和US 6 068 930。
在基底10的全部外表面上形成环境阻挡层20,或者仅在所述表面的一部分上形成,例如仅该表面的一部分需要被保护时。环境阻挡层20包含自复原外层22和在基底10和自复原层22之间插入的内层或下层24。
自复原层22实质上是氧化物体系的形式,其至少包含:稀土氧化物RE2O3;二氧化硅SiO2;和氧化铝Al2O3;并在下文中称作RE2O3-SiO2-Al2O3体系。该稀土或每种稀土选自Y、Sc和镧系(例如Yb、Dy、Er和La),且优选地选自Y和Yb。除了该氧化物体系,自复原层还可(以少量方式)包括特别地用于调节自复原温度或热膨胀系数的其它组分。因此,可通过加入氧化物例如氧化钛TiO2、氧化锆ZrO2、氧化铪HfO2和/或氧化钒V2O3来提高自复原温度,或者通过加入氧化物例如氧化锌ZnO、氧化镍NiO、氧化锰MnO、氧化钙CaO、氧化镁MgO、氧化钡BaO、氧化锶SrO、氧化铁FeO3或FeO和/或氧化铌Nb2O5而使其降低。对热膨胀系数的调节可通过氧化钽Ta2O5获得。这些其它组分在自复原层的组成中占不多于30摩尔%,且优选地不多于10摩尔%。
尽管如此,忽略不可避免的杂质,该自复原层优选地由RE2O3-SiO2-Al2O3体系组成,且更优选地此体系具有单一稀土氧化物。
选择该层22的组成,以使其能够通过形成液相而自复原,同时在扩展到至少高达1400℃(优选地至少高达1450℃,且可能扩展至高达1700℃)的温度范围内保持固相。
RE2O3-SiO2-Al2O3体系的组成可如下地选择。
对于该体系的所需要的自复原温度,在RE2O3-SiO2-Al2O3相图内搜索在所述温度下在一种或多种固相的存在下产生液体相的组成,该液体相是足够量的,在层22的组成中优选地占至少5摩尔%,更优选地占至少10摩尔%,但不过量,即在层22的组成中优选地占不多于40摩尔%。
下层24可实质上由稀土硅酸盐或者由相同稀土或不同稀土的多种硅酸盐形成。对于给定的稀土RE,该硅酸盐可为RE2SiO5和/或RE2Si2O7和/或RE4.67(SiO4)3O的形式。例如,该稀土或每种稀土可选自例如:Y、Sc和镧系,例如:Yb、Dy、Er和La。当自复原层22具有单一稀土的氧化物并且下层24包含单一稀土的硅酸盐时,该下层24的稀土可与自复原层22的稀土相同,或者可与其不同。
下层24也可实质上通过在基底20上沉积莫来石来形成,可直接地形成,或者与在基底上形成的插入的硅涂层一同形成,以利于莫来石的结合。也有可能通过实质上包含从基底旁边的硅开始到自复原层22旁边的莫来石为止渐变的硅-莫来石组合物的涂层来形成下层。
下层24可以少量方式包含其它组分,例如,一种或多种用于调节其热膨胀系数的氧化物,例如氧化钽Ta2O5。这些其它组分占不多于该下层24的组成的30摩尔%,优选地不多于10摩尔%。在使用条件下保持下层24的化学稳定性和热稳定性并保持其与基底以及与二氧化硅的化学相容性和热机械相容性是重要的。换言之,在自复原层22的自复原所需要的温度下,需要将下层24保持在固态从而避免任何基底10和自复原层22之间的直接接触,并避免与基底和包含于自复原层22中的或由基底10的硅氧化而成的二氧化硅形成液相。还需要使下层24的热膨胀系数相对地接近于基底10和自复原层22的热膨胀系数。
忽略杂质,下层24优选地由单一稀土的硅酸盐组成。
可在基底10上通过等离子体喷涂而形成下层24,其始于RE2O3和SiO2的固体粉末和/或化合物RE2SiO5、RE2Si2O、RE4.67(SiO4)3O的粉末以及可能其它少量组分的粉末。
以相似的方式,可在下层24上通过等离子体喷涂而形成自复原外层22,其始于RE2O3、SiO2和Al2O3的固体粉末和/或如RE2SiO5、RE2SiO2O7、RE4.67(SiO4)3O、莫来石(3Al2O3-2SiO2)、RE3Al5O12、RE4Al2O9、REAlO3的化合物的粉末以及任选地其它少量组分的粉末,该喷涂的粉末的各自的量作为所需要的最终组合物的函数来选择。
可想到沉积下层24和自复原外层22的其它方法,例如以溶胶-凝胶形式传送颗粒、以泥釉的形式应用颗粒、通过电泳而沉积、物理气相沉积(PVD)或者化学气相沉积(CVD)。
