CN102210017B - 含有微定位系统的快速热处理腔室 - Google Patents

含有微定位系统的快速热处理腔室 Download PDF

Info

Publication number
CN102210017B
CN102210017B CN2009801444721A CN200980144472A CN102210017B CN 102210017 B CN102210017 B CN 102210017B CN 2009801444721 A CN2009801444721 A CN 2009801444721A CN 200980144472 A CN200980144472 A CN 200980144472A CN 102210017 B CN102210017 B CN 102210017B
Authority
CN
China
Prior art keywords
substrate
substrate support
support
chamber
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN2009801444721A
Other languages
English (en)
Chinese (zh)
Other versions
CN102210017A (zh
Inventor
库赫斯特·索瑞伯基
约瑟夫·M·拉内什
沃尔夫冈·阿德霍尔德
阿伦·M·亨特
布莱克·R·凯尔梅尔
亚历山大·N·勒纳
尼尔·梅里
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN102210017A publication Critical patent/CN102210017A/zh
Application granted granted Critical
Publication of CN102210017B publication Critical patent/CN102210017B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0606—Position monitoring, e.g. misposition detection or presence detection
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
    • H10P72/53—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment using optical controlling means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
CN2009801444721A 2008-11-06 2009-11-05 含有微定位系统的快速热处理腔室 Active CN102210017B (zh)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US11200808P 2008-11-06 2008-11-06
US11201508P 2008-11-06 2008-11-06
US61/112,015 2008-11-06
US61/112,008 2008-11-06
US12/611,958 2009-11-04
US12/611,958 US8314371B2 (en) 2008-11-06 2009-11-04 Rapid thermal processing chamber with micro-positioning system
PCT/US2009/063394 WO2010054076A2 (en) 2008-11-06 2009-11-05 Rapid thermal processing chamber with micro-positioning system

Publications (2)

Publication Number Publication Date
CN102210017A CN102210017A (zh) 2011-10-05
CN102210017B true CN102210017B (zh) 2013-09-11

Family

ID=42153545

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2009801444721A Active CN102210017B (zh) 2008-11-06 2009-11-05 含有微定位系统的快速热处理腔室

Country Status (6)

Country Link
US (4) US8314371B2 (https=)
JP (1) JP6079980B2 (https=)
KR (3) KR101613527B1 (https=)
CN (1) CN102210017B (https=)
DE (1) DE112009002691T5 (https=)
WO (1) WO2010054076A2 (https=)

