CN102236210B - 液晶显示器及其制造方法 - Google Patents

液晶显示器及其制造方法 Download PDF

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CN102236210B
CN102236210B CN201110100596.9A CN201110100596A CN102236210B CN 102236210 B CN102236210 B CN 102236210B CN 201110100596 A CN201110100596 A CN 201110100596A CN 102236210 B CN102236210 B CN 102236210B
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liquid crystal
substrate
crystal display
initiating agent
electrode
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CN102236210A (zh
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吴浩吉
金寿桢
禹秀僩
柳在镇
金慜熙
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TCL China Star Optoelectronics Technology Co Ltd
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Samsung Display Co Ltd
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Abstract

本发明提供了一种液晶显示器和一种用于制造液晶显示器的方法,所述液晶显示器包括:第一基底;面对所述第一基底的第二基底;场产生电极,设置在所述第一基底和所述第二基底中的至少一个上;取向层,设置在所述场产生电极上;液晶层,设置在所述第一基底和所述第二基底之间,并包括液晶和取向聚合物。所述取向层最初包含含有引发剂的取向材料,所述取向聚合物最初包含取向助剂。

Description

液晶显示器及其制造方法
技术领域
本发明的示例性实施例涉及一种液晶显示器及其制造方法。
背景技术
液晶显示器被广泛地用作一种平板显示器。液晶显示器通常具有两个显示面板,在这两个显示面板上形成有场产生电极,例如像素电极和共电极,液晶层设置在这两个面板之间。
在液晶显示器(LCD)中,电压施加到场产生电极,从而产生穿过液晶层的电场,并且液晶层的液晶分子的取向可以由该电场来确定。因此,入射光的偏振可以通过穿过液晶层来控制,由此显示图像。
在这些LCD中,已经开发出在没有施加电场时使得液晶分子的主轴垂直于显示面板取向的垂直取向模式LCD。
另外,已经开发出一种在不存在电场的情况下向液晶分子提供预倾斜的方法,从而提高了液晶层的响应速度,同时实现了垂直取向(VA)模式LCD的宽视角。
在该背景部分中公开的信息是为了加深对本发明的背景的理解,并且可能包含不是现有技术的一部分的信息。
发明内容
本发明的示例性实施例提供了一种可通过减小余像的影响来提高显示图像的可靠性的液晶显示器和一种用于该液晶显示器的制造方法。
本发明的示例性实施例还提供了一种具有含有引发剂的取向层的液晶显示器,所述液晶显示器具有反应性液晶元的改善的硬化速度。
本发明的示例性实施例还提供了一种通过减少的工艺时间制造的且具有减少的余像的液晶显示器,由此改善了液晶显示器的可靠性。
本发明的附加特征将在下面的说明书中进行说明,并部分地根据说明书将是明显的,或者可以由本发明的实施而明了。
本发明的示例性实施例公开了一种液晶显示器,所述液晶显示器包括:第一基底;面对所述第一基底的第二基底;场产生电极,设置在所述第一基底和所述第二基底中的至少一个上;取向层,设置在所述场产生电极上;液晶层,设置在所述第一基底和所述第二基底之间,并包括液晶和取向聚合物。所述取向层最初包含含有引发剂的取向材料,所述取向聚合物最初包含取向助剂。