选择相对小的下层24的厚度,例如在10微米(μm)至300微米的范围,也可选择相对小的自复原层的厚度,例如在10微米至300微米的范围。该厚度还可取决于所使用的用于形成均相的且厚度基本均匀的薄层的沉积过程的能力。因此,为了小的厚度,可优选使用PVD或CVD类型的沉积过程。
维持固相的自自复原外层的存在使其有可能具有在自复原温度下有效、密封且持久的环境阻挡层。倘若回到低于自复原温度的温度,该液相会结晶,通过以并排的晶粒形式的涂层继续提供密封性。倘若出现了裂纹,将温度升高至自复原温度会足以堵塞该裂纹。
实施例1:
如下地提供具有环境阻挡层的包含由SiC纤维和SiC基体制成的纤维增强体的SiC/SiC复合材料基底:
●在SiC/SiC基底上通过等离子体喷涂由Y2Si2O7粉末而沉积硅酸钇Y2Si2O7的下层,该下层具有约200微米的厚度;和
●通过等离子体喷涂在下层上而沉积外层,该外层始于莫来石(15摩尔%)和Y2Si2O7(85摩尔%)的粉末的混合物,得到形成Y2O3(53.61重量百分数(重量%)),SiO2(33.57重量%)和Al2O3(12.82重量%)体系的组成,其中该外层的厚度为约100微米。
在1400℃和1450℃下,该外层具有能够将环境阻挡层中出现的裂纹密封的液相,并在1400℃下具有两个固相,而在1450℃下具有一个固相。
图2显示在空气中在1400℃下已将其温度升高后50小时(h)的外层的部分表面,而图3显示在空气中在1450℃下20小时后的外层的部分表面。可见由Y2Si2O7(白)和Al2O3(黑)的晶粒所形成的固相,以及占据固体晶粒之间的全部空间的液相,从而为环境阻挡层提供密封性。液相具有以下转熔反应的组成:莫来石+Y2Si2O7→Al2O3+液相,该液相的组成为12.8原子%的Al、15.75原子%的Si、8.3原子%的Y以及63.15原子%的O。在外层的组成中,此液相在1400℃下占10摩尔%至15摩尔%,而在1450℃下占15摩尔%至20摩尔%。
图4显示在1450℃下经20小时并随后在1200℃下经90小时后的外层的部分表面。该液相已结晶,而通过并排的晶粒提供该涂层的密封性。
实施例2:
如实施例1中的流程,但外层由莫来石(41.2摩尔%)和Y2Si2O7(58.8摩尔%)的粉末的混合物而形成,得到形成如下体系的组成:Y2O3(35.04重量%)、SiO2(31.71重量%)和Al2O3(33.25重量%)。
图5显示在空气中在1400℃下经50小时后的外层的部分表面。与实施例1的液相相同,该液相占据了Y2Si2O7(白)与莫来石和Al2O3(黑)的晶粒之间的全部空间,从而提供自复原。在该外层的组成中,该液相占约5摩尔%至8摩尔%。
应观察到,该外层在1450℃下熔融,其中液相的量变得过量。
实施例3:
如实施例1中的流程,但外层由莫来石(54.4摩尔%)和Y2Si2O7(45.6摩尔%)的粉末的混合物而形成,得到形成如下体系的组成:Y2O3(26.43重量%)、SiO2(30.85重量%)和Al2O3(42.72重量%)。
图6显示在空气中在1400℃下经50小时后的外层的部分表面。实质上形成了与实施例1的液相相同的液相,但液相的量不足,因此仍有孔。因此并不能完全实现自复原。在该外层的组成中,该液相显著地占少于5摩尔%。
在1450℃下,该外层已熔化,其中液体的量变得过量。
实施例4:
如实施例1中的流程,但外层由莫来石(80摩尔%)和Y2Si2O7(20摩尔%)的粉末的混合物而形成,得到形成如下体系的组成:Y2O3(11.01重量%)、SiO2(29.31重量%)和Al2O3(59.68重量%)。
图7显示在空气中在1400℃下经50小时后的外层的部分表面。实质上形成了与实施例1的液相相同的液相,然而,如实施例3,液相的量不足以提供令人满意的复原。在该外层的组成中,该液相显著地占少于5摩尔%。
在1450℃下,该外层熔化,其中液相的量变得过量。
实施例1至4显示,通过由莫来石和Y2Si2O7的混合物形成外层,莫来石的摩尔百分数应优选地少于50%,在该外层的组成中液相占不多于20摩尔%。
实施例5:
如实施例1中的流程,但外层由以下粉末的混合物形成:铝酸钇Y4Al2O9(8摩尔%)和SiO2(92摩尔%),得到形成如下体系的组成:Y2O3(36.29重量%)、SiO2(55.52重量%)和Al2O3(8.19重量%)。