Families Citing this family (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8314371B2 (en) * 2008-11-06 2012-11-20 Applied Materials, Inc. Rapid thermal processing chamber with micro-positioning system
US8109669B2 (en) * 2008-11-19 2012-02-07 Applied Materials, Inc. Temperature uniformity measurement during thermal processing
US9282592B2 (en) * 2009-02-27 2016-03-08 Taiwan Semiconductor Manufacturing Company, Ltd. Rotatable heating-cooling plate and element in proximity thereto
DE102011007682A1 (de) * 2011-04-19 2012-10-25 Siltronic Ag Suszeptor zum Abstützen einer Halbleiterscheibe und Verfahren zum Abscheiden einer Schicht auf einer Vorderseite einer Halbleiterscheibe
CN105742201B (zh) * 2011-08-16 2018-07-27 应用材料公司 用于在腔室内感测基板的方法及设备
JP5676398B2 (ja) * 2011-08-29 2015-02-25 株式会社Ｓｅｂａｃｓ 基板温度測定システム
US9548223B2 (en) * 2011-12-23 2017-01-17 Lam Research Ag Apparatus for treating surfaces of wafer-shaped articles
KR101829676B1 (ko) * 2011-12-29 2018-02-20 삼성전자주식회사 웨이퍼 열 처리 방법
US9330949B2 (en) * 2012-03-27 2016-05-03 SCREEN Holdings Co., Ltd. Heat treatment apparatus for heating substrate by irradiating substrate with flash of light
US9960059B2 (en) * 2012-03-30 2018-05-01 Taiwan Semiconductor Manufacturing Company, Ltd. Honeycomb heaters for integrated circuit manufacturing
KR101418555B1 (ko) * 2012-08-06 2014-07-15 인하대학교 산학협력단 가스부양장치용 챔버
CN104718608A (zh) * 2012-11-21 2015-06-17 Ev集团公司 用于容纳及安装晶片的容纳装置
CN105190850A (zh) * 2013-05-15 2015-12-23 应用材料公司 用于灯加热组件的扩散器
JP6114668B2 (ja) * 2013-09-18 2017-04-12 東京エレクトロン株式会社 基板処理装置及び基板処理方法
CN104655880A (zh) * 2013-11-19 2015-05-27 鸿富锦精密电子(天津)有限公司 测试转台
WO2017066418A1 (en) * 2015-10-15 2017-04-20 Applied Materials, Inc. Substrate carrier system
JP2017184198A (ja) * 2016-03-31 2017-10-05 ソニー株式会社 イメージセンサ、撮像装置、イメージセンサ特定方法、画像偽造防止方法および画像改変制限方法
US9960068B1 (en) 2016-12-02 2018-05-01 Lam Research Corporation Moment cancelling pad raising mechanism in wafer positioning pedestal for semiconductor processing
US10573549B2 (en) 2016-12-01 2020-02-25 Lam Research Corporation Pad raising mechanism in wafer positioning pedestal for semiconductor processing
US9892956B1 (en) 2016-10-12 2018-02-13 Lam Research Corporation Wafer positioning pedestal for semiconductor processing
JP7297664B2 (ja) * 2016-11-09 2023-06-26 ティーイーエル マニュファクチュアリング アンド エンジニアリング オブ アメリカ，インコーポレイテッド プロセスチャンバ中でマイクロエレクトロニクス基板を処理するための磁気的な浮上および回転するチャック
NL2017773B1 (en) * 2016-11-11 2018-05-24 Suss Microtec Lithography Gmbh Positioning device
TWI765936B (zh) 2016-11-29 2022-06-01 美商東京威力科創Ｆｓｉ股份有限公司 用以對處理腔室中之微電子基板進行處理的平移與旋轉夾頭
US10418270B2 (en) 2016-12-07 2019-09-17 Tel Fsi, Inc. Wafer edge lift pin design for manufacturing a semiconductor device
US9964863B1 (en) 2016-12-20 2018-05-08 Applied Materials, Inc. Post exposure processing apparatus
US10655224B2 (en) * 2016-12-20 2020-05-19 Lam Research Corporation Conical wafer centering and holding device for semiconductor processing
JP7177069B2 (ja) 2017-01-27 2022-11-22 ティーイーエル マニュファクチュアリング アンド エンジニアリング オブ アメリカ，インコーポレイテッド 基板をプロセスチャンバ内で回転及び並進するためのシステム及び方法