本发明的示例性实施例还公开了一种用于制造液晶显示器的方法,所述方法包括:在第一基底和面对所述第一基底的第二基底中的至少一个上形成场产生电极;在所述场产生电极上形成含有引发剂的取向层;在所述第一基底和所述第二基底之间设置包括液晶和取向助剂的液晶层;向所述第一基底施加第一电压,并向所述第二基底施加第二电压,所述第一电压和所述第二电压彼此不同;向所述取向层和所述液晶层照射光,以形成取向聚合物。
应当理解的是,上面概括性描述和下面详细描述是示例性的和说明性的,并且旨在提供如权利要求书所述的本发明的进一步解释。
附图说明
附图示出了本发明的实施例,并与描述一起用于解释本发明的原理,包括附图是为了进一步理解本发明,将附图并入到本说明书中,且附图构成本说明书的一部分。
图1和图2示出根据本发明示例性实施例的通过取向助剂形成液晶的预倾斜的方法。
图3是示出根据本发明示例性实施例的与照射到液晶显示器的光的量对应的反应性液晶元(reactivemesogen)减少的相对量的曲线图。
图4是示出根据本发明示例性实施例的与液晶显示器的引发剂和光照射的量对应的反应性液晶元减少的量的曲线图。
图5是示出根据本发明示例性实施例的与在液晶显示器中加入的引发剂的量对应的反应性液晶元的剩余量的曲线图。
图6是示出根据本发明示例性实施例的热失重与液晶显示器中的引发剂的关系曲线图。
图7是根据本发明示例性实施例的液晶显示器的布局图。
图8是沿图7的III-III’线截取的剖视图。
图9是根据本发明示例性实施例的像素电极的平面图。
图10是根据本发明示例性实施例的液晶显示器的电极的平面图。
具体实施方式
在下文中将参照附图更充分地描述本发明,在附图中示出了本发明的实施例。然而,本发明可以以多种不同的形式来实施,不应该被理解为局限于在此提出的实施例。而是提供这些实施例使本公开是彻底的,并将把本发明的范围充分地传达给本领域技术人员。在附图中,为了清晰起见,会夸大层和区域的尺寸和相对尺寸。附图中相同的标号表示相同的元件。
应当理解,当元件或层被称作“在”另一元件或层“上”,“连接到”或“结合到”另一元件或层时,该元件或层可以直接在另一元件或层上、直接连接到或直接结合到另一元件或层,或者可以存在中间元件或中间层。相反,当元件被称作“直接在”另一元件或层“上”、“直接连接到”或“直接结合到”另一元件或层时,不存在中间元件或中间层。
图1和图2示出根据本发明示例性实施例的通过取向助剂形成液晶的预倾斜的方法。
参照图1,包括取向助剂50和液晶分子310的液晶层位于像素电极191和共电极270之间。
可通过涂覆取向材料形成的取向层11和21分别位于像素电极191和共电极270上。根据本发明示例性实施例的取向层11和21包含引发剂。取向层11和21可以由诸如聚酰胺酸、聚硅氧烷或聚酰亚胺的材料形成。
当没有施加电压时,液晶分子310沿与像素电极191和共电极270垂直的方向布置。这里,像素电极191和共电极270施加有电压。
通过施加电压,液晶分子310和取向助剂50沿与像素电极191的下面描述的小分支的长度方向平行的方向倾斜。
当向像素电极191和共电极270施加电压从而在像素电极191和共电极270之间产生电场时,照射光1。光1可以具有能够使取向助剂50聚合的波长,例如紫外波长。像素电极191和共电极270可被称为场产生电极。虽然像素电极191和共电极270分别形成在下基底和上基底上,但是可以仅在一个基底上形成场产生电极。
在通过照射光1使取向助剂50聚合的工艺中,在取向层11和21中含有的引发剂加速取向助剂50的聚合。
根据本发明示例性实施例的引发剂混合在取向层11和21中,并形成在像素电极191和共电极270上,由此有助于取向助剂50在取向层11和21的表面上的聚合。
如果在取向层11和21中含有引发剂,则取向助剂50的聚合主要在取向层11和21的表面上发生,从而在取向助剂50的聚合之后,引发剂不会保留在液晶层中。该方法可以通过减小余像的影响来提高显示可靠性。
另外,包含在取向层11和21中的引发剂可以用于取向助剂50的光聚合加速,并且可以减少引发剂含量,使得在光照射后在取向层11和21内部检测到少量的引发剂。
现在,描述根据本发明示例性实施例的在液晶显示器中使用的引发剂和液晶显示器的制造方法。下面,可将取向助剂50表示为反应性液晶元(RM)。