图8显示在空气中在1400℃下经50小时后的外层的部分表面。可见由Y2Si2O7(白)和SiO2(黑)的晶粒形成的固相以及占据晶粒之间的全部空间并提供环境阻挡层的密封的液相。以重量计,该液相近似地具有如下的组成:Y2O3(35%)、SiO2(50%)和Al2O3(15%)。在该外层中,该液相占约10摩尔%至15摩尔%。
实施例6:
如实施例1的流程,但将下层和外层中的Y2Si2O7替换为硅酸镱Yb2Si2O7,该外层包含15摩尔%的莫来石和85摩尔%的Yb2Si2O7
图9显示在空气中在1450℃下经20小时后的外层的部分表面,可见,在主要由Yb2Si2O7和Al2O3以及莫来石的晶粒形成的固相的存在下,存在提供有效修复的液相。在外层中的液相占约5摩尔%至约8摩尔%,并且其具有如下组成:52.25原子%的O、13.38原子%的Al、17.84原子%的Si以及16.53原子%的Yb。

Claims (12)

1.一种通过在基底的表面上形成不含硼的环境阻挡层从而在高温下在氧化和潮湿介质中使用时保护基底的方法,所述基底具有由含硅耐火材料制成的与表面相邻的至少部分,
该方法的特征在于,所形成的环境阻挡层具有至少一层实质上由至少一种稀土氧化物、二氧化硅和氧化铝形成的氧化物体系所组成的层,所述体系在高达至少约1400℃下大部分保持固相,并在等于或高于约1400℃的温度下呈液相,所述液相占所述层全部组成的5摩尔%至40摩尔%的范围,使得所述层能够在扩展到至少约1400℃的温度范围内自复原同时保持至少一个固相的存在。
2.根据权利要求1所述的方法,其特征在于形成还包含在所述基底的表面和所述自复原层之间插入的并且在所述自复原温度下仍为固态的下层的环境阻挡层。
3.根据权利要求2所述的方法,其特征在于下层的形成选自:
●实质上由至少一种稀土的硅酸盐组成的下层;
●实质上由莫来石组成的下层;
●实质上由在基底上形成的硅涂层上沉积的莫来石组成的下层;和
●实质上具有从所述基底旁边的硅开始到所述自复原层旁边的莫来石为止渐变的硅-莫来石组合物的下层。
4.根据权利要求1至3中任一项所述的方法,其特征在于所述自复原层实质上表现为稀土的硅酸盐RE2Si2O7与莫来石3Al2O3.2SiO2的混合物,其中RE为稀土。
5.根据权利要求1至3中任一项所述的方法,其特征在于所述自复原层实质上表现为稀土的铝酸盐RE4Al2O9与二氧化硅SiO2的混合物,其中RE为稀土。
6.根据权利要求1至5中任一项所述的方法,其特征在于所述稀土为选自钇、钪和镧系特别是镱和铒的至少一种。
7.一种包含基底和环境阻挡层的部件,该基底具有由含硅耐火材料制成的与基底的表面相邻的至少部分,该环境阻挡层不含在该基底的表面上形成的硼并且能够在高温下在氧化且潮湿的介质中使用时保护所述基底,
所述部件的特征在于所述环境阻挡层具有至少一层实质上由至少一种稀土氧化物、二氧化硅和氧化铝形成的氧化物体系所组成的层,所述体系在高达至少约1400℃下大部分保持固相并在等于或高于约1400℃的温度下呈液相,所述液相占所述层全部组成的5摩尔%至40摩尔%的范围,使得所述层能够在扩展到至少约1400℃的温度范围内自复原同时保持至少一个固相的存在。
8.根据权利要求7所述的部件,其特征在于所述环境阻挡层进一步包含在所述基底的表面和所述自复原层之间插入下层,该下层选自:
●实质上由至少一种稀土的硅酸盐组成的下层;
●实质上由莫来石组成的下层;
●实质上由在基底上形成的硅涂层上沉积的莫来石组成的下层;和
●实质上具有从所述基底旁边的硅开始到所述自复原层旁边的莫来石为止渐变的硅-莫来石组合物的下层。
9.根据权利要求7或8所述的部件,其特征在于所述自复原层实质上表现为稀土的硅酸盐RE2Si2O7与莫来石3Al2O3.2SiO2的混合物,其中RE为稀土。
10.根据权利要求7或8所述的部件,其特征在于所述自复原层实质上表现为稀土的铝酸盐RE4Al2O9与二氧化硅SiO2的混合物,其中RE为稀土。
11.根据权利要求7至10中任一项所述的部件,其特征在于所述稀土为选自钇、钪和镧系特别是镱和铒的至少一种。
12.根据权利要求7至11中任一项所述的部件,其特征在于所述基底是由包含纤维增强体和基体的复合材料制成,所述基体包含至少一个与所述基底表面相邻的碳化硅SiC相。
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