KR101948522B1 (ko) 2017-06-05 2019-04-29 홍승환 사이즈 조절이 가능한 웨이퍼용 매거진
JP6948860B2 (ja) * 2017-07-14 2021-10-13 株式会社荏原製作所 基板保持装置
CN109686677A (zh) * 2017-10-19 2019-04-26 德淮半导体有限公司 一种半导体加工设备
JP2019079867A (ja) * 2017-10-20 2019-05-23 漢民科技股▲分▼有限公司 気相成膜装置
JP7357625B2 (ja) 2018-02-19 2023-10-06 ティーイーエル マニュファクチュアリング アンド エンジニアリング オブ アメリカ，インコーポレイテッド 制御可能なビームサイズの処理噴霧を有する小型電子機器処理システム
CN111819679A (zh) * 2018-03-13 2020-10-23 应用材料公司 具有等离子体喷涂涂层的支撑环
KR102433436B1 (ko) 2018-07-04 2022-08-17 삼성전자주식회사 기판 처리 시스템, 기판 처리 시스템에서의 에지 링 정렬 검사 방법 및 이를 수행하기 위한 원반형 비젼 센서
US11545387B2 (en) * 2018-07-13 2023-01-03 Tel Manufacturing And Engineering Of America, Inc. Magnetic integrated lift pin system for a chemical processing chamber
US10802475B2 (en) * 2018-07-16 2020-10-13 Elite Robotics Positioner for a robotic workcell
TWI805795B (zh) 2018-07-20 2023-06-21 美商應用材料股份有限公司 基板定位設備與方法
TWI794530B (zh) 2018-07-20 2023-03-01 美商應用材料股份有限公司 基板定位設備及方法
US10876976B2 (en) * 2018-08-30 2020-12-29 Taiwan Semiconductor Manufacturing Company Ltd. Apparatus and method for substrate inspection
US11404296B2 (en) 2018-09-04 2022-08-02 Applied Materials, Inc. Method and apparatus for measuring placement of a substrate on a heater pedestal
CN113412534A (zh) * 2019-02-08 2021-09-17 朗姆研究公司 衬底位置检测和调整
KR102640172B1 (ko) 2019-07-03 2024-02-23 삼성전자주식회사 기판 처리 장치 및 이의 구동 방법
US11342209B2 (en) 2019-12-09 2022-05-24 Applied Materials, Inc. Methods and apparatus for measuring edge ring temperature
KR102888626B1 (ko) * 2020-01-23 2025-11-19 램 리써치 코포레이션 자동화된 회전 사전 정렬을 사용한 에지 링 이송
JP7418241B2 (ja) * 2020-02-27 2024-01-19 東京エレクトロン株式会社 位置決め装置、処理システム及び位置決め方法
US11915953B2 (en) * 2020-04-17 2024-02-27 Applied Materials, Inc. Apparatus, systems, and methods of measuring edge ring distance for thermal processing chambers
KR102417426B1 (ko) * 2020-07-09 2022-07-06 주식회사 한화 보호부를 구비한 기판 처리 장치
KR20230052877A (ko) * 2020-08-17 2023-04-20 도쿄엘렉트론가부시키가이샤 반도체 제조를 위해 절대 참조물을 통해 오버레이 결과물을 제조하기 위한 방법
CN115165109A (zh) * 2021-03-18 2022-10-11 Asm Ip私人控股有限公司 具有灯排对准的晶片远边缘温度测量系统
KR20220130609A (ko) 2021-03-18 2022-09-27 에이에스엠 아이피 홀딩 비.브이. 막 증착 동안 기판 온도를 제어하기 위한 이중 고온계 시스템
US11721566B2 (en) * 2021-07-13 2023-08-08 Applied Materials, Inc. Sensor assembly and methods of vapor monitoring in process chambers
JP7641878B2 (ja) * 2021-11-01 2025-03-07 東京エレクトロン株式会社 測定方法及び測定システム
KR102742224B1 (ko) * 2021-12-16 2024-12-12 에이피시스템 주식회사 자기부상 회전 장치 및 이를 이용하는 기판 처리 장치
US11649855B1 (en) * 2022-04-28 2023-05-16 Skf Canada Limited Contaminant-free work piece processing system
US20240153800A1 (en) 2022-11-07 2024-05-09 Applied Materials, Inc. Semiconductor process equipment
US12273051B2 (en) 2022-12-14 2025-04-08 Applied Materials, Inc. Apparatus and method for contactless transportation of a carrier
US12548743B2 (en) 2023-09-01 2026-02-10 Applied Materials, Inc. Passive lift pin assembly
USD1122216S1 (en) 2023-10-02 2026-04-14 Applied Materials, Inc. Substrate carrier
USD1118552S1 (en) 2023-10-24 2026-03-17 Applied Materials, Inc. Substrate carrier