图3是示出根据本发明示例性实施例的与照射到液晶显示器的光的量对应的反应性液晶元减少的相对量的曲线图。
下面示出的表1列出了反应性液晶元的减少量。
对比示例对应于不包括引发剂,示例性实施例1包括含有式1表示的化合物的引发剂。示例性实施例2包括含有式2表示的化合物的引发剂。
式1
式2
参照图3和表1,在对比示例中,当光照射大于30J时,反应性液晶元几乎被完全消耗。在示例性实施例1中,当光照射大于20J时,反应性液晶元几乎被完全消耗。在示例性实施例2中,当光照射大于10J时,反应性液晶元几乎被完全消耗。
因此,如在示例性实施例1和示例性实施例2中,当将引发剂加入到取向层中且光能量大于10J时,可以极大地减少剩余的反应性液晶元的含量。当光照射大于20J时,可以将反应性液晶元含量减小至小于可检测到的限度。
[表1]
根据本发明示例性实施例的引发剂可以含有由下面的式3、式4、式5、式6、式7、式8、式9、式10、式11和式12表示的化合物。
式3
式4
式5
式6
式7
式8
式9
式10
式11
式12
图4是示出根据本发明示例性实施例的与液晶显示器的引发剂和光照射的量对应的反应性液晶元减少的量的曲线图。
下面示出的表2列出了根据引发剂含量和光照射量的反应性液晶元的减少。
对比示例对应于不包括引发剂,示例性实施例1包括由式1表示的引发剂。示例性实施例2包括由式2表示的引发剂。数据针对于示例性实施例1的0.2wt%的引发剂含量以及示例性实施例2的0.1wt%和0.2wt%的引发剂含量。
参照图4和表2,在对比示例中,当光照射量大于50J时,反应性液晶元几乎被完全消耗。在与0.2wt%引发剂对应的示例性实施例1中,当光照射量为30J时,反应性液晶元几乎被完全消耗。对于示例性实施例2,研究了与0.1wt%和0.2wt%的引发剂含量对应的两种浓度的引发剂。
对于具有0.1wt%引发剂的示例性实施例2,当光照射量为40J时,反应性液晶元几乎被完全消耗。在具有0.2wt%引发剂的示例性实施例2中,当光照射量为30J时,反应性液晶元几乎被完全消耗。
在0.1wt%引发剂的情况下,与不包括引发剂时相比,反应性液晶元的消耗速率快,在0.2wt%的引发剂的情况下,消耗速率更大。
[表2]
图5是示出根据本发明示例性实施例的与在液晶显示器中加入的引发剂的量对应的反应性液晶元(RM)的剩余量的曲线图。
参照图5,将反应性液晶元的剩余量的结果示为与在取向层中加入的引发剂的量相关联。当引发剂的量从0.1wt%增加至0.2wt%时,反应性液晶元的剩余量显著地减少。当引发剂增加至0.5wt%时,剩余的反应性液晶元具有几乎不能检测到的特征,即,剩余量几乎处于检测限处或处于背景噪声内。因此,根据本发明示例性实施例的引发剂含量优选地为0.2wt%至0.5wt%的范围。
表3和表4示出在光照射之后由电子探针显微分析仪(EPMA)确定的取向层中的剩余成分的元素组成的实验数据。实验样品中的引发剂是由式2表示的化合物,并且在取向层中未检测到作为分析物的磷(P)。数据显示出,在引发剂用于加速反应性液晶元的聚合之后引发剂含量减少,并且在光照射后在取向层中几乎不能检测到引发剂含量。结果,引发剂在取向层中作为杂质残留的可能性小。
表3(加入0.1wt%引发剂)
wt(%) 摩尔(%) 元素
47.150 65.628 C
23.315 24.363 O
13.998 2.038 In
7.010 4.173 Si
3.041 1.884 Al
2.459 0.429 Mo
2.137 1.114 S
0.890 0.371 Ca
表4(加入0.2wt%引发剂)
wt(%) 摩尔(%) 元素
49.590 68.482 C
20.455 21.207 O
13.637 1.970 In
7.453 4.402 Si
3.266 2.007 Al
2.527 0.437 Mo
2.165 1.120 S
0.907 0.376 Ca
图6是示出根据本发明示例性实施例的热失重与液晶显示器中的引发剂的关系曲线图。
参照图6,引发剂1为Darocur1173(CIBA公司);引发剂2为Irgacure184;引发剂3为Irgacure500;引发剂4为Irgacure2959;引发剂5为DarocurMBF;引发剂6为Irgacure754。
