CN102253328B - 存储芯片位线失效分析方法 - Google Patents
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- 239000011229 interlayer Substances 0.000 claims abstract description 14
- 238000002161 passivation Methods 0.000 claims abstract description 12
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- 238000002389 environmental scanning electron microscopy Methods 0.000 claims description 5
- 238000001039 wet etching Methods 0.000 claims description 5
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 3
- 238000001020 plasma etching Methods 0.000 claims description 3
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CN102253328A CN102253328A (zh) | 2011-11-23 |
CN102253328B true CN102253328B (zh) | 2013-07-10 |
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Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104568533B (zh) * | 2013-10-23 | 2017-03-15 | 中芯国际集成电路制造(上海)有限公司 | Tem分析样品的制备方法 |
CN104020408B (zh) * | 2014-05-26 | 2016-07-06 | 武汉新芯集成电路制造有限公司 | 存储芯片位线失效分析方法 |
CN104064224B (zh) * | 2014-06-24 | 2017-03-08 | 武汉新芯集成电路制造有限公司 | 一种闪存芯片漏电失效分析的方法 |
CN104037077A (zh) * | 2014-06-27 | 2014-09-10 | 宜特科技(昆山)电子有限公司 | 一种半导体芯片的蚀刻方法 |
CN104316813A (zh) * | 2014-08-11 | 2015-01-28 | 上海华虹宏力半导体制造有限公司 | 判定异常短接位置的电压衬度方法 |
CN105842264B (zh) * | 2015-01-15 | 2018-10-23 | 中芯国际集成电路制造(上海)有限公司 | 失效点的定位方法及芯片的失效分析方法 |
CN104733342B (zh) * | 2015-03-24 | 2018-06-26 | 武汉新芯集成电路制造有限公司 | 一种定位双位线桥接的方法 |
CN106206343B (zh) * | 2015-05-07 | 2019-01-25 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件测试方法 |
CN106206344B (zh) * | 2015-05-08 | 2019-02-01 | 中芯国际集成电路制造(上海)有限公司 | 一种确定连通存储元件中的接触塞的缺陷的方法 |
CN106469662B (zh) * | 2015-08-19 | 2019-07-30 | 中芯国际集成电路制造(上海)有限公司 | 金属缺陷的检测方法及检测结构的形成方法 |
CN105699875B (zh) * | 2016-01-15 | 2019-02-19 | 工业和信息化部电子第五研究所 | 多层铜互连布线结构的检测方法 |
CN108037431B (zh) * | 2017-11-16 | 2020-02-14 | 长江存储科技有限责任公司 | 一种用于标定3d nand产品位线短接缺陷的方法 |
CN107993951B (zh) * | 2017-11-21 | 2020-09-25 | 长江存储科技有限责任公司 | 用于快速定位三维存储器阵列区短路的方法 |
CN109406555B (zh) * | 2018-10-15 | 2021-12-07 | 上海华力微电子有限公司 | 一种样品去层次方法 |
CN109490758B (zh) * | 2018-12-12 | 2020-12-15 | 上海华力集成电路制造有限公司 | 一种短路失效的定位方法 |
CN109817538B (zh) * | 2019-01-22 | 2021-09-17 | 上海华虹宏力半导体制造有限公司 | Sram失效在线测试方法 |
CN110706728B (zh) * | 2019-09-29 | 2021-08-31 | 长江存储科技有限责任公司 | 芯片存储区域失效地址物理位置的确认方法及装置 |
CN111477262B (zh) * | 2020-04-07 | 2022-05-31 | 武汉新芯集成电路制造有限公司 | 半导体器件的失效分析方法 |
TWI738568B (zh) * | 2020-11-18 | 2021-09-01 | 汎銓科技股份有限公司 | 一種故障分析用的半導體試片的製備方法 |
CN113009364A (zh) * | 2021-01-29 | 2021-06-22 | 天津市捷威动力工业有限公司 | 一种测失效电池交流阻抗方法 |
CN113539875A (zh) * | 2021-07-16 | 2021-10-22 | 日月光半导体(昆山)有限公司 | 检测集成电路装置的方法 |
CN115586415A (zh) * | 2022-12-13 | 2023-01-10 | 合肥新晶集成电路有限公司 | 半导体结构的失效分析方法 |
Citations (3)
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CN1484291A (zh) * | 2002-09-18 | 2004-03-24 | 南亚科技股份有限公司 | 检测半导体元件中位元线偏移的测试元件及测试方法 |
CN1805139A (zh) * | 2004-12-07 | 2006-07-19 | 三星电子株式会社 | 半导体器件中失效分析的结构和方法 |
CN101494089A (zh) * | 2008-01-24 | 2009-07-29 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件主位线失效的检测方法和检测系统 |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1484291A (zh) * | 2002-09-18 | 2004-03-24 | 南亚科技股份有限公司 | 检测半导体元件中位元线偏移的测试元件及测试方法 |
CN1805139A (zh) * | 2004-12-07 | 2006-07-19 | 三星电子株式会社 | 半导体器件中失效分析的结构和方法 |
CN101494089A (zh) * | 2008-01-24 | 2009-07-29 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件主位线失效的检测方法和检测系统 |
Non-Patent Citations (2)
Title |
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时序逻辑电路失效分析;龚欣等;《半导体技术》;20091231;第34卷(第10期);974-977 * |
龚欣等.时序逻辑电路失效分析.《半导体技术》.2009,第34卷(第10期), |
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Address after: No. 18 Gaoxin Fourth Road, Donghu Technological Development Zone, Wuhan City, Hubei Province, 430205 Patentee after: Wuhan Xinxin Integrated Circuit Co.,Ltd. Country or region after: China Patentee after: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) Corp. Address before: No. 18 Gaoxin Fourth Road, Donghu Technological Development Zone, Wuhan City, Hubei Province, 430205 Patentee before: Wuhan Xinxin Semiconductor Manufacturing Co.,Ltd. Country or region before: China Patentee before: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) Corp. |