CN102246324B - 深沟槽背接触光伏太阳能电池 - Google Patents

深沟槽背接触光伏太阳能电池 Download PDF

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Publication number
CN102246324B
CN102246324B CN200980149558.3A CN200980149558A CN102246324B CN 102246324 B CN102246324 B CN 102246324B CN 200980149558 A CN200980149558 A CN 200980149558A CN 102246324 B CN102246324 B CN 102246324B
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doped region
passivation layer
wafer
back side
solar cells
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CN102246324A (zh
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胡马云·阿克特·穆戈尔
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SILICON CPV PLC
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/40—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising photovoltaic cells in a mechanically stacked configuration
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/148—Shapes of potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/93—Interconnections
    • H10F77/933—Interconnections for devices having potential barriers
    • H10F77/935—Interconnections for devices having potential barriers for photovoltaic devices or modules
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Manufacturing & Machinery (AREA)
CN200980149558.3A 2008-11-12 2009-11-12 深沟槽背接触光伏太阳能电池 Active CN102246324B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB0820684.9 2008-11-12
GBGB0820684.9A GB0820684D0 (en) 2008-11-12 2008-11-12 Photovoltaic solar cells
PCT/GB2009/051528 WO2010055346A2 (en) 2008-11-12 2009-11-12 Photovoltaic solar cells

Publications (2)

Publication Number Publication Date
CN102246324A CN102246324A (zh) 2011-11-16
CN102246324B true CN102246324B (zh) 2015-07-29

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US (1) US8889462B2 (enExample)
EP (1) EP2356687B1 (enExample)
JP (1) JP5503668B2 (enExample)
KR (1) KR101561682B1 (enExample)
CN (1) CN102246324B (enExample)
GB (2) GB0820684D0 (enExample)
WO (1) WO2010055346A2 (enExample)

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CN102569492B (zh) * 2010-12-17 2014-11-05 上海凯世通半导体有限公司 太阳能晶片的掺杂方法以及掺杂晶片
CN102569491B (zh) * 2010-12-17 2014-07-23 上海凯世通半导体有限公司 太阳能晶片的掺杂方法以及掺杂晶片
CN102637766B (zh) * 2011-02-15 2014-04-30 上海凯世通半导体有限公司 太阳能晶片掺杂方法、掺杂晶片、太阳能电池及制作方法
CN102637767B (zh) * 2011-02-15 2015-03-18 上海凯世通半导体有限公司 太阳能电池的制作方法以及太阳能电池
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CN103325666A (zh) * 2012-03-21 2013-09-25 苏州贝克微电子有限公司 半导体晶圆掺杂扩散技术
CN102623564B (zh) * 2012-03-30 2015-01-07 中山大学 一种具有激光开槽正面电极的晶体硅太阳电池的制作方法
CN102738288A (zh) * 2012-06-20 2012-10-17 常州天合光能有限公司 非晶硅钝化n型背接触电池及其制备方法
CN102832270A (zh) * 2012-08-16 2012-12-19 友达光电股份有限公司 太阳能电池及其制作方法
CN102856328B (zh) * 2012-10-10 2015-06-10 友达光电股份有限公司 太阳能电池及其制作方法
CN102881737A (zh) * 2012-10-15 2013-01-16 浙江正泰太阳能科技有限公司 体结背接触太阳能电池
CN102903775B (zh) * 2012-10-24 2014-10-22 中国科学院半导体研究所 用于聚光和激光输能的晶体硅太阳能电池结构及其制作方法
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TW201442261A (zh) * 2013-04-30 2014-11-01 Terasolar Energy Materials Corp 矽晶太陽能電池的製造方法以及矽晶太陽能電池
CN103794679B (zh) * 2014-01-26 2016-07-06 晶澳（扬州）太阳能科技有限公司 一种背接触太阳能电池的制备方法
US20160284917A1 (en) * 2015-03-27 2016-09-29 Seung Bum Rim Passivation Layer for Solar Cells
JP6203990B1 (ja) 2016-02-26 2017-09-27 京セラ株式会社 太陽電池素子
TWI668876B (zh) * 2017-08-29 2019-08-11 柯作同 太陽能電池及其製造方法
WO2019102073A1 (en) * 2017-11-24 2019-05-31 Aalto-Korkeakoulusäätiö Sr Photovoltaic semiconductor structure
US11978815B2 (en) 2018-12-27 2024-05-07 Solarpaint Ltd. Flexible photovoltaic cell, and methods and systems of producing it
US11081606B2 (en) * 2018-12-27 2021-08-03 Solarpaint Ltd. Flexible and rollable photovoltaic cell having enhanced properties of mechanical impact absorption
EP4226427A4 (en) * 2020-10-07 2024-11-06 Solarpaint Ltd. FLEXIBLE SOLAR PANELS AND PHOTOVOLTAIC DEVICES AND METHODS AND SYSTEMS FOR THE PRODUCTION THEREOF
CN114695594B (zh) * 2020-12-30 2024-11-15 苏州阿特斯阳光电力科技有限公司 背接触电池的制备方法及背接触电池
CN113299772B (zh) * 2021-06-04 2025-10-03 浙江爱旭太阳能科技有限公司 一种选择性接触区域掩埋型太阳能电池及其背面接触结构
CN113964222B (zh) * 2021-10-15 2023-11-10 浙江大学 一种低漏电的晶体硅太阳能电池片、电池组件及制备方法
CN113964223B (zh) * 2021-10-15 2023-11-10 浙江大学 一种抑制切割边缘漏电的晶体硅太阳能电池片、电池组件及制备方法
CN115000214B (zh) * 2022-06-23 2024-03-29 浙江爱旭太阳能科技有限公司 一种p型太阳能电池及其制作方法、电池组件和光伏系统
CN115084299B (zh) * 2022-06-23 2024-10-01 广东爱旭科技有限公司 一种p型太阳能电池及其制作方法、电池组件和光伏系统
CN115000247B (zh) * 2022-07-29 2022-11-04 中国华能集团清洁能源技术研究院有限公司 内部钝化的背接触perc电池片的制作方法
CN118943223A (zh) * 2024-07-24 2024-11-12 浙江爱旭太阳能科技有限公司 一种太阳能电池、电池组件及光伏系统

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Also Published As

Publication number Publication date
EP2356687B1 (en) 2016-10-12
US20110214721A1 (en) 2011-09-08
WO2010055346A2 (en) 2010-05-20
GB2466342B (en) 2013-07-17
KR101561682B1 (ko) 2015-10-20
WO2010055346A3 (en) 2011-03-31
US8889462B2 (en) 2014-11-18
EP2356687A2 (en) 2011-08-17
KR20110097827A (ko) 2011-08-31
JP5503668B2 (ja) 2014-05-28
JP2012508473A (ja) 2012-04-05
GB2466342A (en) 2010-06-23
GB0820684D0 (en) 2008-12-17
GB0919795D0 (en) 2009-12-30
CN102246324A (zh) 2011-11-16

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