使用热重分析仪测量引发剂的热失重的结果显示出引发剂6在各种温度下具有最低的热失重。因此,当需要高温工艺时,可以将引发剂6加入到取向层。
接下来,参照图1、图2、图7、图8、图9和图10描述根据本发明示例性实施例的液晶显示器和该液晶显示器的制造方法。
图7是根据本发明示例性实施例的液晶显示器的布局图,图8是沿图7的III-III’线截取的剖视图。图9是根据本发明示例性实施例的像素电极的平面图,图10是根据本发明示例性实施例的液晶显示器的电极的平面图。
参照图7和图8,示出了薄膜晶体管阵列面板100和共电极面板200。
下面板100的制造方法如下。
在基底110上顺序地沉积多个薄膜,并将所述多个薄膜图案化,以形成包括栅电极124a和124b(标号124包括标号124a和124b)的栅极线121、栅极绝缘层140、半导体154a和154b、包括源电极173a和173b的数据线171a和171b、漏电极175a和175b以及下钝化层180p。存储电极线131、135可以与栅极线121形成在同一层上。存储电极线131、135包括与栅极线121基本平行延伸的主干线131和远离主干线131延伸的存储电极135。
可以分别在半导体154b和源电极173b之间以及在半导体154b和漏电极175b之间设置欧姆接触层163b和165b。接下来,在下钝化层180p上形成滤色器230,在滤色器230上形成用于防止漏光的光阻挡构件220。在光阻挡构件220和滤色器230上形成上钝化层180q。可选地,滤色器230和光阻挡构件220中的一个形成在下面板中。
在上钝化层180q上沉积诸如氧化铟锡(ITO)或氧化铟锌(IZO)的导电层,并将导电层图案化,如图9和图10所示,以形成包括纵向部分192、横向部分193以及从纵向部分192和横向部分193延伸的多个小分支194a、194b、194c和194d的像素电极191。像素电极191通过通孔185a和185b分别连接到漏电极175a和175b。接下来,在像素电极191上涂覆含有引发剂的取向材料,以形成取向层11。
现在将参照图9和图10详细描述基本电极199。
例如,如图10所示,基本电极199可以是总体上四边形的,并包括具有彼此垂直延伸的横向主干193和纵向主干192的十字形主干部分。此外,基本电极199通过横向主干193和纵向主干192被分为第一至第四子区域Da、Db、Dc和Dd,子区域Da具有多个第一小分支194a,子区域Db具有多个第二小分支194b,子区域Dc具有多个第三小分支194c,子区域Dd具有多个第四小分支194d。
第一小分支194a在倾斜的同时从水平主干193或垂直主干192向左上方延伸,第二小分支194b以倾斜的方式从横向主干193或纵向主干192向右上方延伸。第三小分支194c以倾斜的方式从水平主干193或垂直主干192向左下方延伸,第四小分支194d以倾斜的方式从横向主干193或纵向主干192向右下方延伸。
第一小分支194a至第四小分支194d与栅极线121或横向主干193成例如大约45度或大约135度的角度。此外,子区域Da至Dd中的两个相邻子区域的小分支194a至194d可以彼此垂直延伸。
另外,当靠近横向主干193或纵向主干192时,小分支194a至194d的宽度会放大。
再参照图7至图10,第一子像素电极191a和第二子像素电极191b均包括一个基本电极199。然而,整个像素电极191中的第二子像素电极191b的面积可以大于第一子像素191a的面积,并且在这种情况下,第二子像素电极191b在基本电极199的尺寸方面不同,使得第二子像素电极191b的面积大于第一子像素电极191a的面积,例如为第一子像素电极191a的面积的大约1.0倍至大约2.2倍。
第二子像素电极191b包括根据数据线171延伸的一对分支195。分支195设置在第一子像素电极191a和数据线171a之间,以及设置在第一子像素电极191a和数据线171b之间,并连接到第二子像素电极191b的基本电极199的底部。第一子像素电极191a和第二子像素电极191b通过接触孔185a和185b物理地电连接到第一漏电极175a和第二漏电极175b,从而接收来自第一漏电极175a和第二漏电极175b的数据电压。
如下制造上面板200。
