KR101561682B1 - 깊은 홈 후측 콘택 광발전 태양 전지들 - Google Patents

깊은 홈 후측 콘택 광발전 태양 전지들 Download PDF

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KR101561682B1
KR101561682B1 KR1020117013407A KR20117013407A KR101561682B1 KR 101561682 B1 KR101561682 B1 KR 101561682B1 KR 1020117013407 A KR1020117013407 A KR 1020117013407A KR 20117013407 A KR20117013407 A KR 20117013407A KR 101561682 B1 KR101561682 B1 KR 101561682B1
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doped region
wafer
passivation layer
doped
rear surface
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KR20110097827A (ko
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후메이윤 액터 무갈
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실리콘 씨피브이 피엘씨
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/40—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising photovoltaic cells in a mechanically stacked configuration
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/148—Shapes of potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/93—Interconnections
    • H10F77/933—Interconnections for devices having potential barriers
    • H10F77/935—Interconnections for devices having potential barriers for photovoltaic devices or modules
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Manufacturing & Machinery (AREA)
KR1020117013407A 2008-11-12 2009-11-12 깊은 홈 후측 콘택 광발전 태양 전지들 Active KR101561682B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB0820684.9A GB0820684D0 (en) 2008-11-12 2008-11-12 Photovoltaic solar cells
GB0820684.9 2008-11-12

Publications (2)

Publication Number Publication Date
KR20110097827A KR20110097827A (ko) 2011-08-31
KR101561682B1 true KR101561682B1 (ko) 2015-10-20

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Country Status (7)

Country Link
US (1) US8889462B2 (enExample)
EP (1) EP2356687B1 (enExample)
JP (1) JP5503668B2 (enExample)
KR (1) KR101561682B1 (enExample)
CN (1) CN102246324B (enExample)
GB (2) GB0820684D0 (enExample)
WO (1) WO2010055346A2 (enExample)

