CN102214561A - 超级结半导体器件及其制造方法 - Google Patents
超级结半导体器件及其制造方法 Download PDFInfo
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- CN102214561A CN102214561A CN2010101410645A CN201010141064A CN102214561A CN 102214561 A CN102214561 A CN 102214561A CN 2010101410645 A CN2010101410645 A CN 2010101410645A CN 201010141064 A CN201010141064 A CN 201010141064A CN 102214561 A CN102214561 A CN 102214561A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 120
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 89
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 89
- 239000010703 silicon Substances 0.000 claims abstract description 89
- 238000000034 method Methods 0.000 claims abstract description 43
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 31
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 31
- 238000009792 diffusion process Methods 0.000 claims abstract description 8
- 238000005530 etching Methods 0.000 claims abstract description 8
- 238000001259 photo etching Methods 0.000 claims abstract description 7
- 238000005516 engineering process Methods 0.000 claims description 21
- 238000000407 epitaxy Methods 0.000 claims description 18
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 13
- 229920005591 polysilicon Polymers 0.000 claims description 13
- 239000011248 coating agent Substances 0.000 claims description 10
- 238000000576 coating method Methods 0.000 claims description 10
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 10
- 239000012535 impurity Substances 0.000 abstract description 13
- 238000000151 deposition Methods 0.000 abstract 2
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 abstract 1
- 239000000969 carrier Substances 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000005380 borophosphosilicate glass Substances 0.000 description 4
- 238000011049 filling Methods 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000010992 reflux Methods 0.000 description 2
- 241000446313 Lamella Species 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys
- H01L29/165—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys in different semiconductor regions, e.g. heterojunctions
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Manufacturing & Machinery (AREA)
- Recrystallisation Techniques (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (13)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2010101410645A CN102214561A (zh) | 2010-04-06 | 2010-04-06 | 超级结半导体器件及其制造方法 |
US13/080,582 US20110241156A1 (en) | 2010-04-06 | 2011-04-05 | Semiconductor device and method for manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2010101410645A CN102214561A (zh) | 2010-04-06 | 2010-04-06 | 超级结半导体器件及其制造方法 |
Publications (1)
Publication Number | Publication Date |
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CN102214561A true CN102214561A (zh) | 2011-10-12 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN2010101410645A Pending CN102214561A (zh) | 2010-04-06 | 2010-04-06 | 超级结半导体器件及其制造方法 |
Country Status (2)
Country | Link |
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US (1) | US20110241156A1 (zh) |
CN (1) | CN102214561A (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103633137A (zh) * | 2012-08-21 | 2014-03-12 | 朱江 | 一种具有底部隔离电荷补偿结构半导体晶片及其制备方法 |
CN105321819A (zh) * | 2014-07-15 | 2016-02-10 | 富士电机株式会社 | 半导体装置的制造方法 |
CN105679809A (zh) * | 2016-01-15 | 2016-06-15 | 上海华虹宏力半导体制造有限公司 | 沟槽型超级结的制造方法 |
CN109817700A (zh) * | 2019-01-15 | 2019-05-28 | 上海华虹宏力半导体制造有限公司 | 超级结深沟槽填充方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030025154A1 (en) * | 2001-08-02 | 2003-02-06 | Haynie Sheldon D. | LDMOS high voltage structure compatible with VLSI CMOS processes |
CN1885557A (zh) * | 2005-06-21 | 2006-12-27 | 台湾积体电路制造股份有限公司 | 半导体元件及形成半导体元件的方法 |
CN101060132A (zh) * | 2006-04-19 | 2007-10-24 | 丰田自动车株式会社 | 半导体器件及其制造方法 |
CN101308875A (zh) * | 2007-05-14 | 2008-11-19 | 株式会社电装 | 具有超结结构的半导体器件及其制造方法 |
CN101506940A (zh) * | 2006-08-25 | 2009-08-12 | 飞思卡尔半导体公司 | 超结沟槽器件及方法 |
CN101640171A (zh) * | 2008-08-01 | 2010-02-03 | 富士电机电子技术株式会社 | 半导体器件制造方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7507631B2 (en) * | 2006-07-06 | 2009-03-24 | International Business Machines Corporation | Epitaxial filled deep trench structures |
US8187955B2 (en) * | 2009-08-24 | 2012-05-29 | International Business Machines Corporation | Graphene growth on a carbon-containing semiconductor layer |
-
2010
- 2010-04-06 CN CN2010101410645A patent/CN102214561A/zh active Pending
-
2011
- 2011-04-05 US US13/080,582 patent/US20110241156A1/en not_active Abandoned
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030025154A1 (en) * | 2001-08-02 | 2003-02-06 | Haynie Sheldon D. | LDMOS high voltage structure compatible with VLSI CMOS processes |
CN1885557A (zh) * | 2005-06-21 | 2006-12-27 | 台湾积体电路制造股份有限公司 | 半导体元件及形成半导体元件的方法 |
CN101060132A (zh) * | 2006-04-19 | 2007-10-24 | 丰田自动车株式会社 | 半导体器件及其制造方法 |
CN101506940A (zh) * | 2006-08-25 | 2009-08-12 | 飞思卡尔半导体公司 | 超结沟槽器件及方法 |
CN101308875A (zh) * | 2007-05-14 | 2008-11-19 | 株式会社电装 | 具有超结结构的半导体器件及其制造方法 |
CN101640171A (zh) * | 2008-08-01 | 2010-02-03 | 富士电机电子技术株式会社 | 半导体器件制造方法 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103633137A (zh) * | 2012-08-21 | 2014-03-12 | 朱江 | 一种具有底部隔离电荷补偿结构半导体晶片及其制备方法 |
CN105321819A (zh) * | 2014-07-15 | 2016-02-10 | 富士电机株式会社 | 半导体装置的制造方法 |
CN105321819B (zh) * | 2014-07-15 | 2019-07-26 | 富士电机株式会社 | 半导体装置的制造方法 |
CN105679809A (zh) * | 2016-01-15 | 2016-06-15 | 上海华虹宏力半导体制造有限公司 | 沟槽型超级结的制造方法 |
CN109817700A (zh) * | 2019-01-15 | 2019-05-28 | 上海华虹宏力半导体制造有限公司 | 超级结深沟槽填充方法 |
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Publication number | Publication date |
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US20110241156A1 (en) | 2011-10-06 |
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