在基底210上形成共电极270。然后,在共电极270上涂覆含有引发剂的取向材料,以形成取向层21。
接下来,装配通过上述方法制造的下面板100和上面板200,并通过在下面板100和上面板200之间注入液晶分子310和取向助剂的混合物来形成液晶层3。
可选地,可以通过将液晶分子310和取向助剂的混合物滴在下面板100或上面板200上的方法来形成液晶层3。
接下来,参照图1和图2,像素电极191和共电极270施加有电压。
由于施加电压,液晶分子310和取向助剂50沿与像素电极191的小分支194a、194b、194c和194d的长度方向平行的方向倾斜。
当像素电极191和共电极270施加有电压时,照射光1。光1具有可使取向助剂50聚合的波长,例如紫外波长。
参照图8,在光照射之后,使在与取向层21相邻的位置聚集的取向助剂50光聚合,由此形成取向聚合物50a。
这里,根据本发明示例性实施例的引发剂是混合在取向层21中的材料,引发剂加速靠近取向层21的表面的取向助剂50的聚合。
取向聚合物50a根据液晶的取向来布置,在去除施加的电压后,保持该布置,由此控制液晶分子310的预倾斜。
可以在上面板200和下面板100之间形成用于保持上面板200和下面板100之间的间隔的分隔件363。
如上所述,根据本发明示例性实施例,取向层含有引发剂,从而可以提高反应性液晶元的硬化速率,并可以减少反应性液晶元的处理时间,并且可以通过微小的光照射量获得少量的剩余液晶元量,从而可以使对有机层的损坏最小化。
对于本领域技术人员将明显的是,在不脱离本发明的精神或范围的情况下,可以在本发明中做出各种修改和改变。因此,如果本发明的修改和改变落在权利要求书及其等价物的范围内,则本发明旨在覆盖这些修改和改变。

Claims (10)

1.一种液晶显示器,所述液晶显示器包括:
第一基底;
面对所述第一基底的第二基底;
场产生电极,设置在所述第一基底和所述第二基底中的至少一个上;
取向层,设置在所述场产生电极上;
液晶层,设置在所述第一基底和所述第二基底之间,并包括液晶和取向聚合物,
其中,所述取向层最初包含含有引发剂的取向材料,所述取向聚合物最初包含取向助剂,所述引发剂用于使所述取向助剂聚合,以加速所述取向聚合物的形成。
2.如权利要求1所述的液晶显示器,其中,所述引发剂包含由下面的式1、式2、式3和式4表示的化合物中的至少一个成员:
3.如权利要求2所述的液晶显示器,其中,基于所述取向材料和所述引发剂的总量,所述取向材料中的所述引发剂的重量范围为0.2%至0.5%。
4.如权利要求3所述的液晶显示器,其中,所述取向材料包括聚酰胺酸、聚酰亚胺和聚硅氧烷中的至少一种。
5.如权利要求1所述的液晶显示器,其中,所述第一基底包括薄膜晶体管阵列面板,所述第二基底包括共电极面板,滤色器和黑矩阵中的至少一个设置在所述薄膜晶体管阵列面板上。
6.如权利要求5所述的液晶显示器,其中,所述场产生电极包括多个小分支。
7.如权利要求6所述的液晶显示器,所述液晶显示器还包括:
栅极线,设置在所述第一基底上;
第一数据线,设置在所述第一基底上;
第二数据线,设置在所述第一基底上;
第一薄膜晶体管,连接到所述栅极线和所述第一数据线;
第二薄膜晶体管,连接到所述栅极线和所述第二数据线,
其中,所述场产生电极还包括连接到所述第一薄膜晶体管的第一子像素电极和连接到所述第二薄膜晶体管的第二子像素电极。
8.一种用于制造液晶显示器的方法,所述方法包括:
在第一基底和面对所述第一基底的第二基底中的至少一个上形成场产生电极;
在所述场产生电极上形成含有引发剂的取向层;
在所述第一基底和所述第二基底之间设置包括液晶和取向助剂的液晶层;
向所述第一基底施加第一电压,并向所述第二基底施加第二电压,所述第一电压和所述第二电压彼此不同;
向所述取向层和所述液晶层照射光,以形成取向聚合物,
其中,所述引发剂用于使所述取向助剂聚合,以加速所述取向聚合物的形成。
9.如权利要求8所述的方法,其中,所述引发剂包含由下面的式1、式2、式3和式4表示的化合物中的至少一个成员:
10.根据权利要求9所述的方法,其中,基于所述取向材料和所述引发剂的总量,所述引发剂的重量范围为0.2%至0.5%。
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