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US20110195542A1 (en) * 2010-02-05 2011-08-11 E-Chem Enterprise Corp. Method of providing solar cell electrode by electroless plating and an activator used therein
JP2011210802A (ja) * 2010-03-29 2011-10-20 Napura:Kk 太陽電池
CN102569491B (zh) * 2010-12-17 2014-07-23 上海凯世通半导体有限公司 太阳能晶片的掺杂方法以及掺杂晶片
CN102637766B (zh) * 2011-02-15 2014-04-30 上海凯世通半导体有限公司 太阳能晶片掺杂方法、掺杂晶片、太阳能电池及制作方法
CN102569492B (zh) * 2010-12-17 2014-11-05 上海凯世通半导体有限公司 太阳能晶片的掺杂方法以及掺杂晶片
CN102637767B (zh) * 2011-02-15 2015-03-18 上海凯世通半导体有限公司 太阳能电池的制作方法以及太阳能电池
US9559228B2 (en) * 2011-09-30 2017-01-31 Sunpower Corporation Solar cell with doped groove regions separated by ridges
US9269851B2 (en) * 2011-11-15 2016-02-23 Newsouth Innovations Pty Limited Metal contact scheme for solar cells
US20140345685A1 (en) * 2011-12-13 2014-11-27 Dow Corning Corporation Photovoltaic Cell And Method Of Forming The Same
TWI470816B (zh) * 2011-12-28 2015-01-21 Au Optronics Corp 太陽能電池
CN103208557A (zh) * 2012-01-13 2013-07-17 上海凯世通半导体有限公司 太阳能电池的制作方法及太阳能电池
CN103325666A (zh) * 2012-03-21 2013-09-25 苏州贝克微电子有限公司 半导体晶圆掺杂扩散技术
CN102623564B (zh) * 2012-03-30 2015-01-07 中山大学 一种具有激光开槽正面电极的晶体硅太阳电池的制作方法
CN102738288A (zh) * 2012-06-20 2012-10-17 常州天合光能有限公司 非晶硅钝化n型背接触电池及其制备方法
CN102832270A (zh) * 2012-08-16 2012-12-19 友达光电股份有限公司 太阳能电池及其制作方法
CN102856328B (zh) * 2012-10-10 2015-06-10 友达光电股份有限公司 太阳能电池及其制作方法
CN102881737A (zh) * 2012-10-15 2013-01-16 浙江正泰太阳能科技有限公司 体结背接触太阳能电池
CN102903775B (zh) * 2012-10-24 2014-10-22 中国科学院半导体研究所 用于聚光和激光输能的晶体硅太阳能电池结构及其制作方法
WO2014137284A1 (en) * 2013-03-05 2014-09-12 Trina Solar Energy Development Pte Ltd Method of fabricating a solar cell
TW201442261A (zh) * 2013-04-30 2014-11-01 Terasolar Energy Materials Corp 矽晶太陽能電池的製造方法以及矽晶太陽能電池
CN103794679B (zh) * 2014-01-26 2016-07-06 晶澳（扬州）太阳能科技有限公司 一种背接触太阳能电池的制备方法
US20160284917A1 (en) * 2015-03-27 2016-09-29 Seung Bum Rim Passivation Layer for Solar Cells
WO2017146214A1 (ja) * 2016-02-26 2017-08-31 京セラ株式会社 太陽電池素子
TWI668876B (zh) * 2017-08-29 2019-08-11 柯作同 太陽能電池及其製造方法
WO2019102073A1 (en) * 2017-11-24 2019-05-31 Aalto-Korkeakoulusäätiö Sr Photovoltaic semiconductor structure
US11081606B2 (en) * 2018-12-27 2021-08-03 Solarpaint Ltd. Flexible and rollable photovoltaic cell having enhanced properties of mechanical impact absorption
US11978815B2 (en) 2018-12-27 2024-05-07 Solarpaint Ltd. Flexible photovoltaic cell, and methods and systems of producing it
EP4226427A4 (en) * 2020-10-07 2024-11-06 Solarpaint Ltd. FLEXIBLE SOLAR PANELS AND PHOTOVOLTAIC DEVICES AND METHODS AND SYSTEMS FOR THE PRODUCTION THEREOF
CN114695594B (zh) * 2020-12-30 2024-11-15 苏州阿特斯阳光电力科技有限公司 背接触电池的制备方法及背接触电池
CN121078843A (zh) * 2021-06-04 2025-12-05 浙江爱旭太阳能科技有限公司 一种选择性接触区域掩埋型太阳能电池及其背面接触结构
CN113964222B (zh) * 2021-10-15 2023-11-10 浙江大学 一种低漏电的晶体硅太阳能电池片、电池组件及制备方法
CN113964223B (zh) * 2021-10-15 2023-11-10 浙江大学 一种抑制切割边缘漏电的晶体硅太阳能电池片、电池组件及制备方法
CN115084299B (zh) * 2022-06-23 2024-10-01 广东爱旭科技有限公司 一种p型太阳能电池及其制作方法、电池组件和光伏系统
CN115000214B (zh) * 2022-06-23 2024-03-29 浙江爱旭太阳能科技有限公司 一种p型太阳能电池及其制作方法、电池组件和光伏系统
CN115000247B (zh) * 2022-07-29 2022-11-04 中国华能集团清洁能源技术研究院有限公司 内部钝化的背接触perc电池片的制作方法
CN118943223A (zh) * 2024-07-24 2024-11-12 浙江爱旭太阳能科技有限公司 一种太阳能电池、电池组件及光伏系统

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Publication number Publication date
GB2466342A (en) 2010-06-23
US20110214721A1 (en) 2011-09-08
EP2356687B1 (en) 2016-10-12
KR20110097827A (ko) 2011-08-31
GB2466342B (en) 2013-07-17
CN102246324B (zh) 2015-07-29
GB0919795D0 (en) 2009-12-30
JP2012508473A (ja) 2012-04-05
JP5503668B2 (ja) 2014-05-28
CN102246324A (zh) 2011-11-16
WO2010055346A2 (en) 2010-05-20
EP2356687A2 (en) 2011-08-17
GB0820684D0 (en) 2008-12-17
US8889462B2 (en) 2014-11-18
WO2010055346A3 (en) 2011-03-31

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