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5982986A (en) * 1995-02-03 1999-11-09 Applied Materials, Inc. Apparatus and method for rotationally aligning and degassing semiconductor substrate within single vacuum chamber
CN1529900A (zh) * 2001-05-11 2004-09-15 Ӧ�ò��Ϲ�˾ 包括热分布板和边缘支撑的组合装置

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08510240A (ja) 1993-05-12 1996-10-29 カイロン コーポレイション Ｃ型肝炎ウイルスｅ２／ｎｓ１領域の保存モチーフ
JP2908227B2 (ja) * 1993-12-29 1999-06-21 日本電気株式会社 半導体製造装置
US5563798A (en) * 1994-04-05 1996-10-08 Applied Materials, Inc. Wafer positioning system
TW350115B (en) 1996-12-02 1999-01-11 Toyota Automatic Loom Co Ltd Misregistration detection device and method thereof
JPH10223732A (ja) * 1996-12-02 1998-08-21 Toyota Autom Loom Works Ltd 位置ずれ検出装置およびその方法
US5955858A (en) 1997-02-14 1999-09-21 Applied Materials, Inc. Mechanically clamping robot wrist
US6722834B1 (en) 1997-10-08 2004-04-20 Applied Materials, Inc. Robot blade with dual offset wafer supports
KR20010111058A (ko) * 2000-06-09 2001-12-15 조셉 제이. 스위니 전체 영역 온도 제어 정전기 척 및 그 제조방법
US8313371B1 (en) * 2000-12-20 2012-11-20 Bally Gaming, Inc. Method and apparatus for awarding component prizes in a gaming environment
US7065892B2 (en) * 2001-03-19 2006-06-27 Veeco Instruments Inc. Method and apparatus for calibrating a vision system to a parts handling device
KR20030044302A (ko) 2001-11-29 2003-06-09 삼성전자주식회사 웨이퍼 정렬 장치를 갖는 반도체 웨이퍼 베이크 장치
JP4353454B2 (ja) * 2002-06-21 2009-10-28 大日本スクリーン製造株式会社 熱処理装置
US6800833B2 (en) 2002-03-29 2004-10-05 Mariusch Gregor Electromagnetically levitated substrate support
US7153185B1 (en) 2003-08-18 2006-12-26 Applied Materials, Inc. Substrate edge detection
US7107125B2 (en) * 2003-10-29 2006-09-12 Applied Materials, Inc. Method and apparatus for monitoring the position of a semiconductor processing robot
US20050160992A1 (en) * 2004-01-28 2005-07-28 Applied Materials, Inc. Substrate gripping apparatus
US8658945B2 (en) 2004-02-27 2014-02-25 Applied Materials, Inc. Backside rapid thermal processing of patterned wafers
US20050223993A1 (en) * 2004-04-08 2005-10-13 Blomiley Eric R Deposition apparatuses; methods for assessing alignments of substrates within deposition apparatuses; and methods for assessing thicknesses of deposited layers within deposition apparatuses
US20070215049A1 (en) 2006-03-14 2007-09-20 Applied Materials, Inc. Transfer of wafers with edge grip
KR20080034725A (ko) * 2006-10-17 2008-04-22 삼성전자주식회사 로드락 챔버 및 로드락 챔버에서의 웨이퍼의 로딩, 언로딩방법
US7378618B1 (en) 2006-12-14 2008-05-27 Applied Materials, Inc. Rapid conductive cooling using a secondary process plane
JP2008188727A (ja) * 2007-02-06 2008-08-21 Joyo Kogaku Kk アライメント方法およびその装置
US8057602B2 (en) * 2007-05-09 2011-11-15 Applied Materials, Inc. Apparatus and method for supporting, positioning and rotating a substrate in a processing chamber
US20090298300A1 (en) * 2008-05-09 2009-12-03 Applied Materials, Inc. Apparatus and Methods for Hyperbaric Rapid Thermal Processing
US8111978B2 (en) * 2008-07-11 2012-02-07 Applied Materials, Inc. Rapid thermal processing chamber with shower head
WO2010009050A2 (en) * 2008-07-15 2010-01-21 Applied Materials, Inc. Substrate lift pin sensor
US8314371B2 (en) * 2008-11-06 2012-11-20 Applied Materials, Inc. Rapid thermal processing chamber with micro-positioning system
US8461022B2 (en) * 2009-04-20 2013-06-11 Applied Materials, Inc. Methods and apparatus for aligning a substrate in a process chamber

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5982986A (en) * 1995-02-03 1999-11-09 Applied Materials, Inc. Apparatus and method for rotationally aligning and degassing semiconductor substrate within single vacuum chamber
CN1529900A (zh) * 2001-05-11 2004-09-15 Ӧ�ò��Ϲ�˾ 包括热分布板和边缘支撑的组合装置

Also Published As

Publication number Publication date
WO2010054076A3 (en) 2010-07-29
JP2012508456A (ja) 2012-04-05
US20130043632A1 (en) 2013-02-21
US20150050118A1 (en) 2015-02-19
KR101831360B1 (ko) 2018-02-22
CN102210017A (zh) 2011-10-05
US9390950B2 (en) 2016-07-12
US9564349B2 (en) 2017-02-07
US8900889B2 (en) 2014-12-02
KR20180021220A (ko) 2018-02-28
WO2010054076A2 (en) 2010-05-14
US20100133257A1 (en) 2010-06-03
US8314371B2 (en) 2012-11-20
KR101613527B1 (ko) 2016-04-19
KR101958823B1 (ko) 2019-03-15
KR20110084524A (ko) 2011-07-25
KR20160030329A (ko) 2016-03-16
US20130043235A1 (en) 2013-02-21
DE112009002691T5 (de) 2012-07-26
JP6079980B2 (ja) 2017-02-15

Similar Documents

Publication Publication Date Title
CN102210017B (zh) 含有微定位系统的快速热处理腔室
TWI407511B (zh) 使用次要處理工廠進行快速傳導冷卻的方法與設備
US8111978B2 (en) Rapid thermal processing chamber with shower head
TWI515796B (zh) 於快速熱處理腔室中瞬間退火滯留時間之減少
US8461022B2 (en) Methods and apparatus for aligning a substrate in a process chamber
TW201724320A (zh) 用於epi製程之晶圓加熱的二極體雷射
TWI421945B (zh) 含有微定位系統之快速熱處理腔室與處理基材之方法
TW201822312A (zh) 用於燈泡加熱組件的散光器
TW201501207A (zh) 用於熱腔室應用及製程的光管窗口結構

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C53 Correction of patent of invention or patent application
CB02 Change of applicant information

Address after: American California

Applicant after: Applied Materials Inc.

Address before: American California

Applicant before: Applied Materials Inc.

C14 Grant of patent or utility model
GR01 Patent grant